CN115410978B - Electrostatic chuck and semiconductor processing apparatus - Google Patents
Electrostatic chuck and semiconductor processing apparatus Download PDFInfo
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- CN115410978B CN115410978B CN202211041186.6A CN202211041186A CN115410978B CN 115410978 B CN115410978 B CN 115410978B CN 202211041186 A CN202211041186 A CN 202211041186A CN 115410978 B CN115410978 B CN 115410978B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a bearing device and semiconductor process equipment, wherein the bearing device comprises an adsorption disc for bearing a wafer to be processed, and a cooling part and a heat conduction part which are arranged at the bottom of the adsorption disc, and the heat conduction part is positioned between the adsorption disc and the cooling part; the cooling component is used for cooling the adsorption disc through the heat conduction component; the heat conducting member is for controlling a heat transfer rate between the cooling member and the adsorption disk. The scheme of the invention can solve the problem that the electrostatic chuck cannot rise to higher temperature due to the excessively high cooling speed of the water-cooled disc in the prior art.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck and semiconductor process equipment.
Background
Electrostatic chucks (Electrostatic Chuck, ESC) are used in semiconductor processes for chucking objects to be processed, such as wafers, trays, etc., and are widely used in physical vapor deposition (PhysicalVapor Deposition, PVD) processes, etching (tech) processes, chemical vapor deposition (Chemical Vapor Deposition, CVD) processes, ion implantation processes, etc. The electrostatic chuck has the main functions of adsorbing and fixing a wafer and heating or cooling the wafer in the process, so that the requirements of various semiconductor processes are met.
The heating function of the electrostatic chuck is usually achieved by providing heating wires in the chuck, while the cooling function is usually achieved by providing a water-cooled plate below the chuck. However, in some special processes, the electrostatic chuck is required to heat the wafer and cool the wafer, for example, the PVD Al deposition process is required to control the heating power of the heating wire by the temperature control unit to heat the electrostatic chuck to a desired process temperature, and then the wafer is transferred into the process chamber by the robot and placed on the electrostatic chuck; then, the magnetron sputtering process is started, during which ions in the plasma bombard the wafer surface, and the kinetic energy of the ions is converted into heat energy, which is very high and causes the wafer temperature to exceed the process temperature, in which case the electrostatic chuck needs to have a cooling function in addition to a heating function, so as to keep the wafer below the process temperature during the whole process.
However, the conventional electrostatic chuck has a problem that the electrostatic chuck cannot be raised to a high temperature due to an excessively high cooling rate of the water-cooled disk, and thus a process requiring a high temperature for the electrostatic chuck cannot be satisfied.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides an electrostatic chuck and semiconductor process equipment, which can solve the problem that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of a water-cooled disc in the prior art.
The invention provides a bearing device for a semiconductor device, which comprises an adsorption disc for bearing a wafer to be processed, a cooling part and a heat conduction part, wherein the cooling part and the heat conduction part are arranged at the bottom of the adsorption disc, and the heat conduction part is positioned between the adsorption disc and the cooling part;
the cooling component is used for cooling the adsorption disc through the heat conduction component;
the heat conducting member is for controlling a heat conduction rate between the cooling member and the adsorption disk.
Optionally, the heat conducting component adopts a thin-wall structure, and the heat conduction rate is controlled by setting parameters related to heat conduction of the thin-wall structure;
the parameters include the number of thin walls contained by the thin-walled structure, and/or the dimension of the thin-walled structure in the axial direction of the adsorption disc, and/or the cross-sectional area of the thin-walled structure in the radial direction of the adsorption disc.
Optionally, the thin-wall structure comprises a ring-shaped heat transfer body and at least one thin-wall ring arranged on the heat transfer body; one end of the thin-wall ring is connected with the heat transfer body, and the other end of the thin-wall ring is connected with the adsorption disc;
the cooling component is connected with the heat transfer body.
Optionally, an annular boss is arranged at one end of each thin-wall ring connected with the adsorption disc; the radial width of the annular boss is greater than the radial width of the thin wall ring.
Optionally, a mounting part is arranged at the bottom of the heat transfer body, and a mounting groove is formed on the mounting part;
the cooling component comprises a cooling pipe for conveying a cooling medium, and the cooling pipe is arranged in the mounting groove.
Optionally, the cooling component includes an annular cover plate in sealing connection with the heat transfer body, and a cooling channel formed between a top surface of the annular cover plate and a bottom surface of the heat transfer body for conveying a cooling medium.
Optionally, the heat distribution device further comprises a heat distribution piece, wherein the heat distribution piece is connected between the adsorption disc and the heat conduction component, and the heat distribution piece is used for improving the uniformity of heat conduction.
Optionally, a thermal interface material layer is disposed between the heat spreader and the adsorption disk.
Optionally, the material of the thermal interface material layer includes graphite, graphene or aluminum foil.
Optionally, the device further comprises a fixing component and a tightening component, wherein the fixing component is connected to the bottom of the adsorption disc and surrounds an accommodating space with the bottom of the adsorption disc; the heat conducting component, the cooling component and the propping assembly are all positioned in the accommodating space;
the jacking assembly is located between the heat conducting component and the fixing component and is used for applying pressure towards the adsorption disc to the heat conducting component.
Optionally, the material of the adsorption disc is ceramic, and the material of the fixing part comprises iron-cobalt-nickel alloy.
Optionally, the tightening assembly includes a limiting ring and a plurality of elastic members disposed on the limiting ring, and the plurality of elastic members are uniformly distributed along the circumferential direction of the limiting ring;
the top surface of the limiting ring is contacted with the bottom surface of the heat conducting component;
the elastic pieces are arranged between the limiting ring and the fixing part and are used for applying pressure towards the adsorption disc to the limiting ring through elastic deformation.
Optionally, a plurality of mounting holes are formed on the bottom surface of the limiting ring, and a plurality of elastic pieces are arranged in the plurality of mounting holes in a one-to-one correspondence manner.
Optionally, the material of the heat conducting component comprises stainless steel, molybdenum or nickel-based alloy.
Optionally, the connection mode of the heat conducting component and the heat homogenizing piece comprises welding, crimping or riveting.
Optionally, the connection mode of the cooling pipe and the mounting part comprises welding, crimping or riveting.
As another technical scheme, the invention also provides a semiconductor process device, which comprises a process chamber and a bearing device arranged in the process chamber, wherein the bearing device adopts the bearing device provided by the invention.
The invention has the following beneficial effects:
the bearing device provided by the invention is used in semiconductor equipment, can be an electrostatic chuck device, comprises an adsorption disc for bearing wafers to be processed, and a cooling part and a heat conducting part which are arranged at the bottom of the adsorption disc, wherein the cooling part is used for cooling the adsorption disc through the heat conducting part, and the heat conduction rate between the cooling part and the adsorption disc is controlled through the heat conducting part, so that the problem that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of the water-cooled disc in the prior art can be solved, and the bearing device can be suitable for a process with high temperature requirements on the electrostatic chuck.
The semiconductor process equipment provided by the invention can solve the problem that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of the water-cooled disc in the prior art by adopting the bearing device provided by the invention, so that the semiconductor process equipment can be suitable for a process with a high temperature requirement on the electrostatic chuck.
Drawings
FIG. 1 is a block diagram of an adsorption disk employed in an embodiment of the present invention;
fig. 2A is a structural diagram of a carrying device according to an embodiment of the present invention;
fig. 2B is another structural diagram of a carrying device according to an embodiment of the present invention;
FIG. 3 is a perspective cross-sectional view of a cooling member employed in an embodiment of the present invention;
FIG. 4 is another cross-sectional view of a cooling member employed in an embodiment of the present invention;
FIG. 5 is a block diagram of a jack assembly employed in an embodiment of the present invention;
fig. 6 is a block diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
Detailed Description
In order to better understand the technical scheme of the present invention, the electrostatic chuck and the semiconductor process equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1 and fig. 2A together, an embodiment of the present invention provides a carrier device, which may be an electrostatic chuck device, for use in a semiconductor device, and includes an adsorption disc 20 and a cooling component 30 disposed at the bottom of the adsorption disc 20. In some alternative embodiments, the material of the adsorption disk 20 may be an insulating material, such as Al 2 O 3 Ceramics such as AlN and SiC are more suitable for high-temperature working conditions due to higher thermal conductivity and lower thermal expansion coefficient of AlN. Alternatively, it may be a semiconductor material, such as a ceramic doped with a metal oxide.
In order to achieve better heat conduction, as shown in fig. 1, a certain pressure of back-blowing gas is generally introduced between the wafer 11 and the adsorption disk 20, and on the basis, in order to achieve better gas-homogenizing effect, a certain number of grooves (not shown) and bumps 24 are provided on the upper surface of the adsorption disk 20 for improving the back-blowing gasIs a uniform heating effect of (1). However, since the gravity of the wafer itself is not enough to maintain the back-blowing pressure, it is necessary to firmly adhere the wafer 11 to the surface of the chuck 20 by the electrostatic force between the wafer 11 and the chuck 20. Specifically, the chuck 20 is provided with a dc electrode 22, and the dc electrode 22 is electrically connected to a dc power supply 103, and the dc power supply 103 is configured to apply a dc voltage to the dc electrode 22 to generate an electrostatic force capable of adsorbing the wafer 11 on the surface of the chuck 20. The types of electrostatic chucks may be classified into coulomb type and J-R type according to the adsorption principle, wherein the coulomb type electrostatic chuck is characterized in that the material of the adsorption disk 20 is an insulating material, the resistance is relatively large, and when the dc voltage is applied, opposite electrostatic charges are formed on the dc electrode 22 and the wafer 11, respectively, so that the wafer 11 can be adsorbed on the surface of the adsorption disk 20 by coulomb force. For the J-R type electrostatic chuck, the material of the chuck 20 is semiconductor material, and the internal resistance is controlled to be 1×10 8 Omega cm to 1X 10 12 In the range of Ω·cm, electrostatic charges are mainly distributed on the surfaces of the wafer 11 and the dielectric layer 20 when the dc voltage is applied. At a lower dc voltage (e.g., 300V-500V), a greater electrostatic force is generated, thereby effecting the adsorption of the wafer 11 onto the surface of the dielectric layer 20. Optionally, the material of the dc electrode 22 includes a metal with a high melting point, such as molybdenum, tungsten, and platinum.
In order to provide the electrostatic chuck with a heating function, the chuck 20 is provided with a heating element 23, and the heating element 23 is, for example, a heating wire, and the heating element 23 is electrically connected to the ac power supply 109. To achieve good temperature uniformity, the heating elements 23 are generally uniformly distributed in the adsorber tray 20.
The adsorption disk 20 having the dc electrode 22 and the heating element 23 disposed therein may be manufactured by printing corresponding patterns on a plurality of ceramic casting sheets, for example, by screen printing, and manufacturing the ceramic casting sheets into ceramic green bodies having the dc electrode 22 and the heating element 23 embedded therein by a static pressure process, and sintering the ceramic green bodies to manufacture the adsorption disk 20. Alternatively, the adsorption disk 20 may be produced by placing the previously produced dc electrode 22 and heating element 23 into the ceramic powder prepared and then hot-press sintering the ceramic powder. After sintering is completed, as shown in fig. 2A and 2B, a gas homogenizing groove (not shown), a bump, and the like are formed on the upper surface of the adsorption disk 20, a plurality of through holes 21 for the ejector pins to pass through are formed in the adsorption disk 20, and four terminals of the dc electrode 22 and the heating element 23 and corresponding outgoing cables are provided at the bottom of the adsorption disk 20.
In some special processes, the electrostatic chuck is required to heat the wafer and cool the wafer, for example, the PVD Al deposition process is required to control the heating power of the heating element 23 by the temperature control unit to heat the chuck 20 to a desired process temperature, and then the wafer is transferred into the process chamber by the robot and placed on the chuck 20; then, the magnetron sputtering process is started, during which ions in the plasma bombard the wafer surface, and the kinetic energy of the ions is converted into heat energy, which is very high and causes the wafer temperature to exceed the process temperature, in which case the electrostatic chuck needs to have a cooling function in addition to a heating function, so as to keep the wafer below the process temperature during the whole process.
In this regard, the embodiment of the present invention provides a carrier device, which may be an electrostatic chuck device, for use in a semiconductor device. Specifically, as shown in fig. 2A, the carrying device includes an adsorption tray 20 for carrying wafers to be processed, and a cooling member 33 and a heat conducting member 32 disposed at the bottom of the adsorption tray 20, the heat conducting member 32 being located between the adsorption tray 20 and the cooling member 33; wherein the cooling part 33 is used for cooling the adsorption disk 20 through the heat conduction part 32; the heat conducting member 32 is used to control the rate of heat transfer between the cooling member 33 and the heat distributing member 31.
By combining the cooling part 33 with the heat conducting part 32, the heat conduction rate between the cooling part 33 and the adsorption disc 20 can be controlled on the basis of cooling the adsorption disc 20, so that the problem that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of the water-cooled disc in the prior art is solved, and the method can be suitable for a process with high temperature requirements on the electrostatic chuck.
The heat conducting member 32 is used to control the rate of heat transfer between the cooling member 33 and the adsorption disk 20, thereby achieving control of the heat transfer capacity of the entire cooling assembly 30. The following heat conduction formula is used:
wherein Q represents the heat conducted between the cooling member 33 and the adsorption tray 20; k represents the heat conductivity coefficient of the heat conductive member 32; a represents a heat transfer area (i.e., a contact area of the heat conductive member 32 with the adsorption tray 20); Δt represents the temperature difference between the cold end and the hot end, the cold end being the cooling member 33; the hot end is the adsorption disk 20.Δl represents the distance between the cold and hot ends, i.e., the length of thermally conductive member 32 between cooling member 33 and adsorption disk 20.
Based on the above heat conduction formula, on the premise that the material of the heat conduction member 32 is constant, the heat transfer area a and/or the length Δl of the heat conduction member 32 between the cooling member 33 and the adsorption plate 20 are changed, so that the heat Q can be controlled, and the heat conduction rate can be controlled. In some alternative embodiments, the thermally conductive member 32 is a thin-walled structure, and the rate of heat transfer is controlled by setting parameters of the thin-walled structure that are related to the heat Q. The parameters include the number of thin walls contained in the thin-walled structure, and/or the dimension of the thin-walled structure in the axial direction of the adsorption disk 20 (i.e., the length Δl), and/or the cross-sectional area of the thin-walled structure in the radial direction of the adsorption disk 20 (i.e., the heat transfer area a). Specifically, if it is desired to enhance the cooling effect, the number of thin walls may be increased, and/or the size of the thin-walled structure in the axial direction of the adsorption disk 20 may be reduced, and/or the cross-sectional area of the thin-walled structure in the radial direction of the adsorption disk 20 may be increased; conversely, if it is desired to reduce the cooling effect, the number of thin walls may be reduced, and/or the size of the thin-walled structure in the axial direction of the adsorption disk 20 may be increased, and/or the cross-sectional area of the thin-walled structure in the radial direction of the adsorption disk 20 may be reduced.
The existing electrostatic chuck also has the problem that the electrostatic chuck is heated unevenly due to overlarge temperature difference between the water-cooling disc and the electrostatic chuck, so that the adsorption disc is cracked at a high temperature, and the process uniformity is affected. To solve this problem, in other alternative embodiments, as shown in fig. 2B, the carrying device further includes a heat-equalizing member 31, where the heat-equalizing member 31 is connected between the adsorption disc 20 and the heat-conducting member 32, and the heat-equalizing member 31 is used to improve uniformity of heat conduction. By arranging the heat homogenizing member 31 between the adsorption disc 20 and the heat conducting member 32, the uniformity of heat conduction can be improved, so that the problem of uneven heating of the electrostatic chuck caused by overlarge temperature difference between the water cooling disc and the electrostatic chuck in the prior art can be solved, and the process uniformity is improved. It should be noted that, in the case of providing the heat uniforming member 31, the hot end in the temperature difference Δt between the cold end and the hot end in the heat conduction formula is the heat uniforming member 31, and the temperature thereof is close to the temperature of the adsorption disc 20. In practical applications, whether the heat equalizing member 31 is provided or not may be selected according to specific needs. The electrostatic chuck according to the embodiment of the present invention will be described in detail by taking the heat spreader 31 as an example.
The thin-wall structure may have various types, for example, as shown in fig. 3, the thin-wall structure includes a heat transfer body 321 having a ring shape and one or more thin-wall rings 322, for example, three thin-wall rings 322 are shown in fig. 3, where the thin-wall rings 322 are plural, the plural thin-wall rings 322 are nested with each other and are disposed at intervals; one end of each thin-wall ring 322 is connected with the heat transfer body 321, and the other end of each thin-wall ring 322 is connected with the heat homogenizing element 31; the cooling member 33 is connected to the heat transfer body 321. The thin-walled ring 322 has a radial thickness less than the axial length to form a thin-walled structure.
If enhanced cooling is desired, the number of thin-wall rings 322 may be increased (e.g., 3 or 4), and/or the size of the thin-wall rings 322 may be reduced in the axial direction of the adsorption disk 20, and/or the cross-sectional area of the thin-wall rings 322 in the radial direction of the adsorption disk 20 may be increased; conversely, if a reduced cooling effect is desired, the number of thin-wall rings 322 may be reduced (e.g., 1 or 2), and/or the size of the thin-wall rings 322 may be increased in the axial direction of the disk 20, and/or the cross-sectional area of the thin-wall rings 322 in the radial direction of the disk 20 may be reduced.
In some alternative embodiments, the end of each thin-walled ring 322 connected to the heat spreader 31 is provided with an annular boss 323, and the annular boss 323 is connected to the heat spreader 31; the radial width of the annular boss 323 is greater than the radial width of the thin-walled ring 322. By means of the annular boss 323, the contact area between the thin-wall ring 322 and the heat uniforming member 31 can be increased, and the strength of the thin-wall ring 322 can be improved, so that the support stability of the heat uniforming member 31 can be improved. Alternatively, the annular boss 323 may protrude with respect to the inner peripheral surface of the thin-wall ring 322, may protrude with respect to the outer peripheral surface of the thin-wall ring 322, and may protrude with respect to both the inner peripheral surface and the outer peripheral surface of the thin-wall ring 322. When the number of the thin-walled rings 322 is plural, the protruding directions of the annular bosses 323 on the different thin-walled rings 322 may be the same or different.
Optionally, the material of the heat conducting component (i.e., the thin-walled ring 322) includes a metal material with low thermal conductivity and good temperature resistance, such as stainless steel, molybdenum or nickel-based alloy. Further alternatively, in order to prevent oxidation of the heat conductive member 32 under high temperature conditions, a protective layer may be provided on the surface of the heat conductive member 32, such as nickel plating on the surface of the heat conductive member 32. The thickness of the protective layer is, for example, in the range of 10 μm to 30. Mu.m.
In some alternative embodiments, a mounting portion 324 is provided at the bottom of the heat transfer body 321, and a mounting groove 324a is formed on the mounting portion 324; the cooling member 33 includes a cooling pipe for conveying a cooling medium, and the cooling pipe is provided in the mounting groove 324a and ensures good contact with the surface of the mounting groove 324 a. In this way, the cooling medium in the cooling pipe can cool the adsorption disk 20 through the heat conducting member 32 and the heat uniforming member 31. In order to achieve cooling uniformity, the cooling pipe may alternatively be wound in a ring shape along the circumference of the heat transfer body 321. Optionally, two ends of the cooling tube are respectively connected to two external pipelines 34 (only one of which is shown in the figure), and the two external pipelines 34 are used for introducing cooling medium into the cooling tube and recovering the cooling medium in the cooling tube, so as to realize the circulation flow of the cooling medium. Alternatively, the cooling medium may be cooling water, a cooling liquid or a cooling gas, etc., the temperature of the cooling medium being in the range of 20-30 c, for example. Optionally, the connection between the cooling tube and the mounting portion 324 may include welding, crimping, riveting, or the like.
In other alternative embodiments, as shown in fig. 4, the cooling member 33 may further include an annular cover plate 331 sealingly connected to the heat transfer body 321, and a cooling passage 332 formed between a top surface of the annular cover plate 331 and a bottom surface of the heat transfer body 321 for delivering a cooling medium. For example, a cooling concave channel may be formed on the bottom surface of the heat transfer body 321, the cooling concave channel and the top surface of the annular cover plate 331 constituting the cooling channel 332 described above. Alternatively, the cooling passages 332 may extend annularly along the circumference of the heat transfer body 321. Optionally, two ends of the cooling channel 332 are respectively connected to two external pipelines 34 (only one of which is shown in the figure), and the two external pipelines 34 are used for introducing cooling medium into the cooling channel 332 and recovering the cooling medium in the cooling channel 332, so as to realize circulation flow of the cooling medium. Alternatively, the connection between the annular cover 331 and the heat transfer body 321 is, for example, soldering, electron beam, laser, or the like.
In some alternative embodiments, the heat spreader 31 is, for example, a ring-shaped flat plate. Optionally, the connection manner of the heat conducting component 32 and the heat homogenizing element 31 includes welding, crimping, riveting, and the like. The heat spreader 31 serves to prevent a large temperature difference from being generated at the horizontal interface position between the heat conductive member 32 and the adsorption tray 20, so that the adsorption tray 20 can be prevented from being broken, and at the same time, the temperature uniformity of the adsorption tray 20 can be improved. The heat uniforming member 31 is made of metal, ceramic, or composite material with good thermal conductivity, and the metal is made of Al, cu, or the like; the ceramics are, for example, alN, siC, etc.; the composite material is, for example, aluminum-based silicon carbide or the like. If the heat spreader 31 is made of metal, the heat spreader 31 and the heat conductive member 32 may be connected by welding such as soldering, electron beam, or the like in order to achieve reliable contact. Alternatively, in order to prevent the heat spreader 31 from being oxidized at a high temperature, a protective layer may be provided on the heat spreader 31, for example, nickel may be plated on the heat spreader 31, and the protective layer may have a thickness ranging from 10 μm to 30 μm, for example. If the heat spreader 31 is ceramic or a composite material, the heat spreader 31 and the heat conductive member 32 may be fixed together by brazing or the like.
Alternatively, the thin-wall ring 322 shown in FIG. 4 is two. In this case, a positioning protrusion 311 is further provided on the bottom surface of the heat spreader 31, which is disposed between two thin-walled rings 322 for defining the position of the heat spreader 31.
In some alternative embodiments, a layer of thermal interface material (not shown) is provided between the heat spreader 31 and the adsorbent disk 20. Because the heat homogenizing element 31 and the adsorption disc 20 are made of different materials, the heat homogenizing element 31 and the adsorption disc 20 have different thermal expansion coefficients and cannot be directly fixed in a welding mode or the like, in this case, a thermal interface material layer is arranged between the heat homogenizing element 31 and the adsorption disc 20 and has a certain deformability under a pressure condition so as to fill a gap between the heat homogenizing element 31 and the adsorption disc 20, so that the heat homogenizing element 31 and the adsorption disc 20 are always in good contact, and heat conduction between the heat homogenizing element 31 and the adsorption disc 20 is ensured. Optionally, the thermal interface material layer is made of a material which has good high temperature resistance and heat conduction performance and can have a certain deformation capability under a pressure condition, such as graphite, graphene or aluminum foil.
In some alternative embodiments, as shown in fig. 2B and fig. 5, in order to ensure that the heat conducting component 32 and the heat homogenizing element 31 always keep good contact with the adsorption disc 20, so that the thermal interface material layer can fully fill the gap between the heat homogenizing element 31 and the adsorption disc 20, the electrostatic chuck further comprises a fixing component 40 and a tightening component 41, wherein the fixing component 40 is connected to the bottom of the adsorption disc 20, and forms an accommodating space 42 with the bottom of the adsorption disc 20; the heat uniforming member 31, the heat conducting member 32, the cooling member 33, and the tightening assembly 41 are all located in the accommodating space 42; the tightening assembly 41 is located between the bottom surface of the heat conducting member 32 and the top surface of the fixing member 40 opposite to the accommodating space 42, and is used for applying pressure to the heat conducting member 32 toward the adsorption disc 20, that is, tightening the heat conducting member 32 and the heat homogenizing member 31 to the bottom of the adsorption disc 20, so that good contact between the heat conducting member 32 and the heat homogenizing member 31 and the adsorption disc 20 can be ensured all the time, and sufficient heat conduction between the cooling assembly 30 and the adsorption disc 20 can be ensured.
The structure of the tightening assembly 41 may be varied, and in some alternative embodiments, as shown in fig. 5, the tightening assembly 41 includes a stop collar 41a and a plurality of elastic members 41b disposed on the stop collar 41a, and the plurality of elastic members 41b are uniformly distributed along the circumferential direction of the stop collar 41a, so that pressure can be uniformly applied to the heat conducting member 32 in the circumferential direction, and thus the heat conducting member 32 and the respective members above the same can be uniformly stressed. The top surface of the limiting ring 41a contacts with the bottom surface of the heat conducting member 32, and a plurality of elastic members 41b are disposed between the limiting ring 41a and the fixing member 40, for applying pressure to the limiting ring 41a toward the adsorption plate 20 by generating elastic deformation, and by means of the plurality of elastic members 41b, it is ensured that the heat conducting member 32 and the heat homogenizing member 31 are always abutted against the bottom of the adsorption plate 20. Alternatively, the elastic member 41b is a spring, which is in a compressed state between the retainer ring 41a and the fixing member 40. The stopper ring 41a may be made of a metal capable of withstanding high temperatures, such as stainless steel or titanium. Alternatively, in order to prevent elastic failure of the elastic member 41b under a long-term high temperature, the elastic member 41b may be made of a high-temperature resistant alloy, for example, a nickel-based alloy, or the like.
In some alternative embodiments, in order to implement the limitation of the elastic member 41b, as shown in fig. 5, a plurality of mounting holes 41c are formed on the bottom surface of the limitation ring 41a, and the plurality of elastic members 41b are disposed between the bottom surfaces of the plurality of mounting holes 41c and the top surface of the fixing member 40 opposite to the receiving space 42 in a one-to-one correspondence.
In some alternative embodiments, since the electrostatic chuck is required to be located at different positions of the process chamber in the vertical direction, such as a transfer position, a process position, etc., it is required that the electrostatic chuck is liftable and cannot break the vacuum of the process chamber during lifting, for this purpose, as shown in fig. 2A and 2B, a bellows 50 is provided at the bottom of the electrostatic chuck, and is internally nested with a lifting shaft 51, an upper end of the lifting shaft 51 is connected to the electrostatic chuck, a lower end passes through a bottom wall of the process chamber, and extends to the outside of the process chamber to be capable of being connected to an external lifting driving source, the lifting shaft 51 is hollow, and the outgoing cables of the dc electrode 22 and the heating element 23 and the external connection line 34 may pass through the lifting shaft 51 and extend to the outside of the process chamber.
The bellows 50 is telescopic, the upper end of the bellows is in sealing connection with the electrostatic chuck, and the lower end of the bellows is in sealing connection with the bottom wall of the process chamber through the flange 52 and the sealing ring 53, so that an atmosphere space communicated with the outside of the process chamber inside the bellows 50 is isolated from a vacuum space positioned outside the bellows 50 inside the process chamber, and the process chamber is ensured to be in a vacuum state. There are various ways in which bellows 50 can be sealingly connected to an electrostatic chuck,
in some alternative embodiments, the bellows 50 may be sealingly connected to the stationary member 40 as described above, for example, by welding such as electron beam welding, laser welding, or the like. The bellows 50 is usually made of metal, and the adsorption disc 20 is made of ceramic, and the thermal expansion coefficients of the two are greatly different, for example, when the adsorption disc 20 is made of AlN ceramic, the thermal expansion coefficient is usually 4.7X10 -6 about/DEG C, and the bellows 50 is made of stainless steel, the coefficient of thermal expansion is 15X 10 -6 In this case, if stainless steel is directly brazed to AlN ceramic, the stress generated when the welding is completed and cooled to a low temperature may cause chipping of the adsorption disc 20 due to a large difference in thermal expansion coefficients between the two. To avoid this problem, alternatively, the fixing member 40 may be made of an iron-cobalt-nickel alloy (also referred to as KOVAR), which has a thermal expansion coefficient closer to that of ceramic, and is sealed (e.g., soldered) to the adsorption disk 20, so that the adsorption disk 20 is not broken, and the connection between the bellows 50 and the electrostatic chuck is achieved by sealing the bellows 50 to the fixing member 40.
In some alternative embodiments, in order to avoid the ejector pin and enable the ejector pin to pass through the through hole 21, the position where the fixing member 40 is connected to the adsorption disc 20 is located inside the through hole 21, that is, the diameter of the circumference where the connection position is located is smaller than the diameter of the circumference where the through hole 21 is located.
In summary, in the carrying device provided by the embodiment of the invention, the cooling component is used for cooling the adsorption disc sequentially through the heat conducting component and the heat homogenizing component, and the heat conducting component is used for controlling the heat quantity conducted between the cooling component and the heat homogenizing component, so that the problem that the electrostatic chuck cannot rise to a higher temperature due to the excessively high cooling speed of the water-cooled disc in the prior art can be solved, and the carrying device can be suitable for a process with a high temperature requirement on the electrostatic chuck.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, taking the PVD apparatus shown in fig. 6 as an example, which includes a process chamber 100 and a carrying device 101 disposed in the process chamber 100, where the carrying device 101 adopts the carrying device provided in the foregoing embodiment of the present invention.
Specifically, the PVD apparatus further includes a target 104 disposed at the top of the process chamber 100, a magnetron 106 disposed above the target 104, an air inlet device 108, and a vacuum pumping device 107, wherein the target 104 is electrically connected to a dc power supply 105; the air intake device 108 includes an air intake pipe and a flow control valve and an on-off valve provided on the air intake pipe. Before performing the PVD process, the process chamber 100 needs to be evacuated to a high vacuum state by the evacuation device 107. Then, a process gas, which may be an inert gas such as argon, is introduced into the process chamber 100 through the gas inlet means 108, the flow rate of which is controlled by a mass flow meter installed in the chamber, and the switching of which is performed through a flow control valve. In addition, the direct current electrode in the electrostatic chuck, the outgoing cable of the heating element and the external pipeline of the cooling component can all pass through the lifting shaft to extend to the outside of the process chamber, wherein the outgoing cable of the heating element is electrically connected with an external alternating current power supply 109; the outgoing cable of the direct current electrode is electrically connected with an external direct current power supply 103; the external piping of the cooling unit is connected to the heat exchanger 102.
In practical applications, the semiconductor process apparatus provided in the embodiment of the present invention may also be applied to etching (etching) processes, chemical vapor deposition (Chemical Vapor Deposition, CVD) processes, ion implantation processes, and the like.
The semiconductor process equipment provided by the embodiment of the invention can solve the problem that the electrostatic chuck cannot rise to higher temperature due to the excessively high cooling speed of the water-cooled disc in the prior art by adopting the bearing device provided by the embodiment of the invention, so that the semiconductor process equipment can be suitable for processes with high temperature requirements on the electrostatic chuck; meanwhile, the problem of uneven heating of the electrostatic chuck caused by overlarge temperature difference between the water-cooled disc and the electrostatic chuck in the prior art can be solved, and the process uniformity is improved.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (15)
1. A bearing device for semiconductor equipment is characterized by comprising an adsorption disk for bearing wafers to be processed, a DC electrode and a heating element which are arranged in the adsorption disk, and an outgoing cable, a cooling component and a heat conducting component of the DC electrode which are arranged at the bottom of the adsorption disk,
the heat conducting component is positioned between the adsorption disc and the cooling component;
the cooling component is used for cooling the adsorption disc through the heat conduction component;
the heat conduction component is used for controlling the heat conduction rate between the cooling component and the adsorption disk so as to avoid the excessive cooling speed of the bearing device;
the heat conduction component adopts a thin-wall structure, and the heat conduction rate is controlled by setting parameters related to heat conduction of the thin-wall structure;
the parameters comprise the number of thin walls contained in the thin-wall structure, and/or the size of the thin-wall structure in the axial direction of the adsorption disc, and/or the cross-sectional area of the thin-wall structure in the radial direction of the adsorption disc;
the thin-wall structure comprises a ring-shaped heat transfer body and at least one thin-wall ring arranged on the heat transfer body; one end of the thin-wall ring is connected with the heat transfer body, and the other end of the thin-wall ring is connected with the adsorption disc;
the cooling component is connected with the heat transfer body.
2. The carrying device according to claim 1, wherein an end of each thin-walled ring connected to the adsorption disk is provided with an annular boss; the radial width of the annular boss is greater than the radial width of the thin wall ring.
3. The carrier according to claim 1, wherein a mounting portion is provided at a bottom of the heat transfer body, the mounting portion being formed with a mounting groove thereon;
the cooling component comprises a cooling pipe for conveying a cooling medium, and the cooling pipe is arranged in the mounting groove.
4. The carrier of claim 1, wherein the cooling member comprises an annular cover plate sealingly connected to the heat transfer body and a cooling channel formed between a top surface of the annular cover plate and a bottom surface of the heat transfer body for delivering a cooling medium.
5. The carrier as claimed in any one of claims 1 to 4, further comprising a heat spreader connected between the adsorption plate and the heat conductive member, the heat spreader for improving uniformity of heat conduction.
6. The carrier of claim 5, wherein a thermal interface material layer is disposed between the heat spreader and the adsorbent disk.
7. The carrier of claim 6, wherein the thermal interface material layer comprises graphite, graphene, or aluminum foil.
8. The carrier of any one of claims 1-4, further comprising a securing member and a tightening assembly, wherein the securing member is connected to the bottom of the adsorption disk and circumscribes the bottom of the adsorption disk to form an accommodation space; the heat conducting component, the cooling component and the propping assembly are all positioned in the accommodating space;
the jacking assembly is located between the heat conducting component and the fixing component and is used for applying pressure towards the adsorption disc to the heat conducting component.
9. The carrier of claim 8, wherein the adsorption disk is ceramic and the fixing member is made of iron-cobalt-nickel alloy.
10. The carrier of claim 8, wherein the tightening assembly comprises a stop collar and a plurality of elastic members disposed on the stop collar, and wherein the plurality of elastic members are uniformly distributed along a circumferential direction of the stop collar;
the top surface of the limiting ring is contacted with the bottom surface of the heat conducting component;
the elastic pieces are arranged between the limiting ring and the fixing part and are used for applying pressure towards the adsorption disc to the limiting ring through elastic deformation.
11. The carrier as claimed in claim 10, wherein a plurality of mounting holes are formed in a bottom surface of the retainer ring, and the plurality of elastic members are disposed in the plurality of mounting holes in one-to-one correspondence.
12. The carrier of claim 1, wherein the thermally conductive member comprises a stainless steel, molybdenum, or nickel-based alloy.
13. The carrier of claim 5, wherein the thermally conductive member is connected to the heat spreader by welding, crimping, or riveting.
14. A carrier according to claim 3, wherein the connection of the cooling tube to the mounting portion comprises welding, crimping or riveting.
15. A semiconductor processing apparatus comprising a process chamber and a carrier disposed in the process chamber, wherein the carrier employs the carrier of any one of claims 1-14.
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| CN202211041186.6A CN115410978B (en) | 2022-08-29 | 2022-08-29 | Electrostatic chuck and semiconductor processing apparatus |
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| CN202211041186.6A CN115410978B (en) | 2022-08-29 | 2022-08-29 | Electrostatic chuck and semiconductor processing apparatus |
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| CN115410978B true CN115410978B (en) | 2023-08-18 |
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| CN110484897A (en) * | 2018-05-14 | 2019-11-22 | 北京北方华创微电子装备有限公司 | Chip register and semiconductor equipment |
| JP2020080365A (en) * | 2018-11-13 | 2020-05-28 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Wafer stage, semiconductor manufacturing apparatus, and wafer stage manufacturing method |
| CN212991072U (en) * | 2021-02-22 | 2021-04-16 | 北京中硅泰克精密技术有限公司 | Semiconductor process equipment and bearing device thereof |
| CN114446833A (en) * | 2022-01-25 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor process equipment |
| TWM630904U (en) * | 2020-10-26 | 2022-08-21 | 大陸商北京北方華創微電子裝備有限公司 | Wafer carrying mechanism and semiconductor process equipment |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110484897A (en) * | 2018-05-14 | 2019-11-22 | 北京北方华创微电子装备有限公司 | Chip register and semiconductor equipment |
| JP2020080365A (en) * | 2018-11-13 | 2020-05-28 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | Wafer stage, semiconductor manufacturing apparatus, and wafer stage manufacturing method |
| TWM630904U (en) * | 2020-10-26 | 2022-08-21 | 大陸商北京北方華創微電子裝備有限公司 | Wafer carrying mechanism and semiconductor process equipment |
| CN212991072U (en) * | 2021-02-22 | 2021-04-16 | 北京中硅泰克精密技术有限公司 | Semiconductor process equipment and bearing device thereof |
| CN114446833A (en) * | 2022-01-25 | 2022-05-06 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor process equipment |
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