Summary of the invention
The invention provides a kind of drive circuit and light-emitting device thereof of light-emitting diode, too high driving voltage VDR can be avoided to burn light-emitting diode.
The drive circuit of light-emitting diode of the present invention, in order to drive at least one light-emitting diode, and comprises a rectification circuit, one first resistance, one first switch and one first control unit.Rectification circuit receives an AC power to provide a driving voltage to light-emitting diode.One end of first resistance couples light-emitting diode.First switch has a first end, one second end and a control end, and wherein the first end of the first switch couples the other end of the first resistance, and the second end of the first switch couples an earthed voltage.Whether the first control unit couples the control end of the first switch, with the voltage level according to driving voltage higher than one first critical voltage conducting first switch or closedown the first switch.
Light-emitting device of the present invention, comprises the drive circuit of at least one light-emitting diode and above-mentioned light-emitting diode.
In one embodiment of this invention, when the voltage level of driving voltage is more than or equal to the first critical voltage, the first control unit closes the first switch, when the voltage level of driving voltage is less than the first critical voltage, and conducting first switch.
In one embodiment of this invention, the drive circuit of light-emitting diode also comprises one second resistance, a second switch and one second control unit.One end of second resistance couples light-emitting diode.Second switch has a first end, one second end and a control end, and wherein the first end of second switch couples the other end of the second resistance, and the second end of second switch couples earthed voltage.Whether the second control unit couples the control end of second switch, with the voltage level according to driving voltage higher than one second critical voltage conducting second switch or closedown second switch.
In one embodiment of this invention, when the voltage level of driving voltage is more than or equal to the second critical voltage, the second control unit closes second switch, when the voltage level of driving voltage is less than the second critical voltage, and conducting second switch.
In one embodiment of this invention, the drive circuit of light-emitting diode also comprises a voltage feedback unit, feedback reference voltage to the first control unit and the second control unit is provided with the voltage level according to driving voltage, according to feedback reference voltage, first control unit judges that whether the voltage level of driving voltage is higher than the first critical voltage, the second control unit foundation feedback reference voltage is to judge that whether the voltage level of driving voltage is higher than the second critical voltage.
In one embodiment of this invention, voltage feedback unit receives driving voltage to provide feedback reference voltage.
In one embodiment of this invention, voltage feedback unit comprises one first diode and one first electric capacity.The anode of the first diode receives driving voltage, and its negative electrode provides feedback reference voltage.Between the negative electrode that first electric capacity is coupled to the first diode and earthed voltage.
In one embodiment of this invention, voltage feedback unit receives the feedback voltage that the first resistance provides, to provide feedback reference voltage.
In one embodiment of this invention, voltage feedback unit comprises the second diode and the second electric capacity.The anode of the second diode receives feedback voltage, and its negative electrode provides feedback reference voltage.Second electric capacity is coupled between the negative electrode of diode and earthed voltage.
In one embodiment of this invention, the drive circuit of light-emitting diode also comprises a voltage voltage regulation unit, is coupled between voltage feedback unit and feedback voltage, in order to the noise of filtering feedback voltage.
In one embodiment of this invention, voltage voltage regulation unit comprises the 3rd resistance, the 3rd electric capacity and the second diode.3rd resistance is coupled between driving voltage and voltage feedback unit.3rd Capacitance parallel connection is coupled to three resistance.The anode of the second diode couples the 3rd resistance and voltage feedback unit, and its negative electrode couples feedback voltage.
In one embodiment of this invention, the first control unit and the second control unit comprise a transistor one voltage judging unit, one first divider resistance, one second divider resistance, an end points resistance and a voltage limiting element respectively.Transistor has a first end, one second end and a control end, and wherein the first end of transistor couples the control end of the first switch or the control end of second switch, and the second end of transistor couples earthed voltage.Voltage judging unit receives feedback reference voltage, to judge whether driving voltage is more than or equal to the first critical voltage or the second critical voltage according to feedback reference voltage, and presents conducting or closedown accordingly.First divider resistance is coupled between voltage judging unit and the control end of transistor.Second divider resistance is coupled between the control end of transistor and earthed voltage.End points resistance is coupled between the first end of transistor and feedback reference voltage.Voltage limiting element is coupled between the first end of transistor and earthed voltage.
In one embodiment of this invention, voltage judging unit comprises at least one Zener (Zenner) diode.
In one embodiment of this invention, the voltage level of driving voltage is along with time fluctuation.
Based on above-mentioned, the drive circuit of the light-emitting diode of the embodiment of the present invention and light-emitting device thereof, it is connected in series the first resistance and the first switch, and whether determines conducting first switch according to driving voltage.Whereby, too high driving voltage can be avoided to burn light-emitting diode.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Figure 1A is the system schematic of the light-emitting device of first embodiment of the invention;
Figure 1B is the power curve schematic diagram of the light-emitting device of first embodiment of the invention;
Fig. 1 C is the system schematic of the light-emitting device of second embodiment of the invention;
Fig. 1 D is the system schematic of the light-emitting device of third embodiment of the invention;
Fig. 1 E is the system schematic of the light-emitting device of fourth embodiment of the invention;
Fig. 2 A is the system schematic of the light-emitting device of fifth embodiment of the invention;
Fig. 2 B is the power curve schematic diagram of the light-emitting device of fifth embodiment of the invention;
Fig. 2 C is the system schematic of the light-emitting device of sixth embodiment of the invention;
Fig. 2 D is the system schematic of the light-emitting device of seventh embodiment of the invention;
Fig. 2 E is the system schematic of the light-emitting device of eighth embodiment of the invention.
Description of reference numerals:
100,100a ~ 100c, 200,200a ~ 200c: light-emitting device;
110,110a ~ 110c, 210,210a ~ 210c: drive circuit;
111: rectification circuit;
113, the 113a, 113b, 113c: first control unit;
115, the 115a: the first switch;
117,117a, 117b: voltage feedback unit;
119,217: voltage judging unit;
211, the 211a: the second control unit;
213,213a: second switch;
215,215a: voltage voltage regulation unit;
C1, C2: electric capacity;
D1, D2: diode;
DZ1 ~ DZ5: Zener diode;
LD_1 ~ LD_n: light-emitting diode;
M1, M2:MOS transistor;
R1: the first resistance;
R2: the second resistance;
R3: the three resistance;
RD1, RD3: the first divider resistance;
RD2, RD4: the second divider resistance;
RT1, RT2: end points resistance;
S1, S21 ~ S23: curve;
T1, T2: junction transistor;
VAC: AC power;
VDR: driving voltage;
VFB, VFBa: feedback voltage;
VRF: feedback reference voltage;
VTH1, VTH11: the first critical voltage;
VTH12: the second critical voltage.
Embodiment
Figure 1A is the system schematic of the light-emitting device of first embodiment of the invention.Please refer to Figure 1A, in the present embodiment, light-emitting device 100 comprises light-emitting diode LD_1 ~ LD_n and drives the drive circuit 110 of light-emitting diode, wherein n be more than or equal to 1 positive integer, and drive circuit 110 at least comprises rectification circuit 111, first resistance R1, the first control unit 113 and the first switch 115.
Rectification circuit 111 receives AC power VAC to provide driving voltage VDR to light-emitting diode LD_1 ~ LD_n, wherein rectification circuit 111 can be full-wave rectifying circuit or half-wave rectifying circuit, and the voltage level of driving voltage VDR is along with time fluctuation, that is driving voltage VDR is not the direct voltage with fixed level.
One end of first resistance R1 couples the negative electrode of light-emitting diode LD_n, and the other end of the first resistance R1 couples the first switch 115.The first end of the first switch 115 couples the other end of the first resistance R1, and the second end of the first switch 115 couples earthed voltage.First control unit 113 couples the control end of the first switch 115, and receives driving voltage VDR.When the voltage level of driving voltage VDR is more than or equal to the first critical voltage, the first control unit 113 closes the first switch 115, cannot flow through light-emitting diode LD_1 ~ LD_n to make electric current; When the voltage level of driving voltage VDR is less than the first critical voltage, the first control unit 113 conducting first switch 115, can flow through light-emitting diode LD_1 ~ LD_n to make electric current.Whereby, too high driving voltage VDR can be avoided to burn light-emitting diode LD_1 ~ LD_n.
Figure 1B is the power curve schematic diagram of the light-emitting device of first embodiment of the invention.Please refer to Figure 1A and Figure 1B, wherein curve S 1 is depicted as the corresponding relation of the crest voltage of performance number corresponding to resistance R1 and driving voltage VDR, and wherein performance number can be considered as being the mapping of current value.In the present embodiment, when the peak value of driving voltage VDR is higher, the performance number of driving voltage VDR entirety can be higher.When the peak value of driving voltage VDR is higher than the first critical voltage VTH1, the driving voltage VDR of part can be truncated because of the closedown of the first switch 115, so that the overall power value of driving voltage VDR can decline, and when driving voltage VDR peak value is higher, the part be truncated by driving voltage VDR can be more so that the overall power value of driving voltage VDR can decline more.
Fig. 1 C is the system schematic of the light-emitting device of second embodiment of the invention.Please refer to Figure 1A and Fig. 1 C, wherein same or similar element uses same or similar label, and light-emitting device 100a is approximately identical to light-emitting device 100, and its difference is the first control unit 113a of drive circuit 110a.In the present embodiment, the first control unit 113a receives the feedback voltage V FB that the first resistance R1 provides.Due to fixing pressure reduction (i.e. light-emitting diode LD_1 ~ LD_n produce pressure drop) can be had between feedback voltage V FB and driving voltage VDR, that is the voltage level variation of feedback voltage V FB also represents the voltage level variation of driving voltage VDR, therefore the first control unit 113a can judge that whether the voltage level of driving voltage VDR is higher than the first critical voltage whereby, and then according to judged result conducting first switch 115 or closedown the first switch 115.
Fig. 1 D is the system schematic of the light-emitting device of third embodiment of the invention.Please refer to Figure 1A and Fig. 1 D, wherein same or similar element uses same or similar label, and light-emitting device 100b is approximately identical to light-emitting device 100, and its difference is the voltage feedback unit 117 that drive circuit 110b also comprises.In the present embodiment, voltage feedback unit 117 receives driving voltage VDR, to provide feedback reference voltage VRF to the first control unit 113b according to the voltage level of driving voltage VDR, and according to feedback reference voltage VRF, the first control unit 113b can judge that whether the voltage level of driving voltage VDR is higher than the first critical voltage, and then according to judged result conducting first switch 115 or closedown the first switch 115.
Fig. 1 E is the system schematic of the light-emitting device of fourth embodiment of the invention.Please refer to Fig. 1 D and Fig. 1 E, wherein same or similar element uses same or similar label, and light-emitting device 100c is approximately identical to light-emitting device 100b, and its difference is the voltage feedback unit 117a of drive circuit 110c.In the present embodiment, voltage feedback unit 117a receives the feedback voltage V FB that the first resistance R1 provides, and to judge the voltage level variation of driving voltage VDR, and then provides feedback reference voltage VRF.Due to fixing pressure reduction (i.e. light-emitting diode LD_1 ~ LD_n produce pressure drop) can be had between feedback voltage V FB and driving voltage VDR, that is the voltage level variation of feedback voltage V FB also represents the voltage level variation of driving voltage VDR, the feedback voltage V FB that therefore voltage feedback unit 117a provides also can react the voltage level variation of driving voltage VDR.Accordingly, by feedback reference voltage VRF, the first control unit 113a judges that whether the voltage level of driving voltage VDR is higher than the first critical voltage, and then according to judged result conducting first switch 115 or closedown the first switch 115.
Fig. 2 A is the system schematic of the light-emitting device of fifth embodiment of the invention.Please refer to Fig. 1 D and Fig. 2 A, wherein same or similar element uses same or similar label, and light-emitting device 200 and light-emitting device 100b difference are that drive circuit 210 also comprises the second resistance R2, the second control unit 211 and second switch 213.One end of second resistance R2 couples the negative electrode of light-emitting diode LD_n, and the other end of the second resistance R2 couples second switch 213.The first end of second switch 213 couples the other end of the second resistance R2, and the second end of second switch 213 couples earthed voltage.Second control unit 213 couples the control end of second switch 213, and couple voltage feedback unit 117a to receive feedback reference voltage VRF, wherein by feedback reference voltage VRF, the second control unit 213 judges that whether the voltage level of driving voltage VDR is higher than the second critical voltage, and then according to judged result conducting second switch 213 or closedown second switch 213.In other words, when the voltage level of driving voltage VDR is more than or equal to the second critical voltage, the second control unit 211 closes second switch 213; When the voltage level of driving voltage VDR is less than the second critical voltage, the second control unit 211 conducting second switch 213.
Wherein, first critical voltage (as VTH1) of the first control unit 113b can be different from the second critical voltage of the second control unit 211, and the resistance value of the first resistance R1 can be different from the resistance value of the second resistance R2.
Fig. 2 B is the power curve schematic diagram of the light-emitting device of fifth embodiment of the invention.Please refer to Fig. 2 A and Fig. 2 B, wherein curve S 21 is depicted as the corresponding relation of the crest voltage of performance number corresponding to resistance R1 and driving voltage VDR, curve S 22 is depicted as the corresponding relation of the crest voltage of performance number corresponding to resistance R2 and driving voltage VDR, curve S 23 is depicted as the corresponding relation of the performance number of driving voltage VDR entirety and the crest voltage of driving voltage VDR, and wherein performance number can be considered as being the mapping of current value.
In the present embodiment, when the peak value of driving voltage VDR is higher, the performance number of driving voltage VDR entirety can be higher.When the peak value of driving voltage VDR is higher than the first critical voltage VTH11, the driving voltage VDR of part can cannot be provided to the first resistance R1 because of the closedown of the first switch 115, so that performance number corresponding to resistance R1 can decline, and when driving voltage VDR peak value is higher, the part be truncated by driving voltage VDR can be more so that performance number corresponding to resistance R1 can decline more.When the peak value of driving voltage VDR is higher than the second critical voltage VTH12, the driving voltage VDR of part can cannot be provided to the second resistance R2 because of the closedown of second switch 213, so that performance number corresponding to resistance R1 can decline, and when driving voltage VDR peak value is higher, the part be truncated by driving voltage VDR can be more so that performance number corresponding to resistance R2 can decline more.
The combination of curve S 21 and S22 is as shown in curve S 23, as curve S 23 is shown, performance number between the first critical voltage VTH11 to the second critical voltage VTH12 can maintain a fixed value, that is between the first critical voltage VTH11 to the second critical voltage VTH12, drive circuit 210 can be considered a constant current source, and wherein the current value of constant current source can pass through adjustment first resistance R1 and the second resistance R2 sets.
Fig. 2 C is the system schematic of the light-emitting device of sixth embodiment of the invention.Please refer to Fig. 2 A and Fig. 2 C, wherein same or similar element uses same or similar label, and light-emitting device 200a is approximately identical to light-emitting device 200, its difference is voltage voltage regulation unit 215 and the voltage feedback unit 117a of drive circuit 210a, and wherein voltage feedback unit 117a can refer to shown in Fig. 1 E embodiment.In the present embodiment, voltage voltage regulation unit 215 is coupled between voltage feedback unit 117a and feedback voltage V FB, provides feedback voltage V FBa to voltage feedback unit 117a after the noise in order to filtering feedback voltage V FB.
Fig. 2 D is the system schematic of the light-emitting device of seventh embodiment of the invention.Please refer to Fig. 2 A and Fig. 2 D, wherein same or similar element uses same or similar label, and Fig. 2 D can be considered the circuit diagram of Fig. 2 A, that is the drive circuit 210b of light-emitting device 200c can be considered the circuit diagram of drive circuit 210.Voltage feedback unit 117b comprises diode D1 and electric capacity C1.The anode of diode D1 receives driving voltage VDR, and the negative electrode of diode D1 provides feedback reference voltage VRF.Between the negative electrode that electric capacity C1 is coupled to diode D1 and earthed voltage.First switch 115a comprises MOS transistor M1, and wherein the drain electrode of transistor M1 couples the first resistance R1, and the source electrode of transistor M1 couples earthed voltage.
First control unit 113c comprises junction transistor (BJT) T1, voltage judging unit 119, first divider resistance RD1, the second divider resistance RD2, end points resistance RT1 and voltage limiting element (as Zener diode DZ2), and wherein voltage judging unit 119 such as comprises single Zener diode DZ1.
Voltage judging unit 119 receives feedback reference voltage VRF, to judge whether driving voltage VDR is more than or equal to the first critical voltage according to feedback reference voltage VRF, and present conducting or closedown accordingly, that is determine whether provide voltage to the first divider resistance RD1.Furthermore, Zener diode DZ1 is coupled between feedback reference voltage VRF and the first divider resistance RD1.
First divider resistance RD1 is coupled between the base stage of voltage judging unit 119 and junction transistor T1.Between the base stage that second divider resistance RD2 is coupled to junction transistor T1 and earthed voltage.End points resistance RT1 is coupled between the collector of junction transistor T1 and feedback reference voltage VRF.Between the collector that Zener diode DZ2 is coupled to junction transistor T1 and earthed voltage.The collector of junction transistor T1 is coupled to the grid of transistor M1, and the emitter-base bandgap grading of junction transistor T1 couples earthed voltage.
Second switch 213a comprises MOS transistor M2, and wherein the drain electrode of transistor M2 couples the second resistance R2, and the source electrode of transistor M2 couples earthed voltage.Second control unit 211a comprises junction transistor T2, voltage judging unit 217, first divider resistance RD3, the second divider resistance RD4, end points resistance RT2 and voltage limiting element (as Zener diode DZ5), and wherein voltage judging unit 217 such as comprises at least one Zener diode DZ3 (and or adding DZ4).
Voltage judging unit 217 receives feedback reference voltage VRF, to judge whether driving voltage VDR is more than or equal to the second critical voltage according to feedback reference voltage VRF, and present conducting or closedown accordingly, that is determine whether provide voltage to the first divider resistance RD3.Furthermore, Zener diode DZ3 (and or adding DZ4) is serially connected with between feedback reference voltage VRF and the first divider resistance RD3.
First divider resistance RD3 is coupled between the base stage of voltage judging unit 217 and junction transistor T2.Between the base stage that second divider resistance RD4 is coupled to junction transistor T2 and earthed voltage.End points resistance RT2 is coupled between the collector of junction transistor T2 and feedback reference voltage VRF.Between the collector that Zener diode DZ5 is coupled to junction transistor T2 and earthed voltage.The collector of junction transistor T2 is coupled to the grid of transistor M2, and the emitter-base bandgap grading of junction transistor T2 couples earthed voltage.
According to above-mentioned, the embodiment of the present invention has the effect of constant current source, but is different from traditional constant current source, the element that the embodiment of the present invention does not use negative electricity resistive, therefore can avoid the noise that circuit oscillation produces.
Fig. 2 E is the system schematic of the light-emitting device of eighth embodiment of the invention.Please refer to Fig. 2 B to Fig. 2 E, wherein same or similar element uses same or similar label, and Fig. 2 E can be considered the circuit diagram of Fig. 2 B, that is the drive circuit 210c of light-emitting device 200c can be considered the circuit diagram of drive circuit 210a.In the present embodiment, drive circuit 210c also comprises voltage voltage regulation unit 215a, and wherein voltage voltage regulation unit 215a comprises the 3rd resistance R3, electric capacity C2 and diode D2.
3rd resistance R3 is coupled between driving voltage VDR and voltage feedback unit 117b.Electric capacity C2 coupled in parallel is in the 3rd resistance R3.The anode of diode D2 couples the 3rd resistance R3 and voltage feedback unit 117b, and to provide the feedback voltage V FBa after filtration, the negative electrode of diode D2 couples feedback voltage V FB.
In the embodiment of above-mentioned Fig. 2 A to Fig. 2 E, for two-way current path (that is the first resistance R1 and first switch 115 of serial connection and the second resistance R2 be connected in series and second switch 213), but in other embodiments, also extend to Multi-path electricity flow path, determine galvanic areas with what provide wider voltage range.
Above-mentioned switch element (as the first switch 115, second switch 213) is with N-type Metal-oxide-semicondutor (N-Mental-Oxide-Semiconductor, be called for short NMOS) be embodiment, only can (positivechannelMetalOxideSemiconductor during application, be called for short PMOS) or the element such as bipolar junction transistor (BipolarJunctionTransistor, be called for short BJT) replace it; The control switch (as transistor T1, T2) of control unit take NPNBJT as embodiment, only also can replace it by the element such as PNPBJT or MOS during application.
In sum, the drive circuit of the light-emitting diode of the embodiment of the present invention and light-emitting device thereof, its series resistor and switch, and whether determine actuating switch according to driving voltage.Whereby, too high driving voltage can be avoided to burn light-emitting diode.Further, by organizing resistance and the switch of serial connection more, simulate and determine circuit source, and circuit can be avoided to produce vibration.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.