CN105525271A - Film deposition apparatus - Google Patents
Film deposition apparatus Download PDFInfo
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- CN105525271A CN105525271A CN201410507630.8A CN201410507630A CN105525271A CN 105525271 A CN105525271 A CN 105525271A CN 201410507630 A CN201410507630 A CN 201410507630A CN 105525271 A CN105525271 A CN 105525271A
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- pipe
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Abstract
The present invention discloses a film deposition apparatus, which comprises: a treatment pipe, wherein the treatment pipe comprises a first reaction space and a second reaction space, the first reaction space and the second reaction space are separated through a separation part to make gas be not communicated, and substrates are placed in each reaction space; a heating source, wherein the heating source comprises a heating element, the heating element forms a hollow heating space, and the treating pipe penetrates through the heating space; a guide rail, wherein the heating source is supported by the guide rail so as to slide along the longitudinal axis line of the guide rail and perform conversion heating between the first reaction space and the second reaction space; at least a reaction gas pipe, wherein a first reaction gas can be introduced through the reaction gas pipe so as to flow into the first reaction space, and a second reaction gas can be introduced through the reaction gas pipe so as to flow into the second reaction space; and at least a gas discharge pipe, wherein gas is discharged from the first reaction space and the second reaction space through the gas discharge pipe.
Description
Technical field
The present invention relates to chemical process equipment, the device of particularly chemical vapour deposition.
Background technology
Chemical vapour deposition (CVD) is widely used in semi-conductor industry and other are used for preparing in substrate in the industry of nonvolatile solid state film.In the CVD technique of routine, composition and reactant gases are passed into and are placed with in the reaction compartment of substrate, and with substrate generation chemical reaction, substrate forms film, meanwhile, the by product produced in reaction is discharged from reaction compartment.Tube furnace CVD system is generally used for deposit film.In a traditional tube furnace CVD system, a cylindrical quartz or aluminum oxide processing tube are used as reaction chamber, process pipe is surrounded by process furnace, and process furnace is the heating unit (such as heater coil) of resistive heating, for heating the substrate being positioned at process pipe.Chemical reaction agent normally flows into process pipe from one end of pipe, and unreacted reactant and byproduct of reaction are discharged from the other end of process pipe.
But tube furnace CVD system exists many deficiencies, one of them shortcoming is by rapid thermal process (RTP; Rapidthermalprocessing) limit, need the speed of rapid heating and cooling.The method utilizing tube furnace CVD system to carry out rapid thermal process utilizes long process pipe, can along the running lengthwise of described process pipe.The method of another kind of rapid heating process is can be realized by the substrate making preheating oven be enclosed in process pipe.Quick process of cooling can move stove distance by being positioned at described process pipe from wherein said substrate realizes.But complete when film deposition process and move to cold position at hot stove, some molecules be adsorbed on this position in the wall of process pipe are resolved due to the Rapid Variable Design of temperature, and these molecules may pollute or damage and be deposited on suprabasil film.In addition, output is by the impact of the cooling time required for compression and decompression substrate.
For above-mentioned reasons, be necessary to improve CVD reactor, high heating and cooling speed can be realized and there is high yield simultaneously and do not pollute or damage the film of product.
Summary of the invention
The object of the invention is to provide promotion high quality, is prepared the device of film by chemical vapour deposition.
The invention provides a kind of device of deposited film, it is characterized in that, described device comprises:
Process pipe, described process pipe comprises the first reaction compartment and the second reaction compartment, and the second reaction compartment and the first reaction compartment are separated by isolation part makes gas not be conducted, and is all placed with substrate in each reaction compartment;
Heating source, described heating source comprises heating unit, and described heating unit defines hollow heating space, and described process pipe is through described heating space;
Guide rail, described heating source by described guide supporting, thus slides along the longitudinal axis of guide rail, in the first reaction compartment and the second reaction compartment conversion heating;
At least one reactant gases pipe, described reactant gases pipe can be introduced the first reactant gases and flow into the first reaction compartment, and introduces the second reactant gases and flow into the second reaction compartment; And at least one vapor pipe, described vapor pipe is from described first reaction compartment with from described second reaction compartment Exhaust Gas.
Preferably, described device also comprises the adapter and adapter support portion that are connected with process pipe, described adapter is communicated with reactant gases pipe vapor pipe respectively, and what described adapter was slided by adapter support portion is connected on guide rail, thus can hold the tubing of different lengths.
Preferably, described adapter comprises water cooling flange and speed reduction unit; Described speed reduction unit has left flange, right flange, upper flange and lower flange; Lower flange is used as the port of the inlet mouth of reactant gases pipe, and upper flange is used as the port of venting port; The right flange of water cooling flange and speed reduction unit is passed in the end of described process pipe; Described adapter also comprise be placed between water cooling flange and right flange O shape circle and bolt be used for fixing speed reduction unit and water cooling flange; The angular extrusion O shape circle that water cooling flange and right flange are formed and process pipe outer wall, form gas-tight seal between adapter and process pipe.
Preferably, described adapter support portion height adjustable thus the tubing of different diameter can be held.
Preferably, described reactant gases pipe and vapor pipe are two, independently control the first reaction compartment and the second reaction compartment.
Preferably, described reactant gases pipe comprises gas source and flow director.
Preferably, described vapor pipe comprises the pressure transmitter, throttling valve, circle and the rotary machine pump that connect successively.
Beneficial effect of the present invention is: can carry out cooling substrate by utilizing two reaction compartments of chemical vapor deposition unit respectively simultaneously and carry out thin film deposition, and according to the moveable heating source of the present invention, solve fouling membrane and the problem of damage, obtained high-quality film.
Accompanying drawing explanation
Fig. 1 shows the side-view in CVD reactor according to an exemplary embodiment of the present invention;
Fig. 2 shows end view and the sectional view of the process pipe of CVD reactor described in Fig. 1;
Fig. 3 shows end view and the sectional view of gas pipeline in CVD reactor described in Fig. 1;
Fig. 4 shows the part sectioned view of the adapter of CVD reactor described in Fig. 1;
Fig. 5 A shows reactant gases pipe schematic diagram;
Fig. 5 B shows vapor pipe schematic diagram.
Embodiment
In order to make object of the present invention, feature and advantage more clear, below in conjunction with drawings and Examples, explanation is specifically made to the specific embodiment of the present invention, in the following description, set forth a lot of concrete details so that understand the present invention fully, but the present invention can implement in other modes being much different from description.Therefore, the present invention is not by the restriction of the concrete enforcement of following discloses.
The partial side elevation view of the CVD reactor 100 according to the embodiment of the present invention shown in Fig. 1.Described CVD reactor 100 is provided with heating source 102, and described heating source 102 comprises heating unit 104, and described heating unit 104 defines hollow cylinder heating space 106, and hollow process pipe 108 is through this heating space 106.
Fig. 2 shows the end view of process pipe 108 and the sectional view along plane shown in end view of process pipe 108.Described process pipe 108 has two opening ends, and at the middle part of process pipe 108, the effect of isolation part 110 is separated with left reaction compartment 112 by right reaction compartment 114, thus produce the CVD reactor that can be called as " two-chamber ".Isolation part 110 is airtight, and left reaction compartment 112 is not communicated with gaseous state with right reaction compartment 114.As shown in Figure 1, in the same manner as being arranged in left reaction compartment 112 with left bed support 116 and left substrate 118, right bed support 120 and right substrate 122 are arranged in right reaction compartment 114.
Reactant gases passes into left and right reaction compartment 112,114, and untapped reactant gases and byproduct of reaction are discharged from these reaction compartments 112,114.The adapter 124 of left end and the adapter 126 of right-hand member, respectively with left reactant gases pipe 128, right reactant gases pipe 130, left side vapor pipe 132 is communicated with right vapor pipe 134.Left reaction compartment 112, left reactant gases pipe 128 is by a left inlet mouth 136, be sent in left reaction compartment 112 the reactant gases inflow left end adapter 124 that the left inside flue 138 after entering left inside side flue is introduced, reactant gases is transported to left reaction compartment 112.
The reactant gases that the first opening 300 that Fig. 3 shows the end view of left flue 138 and left flue 138 receives flows into the sectional view that left reaction compartment 112 and the second opening 302 discharge reactant gases, simultaneously, when the gas 112 of left reaction compartment is by left bank gas port 140, gas is discharged to left bank tracheae 132.Dextrosinistral gas flows into the left substrate 118 of left reaction compartment 112, as shown by the arrow.In a similar fashion, reactant gases is by right reactant gases pipe 130, and right vapor pipe 134, right input port 142, right flue 144 and right gas exhaust port 146 flow to the right substrate 122 of right reaction compartment 114
With reference in Fig. 1, heating source 102 is supported slidably by two parallel guide rails 148.Guide rail 148 is fixed to ground by two mounting blocks 150.Heating source 102 slides along the longitudinal axis of guide rail.The adapter 124 and 126 of left and right end is also assemblied in guide rail 148 slidably via adapter support section 152.These adapter support portions 152 also along slide, can make CVD reactor 100 at left and right end portions adapter 124, move between 126, thus can hold the tubing of different lengths.Meanwhile, this adapter support portion 152 can highly adjust itself, makes CVD reactor 100 can hold the tubing of different diameter.When highly changing for the ease of these, adapter support portion 152 can comprise corresponding one group of telescopically adapting pipe by aim at hole and pin, by pneumatically actuated, hydraulic actuation etc. are fixed.
The detailed description of left end adapter 124 is shown in the part sectioned view of Fig. 4, and right-hand member adapter 126 is substantially similar, does not repeat them here.Left end adapter 124 comprises water cooling flange 400 and speed reduction unit 402.Described speed reduction unit 402 has left flange 404, right flange 406, upper flange 408 and lower flange 410.Lower flange 410 is used as the port of left inlet mouth 136, and upper flange 408 is used as left bank gas port 140.In order to connection handling pipe 108 and left end adapter 124, the left part of this process pipe 108 through water cooling flange 400 and the right flange 406 through speed reduction unit 402, but does not stop left inlet mouth 136 and left bank gas port 140.O shape circle 412 is placed on the right side between water cooling flange 400 and right flange 406.Bolt 414 is used for fixing speed reduction unit 402 and water cooling flange 400.O shape circle 412 on the right of the angular extrusion that water cooling flange 400 and right flange 406 are formed and process pipe 108 outer wall, form gas-tight seal between left end adapter 124 and process pipe 108.Left flange 404 is covered by blank flange 416.Center ring 418 and left O shape circle 420 are disposed in blank flange 416 and speed reduction unit 402 seals between the gap between them.Fixture 422 is for fixing and unclamping blank flange 416 and speed reduction unit 402.Metal hose 424 connects left flue 138 and left inlet mouth 136, for loading and unloading left substrate 118.
As noted above, the vapor pipe 132 that the reactant gases pipe 128,130 and two that use two is independent is independent, 134, reactant gases flows into the reaction compartment 112,114 of left and right, untapped reactant gases and byproduct of reaction, from these reaction compartments 112, are discharged in 114.Fig. 5 A shows reactant gases pipe 128, the schematic diagram of 130, in the present example embodiment, left reactant gases pipe 128 comprises two gas sources 502, gas source number is arbitrary to a great extent in the present invention, and the gas source that flue has less or more quantity will still fall within scope of the present invention.Gas source 502 connects corresponding flow director 504, and its effect is the flow regulating the gas entering left inlet mouth 136 from gas source 502.
As shown in Figure 5 B, sequentially show two vapor pipes 132,134, the vapor pipe 132 on the left side by pressure transmitter 506 (such as, pressure controller) input, the pressure of pressure transmitter 506 measurement of butterfly 508, and by existing electron feedback mechanism, control the pressure regulated at left reaction compartment 112 of described throttling valve 508.Then gas by circle 510 (such as, liquid nitrogen trap), then deliver to venting port 514 with rotary machine pump 512.
Assembly shown in figure utilizes the left side of independent reactant gases pipe 128,130 and independent vapor pipe 132 and 134 and the reaction compartment 112,114 on right side.Have these reaction compartments 112, the 114 independent advantages controlled.Between the reactant gases pipe 128,130 of Fig. 5 A and 5B and vapor pipe 132 and 134, be determined on a case-by-case basis.Such as, this reactant gases pipe 128,130 may have common gas source, or can have common rotating machinery pump at vapor pipe 132 and 134.In a particular embodiment, a shared reactant gases pipe and a shared vapor pipe can be enough to service two reaction compartments 112,114.
The various elements of CVD reactor 100 are that conventional material is formed substantially.Process pipe 108 and internal gas pipe 138,144 passable, such as, include but not limited to such as material quartz or aluminum oxide.Substrate holder 116,120 can comprise a kind of material but be not limited to such as, quartz, aluminum oxide, or metal.Adapter 124,126, two parallel guide rail 148, two guideway support 150, and can metal be comprised in Liang Ge adapter support section 152 but be not limited to, such as aluminium or stainless steel.Rubber element, as O type ring 412,420 can by high temperature elastomer, such as, Perfluoroelastomer.Flow director 504, throttling valve 508, the reactant gases pipe 128,130 that pump 512 grade is formed and vapor pipe 132 and 134 can from commercial supplier (such as MKS Instruments Inc.'s (Andover, originate in Massachusetts, the U.S.)).
The embodiment of the present invention uses CVD (Chemical Vapor Deposition) reactor 100 to carry out film forming, left substrate 118 is loaded left reaction compartment 112, and right substrate 122 loads right reaction compartment 114; Heating source 102 is heated to required temperature of reaction thus by the heating space 106 sliding into left substrate 118 and occurs in left substrate 118 to allow required film deposition.
Heating source 102 slides into right reaction compartment 114, passes into reactant gases and to right reaction compartment from right reactant gases pipe 130 with required flow velocity and pressure.Make right substrate 122 be heated to required temperature of reaction with the deposition of film in right substrate 122, cool in the left substrate 118 of left reaction compartment 112 simultaneously.Alternately realize film deposition and the cooling of two reaction compartments.Heating source 102 is sent to left reaction compartment 112 again, the film cooling of film deposition right substrate 122 simultaneously in left substrate 118.As implied above, at CVD reactor 100, left reactant gases pipe 128 and left bank tracheae 132 are for left reaction compartment 112, and right reactant gases pipe 130 and right vapor pipe 134 are for right reaction compartment 114.
By providing process pipe 108 and two reaction zones 112,114, it can be heated respectively by a heating source 102, realizes larger output.Arrange two reaction compartments by utilizing CVD (Chemical Vapor Deposition) reactor can carry out cooling substrate respectively simultaneously and carry out thin film deposition, and according to the moveable heating source of the present invention, solve fouling membrane and the problem of damage.
Should it is once more emphasized that, the above embodiment of the present invention is only exemplary.Other embodiments can use different component types and arrange for realizing described function.These numerous alternatives in the scope of claims will be apparent well-known to those skilled in the art.
Although the heating source 102 of CVD reactor 100 in the present embodiment utilizes the heating unit 104 of resistive heating, in alternate embodiment, several alternative source of heat energy can be utilized according to aspects of the present invention.These substituting sources include but not limited to radiation heating high-level radiation light source and electrical induction heating.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. a device for deposited film, is characterized in that, described device comprises:
Process pipe, described process pipe comprises the first reaction compartment and the second reaction compartment, and the second reaction compartment and the first reaction compartment are separated by isolation part makes gas not be conducted, and is all placed with substrate in each reaction compartment;
Heating source, described heating source comprises heating unit, and described heating unit defines hollow heating space, and described process pipe is through described heating space;
Guide rail, described heating source by described guide supporting, thus slides along the longitudinal axis of guide rail, in the first reaction compartment and the second reaction compartment conversion heating;
At least one reactant gases pipe, described reactant gases pipe can be introduced the first reactant gases and flow into the first reaction compartment, and introduces the second reactant gases and flow into the second reaction compartment; And at least one vapor pipe, described vapor pipe is from described first reaction compartment with from described second reaction compartment Exhaust Gas.
2. the device of deposited film according to claim 1, it is characterized in that: described device also comprises the adapter and adapter support portion that are connected with process pipe, described adapter is communicated with reactant gases pipe vapor pipe respectively, what described adapter was slided by adapter support portion is connected on guide rail, thus can hold the tubing of different lengths.
3. the device of deposited film according to claim 2, is characterized in that: described adapter comprises water cooling flange and speed reduction unit; Described speed reduction unit has left flange, right flange, upper flange and lower flange; Lower flange is used as the port of the inlet mouth of reactant gases pipe, and upper flange is used as the port of venting port; The right flange of water cooling flange and speed reduction unit is passed in the end of described process pipe; Described adapter also comprise be placed between water cooling flange and right flange O shape circle and bolt be used for fixing speed reduction unit and water cooling flange; The angular extrusion O shape circle that water cooling flange and right flange are formed and process pipe outer wall, form gas-tight seal between adapter and process pipe.
4. the device of deposited film according to claim 2, is characterized in that: described adapter support portion height adjustable thus can hold the tubing of different diameter.
5. the device of deposited film according to claim 1, is characterized in that: described reactant gases pipe and vapor pipe are two, independently controls the first reaction compartment and the second reaction compartment.
6. the device of deposited film according to claim 1, is characterized in that: described reactant gases pipe comprises gas source and flow director.
7. the device of deposited film according to claim 1, is characterized in that: described vapor pipe comprises the pressure transmitter, throttling valve, circle and the rotary machine pump that connect successively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410507630.8A CN105525271A (en) | 2014-09-28 | 2014-09-28 | Film deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410507630.8A CN105525271A (en) | 2014-09-28 | 2014-09-28 | Film deposition apparatus |
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| CN105525271A true CN105525271A (en) | 2016-04-27 |
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| CN201410507630.8A Pending CN105525271A (en) | 2014-09-28 | 2014-09-28 | Film deposition apparatus |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
| CN103510066A (en) * | 2012-06-21 | 2014-01-15 | 李雪松 | Dual-chamber reactor for chemical vapor deposition |
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2014
- 2014-09-28 CN CN201410507630.8A patent/CN105525271A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
| CN103510066A (en) * | 2012-06-21 | 2014-01-15 | 李雪松 | Dual-chamber reactor for chemical vapor deposition |
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Application publication date: 20160427 |