CN105518825A

CN105518825A - Multiple zone heater

Info

Publication number: CN105518825A
Application number: CN201480020826.2A
Authority: CN
Inventors: B·D·埃李奥特; F·巴尔马; A·G·埃利奥特; A·维伊特泽; D·G·雷克斯; R·E·舒斯特
Original assignee: Component Re Engineering Co Inc
Current assignee: Watlow Electric Manufacturing Co
Priority date: 2013-03-15
Filing date: 2014-03-14
Publication date: 2016-04-20
Anticipated expiration: 2034-03-14
Also published as: CN105518825B; EP2973659A1; KR102171734B1; TWI632589B; JP2016522881A; EP2973659A4; JP6382295B2; TWM644795U; KR20150132515A; TW201506989A

Abstract

A wafer chuck including a shaft having an axis and a plate joined to an end of the shaft. The plate can have a portion extending radially outwardly from the axis beyond the shaft. A temperature sensor can be disposed in the portion of the plate and an electrical lead can extend from the temperature sensor through the shaft for measuring the temperature of the plate in the vicinity of the temperature sensor during a semiconductor manufacturing process.

Description

Multizone heater

Technical field

The present invention relates to the heater used in semiconductor processes, and relate more specifically to that there is the heater of multiple thermal treatment zone and the thermocouple in order to detect these thermals treatment zone.

Background technology

In semiconductor fabrication, silicon substrate (silicon chip) accepts process at elevated temperatures, for the multiple different material of deposition.Temperature usually between 300 DEG C within the scope of 550 DEG C, but sometimes may be even higher up to 750 DEG C.In the layer of the material deposited on silicon chip surface " growth ".A variety of in these materials have the growth rate extremely responsive to temperature, and the variations in temperature therefore on silicon chip can affect the local growth speed of film, and cause along with film is at grown above silicon, film thickness changes.

It is desirable to the varied in thickness controlling deposit film.Sometimes, it is desirable at the film of silicon chip center thicker (as dome).Sometimes, it is desirable to the film thicker (as pit or recess) on edge.Sometimes, it is desirable to make film thickness thin (in the scope of tens of dust) as far as possible.

The most direct is placed on the heaters by silicon chip for controlling silicon temperature and controlling one of method of the thickness distribution of the film deposited thus.Specific in order to generate the power density " figure " of temperature required distribution on silicon chip by heater design is become to have, just can generate desirable film thickness distribution.The power density of heater below needs one or more positions of higher temperature to increase and reduces at one or more positions of the lower silicon temperature of needs on silicon chip.

Chip manufacturer wishes to obtain the ability running different disposal in same process chamber.For making the capital equipment of film growth very expensive (usual each process chamber is more than 100 ten thousand dollars), it is therefore desirable that make the use of required process chamber maximize and make the quantity of required process chamber minimize.The treatment of different temperature of different chemical product is used to run in same process chamber, to generate different films.These different films also can have different growth rates and temperature characterisitic.This just cause chip manufacturer wish to obtain change the heater in designated treatment room rapidly power density diagram to realize the ability of required film thickness distribution.

In addition, it is desirable to chip manufacturer and in multiple process chamber, accurately can run identical " formula " and the film producing film thickness distribution (and other character such as membrane stress, the refractive index etc. that can be affected by temperature) with coupling.Therefore, it is desirable to produce such heater, it can have highly repeatably power density diagram between each unit.

Heater can manufacture have by use in the heater many independently heater circuit change the ability of power density diagram.By changing the voltage and current being applied to different circuit, the power level at each position in wall scroll circuit just can be changed.Each position in these particular electrical circuit is referred to as " district (zone) ".By increasing voltage (and also increasing electric current when these heating elements are resistive heater thus) for designation area, the temperature in this district can be raised.On the contrary, when reducing voltage for a district, the temperature in this district can be reduced.By this way, different power density diagrams can be generated by the power changed for each district by identical heater.

At least two kinds of limiting factors can have influence on the ability that chip manufacturer effectively uses multizone heater.First limiting factor is that heater of the prior art only has a control thermocouple.Because within the center at present only allowing the position of thermocouple to be positioned at heating plate for the plate of heater and shaft design or the radius of about 1 inch being positioned at heater center, so a control thermocouple can only be used.Thermocouple is made up of metal that is incompatible with the processing environment of silicon chip and that therefore must keep apart with this environment.In addition, in order to the response faster of thermocouple (TC), it is preferably made to operate under atmospheric pressure environments instead of under the vacuum environment of exemplary process room.Therefore, thermocouple can only be arranged in the central hollow region be not connected with processing environment of heated mandrel.If exist be positioned at heated mandrel 2 inch diameters outside the thermal treatment zone, then can not by the installation of TC in this monitor and to help the temperature of this thermal treatment zone of control.

Solve this restriction by utilizing the power ratio of " controlled (slaved) " to control the thermal treatment zone be positioned at beyond heater middle section.This power ratio is set up with each other district with the power generating desirable power density diagram according to being applied to central area.The temperature of center-control thermocouple monitoring central area, and the power that (feedback based on center-control thermocouple) is applied to central area is undertaken regulating and being applied to all districts by the power ratio set up in advance subsequently.Such as, for dual zone heater, assuming that the Temperature Distribution needed for power generation that the power ratio being applied to outskirt and inner region is 1.2 to 1.0.Assuming that Heater Control System determines to need the voltage of 100VAC to realize suitable temperature by reading the temperature data that provided by center-control thermocouple.Utilize controlled proportional controlling means, thus the voltage of 120AVC is applied to outer heating zone and the voltage of 100VAC is applied to the interior thermal treatment zone.Thus by changing controlled ratio and regulating power density map.

This just causes the discussion to the second limiting factor.Heater of the prior art has the intrinsic resistance variations of embedded heater.Owing to needing high temperature and high pressure in the manufacture process of current ceramic heater, therefore achieved resistance tolerance can close to 50%.In other words, for the typical resistances (at ambient temperature, the material of heating element molybdenum that normally resistance increases along with the rising of operating temperature) in the scope of 1.8 ohm to 3.0 ohm of semiconductor grade ceramic heating element.

The problem that this change causes is: keep the repeatably power density diagram between each unit for the multizone heater controlled by controlled ratio method.For single district heater, resistance variations is not problem, and reason is that controlling thermocouple is used to monitor actual operating temperature, and correspondingly regulates the power level being supplied to heater.But if multizone heater, and the resistance variations of heating element can close to 50%, then controlledly can not to generate between each unit repeatably power density diagram than control method.

A kind of heater design is set up in requirement, it allows to install multiple control thermocouple, described multiple control thermocouple can be physically located in allow feedback and directly to control in the corresponding thermal treatment zone, and still keeps the processing environment in thermocouple and process chamber isolated.

Accompanying drawing explanation

Described hereinly be schematic accompanying drawing in many aspects and be only used to carry out diagram and be not to limit the scope of the present disclosure.

Fig. 1 is the view of the plate shaft device used in semiconductor processes according to certain embodiments of the invention.

Fig. 2 is the cutaway view according to the connecting portion between the plate of certain embodiments of the invention and axle.

Fig. 3 is the view according to the plate shaft device in the process chamber of certain embodiments of the invention.

Fig. 4 is the view of the heater assembly according to certain embodiments of the invention.

Fig. 5 is the schematic cross sectional views of the multizone heater according to certain embodiments of the invention.

Fig. 6 is the schematic, bottom view of the multizone heater according to certain embodiments of the invention.

Fig. 7 is the schematic diagram of the cover plate connected according to the embodiment of the present invention.

Fig. 8 is the schematic diagram of the cover plate according to certain embodiments of the invention.

Fig. 9 is the perspective view of the heater according to certain embodiments of the invention.

Figure 10 is the perspective exploded view of the heater according to certain embodiments of the invention.

Figure 11 is the schematic cross sectional views with multiple-plate heater according to certain embodiments of the invention.

Figure 12 is the multiple-plate amplification partial sectional view according to certain embodiments of the invention.

Figure 13 is the schematic cross sectional views with the heater of multiple thermal treatment zone and thermocouple according to certain embodiments of the invention.

Figure 14 is the amplification view of join domain of the plate intercepted along the line 14-14 in Figure 13 according to certain embodiments of the invention and axle.

Figure 15 is the vertical view of the central bush along the line 15-15 intercepting in Figure 14 according to certain embodiments of the invention.

Figure 16 is the partial sectional view of each side of the central bush along the line 16-16 intercepting in Figure 15 illustrated according to certain embodiments of the invention.

Figure 17 is the map along multiple thermals treatment zone that the line 17-17 in Figure 13 intercepts according to some embodiment of the present invention.

Embodiment

In one embodiment of the invention, provide the multizone heater with multiple thermocouple, to make it possible to the temperature of monitoring different heating district independently.Independently thermocouple can make the axle of their lead-in wire from heater in passage or recess separate, connection handling can be utilized to come closed described passage or recess, and described connection handling causes being suitable for bearing the airtight sealing of the internal atmosphere of axle in process chamber and process chemicals.Independently thermocouple can make to separate from the axle of heater in the space of their lead-in wire between flaggy, recess or chamber, and connection handling can be utilized to connect each flaggy, and described connection handling causes being suitable for bearing the airtight sealing of the internal atmosphere of axle in process chamber and process chemicals.Thermocouple and lead-in wire thereof can be encapsulated by connection handling, in described connection handling, utilize any suitable connecting material (such as aluminium) can be soldered to the second flaggy or heating plate as the first flaggy of backplane level or channel cover.

Fig. 1 illustrates the exemplary plate shaft device 100 such as heater used in semiconductor processes.In certain aspects, plate shaft device 100 is made up of pottery such as aluminium nitride.Heater has axle 101, described axle 101 correspondingly supporting bracket 102.Plate 102 has top surface 103.Axle 101 can be the cylindrical shell of hollow.Plate 102 can be square position.Other subassembly can be possessed.In some process of the present invention, plate 102 can be made separately in initial treatment, and described initial treatment relates to process stove, in described process stove, form ceramic wafer.In certain embodiments, can utilize low temperature airtightness connection handling as described below that plate is connected to axle.

Fig. 2 shows cutaway view, and in described cutaway view, the first ceramic member (can be ceramic shaft 191) such as can be connected to the second ceramic member, and described second ceramic member such as can be made up of identical or different materials and can be ceramic wafer 192.Can comprise connecting material such as brazing layer 190, described connecting material can be selected and can be transported to connecting portion according to method described herein from the combination of brazing layer material described herein.In certain aspects, plate can be aluminium nitride and axle can be aluminium nitride, zirconia, aluminium or other pottery.In certain aspects, desirable can be use the shaft material with low conductive heat transfer coefficient.

About the connecting portion shown in Fig. 2, axle 191 can be located so that it abuts plate, and wherein, only brazing layer is between the surface 193 and the surface 194 of plate of connected surface such as axle.The contact surface 194 of plate 192 can be arranged in the recess 195 of plate.In order to clarity, be exaggerated the thickness of connecting portion.In the exemplary embodiment, plate and axle all can be made up of aluminium nitride and use liquid-phase sintering process all in advance and formed separately.The diameter of plate can be about 9-13 inch and thickness is 0.5-0.75 inch.Axle can be the cylindrical shell of hollow, its length be 5-10 inch and wall thickness is 0.1 inch and external diameter in the scope of 1-3 inch.Plate can have the recess of the outer surface of the first end being suitable for receiving axes.

As shown in Figure 3, the brazing material of the connecting portion that heater or other device use can bridge joint between two different atmosphere, all can there is prominent question for existing brazing material in described two different atmosphere.On the outer surface 207 of the semiconductor processing equipment such as heater 205 of semi-conductor silicon chip folder, brazing material and must use environment 201 existing in the semiconductor process chamber 200 of heater 205 compatible with ongoing process.Environment 201 existing in process chamber 200 can comprise fluorine chemical.Heater 205 can have substrate 206, and described substrate 206 is fixed to the top surface of plate 203, supports described plate 203 by axle 204.On the inner surface 208 of heater 205, brazing layer material must be compatible from different atmosphere 202, and described atmosphere 202 can be oxygen-containing atmosphere.The existing brazing material used together with pottery still can not meet this two standards.Such as, comprising copper, silver or golden soldering element can disturb with the lattice structure of the silicon chip processed, and therefore inapplicable.But when heating plate is connected to heated mandrel by brazed joints, the inside of axle can experience high temperature usually, and intracardiac in quill shaft there is oxygen-containing atmosphere.Brazed joints the part being exposed to this atmosphere will be oxidized, and can be oxidized in connecting portion, cause the air-tightness at connecting portion place to lose efficacy.Except structure attachment, the connecting portion between the axle of these devices used in semiconductor fabrication and plate must be bubble-tight in multiple (even if not all, being also major part) application.

Fig. 4 shows an example of the explanatory view of the heater tubing string be applied in semiconductor process chamber.Can be that the heater 300 of ceramic heater can comprise radio-frequency antenna 310, heating element 320, axle 330, plate 340 and mounting flange 350.

In some embodiments of the invention, as shown in Figure 5, the equipment be applied in manufacture of semiconductor can be provided for, such as wafer chuck or heater 500.Described equipment can comprise elongated shaft 516, and described elongated shaft 516 can be cylinder and the central longitudinal axis 519 being provided with the first and second relative ends 517,518 and extending between both ends 517,518.Path or centre bore 504 extend through axle 516 from first end 517 to the second end 518.Plate 521 can be connected to the first end 517 of axle 516.It is such as cylindrical and can centered by axis 519 that plate 521 can have any suitable shape.In one embodiment, the radius of plate 521 is greater than the radius of axle 516.In one embodiment, plate 521 has part 522 such as annular section, and described part 522 extends radially outward beyond axle 516 from axis 519.Each in axle 516 and plate 521 all can be made up of any suitable material such as ceramic material, and axle and plate are made by aluminium nitride in one embodiment.Plate 521 can be provided with multiple thermal treatment zone, and each thermal treatment zone all has at least one heater wherein.In one embodiment, plate 521 has: first or the central thermal treatment zone 526, described first or the central thermal treatment zone 526 can such as centered by axis 519; Second or the thermal treatment zone, middle part 527 and the 3rd or edge heating district 528.When observing in plan view, each in the thermal treatment zone all can have any suitable shape, and in one embodiment, and central area 526 is in plan view for circular and middle region 527 and marginal zone 528 are all annular in plan view.The thermal treatment zone can overlapping (such as shown in Figure 5), or do not overlap each other and be mutually radially spaced.

Equipment 500 can be provided with multiple temperature sensor, and such as each thermal treatment zone arranges at least one temperature sensor.In one embodiment, first temperature sensor 505 is arranged near the central thermal treatment zone 526 in plate 521 or adjoins the central thermal treatment zone 526, second temperature sensor 506 is arranged near the thermal treatment zone, middle part 527 in plate or adjoins the thermal treatment zone 527, middle part, and three-temperature sensor 507 is arranged near the edge heating district 526 in plate or the edge-adjacent thermal treatment zone 526.In one embodiment, each in temperature sensor is arranged in the radial center place of the corresponding thermal treatment zone, but temperature sensor is also in scope of the present invention relative to other location of the corresponding thermal treatment zone.In one embodiment, second and three-temperature sensor 506,507 in each be arranged in the part 522 of plate 521.In one embodiment, temperature sensor 505,506,507 is radially spaced mutually, and in one embodiment, second temperature sensor 506 and the first temperature sensor 505 spaced apart radially outwardly, and three-temperature sensor 507 and the second temperature sensor 506 spaced apart radially outwardly.Each in temperature sensor can be any suitable type, and in one embodiment, each in temperature sensor is thermocouple.

Electrical lead extends to the first end 517 of axle 516 from each temperature sensor and passes the second end 518 that centre bore 504 extends to axle.In this respect, an end electric coupling of the first electrical lead 531 or be electrically connected to first sensor 505, an end electric coupling of the second electrical lead 532 or be electrically connected to the second transducer 506, and an end electric coupling of the 3rd electrical lead 533 or be electrically connected to the 3rd transducer 507.Each in lead-in wire all extends through axle 516, the second end 518 place of axle can be connected on and allow the temperature of monitoring board 521 independently, the more specifically temperature near respective temperature sensor of monitoring board and the temperature of monitoring thus near the corresponding thermal treatment zone 526,527,528.

Can form plate 516 in any suitable manner, and in one embodiment, plate is made up of multilayer such as multiple plane layer.In one embodiment, first flaggy of equipment 500 or cover plate 501 can be incorporated into the second flaggy of equipment 500 or the dorsal part of heating plate 502, thus covering hollow region or recess 503, described hollow region or recess 503 can be connected with heated mandrel hollow core 504 or be communicated with.Recess can as the conduit for temperature sensor wires 531-533, and one or more lead-in wire in 531 to 533 can be arranged in each recess or passage.The hollow region using radial feeder, recess or passage to be such as capped just allows to control thermocouple separately, for use in the local temperature of directly monitoring the such as thermal treatment zone 526-528 place, each thermal treatment zone in multizone heater 500.Thermocouple 505,506,507 can be arranged in corresponding thermocouple sheath 508,509,510, and described thermocouple sheath 508,509,510 is arranged in each independent thermal treatment zone.Thermocouple can be installed in these sleeve pipes, and described sleeve pipe is arranged in capped hollow region or passage 503.In certain embodiments, the machining of plate can be performed in passage 503, to allow more in depth mounting temperature sensor or thermocouple 505-507.Can use ceramic cover plate 501 cover heating galvanic couple subsequently, described ceramic cover plate 501 is positioned at heating plate dorsal part and between heating plate and axle.Heating plate 502, hollow region cover plate 501 and heated mandrel 516 can combine subsequently.Thermocouple and processing environment are just kept apart by this, and the direct feedback providing the temperature of each thermal treatment zone is for conventional control.In the design of some heaters, during the processing procedure of plate, heater is fully embedded in plate.This process may need high temperature and high punching press contact force during formation plate, and described high temperature can be in the scope of 1700 DEG C.Although heating element self can be suitable for bearing such process, thermocouple 505-507 and the lead-in wire 531-533 for thermocouple can not bear this process, and described lead-in wire 531 to 533 can be made by because of Cornell alloy (Inconel).When thermocouple 531-533 being installed after the final sintering and punching press of ceramic wafer 521, must correspondingly protecting thermocouple to avoid and will the process chemical contact of heater 500 be exposed between heater 500 operating period.Use the temperature with the region of independent heater of multiple thermocouple monitoring plate 521, to allow the temperature in these regions based on actual temperature reading control board.

Thermocouple sheath can stretch into the height arriving heating element in plate 521.In certain embodiments, heating element can have open area, can not stretch into heating element downwards but arrive the same depth in a region, there is gap or space in the heating element in this region to make thermocouple sheath.In certain embodiments, after being processed into by heating plate and having multi-portion heating element wherein, hollow region 503 and thermocouple sheath can be machined into heating plate.When manufacturing heating plate, multi-portion heating element can be in ceramic heating plate.Utilize low temperature connection handling as described herein, hollow region cover plate 502 can be connected to heating plate 501, and is also connected to a part or the end 517 of axle 516 in certain aspects.

Fig. 6 is the upward view of the plate such as plate 521 in semiconductor processes wafer chuck 500, and wherein, axle such as axle 516 attaches to this.Recess, groove or hollow channel region 503 extend radially outwardly from the part being positioned at the central authorities of quill shaft 516 of plate.One or more thermocouple sheath can be positioned at this hollow channel region 503, to allow temperature sensor or thermocouple to be inserted into the corresponding heating element be arranged in the corresponding thermal treatment zone (such as otherwise the thermal treatment zone, middle part 527 that can not directly monitor and edge heating district 528).

Fig. 7 illustrates the cutaway view of part with recess, space or hollow region 503 and cover plate 501 according to the heating plate 502 of some embodiment of the present invention, and described heating plate 502 is included as the parts such as the heater that uses in manufacture of semiconductor or wafer chuck.Cover plate 501 can be suitable for being assemblied in slit, recess or the opening be located at bottom heating plate.Groove, passage, recess or slit are arranged at least one in heating plate 502 and cover plate 503.In one embodiment, the recess shown in cutaway view of Fig. 7 or passage 503 can be positioned at the below of slit and be suitable for electrical lead or connector 520 to be switched to axle center from temperature sensor or thermocouple.Especially, suitable temperature sensor or thermocouple are arranged in plate by the external diameter radially beyond axle, and therefore not overlapping with axle.Because passage 503 may experience atmosphere intracardiac in axle, oxidized so possibly, so connector 521 can be such as at any one articulamentum disclosed herein, cover plate 501 is attached to heating plate 502 with the different atmosphere of bridge joint by it.This atmosphere in passage can allow the thermocouple in passage area to realize obviously better thermocouple function.The opposite side of connector will experience the atmosphere in process chamber, and described atmosphere can comprise corrosive process gases such as fluorine-containing chemical.Suitable method of attachment obtains the air-tightness connector of the compatible connector of the atmosphere different from these such as type disclosed herein.In Fig. 7, the electrical lead 520 of graphic equipment or heater extends through the heating plate 502 in recess, passage or path, described recess, passage or path and use the environment hermetic seal isolation of semiconductor process chamber of this equipment wherein.

Fig. 8 illustrates the cutaway view of a part for the first flaggy or heating plate 502, described first flaggy or heating plate 502 are included as such as being applied in a part for heater in manufacture of semiconductor or wafer chuck, wherein, the second flaggy or hollow cover plate 530 are suitable for the bottom being connected to heating plate 502.Heating plate 502 and cover plate 530 can form the plate such as plate 521 of heater.Hollow cover plate 530 can cover the thermocouple sheath in the bottom of electrical lead or thermocouple coupling line 520 and heating plate.Heating plate 502 is provided with groove, passage, recess or slit with at least one in the relative surface of cover plate 530, for making the environment of the recess of formation, passage, recess or slit 545 and semiconductor process chamber hermetic seal isolation and be suitable for use as the electrical lead that is coupled to temperature sensor or thermocouple or wiring 520 conduit used, described temperature sensor or thermocouple be arranged in heating plate from the outward extending part of the Axial and radial of heater.Can such as cover plate 530 can be attached to heating plate 502 and form the airtight sealing between them by any one the suitable articulamentum in articulamentum disclosed herein or connecting portion 546.In the graphic embodiment of Fig. 8 institute, passage 545 is positioned at cover plate 530 or extends through cover plate 530, instead of is positioned at heating plate or structure 502 or extends through heating plate or structure 502.

Fig. 9 and Figure 10 carrys out the heater 550 of diagram according to some embodiment of the present invention with perspective view and partial, exploded perspective view respectively.The Reference numeral that heater 550 is similar and identical with above-mentioned heater is used to describe the same parts in this heater 550.Be provided with hollow cover plate 551 and described hollow cover plate 551 can have continuous print circulus or ring-shaped article 552, described continuous print circulus or ring-shaped article 552 are suitable for being arranged between the bottom of axle 516 and heating plate 502.In one embodiment, cover plate 551 is formed as one by identical material with circulus or ring-shaped article 552, therefore not different parts.Heating plate 502 is provided with groove, passage, recess or slit with at least one in the relative surface of cover plate 551, for the formation of the environment with semiconductor process chamber hermetic seal isolation and being suitable for use as be coupled to electrical lead 532,533 conduits used of temperature sensor or thermocouple, described temperature sensor or thermocouple be arranged in plate 521 from the part that the axle 516 of heater 550 extends radially outwardly.In heater 550, and be positioned at heating plate or heating arrangement 502 or extend through heating plate or heating arrangement 502 on the contrary, be positioned at cover plate 551 for the groove of temperature sensor wires, passage, recess or slit or extend through cover plate 551.Hollow cover plate 551 to allow thermocouple lead or electric wire 532,533 from the bottom of plate 521, the routed outside of the circumference of axle 526 is to the center of axle.In certain embodiments, can connect heating plate 502 simultaneously, have the hollow cover plate 551 of circulus 552 and axle 516 in a heating operation, these parts are brazed together by a described heating operation.In this respect, can be used in connection handling disclosed herein and layer any one.

In some embodiments of the invention, as the expanded view from Figure 11, plate shaft device 556 such as heater or wafer chuck have board component or plate 557 and axle 558.Board component 557 has layer 561,562,563, and described layer 561,562,563 can be fully sintered ceramic layer before they are assembled into board component 557.Ground floor or top board layer 561 cover the second layer or intermediate layer 562, and wherein electrode layer 564 is between top board layer 561 and intermediate layer 562.Intermediate layer 562 covers bottom layer 563, and wherein, zone of heating 565 is between intermediate layer 562 and bottom layer 563.

In certain embodiments, thermocouple can be arranged between flaggy, to monitor the temperature at different parts place.Multi-layer sheet assembly can allow the region on one or more the one or more surfaces in operation panel, to make it possible to the coupling completing surface after final sintered ceramic flaggy.In addition, this operation of effects on surface also allows by assembling parts in the surface of flaggy, and is assembled in the space between each flaggy.

The layer 561,562,563 of board component 557 can be made up of pottery such as aluminium nitride when heater, or is made up of other material (comprising aluminium oxide, doped aluminium, aluminium nitride, doped aluminum nitride, beryllium oxide, doping beryllium oxide and other material) when electrostatic chuck.Before they being incorporated in board component 557, the layer 561,562,563 forming the board component of substrate support can be fully sintered pottery.Such as, when plate to be in the special furnace of high temperature height contact or by band casting or spark plasma sintering or other method disposable plates time, can fully sintered each layer 561,562,563, be machined into final size as required according to their purposes and their positions in the heap of board component subsequently.Soldering process can be used subsequently flaggy 561,562,563 and articulamentum 567 to be linked together, and this allows when not needing the last assembling completing board component 557 when being equipped with the professional high temperature furnace for the drift of high contact stress.

In axle or the embodiment of the parts of final assembly, such as when plate shaft device, connection handling step board component 557 being connected to axle 558 also can when not needing to use soldering process when being equipped with the professional high temperature furnace for the drift of high contact stress.In certain embodiments, process flaggy and board component being connected to axle can be completed in synchronous treatment step.Axle 558 can utilize articulamentum 568 to be connected to board component 557.Articulamentum 568 can be the soldering element identical with articulamentum 567 in certain embodiments.

Improving one's methods to relate to board component layer be connected in final board component for the manufacture of plate or board component, and without using extra process consuming time of high temperature and high contact and the step of costliness, described above and hereafter will describe the method in further detail.The method for welding for connecting pottery can be utilized to connect flaggy according to embodiments of the invention.Example for the method for welding linked together by the first and second ceramic members can comprise the following steps: the first and second ceramic member brazing layers (being selected from the group be made up of the aluminum and its alloy be arranged between the first and second ceramic members) to link together, heating soldering layer at least 800 DEG C temperature, then brazing layer is cooled to temperature lower than its fusion point, brazing layer is hardened and forms bubble-tight sealing, the first component is connected to second component.The various geometries of brazed joints can be realized according to method described herein.

In certain embodiments of the present invention, the board component with multilayer can be proposed, make to there is strutting piece between flaggy, to make when adding thermal connection layer and light pressure is axially applied to plate, there is axial compression slightly, make articulamentum appropriateness thinning, until the strutting piece on one block of plate contacts the plate adjoined.In certain aspects, this allows the thickness in not only control connection portion, and can also the size of control board assembly and tolerance.Such as, by can set the depth of parallelism of the structure of various plate about the mechanical tolerance of flaggy, and this aspect can be maintained during utilizing the connection handling of strutting piece.In certain embodiments, use the circumference outer ring-like part on a flaggy can realize the size Control after connecting, described circumference outer ring-like part covers the interior ring-shaped article in adjacent courses, to provide axial consistency.In certain embodiments, one in outer ring-like part or interior ring-shaped article can also, along the axial direction contact adjacent plate perpendicular to plate, make also can realize Position Control along this axial direction.Axial location controls the final thickness can also determining the articulamentum between two pieces of adjacent plate thus.

In certain embodiments of the present invention, the material of the electrode between layer can be identical with the material of articulamentum and can play a role with the dual identity of articulamentum and electrode.Such as, the region previously occupied by the electrode in electrostatic chuck can change into and being occupied by articulamentum, described articulamentum has the dual-use function as electrode and articulamentum, when being used as electrode, it is for such as providing electrostatic clamp power, when being used as articulamentum, it connects two boards, and articulamentum is between this two boards.In this embodiment, labyrinth portion (labyrinth) can be positioned at the peripheral of the plate that two pieces connect, and is substantially minimized to make the sight line from the region outside plate to charged electrode and path.

Figure 12 illustrates the partial sectional view of the board component according to some embodiment of the present invention.Board component is multi-layer sheet assembly, and wherein heater and electrode are between different layers.Each layer is connected by soldering element and by the final position of strutting piece 578,579 decision plate on the direction of the plane at the primary flat place perpendicular to plate on plate.

Ground floor or top board layer 571 cover the second layer or lower flaggy 572.Lower flaggy 572 overlays third layer or backplane level 573.Although illustrate in fig. 12, there are three flaggies, can according to the flaggy needing use varying number of application-specific.Top board layer 571 utilizes multi-functional articulamentum 576 and is connected to lower flaggy 572.Multi-functional articulamentum 576 is suitable for top board layer 571 being connected to lower flaggy 572 and being suitable for as electrode.This electrode can be articulamentum, and described articulamentum is disk substantially, and wherein, connecting material is also used as electrode.As shown in figure 12, strutting piece 578 is suitable for along the vertical direction perpendicular to flaggy primary flat for the position of lower flaggy 572 controlroof layer 571.The edge of top board layer 571 is suitable for along the border 577 being positioned at their circumference places between two boards to block sight line.The thickness of articulamentum 576 can become appropriate size, and to make before the heating and Connection Step of board component, articulamentum 576 just contacts with lower flaggy 572 with top board layer 571.

Lower flaggy 572 covers backplane level 573.Heater 574 is between lower flaggy 572 and backplane level 573.In this respect, recess, chamber or chamber are arranged at least one in the apparent surface of lower flaggy 572 and backplane level 573, to form recess for receiving heater 574, chamber or chamber 580.In one embodiment, as shown in figure 12, recess or chamber 580 are formed in the upper surface of backplane level 573, for reception heater 574.Recess 580 can have any suitable size and dimension and can be such as circular when observing with plane graph, to form columniform recess.Lower flaggy 572 is connected to backplane level 573 by articulamentum 575.Articulamentum 575 can be the annular ring-shaped article being positioned at flaggy circumference.Strutting piece 579 is suitable for controlling the vertical direction of lower flaggy 572 along the primary flat perpendicular to flaggy relative to the position of backplane level 573.During the Connection Step of board component, parts as shown in figure 12 can be assembled in advance, use process described herein to connect this plate pre-assembly, to form complete board component subsequently.In certain embodiments, this plate pre-assembly can also fit together in advance with axle and axle articulamentum, to make it possible to connect complete plate shaft device in single heat treated.This single heat treated can not need high temperature furnace or have the high temperature furnace being suitable for the drift providing high contact stress.In addition, in certain embodiments, complete plate shaft assembly without any need for the mechanical processing steps after connection, and still can meet the tolerance to this device in the actual use of manufacture of semiconductor.

In certain embodiments, top board layer and backplane level are aluminium nitride.In certain embodiments, articulamentum is aluminium.The example of connection handling and material is discussed hereinafter.

Figure 13 is the cutaway view of plate shaft device 600, and described plate shaft device 600 can be heater, wafer chuck, pedestal or pedestal, and wherein, multiple thermal treatment zone and multiple thermocouple use the multi-layer sheet 601 according to some embodiment of the present invention.Provide the elongated shaft of the longitudinal axis 643 that there is first end 641 and relative the second end 642 and extend between end 641,642.The first end 641 of axle 602 can pass through the bottom centre that any suitable device (being included in those devices disclosed herein) is connected to plate 601.In these embodiments, the air-tightness articulamentum being suitable for bearing corrosion treatment chemicals is equally used to can be used in adjacent panels to link together, to allow temperature sensor to be inserted in the part 605 of plate 601, described part 605 extends radially outwardly from the region that the inside 603 of axle 602 surrounds and opens with the corrosion treatment gas barrier that may be stood by heater.Suitable lifting pin-and-hole or opening 630 can be arranged in plate 601, such as, as shown in figure 13.

In certain embodiments, use multi-layer sheet to allow close to the space between each layer, in described space, thermocouple can be placed into otherwise cannot carry out in the region of monitoring.Such as, in the plate shaft device 600 such as shown in Figure 13, all power and monitoring are usually all undertaken connecting up by the hollow centre of axle 602 or central corridor 603 and left process chamber via room feedthrough.In the device of prior art, wherein, whole ceramic wafer shaft device by thermal sintering together, only can embed thermocouple and make telemetering equipment be arranged in the region of quill shaft central authorities along the Free Region that quill shaft connects up downwards.Such as, can use and be suitable for holing in the bottom of plate from the long drill bit quill shaft mediad.Thermocouple can be inserted in this hole and only for monitoring the temperature of the plate in this middle section subsequently.The limitation can installing the position of thermocouple eliminates the temperature that monitoring drops on the position outside hollow mandrel interior.

In certain embodiments of the present invention, central bush 604 may be used for auxiliary by the inner space between flaggy and the atmosphere seal isolation that may reside in axle.In such embodiments, central bush 604 can be used as from the middle body of axle 602 to flaggy the feedthrough of inner space.

In certain embodiments, the plate 601 of heater 600 can be assembled into by three flaggies.Every one deck in flaggy can be all fully sintered pottery such as aluminium nitride.Before being assembled into multi-layer sheet assembly, the every one deck in flaggy can machining be all finished product or the size close to finished product in advance.Ground floor or top cover sheet 612 can cover the second layer or middle part flaggy 611, and the described second layer or middle part flaggy 611 correspondingly can overlays third layer or bottom cover sheets 610.Every one deck in flaggy can be all cylindric, and in one embodiment, the every one deck in flaggy all has identical lateral dimension or diameter, the lateral dimension of described lateral dimension or diameter and plate 601 or equal diameters.The circumference of intermediate laminae can utilize articulamentum 614 to be connected to backplane level 610.Metal level 613 between top board layer 612 and intermediate laminae 611 can be used as RF layer, and is used as the articulamentum between these flaggies.Plate 601 has the part 605 extending radially outward beyond axle 602 from axis 643.

One or more heating element is provided with between middle part flaggy 611 and lower flaggy 610.Middle part flaggy 611 can be suitable for receiving heating element, makes heating element 621 be arranged in the groove 620 of the bottom of middle part flaggy 611.The example of visible multi-portion heating component placement in fig. 17.For six districts altogether, heating element is divided into three radial portions, and each district in described three radial portions all has Liang Geban district.In this respect, plate 602 comprises: the central thermal treatment zone 647, and the described central thermal treatment zone 647 can be annular and be divided into first and second central half district 647a, 647b; The thermal treatment zone 648, middle part, the thermal treatment zone, described middle part 648 can be annular and half district 648a, 648b in the middle part of being divided into first and second; With edge heating district 649, described edge heating district 649 can be annular and be divided into first and second edge half district 649a, 649b.Each in these halfth districts can be all semi-circular.The central authorities thermal treatment zone 647 can centered by axis 643, the thermal treatment zone, middle part can with axis 643 and the central thermal treatment zone 647 spaced apart radially outwardly, and edge heating district can with axis and the thermal treatment zone, middle part spaced apart radially outwardly.Two in radial portion namely the thermal treatment zone 648, middle part and edge heating district 649 can be arranged in plate 601 part 695 and outside the circumference being positioned at the inside of quill shaft completely.Heating element 621 can be made up of molybdenum, and can be encapsulated in groove with AIN packed mixture 622.Feed line 646 for heating element 621 can launch from central bush, to deliver power to each heater circuit.

In one embodiment, such as shown in Figure 17, at least one first temperature sensor 651 is arranged near the central thermal treatment zone 647 in plate 601 or adjoins the described central thermal treatment zone 647, at least one second temperature sensor 652 is arranged near the thermal treatment zone, middle part in plate 648 or adjoins the thermal treatment zone, described middle part 648, and near at least one three-temperature sensor 653 is arranged in plate edge heating the district 649 or edge-adjacent thermal treatment zone 649.All be in scope of the present invention relative to any appropriate ways of corresponding heating region location temperature sensor.In one embodiment, second and three-temperature sensor 652,653 in each be arranged in the part 605 of plate 601.Therefore, the temperature sensor being arranged in the thermal treatment zone 648,649 being suitable for providing temperature monitoring is positioned in plate with the radial distance of the inside radius being greater than axle 602.In one embodiment, temperature sensor 651,652,653 is radially spaced mutually, and each second temperature sensor 652 is all spaced apart radially outwardly with at least one first temperature sensor 651 in one embodiment, each three-temperature sensor 653 is spaced apart radially outwardly with at least one second temperature sensor 652.Each in temperature sensor can be all any suitable type, and in one embodiment, each in temperature sensor is all thermocouples.

Electrical lead 661 from each temperature sensor 651 to 653 extend to axle 601 first end 641 and by the second end 642 of centre bore 603 to axle.Each root in lead-in wire 661 all extends through axle 601, the second end 642 of axle can be received and allow the temperature of independent monitoring board 601, more specifically, and the temperature near the corresponding thermal treatment zone 647,648,649 of monitoring board.

In the embodiment such as shown in Figure 13 to 16, the lower surface of middle part flaggy 611 can be provided with different parts.In certain aspects, one or more recess, passage, groove or slit 662 can be machined in the surface for installing heating element 621 and electrical lead 661.Such a or multiple recess can comprise single chamber, and described chamber can be such as cylindrical and in one embodiment centered by axis 643.Can in this surface drilling bore hole be used as thermocouple sheath, for installing thermocouple 651 to 653.After this machining, can install and encapsulate heating element 621.In certain embodiments, heating element can be place molybdenum wire in operation.In certain embodiments, heating element can use thick film deposition to deposit in groove.Can also install and encapsulate thermocouple 651 to 653.Heating element can be attached to feed line 646, and described feed line 646 can be bus.In use entreat in the embodiment of lining, feed line 646 and thermocouple lead 661 can be connected up by central bush.Such as can assemble multilayer sheetpile 601 in an inverted manner, wherein, all elements comprising brazing layer are all assembled in pre-assembly, then described pre-assembly are processed into final complete heater assembly.Utilize bubble-tight all parts that are tightly connected according to soldering processes described herein, described bubble-tight sealing is suitable for the atmosphere supported to bear while semiconductor manufacturing heater and experience, and described atmosphere can comprise oxygen-containing atmosphere and fluorine chemical.

When making the lead-in wire thermocouple lead 661 such as had because of alloy outside, Cornell be connected up by central bush 604, these lead-in wires can by central bush but also for soldering component seal.Such as, lead-in wire can by the hole with countersunk in central bush, and cylinder soldering element can be placed on around lead-in wire before soldering processes.Central bush 60 also allows the inner space airtight sealing of the interior board space between middle part flaggy 611 and backplane level 610 and axle to isolate.As shown in figure 14, articulamentum 615 may be used for the bottom of axle and backplane level 610 to keep apart, and another articulamentum 616 may be used for the upper surface of central bush 604 with backplane level 610 to keep apart.In certain embodiments, when heating whole heater assembly in a vacuum to connect all different surfaces of various articulamentum to be attached during soldering processes, board space in vacuum condition lower seal will be sealed in bubble-tight.In certain aspects, by being provided with flaggy in thermocouple, the temperature heat in the region made better outside thermocouple and the region being provided with thermocouple is isolated.

Figure 15 and Figure 16 illustrates middle part lining 604 respectively in vertical view and partial sectional view.Central bush can be used as sealed feed-through, described sealed feed-through by the middle section of axle and between middle part flaggy 611 and backplane level 610 in board space keep apart.The lead-in wire 646 and the thermocouple lead 661 that supply power to heater can be connected up by central bush and seal with brazing material in same soldering treatment step, and described soldering treatment step makes other component connection and seals other parts.

Figure 17 illustrates multi-portion heating element such as heater 600, as in some embodiment finding of the present invention.For six thermals treatment zone 647a, 647b, 648a, 648b, 649a, 649b altogether, heating element is divided into three radial portions 647,648,649 in plate 601, as shown in the plane graph in Figure 17, each in described three radial zones 647,648,649 all has Liang Geban district.Two in radial portion such as, and the thermal treatment zone, middle part 648 and edge heating district 649 are arranged in plate portion 605 and are positioned at completely outside the circumference of the inside of quill shaft 602.In one embodiment, at least the first temperature sensor or thermocouple 651 are arranged in plate 601 for each central thermal treatment zone 647a, 647b; At least the second temperature sensor or thermocouple 652 are arranged on for the thermal treatment zone, each middle part 648a, 648b in plate 601, and at least three-temperature sensor or thermocouple 653 are arranged in plate 601 for each edge heating district 649a, 649b.In one embodiment, when observing with plane graph, temperature sensor is arranged in the scope of its corresponding thermal treatment zone 647a, 647b, 648a, 648b, 649a, 649b, as shown in figure 17.In one embodiment, the thermal treatment zone in plate 601 is substantially plane and defines such region when observing with plane graph, at least one temperature sensor about this thermal treatment zone is positioned at the region of this thermal treatment zone, or be arranged in the thermal treatment zone plane or along axis 643 and this plane spaced-apart.By this way, temperature sensor is positioned near the thermal treatment zone.In one embodiment, each in the thermal treatment zone in plate 601 is plane and is basically perpendicular to axis 643 to extend substantially.Should be understood that, can whole or a part of so in set temperature transducer 651 to 653.

Control connection material is depended on relative to the wetting of ceramic member to be connected and flowing according to the method for attachment of some embodiment of the present invention.In certain embodiments, in connection handling, oxygen is not had to allow suitably to soak under the prerequisite of the reaction of the material in join domain that do not change.Soak connecting material when suitable and when making it flow, the connecting portion of airtight sealing can be obtained with relatively low temperature.In certain embodiments of the present invention, before connection handling, in the region of connecting portion, complete the metallization in advance of pottery.

In some application of end product using the pottery connected, the intensity of connecting portion may not be crucial design factor.In some applications, the air-tightness of connecting portion may be needed, to allow to separate the atmosphere on any side of connecting portion.And the composition of connecting material may be very important, with can survive chemical product, the end product of ceramic component may be exposed to described chemicals.Connecting material may need survive chemical product, otherwise described chemicals may cause connecting portion to be degenerated, and damages bubble-tight sealing.Connecting material may also need to be such material type, and described material can not the post-processed supported by final ceramic device of negative interference.

In some embodiments of the invention, the ceramic component of connection is made up of pottery such as aluminium nitride.Other material such as aluminium, silicon nitride, carborundum or beryllium oxide can be used.In certain aspects, the first ceramic member can be silicon nitride and the second ceramic member can be aluminium nitride, zirconia, zirconia or other pottery.In some present treatment, first the parts of the ceramic component of connection can be made separately in initial treatment, and described initial treatment relates to process stove, in described process stove, form first and second.In certain embodiments, recess can be included in in matching parts, and this allows another matching parts to be positioned at recess.

In certain embodiments, connecting portion can comprise multiple strutting piece, and described strutting piece is suitable for brazing layer thickness minimally.In certain embodiments, one of ceramic member such as axle can adopt the multiple back shaft on the end of the axle that will be connected to plate or cover multiple back shafts that will be connected on the surface of plate.Back shaft can be with a part for ceramic member same structure and can pass through from some structures of mechanically cutting ceramic member thus leave back shaft and formed.Back shaft can abut the end of ceramic member after connection handling.In certain embodiments, back shaft may be used for producing the minimized brazing layer thickness for connecting portion.In certain embodiments, the brazing layer material before soldering is by thicker than the distance kept by the back shaft between shaft end and plate or powder particle.In certain embodiments, other method can be used to set up minimum brazing layer thickness.In certain embodiments, Ceramic Balls may be used for setting up minimum brazing layer thickness.In certain aspects, connecting portion thickness can be more bigger than the size of back shaft or other minimum thickness determining device, and reason is need not from extruding all brazing materials between strutting piece and the contact surface adjoined.In certain aspects, the aluminum brazing layer of a part can be found between strutting piece and the contact-making surface adjoined.In certain embodiments, the thickness of the brazing material before soldering can be 0.006 inch, and wherein, the minimum thickness of complete connecting portion is 0.004 inch.The aluminium of brazing material can be iron weight ratio be 0.4Wt.%.In certain embodiments, strutting piece can not be used.

Be in the device of aluminium at brazing material, when crossing connecting portion and find the atmosphere of two types on both sides, described brazing material should be compatible with the atmosphere of this two type.Aluminium has the self limit layer forming aluminium oxide.This layer is evenly overall and once formation just prevents or significantly limit other oxygen or other oxidizing chemical (fluorine chemical) penetrates into bottom aluminium and continues oxidizing process.By this way, there is the process of the heat of oxidation of short duration at first or corrosion aluminium, pass through the oxide layer (fluoride layer) be formed on the surface of aluminium subsequently and substantially stop or slowing down described oxidation or corrosion aluminium.Brazing material can be the form of sheet material, powder, film or other form factor any being suitable for soldering process described herein.Such as, brazing layer can be sheet material, the thickness of described sheet material between 0.00019 inch to 0.011 inch or larger between.In certain embodiments, brazing material can be the sheet material that thickness is approximately 0.0012 inch.In certain embodiments, brazing material can be the sheet material that thickness is about 0.006 inch.Usually, between the crystal boundary of aluminium, the alloying component (such as, magnesium) in aluminium is formed along with precipitation.Although they can reduce the antioxygenic property of aluminium binder course, but these sediments can not form the continuous path by aluminium usually, and do not allow oxidant through full aluminium lamination thus, and what make aluminium thus keeps complete from restriction oxide layer, the oxide layer of restriction certainly of described aluminium provides its corrosion resistance.The parameter comprising in the embodiment of the aluminium alloy that can form sedimentary composition, process, comprise cooling agreement in use will be suitable for the sediment minimized in crystal lattice boundaries.Such as, in one embodiment, brazing material can be aluminium, and the purity of described aluminium is at least 99.5%.In certain embodiments, can use the obtainable aluminium foil of business, the purity of described aluminium foil is greater than 92%.In certain embodiments, alloy is used.Alloy can comprise Al-5w%Zr, Al-5w%Ti, industrial alloy #7005, #5083 and #7075.In certain embodiments, these alloys can be used at the connection temperature of 1100 DEG C.In certain embodiments, these alloys can be used under the temperature conditions between 800 DEG C and 1200 DEG C.In certain embodiments, these alloys can be used under lower or higher temperature conditions.

Under the condition processed according to an embodiment of the invention, AIN causes after manufacturing the soldering processes in plate shaft assembly process, remain pottery material property and density of material along with the insensitivity that aluminium spreads.

In certain embodiments, connection handling is implemented being suitable for providing in the process chamber of low-down pressure.Connection handling may require anaerobic according to an embodiment of the invention, for the connecting portion realizing airtight sealing.In certain embodiments, under lower than the pressure condition of 1 × 10E-4Torr, process is implemented.In some is implemented, under lower than the pressure condition of 1 × 10E-5Torr, implement process.In certain embodiments, realize deoxygenation further, wherein, zirconia or titanium are placed in the process chamber.Such as, in zirconia, room can be placed on around part to be connected.

In certain embodiments, the atmosphere except vacuum can be used to realize airtight sealing.In certain embodiments, argon (Ar) atmosphere may be used for realizing bubble-tight connecting portion.In certain embodiments, other inert gas is used for realizing bubble-tight connecting portion.In certain embodiments, hydrogen (H ₂) atmosphere may be used for realizing bubble-tight connecting portion.

Wetting and the flowing of brazing layer is responsive to many factors.The factor paid close attention to comprises the chemical component (oxygen level especially in connection handling process room) of the atmosphere in brazing material composition, ceramic component, process chamber, the geometry of the surface characteristics of the thickness of temperature, temperature retention time, brazing material, material to be connected, part to be connected, the joint gap that is applied to the physical pressure on connecting portion and/or keeps during connection handling during connection handling.

In certain embodiments, pottery surface can ceramic member is placed in room be used for connect before bear metallization.In certain embodiments, metallization can be frictional metal.Frictional metalization can comprise use aluminium bar.Throw may be used for aluminium bar is rotated on such region, and when connector, brazing layer will be adjoined in described region.Frictional metal step can leave over some aluminium lower on the surface of ceramic member.Frictional metal step such as can change ceramic surface by removing some oxide in a way, makes surface be more suitable for wetting brazing material.Metallization step is thin film sputtering in certain embodiments.

Example for the method for welding linked together by the first and second ceramic members comprises such step: namely, the brazing layer making the first and second ceramic members and be selected from the group be made up of the aluminum and its alloy be arranged between the first and second ceramic members links together, the temperature of heating soldering layer at least 800 DEG C and the temperature that is cooled to by brazing layer lower than its fusion point, brazing layer is made to harden and produce gas tight seal, the first component is connected to second component.The various geometries of brazed joints can be implemented according to method described herein.

Some or all in can comprising the following steps according to the connection handling of some embodiment of the present invention.Select two or more ceramic member, for connecting.In certain embodiments, can in same group for the treatment of step, multiple articulamentum be used to connect multiple, but clear in order to discuss, an articulamentum will be utilized to connect two ceramic members in this discussion.Ceramic member can be aluminium nitride.Ceramic member can be monocrystalline or polycrystalline aluminum nitride.The part of each ceramic member has all been regarded as each ceramic member and will be connected to region each other.In graphic embodiment, the part of the bottom of ceramic wafer structure will be connected to the top of ceramic hollow tubular construction.Connecting material can be the brazing layer comprising aluminium.In certain embodiments, brazing layer can be the obtainable aluminium foil of business, and its aluminium content is greater than 99%.In certain embodiments, brazing layer can be made up of multilayer paper tinsel.

In certain embodiments, concrete surf zone to be connected will bear metallization step in advance.Metallization step in advance can be realized in many ways.Have employed friction in one approach to metallize in advance, by using the metal bar of 6061 aluminium alloys to rotate together along with throw and to be pressed against on the pottery in connecting portion region, in each in two ceramic members making some aluminium can deposit in the region of connecting portion.In another approach, PVD (physical vapor deposition), CVD (chemically vapour-deposite), plating processing, plasma spraying or other method may be used for applying to metallize in advance.

Before proceeding, relative to each other can fix two ceramic members, to be in some Position Control of period maintenance in process chamber.Fixing also contributing to, applies applied load, to produce contact on whole connecting portion during the applying temperature between two ceramic members.Ballast can be placed on the top of fixing ceramic member, contact is applied on connecting portion.Ballast can be proportional with the area of brazing layer.In certain embodiments, the contact be applied on connecting portion acted on connecting portion contact area can be in about 2psi to 500psi scope.In certain embodiments, contact can be in the scope of 2psi to 40psi.In certain embodiments, minimum pressure can be used.Application contact is in this step well below the contact such as used in existing process in the Connection Step of drop stamping/sintering, and described prior art process can use the pressure in 2000psi to 300psi scope.

Use back shaft as strutting piece or use such as Ceramic Balls connecting portion THICKNESS CONTROL other method embodiment in, the height of back shaft can be greater than at the original thickness applying the brazing layer before heat.When brazing layer temperature reaches and surmounts liquidus temperature, the pressure between the ceramic member connected on brazing layer will cause relative motion between ceramic member until back shaft on the first ceramic member contacts the contact surface on the second ceramic member.Now, the contact on connecting portion will no longer by external force supply (if any, except the resistance of the repulsive force in brazing layer).Before complete wetting ceramic member, back shaft can prevent brazing layer to be pushed out into connecting portion region and can allow thus better and/or more fully to soak during connection handling.In certain embodiments, back shaft is not used.

Fixation kit can be placed in process stove.Stove can empty to the pressure being less than 5 × 10E-5Torr.In certain aspects, vacuum removes remaining oxygen.In certain embodiments, the vacuum lower than 1 × 10E-5Torr is used.In certain embodiments, fixation kit is placed in zirconium indoor, and in described zirconium, room is as oxygen attractant, thus further reduces the remaining oxygen that may reach connecting portion during processing.In certain embodiments, purify with pure dehydration pure inert gas (such as argon gas) and again fill process stove, to remove oxygen.In certain embodiments, purify by purified hydrogen and again fill process stove, to remove oxygen.

Then fixation kit bearing temperature raises, and under remaining in connection temperature conditions.When starting heat cycles, temperature can slowly raise, such as 15 DEG C per minute are increased to 200 DEG C, after this think that 20 DEG C per minute are increased to normal temperature, such as 600 DEG C be connected temperature and keep each temperature one fixed dwell time, to allow to recover vacuum after heating, for minimizing gradient and/or for other reasons.When reaching brazing temperature, temperature one can be kept effectively to implement the time of soldering reaction (required).In the exemplary embodiment, stopping temperature can be 800 DEG C and the time of staying can be 2 hours.In another exemplary embodiment, stopping temperature can be 1000 DEG C and the time of staying can 15 minutes.In another exemplary embodiment, stopping temperature can be 1150 DEG C and the time of staying can be 30 to 45 minutes.In certain embodiments, stopping temperature can not more than the maximum of 1200 DEG C.In certain embodiments, stopping temperature can not more than the maximum of 1300 DEG C.When realizing effective soldering time of staying, smelting furnace can be cooled to room temperature with the speed of 20 DEG C per minute cooling smelting furnace or when intrinsic smelting furnace cooldown rate is less with slower speed.Under smelting furnace can be made to be in atmospheric pressure conditions, can remove and open and the assembly of soldering, for inspection, feature interpretation and/or assessment.

In the long time period, use too high temperature may cause forming space in articulamentum because of significant aluminum evaporation.Because space is formed in articulamentum, so the air-tightness of possible loss connecting portion.Can control treatment temperature and treatment temperature retention time, aluminium lamination can not be evaporated, and make to realize bubble-tight connecting portion., except other process parameter above-mentioned, continuous connecting portion can be formed when proper temperature and processing time control.To cause producing airtight sealing parts according to the continuous connecting portion that embodiment described herein realizes, and structure attachment.

Brazing material is by flowing and permission is wetting just on the surface of the ceramic material of soldering.When using aluminum brazing layer and connect such as aluminium nitride ceramic at the enough low and use aluminum brazing layer as described herein of oxygen content, connecting portion is the connecting portion of airtight soldering.This is contrary with the situation of the diffusion bond in some existing ceramic joining process.

In certain embodiments, ceramic member to be connected can be configured to, and makes during soldering, do not have pressure to act on brazing layer.Such as, post or axle can be placed into and coordinate in countersunk in ceramic member or recess.Countersunk can be greater than the external dimensions of post or axle.This can produce around post or axle subsequently can the region of filling aluminum or aluminium alloy.In this scheme, the pressure be applied to keep during connecting between two ceramic members can not cause producing any pressure acted on brazing layer.And, can use and fixing each ceramic member to be remained in preferred end position, make between ceramic member, to there is little pressure or there is no pressure.

Connect as mentioned above and the coupling assembling connect obtain parts there is bubble-tight sealing between the connected components.In the process using assembly, gas isolating can use this assembly in the situation of importance.In addition, can not demote in this atmosphere also can not contaminate subsequent semiconductor processes for the part that can be exposed to various atmosphere when the assembly connected is applied in semiconductor processes subsequently of connecting portion.

Because the significant power of needs is separated each parts, therefore the connecting portion of air-tightness and non-airtight all can connector securely.But whether connecting portion does not firmly depend on whether connecting portion provides airtight sealing.The ability obtaining air-tightness connecting portion can wetting relevant with connecting portion.Wetting describe the ability of liquid dispersion on the surface of another kind of material or trend.If exist insufficient wetting in brazed joints, then the region can not implementing to combine will be there is.If have enough non-wetting zones, then gas can by connecting portion, thus cause leaking.Different phase in the process of melting brazing material, the pressure on connecting portion can affect wetting.Exceed ceramic minimum range by using back shaft strutting piece or other support means (such as inserting the powder particle of Ceramic Balls or suitable diameter) limit compression brazing layer and can strengthen the wetting of connecting portion region.Experience atmosphere by soldering element during careful control connection process and can strengthen the wetting of connecting portion region.In combination, careful control connection portion thickness and the careful atmosphere controlling to use during processing can cause complete wetting connecting portion contact area, and this is irrealizable in other process.In addition, quote factor in conjunction with other, by use the brazing layer with suitable thickness can cause very good wetting, airtight be connected, described suitable thickness can be larger than back shaft strutting piece height.Although different articulamentum thickness may be successful, the thickness of the increase of articulamentum may strengthen the success rate of the airtight aspect of connecting portion.

During soldering process, there is the reaction that a large amount of oxygen or nitrogen can cause the complete wetting that can interfere with connecting portion contact area, this correspondingly may cause not airtight connecting portion.When not having complete wetting, the region of non-wetted is introduced in the final connecting portion in connecting portion contact area.When introducing enough continuous print non-wetting zones, by the air-tightness of loss connecting portion.

There is nitrogen may cause the aluminium of nitrogen and melting to react formation aluminium nitride, and this reaction formation can disturb wetting connecting portion contact area.Similarly, there is oxygen and oxygen and molten aluminum can be caused to react formation aluminium oxide, and this reaction is formed and can disturb the wetting of connecting portion contact area.Use pressure to demonstrate lower than the vacuum atmosphere of 5 × 10-5Torr and remove enough oxygen and nitrogen, to allow completely sane wetting connecting portion contact area and bubble-tight connecting portion.In certain embodiments, use higher pressure, comprise atmospheric pressure, and use non-oxidized gas, such as hydrogen or pure inert gas, such as argon gas, such as, also can cause in the process chamber during soldering processes soaking connecting portion contact area and bubble-tight connecting portion steadily.In order to avoid there is oxygen mentioned above reaction, the oxygen content during soldering process in process chamber must be low to being enough to make to cause negative influence to complete wetting connecting portion contact area.In order to avoid there is nitrogen mentioned above reaction, the nitrogen content existed in the process chamber during soldering process must be low to being enough to make to cause negative influence to complete wetting connecting portion contact area.

Combine with minimally connecting portion thickness, during soldering process, select suitable atmosphere can allow complete wetting connecting portion.On the contrary, select unsuitable atmosphere may cause not good enough wetting, produce space and cause the connecting portion of non-hermetically sealed.Controlled atmospher and the appropriately combined of control connection portion thickness allow to utilize bubble-tight connecting portion connecting material together with the temperature during suitable Material selec-tion and soldering.

In some embodiments of the invention, wherein, one or two in ceramic surface are metallized before the brazing in advance, such as, utilize aluminium thin film sputtering, and connection handling step can use the low temperature keeping shorter time.When starting heat cycles, temperature can slowly raise, such as be increased to 200 DEG C with 15 DEG C per minute and be increased to normal temperature with 20 DEG C per minute subsequently, such as 600 DEG C be connected temperature and often kind of temperature all keeps the fixed dwell time, to allow to recover vacuum after heating, for minimizing gradient and/or for other reasons.When reaching brazing temperature, temperature one can be kept effectively to implement the time of soldering reaction (required).Using in some the one or more embodiments in metallized contact surface in advance, brazing temperature can be in the scope of 600 DEG C to 850 DEG C.In the exemplary embodiment, stopping temperature can be 700 DEG C and the time of staying can be 1 minute.In another exemplary embodiment, stopping temperature can be 750 DEG C and the time of staying can 1 minute.When realizing effective soldering time of staying, smelting furnace can be cooled to room temperature with the speed of 20 DEG C per minute cooling smelting furnace or when intrinsic smelting furnace cooldown rate is less with slower speed.Under smelting furnace can be made to be in atmospheric pressure conditions, can remove and open and the assembly of soldering, for inspection, feature interpretation and/or assessment.

About not by aluminium layer deposition to the aluminium soldering process on connecting portion contact area, such process is at low temperature and under brazing temperature condition, experience short residence time create bubble-tight connecting portion, in described process, such as, film sputtering technologies pottery is utilized to have the thin aluminium lamination be deposited thereon.Use deposition aluminium lamination on the contact surface can be relatively more convenient and need less energy wetting surface, thus allow to use lower temperature and the shorter time of staying to realize bubble-tight connecting portion.

The following is the process summary of this soldering process: connecting portion is between two parts of polycrystalline aluminum nitride.Brazing layer material is 0.003 " aluminium foil of thick 99.8%.Use the thin film deposition of the aluminium of 2 micron thickness to the connecting portion region of the ring-shaped article that metallizes.Connect temperature be 780 DEG C and keep 10 minutes.Implement in the process chamber to connect under lower than the pressure condition of 6 × 10E-5Torr.Using 0.004 " zirconia balls of diameter keeps connecting portion thickness.First (annular element) accepted etch processes before deposition of thin aluminium lamination.The acoustic image of connecting portion is shown in its entirety pottery by the pure dark color in the position of good wet.Find the good and sufficient integrality of connecting portion.This connecting portion is airtight.Air-tightness is verified by the vacuum leak rate being less than 1 × 10E-9sccmHe/sec; Checking is implemented by the obtainable helium mass spectrometer leak detector of normal business.

Manufacture multizone heater assembly according to embodiments of the invention to allow to insert thermocouple after the ceramic member of final sintered heater, wherein utilize the district of thermocouple monitoring heater.The external environment condition of bearing is kept apart by the gas tight seal also by being suitable for bearing high temperature and those etchant gases by thermocouple and heater during semiconductor processes, and described external environment condition can comprise etchant gas.In addition, gas tight seal or structural connection, and a soldering processes anatomical connectivity can be utilized and airtight sealing multi-part assembly.

Another advantage of method of attachment as described herein can allow disconnect assembly as required according to the connecting portion of some embodiments of the present invention, to keep in repair or to replace in two parts.Because connection handling does not revise ceramic member by being diffused in pottery by articulamentum, so ceramic member can be reused.

In certain embodiments, come aligning and the position of retainer shaft and plate by parts geometry, thus eliminate fixing and post in conjunction with machining.Increase the weight of to may be used for guaranteeing except occurring when brazing material melts, other motion can not occur except some axial-movement during combination process.Can place plate from top to bottom, wherein, Connection Element is arranged in the recess of the rear surface of plate.Axle can be inserted in the recess in plate vertically downward.Weighting material can be placed on axle 401, to provide some contact during connection handling.

In certain embodiments, by fixedly coming the position of retainer shaft/plate with vertical.Fixing may be accurate not because of thermal expansion and allowance for finish, therefore, post may be needed in conjunction with machining.Shaft diameter can be increased and remove thing, to meet final size requirement to hold required material.And, increase the weight of to may be used for guaranteeing except occurring when brazing material melts, other motion can not occur except some axial-movement during combination process.Can place plate from top to bottom, wherein, Connection Element is positioned at above the rear surface of plate.Axle can be placed on plate, to produce plate and axle pre-assembly.Fixture is suitable for supporting and locating shaft.Fixture can be fixed in plate with pin, to provide position integrality.Ballast can be placed on axle, to provide some contact during connection handling.

An aspect of of the present present invention be as by select for the aluminium that connects or aluminium alloy the hot strength along with lapse of temperature the maximum operating temp of the axle-plate of combination that limits.Such as, if fine aluminium is used as connecting material, then the structural strength of the joint portion between axle and plate becomes extremely low close to the melt temperature (being generally 660 DEG C) of aluminium along with the temperature of connecting portion.In practice, when use 99.5% or fine aluminium, axle-board component will bear all normal direction and expection stress that meet with in typical silicon wafer handling implement for the temperature of 600 DEG C.But some fabricating semiconductor devices needs the temperature being greater than 600 DEG C.

Overhaul procedure can be implemented as follows, for disconnecting according to the assembly that embodiments of the invention connect.Fixture can be used to be placed on by this assembly in process stove, and described fixture is suitable for tension force to be applied on connecting portion.Fix and the tensile stress of about 2psi to 30psi can be applied to connecting portion contact area.In certain embodiments, fix and larger stress can be applied on connecting portion.Fixation kit can be placed in process stove subsequently.Can emptying stove, although may not need emptying during these steps.Slow raised temperature, such as, 15 DEG C per minute are increased to 200 DEG C, are increased to normal temperature subsequently with 20 DEG C per minute, such as, 400 DEG C, then reach separately temperature.Reach separately temperature time, part can be separated from each other out.Separate the material that temperature uses in brazing layer.In certain embodiments, separately temperature can between 600 DEG C within the scope of 800 DEG C.Fix and can be suitable for finite motion between permission two parts, making can not damaged part when being separated.Separately temperature can be special because of material.With regard to aluminium, separately temperature can between 450 DEG C within the scope of 660 DEG C.

Before reusing the part previously used, such as ceramic shaft, can remove irregular surface by machining connecting portion region and prepare part, for reusing.In certain embodiments, it is desirable to remove all residual braze materials, make the total amount controlling the brazing material in connecting portion when part is connected to new mating parts.

With compared with producing the method for attachment of diffusion layer in pottery, the connection handling according to some embodiment of the present invention can not cause such diffusion layer.Therefore, pottery keeps the material property identical with before soldering processes with brazing material after soldering processes.Therefore, if need to reuse parts after releasing, then identical material and identical material property should be there is in these parts, to allow to reuse under the condition of known composition and performance.

In one embodiment, provide a kind of wafer chuck for using in manufacture of semiconductor and described wafer chuck can comprise: axle, described axle has axis and end; Plate, described plate is connected to the end of axle and has the part extending radially outward beyond axle from axis; Temperature sensor, described temperature sensor is arranged in the described part of described plate; And electrical lead, described electrical lead extends through axle from temperature sensor, for measuring the temperature of described plate near temperature sensor during manufacture of semiconductor.

Plate can be ceramic wafer.Wafer chuck can also comprise additional temperature sensor, and described additional temperature sensor and described temperature sensor are arranged in the described part of described plate at a distance of certain radial distance; And additional electrical lead-in wire, described additional electrical lead-in wire extends through axle from additional temperature sensor, for the temperature of measurement plate near additional temperature sensor.Wafer chuck can also comprise: primary heater, and it for heating described plate near temperature sensor; And secondary heater, it for heating described plate independent of primary heater near additional temperature sensor.Plate can be formed by least the first flaggy and the second flaggy adjoined, described second flaggy is hermetic connected to the first flaggy, described first flaggy has first surface, described second flaggy has the second surface relative with described first surface, at least one in described first and second surfaces has recess wherein, for being formed in the recess for receiving electrical lead extended between temperature sensor and axle between the first flaggy and the second flaggy.Recess can comprise: for receiving the first passage of electrical lead; With the second channel for receiving additional electrical lead-in wire.Recess can comprise the cylindrical chamber centered by described axis.Wafer chuck can also comprise articulamentum, and described articulamentum is arranged between the first described flaggy and the second flaggy, hermetic links together for by each flaggy.Temperature sensor can be thermocouple.

In one embodiment, provide a kind of multizone heater and described multizone heater can comprise heating plate, described heating plate comprises: primary heater, and described primary heater can with heating plate center at a distance of the first radial distance; First thermocouple sheath, described first thermocouple sheath is positioned at the scope of described first radial distance; First thermocouple, described first thermocouple is positioned at described first thermocouple sheath; Secondary heater, described secondary heater is positioned at and the scope place of heating plate center at a distance of the second radial distance, and wherein, compared with the region of described first radial distance, the range distance heating plate center of described second radial distance is farther; And second thermocouple sheath, described second thermocouple sheath is positioned at the scope of described second radial distance; Second thermocouple, described second thermocouple is positioned at described second thermocouple sheath; Passage between heating plate and lid; And the lid on described passage, wherein, described second thermocouple comprises and going between through the remote measurement of described passage along separate routes.

Multizone heater can also comprise the hollow heated mandrel being attached to described heating plate, and described hollow heated mandrel comprises inner surface and outer surface.Second thermocouple sheath can be positioned at the areas outside surrounded by the inside of hollow heated mandrel in heating plate.The remote measurement lead-in wire of described second thermocouple can enter into the inside of described hollow heated mandrel along separate routes through described passage.Can utilize the first articulamentum that lid is hermetic connected to described heating plate.Heating plate can comprise aluminium nitride.Hollow heated mandrel can comprise aluminium nitride.First articulamentum can comprise aluminium.Multizone heater can also comprise the second articulamentum, described second articulamentum is arranged between described heating plate and described hollow heated mandrel, wherein, described second articulamentum hermetic seals the inner space of described axle with the external isolation by described second articulamentum and described axle.Second articulamentum can comprise aluminium.

In one embodiment, provide a kind of multizone heater and described multizone heater can comprise Multi-layer warming plate, described Multi-layer warming plate can comprise: top board layer; One or more intermediate laminae; Backplane level; And multiple plate articulamentum, described multiple plate articulamentum is arranged between described each flaggy, and wherein, described articulamentum connects described each flaggy; Multiple heating element districts between two flaggies, described heating element district is suitable for being controlled separately; With multiple thermocouple, between two flaggies of described the installation of TC in described flaggy.

Thermocouple can be positioned to the center of described Multi-layer warming plate at a distance of multiple distance.Multizone heater can also comprise hollow heated mandrel, and described hollow heated mandrel is attached to the lower surface of described Multi-layer warming plate.Thermocouple can comprise thermocouple lead, and thermocouple lead can along separate routes through the inside of described hollow heated mandrel.One or more in described thermocouple can be positioned at by the outside being attached to the region that multiple-plate axle surrounds.Multizone heater can also comprise the articulamentum between described hollow heated mandrel and described multi-layer sheet.Multiple plate articulamentum can comprise aluminium.Articulamentum between described hollow heated mandrel and described multi-layer sheet can comprise aluminium.Top board layer and described backplane level can comprise pottery.Hollow heated mandrel can comprise aluminium.Multiple plate articulamentum can comprise aluminium.Articulamentum between described hollow heated mandrel and described multi-layer sheet can comprise aluminium.Multizone heater can also comprise central bush, and described central bush is arranged between described hollow heated mandrel and described multi-layer sheet.

It is evident that according to above description, various embodiment can be constructed by description given in this article, and those skilled in the art are easy to obtain more advantage and flexible program.Therefore, aspect widely of the present invention is not limited to the detail of diagram and description and illustrative example.Therefore, do not deviate from the applicant subject invention spirit and scope prerequisite under, can change these details.

Claims

1. the wafer chuck for using in manufacture of semiconductor, comprising: axle, and described axle has axis and end; Plate, described plate is connected to the end of described axle and has the part extending radially outward beyond described axle from described axis; Temperature sensor, described temperature sensor is arranged in the described part of described plate; And electrical lead, described electrical lead extends through described axle from described temperature sensor, for measuring the temperature of described plate near described temperature sensor during manufacture of semiconductor.

2. wafer chuck according to claim 1, wherein, described plate is ceramic wafer.

3. wafer chuck according to claim 1, also comprises: additional temperature sensor, and described additional temperature sensor and described temperature sensor are arranged in the described part of described plate at a distance of certain radial distance; And additional electrical lead-in wire, described additional electrical lead-in wire extends through described axle from described additional temperature sensor, for the temperature of the described plate of measurement near described additional temperature sensor.

4. wafer chuck according to claim 3, also comprises: primary heater, and described primary heater is used for heating described plate near described temperature sensor; And secondary heater, described secondary heater is used near described additional temperature sensor, heating described plate independent of described primary heater.

5. wafer chuck according to claim 3, wherein, described plate is formed by least the first flaggy and the second flaggy adjoined, described second flaggy is hermetic connected to described first flaggy, described first flaggy has first surface, described second flaggy has the second surface relative with described first surface, at least one in described first surface and second surface has recess wherein, for being formed in the recess for receiving described electrical lead extended between described temperature sensor and described axle between described first flaggy and the second flaggy.

6. wafer chuck according to claim 5, wherein, described recess comprises: for receiving the first passage of described electrical lead; With the second channel for receiving described additional electrical lead-in wire.

7. wafer chuck according to claim 5, wherein, described recess comprises the cylindrical chamber centered by described axis.

8. wafer chuck according to claim 5, also comprises articulamentum, and described articulamentum is arranged between described first flaggy and described second flaggy, hermetic links together for by each flaggy.

9. wafer chuck according to claim 1, wherein, described temperature sensor is thermocouple.