CN106449333A - Large-size indium seal disc sealing and connecting method based on cathode transfer equipment - Google Patents
Large-size indium seal disc sealing and connecting method based on cathode transfer equipment Download PDFInfo
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- CN106449333A CN106449333A CN201611126855.4A CN201611126855A CN106449333A CN 106449333 A CN106449333 A CN 106449333A CN 201611126855 A CN201611126855 A CN 201611126855A CN 106449333 A CN106449333 A CN 106449333A
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- Prior art keywords
- disk
- indium
- cut down
- sealing
- transfer equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/26—Sealing together parts of vessels
- H01J9/263—Sealing together parts of vessels specially adapted for cathode-ray tubes
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- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
Abstract
The invention provides a large-size indium seal disc sealing and connecting method based on cathode transfer equipment. The method comprises the following steps of 1, reasonably designing upper Kovar disc and lower Kovar disc structures; 2, reasonably designing lower Kovar disc thickness; 3, performing film coating treatment on an upper Kovar disc; 4, reasonably designing indium wire size; 5, melting indium; 6, performing upper Kovar disc and lower Kovar disc sealing and connection on the basis of the cathode transfer equipment. The diameter of a 20-inch photomultiplier indium seal disc reaches 145mm; the diameter of an indium seal groove is 120mm; the method belongs to a large-size indium seal technology. After the method is used, the problems of infirm sealing and connection, sealing and connection gas leakage, micro leakage, slow leakage and the like of the large-size indium seal can be effectively solved; the flatness and the smoothness of the indium seal disc, an upper indium seal disc film coating technology, upper and lower indium seal disc butt joint precision and the like are improved; key performance parameters such as a photomultiplier cathode plateau curve, front and back pulse proportions and service life are improved.
Description
Technical field
The invention belongs to vacuum electronic field, particularly a kind of large scale indium closing disk sealing-in side based on negative electrode transfer equipment
Method.
Background technology
In ultrahigh vacuum transfer system, shell not only can be ensured not by alkali gold using transfer negative electrode indium encapsulation technique
Category pollution, and limit without cathode technique is taken into account.The air-tightness of indium envelope is extremely important, is the key issue of constraint device development
One of.Traditional cold indium encapsulation technique complex structure, high equipment cost, and by closure fit dimension required precision height.Hot indium
Encapsulation technique only needs first vacuum system to be warmed to eutectic solder melt temperature, then makes solder form good lubrication with sealing surface
So as to reach the purpose of sealing, relatively cool indium encapsulation technique is more simple and practical, and equipment manufacturing cost is low, therefore, prepares neck in photoelectric device
Domain has a wide range of applications.
20 microchannel template photomultiplier tubes are different from traditional dynode type photomultiplier tube, and its electron multiplier is adopted
The form that biplate microchannel plate (MCP) is superimposed, doubles to faint electronic signal, due to the intrinsic characteristic of microchannel plate, right
Alkali metal has stronger adsorptivity, and when cathode activation is carried out, microchannel plate is located at independent within the chamber, to prevent alkali metal
Microchannel plate surface is diffused to, after the completion of needing to wait for cathode activation, then microchannel plate is transferred to inside glass bulb.The difficulty of the technique
Point is to need for glass bulb and microchannel plate component to complete sealing-in inside vacuum chamber, and glass bulb and microchannel plate component composition are only
Vertical, vacuum-tight chamber.Studied by pre-stage test, we carry out indium using indium stannum alloy and seal sealing-in.
Indium envelope sealing-in be photomultiplier tube manufacture last one procedure, mainly by the glass bulb after the completion of cathode activation with
MCP component sealing-in, concrete grammar is will can to cut down disk under in the upper indium closing disk in glass bulb and MCP component using indium stannum alloy to be connected to
Together, seal is carried out, whether photomultiplier tube has plateau curve, is judge that indium seals whether qualified key index.Indium is sealed
Operation qualification rate directly affects photomultiplier tube tubulation qualification rate, and indium envelope will unsuccessfully cause homogeneous tube to make failure, and cause greatly
Waste；The slow leakage of indium envelope will affect photomultiplier transit tube lifetime, and hazardness is bigger.Indium envelope sealing-in directly affects the property of photomultiplier tube
Can parameter：(1) negative electrode plateau curve：Negative electrode plateau curve is related with vacuum, and experiment shows, photomultiplier tube internal vacuum is better than
During 1.0E-4Pa, negative electrode plateau curve is preferable, in order to ensure higher vacuum inside which, it is desirable to reduce during indium envelope, indium stannum alloy is put
Tolerance, meanwhile, after the completion of sealing-in, indium seals position gas leakage, also can affect internal vacuum during photomultiplier tube use.
(2) impulse ratio before and after：Forward and backward impulse ratio is related to photomultiplier tube vacuum, and vacuum is poor, forward and backward impulse ratio height.
(3) life-span：Photomultiplier transit tube lifetime needs to reach 25 years, and vacuum is the main cause for affecting the life-span, and indium envelope is affected in which
The one of the main reasons of portion's vacuum.Therefore, 20 photomultiplier tube indium seal technique are studied, is favorably improved photomultiplier tube whole
Body performance.
20 photomultiplier tube indium front covers are larger, and sealing surface diameter reaches 120mm, and sealing-in difficulty is very big, indium closing disk flat
Whole degree, fineness, upper indium closing disk coating process, upper and lower indium closing disk merging precision etc., the quality that can all affect indium to seal, cause indium to seal
Occur sealing-in loosely, sealing-in gas leakage, micro- leakage, slowly leak the problems such as.By the research to indium seal technique, 20 microchannel templates are improved
Photomultiplier tube indium seals operation qualification rate, reaches more than 95% by current 85% qualification rate, is manufactured into increasing photomultiplier tube
Product rate.
20 photomultiplier tube indium seal technique need to combine with 20 inches of photomultiplier tube manufacturing process, current by looking into
Prior art is read, not yet finds the technological standardss of such large scale indium closing disk sealing-in.
Content of the invention
The defect for existing for prior art or deficiency, it is contemplated that a kind of based on the big of negative electrode transfer equipment in proposing
Size indium closing disk method for sealing, can bring up to more than 95% by indium envelope operation qualification rate by current 85%, and indium stannum alloy is used
Within amount is reduced to 70g by current 75g, the vacancy of large scale indium closing disk indium encapsulation method is filled up.
The technical solution for realizing the object of the invention is：
A kind of large scale indium closing disk method for sealing based on negative electrode transfer equipment, comprises the following steps：
Step 1：Improve described upper can cut down disk and under can cut down dish structure, can cut down on expansion is described disk and under can cut down disk seal junction
Contact area, improves indium envelope reliability, seals qualification rate so as to improve indium.Disk seal contact surface can currently be cut down less, easily produce indium
Closing disk contact is bad, causes poor sealing performance, and we are finely adjusted to cutting down disk on the basis of current structure, under increase is described
Can cut down disk groove and described on can cut down disk projection size；
Step 2：Disc thickness 0.5mm-1.5mm can be cut down under described in appropriate design；
Step 3：Indium closing disk is to cut down material (4J29), poor with the matching of indium stannum alloy, could only in high temperature
Good with indium closing disk is in sealing contact, and in actual photomultiplier tube manufacture process, vacuum environment does not allow so high temperature, is
Realize sealing at a lower temperature, need to cut down, upper, the metal that disk is deposited with a layer and indium stannum alloy Lattice Matching, by
Disk lower surface can be cut down on described plates two kinds of metal films, the seal which can be good with indium stannum alloy, the first metal described
Film thickness is 100～1000nm, and second thickness of metal film is 100～1000nm；
Step 4：Indium closing disk, when indium stannum alloy is filled out, is many indium stannum alloy silks to be twisted into one fill out in indium sealing groove at present
In, easily there are the flaws such as bubble when indium is changed, by indium stannum alloy silk size is improved, reduce number of bubbles, improve indium stannum and close
Quality after gold fusing.Arrangement indium silk, indium silk 70～90g of weight in disk groove can be cut down under described.
Step 5：Local heating switch is opened, carries out pre-ization indium, fusion temperature control is between 400 DEG C～700 DEG C；
Step 6：Based on negative electrode transfer equipment carry out can cutting down on described disk and described under can cut down disk seal and connect.
Compared with prior art, its remarkable advantage is the present invention：Technical scheme is by designing new indium envelope
Dish structure, increases indium sealing-in contacting surface area, reduces indium front cover gap, improves indium envelope qualification rate, reduces indium envelope cost.The present invention can
20 microchannel template photomultiplier tube indium envelope operation qualification rates are improved, and more than 95% are reached by current 85% qualification rate, to increase
Plus photomultiplier tube fabrication yield, meet the supply of material and require；While reducing indium stannum alloy usage amount, reducing production cost, strengthening
The competitiveness of the product.
Below in conjunction with the accompanying drawings the present invention is described in further detail.
Description of the drawings
Fig. 1 for can above cut down disk and under can cut down disk docking schematic flow sheet.
Fig. 2 for can above cut down disk and under can cut down disk seal and connect rear schematic diagram.
Specific embodiment
The specific embodiment of the present invention is described more fully below.
Fig. 1 for can above cut down disk and under can cut down disk docking schematic flow sheet.
As shown in figure 1, the large scale indium closing disk method for sealing based on negative electrode transfer equipment, mainly described on can cut down disk
102 and the lower large area indium disk seal termination process for cutting down disk 104.The critical piece being related to includes glass bulb 101, can above cut down disk 102, indium
Silk 103 and under can cut down disk 104.
The glass bulb 101 of the present invention and can above cut down disk 102 for an entirety, in order to improve with described under can cut down disk 104
Sealing, described on can cut down the bottom of disk 102 and have a bulge-structure.
Two kinds of metal films that disk 102 is deposited with one layer and indium stannum alloy Lattice Matching can be cut down on described, itself and indium stannum alloy
Seal that can be good, the first thickness of metal film described is that 100nm～1000nm, second thickness of metal film is
100nm～1000nm.
Disk 104 can be cut down under described designs concave structure.
On can cut down disk 102 and lower cut down disk 104 male and fomale(M＆F) alignment.
On can to cut down disk 102 and the lower width for cutting down disk 104 be 120-180mm, can above cut down the width of the convex configuration of disk 102
Cut down, less than lower, the width that disk is configured to concave structure.
Disc thickness can be cut down under described for 0.5mm～1.5mm, can cut down in disk groove under described and arrange the indium silk 103, indium
Silk 70～90g of weight.Local heating switch is opened, carries out pre-ization indium, fusion temperature control is between 400 DEG C～700 DEG C.
In conjunction with shown in Fig. 1 and Fig. 2, the large scale indium closing disk method for sealing based on negative electrode transfer equipment proposed by the present invention,
Comprise the following steps：
Step 1：Improve described upper can cut down disk and under can cut down dish structure, can cut down on expansion is described disk and under can cut down disk seal junction
Contact area, improves indium envelope reliability, seals qualification rate so as to improve indium.Disk seal contact surface can currently be cut down less, easily produce indium
Closing disk contact is bad, causes poor sealing performance, and we are finely adjusted to cutting down disk on the basis of current structure, under increase is described
Can cut down disk groove and described on can cut down disk projection size；
Step 2：Disc thickness 0.5mm-1.5mm can be cut down under described in appropriate design；
Step 3：Indium closing disk is to cut down material (4J29), poor with the matching of indium stannum alloy, could only in high temperature
Good with indium closing disk is in sealing contact, and in actual photomultiplier tube manufacture process, vacuum environment does not allow so high temperature, is
Realize sealing at a lower temperature, need to cut down, upper, the metal that disk is deposited with a layer and indium stannum alloy Lattice Matching, by
Disk lower surface can be cut down on described plates two kinds of metal films, the seal which can be good with indium stannum alloy, the first metal described
Film thickness is 100～1000nm, and second thickness of metal film is 100～1000nm；
Step 4：Indium closing disk, when indium stannum alloy is filled out, is many indium stannum alloy silks to be twisted into one fill out in indium sealing groove at present
In, easily there are the flaws such as bubble when indium is changed, by indium stannum alloy silk size is improved, reduce number of bubbles, improve indium stannum and close
Quality after gold fusing.Arrangement indium silk, indium silk 70～90g of weight in disk groove can be cut down under described.
Step 5：Local heating switch is opened, carries out pre-ization indium, fusion temperature control is between 400 DEG C～700 DEG C；
Step 6：Based on negative electrode transfer equipment carry out can cutting down on described disk and described under can cut down disk seal and connect.
Wherein, carry out cutting down based on the negative electrode transfer equipment that negative electrode transfer equipment is especially three stations in step 6
Disk 102 and described under when can cut down 104 sealing-in of disk, for example, rise die assemblies, speed is 100mm/min, to be observed by observation window
Die assemblies, die assemblies rise, and enter 20 glass envelope components, can cut down on described disk 102 with described under can cut down disk 104 away from
From 20mm～25mm when, suspend die assemblies rising, the follow-up of continuing rising die assemblies of 30min, with described under can cut down 102 pairs, disk
Connect, described on can cut down disk 102 and under can cut down the concentric deviation of disk 104 less than 3cm, alignment precision is less demanding, and die assemblies are arrived
Reach upper limit to stop rising, MCP chamber local heating is closed, after 120min, close bell jar heating.
Be illustrated in figure 2 on described can cut down disk 102 and under can cut down structure chart after 104 sealing-in of disk.It is convex that disk 102 can be cut down on described
Rise part and under can cut down 104 groove part of disk and fit tightly, be finally completed the making of photomultiplier tube.
In sum, compared with prior art, its remarkable advantage is the present invention：Improve large scale indium closing disk process for sealing
Standard, improves 20 microchannel template photomultiplier tube indium envelope operation qualification rates, reaches more than 95% by current 85% qualification rate,
While reducing indium stannum alloy usage amount, reducing production cost, strengthening the competitiveness of the product.
Although the present invention is disclosed above with preferred embodiment, so which is not limited to the present invention.The affiliated skill of the present invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, protection scope of the present invention ought be defined depending on those as defined in claim.
Claims (9)
1. a kind of large scale indium closing disk method for sealing based on negative electrode transfer equipment, it is characterised in that comprise the following steps：
Step 1：Disk and the lower structure for cutting down disk can be cut down in design can cut down disk and the lower contact surface for cutting down disk seal junction on expanding
Product；
Step 2：Disc thickness can be cut down according to can above cut down under disk and the lower reasonable structure design for cutting down disk；
Step 3：Coating film treatment is carried out to can above cut down disk；
Step 4：Determine indium silk dimension and weight；
Step 5：Change indium；
Step 6：Based on negative electrode transfer equipment carry out cutting down disk and under can cut down disk seal and connect.
2. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 1, it is characterised in that front
State in step 1, described on can cut down disk and be configured to convex configuration, described under can cut down disk and be configured to concave structure, described on can
Cut down disk and the lower male and fomale(M＆F) alignment that can cut down disk.
3. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 1, it is characterised in that front
State in step 2, the lower thickness that can cut down disk is 0.5mm～1.5mm.
4. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 1, it is characterised in that front
State in step 3, described on can cut down disk through being deposited with two kinds of metal films, the first thickness of metal film described after over cleaning and annealing in hydrogen atmosphere and be
100nm～1000nm, second thickness of metal film is 100nm～1000nm, is deposited with temperature time 1.5h～3h.
5. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 1, it is characterised in that front
State in step 4, the indium silk weight 70g～90g, be positioned over down and can cut down in disk groove.
6. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 1, it is characterised in that front
State in step 5, during changing indium, be 400 DEG C～700 DEG C to the indium silk fusion temperature.
7. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 1, it is characterised in that front
State in step 6, will be described on can cut down disk and described under can cut down disk and carry out sealing-in, sealing-in in 170 DEG C～190 DEG C temperature ranges
Cheng Zhong, described on can cut down disk and the lower concentric deviation that can cut down disk less than 3cm.
8. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to any one in claim 1-7,
Characterized in that, it is 120-180mm, can above to cut down disk and be configured to convex configuration that can cut down disk and the lower width for cutting down disk on described
Width cuts down, less than lower, the width that disk is configured to concave structure.
9. the large scale indium closing disk method for sealing based on negative electrode transfer equipment according to claim 8, it is characterised in that institute
The width of the convex configuration that can cut down disk is stated substantially in 10-18mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611126855.4A CN106449333A (en) | 2016-12-09 | 2016-12-09 | Large-size indium seal disc sealing and connecting method based on cathode transfer equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611126855.4A CN106449333A (en) | 2016-12-09 | 2016-12-09 | Large-size indium seal disc sealing and connecting method based on cathode transfer equipment |
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| CN106449333A true CN106449333A (en) | 2017-02-22 |
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| CN201611126855.4A Pending CN106449333A (en) | 2016-12-09 | 2016-12-09 | Large-size indium seal disc sealing and connecting method based on cathode transfer equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706072A (en) * | 2017-08-25 | 2018-02-16 | 北方夜视技术股份有限公司 | The indium encapsulation method and prepared photomultiplier of photomultiplier based on negative electrode transfer equipment |
| CN111463090A (en) * | 2020-05-09 | 2020-07-28 | 北方夜视技术股份有限公司 | Device for accurately sealing large-size and small-diameter photomultiplier |
| CN111623801A (en) * | 2020-06-12 | 2020-09-04 | 湖南二零八先进科技有限公司 | Laser gyro electrode indium seal enhancement device and method |
| CN111721424A (en) * | 2019-03-20 | 2020-09-29 | 北京振兴计量测试研究所 | Method for mounting temperature sensor for infrared radiometer in vacuum low-temperature environment |
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| US4039877A (en) * | 1975-07-09 | 1977-08-02 | International Telephone And Telegraph Corporation | Image intensifier with fiber optic faceplates sealed with indium-bismuth alloy |
| CN103715034A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院西安光学精密机械研究所 | Photoelectric detection device transfer manufacturing system and method |
| CN105551913A (en) * | 2015-12-15 | 2016-05-04 | 中国科学院西安光学精密机械研究所 | Preparation method of streak image converter |
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| US4039877A (en) * | 1975-07-09 | 1977-08-02 | International Telephone And Telegraph Corporation | Image intensifier with fiber optic faceplates sealed with indium-bismuth alloy |
| CN103715034A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院西安光学精密机械研究所 | Photoelectric detection device transfer manufacturing system and method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107706072A (en) * | 2017-08-25 | 2018-02-16 | 北方夜视技术股份有限公司 | The indium encapsulation method and prepared photomultiplier of photomultiplier based on negative electrode transfer equipment |
| CN111721424A (en) * | 2019-03-20 | 2020-09-29 | 北京振兴计量测试研究所 | Method for mounting temperature sensor for infrared radiometer in vacuum low-temperature environment |
| CN111463090A (en) * | 2020-05-09 | 2020-07-28 | 北方夜视技术股份有限公司 | Device for accurately sealing large-size and small-diameter photomultiplier |
| CN111463090B (en) * | 2020-05-09 | 2022-07-08 | 北方夜视技术股份有限公司 | Device for accurately sealing large-size and small-diameter photomultiplier |
| CN111623801A (en) * | 2020-06-12 | 2020-09-04 | 湖南二零八先进科技有限公司 | Laser gyro electrode indium seal enhancement device and method |
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Application publication date: 20170222 |