CN105551913A - Preparation method of streak image converter - Google Patents

Preparation method of streak image converter Download PDF

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Publication number
CN105551913A
CN105551913A CN201510941402.6A CN201510941402A CN105551913A CN 105551913 A CN105551913 A CN 105551913A CN 201510941402 A CN201510941402 A CN 201510941402A CN 105551913 A CN105551913 A CN 105551913A
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China
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indium
vacuum
shell
evaporation source
image converter
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Inventor
王兴
田进寿
白永林
赛小峰
段东平
卢裕
徐向宴
韦永林
雷鸣轩
张铁
董改云
王俊锋
温文龙
刘虎林
辛丽伟
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XiAn Institute of Optics and Precision Mechanics of CAS
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XiAn Institute of Optics and Precision Mechanics of CAS
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Priority to CN201510941402.6A priority Critical patent/CN105551913A/en
Publication of CN105551913A publication Critical patent/CN105551913A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/32Sealing leading-in conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/12Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

The invention relates to the technical field of photoelectric devices, in particular to a preparation method of a streak image converter. The preparation method of the streak image converter comprises the following steps: (1) preparing a component; (2) installing and adjusting the component; and (3) fabricating a cathode; and according to the improvement, the preparation method also comprises a step (4) of carrying out transferring and indium sealing. The streak image converter is fabricated by thermal indium sealing of a transfer system, so that pollution to other electrode components of the device caused by a cathode evaporation source in the fabrication process of a photoelectric cathode can be greatly avoided; noise is reduced; and the uniformity of the photoelectric cathode and the dynamic range of the streak image converter are improved. By a unique vacuum sealing structure, the vacuum sealing success rate of the device can be improved. The related method can also be applied to research and production of various vacuum photoelectric devices of a photomultiplier, an image intensifier, an enhanced image coupler and the like.

Description

A kind of preparation method of striped image converter tube
Technical field
The present invention relates to photoelectric device technical field, particularly relate to a kind of manufacture method of striped image converter tube.
Background technology
Striped image converter tube is a kind of have psec even high-end photoelectric device of femtosecond time resolution, micron order spatial resolving power, has a wide range of applications in science and technology field.Such as, to the measurement of ultrashort electron beam pulse duration in the large scientific facilities such as synchrotron radiation light source, electron-positron collider, the forming process of plasma and the diagnosis of characteristic in high-temperature high-density plasma research, to the fluorescence lifetime measurement etc. of cell in biomedicine.
Striped image converter tube is primarily of input, photocathode, accelerating grid electrode, focusing electrode, deflecting electrode, dynode and phosphor screen composition, and wherein photocathode is deposited on input entrance window inner surface.The operation principle of striped image converter tube is that the detection of a target irradiates entrance window and bombards photocathode layer, the photon of incidence is converted to electronics, the time behavior of incident light is converted into spatial variations characteristic by electronics after the processes such as acceleration, focusing, deflection, further across dynode realization to the amplification of electronic signal and by the detection of phosphor screen realization to signal.
The manufacturing process of striped image converter tube mainly comprises that assembly prepares, assembly is debug, negative electrode makes and four steps such as vacuum seal.Wherein assembly prepares the technical process such as processing, cleaning, sealing-in that comprises assembly; Assembly is debug mainly to comprise and is shelved according to designing requirement each assembly, carries out picture element detection to the parts shelved, and welds further and vacuum leak hunting the assembly meeting picture element requirement; It is the deposition of carrying out photocathode film on the entrance window of input that negative electrode makes; Finally carry out the making that vacuum seal completes whole striped image converter tube.
First striped image converter tube needed to carry out strict Electron optics design and structural design in theory before making, ensure that the striped image converter tube made has high time-space resolution ability, patent CN102064073B proposes a kind of structure of Larger Dynamic striped image converter tube, can realize being less than the time resolution of 1ps (psec) and the high-space resolution ability of 55lp/mm (to every millimeter, line).In the manufacture craft of striped image converter tube, patent CN103077873A proposes a kind of assembly method of striped image converter tube, can improve the positional precision of each assembly in assembling process.
Traditional striped image converter tube adopts non-diverting system to make, manufacturing process is after being debug by assembly, utilize the technique of laser welding by each assembly and entrance window welding formation entirety, striped image converter tube all component is all placed in shell inside, remains for the glass tube of vacuum exhaust and the glass tube for the evaporation of photocathode source at shell edge in advance.Then this shell is placed in non-diverting system, by glass tube, vacuum exhaust is carried out to shell inside, and carry out the evaporation of photocathode rete.After negative electrode completes, high-temperature heating makes glass tube melt the vacuum seal realizing striped image converter tube.The manufacture method major defect of this striped image converter tube is:
1) because all component is all a shell inside, in photocathode manufacturing process, unnecessary photoelectric cathode materials will be deposited on electrode assemblie, cause the pollution of other assemblies, contaminated electrode assemblie also can utilizing emitted light electronics under the effect of stray light, thus cause background noise to increase, reduce the important performance characteristic such as signal to noise ratio, dynamic range of striped image converter tube.
2) striped image converter tube needs the high pressure applying more than several kilovolts in the course of the work usually, if electrode assemblie is polluted, often occurs the phenomenon of high voltage arc, causes striped image converter tube cisco unity malfunction.
3) method of glass tube sealed off vacuum system is had very large uncertainty by employing, easily causes the gas leak phenomenon in seal process, makes the making failure of whole striped image converter tube, reduces the success rate that striped image converter tube makes, waste man power and material.
Summary of the invention
Make to solve above-mentioned striped image converter tube the shortcoming existed, the invention provides one can reduce noise, improves the success rate of dynamic range and making, can avoid the preparation method of spark phenomenon striped image converter tube under electrode high pressure simultaneously.
Technical scheme of the present invention is as follows:
The present invention proposes a kind of preparation method of striped image converter tube, comprise the following steps: 1) assembly prepare, 2) assembly debugs, 3) negative electrode makes, it is characterized in that: also comprise step 4) transfer indium envelope;
The concrete steps of described transfer indium envelope are:
4.1) indium is changed; The temperature of indium being sealed chamber is set between 120 ° to 130 °, after waiting temperature is stable, observes the melting state of indium stannum alloy in the indium seal ring of shell top in indium envelope chamber, treats that indium stannum alloy is liquid, then carry out step 4.2); Otherwise continue to wait for;
4.2) negative electrode transfer is sealed with indium; Input is transferred to indium envelope chamber by magnetic force transmission lever from negative electrode make-up room, observe the upper indium seal structure at input edge and the lower indium seal structure on shell top, after both guarantees alignment, input is slowly fallen, indium seal structure is immersed in be filled with the lower indium seal structure of indium stannum alloy inner, input is fixedly connected with shell;
4.3) start cooling to indium envelope chamber, indium stannum alloy solidifies, and striped image converter tube completes.
Above-mentioned steps 1) concrete steps be:
1.1) preparation of input; First by metal dish and the sealing-in of entrance window high frequency, input is formed; High annealing is carried out to input; Then degreaser, alcohol, deionized water ultrasonic cleaning are carried out successively to input; Finally vacuum leak hunting is carried out to input, ensure that vacuum leak rate is less than 10 -10pa/L.S;
1.2) preparation of shell and electrode assemblie; The high temperature anneal is carried out to electrode assemblie, indium seal ring and shell, then carries out degreaser, alcohol, deionized water ultrasonic cleaning successively respectively; Described electrode assemblie comprises accelerating grid electrode, focusing electrode, deflecting electrode, dynode and phosphor screen;
1.3) preparation of cathode assembly; Be prepared in advance alkali-metal evaporation source and metallic antimony evaporation source;
1.4) preparation of indium closure material; Degreaser, alcohol, deionized water ultrasonic cleaning are carried out successively to indium stannum alloy; Then indium stannum alloy is once melted under 600 DEG C of high temperature, form the shape consistent with indium seal ring; Finally again clean indium stannum alloy.
Above-mentioned steps 2) concrete steps be:
2.1) first, mold is utilized by electrode assemblie to carry out shelving and fixing, fixing employing AC spot-welding technique wherein between shell interior metal and metal, fix between glass shell and metal and adopt high frequency process for sealing with sealing, the connection between different shell adopts laser welding process;
2.2) a kind of metal photocathode is selected, utilize incident light to irradiate photocathode and produce photoelectron, photoelectron is imaging on phosphor screen under the effect of electrode assemblie, by microscope determination image whether at phosphor screen center, and picture element resolution and distortion are judged, the position through repeatedly finely tuning each electrode assemblie realizes shelving;
2.3) all electrode assemblies and shell are carried out welding and reinforcing again, and carry out vacuum leak hunting, ensure that in shell, vacuum leak rate is less than 10 -10pa/L.S;
2.4) indium stannum alloy is put into indium seal ring;
2.5) ac spot welding machine is utilized to be fixed on shell binding post by alkali-metal evaporation source and metallic antimony evaporation source, for applying electric current from vacuum chamber is outer to alkali-metal evaporation source and metallic antimony evaporation source.
Upper step 3) concrete steps are:
3.1) vacuum exhaust; The shell debug is put into the indium envelope chamber of vacuum transfer system, negative electrode input and alkali-metal evaporation source and metallic antimony evaporation source being put into transfer system makes chamber, three grades of vacuum pumping systems of mechanical pump, molecular pump and ionic pump are utilized to carry out vacuum exhaust, make all component be in high vacuum environment, vacuum degree is greater than 2 × 10 -6pa;
3.2) high-temperature baking; Carry out high-temperature baking to vacuum chamber, baking temperature is 350 DEG C, and baking time is more than 10 hours;
3.3) alkali-metal evaporation source degasification; Utilize current source target evaporation source slowly to apply electric current, the gas under the effect of current flow heats in evaporation source mixture is released;
3.4) current flow heats is adopted to make the technique of alkali metal reduction realize the deposition of multilayer cathode film; Concrete steps are:
3.4.1) temperature negative electrode being made chamber is set to 200 DEG C, after temperature stabilization, simultaneously growing metal antimony film and alkali metal potassium film, and observes the change of photoelectric current, and when photoelectric current reaches maximum, K film and Sb film reaction generate SbK completely 3rete;
3.4.2) growth of sodium film is carried out, and alternating growth metallic antimony film and alkali metal potassium film, observe the change of photoelectric current, when photoelectric current reaches maximum, show that defining chemical formula is Na 2the negative electrode of KSb;
3.4.3) carry out the growth of caesium film, and observe the change of photoelectric current, when photoelectric current is maximum, photocathode layer is formed, and now the chemical formula of photocathode layer is Na 2kSb (Cs).
Advantage of the present invention is:
1) the present invention adopts transfer cathode manufacturing method, negative electrode makes and vacuum seal is isolated in two different vacuum chambers, can greatly to avoid in photocathode manufacturing process cathode material to the pollution of other electrode assemblies, reduce the phenomenon that electrode is under high pressure struck sparks, reduce noise, improve dynamic range.
2) method of the present invention adopts unique indium seal structure can ensure the vacuum-packed rate of finished products of striped image converter tube, for the further industrialization of striped image converter tube lays the foundation.
3) method of the present invention can be used for photomultiplier, striped image converter tube, image intensifier, the research of the various vacuum photoelectric device of enhanced image sensor and production.
Accompanying drawing explanation
Fig. 1 is striped image converter tube structural representation;
Fig. 2 is preparation technology's flow chart;
Fig. 3 is the change of photoelectric current in photocathode manufacturing process;
Fig. 4 is the striped image converter tube photocathode spectral response sensitivity that the inventive method makes.
Embodiment
The present invention is described further by reference to the accompanying drawings for an example below using a kind of striped image converter tube as vacuum photo tube.
As shown in Figure 1, striped image converter tube is by input 1, and photocathode 2, accelerating grid electrode 3, focusing electrode 4, deflecting electrode 5, dynode 6, phosphor screen 7, shell 8 forms.
Concrete Making programme is as shown in Figure 2:
1) assembly prepares
1.1) preparation of input 1: first by metal dish 9 and the sealing-in of entrance window 10 high frequency, forms input; Then high annealing is carried out to input; Again degreaser, alcohol, deionized water ultrasonic cleaning are carried out successively to input; Finally vacuum leak hunting is carried out to input, ensure that vacuum leak rate is less than 10 -10pa/L.S;
Wherein, the material of entrance window 10 is the Pyrex of better heat stability, diameter 17mm, and the material of metal dish is for cutting down, and the thermal coefficient of expansion of itself and glass is close.Also need after high frequency sealing-in completes to anneal further to input, eliminate stress between the two, to ensure the stability of input in subsequent technique and reliability.
To the input 1 surface finish polishing processed, and carry out degreaser, alcohol and deionized water ultrasonic cleaning successively.This step can get rid of the oxide layer can cutting down panel surface, washes the greasy dirt of glazing surface, obtains the cathode substrate of high cleanliness high roughness.
1.2) preparation of shell 8 and electrode assemblie: the high temperature anneal is carried out to accelerating grid electrode 3, focusing electrode 4, deflecting electrode 5, indium seal ring 11, shell 8, then carries out degreaser, alcohol, deionized water ultrasonic cleaning successively respectively.
The preparation of 1.3 cathode assemblies: be prepared in advance alkali-metal evaporation source and metallic antimony evaporation source.
The preparation of 1.4 indium closure materials: first degreaser, alcohol, deionized water ultrasonic cleaning are carried out successively to indium stannum alloy; Then indium stannum alloy is once melted (change indium) under 600 DEG C of high temperature, form the shape consistent with indium seal ring; Finally again clean indium stannum alloy.
2) assembly is debug
2.1) suitable mold is utilized to shelve and fix each electrode assemblie according to designing requirement, fixing employing AC spot-welding technique wherein between shell interior metal and metal, fix between glass shell and metal and adopt high frequency process for sealing with sealing, the connection between different shell adopts laser welding process.
2.2) in order to ensure the final image quality of striped image converter tube, image quality measurement simulated experiment need be carried out in electron optics assembly system.Concrete grammar is the metal photocathode that selection one property stable in the air is good, utilize incident light to irradiate photocathode and produce photoelectron, photoelectron imaging on phosphor screen under the effects such as acceleration, focusing, deflection, by microscope determination image whether at phosphor screen center, and picture element resolution and distortion are judged, the position through repeatedly finely tuning each assembly realizes high-precision shelving.
2.3) last, all electrode assemblies and shell are carried out welding and reinforcing again, and carries out vacuum leak hunting, ensure that in shell, vacuum leak rate is less than 10 -10pa/L.S.
2.4) indium stannum alloy is put into indium seal ring.
2.5) ac spot welding machine is utilized alkali-metal evaporation source and metallic antimony evaporation source to be fixed on the binding post of vacuum flange, to apply electric current to these cathode vaporation sources from vacuum chamber.
3) negative electrode makes
Striped image converter tube is mainly used in visible light wave range, and the photocathode 2 therefore made is generally the multialkali photocathode to visible ray sensitivity, and chemical composition is antimony, potassium, sodium, caesium.Concrete technology step is:
3.1) vacuum exhaust; The shell debug is put into the indium envelope chamber of vacuum transfer system, negative electrode input and cathode vaporation source being put into transfer system makes chamber, three grades of vacuum pumping systems of mechanical pump, molecular pump and ionic pump are utilized to carry out vacuum exhaust, make all component be in high vacuum environment, require that vacuum degree is better than 2 × 10 -6pa.
3.2) high-temperature baking; High-temperature baking is carried out to vacuum chamber, removes in vacuum chamber further and the residual gas of each assembly.Baking temperature is 350 DEG C, and baking time is more than 10 hours.After overbaking, vacuum degree in vacuum chamber will improve further, and after temperature is down to room temperature, General Proper reciprocal of duty cycle is better than 5 × 10 -7below Pa.
3.3) alkali-metal evaporation source degasification; Except metallic antimony, other cathode vaporation sources are the mixture that alkali metal compound and strong reductant form, the gas that a large amount of target is harmful can be discharged in cathode vaporation process, therefore need to carry out pre-degasification to these mixtures, reduce the release of pernicious gas as far as possible.Concrete grammar is: utilize current source target evaporation source slowly to apply electric current, the gas under the effect of current flow heats in evaporation source mixture is released, and maximum heat current is slightly smaller than electric current when alkali metal is reduced out.After this process completes, the vacuum degree of whole vacuum chamber will improve further.When vacuum degree is better than 1 × 10 -7during below Pa, carry out the deposition of photocathode layer.
3.4) type of photocathode is multialkali photocathode, adopts current flow heats to make the technique of alkali metal reduction realize the deposition of multilayer cathode film.Concrete steps are:
3.4.1) temperature negative electrode being made chamber is set to 200 DEG C, after temperature stabilization, growing metal antimony (Sb) film and alkali metal potassium (K) film simultaneously, and observe the change of photoelectric current, when photoelectric current reaches maximum, show that K film and Sb film reaction generate SbK completely 3rete;
3.4.2) carry out the growth of sodium (Na) film, and alternating growth K film will with Sb film, observe the change of photoelectric current, when photoelectric current reaches maximum, show to define good cathode construction, now the chemical formula of negative electrode is Na 2kSb;
3.4.3) carry out the growth of caesium (Cs) film, and observe the change of photoelectric current, show to define the photocathode with higher amount sub-efficiency when photoelectric current is maximum, now the chemical formula of negative electrode is Na 2kSb (Cs);
4) indium envelope is shifted
4.1) change indium.The temperature of indium being sealed chamber is set between 120 DEG C to 130 DEG C, after waiting temperature is stable, observe the melting state of indium stannum alloy in the indium seal ring of shell top in indium envelope chamber, fusing point due to indium stannum alloy is 118 DEG C, therefore it is liquid for can be observed now indium stannum alloy, can carry out negative electrode transfer and sealing.
4.2) negative electrode transfer is sealed with indium.Input is transferred to indium envelope chamber by magnetic force transmission lever from negative electrode make-up room, examines the upper indium seal structure at input edge and the lower indium seal structure on shell top, after both guarantees alignment, input is slowly fallen; Input is provided with indium seal structure, is easy to immerse indium stannum alloy inner, is connected by cathode window with body.
4.3), after cooling, indium stannum alloy solidifies, and is taken out by homogeneous tube from vacuum chamber, and striped image converter tube completes.
Wherein, shell 8 is made up of more piece glass tube, glass tube both sides with high frequency sealing-in with can cut down ring and be connected, this can cut down the contact conductor interface that ring edge can be used as internal electrode.
Wherein, one end of shell 8 is provided with indium seal structure 11, and indium seal structure 11 comprises indium seal structure 12 and lower indium seal structure 13, and upper indium seal structure 12 and lower indium seal structure 13 size, shape are suitable.
Indium seal structure is built with indium closure material 14, and indium closure material 14 elects indium stannum alloy as, and its fusing point is 117 DEG C, and the indium stannum alloy cleaned up at high temperature melts, and because it has good mobility, can be uniformly distributed in indium sealing groove.Generally after change indium terminates, indium stannum alloy fills up indium sealing groove 2/3 and is advisable, and indium tin stream in follow-up seal process can be caused too much to go out to cause interelectrode short circuit in shell.
The assembling of negative electrode alkali source and antimony ball.Photocathode 2 in this example is multialkali photocathode, and alkali source adopts high-purity alkali source of SASE, and be the mixture of chromate and strong reductant (zirconium aluminium powder, silicon etc.), under heating state, reducing agent can by the alkali metal reduction in chromate.The purity of antimony ball is greater than 99.99%, and diameter is about 0.5mm; All evapn source is all fixed in ring flange to be surveyed and is connected to outside by lead-in wire.
As shown in Figure 3, in cathode-making process manufacturing process photoelectric current with making the change curve of duration.This figure describes in negative electrode manufacturing process, first evaporates Sb and K, occurs photoelectric current, show to generate the material that certain has opto-electronic conversion effect, but photoelectric current is very little, quantum efficiency very low (photoelectric current larger explanation quantum efficiency can be higher); Therefore continue the evaporation of Sb and K until photoelectric current is maximum, now generate a kind of SbK 3rete, completing this process probably needs two hours, and in this process, photoelectric current is increased to about 100nA from zero.In order to increase photoelectric current further, carry out the alternating growth of Na film and Sb and K again, until see that photoelectric current continues to increase to a new value, as transverse axis in Fig. 3 from two hours by six hours during this period of time, photoelectric current rises to 300nA from about 100nA, and this process defines Na2KSb rete.In order to again increase photoelectric current, then carrying out the growth of Cs film, arriving most until photoelectric current reaches, as last hour in Fig. 3, can see the growth along with Cs film, photoelectric current continues to increase to close to 600nA, show that the photocathode with the sub-efficiency of higher amount is formed, now the chemical formula of negative electrode is Na 2kSb (Cs).White light source is used in said process.
Fig. 3 makes the photocurrent variations situation monitored in striped image converter tube photocathode process in a vacuum, takes out and apply in reality after needing the bulb portion of striped image converter tube and input part to seal from vacuum.Whether successful in order to determine transfer indium envelope, the striped image converter tube of being honored as a queen through transfer indium is taken out from vacuum system, seal successfully if now shift indium, then the change of basis photoelectric current in figure 3, should can also see obvious photoelectric current by testing photoelectronic negative electrode after by striped image converter tube exposure air.
As shown in Figure 4, adopt this striped image converter tube of test of light source that wavelength is adjustable from 400nm to 800nm, can see the variation characteristic of radiant sensitivity along with wavelength, this is typical Na 2kSb (Cs) photocathode spectral response curve, transfer indium striped image converter tube inside of being honored as a queen has good vacuum degree, and photocathode is working properly, proves that striped image converter tube is successful.

Claims (4)

1. a preparation method for striped image converter tube, comprises the following steps: 1) assembly prepare, 2) assembly debugs, 3) negative electrode makes, it is characterized in that: also comprise step 4) transfer indium envelope;
The concrete steps of described transfer indium envelope are:
4.1) indium is changed; The temperature of indium being sealed chamber is set between 120 ° to 130 °, after waiting temperature is stable, observes the melting state of indium stannum alloy in the indium seal ring of shell top in indium envelope chamber, treats that indium stannum alloy is liquid, then carry out step 4.2); Otherwise continue to wait for;
4.2) negative electrode transfer is sealed with indium; Input is transferred to indium envelope chamber by magnetic force transmission lever from negative electrode make-up room, observe the upper indium seal structure at input edge and the lower indium seal structure on shell top, after both guarantees alignment, input is slowly fallen, indium seal structure is immersed in be filled with the lower indium seal structure of indium stannum alloy inner, input is fixedly connected with shell;
4.3) start cooling to indium envelope chamber, indium stannum alloy solidifies, and striped image converter tube completes.
2. the preparation method of striped image converter tube according to claim 1, is characterized in that: described step 1) concrete steps be:
1.1) preparation of input; First by metal dish and the sealing-in of entrance window high frequency, input is formed; High annealing is carried out to input; Then degreaser, alcohol, deionized water ultrasonic cleaning are carried out successively to input; Finally vacuum leak hunting is carried out to input, ensure that vacuum leak rate is less than 10 -10pa/L.S;
1.2) preparation of shell and electrode assemblie; The high temperature anneal is carried out to electrode assemblie, indium seal ring and shell, then carries out degreaser, alcohol, deionized water ultrasonic cleaning successively respectively; Described electrode assemblie comprises accelerating grid electrode, focusing electrode, deflecting electrode, dynode and phosphor screen;
1.3) preparation of cathode assembly; Be prepared in advance alkali-metal evaporation source and metallic antimony evaporation source;
1.4) preparation of indium closure material; Degreaser, alcohol, deionized water ultrasonic cleaning are carried out successively to indium stannum alloy; Then indium stannum alloy is once melted under 600 DEG C of high temperature, form the shape consistent with indium seal ring; Finally again clean indium stannum alloy.
3. the preparation method of striped image converter tube according to claim 1 and 2, is characterized in that: described step 2) concrete steps be:
2.1) first, mold is utilized by electrode assemblie to carry out shelving and fixing, fixing employing AC spot-welding technique wherein between shell interior metal and metal, fix between glass shell and metal and adopt high frequency process for sealing with sealing, the connection between different shell adopts laser welding process;
2.2) a kind of metal photocathode is selected, utilize incident light to irradiate photocathode and produce photoelectron, photoelectron is imaging on phosphor screen under the effect of electrode assemblie, by microscope determination image whether at phosphor screen center, and picture element resolution and distortion are judged, the position through repeatedly finely tuning each electrode assemblie realizes shelving;
2.3) all electrode assemblies and shell are carried out welding and reinforcing again, and carry out vacuum leak hunting, ensure that in shell, vacuum leak rate is less than 10 -10pa/L.S;
2.4) indium stannum alloy is put into indium seal ring;
2.5) ac spot welding machine is utilized to be fixed on shell binding post by alkali-metal evaporation source and metallic antimony evaporation source, for applying electric current from vacuum chamber is outer to alkali-metal evaporation source and metallic antimony evaporation source.
4. the preparation method of striped image converter tube according to claim 3, is characterized in that: described step 3) concrete steps are:
3.1) vacuum exhaust; The shell debug is put into the indium envelope chamber of vacuum transfer system, negative electrode input and alkali-metal evaporation source and metallic antimony evaporation source being put into transfer system makes chamber, three grades of vacuum pumping systems of mechanical pump, molecular pump and ionic pump are utilized to carry out vacuum exhaust, make all component be in high vacuum environment, vacuum degree is greater than 2 × 10 -6pa;
3.2) high-temperature baking; Carry out high-temperature baking to vacuum chamber, baking temperature is 350 DEG C, and baking time is more than 10 hours;
3.3) alkali-metal evaporation source degasification; Utilize current source target evaporation source slowly to apply electric current, the gas under the effect of current flow heats in evaporation source mixture is released;
3.4) current flow heats is adopted to make the technique of alkali metal reduction realize the deposition of multilayer cathode film; Concrete steps are:
3.4.1) temperature negative electrode being made chamber is set to 200 DEG C, after temperature stabilization, simultaneously growing metal antimony film and alkali metal potassium film, and observes the change of photoelectric current, and when photoelectric current reaches maximum, K film and Sb film reaction generate SbK completely 3rete;
3.4.2) growth of sodium film is carried out, and alternating growth metallic antimony film and alkali metal potassium film, observe the change of photoelectric current, when photoelectric current reaches maximum, show that defining chemical formula is Na 2the negative electrode of KSb;
3.4.3) carry out the growth of caesium film, and observe the change of photoelectric current, when photoelectric current is maximum, photocathode layer is formed, and now the chemical formula of photocathode layer is Na 2kSb (Cs).
CN201510941402.6A 2015-12-15 2015-12-15 Preparation method of streak image converter Pending CN105551913A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449333A (en) * 2016-12-09 2017-02-22 北方夜视技术股份有限公司 Large-size indium seal disc sealing and connecting method based on cathode transfer equipment
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CN109585243A (en) * 2018-12-27 2019-04-05 中国科学院西安光学精密机械研究所 A kind of X-ray framing camera framing image-converter tube and method for sealing

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CN106449333A (en) * 2016-12-09 2017-02-22 北方夜视技术股份有限公司 Large-size indium seal disc sealing and connecting method based on cathode transfer equipment
CN107104028A (en) * 2017-04-28 2017-08-29 中国科学院西安光学精密机械研究所 A kind of assembling structure and method of anisotropy Larger Dynamic striped image converter tube
CN109585243A (en) * 2018-12-27 2019-04-05 中国科学院西安光学精密机械研究所 A kind of X-ray framing camera framing image-converter tube and method for sealing

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