CN105514134B - 一种显示面板和显示装置 - Google Patents

一种显示面板和显示装置 Download PDF

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CN105514134B
CN105514134B CN201610004824.5A CN201610004824A CN105514134B CN 105514134 B CN105514134 B CN 105514134B CN 201610004824 A CN201610004824 A CN 201610004824A CN 105514134 B CN105514134 B CN 105514134B
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pixel unit
display panel
setting
edge
width
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CN105514134A (zh
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龙跃
王杨
刘庭良
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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    • HELECTRICITY
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/13624Active matrix addressed cells having more than one switching element per pixel
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    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1233Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with different thicknesses of the active layer in different devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1251Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • G02F1/134345Subdivided pixels, e.g. for grey scale or redundancy
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/56Substrates having a particular shape, e.g. non-rectangular

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Abstract

本发明提供一种显示面板和显示装置,属于显示技术领域,其可解决现有的异形面板边缘可见的不平滑的边界线导致的显示面板边缘的视觉效果降低以及影响用户体验的问题。本发明的显示面板中,多行像素单元的边缘呈阶梯状排列,每行像素单元包括中心像素单元和边缘像素单元,每个中心像素单元包括与每个子像素对应的第一薄膜晶体管,第一薄膜晶体管具备第一半导体区;每个边缘像素单元包括与每个子像素对应的第二薄膜晶体管,第二薄膜晶体管具备第二半导体区;分别将第一半导体区的长度和宽度设置为第一设定长度和第一设定宽度,第二半导体区的长度和宽度设置为第二设定长度和第二设定宽度,以使边缘像素单元的亮度小于中心像素单元的亮度。

Description

一种显示面板和显示装置
技术领域
本发明属于显示技术领域,具体涉及一种显示面板和显示装置。
背景技术
随着智能科技的发展,可穿戴设备越来越火爆,而伴随着可穿戴电子产品的发展,这些可穿戴设备的人机交互界面已不再采用传统的矩形面板,而是越来越多使用异形切割的面板,包括圆形、八边形甚至是异形切角等形状,以满足智能设备的可穿戴性能,或者是满足其时尚的外观设计。
但在现有技术中至少存在以下问题:异形显示面板中包括显示区域(即像素区域)、黑矩阵区域和填充区域,当然,为避免漏光,填充区域也需要由黑矩阵材料进行填充。由于常规的像素设计是矩形,要满足这些异形切割的边界,使异形面板的周边形成弧形、斜边等形状,只能将像素按边界的形状排列成锯齿状,形成锯齿状边缘,这些成锯齿状排列在异形边缘的像素只能做到近似弧形或者斜边,会导致具有显示亮度的显示区域在边缘处的锯齿状的边缘与完全呈现黑暗的填充区域之间形成强烈的颜色对比,使显示区域锯齿状的边缘可通过人眼被识别到,降低了显示面板边缘的视觉效果,严重影响用户体验。
发明内容
本发明针对现有的异形面板边缘可见的不平滑的边界线导致的显示面板边缘的视觉效果降低以及影响用户体验的问题,提供一种能够改善显示面板边缘的视觉效果、提高用户体验度的显示面板和显示装置。
解决本发明技术问题所采用的技术方案是一种显示面板,包括多行像素单元,多行像素单元的边缘呈阶梯状排列,每行像素单元包括中心像素单元和边缘像素单元,每个中心像素单元包括多个子像素和与每个子像素对应的第一薄膜晶体管,所述第一薄膜晶体管具备第一半导体区;
每个边缘像素单元包括多个子像素和与每个子像素对应的第二薄膜晶体管,第二薄膜晶体管具备第二半导体区;所述第一半导体区的长度设置为第一设定长度,所述第一半导体区的宽度设置为第一设定宽度,所述第二半导体区的长度设置为第二设定长度,所述第二半导体区的宽度设置为第二设定宽度,以使边缘像素单元的亮度小于中心像素单元的亮度。
其中,所述第一半导体区在通电时形成第一沟道区,所述第二半导体区在通电时形成第二沟道区。
其中,所述第二设定长度大于所述第一设定长度。
其中,所述第二设定宽度小于所述第一设定宽度。
其中,每行像素单元还包括:次边缘像素单元,所述次边缘像素单元位于所述中心像素单元和所述边缘像素单元之间,每个次边缘像素单元包括多个子像素和与每个子像素对应的第三薄膜晶体管,第三薄膜晶体管具备第三半导体区;所述第三半导体区的长度为第三设定长度,所述第三半导体区的宽度为第三设定宽度,以使所述次边缘像素单元的亮度小于中心像素单元的亮度,所述次边缘像素单元的亮度大于所述边缘像素单元的亮度。
其中,所述第三半导体区在通电时形成第三沟道区。
其中,所述第二设定长度大于所述第三设定长度,所述第三设定长度大于所述第一设定长度。
其中,所述第二设定宽度小于所述第三设定宽度,所述第三设定宽度小于所述第一设定宽度。
其中,所述显示面板为平面转换型显示面板、高级超维场转换型显示面板或扭曲向列型显示面板中的一种,其中,所述扭曲向列型显示面板的显示模式为常黑模式。
作为另一技术方案,本申请还提供一种显示装置,包括显示面板,所述显示面板为上述任意一项所述的显示面板。
本发明的显示面板和显示装置中,该显示面板通过设置中心像素单元的第一薄膜晶体管的第一半导体区的第一设定长度和第一设定宽度,以及设置边缘像素单元的第二薄膜晶体管的第二半导体区的第二设定长度和第二设定宽度,能够使边缘像素单元的亮度小于中心像素单元的亮度,从而弱化中心像素单元与填充区域之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。
附图说明
图1为本发明的实施例1、2的显示面板的结构示意图;
图2为本发明的实施例1的显示面板的第二设定长度与第一设定长度的示意图;
图3为本发明的实施例2的显示面板的第二设定宽度与第一设定宽度的示意图;
图4为本发明的实施例3、4的显示面板的结构示意图;
图5为本发明的实施例3的显示面板的第二设定长度、第一设定长度和第三设定长度的示意图;
图6为本发明的实施例4的显示面板的第二设定宽度、第一设定宽度和第三设定宽度的示意图;
其中,附图标记为:1、中心像素单元;11、第一半导体区;12、中心像素电极;2、边缘像素单元;21、第二半导体区;22、边缘像素电极;3、黑矩阵区域;4、填充区域;5、次边缘像素单元;51、第三半导体区;52、次边缘像素电极;6、像素电极信号线。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1:
请参照图1和图2,本实施例提供一种显示面板,包括多行像素单元,多行像素单元的边缘呈阶梯状排列,每行像素单元包括中心像素单元1和边缘像素单元2,每个中心像素单元1包括多个子像素和与每个子像素对应的第一薄膜晶体管,第一薄膜晶体管具备第一半导体区11;每个边缘像素单元2包括多个子像素和与每个子像素对应的第二薄膜晶体管,第二薄膜晶体管具备第二半导体区21;第一半导体区11的长度设置为第一设定长度,第一半导体区11的宽度设置为第一设定宽度,第二半导体区21的长度设置为第二设定长度,第二半导体区21的宽度设置为第二设定宽度,以使边缘像素单元2的亮度小于中心像素单元1的亮度。
在本实施例中,将像素单元分为中心像素单元1和边缘像素单元2,其中,中心像素单元1是指完全不与填充区域4相接处的像素单元,边缘像素单元2是指至少有两个边与填充区域4相接处的像素单元,也可以理解为边缘像素单元2是指所有像素单元中位于最外侧的、用于形成“阶梯”的像素单元。在实际操作中,为避免漏光,填充区域4也需要由黑矩阵材料进行填充,因此,填充区域4和黑矩阵区域3可以一体形成,在本实施例中,为了区分填充区域4和黑矩阵区域3,将填充区域4和黑矩阵区域3之间用虚线隔开,如图1所示。其中,第一半导体区11在通电时形成第一沟道区,第二半导体区21在通电时形成第二沟道区。
其中,每个中心像素单元1均包括多个子像素(通常包括R子像素、G子像素和B子像素)和与每个子像素对应的第一薄膜晶体管(图中未示出),第一薄膜晶体管具备第一半导体区11,第一半导体区11的长度设置为第一设定长度,第一半导体区11的宽度设置为第一设定宽度;每个边缘像素单元2包括多个子像素和与每个子像素对应的第二薄膜晶体管(图中未示出),第二薄膜晶体管具备第二半导体区21,第二半导体区21的长度设置为第二设定长度,第二半导体区21的宽度设置为第二设定宽度。
需要注意的是,本实施例中的沟道区的长度是指载流子通过的宽度,如图2所示,左侧可视为用来提供电压的像素电极信号线6,实际上,像素电极信号线6是一个整体结构,在附图2中只是为了区分不同像素单元对应的像素电极信号线6的不同部分,因此对像素电极信号线6的不同部分进行了颜色区分,右侧为像素电极,像素电极信号线6与像素电极之间的区域即为沟道区,当施加电压时,载流子从像素电极信号线6端向像素电极端移动或从像素电极端向像素电极信号线6端移动(所施加的电压极性和载流子的极性影响载流子在像素电极信号线6端与像素电极端之间的移动方向),载流子在像素电极信号线6端与像素电极端之间移动的距离即为沟道区的长度。
其中,第二设定长度大于第一设定长度。
之所以如此设置,是由于边缘像素单元2的第二设定长度大于中心像素单元1的第一设定长度,在施加电压时,边缘像素单元2因第二设定长度较大,载流子在第二半导体区21内的移动距离较长,即载流子完全从第一半导体区11的像素电极信号线6移动到中心像素电极12时,在第二半导体区21内载流子还未完全从第二半导体区21的像素电极信号线6移动到边缘像素电极22,也就是说,当中心像素单元1完成充电时,边缘像素单元2还未完成充电,此时停止施加电压,会导致边缘像素单元2的充电效率低于中心像素单元1的充电效率,因此,在进行显示时,边缘像素单元2的显示亮度比中心像素单元1的显示亮度低,从而弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。
优选地,该显示面板可为平面转换型(IPS型)显示面板、高级超维场转换型(ADS型)显示面板或扭曲向列型(TN型)显示面板中的一种,其中,TN型显示面板的显示模式为常黑模式。
之所以如此设置,是由于对于常黑模式的显示系统而言,像素单元充电不足意味着液晶分子偏转不足,会导致光线透过率下降,边缘像素单元2就会比中心像素单元1的亮度暗。
本实施例的显示面板,通过将中心像素单元1的第一薄膜晶体管的第一半导体区11设置为第一设定长度,以及将边缘像素单元2的第二薄膜晶体管的第二半导体区21设置为第二设定长度,且第二设定长度大于第一设定长度,以使边缘像素单元2的充电效率低于中心像素单元1的充电效率,边缘像素单元2的显示亮度比中心像素单元1的显示亮度低,从而弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。
实施例2:
请参照图1和图3,本实施例提供一种显示面板,其具有与实施例1的显示面板类似的结构,其与实施例1的区别在于,第二设定宽度小于第一设定宽度。
需要注意的是,本实施例中的沟道区的宽度是指载流子通过的长度,如图2所示,每个像素单元的左侧可视为用来提供电压的像素电极信号线6,实际上,像素电极信号线6是一个整体结构,在附图2中只是为了区分不同像素单元对应的像素电极信号线6的不同部分,因此对像素电极信号线6的不同部分进行了颜色区分,右侧为像素电极,像素电极信号线6与像素电极之间的区域即为沟道区,当施加电压时,载流子从像素电极信号线6端向像素电极端移动或从像素电极端向像素电极信号线6端移动(所施加的电压极性和载流子的极性影响载流子在像素电极信号线6端与像素电极端之间的移动方向),与载流子移动方向垂直的方向(图中由上到下)上沟道区的长度即为沟道区的宽度。
其中,第二设定宽度小于第一设定宽度。之所以如此设置,是由于边缘像素单元2的第二设定宽度小于中心像素单元1的第一设定宽度,在施加电压时,边缘像素单元2因第二设定宽度较小,使得流经第二半导体区21的载流子的总量减少,故当中心像素单元1完成充电时,边缘像素单元2还未完成充电,此时停止施加电压,会导致边缘像素单元2的充电效率低于中心像素单元1的充电效率,因此,在进行显示时,边缘像素单元2的显示亮度比中心像素单元1的显示亮度低,从而弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。
本实施例提供的显示面板,通过将中心像素单元1的第一薄膜晶体管的第一半导体区11设置为第一设定宽度,以及将边缘像素单元2的第二薄膜晶体管的第二半导体区21设置为第二设定宽度,且第二设定宽度小于第一设定宽度,以使边缘像素单元2的充电效率低于中心像素单元1的充电效率,边缘像素单元2的显示亮度比中心像素单元1的显示亮度低,从而弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。
实施例3:
请参照图4和图5,本实施例提供一种显示面板,其具有与实施例1的显示面板类似的结构,其与实施例1的区别在于,每行像素单元还包括:次边缘像素单元5。
在本实施例中,次边缘像素单元5位于中心像素单元1和边缘像素单元2之间。具体地,次边缘像素单元5是指有一个边与填充区域4相接处的像素单元。
每个次边缘像素单元5包括多个子像素(通常包括R子像素、G子像素和B子像素)和与每个子像素对应的第三薄膜晶体管(图中未示出),第三薄膜晶体管具备第三半导体区51,第三半导体区51的长度为第三设定长度,第三半导体区51的宽度为第三设定宽度。
需要注意的是,本实施例中的沟道区的宽度是指载流子通过的长度,如图6所示,每个像素单元的左侧可视为用来提供电压的像素电极信号线6,实际上,像素电极信号线6是一个整体结构,在附图2中只是为了区分不同像素单元对应的像素电极信号线6的不同部分,因此对像素电极信号线6的不同部分进行了颜色区分,右侧为像素电极,像素电极信号线6与像素电极之间的区域即为沟道区,当施加电压时,载流子从像素电极信号线6端向像素电极端移动或从像素电极端向像素电极信号线6端移动(所施加的电压极性和载流子的极性影响载流子在像素电极信号线6端与像素电极端之间的移动方向),与载流子移动方向垂直的方向(图中由上到下)上沟道区的长度即为沟道区的宽度。其中,第三半导体区在通电时形成第三沟道区。
其中,第二设定长度大于第三设定长度,第三设定长度大于第一设定长度。在本实施例中,对于沟道区长度的定义请参照实施例1。
之所以如此设置,是由于边缘像素单元2的第二设定长度、中心像素单元1的第一设定长度以及次边缘像素单元5的第三设定长度这三者之间的关系满足:第二设定长度>第三设定长度>第一设定长度,在施加电压时,边缘像素单元2因第二设定长度较大,次边缘像素单元5的第三设定长度次之,中心像素单元1的第一设定长度最小,载流子在第二半导体区21内的移动距离最长,载流子在第三半导体区51内的移动距离次之,载流子在第一半导体区11内的移动距离最短,即载流子完全从第一半导体区11的像素电极信号线6移动到中心像素电极12时,在第二半导体区21和第三半导体区51内载流子还未完全从对应的沟道区的像素电极信号线6移动到边缘像素电极22和次边缘像素电极52,也就是说,当中心像素单元1完成充电时,边缘像素单元2和次边缘像素单元5均未完成充电,但次边缘像素单元5的充电量大于边缘像素单元2的充电量,此时停止施加电压,会导致边缘像素单元2的充电效率低于次边缘像素单元5的充电效率,而次边缘像素单元5的充电效率又低于中心像素单元1的充电效率。因此,在进行显示时,边缘像素单元2的显示亮度比次边缘像素单元5的显示亮度低,而次边缘像素单元5的显示亮度比中心像素单元1的显示亮度低,从而逐渐弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。值得注意的是,由于在中心像素单元1和边缘像素单元2之间还设置了次边缘像素单元5,可使中心像素单元1与填充区域4之间的亮度对比度的弱化更加柔和。
本实施例提供的显示面板,通过设定第二设定长度大于第三设定长度,第三设定长度大于第一设定长度,以使边缘像素单元2的充电效率低于次边缘像素单元5的充电效率,而次边缘像素单元5的充电效率又低于中心像素单元1的充电效率,因此,在进行显示时,边缘像素单元2的显示亮度比次边缘像素单元5的显示亮度低,而次边缘像素单元5的显示亮度比中心像素单元1的显示亮度低,从而逐渐弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度;同时,由于在中心像素单元1和边缘像素单元2之间还设置了次边缘像素单元5,可使中心像素单元1与填充区域4之间的亮度对比度的弱化更加柔和,亮度过渡更加平滑。
实施例4:
请参照图4和图6,本实施例提供一种显示面板,其具有与实施例3的显示面板类似的结构,其与实施例3的区别在于,第二设定宽度小于第三设定宽度,第三设定宽度小于第一设定宽度。
其中,第二设定宽度小于第三设定宽度,第三设定宽度小于第一设定宽度。之所以如此设置,是由于边缘像素单元2的第二设定宽度、中心像素单元1的第一设定宽度以及次边缘像素单元5的第三设定宽度这三者之间的关系满足:第二设定宽度<第三设定宽度<第一设定宽度,在施加电压时,边缘像素单元2因第二设定宽度较小,次边缘像素单元5的第三设定宽度稍大,中心像素单元1的第一设定宽度最大,使得流经第二半导体区21的载流子的总量最少,流经第三半导体区51的载流子的总量稍大于流经第二半导体区21的载流子的总量,流经第一半导体区11的载流子的总量最多,故当中心像素单元1完成充电时,边缘像素单元2和次边缘像素单元5均未完成充电,但次边缘像素单元5的充电量大于边缘像素单元2的充电量,此时停止施加电压,会导致边缘像素单元2的充电效率低于次边缘像素单元5的充电效率,而次边缘像素单元5的充电效率又低于中心像素单元1的充电效率。因此,在进行显示时,边缘像素单元2的显示亮度比次边缘像素单元5的显示亮度低,而次边缘像素单元5的显示亮度比中心像素单元1的显示亮度低,从而逐渐弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。值得注意的是,由于在中心像素单元1和边缘像素单元2之间还设置了次边缘像素单元5,可使中心像素单元1与填充区域4之间的亮度对比度的弱化更加柔和。
本实施例提供的显示面板,通过设定第二设定宽度小于第三设定宽度,第三设定宽度小于第一设定宽度,以使边缘像素单元2的充电效率低于次边缘像素单元5的充电效率,而次边缘像素单元5的充电效率又低于中心像素单元1的充电效率,因此,在进行显示时,边缘像素单元2的显示亮度比次边缘像素单元5的显示亮度低,而次边缘像素单元5的显示亮度比中心像素单元1的显示亮度低,从而逐渐弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度;同时,由于在中心像素单元1和边缘像素单元2之间还设置了次边缘像素单元5,可使中心像素单元1与填充区域4之间的亮度对比度的弱化更加柔和,亮度过渡更加平滑。
实施例5:
本实施例提供了一种显示装置,其包括实施例1至4中所述的显示面板。所述显示装置可以为:液晶显示面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本实施例提供的显示装置,包括实施例1至4中所述的显示面板,能够使边缘像素单元2的亮度小于中心像素单元1的亮度,从而弱化中心像素单元1与填充区域4之间的亮度对比度,即起到亮度缓冲的作用,弱化人眼对于“锯齿”边缘的识别度,减小边缘像素单元2的“锯齿”视觉效应,进而改善异形面板边缘视觉效果,提高用户体验度。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种显示面板,其特征在于,包括多行像素单元,多行像素单元的边缘呈阶梯状排列,每行像素单元包括中心像素单元和边缘像素单元,每个中心像素单元包括多个子像素和与每个子像素对应的第一薄膜晶体管,所述第一薄膜晶体管具备第一半导体区;
每个边缘像素单元包括多个子像素和与每个子像素对应的第二薄膜晶体管,第二薄膜晶体管具备第二半导体区;所述第一半导体区的长度设置为第一设定长度,所述第一半导体区的宽度设置为第一设定宽度,所述第二半导体区的长度设置为第二设定长度,所述第二半导体区的宽度设置为第二设定宽度,以使边缘像素单元的亮度小于中心像素单元的亮度。
2.根据权利要求1所述的显示面板,其特征在于,所述第一半导体区在通电时形成第一沟道区,所述第二半导体区在通电时形成第二沟道区。
3.根据权利要求1所述的显示面板,其特征在于,所述第二设定长度大于所述第一设定长度。
4.根据权利要求1所述的显示面板,其特征在于,所述第二设定宽度小于所述第一设定宽度。
5.根据权利要求1所述的显示面板,其特征在于,每行像素单元还包括:次边缘像素单元,所述次边缘像素单元位于所述中心像素单元和所述边缘像素单元之间,每个次边缘像素单元包括多个子像素和与每个子像素对应的第三薄膜晶体管,第三薄膜晶体管具备第三半导体区;所述第三半导体区的长度为第三设定长度,所述第三半导体区的宽度为第三设定宽度,以使所述次边缘像素单元的亮度小于中心像素单元的亮度,所述次边缘像素单元的亮度大于所述边缘像素单元的亮度。
6.根据权利要求5所述的显示面板,其特征在于,所述第三半导体区在通电时形成第三沟道区。
7.根据权利要求5所述的显示面板,其特征在于,所述第二设定长度大于所述第三设定长度,所述第三设定长度大于所述第一设定长度。
8.根据权利要求5所述的显示面板,其特征在于,所述第二设定宽度小于所述第三设定宽度,所述第三设定宽度小于所述第一设定宽度。
9.根据权利要求1-8任意一项所述的显示面板,其特征在于,所述显示面板为平面转换型显示面板、高级超维场转换型显示面板或扭曲向列型显示面板中的一种,其中,所述扭曲向列型显示面板的显示模式为常黑模式。
10.一种显示装置,包括显示面板,其特征在于,所述显示面板为权利要求1至9任意一项所述的显示面板。
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