CN105543777A - Mask manufacturing method for deposition - Google Patents
Mask manufacturing method for deposition Download PDFInfo
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- CN105543777A CN105543777A CN201510386581.1A CN201510386581A CN105543777A CN 105543777 A CN105543777 A CN 105543777A CN 201510386581 A CN201510386581 A CN 201510386581A CN 105543777 A CN105543777 A CN 105543777A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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Abstract
The embodiment of the invention discloses a mask manufacturing method for deposition, and relates to a mask manufacturing method, through which laser is used to process a base material so as to process a pattern slot of a mask for deposition, for the deposition. The method is characterized in that the pattern slot is process through changing of a cross section of the laser irradiated onto the base material.
Description
Technical field
Embodiments of the present invention relate to deposition mask manufacture method.
Background technology
Usually, as active light emissive type display element, organic light-emitting display device as one of panel display not only has the advantage that visual angle is wide, contrast gradient is excellent, but also have and by low voltage drive, flats in light weight and the advantage of fast response time, can get most of the attention as display element of future generation thus.
This luminous element is divided into inorganic light-emitting device and organic illuminating element according to the material forming luminescent layer, and compared to inorganic light-emitting device, organic illuminating element have the characteristic such as brightness, response speed outstanding, with the advantage of colour display etc., therefore its exploitation widely can be carried out recently.
Organic light-emitting display device forms organic membrane and/or electrode by vacuum deposition method.But along with organic light-emitting display device is gradually by high resolving power, the width of the open slit (openslit) of mask used in depositing operation narrows gradually and its distribution also needs to be reduced further.
In addition, in order to manufacture high resolving power organic light-emitting display device, need to reduce or remove shade phenomenon (shadoweffect).For this reason, carry out depositing operation under the state be close at substrate and mask at present, and rising the exploitation of the technology of the attachment degree for improving substrate and mask.
Above-mentioned background technology to be invention people the be technical intelligence that show that embodiments of the present invention have or in the technical intelligence drawing acquistion in process might not be the known technology being disclosed in general public before the application of embodiments of the present invention.
Summary of the invention
Embodiments of the present invention provide deposition mask manufacture method.
One embodiment of the present invention openly deposits with mask manufacture method, relate to the deposition mask manufacture method using laser to process to process the pattern slit of deposition mask to base material, it is characterized in that, by changing the cross section being irradiated to the laser of base material, processing graphic pattern slit.
In the present embodiment, the sidewall of pattern slit has the inclination angle of the one side of laser can be greater than 90 degree relative to irradiating in base material.
In the present embodiment, can comprise and to be arranged to the mode of the one side of the base material faced by the emission part of Emission Lasers to base material irradiating laser to form the step of the datum hole running through base material so that the first cross section of laser is irradiated to; And in the mode second cross section, cross section to the n-th (n is the natural number of more than 3) of laser being irradiated to successively base material to the area illumination laser adjacent with datum hole to form the step of pattern slit in the substrate, wherein, the second cross section, cross section to the n-th has the diameter less than the diameter in the first cross section of laser.
In the present embodiment, its feature can be, the second cross section, cross section to the n-th has the diameter reduced successively.
In the present embodiment, the second cross section, cross section to the n-th that the step forming pattern slit in the substrate can comprise to the region adjacent with datum hole successively irradiating laser forms the step of the first end difference portion to m end difference portion (m is the natural number of more than 2) using the one side side from base material successively towards the another side side as opposite face simultaneously.
In the present embodiment, its feature can be, the first end difference portion has the area diminished successively to m end difference portion.
In the present embodiment, its feature can be, by changing n, to the n-th cross section of the area illumination laser adjacent with datum hole.
In the present embodiment, its feature can be, the method for in the first cross section, cross section to the n-th of selection laser is the distance of the emission part regulating base material and Emission Lasers.
In the present embodiment, its feature can be, regulates the method for the distance between base material and emission part to be that any one making in the support of emission part and supporting substrate carries out relative movement relative to another.
In the present embodiment, the first diameter being formed in the datum hole of the one side side of base material can be formed as larger than the Second bobbin diameter of the datum hole of the another side relative with one side being formed in base material.
In the present embodiment, can to comprise in the mode n-th cross section (n is the natural number of more than 1) of laser being irradiated to the one side of base material to base material irradiating laser to form the first step of m baseline trough (m is the natural number of more than 1) in the substrate; (n+1)th cross section with the diameter less than the diameter in the n-th cross section of laser to be irradiated to the second step of mode to the area illumination laser adjacent with m baseline trough of base material; And repeatedly perform first step and second step to form the step of pattern slit in the substrate.
In the present embodiment, its feature can be, m baseline trough has the area corresponding with the area of m+1 baseline trough.
In the present embodiment, its feature can be, m baseline trough has the area larger than the area of m+1 baseline trough.
In the present embodiment, second step can comprise the (n+1)th cross section to the area illumination laser adjacent with m baseline trough to form the step of p groove (p is the natural number of more than 1) towards the another side side of the opposite face as one side from the one side side of base material.
In the present embodiment, its feature can be, p groove has the area larger than the area of p+1 groove.
In the present embodiment, its feature can be, by changing n, to the (n+1)th cross section of the area illumination laser adjacent with m baseline trough.
In the present embodiment, its feature can be, selects the distance of a kind of method in the n-th cross section of laser and the (n+1)th cross section for a change emission part of base material and Emission Lasers.
In the present embodiment, its feature can be, regulates the method for the distance between base material and emission part to be that any one making in the support of supporting substrate and emission part carries out relative movement relative to another.
By the following drawings, right and detailed description of the invention, other aspects in addition to the foregoing, feature, advantage will become clear and definite.
According to the embodiment of the present invention, deposition mask manufacture method can improve the process velocity of deposition mask.
Accompanying drawing explanation
Fig. 1 a and Fig. 1 b illustrates the view according to the emission part used in the deposition mask manufacture method of embodiment of the present invention and the various deformation example from the laser of emission part irradiation.
Fig. 2 a to Fig. 2 h is the sectional view of the deposition mask manufacture method illustrated according to embodiment of the present invention.
Fig. 3 a to Fig. 3 i is the sectional view of the deposition mask manufacture method illustrated according to embodiment of the present invention.
Embodiment
The present invention can implement multiple modification and can have numerous embodiments, and purport particular implementation shown in the drawings being described in detail.By referring to the embodiment be described with reference to the accompanying drawings, effect of the present invention and feature and the method realizing it will become clear and definite.But, embodiment disclosed below the present invention is not limited to, but can realize by variform.In embodiment below, the wording of " first ", " second " etc. does not have the implication of restriction, but uses with an object integrant and other integrants distinguished.In addition, clearly indicate unless separately had in literary composition, otherwise the statement of odd number comprises the statement of plural number.In addition, the wording of " comprising " or " having " etc. refers to the existence of feature or the integrant recorded described in specification sheets, instead of gets rid of the additional possibility of other features more than one or integrant in advance.
In addition, in order to the facility illustrated, in accompanying drawing, the size of integrant can be exaggerated or reduced.Such as, in order to the facility illustrated, size and the thickness of each component shown in accompanying drawing are illustrated arbitrarily, and therefore the present invention might not be defined in shown in figure.In addition, when realizing some embodiment in a different manner, specific technique can perform according to the order different from illustrated order.Such as, two techniques illustrated continuously can perform in fact simultaneously, also can carry out according to the order contrary with illustrated order.
Below, with reference to the accompanying drawings embodiments of the present invention are described in detail, and when being described with reference to accompanying drawing, give identical Reference numeral by identical or corresponding integrant, and the repeated description of will omit it.
Before the manufacture method of the deposition mask according to embodiment of the present invention is described, first with reference to Fig. 1 a and Fig. 1 b to be irradiated to processed before the characteristic of laser of base material of deposition mask be described.
Fig. 1 a and Fig. 1 b illustrates the view according to the emission part used in the deposition mask manufacture method of embodiment of the present invention and the various deformation example from the laser of emission part irradiation.
With reference to Fig. 1 a, emission part 100a can radiate the laser L that side has arch (arch) shape of certain curvature.Herein, Reference numeral L
1, L
2, L
nand L
n+1respectively as first cross section of laser L, the second cross section, the n-th cross section, the (n+1)th cross section, their represent the section area with the laser L of diameter different from each other.
The diameter being irradiated to the laser L of base material 200 can be selected by regulating the distance H between emission part 100a and base material 200.Such as, when by the distance adjustment of emission part 100a and base material 200 being and Reference numeral H
1time suitable, can irradiate to base material 200 and there is the first cross section L
1laser L, and when being adjusted to and H
2time suitable, can irradiate to base material 200 and there is the second cross section L
2laser L.
Therefore, by regulating the distance H between emission part 100a and base material 200, multiple size can be irradiated to base material 200 and (that is, there is the n-th cross section L
n(n is the natural number of more than 1)) laser L.
In addition, except the method for the distance between above-mentioned adjustment emission part 100a and base material 200, can also have multiple for irradiating the method with the laser L of multiple diameter to base material 200.
As an example, with reference to Fig. 1 b, as the method that can change the diameter of laser in the focal position of laser focusing, can be used as under static state the parts such as Zoom lens unit and focusing unit of the opticinstrument passed through for laser and the wide little parts of other multiple conversion change laser L diameter and without the need to regulating the distance of emission part 100b and base material 200.That is, under the state that the distance of emission part 100b and base material 200 is maintained certain distance, can be irradiated by the diametrically base material 200 changing laser L and there is the n-th cross section L
nthe laser L of (n is the natural number of more than 1).
Based on to having cross section (that is, the n-th cross section L of above-mentioned multiple size
n(n is the natural number of more than 1)) be irradiated to the understanding of the laser L on base material 200, hereinafter by using the deposition mask manufacture method of this laser L to be described.
Fig. 2 a to Fig. 2 h is the sectional view of the deposition mask manufacture method illustrated according to embodiment of the present invention.
With reference to Fig. 2 a, first prepare the base material 200 supported by support 300.Then, emission part 100 to be registered on base material 200 and to base material 200 irradiating laser L to make the first cross section L of laser L
1be irradiated in the one side of base material 200.
Fig. 2 b shows by the first cross section L of laser L
1the form of the datum hole 210 that the base material 200 irradiated is formed.Now, the shape of datum hole 210 can be formed as corresponding with the shape of the laser L shown in Fig. 2 a.That is, that be formed in datum hole 210 with the first diameter D that the is datum hole 210 of the one side side faced by emission part 100
1can be formed as being greater than the Second bobbin diameter D be formed in as the datum hole 210 on the another side of the opposition side of one side
1'.In addition, identical with the shape of laser L, the side of datum hole 210 can be formed as having certain curvature.
Form datum hole 210 in base material 200 after, as shown in Figure 2 c, again emission part 100 is registered to base material 200.Now, the laser L being irradiated to base material 200 has the second cross section L
2.This second cross section L
2diameter group D can be had
1little diameter D
2, wherein diameter D
1to be irradiated to the first cross section L of base material 200 before to form datum hole 210
1contact with base material 200 and formed.
In order to make the second cross section L
2have than the first cross section L
1little diameter, as mentioned above, distance (the Reference numeral h of Fig. 2 c between emission part 100 and base material 200
2) can (h be arranged greater than
2>h
1) machining benchmark hole 210 time emission part 100 and base material 200 between distance (the Reference numeral h of Fig. 2 a
1).In order to regulate the distance between emission part 100 and base material 200 by this way, any one in the support 300 of emission part 100 or supporting substrate 200 can carry out relative movement relative to another.
In addition, as mentioned above, the distance (h between emission part 100 and base material 200 is not being changed
1=h
2) when, such as Zoom lens unit and focusing unit on the path being arranged in laser L and the wide little parts of other multiple conversion also can be used to change the diameter of laser L to select the n-th cross section L
nwith the (n+1)th cross section L
n+1in one.
With reference to Fig. 2 d, the second cross section L will be had
2laser L be irradiated to the region adjacent with datum hole 210, thus around datum hole 210, form the first end difference portion 220a.
Then, with reference to Fig. 2 e, the 3rd cross section L will be had
3laser L be irradiated to by the second cross section L
2the lower surface of the first end difference portion 220a that formed of laser L, wherein, the 3rd cross section L
3have and the second cross section L
2diameter D
2identical or be less than its diameter D
3.3rd cross section L has been shown in Fig. 2 e
3diameter D
3be less than the second cross section L
2diameter D
2but embodiments of the present invention are not limited to this, the 3rd cross section L
3diameter D
3can be formed as and the second cross section L
2diameter D
2corresponding.
As the second cross section L
2diameter D
2with the 3rd cross section L
3diameter D
3time identical, the distance on emission part 100 and the surface of the base material 200 irradiated by laser L is (that is, at the second cross section L
2when Reference numeral h
2with at the 3rd cross section L
3when Reference numeral h
3) can be identical.In this case, the height that result in the base material 200 irradiated by laser L owing to being formed with the first end difference portion 220a lower than the height of the one side side of base material 200 is different, and therefore emission part 100 can move a determining deviation to make Reference numeral h towards base material 200 side
2with h
3mutually the same.Identical therewith, the support 300 of supporting substrate 200 also can move a determining deviation towards the direction of emission part 100.
In addition, under the state that the position of emission part 100 is fixed, that is, at Reference numeral h
2with h
3' identical when, as mentioned above, such as Zoom lens unit and focusing unit and the wide little parts of other multiple conversion also can be used to change the diameter of laser L to select the n-th cross section L
nwith the (n+1)th cross section L
n+1in one.
Now, no matter any situation, the second cross section L
2with the 3rd cross section L
3preferably there is the first cross section L than using when forming datum hole 210
1little diameter.This is that wide region in order to first be removed base material 200 by laser L at the processing initial stage will pattern slit 250 described later promptly to process.
As shown in figure 2e, when having the 3rd cross section L
3laser L be irradiated to by the second cross section L
2laser L formed the lower surface of the first end difference portion 220a time, as shown in Fig. 2 f, the second end difference portion 220b is formed towards the another side side of base material 200.This second end difference portion 220b can have the area less than the first end difference portion 220a, and can form more than one m end difference portion (m is the natural number of more than 1) successively from the one side side of base material 200 towards another side side in this way.
Fig. 2 g shows and makes m end difference portion (m is the natural number of more than 1) run through the another side of base material 200 by processing this m end difference portion (m is the natural number of more than 1) successively, is finally processed into the form of the pattern slit 250 running through base material 200.
In detail, with reference to Fig. 2 h, according to by irradiating, there is the first above-mentioned cross section L
1laser L formed datum hole 210 and respectively by base material 200 irradiate there is the second cross section L
2, the 3rd cross section L
3, the 4th cross section L
4laser L and the first end difference portion 220a, the second end difference portion 220b and the 3rd end difference portion 220c that are formed, pattern slit 250 is formed in base material 200.This pattern slit 250 can play the work that passes through for deposited material in order to be deposited on substrate (not shown) by deposited material when depositing operation.
Herein, although Fig. 2 h shows with the first end difference portion 220a, the second end difference portion 220b and the 3rd end difference portion 220c, namely, with three end difference processing graphic pattern slits 250, but embodiments of the present invention are not limited to this, and can be processed pattern slit 250 by the more than one m end difference portion of processing (m is the natural number of more than 1).
As mentioned above, for machining benchmark hole 210 and more than one m end difference portion (m is the natural number of more than 1), when using change to be irradiated to the method for the diameter of the laser L of base material 200, can effectively remove the dyke be formed in around pattern slit 250 while promptly processing graphic pattern slit 250, thus shade phenomenon can be improved.
Fig. 3 a to Fig. 3 i is the sectional view of the deposition mask manufacture method illustrated according to another embodiment of the present invention.
With reference to Fig. 3 a, as aforesaid in the explanation for Fig. 2 a, first prepare the base material 200 supported by support 300.Subsequently, emission part 100 is registered on base material 200, thus laser L is irradiated on base material 200 to make the first cross section L of laser L
1be irradiated to the one side with the base material 200 faced by emission part 100.
Fig. 3 b shows the first baseline trough 230a and is formed in by the first cross section L of laser L
1the form of the one side of the base material 200 irradiated.Different from the datum hole 210 shown in Fig. 2 a, this first baseline trough 230a is not formed as running through base material 200, on the contrary, and can so that the mode in relatively wide region can be processed by having the first cross section L in the one side of base material 200
1laser L be irradiated to the one side of base material 200 and formed.
In detail, the laser L irradiated for processing the first baseline trough 230a can have the output less than the laser L irradiated for machining benchmark hole (Reference numeral 210 of Fig. 2 b).This means to process the first baseline trough 230a with the volume less than datum hole 210 by the laser L with less output being irradiated to base material 200.
In addition, if the output of the laser L irradiated for machining benchmark hole 210 and the first baseline trough 230a is identical in fact, then can process the first baseline trough 230a by regulating the time of launch being irradiated to the laser L of base material 200.That is, by irradiating base material 200 with the time shorter than the open-assembly time of the laser L needed for machining benchmark hole 210, differently the first baseline trough 230a not running through base material 200 can be worked on base material 200 with datum hole 210.
Then, Fig. 3 c shows and will have the second cross section L
2laser L be irradiated to the form in the region adjacent with the first baseline trough 230a formed on substrate 200.Second cross section L
2the first cross section L than using for processing the first baseline trough 230a can be had
1diameter D
1little diameter D
2.Because describe in detail the method for the sectional area regulating laser L hereinbefore, so hereinafter will omit or sketch the n-th cross section L changing laser L
n(n is the natural number of more than 1) is also irradiated to the method for base material 200.
With reference to Fig. 3 d, by this method, that is, by the second cross section L will be had
2laser L be irradiated to the region adjacent with the first baseline trough 230a, the first groove 240a is formed in the one side with the base material 200 faced by emission part 100.
Then, with reference to Fig. 3 e, the n-th cross section L will be had
nthe laser L of (n is the natural number of more than 1) is irradiated to the lower surface of the first groove 240a.N-th cross section L
n(n is the natural number of more than 1) can be chosen as the first cross section L with multiple diameter by changing n
1, the second cross section L
2to the n-th cross section L
nin any one, and preferably can be chosen as and have at least than the second cross section L that processing first groove 240a uses
2n-th cross section L of little diameter
n(n is the natural number of more than 1).
With reference to Fig. 3 f, by by this n-th cross section L
nthe lower surface that the laser L of (n is the natural number of more than 1) is irradiated to the first groove 240a forms the second baseline trough 230b.The n-th cross section L of the laser L that the size of the second baseline trough 230b uses along with processing second baseline trough 230b
nthe diameter of (n is the natural number of more than 1) changes, and preferably, by selecting that there is the second cross section L used than processing first groove 240a
2n-th cross section L of little diameter
n(n is the natural number of more than 1), thus can process identical with the area of the first baseline trough 230a or there is the second baseline trough 230b of the area less than it.
Then, with reference to Fig. 3 g, by having than the n-th cross section L
nthe diameter D of (n is the natural number of more than 1)
nlittle diameter D
n+1the (n+1)th cross section L
n+1the laser L of (n is the natural number of more than 1) be irradiated to by the n-th cross section L
nthe region that the second baseline trough 230b that the laser L of (n is the natural number of more than 1) is formed is adjacent, as shown in Fig. 3 h, the another side side towards base material 200 forms the second groove 240b.This second groove 240b can be formed with the area less than the first groove 240a.
In detail, with reference to Fig. 3 i, when processing this m baseline trough (m is the natural number of more than 1) successively and p groove (p is the natural number of more than 1) makes p groove (p is the natural number of more than 1) run through the another side of base material 200, finally pattern slit 250 can be processed in base material 200.
Now, the sectional area for the laser L processing m baseline trough (m is the natural number of more than 1) and p groove (p is the natural number of more than 1) elects the n-th cross section L as
n, wherein, while changing n, the n-th cross section L with multiple diameter can be irradiated to base material 200
nlaser L.
But, as mentioned above, preferably make the n-th cross section L of the laser L for processing m baseline trough (m is the natural number of more than 1)
n(n is the natural number of more than 1) has the n-th cross section L than the laser L for processing p groove (p is the natural number of more than 1)
nthe diameter that (n is the natural number of more than 1) is large.
This is the process period in order to shorten pattern slit 250, such as, process the technique of m baseline trough (m is the natural number of more than 1) as a kind of preliminary process, it is the technique of cutting with the base material 200 of laser L to wide area in advance in order to the processing of pattern slit 250.In addition, in the technique of the region processing p groove (p be the natural number of more than 1) adjacent with m baseline trough (m is the natural number of more than 1) as the technique for precision sizing pattern slit 250, the diameter therefore for the laser L processing p groove (p is the natural number of more than 1) preferably has the diameter less than the diameter of the laser L for processing m baseline trough (m is the natural number of more than 1).
In detail, can summarize as follows the technique of processing graphic pattern slit 250.First, with the n-th cross section L of laser L with relatively large diameter
nafter (n is the natural number of more than 1) is processed base material 200 and process m baseline trough (m is the natural number of more than 1) in the wide region of base material 200, with the (n+1)th cross section L of laser L with relatively little diameter
n+1(n is the natural number of more than 1) forms p groove (p is the natural number of more than 1) in the region adjacent with m baseline trough (m is the natural number of more than 1), repeatedly perform the technique of formation m baseline trough (m is the natural number of more than 1) and p groove (p is the natural number of more than 1) subsequently, thus can promptly process pattern slit 250 in base material 200.
In addition, the n-th cross section L of laser L is selected
nthe method of (n is the natural number of more than 1) comprises the method for the distance changed between emission part 100 and base material 200, and can under the state of distance between fixed launching portion 100 and base material 200, use the such as Zoom lens unit and focusing unit that are configured on the path of laser L and the wide little parts of other multiple conversion to select the n-th cross section L
n(n is the natural number of more than 1) and the distance do not changed between emission part 100 and base material 200.Because hereinbefore to this has been specific descriptions, therefore the repeated description to it will be omitted.
As mentioned above, although describe the present invention with reference to the embodiment shown in accompanying drawing, this is only exemplary, and those of ordinary skill in the art should be understood that the modification can carrying out multiple modification and embodiment thus.Therefore, the technical protection scope that the present invention is real should be defined by the technological thought in appended claims.
Nomenclature
100: emission part 230c: the three baseline trough
200: base material 240a: the first groove
210: datum hole 240b: the second groove
220a: the first end difference portion 240c: the three groove
220b: the second end difference portion 250: pattern slit
220c: the three end difference portion 300: support
230a: the first baseline trough L: laser
230b: the second baseline trough L
n: the n-th cross section (n is the natural number of more than 1)
Claims (18)
1. a deposition mask manufacture method, it uses laser to process to base material the pattern slit processing deposition mask, it is characterized in that,
By changing the cross section being irradiated to the described laser of described base material, process described pattern slit.
2. deposition mask manufacture method as claimed in claim 1, the sidewall of described pattern slit has the inclination angle of the one side of described laser to be greater than 90 degree relative to irradiating in described base material.
3. deposition mask manufacture method as claimed in claim 1, comprising:
Described laser is irradiated to form the step running through the datum hole of described base material to described base material in the mode the first cross section of described laser being irradiated to the one side of described base material; And
In the mode the second cross section, cross section to the n-th of described laser being irradiated to successively described base material to laser described in the area illumination adjacent with described datum hole to form the step of pattern slit in described base material, described second cross section to described n-th cross section has the diameter less than the diameter in described first cross section, wherein, n is the natural number of more than 3.
4. deposition mask manufacture method as claimed in claim 3, is characterized in that, described second cross section to described n-th cross section has the diameter reduced successively.
5. deposition mask manufacture method as claimed in claim 3, the step forming pattern slit in described base material comprises:
Described second cross section irradiating described laser to the region adjacent with described datum hole successively to described n-th cross section forms the step of the first end difference portion to m end difference portion successively using the another side side from the described one side side of described base material towards the opposite face as described one side, wherein, m is the natural number of more than 2.
6. deposition mask manufacture method as claimed in claim 5, is characterized in that, described first end difference portion to described m end difference portion has the area reduced successively.
7. deposition mask manufacture method as claimed in claim 3, is characterized in that, by changing described n, to described n-th cross section of laser described in the area illumination adjacent with described datum hole.
8. deposition mask manufacture method as claimed in claim 3, is characterized in that, selects the method for in described first cross section of described laser to described n-th cross section to be the distance of the emission part regulating described base material and the described laser of transmitting.
9. deposition mask manufacture method as claimed in claim 8, it is characterized in that, regulate the method for the distance between described base material and described emission part to be make described emission part and any one supporting in the support of described base material carry out relative movement relative to another.
10. deposition mask manufacture method as claimed in claim 3, is characterized in that,
Be formed in the described one side side of described base material, the first diameter of described datum hole be formed as than the another side relative with described one side being formed in described base material, the Second bobbin diameter of described datum hole is large.
11. deposition mask manufacture methods as claimed in claim 1, comprising:
Irradiate described laser to form the first step of m baseline trough in described base material in the mode the n-th cross section of described laser being irradiated to the one side of described base material to described base material, wherein, n is the natural number of more than 1, and m is the natural number of more than 1;
(n+1)th cross section with the diameter less than the diameter in described n-th cross section of described laser to be irradiated to the second step of mode to laser described in the area illumination adjacent with described m baseline trough of described base material; And
Repeatedly perform described first step and described second step to form the step of pattern slit in described base material.
12. deposition mask manufacture methods as claimed in claim 11, it is characterized in that, described m baseline trough has the area corresponding with the area of m+1 baseline trough.
13. deposition mask manufacture methods as claimed in claim 11, it is characterized in that, described m baseline trough has the area larger than the area of m+1 baseline trough.
14. deposition mask manufacture methods as claimed in claim 11, described second step comprises:
Form the step of p groove to described (n+1)th cross section of laser described in the area illumination adjacent with described m baseline trough using the another side side from the described one side side of described base material towards the opposite face as described one side, wherein, p is the natural number of more than 1.
15. deposition mask manufacture methods as claimed in claim 14, it is characterized in that, described p groove has the area larger than the area of p+1 groove.
16. deposition mask manufacture methods as claimed in claim 11, is characterized in that, by changing described n, to described (n+1)th cross section of laser described in the area illumination adjacent with described m baseline trough.
17. deposition mask manufacture methods as claimed in claim 11, is characterized in that, select for a change described base material and the distance of emission part of launching described laser of a kind of method in described n-th cross section of described laser and described (n+1)th cross section.
18. deposition mask manufacture methods as claimed in claim 17, it is characterized in that, regulate the method for the distance between described base material and described emission part to be make described emission part and any one supporting in the support of described base material carry out relative movement relative to another.
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| KR10-2014-0146423 | 2014-10-27 | ||
| KR1020140146423A KR102291486B1 (en) | 2014-10-27 | 2014-10-27 | Method of manufacturing mask for deposition |
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| CN105543777A true CN105543777A (en) | 2016-05-04 |
| CN105543777B CN105543777B (en) | 2020-03-03 |
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| KR20180059606A (en) | 2016-11-25 | 2018-06-05 | 삼성디스플레이 주식회사 | mask for deposition, manufacturing method thereof and manufacturing method of display apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN105543777B (en) | 2020-03-03 |
| KR102291486B1 (en) | 2021-08-20 |
| KR20160049383A (en) | 2016-05-09 |
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