CN105551520B - A kind of programmable circuit and its implementation based on Memristor/MOSFET - Google Patents

A kind of programmable circuit and its implementation based on Memristor/MOSFET Download PDF

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Publication number
CN105551520B
CN105551520B CN201610069637.5A CN201610069637A CN105551520B CN 105551520 B CN105551520 B CN 105551520B CN 201610069637 A CN201610069637 A CN 201610069637A CN 105551520 B CN105551520 B CN 105551520B
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memristor
nmos tube
control module
msub
mrow
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CN105551520A (en
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魏榕山
李睿
林汉超
张鑫刚
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Fuzhou University
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material

Abstract

The present invention relates to a kind of programmable circuit and its implementation based on Memristor/MOSFET.Pass through memristor（Memristor）It is used in combination with metal-oxide-semiconductor, program voltage is produced the stabling current for changing memristor resistance, play that memristor resistance is variable and non-volatile characteristic, reaches programmable effect.The present invention successfully realizes building for memristor model in SPICE softwares, proposes the programmable circuit based on memristor using the model, and carried out simulating, verifying for whole circuit.The programmable circuit that memristor and metal-oxide-semiconductor combine is simple in construction, and number of tubes is smaller, and integrated level is high, is advantageous to development of the integrated circuit further to Nano grade.

Description

A kind of programmable circuit and its implementation based on Memristor/MOSFET
Technical field
The present invention relates to programmable chip field, particularly a kind of programmable circuit based on Memristor/MOSFET and Its implementation.
Background technology
For programmable chip using quite varied in existing market, it passes through the mode engineers of software and hardware combining The circuit structure of chip internal can be changed by way of software programming, so as to realize regulation circuit output frequency, bandwidth, increasing The functions such as benefit.Traditional programmable chip mainly builds the circuit system of complexity using substantial amounts of MOSFET, passes through program voltage MOSFET switch is controlled so as to realizing the purpose of programming, such as MCU, CPLD, FPGA, DSP, MPU.Chip cost and chip face Product is closely bound up, and traditional programmable chip circuit is complicated, area is huge, and cost is very high, and design difficulty is big.With new micro- The appearance of electronic device, combining research and development high performance programmable circuit using new device and conventional MOS device turns into current microelectronics One important research direction of technology development.
The content of the invention
In view of this, the purpose of the present invention is to propose to a kind of programmable circuit based on Memristor/MOSFET and in fact Existing method, circuit structure is simple, is used in combination by memristor with metal-oxide-semiconductor, program voltage is produced and changes memristor resistance The stabling current of value, plays that memristor resistance is variable and non-volatile characteristic, reaches programmable effect.
The circuit of the present invention is realized using following scheme：A kind of programmable circuit based on Memristor/MOSFET, bag Include memristor resistance control module, memristor, circuit system；The memristor resistance control module include the first NMOS tube M1, Second NMOS tube M2, the 3rd NMOS tube M3, the 4th NMOS tube M4, grid and first NMOS tube of the first NMOS tube M1 The draining of M1, the grid of the second NMOS tube M2 is connected and is used as the first of the memristor resistance control module to program input Port, grid and the grid of the 4th NMOS tube M4, the drain electrode phase of the 4th NMOS tube M4 of the 3rd NMOS tube M3 Connect and be used as the second programming input mouth of the memristor resistance control module, the source electrode of the first NMOS tube M1 with it is described 3rd NMOS tube M3 connected and as the memristor resistance control module plus resistance output port that drains, described second NMOS tube M2 drain electrode is connected with the source electrode of the 4th NMOS tube M4 and is used as the drag reduction of the memristor resistance control module It is worth output port, the source electrode of the second NMOS tube M2 and the source grounding of the 3rd NMOS tube M3；The memristor resistance The the first programming input mouth and the second programming input mouth of value control module are accessing program voltage, the memristor resistance Control module adds resistance output port to be connected with both ends of the drag reduction value output port respectively with the memristor, the memristor Both ends be respectively connecting to two input ports of the circuit system.
Further, the first NMOS tube M1, the 4th NMOS tube M4 use diode connected mode.
The method of the present invention is realized using following scheme：Input program voltage is inputted into the memristor resistance control module The first programming input mouth and the second programming input mouth, control respectively the first NMOS tube M1, the second NMOS tube M2 and 3rd NMOS tube M3, the 4th NMOS tube M4 shut-off and the flow direction of electric current, the memristor is programmed using pulse, wherein Impulse amplitude, cycle and dutycycle adjust according to circuit system demand.
Further, the first NMOS tube M1 and the 4th NMOS tube M4 uses diode connected mode, to make First NMOS tube M1, the 4th NMOS tube M4 always work in saturation region, and its electric current does not change and changed with drain-source voltage, wherein electricity The calculating of flow valuve uses following formula：
Wherein, IDFor the drain current of NMOS tube, unFor electron transfer rate, CoxFor unit area oxide layer capacitance, W is Channel width, L be raceway groove length, VGSFor the voltage between NMOS tube grid source electrode, VTHFor the threshold voltage of NMOS tube.
Further, first programming input and the program voltage V of second programming input input1,V2There is provided The operating voltage of NMOS tube.
Memristor memory resistor and can be received much concern the advantages that Nano grade size with it as electronic device of new generation. Memristor have it is simple in construction, with the advantage such as cmos circuit compatibility is good, integration is high, power consumption is low, it is non-easily in high density The property lost memory, artificial intelligence, image procossing, logical operation, RFID, cloud computing, imictron cynapse, control system, letter Number processing etc. have huge application potential.The model of wherein memristor is as shown in Figure 1.
The resistance at memristor moment is current related with flowing through before, and internal structure shows as doped region and undoped region Ratio determine its current resistance.The position of doped region and undoped region border is represented with x, D represents the width of titanium oxide layer； RonWith RoffIn opening it is that oxide is all TiO for model2-nIt is that oxide is all TiO with off state2When resistance.Recall It is related with the electric current flowed through to the position x on undoped border to hinder device moment doped region, while x value determines resistance this moment Value, correlation formula are as follows：
X (t)=∫ ki (t) f (x) dt,F (x) is window function；
Rmem(t)=Ronx+Roff(1+x)
The Memorability of memristor passes through TiO2With TiO2-nBetween conversion embody.Device is being flowed through when electric current forward direction, Oxygen atom is under voltage effect by TiO2-nLayer drifts to TiO2Layer so that certain thickness TiO2Change turns to TiO2-n.Such Under change, the electric conductivity of device constantly strengthens, and the resistance of device reduces therewith.And when device both ends add a negative direction voltage When, oxygen atom is under voltage effect by TiO2Drift to TiO2-n, certain thickness TiO2-nChange turns to TiO2.Thus device is led Electrically constantly weaken, device resistance also increases therewith.In addition, experimental studies have found that, when memristor both end voltage is less than a certain threshold During threshold voltage, migration impurity speed very little even 0, now the electric field at device both ends be insufficient to allow impurity occur move on a large scale Move, memristor shows as linear resistance；When memristor both end voltage is more than threshold voltage, electric field constantly strengthens therewith, impurity Migration rate starts in exponential increase, and memristor resistance changes.This phenomenon is as shown in Fig. 2 add excitation V to memristor (in)=2sin (t) (V), threshold voltage vt=0.5V is set.As | V (in) | during ＞ Vt, memristor is by resistance with flowing through Electric current and change.The present invention proposes a kind of programmable circuit designs thinking and memristor based on memristor based on this phenomenon Device resistance control circuit.Programmable circuit system is made up of memristor resistance control circuit, memristor, circuit system three parts, As shown in Figure 3.Memristor resistance control circuit is made up of 4 NMOS tubes, as shown in Figure 4.
Preferably, programmable circuit proposed by the present invention be using memristor resistance under the control of program voltage according to being System demand carries out respective change, so as to reach the programmable effect of control system output parameter.On this basis, the present invention enters one The memristor resistance control circuit that step proposes is to produce to change memristor using the switching characteristic and diode connected mode of metal-oxide-semiconductor The electric current of device resistance.For the memristor resistance control circuit of the present invention using 4 NMOS tubes M1, M2, M3, M4, V1, V2 are that programming is defeated Inbound port, the shut-off of two NMOS tubes and the flow direction of electric current are controlled respectively.M1, M4 use diode connected mode, and diode connects The mode of connecing can make M1, M4 always work in saturation region, and its electric current does not change and changed with drain-source voltage, and its current value can basis Metal-oxide-semiconductor saturation region current formulaIt is roughly calculated, this method can help to quantify memristor The variable quantity of resistance.Program voltage V1, V2 that the present invention uses while NMOS tube operating voltage is provided, using pulse to memristor It is programmed, impulse amplitude, cycle and dutycycle can adjust according to circuit system demand.
Compared with prior art, the present invention has following beneficial effect：The present invention utilizes the variable characteristic of memristor resistance, knot MOS circuit characteristics are closed, the circuit of design has reached the purpose of voltage-programming.It is of the invention compared with traditional programmed circuit, only need Using 4 NMOS tubes, circuit structure is simple, and idea is novel.Programmed circuit proposed by the present invention can be applied to sensitive to resistance Circuit system.If the voltage that certain resistance is applied to during circuit system normal work is less than memristor threshold voltage, and the resistance hinders Value is directly connected to the Important Parameters such as the output frequency of circuit system, bandwidth, gain, then the resistance can be recalled with proposed by the present invention Hinder device programmed circuit to substitute, so as to reach the programmable effect of system output parameter.
Brief description of the drawings
Fig. 1 is the illustraton of model of memristor.
Fig. 2 is memristor model voltage, electric current and resistance curve.
Fig. 3 is the principle schematic of the present invention.
Fig. 4 is the memristor resistance control module circuit diagram of the present invention.
Fig. 5 is memristor resistance control module circuit simulation curve of the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawings and embodiment the present invention will be further described.
Present embodiments provide a kind of programmable circuit based on Memristor/MOSFET, including the control of memristor resistance Module, memristor, circuit system；The memristor resistance control module includes the first NMOS tube M1, the second NMOS tube M2, the 3rd NMOS tube M3, the 4th NMOS tube M4, the draining of the grid of the first NMOS tube M1 and the first NMOS tube M1, described second NMOS tube M2 grid is connected and is used as the first programming input mouth of the memristor resistance control module, the 3rd NMOS Pipe M3 grid is connected with the drain electrode of the grid, the 4th NMOS tube M4 of the 4th NMOS tube M4 and is used as the memristor Second programming input mouth of resistance control module, the source electrode of the first NMOS tube M1 and the drain electrode of the 3rd NMOS tube M3 Be connected and be used as the memristor resistance control module plus resistance output port, the drain electrode of the second NMOS tube M2 with it is described 4th NMOS tube M4 source electrode is connected and is used as the drag reduction value output port of the memristor resistance control module, and described second The source grounding of NMOS tube M2 source electrode and the 3rd NMOS tube M3；First programming of the memristor resistance control module To access program voltage, the memristor resistance control module adds resistance output for input port and the second programming input mouth Port is connected with both ends of the drag reduction value output port respectively with the memristor, and the both ends of the memristor are respectively connecting to described Two input ports of circuit system.
In the present embodiment, the first NMOS tube M1, the 4th NMOS tube M4 use diode connected mode.
The present embodiment additionally provides a kind of implementation method of the programmable circuit based on Memristor/MOSFET：Will input Program voltage inputs the first programming input mouth and the second programming input mouth of the memristor resistance control module, respectively The first NMOS tube M1, the second NMOS tube M2 and the 3rd NMOS tube M3, the 4th NMOS tube M4 shut-off and the flow direction of electric current are controlled, The memristor is programmed using pulse, wherein impulse amplitude, cycle and dutycycle adjust according to circuit system demand.
In the present embodiment, the first NMOS tube M1 and the 4th NMOS tube M4 uses diode connected mode, uses So that the first NMOS tube M1, the 4th NMOS tube M4 always work in saturation region, its electric current does not change and changed with drain-source voltage, its The calculating of middle current value uses following formula：
Wherein, IDFor the drain current of NMOS tube, unFor electron transfer rate, CoxFor unit area oxide layer capacitance, W is Channel width, L be raceway groove length, VGSFor the voltage between the Gate poles of NMOS tube source, VTHFor the threshold voltage of NMOS tube.
In the present embodiment, first programming input and the program voltage V of second programming input input1,V2 The operating voltage of NMOS tube is provided.
Memristor memory resistor and can be received much concern the advantages that Nano grade size with it as electronic device of new generation. Memristor have it is simple in construction, with the advantage such as cmos circuit compatibility is good, integration is high, power consumption is low, it is non-easily in high density The property lost memory, artificial intelligence, image procossing, logical operation, RFID, cloud computing, imictron cynapse, control system, letter Number processing etc. have huge application potential.The model of wherein memristor is as shown in Figure 1.
The resistance at memristor moment is current related with flowing through before, and internal structure shows as doped region and undoped region Ratio determine its current resistance.The position of doped region and undoped region border is represented with x, D represents the width of titanium oxide layer； RonWith RoffIn opening it is that oxide is all TiO for model2-nIt is that oxide is all TiO with off state2When resistance.Recall It is related with the electric current flowed through to the position x on undoped border to hinder device moment doped region, while x value determines resistance this moment Value, correlation formula are as follows：
X (t)=∫ ki (t) f (x) dt,F (x) is window function；
Rmem(t)=Ronx+Roff(1+x)
The Memorability of memristor passes through TiO2With TiO2-nBetween conversion embody.Device is being flowed through when electric current forward direction, Oxygen atom is under voltage effect by TiO2-nLayer drifts to TiO2Layer so that certain thickness TiO2Change turns to TiO2-n.Such Under change, the electric conductivity of device constantly strengthens, and the resistance of device reduces therewith.And when device both ends add a negative direction voltage When, oxygen atom is under voltage effect by TiO2Drift to TiO2-n, certain thickness TiO2-nChange turns to TiO2.Thus device is led Electrically constantly weaken, device resistance also increases therewith.In addition, experimental studies have found that, when memristor both end voltage is less than a certain threshold During threshold voltage, migration impurity speed very little even 0, now the electric field at device both ends be insufficient to allow impurity occur move on a large scale Move, memristor shows as linear resistance；When memristor both end voltage is more than threshold voltage, electric field constantly strengthens therewith, impurity Migration rate starts in exponential increase, and memristor resistance changes.This phenomenon is as shown in Fig. 2 add excitation V to memristor (in)=2sin (t) (V), threshold voltage vt=0.5V is set.As | V (in) | during ＞ Vt, memristor is by resistance with flowing through Electric current and change.The present invention proposes a kind of programmable circuit designs thinking and memristor based on memristor based on this phenomenon Device resistance control circuit.Programmable circuit system is made up of memristor resistance control circuit, memristor, circuit system three parts, As shown in Figure 3.Memristor resistance control circuit is made up of 4 NMOS tubes, as shown in Figure 4.
Preferably, programmable circuit proposed by the present invention be using memristor resistance under the control of program voltage according to being System demand carries out respective change, so as to reach the programmable effect of control system output parameter.On this basis, the present invention enters one The memristor resistance control circuit that step proposes is to produce to change memristor using the switching characteristic and diode connected mode of metal-oxide-semiconductor The electric current of device resistance.For the memristor resistance control circuit of the present invention using 4 NMOS tubes M1, M2, M3, M4, V1, V2 are that programming is defeated Inbound port, the shut-off of two NMOS tubes and the flow direction of electric current are controlled respectively.M1, M4 use diode connected mode, and diode connects The mode of connecing can make M1, M4 always work in saturation region, and its electric current does not change and changed with drain-source voltage, and its current value can basis Metal-oxide-semiconductor saturation region current formulaIt is roughly calculated, this method can help to quantify memristor The variable quantity of resistance.Program voltage V1, V2 that the present invention uses while NMOS tube operating voltage is provided, using pulse to memristor It is programmed, impulse amplitude, cycle and dutycycle can adjust according to circuit system demand.
For the feasibility of proof scheme, in the present embodiment, V is simulatedpp=5V, T=200ms pulse are to memristor The change situation of resistance, it is successively that the V (1) in six cycles reduces function and the V in six cycles (2) increasings of memristor resistance respectively The function of big memristor resistance.As V (1)=5V, V (2)=0V, the shut-off of M3, M4 pipe.M1 uses diode connected mode, begins Meet V eventuallyDS＞ VGS-Vth, so M1 is turned on and is operated in saturation region.M2 pipes are also switched on, but because its drain terminal voltage is too small, therefore M2 works in linear resistance area, conducting electric current.So forward direction is flowed through memristor, memristor by electric current caused by program voltage V (1) Device resistance reduces；Similarly, as V (2)=5V, V (1)=0V, M1, M2 pipe shut-off, M4 pipes are turned on and work in saturation region, and M3 is led Lead to and work in linear resistance area, negative sense is flowed through memristor, the increase of memristor resistance by electric current caused by program voltage V (2).Figure The process that program voltage V (1), V (2) change memristor resistance, middle Ix (U1 are given in 5:PLUS it is) that program voltage produces Change memristor resistance electric current, the electric current is metal-oxide-semiconductor saturation current, tends to a definite value.
Particularly, NMOS tube working condition when following table is programs：
Following table is circuit simulation device parameter：
The foregoing is only presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with Modification, it should all belong to the covering scope of the present invention.

Claims (4)

  1. A kind of 1. programmable circuit based on Memristor, MOSFET, it is characterised in that：Including memristor resistance control module, Memristor, circuit system；The memristor resistance control module includes the first NMOS tube M1, the second NMOS tube M2, the 3rd NMOS Pipe M3, the 4th NMOS tube M4, the draining of the grid of the first NMOS tube M1 and the first NMOS tube M1, the 2nd NMOS Pipe M2 grid is connected and is used as the first programming input mouth of the memristor resistance control module, the 3rd NMOS tube M3 Grid be connected with the drain electrode of the grid, the 4th NMOS tube M4 of the 4th NMOS tube M4 and be used as the memristor resistance Second programming input mouth of control module, the source electrode of the first NMOS tube M1 are connected with the drain electrode of the 3rd NMOS tube M3 And add resistance output port, the drain electrode and the described 4th of the second NMOS tube M2 as the memristor resistance control module NMOS tube M4 source electrode is connected and is used as the drag reduction value output port of the memristor resistance control module, second NMOS tube The source grounding of M2 source electrode and the 3rd NMOS tube M3；First programming input of the memristor resistance control module Mouthful with the second programming input mouth to access program voltage, the memristor resistance control module plus resistance output port with Both ends of the drag reduction value output port respectively with the memristor are connected, and the both ends of the memristor are respectively connecting to the system electricity Two input ports on road.
  2. 2. a kind of implementation method of the programmable circuit based on Memristor, MOSFET based on described in claim 1, it is special Sign is：Program voltage is inputted to the first programming input mouth and the second programming input of the memristor resistance control module Port, the first NMOS tube M1, the second NMOS tube M2 and the 3rd NMOS tube M3, the 4th NMOS tube M4 shut-off and electricity are controlled respectively The flow direction of stream, the memristor is programmed using pulse, wherein impulse amplitude, cycle and dutycycle are according to circuit system need Ask to adjust.
  3. 3. a kind of implementation method of programmable circuit based on Memristor, MOSFET according to claim 2, it is special Sign is：The first NMOS tube M1 and the 4th NMOS tube M4 uses diode connected mode, to make the first NMOS tube M1, the 4th NMOS tube M4 always work in saturation region, and its electric current does not change and changed with drain-source voltage, the wherein calculating of current value Using following formula：
    <mrow> <msub> <mi>I</mi> <mi>D</mi> </msub> <mo>=</mo> <mfrac> <mn>1</mn> <mn>2</mn> </mfrac> <msub> <mi>u</mi> <mi>n</mi> </msub> <msub> <mi>C</mi> <mrow> <mi>o</mi> <mi>x</mi> </mrow> </msub> <mfrac> <mi>W</mi> <mi>L</mi> </mfrac> <msup> <mrow> <mo>(</mo> <msub> <mi>V</mi> <mrow> <mi>G</mi> <mi>S</mi> </mrow> </msub> <mo>-</mo> <msub> <mi>V</mi> <mrow> <mi>T</mi> <mi>H</mi> </mrow> </msub> <mo>)</mo> </mrow> <mn>2</mn> </msup> <mo>;</mo> </mrow>
    Wherein, IDFor the drain current of NMOS tube, unFor electron transfer rate, CoxFor unit area oxide layer capacitance, W is raceway groove Width, L be raceway groove length, VGSFor the voltage between NMOS tube grid source electrode, VTHFor the threshold voltage of NMOS tube.
  4. 4. a kind of implementation method of programmable circuit based on Memristor, MOSFET according to claim 2, it is special Sign is：The first programming input mouth and the program voltage V of the second programming input mouth input1,V2NMOS tube is provided Operating voltage.
CN201610069637.5A 2016-02-01 2016-02-01 A kind of programmable circuit and its implementation based on Memristor/MOSFET Active CN105551520B (en)

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