CN105506733A - Epitaxial growth equipment - Google Patents
Epitaxial growth equipment Download PDFInfo
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- CN105506733A CN105506733A CN201510988437.5A CN201510988437A CN105506733A CN 105506733 A CN105506733 A CN 105506733A CN 201510988437 A CN201510988437 A CN 201510988437A CN 105506733 A CN105506733 A CN 105506733A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
Abstract
The invention provides epitaxial growth equipment. The epitaxial growth equipment comprises a reaction chamber, a control device and a measurement device, wherein the control device is connected with the measurement device and the reaction chamber; a to-be-grown epitaxial wafer is arranged on a growth carrier in the reaction chamber; the measurement device is arranged above a window of the reaction chamber and used for measuring the temperature and the wavelength of a current quantum well layer of the to-be-grown epitaxial wafer in real time and sending the temperature and the wavelength of the current quantum well layer to the control device; the control device is used for controlling the reaction chamber to grow the to-be-grown epitaxial wafer and adjusting the temperature of the reaction chamber when a next quantum well layer of the to-be-grown epitaxial wafer is grown according to the temperature and the wavelength of the current quantum well layer and preset reaction parameters including the target wavelength of the to-be-grown epitaxial wafer and a corresponding relationship of the wavelength and the temperature. The epitaxial growth equipment can increase the yield of the epitaxial wafers.
Description
Technical field
The present invention relates to photodiode manufacturing technology, particularly relate to a kind of epitaxial growth equipment.
Background technology
Take gan as the wide-band gap material of representative, it is the third generation semiconductor material after silicon and gallium arsenide, these wide-band gap materials can grow on substrate, to form epitaxial wafer, for making the electron devices such as photodiode, laser apparatus, detector, high-frequency high-power transistor, wherein, the equipment growing the epitaxial wafer of this type of electron device is called as epitaxial growth equipment.
Existing epitaxial growth equipment comprises reaction chamber, wherein, is provided with growing carrier in reaction chamber, growing carrier is placed with substrate, and wide-band gap material is grown on substrate by vapor phase epitaxy technique in the reaction chamber, forms epitaxial wafer.At present, the technology comparative maturity of existing epitaxial growth equipment, be widely used in the epitaxial wafer producing the electron devices such as photodiode, laser apparatus, detector, high-frequency high-power transistor, the reaction chamber of this epitaxial growth equipment at every turn can the epitaxial wafer of output 31 4 inches or the epitaxial wafer of 124 2 inches, makes the production capacity of existing vapor phase epitaxial growth equipment higher.
But, in prior art, produce in the process of epitaxial wafer using above-mentioned existing epitaxial growth equipment, process engineer can only set the temperature of reaction chamber by artificial experience, to control the wavelength of the epitaxial wafer that whole reaction chamber is produced, the precision of the wavelength of the epitaxial wafer that reaction chamber is produced is poor, even occur that wavelength departure is more, the situation causing produced epitaxial wafer to be scrapped, reduces the yield rate of epitaxial wafer, and causes the waste of human cost.
Summary of the invention
The invention provides a kind of epitaxial growth equipment, in order to solve the temperature by the reaction chamber of artificial experience setting epitaxial growth equipment in prior art, the yield rate of the epitaxial wafer causing epitaxial growth equipment to be produced is lower, the problem of cost of human resources waste.
For achieving the above object, embodiments of the invention adopt following technical scheme:
First aspect present invention provides a kind of epitaxial growth equipment, comprising: reaction chamber, control device, measuring apparatus; Wherein, described control device is connected with described measuring apparatus and described reaction chamber respectively; Treat that growth epitaxial wafer is arranged in the growing carrier of described reaction chamber inside; Described measuring apparatus is arranged on the top of the window of described reaction chamber;
Described measuring apparatus, for waiting temperature and the wavelength of the current quantum well layer growing epitaxial wafer described in measuring in real time, and sends to described control device by the temperature of described current quantum well layer and wavelength;
Described control device, wait to grow epitaxial wafer described in the growth of described reaction chamber for controlling, and according to the temperature of described current quantum well layer and wavelength, and default reaction parameter, adjust described reaction chamber in the temperature described in growing in time growing next quantum well layer of epitaxial wafer; Described default reaction parameter comprises the corresponding relation of target wavelength, wavelength and the temperature waiting to grow epitaxial wafer.
As mentioned above, described control device, also for when the wavelength of described current quantum well layer and the difference of the described target wavelength wait growing epitaxial wafer are greater than predetermined threshold value, output alarm information.
As mentioned above, described measuring apparatus comprises temperature measuring equipment and wavelength measuring apparatus;
Described temperature measuring equipment and described wavelength measuring apparatus are respectively just to the top of window being arranged on described reaction chamber.
As mentioned above, described temperature measuring equipment comprises: the first laser apparatus, the first spectral filter, hygrosensor;
Described first laser apparatus, for described current quantum well layer Emission Lasers, reflexes to described hygrosensor on by described laser by described first spectral filter to make described current quantum well layer;
Described hygrosensor, for receiving described laser, and after the temperature measuring described laser, exports described temperature to described control device.
As mentioned above, described temperature measuring equipment also comprises: speculum;
Described speculum is arranged on directly over the window of described reaction chamber, for the described laser reflection extremely described current quantum well layer launched by described first laser apparatus.
As mentioned above, described first laser apparatus is infrared laser.
As mentioned above, described wavelength measuring apparatus comprises: second laser, the second spectral filter, optical spectrum instrumentation;
Described second laser, for described current quantum well layer Emission Lasers, to excite the outside emission of light of described current quantum well layer;
Described optical spectrum instrumentation, for being received the light that described current quantum well layer is launched by the second spectral filter, and after the wavelength measuring described light, exports described wavelength to described control device.
As mentioned above, described wavelength measuring apparatus also comprises: speculum;
Described speculum is arranged on directly over the window of described reaction chamber, for the laser reflection extremely described current quantum well layer launched by described second laser.
As mentioned above, described control device, for according to the temperature of described current quantum well layer and wavelength, and default reaction parameter, adjust described reaction chamber in the temperature described in growing in time growing next quantum well layer of epitaxial wafer, specifically comprise:
Described control device, specifically for judging the wavelength of described current quantum well layer is waited to grow the target wavelength of epitaxial wafer described in whether equaling; If not, then determine the wavelength of described current quantum well layer and the described wavelength difference waiting the target wavelength growing epitaxial wafer, and according to the corresponding relation of described wavelength and temperature, determine temperature adjusting range, and the temperature according to the temperature of described current quantum well layer and the adjustment of described temperature adjusting range in time growing next quantum well layer of epitaxial wafer.
As mentioned above, described reaction chamber comprises multiple growing carrier, each growing carrier is provided with and waits to grow epitaxial wafer;
The corresponding measuring apparatus of each growing carrier.
Epitaxial growth equipment provided by the invention, by arranging measuring apparatus above the window of reaction chamber, the temperature waiting the current quantum well layer growing epitaxial wafer of measurement reaction chamber inside that can be real-time and wavelength, and then can according to this temperature and wavelength, automatic adjustment reaction chamber grows temperature during next quantum well layer, make to treat that growth epitaxial wafer is after growing into epitaxial wafer, the wavelength of each quantum well layer of this epitaxial wafer all can level off to or equal default target wavelength, ensure that the precision of the wavelength of epitaxial wafer, improve the yield rate of the epitaxial wafer that epitaxial growth equipment is produced.Meanwhile, because above-mentioned epitaxial growth equipment can adjust the temperature of reaction chamber automatically, need not be set by artificial experience, because this reducing human cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of epitaxial growth equipment embodiment one provided by the invention;
Fig. 2 is the structural representation of epitaxial growth equipment embodiment two provided by the invention.
Description of reference numerals:
11: reaction chamber; 12: control device;
13: measuring apparatus; 111: wait to grow epitaxial wafer;
112: growing carrier; 113: window;
131: temperature measuring equipment; 132: wavelength measuring apparatus;
1311: the first laser apparatus; 1312: the first spectral filters;
1313: hygrosensor; 1321: second laser;
1322: the second spectral filters; 1323: optical spectrum instrumentation.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
At present, produce in the process of epitaxial wafer using existing epitaxial growth equipment, process engineer can only set the temperature of reaction chamber by artificial experience, to control the wavelength of the epitaxial wafer that whole reaction chamber is produced, the precision of the wavelength of the epitaxial wafer that reaction chamber is produced is poor, even occurs that wavelength departure is more, causes the situation that produced epitaxial wafer is scrapped, reduce the yield rate of epitaxial wafer, and cause the waste of human cost.
Epitaxial growth equipment provided by the invention, may be used for the epitaxial wafer producing any wavelength and size, to solve in prior art when the temperature of the reaction chamber by artificial experience setting epitaxial growth equipment, the yield rate of the epitaxial wafer causing epitaxial growth equipment to be produced is lower, the problem of cost of human resources waste.
With embodiment particularly, technical scheme of the present invention is described in detail below.These specific embodiments can be combined with each other below, may repeat no more for same or analogous concept or process in some embodiment.
Fig. 1 is the structural representation of epitaxial growth equipment embodiment one provided by the invention, and as shown in Figure 1, this epitaxial growth equipment can comprise: reaction chamber 11, control device 12, measuring apparatus 13; Wherein, control device 12 is connected with measuring apparatus 13 and reaction chamber 11 respectively; Treat that growth epitaxial wafer 111 is arranged in the growing carrier 112 of reaction chamber 11 inside; Measuring apparatus 13 is arranged on the top of the window 113 of reaction chamber 11;
Measuring apparatus 13, for measuring the temperature and wavelength of waiting the current quantum well layer growing epitaxial wafer 111 in real time, and sends to control device 12 by the temperature of current quantum well layer and wavelength;
Control device 12, grows wait to grow epitaxial wafer 111 for controlling reaction chamber 11, and according to the temperature of current quantum well layer and wavelength, and default reaction parameter, adjustment reaction chamber 11 is growing the temperature in time growing next quantum well layer of epitaxial wafer 111; Default reaction parameter comprises the corresponding relation of target wavelength, wavelength and the temperature waiting to grow epitaxial wafer 111.
Concrete, above-mentioned epitaxial growth equipment can comprise reaction chamber 11, for under the control of control device 12, grow and wait to grow epitaxial wafer 111, wherein, the inside of this reaction chamber 11 is provided with the growing carrier 112 carrying and wait to grow epitaxial wafer 111, and the top of this reaction chamber 11 is provided with the window 113 with ft connection, can measure the temperature waiting the current quantum well layer growing epitaxial wafer 111 and wavelength that are positioned at reaction chamber 11 inside to make measuring apparatus 13 by this window 113.It should be noted that, the embodiment of the present invention does not limit the growth technology that above-mentioned reaction chamber 11 uses.
Above-mentioned for measuring the temperature of current quantum well layer and the measuring apparatus 13 of wavelength waiting to grow epitaxial wafer 111, it can be arbitrary measuring apparatus with measuring tempeature and function of wavelength, such as: the measuring apparatus comprising temperature-measuring module and wavelength measurement module, the measuring apparatus etc. of temperature measuring equipment and wavelength measuring apparatus is comprised.In the present embodiment, above-mentioned measuring apparatus 13 can grow in time growing each quantum well layer of epitaxial wafer 111, the temperature of automatic and real-time this quantum well layer of measurement and wavelength, and by this temperature and wavelength real-time send to control device 12.
The above-mentioned control device 12 for receiving temperature measured by measuring apparatus 13 and wavelength, transmission can be had for arbitrary, receive, control, the device of processing capacity, such as: central processing unit, micro-chip etc., in the present embodiment, above-mentioned control device 12 not only for control reaction chamber 11 according to set reaction parameter grow wait grow epitaxial wafer 111, also for according to the temperature of current quantum well layer and wavelength, and the target wavelength waiting to grow epitaxial wafer 111 preset, the corresponding relation of wavelength and temperature, automatic adjustment reaction chamber 11 is growing the temperature in time growing next quantum well layer of epitaxial wafer 111, next quantum well layer growing epitaxial wafer 111 can be waited according to the temperature growth after adjustment to make reaction chamber 11.During specific implementation, above-mentioned control device 12 can according to the difference between the wavelength of current quantum well layer and target wavelength and the wavelength preset and the corresponding relation of temperature, tentatively determine the temperature amplitude needing adjustment, and then the temperature amplitude that can adjust according to the temperature of current quantum well layer and the needs determined, automatic adjustment reaction chamber 11 is growing the temperature in time growing next quantum well layer of epitaxial wafer 111, optionally, this adjustment can be coarse adjustment, can also be accurate adjustment.
The temperature that the wavelength of the quantum well layer growing epitaxial wafer 111 depends primarily on reaction chamber is waited due to above-mentioned, therefore, by the way, make epitaxial growth equipment can according to the temperature of the current quantum well layer measured in real time and wavelength, adjustment reaction chamber 11 grows the temperature waiting next quantum well layer growing epitaxial wafer 111, and then make to wait that the wavelength of next quantum well layer growing epitaxial wafer 111 can level off to or equal default target wavelength, until this treats that growth epitaxial wafer 111 grows into epitaxial wafer in reaction chamber 11.Wherein, above-mentioned wavelength and the corresponding relation of temperature are specifically as follows the change of the length of wavelength corresponding to every centigradetemperature, such as: 2nm/ DEG C, when specifically implementing, what the corresponding relation of this wavelength and temperature can be produced according to epitaxial growth equipment waits that growing epitaxial wafer determines.
It should be noted that, when being provided with multiple growing carrier 112 in above-mentioned reaction chamber 11, and each growing carrier 112 all carries in time growing epitaxial wafer 111, the precision of the wavelength of epitaxial wafer 111 after growing into epitaxial wafer is grown in order to ensure treating in each growing carrier 112, optionally, above-mentioned epitaxial growth equipment can comprise multiple measuring apparatus 13, the corresponding growing carrier 112 of each measuring apparatus 13, namely each measuring apparatus 13 in the growing carrier measuring its correspondence 112 wait the temperature of current quantum well layer and the wavelength that grow epitaxial wafer 111, thus make control device 12 can temperature measured by the measuring apparatus 13 corresponding to each growing carrier 112 and wavelength, automatic adjustment reaction chamber 11 is growing the temperature in time growing next quantum well layer of epitaxial wafer 111 in this growing carrier 112, and then make each growing carrier 112 in reaction chamber 11 waits that the wavelength of next quantum well layer growing epitaxial wafer 111 can level off to or equal default target wavelength, until this treats that growth epitaxial wafer 111 grows into epitaxial wafer in this growing carrier 112.
The epitaxial growth equipment of prior art is in the process of producing epitaxial wafer, can not be real-time know is positioned at the temperature waiting the current quantum well layer growing epitaxial wafer of reaction chamber inside, therefore, existing epitaxial growth equipment is when producing epitaxial wafer, the temperature that sets according to artificial experience of operation slip-stick artist can only produce epitaxial wafer, the precision of the wavelength of the epitaxial wafer that reaction chamber is produced is poor, even occur that wavelength departure is more, cause the situation that produced epitaxial wafer is scrapped, reduce the yield rate of epitaxial wafer, and cause the waste of human cost.And epitaxial growth equipment provided by the invention, can in the process of producing epitaxial wafer, automatic measurement and adjustment reaction chamber grow the temperature in time growing the quantum well layer of epitaxial wafer, to make to wait that the wavelength of each quantum well layer growing epitaxial wafer can level off to or equal default target wavelength, and then make this treat growth after epitaxial wafer grows into epitaxial wafer, the wavelength of this epitaxial wafer levels off to or equals default target wavelength, ensure that the precision of the wavelength of this epitaxial wafer, improve the yield rate of the epitaxial wafer that epitaxial growth equipment is produced.Meanwhile, because above-mentioned epitaxial growth equipment can adjust the temperature of reaction chamber automatically, need not be set by artificial experience, because this reducing human cost.
Epitaxial growth equipment provided by the invention, by arranging measuring apparatus above the window of reaction chamber, the temperature waiting the current quantum well layer growing epitaxial wafer of measurement reaction chamber inside that can be real-time and wavelength, and then can according to this temperature and wavelength, automatic adjustment reaction chamber grows temperature during next quantum well layer, make to treat that growth epitaxial wafer is after growing into epitaxial wafer, the wavelength of each quantum well layer of this epitaxial wafer all can level off to or equal default target wavelength, ensure that the precision of the wavelength of epitaxial wafer, improve the yield rate of the epitaxial wafer that epitaxial growth equipment is produced.Meanwhile, because above-mentioned epitaxial growth equipment can adjust the temperature of reaction chamber automatically, need not be set by artificial experience, because this reducing human cost.
Further, on the basis of above-described embodiment, what the present embodiment related to is above-mentioned control device 12 is how according to temperature and the wavelength of current quantum well layer, and default reaction parameter, adjustment reaction chamber 11 is in the specific implementation growing the temperature in time growing next quantum well layer of epitaxial wafer 111, and this specific implementation can be: judge whether the wavelength of current quantum well layer equals the target wavelength waiting to grow epitaxial wafer 111; If not, then determine the wavelength of current quantum well layer and wait the wavelength difference of the target wavelength growing epitaxial wafer 111, and according to the corresponding relation of wavelength and temperature, determine temperature adjusting range, and adjust the temperature in time growing next quantum well layer of epitaxial wafer 111 according to the temperature of current quantum well layer and temperature adjusting range.
Concrete, when above-mentioned control device 12 is determined by judgement, the wavelength of above-mentioned current quantum well layer is not equal in time growing the target wavelength of epitaxial wafer 111, the temperature needing to adjust reaction chamber 11 is described, specifically can be divided into the following two kinds situation:
The first situation: when control device 12 determines that the wavelength of current quantum well layer deducts the target wavelength waiting to grow epitaxial wafer 111, when the wavelength difference obtained is positive number, namely the wavelength of current quantum well layer is greater than the target wavelength waiting to grow epitaxial wafer 111, illustrate and need temperature when reaction chamber 11 being grown next quantum well layer to heighten, therefore, control device 12 can further according to the corresponding relation of wavelength and temperature, the i.e. change of the length of the wavelength that every centigradetemperature is corresponding, the temperature adjusting range heightened required for determining, and this temperature adjusting range is added with the temperature of current quantum well layer, reaction chamber 11 can be obtained and growing the temperature in time growing next quantum well layer of epitaxial wafer 111, thus the temperature of the temperature that control device 12 can be determined according to this adjustment reaction chamber 11, next quantum well layer growing epitaxial wafer 111 can be waited according to the temperature growth after adjustment to make reaction chamber 11.
Exemplary, growing gallium nitride purple light epitaxial wafer is used for for above-mentioned epitaxial growth equipment, wherein, presetting treating in reaction parameter, to grow the target wavelength that epitaxial wafer 111 grows into epitaxial wafer be 360nm, the corresponding relation of wavelength and temperature is 2nm/ DEG C, treat that growth epitaxial wafer 111 needs growth 8 quantum well layers, then when treating in reaction chamber grows the buffer layer that epitaxial wafer 111 has grown 25nm successively, the undoped gallium nitride layer of 2um, after the N-type doped layer of 1.5um, when entering into growth first quantum well layer, above-mentioned measuring apparatus 13 will measure temperature and the wavelength of first quantum well layer in real time, in this example, this real time temperature is 806 DEG C, real-time wavelength is 368nm.
Now, above-mentioned control device 12 can according to this real-time wavelength and the target wavelength preset, judge to show that this real-time wavelength is greater than target wavelength, and this real-time wavelength deducts the wavelength difference that target wavelength obtains is positive number, i.e. 8nm, then control device 12 can further according to the corresponding relation 2nm/ DEG C of this wavelength difference and wavelength and temperature, the temperature adjusting range heightened required for obtaining, namely 4 DEG C, and this temperature adjusting range is added with real time temperature, reaction chamber 11 can be obtained and growing the temperature in time growing next quantum well layer of epitaxial wafer 111, namely 810 DEG C.Thus the temperature of the temperature that control device 12 can be determined according to this adjustment reaction chamber 11, next quantum well layer growing epitaxial wafer 111 can be waited according to the temperature growth after adjustment to make reaction chamber 11.Circulate with this, until this waits that the 8th quantum trap growth growing epitaxial wafer 111 completes.
The second situation: when control device 12 determines that the wavelength of current quantum well layer deducts the target wavelength waiting to grow epitaxial wafer 111, when the wavelength difference obtained is negative, namely the wavelength of current quantum well layer is less than the target wavelength waiting to grow epitaxial wafer 111, illustrate and need temperature when reaction chamber 11 being grown next quantum well layer to turn down, therefore, control device 12 can further according to the corresponding relation of wavelength and temperature, the i.e. change of the length of the wavelength that every centigradetemperature is corresponding, the temperature adjusting range turned down required for determining, and the temperature of current quantum well layer is deducted this temperature adjusting range, reaction chamber 11 can be obtained and growing the temperature in time growing next quantum well layer of epitaxial wafer 111, thus make control device 12 can adjust the temperature of reaction chamber 11 according to this temperature, next quantum well layer growing epitaxial wafer 111 can be waited according to the temperature growth after adjustment to make reaction chamber 11.
Exemplary, growing gallium nitride blue light epitaxial wafer is used for for above-mentioned epitaxial growth equipment, wherein, presetting treating in reaction parameter, to grow the target wavelength that epitaxial wafer 111 grows into epitaxial wafer be 460nm, the corresponding relation of wavelength and temperature is 2nm/ DEG C, treat that growth epitaxial wafer 111 needs growth 8 quantum well layers, then when treating in reaction chamber grows the buffer layer that epitaxial wafer 111 has grown 25nm successively, the undoped gallium nitride layer of 2um, after the N-type doped layer of 1.5um, when entering into growth first quantum well layer, above-mentioned measuring apparatus 13 will measure temperature and the wavelength of first quantum well layer in real time, in this example, this real time temperature is 750 DEG C, real-time wavelength is 456nm.
Now, above-mentioned control device 12 can according to this real-time wavelength and the target wavelength preset, judge to show that this real-time wavelength is less than target wavelength, and this real-time wavelength deducts the wavelength difference that target wavelength obtains is negative, i.e.-4nm, then control device 12 can further according to the corresponding relation 2nm/ DEG C of this wavelength difference and wavelength and temperature, the temperature adjusting range turned down required for obtaining, namely 2 DEG C, and real time temperature is deducted this temperature adjusting range, reaction chamber 11 can be obtained and growing the temperature in time growing next quantum well layer of epitaxial wafer 111, namely 748 DEG C.Thus the temperature of the temperature that control device 12 can be determined according to this adjustment reaction chamber 11, next quantum well layer growing epitaxial wafer 111 can be waited according to the temperature growth after adjustment to make reaction chamber 11.Circulate with this, until this waits that last quantum trap growth growing epitaxial wafer 111 completes.
Optionally, above-mentioned control device 12 can also at the wavelength of current quantum well layer with when being greater than predetermined threshold value wait the difference of the target wavelength growing epitaxial wafer, output alarm information, can know whether epitaxial growth equipment hardware or software failure occurs timely according to this alarm message to make process engineer, thus epitaxial growth equipment can be avoided when the hardware or software failure occurred, continue to produce epitaxial wafer, cause the situation that the yield rate of produced epitaxial wafer is lower.
Epitaxial growth equipment provided by the invention, by arranging measuring apparatus above the window of reaction chamber, the temperature waiting the current quantum well layer growing epitaxial wafer of measurement reaction chamber inside that can be real-time and wavelength, and then can according to this temperature and wavelength, automatic adjustment reaction chamber grows temperature during next quantum well layer, make to treat that growth epitaxial wafer is after growing into epitaxial wafer, the wavelength of each quantum well layer of this epitaxial wafer all can level off to or equal default target wavelength, ensure that the precision of the wavelength of epitaxial wafer, improve the yield rate of the epitaxial wafer that epitaxial growth equipment is produced.Meanwhile, because above-mentioned epitaxial growth equipment can adjust the temperature of reaction chamber automatically, need not be set by artificial experience, because this reducing human cost.
Fig. 2 is the structural representation of epitaxial growth equipment embodiment two provided by the invention, and as shown in Figure 2, in the present embodiment, above-mentioned measuring apparatus 13 can comprise temperature measuring equipment 131 and wavelength measuring apparatus 132; Wherein, temperature measuring equipment 131 and wavelength measuring apparatus 132 are respectively just to the top of window 113 being arranged on reaction chamber 11.
Concrete, said temperature measuring apparatus 131 can have for arbitrary the measuring apparatus that remote measurement waits the temperature of the current quantum well layer growing epitaxial wafer 111, continue with reference to Fig. 2, in a kind of implementation of the present invention, said temperature measuring apparatus 131 can comprise: the first laser apparatus 1311, first spectral filter 1312, hygrosensor 1313; Above-mentioned first laser apparatus 1311, may be used for current quantum well layer Emission Lasers, is reflexed on hygrosensor 1313 by laser to make current quantum well layer by the first spectral filter 1312.Said temperature detector 1313, may be used for receiving laser, and after the temperature of Laser Measurement, to control device 12 output temperature.
During specific implementation, above-mentioned first laser apparatus 1311 can be arbitrary can the laser apparatus of Emission Lasers, such as: infrared laser, ultraviolet laser etc., this first laser apparatus 1311 can be arranged on the top of the window 113 of reaction chamber 11, for to waiting the current quantum well layer Emission Lasers growing epitaxial wafer 111, to make current quantum well layer, laser is reflexed on hygrosensor 1313 by the first spectral filter 1312.In order to make above-mentioned first laser apparatus 1311 can with good input angle to waiting to grow the current quantum well layer Emission Lasers of epitaxial wafer 111, optionally, said temperature measuring apparatus 131 can also comprise speculum, wherein, this reflection unit can be arranged on directly over the window 113 of reaction chamber 11, for the laser reflection extremely current quantum well layer launched by the first laser apparatus 1311.Wherein, above-mentioned speculum can be semi-transparent speculum, and the reflection angle of this speculum can be arranged according to the demand of user.Above-mentioned first spectral filter 1312 can be arranged on the top of the window 113 of reaction chamber 11, and cover on the photosurface of hygrosensor 1313, veiling glare except the laser that current quantum well layer reflects is detected in order to avoid hygrosensor 1313, thus make hygrosensor 1313 according to the laser of this current quantum well layer reflection, the accuracy of the temperature of the current quantum well layer exported.Wherein, the wavelength of laser that the transmissivity of above-mentioned first spectral filter 1312 can be launched according to above-mentioned first laser apparatus 1311 is determined.
Above-mentioned wavelength measuring apparatus 132 can have for arbitrary the measuring apparatus that remote measurement waits the wavelength of the current quantum well layer growing epitaxial wafer 111, continue with reference to Fig. 2, then in a kind of implementation of the present invention, above-mentioned wavelength measuring apparatus 132 can comprise: second laser 1321, second spectral filter 1322, optical spectrum instrumentation 1323; Above-mentioned second laser 1321, may be used for current quantum well layer Emission Lasers, to excite the outside emission of light of current quantum well layer.Above-mentioned optical spectrum instrumentation 1323, may be used for the light being received the transmitting of current quantum well layer by the second spectral filter 1322, and after the wavelength measuring light, to control device 12 output wavelength.
During specific implementation, above-mentioned second laser 1321 can excite for arbitrary the laser apparatus waiting to grow epitaxial wafer 111 emission of light, such as, the solid laser or gas laser etc. of the laser of 325nm, 405nm wavelength can be launched, this second laser 1321 can be arranged on the top of the window 113 of reaction chamber 11, for to waiting the current quantum well layer Emission Lasers growing epitaxial wafer 111, to excite the outside emission of light of current quantum well layer.In order to make above-mentioned second laser 1321 can with good input angle to waiting to grow the current quantum well layer Emission Lasers of epitaxial wafer 111, optionally, above-mentioned wavelength measuring apparatus 132 can also comprise speculum, wherein, this reflection unit can be arranged on directly over the window 113 of reaction chamber 11, for the laser reflection extremely current quantum well layer launched by second laser 1321.Wherein, above-mentioned speculum can be semi-transparent speculum, and the reflection angle of this speculum can be arranged according to the demand of user.Above-mentioned second spectral filter 1322 can be arranged on the top of the window 113 of reaction chamber 11, and cover on the photosurface of optical spectrum instrumentation 1323, veiling glare except the light that current quantum well layer is launched is detected to avoid optical spectrum instrumentation 1323, thus make the light that optical spectrum instrumentation 1323 is launched according to this current quantum well layer, the accuracy of the wavelength of the current quantum well layer exported.Wherein, the transmissivity of above-mentioned second spectral filter 1322 can be determined according to the wavelength of the light of above-mentioned current quantum well layer transmitting.
Epitaxial growth equipment provided by the invention, by arranging measuring apparatus above the window of reaction chamber, the temperature waiting the current quantum well layer growing epitaxial wafer of measurement reaction chamber inside that can be real-time and wavelength, and then can according to this temperature and wavelength, automatic adjustment reaction chamber grows temperature during next quantum well layer, make to treat that growth epitaxial wafer is after growing into epitaxial wafer, the wavelength of each quantum well layer of this epitaxial wafer all can level off to or equal default target wavelength, ensure that the precision of the wavelength of epitaxial wafer, improve the yield rate of the epitaxial wafer that epitaxial growth equipment is produced.Meanwhile, because above-mentioned epitaxial growth equipment can adjust the temperature of reaction chamber automatically, need not be set by artificial experience, because this reducing human cost.
One of ordinary skill in the art will appreciate that: all or part of step realizing above-mentioned each embodiment of the method can have been come by the hardware that programmed instruction is relevant.Aforesaid program can be stored in a computer read/write memory medium.This program, when performing, performs the step comprising above-mentioned each embodiment of the method; And aforesaid storage media comprises: ROM, RAM, magnetic disc or CD etc. various can be program code stored medium.
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. an epitaxial growth equipment, is characterized in that, comprising: reaction chamber, control device, measuring apparatus; Wherein, described control device is connected with described measuring apparatus and described reaction chamber respectively; Treat that growth epitaxial wafer is arranged in the growing carrier of described reaction chamber inside; Described measuring apparatus is arranged on the top of the window of described reaction chamber;
Described measuring apparatus, for waiting temperature and the wavelength of the current quantum well layer growing epitaxial wafer described in measuring in real time, and sends to described control device by the temperature of described current quantum well layer and wavelength;
Described control device, wait to grow epitaxial wafer described in the growth of described reaction chamber for controlling, and according to the temperature of described current quantum well layer and wavelength, and default reaction parameter, adjust described reaction chamber in the temperature described in growing in time growing next quantum well layer of epitaxial wafer; Described default reaction parameter comprises the corresponding relation of target wavelength, wavelength and the temperature waiting to grow epitaxial wafer.
2. equipment according to claim 1, is characterized in that, described control device, also for when the wavelength of described current quantum well layer and the difference of the described target wavelength wait growing epitaxial wafer are greater than predetermined threshold value, and output alarm information.
3. equipment according to claim 1 and 2, is characterized in that, described measuring apparatus comprises temperature measuring equipment and wavelength measuring apparatus;
Described temperature measuring equipment and described wavelength measuring apparatus are respectively just to the top of window being arranged on described reaction chamber.
4. equipment according to claim 3, is characterized in that, described temperature measuring equipment comprises: the first laser apparatus, the first spectral filter, hygrosensor;
Described first laser apparatus, for described current quantum well layer Emission Lasers, reflexes to described hygrosensor on by described laser by described first spectral filter to make described current quantum well layer;
Described hygrosensor, for receiving described laser, and after the temperature measuring described laser, exports described temperature to described control device.
5. equipment according to claim 4, is characterized in that, described temperature measuring equipment also comprises: speculum;
Described speculum is arranged on directly over the window of described reaction chamber, for the described laser reflection extremely described current quantum well layer launched by described first laser apparatus.
6. equipment according to claim 5, is characterized in that, described first laser apparatus is infrared laser.
7. equipment according to claim 3, is characterized in that, described wavelength measuring apparatus comprises: second laser, the second spectral filter, optical spectrum instrumentation;
Described second laser, for described current quantum well layer Emission Lasers, to excite the outside emission of light of described current quantum well layer;
Described optical spectrum instrumentation, for being received the light that described current quantum well layer is launched by the second spectral filter, and after the wavelength measuring described light, exports described wavelength to described control device.
8. equipment according to claim 7, is characterized in that, described wavelength measuring apparatus also comprises: speculum;
Described speculum is arranged on directly over the window of described reaction chamber, for the laser reflection extremely described current quantum well layer launched by described second laser.
9. equipment according to claim 8, is characterized in that, described second laser is solid laser or gas laser.
10. equipment according to claim 1, is characterized in that, described control device, for according to the temperature of described current quantum well layer and wavelength, and default reaction parameter, adjust described reaction chamber in the temperature described in growing in time growing next quantum well layer of epitaxial wafer, specifically comprise:
Described control device, specifically for judging the wavelength of described current quantum well layer is waited to grow the target wavelength of epitaxial wafer described in whether equaling; If not, then determine the wavelength of described current quantum well layer and the described wavelength difference waiting the target wavelength growing epitaxial wafer, and according to the corresponding relation of described wavelength and temperature, determine temperature adjusting range, and the temperature according to the temperature of described current quantum well layer and the adjustment of described temperature adjusting range in time growing next quantum well layer of epitaxial wafer.
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| CN201510988437.5A CN105506733A (en) | 2015-12-23 | 2015-12-23 | Epitaxial growth equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110656322A (en) * | 2019-09-11 | 2020-01-07 | 厦门三安光电有限公司 | Method, device and equipment for continuously growing epitaxial wafer and storage medium |
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