CN105515392B - A kind of DC-DC voltage boosting translation circuit - Google Patents
A kind of DC-DC voltage boosting translation circuit Download PDFInfo
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- CN105515392B CN105515392B CN201511000295.3A CN201511000295A CN105515392B CN 105515392 B CN105515392 B CN 105515392B CN 201511000295 A CN201511000295 A CN 201511000295A CN 105515392 B CN105515392 B CN 105515392B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33561—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having more than one ouput with independent control
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- Dc-Dc Converters (AREA)
Abstract
The embodiment of the invention discloses a kind of DC DC boost conversion circuits, including input power Vin, input filter capacitor C1, power switch tube S 1 and its body diode D1 in parallel, output filter capacitor C2, output loading R1, wherein the source electrode of power switch tube S 1 is connected with the cathode of input power Vin, and anode, the cathode of body diode D1 are connected respectively with the source electrode of power switch tube S 1, drain electrode；DC DC boost conversion circuit further includes the first Boost power inductances L1 and rectifier diode D2, first Boost power inductances L1 is connected with the drain electrode of the anode and power switch tube S 1 of input power Vin, and drain electrodes and output voltage of the rectifier diode D2 with power switch tube S 1 are connected；It is characterized in that, DC DC boost conversion circuit further includes the 2nd Boost power inductance L2, the 2nd Boost power inductances L2 is connected with the drain electrode of power switch tube S 1 and the anode of rectifier diode D2.The booster converter of the present invention can realize the high-gain of voltage, improve the work efficiency of converter.
Description
Technical field
The present invention relates to power electronics field more particularly to a kind of DC-DC voltage boosting translation circuits.
Background technology
Traditional DC-DC voltage boosting converter include a power switch pipe, a Boost power inductance, one it is whole
Flow diode；The drain electrode of power switch pipe is connected with one end of Boost power inductances and the anode of rectifier diode, Boost work(
Another anode for being connected to input power of rate inductance.
This traditional DC-DC voltage boosting converter can realize boost function, but the voltage gain exported is smaller, and
The ratio of output voltage and input voltage is：Vout:Vin=1:(1-D), wherein, D is duty cycle.It although can be by setting more
Big duty cycle obtains higher output voltage, but the other factors in Boost power inductances and circuit show output
Voltage further improves, also, when duty cycle increases to a certain extent, there is also the feelings that output voltage declines instead
Condition.Which limits traditional this DC-DC voltage boosting converters can not realize high-gain, ask there are transducer effciency is low
Topic.
The content of the invention
Based on this, in order to solve can not to realize high-gain in traditional technology existing for DC-DC voltage boosting converter, exist
The technical issues of transducer effciency is low, the present invention provides a kind of DC-DC voltage boosting translation circuits.
A kind of DC-DC voltage boosting translation circuit is opened including input power Vin in parallel, input filter capacitor C1, power
Pipe S1 and its body diode D1, output filter capacitor C2, output loading R1 are closed, wherein the source electrode of the power switch tube S 1 and institute
The cathode for stating input power Vin is connected, the anode of the body diode D1, the cathode source with the power switch tube S 1 respectively
Pole, drain electrode are connected；
The DC-DC voltage boosting translation circuit further includes the first Boost power inductances L1 and rectifier diode D2, described
First Boost power inductances L1 is connected with the drain electrode of the anode and the power switch tube S 1 of the input power Vin, described whole
Drain electrodes and the output voltage of the diode D2 with the power switch tube S 1 is flowed to be connected；
It is characterized in that, DC-DC voltage boosting translation circuit further includes the 2nd Boost power inductance L2, described second
Boost power inductances L2 is connected with the drain electrode of the power switch tube S 1 and the anode of the rectifier diode D2.
Further, the first Boost power inductances L1 and the 2nd Boost power inductances L2 organization center taps
Inductance.
Optionally, the DC-DC voltage boosting translation circuit further includes the suctions of the first absorption diode Ds1 and second of series connection
Diode Ds2 is received, and the cathode of the first absorption diode Ds1 is connected with the anode of the input power Vin, described second
The anode of absorption diode Ds2 is connected with the cathode of the input power Vin；
The DC-DC voltage boosting translation circuit further includes the first Absorption Capacitance Cs1, the first Absorption Capacitance Cs1's
One end is connected with the anode of the first absorption diode Ds1, and the other end of the first Absorption Capacitance Cs1 is opened with the power
The drain electrode for closing pipe S1 is connected.
Optionally, the DC-DC voltage boosting translation circuit further includes the suctions of the 3rd absorption diode Ds3 and the 4th of series connection
Diode Ds4 is received, and the cathode of the 3rd absorption diode Ds3 is connected with the drain electrode of the power switch tube S 1, described the
The anode of four absorption diode Ds4 is connected with the source electrode of the power switch tube S 1；
The DC-DC voltage boosting translation circuit further includes the second Absorption Capacitance Cs2, the second Absorption Capacitance Cs2's
One end is connected with the anode of the 3rd absorption diode Ds3, the other end and the rectification two of the second Absorption Capacitance Cs2
The anode of pole pipe D2 is connected.
Optionally, the DC-DC voltage boosting translation circuit further includes the suctions of the 5th absorption diode Ds5 and the 6th of series connection
Diode Ds6 is received, and the anode of the 5th absorption diode Ds5 is connected with the anode of the rectifier diode D2, described the
The cathode of six absorption diode Ds6 is connected with the cathode of the rectifier diode D2；
The DC-DC voltage boosting translation circuit further includes the 3rd Absorption Capacitance Cs3, the 3rd Absorption Capacitance Cs3's
One end is connected with the cathode of the 5th absorption diode Ds5, the other end of the 3rd Absorption Capacitance Cs3 and the input electricity
The anode of source Vin is connected.
It, will be with following advantageous effect using the embodiment of the present invention：
DC-DC voltage boosting translation circuit in the present invention by the DC-DC voltage boosting in traditional technology by converting electricity
A Boost power inductance in road is substituted for the centre cap inductance being made of two Boost power inductances, improves output
The ratio of gains of voltage and input voltage improves the work efficiency of converter.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention, for those of ordinary skill in the art, without creative efforts, can be with
Other attached drawings are obtained according to these attached drawings.
Wherein：
Fig. 1 is a kind of structure diagram of DC-DC voltage boosting translation circuit in one embodiment；
Fig. 2 is a kind of structure diagram of DC-DC voltage boosting translation circuit in another embodiment；
Fig. 3 is a kind of structure diagram of DC-DC voltage boosting translation circuit in another embodiment；
Fig. 4 is a kind of structure diagram of DC-DC voltage boosting translation circuit in another embodiment.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment belongs to the scope of protection of the invention.
In order to solve can not to realize high-gain in traditional technology existing for DC-DC voltage boosting converter, there are converters
The technical issues of efficiency is low in the present embodiment, has provided a kind of DC-DC voltage boosting translation circuit, below in conjunction with figure
1- Fig. 4 is specifically described.
Referring to Fig. 1, Fig. 1 illustrates a kind of structure diagram of DC-DC voltage boosting translation circuit, including input in parallel
Power supply Vin, input filter capacitor C1, power switch tube S 1 and its body diode D1, output filter capacitor C2, output loading R1；
Wherein the source electrode of power switch tube S 1 is connected with the cathode of input power Vin, the anode of body diode D1, cathode respectively with power
The source electrode of switching tube S1, drain electrode are connected；Above-mentioned converter further includes the first Boost power inductances L1 and rectifier diode D2, the
One Boost power inductances L1 is connected with the drain electrode of the anode and power switch tube S 1 of input power Vin, rectifier diode D2 and work(
The drain electrode of rate switching tube S1 is connected with output voltage；The feature of foregoing description is traditional DC-DC voltage boosting translation circuit
The feature having, in the present embodiment, as shown in Figure 1, above-mentioned DC-DC voltage boosting translation circuit further includes the 2nd Boost work(
Rate inductance L2, the 2nd Boost power inductances L2 are connected with the drain electrode of power switch tube S 1 and the anode of rectifier diode D2.
In the present embodiment, above-mentioned first Boost power inductances L1 and the 2nd Boost power inductance L2 organization center taps
Inductance.
Above-mentioned by the straight of the first Boost power inductances L1 and the 2nd Boost power inductance L2 organization center tap inductors
In stream-DC boosting translation circuit, if the number of turn of the first Boost power inductances L1 is N1, the circle of the 2nd Boost power inductances L2
Number is N2=N × N1.
When power switch tube S 1 turns on, in input power Vin, the first Boost power inductances L1 and power switch tube S 1
Between form current path, rectifier diode D2 does not have electric current to pass through the first Boost power inductance L1 charging energy-storings.At this point, the
The voltage at one Boost power inductance L1 both ends is：VL1-on=Vin。
When power switch tube S 1 disconnects, rectifier diode D2 is turned on, the first Boost power inductances L1 and the 2nd Boost
Power inductance L2 discharges.At this point, the voltage at the first Boost power inductance L1 both ends is：
VL1-off=Vin-VL2-Vout。
According to the relation of the first Boost power inductances L1 and the voltage at the 2nd Boost power inductance L2 both endsIt can obtain：
According to the inductance voltage-second balance principle of switch converters, there is DVL1-on+(1-D)·VL1-off=0, output voltage with
Relation between input voltageIt is as follows so as to the ratio of output voltage threshold input voltage：
That is, band is by the first Boost power inductances L1 and the 2nd Boost power inductance L2 organization center tap inductors
DC-DC voltage boosting translation circuit voltage gain ratioIt is greater than traditional DC-DC
The voltage gain ratio of boost conversion circuitThat is, the DC-DC voltage boosting conversion in the present embodiment
Circuit realizes voltage gain more higher than Traditional DC-DC boosting translation circuit, improves work efficiency.
It should be noted that since centre cap inductance is substantially a non-isolated transformer, inside can exist
Certain leakage inductance, leakage inductance will cause 1 both ends of power switch tube S, and there are higher voltage stress.It is that is, above-mentioned in order to make
DC-DC voltage boosting translation circuit can work normally, and must just use the power device of high voltage-rated.
In the present embodiment, it is preferred that in the circuit structure of above-mentioned DC-DC voltage boosting translation circuit, further included one
A passive lossless snubber, the passive lossless snubber can be used for inhibiting and absorbing becoming in above-mentioned DC-DC voltage boosting
Change the peak voltage and surge current that power switch tube S 1 generates in the circuit course of work.In the present embodiment, in DC-DC
A passive lossless snubber is added in the structure of boost conversion circuit can cause DC-DC voltage boosting translation circuit in work
The voltage stress spike of power device is absorbed during work, that is to say, that the leakage inductance energy inside energy process circuit, and will
The leakage inductance energy of absorption is transmitted to output, in the case where reducing the voltage stress of power device power switch tube S 1, also improves
The work efficiency of converter.
It is passive in the circuit structure of above-mentioned DC-DC voltage boosting translation circuit to be described in detail with multiple embodiments below
The particular circuit configurations and the course of work of lossless absorption circuit.
Embodiment one：
On the basis of above-mentioned DC-DC voltage boosting translation circuit shown in FIG. 1, as shown in Fig. 2, above-mentioned DC-DC
Boost conversion circuit further includes the first absorption diode Ds1 and the second absorption diode Ds2 of series connection, and described first absorbs two
The cathode of pole pipe Ds1 is connected with the anode of the input power Vin, the anode of the second absorption diode Ds2 with it is described defeated
The cathode for entering power supply Vin is connected；
The DC-DC voltage boosting translation circuit further includes the first Absorption Capacitance Cs1, the first Absorption Capacitance Cs1's
One end is connected with the anode of the first absorption diode Ds1, and the other end of the first Absorption Capacitance Cs1 is opened with the power
The drain electrode for closing pipe S1 is connected.
It should be noted that in the present embodiment, the first absorption diode Ds1, the second absorption diode Ds2 and first
Absorption Capacitance Cs1 forms a passive lossless snubber.
Specifically, during power switch tube S 1 turns on, absorbed in the first Absorption Capacitance Cs1, power switch tube S 1, second
A current loop is formed between diode Ds2, both end voltage relatively low the first Absorption Capacitance Cs1 absorbs two by S1, second
Pole pipe Ds2 discharges, and its numerical value is 0.
1 shutdown moment of power switch tube S absorbs two in the first Boost power inductances L1, the first Absorption Capacitance Cs1, first
Current loop is formed between pole pipe Ds1, the center being made of the first Boost power inductances L1 and the 2nd Boost power inductances L2
The leakage inductance energy of tap inductor is charged by the first absorption diode Ds1 to the first Absorption Capacitance Cs1.
After the first Absorption Capacitance Cs1 charges to a certain extent, in the first Absorption Capacitance Cs1, the second absorption diode
Current loop, the first Absorption Capacitance are formed between Ds2, output capacitance C2, rectifier diode D2, the 2nd Boost power inductances L2
Energy in Cs1 is charged by the second absorption diode Ds2 to output capacitance C2, and supplies energy to load R1.
In conclusion electricity is absorbed by the first absorption diode Ds1, the second absorption diode Ds2 and first adding
After holding the passive lossless snubber that Cs1 is formed, it is made of the first Boost power inductances L1 and the 2nd Boost power inductances L2
Centre cap inductance 1 shutdown moment of leakage inductance and power switch tube S peak point current, pass through the first Absorption Capacitance Cs1's
Charge and discharge process is distributed to multiple devices such as the first absorption diode Ds1, the second absorption diode Ds2, the first Absorption Capacitance Cs1
Up, without being limited to 1 individual devices of power switch tube S, therefore, after a passive lossless snubber is added, work(
The voltage stress of rate switching tube S1 can significantly reduce.
By above-mentioned as it can be seen that the first Absorption Capacitance Cs1 can be stored by the first Boost power inductances L1 and the 2nd Boost work(
Leakage inductance energy in the centre cap inductance that rate inductance L2 is formed, is then released to output loading, so as to fulfill leakage inductance energy again
Passive lossless snubber, and reduce the voltage stress of power device power switch tube S 1, improve the efficiency of converter.
Embodiment two：
On the basis of above-mentioned DC-DC voltage boosting translation circuit shown in FIG. 1, as shown in figure 3, above-mentioned DC-DC
Boost conversion circuit further includes the 3rd absorption diode Ds3 and the 4th absorption diode Ds4 of series connection, and the described 3rd absorbs two
The cathode of pole pipe Ds3 is connected with the drain electrode of the power switch tube S 1, anode and the work(of the 4th absorption diode Ds4
The source electrode of rate switching tube S1 is connected；The DC-DC voltage boosting translation circuit further includes the second Absorption Capacitance Cs2, and described second
One end of Absorption Capacitance Cs2 is connected with the anode of the 3rd absorption diode Ds3, and the second Absorption Capacitance Cs2's is another
End is connected with the anode of the rectifier diode D2.
It should be noted that in the present embodiment, the 3rd absorption diode Ds3, the 4th absorption diode Ds4 and second inhale
It receives capacitance Cs2 and forms a passive lossless snubber.
Specifically, 1 shutdown moment of power switch tube S, in the 2nd Boost power inductances L2, the second Absorption Capacitance Cs2,
Current loop is formed between three absorption diode Ds3, by the first Boost power inductances L1 and the 2nd Boost power inductance L2 structures
Into centre cap inductance leakage inductance energy by the 3rd absorption diode Ds3 give the second Absorption Capacitance Cs2 charge.
After the second Absorption Capacitance Cs2 charges to a certain extent, in the second Absorption Capacitance Cs2, rectifier diode D2, output
Form current loop between capacitance C2, the 4th absorption diode Ds4, the energy in the second Absorption Capacitance Cs2 passes through the 4th and absorbs
Diode Ds4 charges to output capacitance C2, and supplies energy to load R1.
In conclusion it is adding by the 3rd absorption diode Ds3, the 4th absorption diode Ds4 and the second Absorption Capacitance
After the passive lossless snubber that Cs2 is formed, it is made of the first Boost power inductances L1 and the 2nd Boost power inductances L2
The peak point current power of 1 shutdown moment of leakage inductance energy and power switch tube S of centre cap inductance, passes through the second Absorption Capacitance
It is more that the charge and discharge process of Cs2 is distributed to the 3rd absorption diode Ds3, the 4th absorption diode Ds4, the second Absorption Capacitance Cs2 etc.
A device up, without being limited to 1 individual devices of power switch tube S, therefore, is adding a passive lossless snubber
Afterwards, the voltage stress of power switch tube S 1 can significantly reduce.
By above-mentioned as it can be seen that the second Absorption Capacitance Cs2 can be stored by the first Boost power inductances L1 and the 2nd Boost work(
Leakage inductance energy in the centre cap inductance that rate inductance L2 is formed, is then released to output loading, so as to fulfill leakage inductance energy again
Passive lossless snubber, and reduce the voltage stress of power device power switch tube S 1, improve the efficiency of converter.
Embodiment three：
On the basis of above-mentioned DC-DC voltage boosting translation circuit shown in FIG. 1, as shown in figure 4, above-mentioned DC-DC
Boost conversion circuit further includes the 5th absorption diode Ds5 and the 6th absorption diode Ds6 of series connection, and the described 5th absorbs two
The anode of pole pipe Ds5 is connected with the anode of the rectifier diode D2, the cathode of the 6th absorption diode Ds6 with it is described whole
The cathode of stream diode D2 is connected；The DC-DC voltage boosting translation circuit further includes the 3rd Absorption Capacitance Cs3, and the described 3rd
One end of Absorption Capacitance Cs3 is connected with the cathode of the 5th absorption diode Ds5, and the 3rd Absorption Capacitance Cs3's is another
End is connected with the anode of the input power Vin.
It should be noted that in the present embodiment, the 5th absorption diode Ds5, the 6th absorption diode Ds6 and the 3rd
Absorption Capacitance Cs3 forms a passive lossless snubber.
Specifically, 1 shutdown moment of power switch tube S, in the first Boost power inductances L1, the 2nd Boost power inductances
Current loop is formed between L2, the 3rd Absorption Capacitance Cs3 and the 5th absorption diode Ds5, by the first Boost power inductances L1
With the leakage inductance energy of the 2nd Boost power inductances L2 centre cap inductance formed the 3rd is given by the 5th absorption diode Ds5
Absorption Capacitance Cs3 charges.
After the 3rd Absorption Capacitance Cs3 charges to a certain extent, in the 3rd Absorption Capacitance Cs3, the 6th absorption diode
Current loop, the 3rd Absorption Capacitance Cs3 are formed between Ds6, output capacitance C2, body diode D1, the first Boost power inductances L1
In energy by the 6th absorption diode Ds6 give output capacitance C2 charge, and supply energy to load R1.
In conclusion electricity is absorbed by the 5th absorption diode Ds5, the 6th absorption diode Ds6 and the 3rd adding
After holding the passive lossless snubber that Cs3 is formed, it is made of the first Boost power inductances L1 and the 2nd Boost power inductances L2
Centre cap inductance 1 shutdown moment of leakage inductance and power switch tube S peak point current, pass through the 3rd Absorption Capacitance Cs3's
It is multiple that charge and discharge process is distributed to the 5th absorption diode Ds5, the 6th absorption diode Ds6 and the 3rd Absorption Capacitance Cs3 etc.
Device up, without being limited to 1 individual devices of power switch tube S, therefore, is adding a passive lossless snubber
Afterwards, the voltage stress of power switch tube S 1 can significantly reduce.
By above-mentioned as it can be seen that the 3rd Absorption Capacitance Cs3 can be stored by the first Boost power inductances L1 and the 2nd Boost work(
Leakage inductance energy in the centre cap inductance that rate inductance L2 is formed, is then released to output loading, so as to fulfill leakage inductance energy again
Passive lossless snubber, and reduce the voltage stress of power device power switch tube S 1, improve the efficiency of converter.
It, will be with following advantageous effect using the embodiment of the present invention：
DC-DC voltage boosting translation circuit in the present invention by the DC-DC voltage boosting in traditional technology by converting electricity
A Boost power inductance in road is substituted for the centre cap inductance being made of two Boost power inductances, improves output
The ratio of gains of voltage and input voltage improves the work efficiency of converter.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, therefore equivalent variations made according to the claims of the present invention, it is still within the scope of the present invention.
Claims (4)
1. a kind of DC-DC voltage boosting translation circuit, including input power (Vin) in parallel, input filter capacitor (C1), power
Switching tube (S1) and its body diode (D1), output filter capacitor (C2), output loading (R1), wherein the power switch pipe
(S1) source electrode is connected with the cathode of the input power (Vin), the anode of the body diode (D1), cathode respectively with it is described
The source electrode of power switch pipe (S1), drain electrode are connected；
The DC-DC voltage boosting translation circuit further includes the first Boost power inductances (L1) and rectifier diode (D2), described
One end of first Boost power inductances (L1) is connected with the anode of the input power (Vin), the first Boost power electricity
The other end of sense (L1) is connected with the drain electrode of the power switch pipe (S1), anode and the work(of the rectifier diode (D2)
The drain electrode coupling of rate switching tube (S1), the cathode of the rectifier diode (D2) are connected with the output loading；
It is characterized in that, the DC-DC voltage boosting translation circuit further includes the 2nd Boost power inductances (L2), the power
The drain electrode of switching tube (S1) is connected by the 2nd Boost power inductances (L2) with the anode of the rectifier diode (D2)；
The DC-DC voltage boosting translation circuit further includes the first absorption diode (Ds1) and the second absorption diode of series connection
(Ds2), and the cathode of first absorption diode (Ds1) is connected with the anode of the input power (Vin), and described second inhales
The anode for receiving diode (Ds2) is connected with the cathode of the input power (Vin), the sun of first absorption diode (Ds1)
Pole is connected with the cathode of second absorption diode (Ds2)；
The DC-DC voltage boosting translation circuit further includes the first Absorption Capacitance (Cs1), first Absorption Capacitance (Cs1)
One end is connected with the anode of first absorption diode (Ds1), the other end and the work(of first Absorption Capacitance (Cs1)
The drain electrode of rate switching tube (S1) is connected.
2. DC-DC voltage boosting translation circuit according to claim 1, which is characterized in that the first Boost power electricity
Feel (L1) and the 2nd Boost power inductances (L2) the organization center tap inductor.
3. a kind of DC-DC voltage boosting translation circuit, including input power (Vin) in parallel, input filter capacitor (C1), power
Switching tube (S1) and its body diode (D1), output filter capacitor (C2), output loading (R1), wherein the power switch pipe
(S1) source electrode is connected with the cathode of the input power (Vin), the anode of the body diode (D1), cathode respectively with it is described
The source electrode of power switch pipe (S1), drain electrode are connected；
The DC-DC voltage boosting translation circuit further includes the first Boost power inductances (L1) and rectifier diode (D2), described
One end of first Boost power inductances (L1) is connected with the anode of the input power (Vin), the first Boost power electricity
The other end of sense (L1) is connected with the drain electrode of the power switch pipe (S1), anode and the work(of the rectifier diode (D2)
The drain electrode coupling of rate switching tube (S1), the cathode of the rectifier diode (D2) are connected with the output loading；
It is characterized in that, the DC-DC voltage boosting translation circuit further includes the 2nd Boost power inductances (L2), the power
The drain electrode of switching tube (S1) is connected by the 2nd Boost power inductances (L2) with the anode of the rectifier diode (D2)；
The DC-DC voltage boosting translation circuit further includes the 3rd absorption diode (Ds3) and the 4th absorption diode of series connection
(Ds4), and the cathode of the 3rd absorption diode (Ds3) is connected with the drain electrode of the power switch pipe (S1), and the described 4th
The anode of absorption diode (Ds4) is connected with the source electrode of the power switch pipe (S1), the anode of the 3rd absorption diode (Ds3)
It is connected with the cathode of the 4th absorption diode (Ds4)；
The DC-DC voltage boosting translation circuit further includes the second Absorption Capacitance (Cs2), second Absorption Capacitance (Cs2)
One end is connected with the anode of the 3rd absorption diode (Ds3), the other end of second Absorption Capacitance (Cs2) with it is described whole
The anode of stream diode (D2) is connected.
4. a kind of DC-DC voltage boosting translation circuit, including input power (Vin) in parallel, input filter capacitor (C1), power
Switching tube (S1) and its body diode (D1), output filter capacitor (C2), output loading (R1), wherein the power switch pipe
(S1) source electrode is connected with the cathode of the input power (Vin), the anode of the body diode (D1), cathode respectively with it is described
The source electrode of power switch pipe (S1), drain electrode are connected；
The DC-DC voltage boosting translation circuit further includes the first Boost power inductances (L1) and rectifier diode (D2), described
One end of first Boost power inductances (L1) is connected with the anode of the input power (Vin), the first Boost power electricity
The other end of sense (L1) is connected with the drain electrode of the power switch pipe (S1), anode and the work(of the rectifier diode (D2)
The drain electrode coupling of rate switching tube (S1), the cathode of the rectifier diode (D2) are connected with the output loading；
It is characterized in that, the DC-DC voltage boosting translation circuit further includes the 2nd Boost power inductances (L2), the power
The drain electrode of switching tube (S1) is connected by the 2nd Boost power inductances (L2) with the anode of the rectifier diode (D2)；
The DC-DC voltage boosting translation circuit further includes the 5th absorption diode (Ds5) and the 6th absorption diode of series connection
(Ds6), and the anode of the 5th absorption diode (Ds5) is connected with the anode of the rectifier diode (D2), and the described 6th
The cathode of absorption diode (Ds6) is connected with the cathode of the rectifier diode (D2), the 5th absorption diode (Ds5)
Cathode is connected with the anode of the 6th absorption diode (Ds6)；
The DC-DC voltage boosting translation circuit further includes the 3rd Absorption Capacitance (Cs3), the 3rd Absorption Capacitance (Cs3)
One end is connected with the cathode of the 5th absorption diode (Ds5), the other end of the 3rd Absorption Capacitance (Cs3) with it is described defeated
The anode for entering power supply (Vin) is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511000295.3A CN105515392B (en) | 2015-12-28 | 2015-12-28 | A kind of DC-DC voltage boosting translation circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511000295.3A CN105515392B (en) | 2015-12-28 | 2015-12-28 | A kind of DC-DC voltage boosting translation circuit |
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| Publication Number | Publication Date |
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| CN105515392A CN105515392A (en) | 2016-04-20 |
| CN105515392B true CN105515392B (en) | 2018-06-01 |
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| CN107911018A (en) * | 2017-11-22 | 2018-04-13 | 广东工业大学 | A kind of high-gain pwm converter |
| CN111937285B (en) * | 2018-03-28 | 2023-11-17 | 株式会社村田制作所 | voltage converter |
| CN109103966A (en) * | 2018-10-18 | 2018-12-28 | 泉州信息工程学院 | A kind of battery pack charged in parallel system |
| CN112421948A (en) * | 2020-12-16 | 2021-02-26 | 苏州市职业大学 | Boost circuit with high Boost ratio |
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| CN102364852A (en) * | 2011-10-24 | 2012-02-29 | 杭州浙阳电气有限公司 | Single switching tube high-grain converter based on coupling inductance voltage-multiplying unit |
| CN103354420A (en) * | 2013-06-18 | 2013-10-16 | 中国航天科工集团第三研究院第八三五七研究所 | Active clamping high gain boost converter using coupling inductor |
| CN103391008A (en) * | 2012-05-08 | 2013-11-13 | 快捷韩国半导体有限公司 | Switch control circuit, coupled inductor boost converter and driving method of the coupled inductor boost converter |
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| ITTO20030550A1 (en) * | 2003-07-15 | 2005-01-16 | Fiat Ricerche | VOLTAGE ELEVATOR CIRCUIT FOR THE POWER SUPPLY OF |
| US20150085534A1 (en) * | 2013-09-20 | 2015-03-26 | Alexander ABRAMOVITZ | Regenerative and ramping acceleration (rara) snubbers for isolated and tapped-inductor converters |
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| CN102364852A (en) * | 2011-10-24 | 2012-02-29 | 杭州浙阳电气有限公司 | Single switching tube high-grain converter based on coupling inductance voltage-multiplying unit |
| CN103391008A (en) * | 2012-05-08 | 2013-11-13 | 快捷韩国半导体有限公司 | Switch control circuit, coupled inductor boost converter and driving method of the coupled inductor boost converter |
| CN103354420A (en) * | 2013-06-18 | 2013-10-16 | 中国航天科工集团第三研究院第八三五七研究所 | Active clamping high gain boost converter using coupling inductor |
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