CN220672518U - Temperature control module for wafer processing equipment and wafer processing equipment - Google Patents
Temperature control module for wafer processing equipment and wafer processing equipment Download PDFInfo
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- CN220672518U CN220672518U CN202321609298.7U CN202321609298U CN220672518U CN 220672518 U CN220672518 U CN 220672518U CN 202321609298 U CN202321609298 U CN 202321609298U CN 220672518 U CN220672518 U CN 220672518U
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- 238000012545 processing Methods 0.000 title claims abstract description 64
- 230000000630 rising effect Effects 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 27
- 230000001629 suppression Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 43
- 230000005764 inhibitory process Effects 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 45
- 230000001276 controlling effect Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The utility model provides a temperature control module for wafer processing equipment and the wafer processing equipment, wherein the wafer processing equipment comprises a chamber and the temperature control module, and comprises the following components: a heating assembly, a temperature measuring assembly; the controller is used for receiving the feedback temperature of the temperature measuring component and calculating to obtain a control signal according to the set temperature and the feedback temperature, wherein the control signal is used for controlling the power of the heating component; the controller comprises an addition unit, a PID module, a temperature suppression module and an execution module which are electrically connected in sequence; the temperature suppression module is used for judging whether the temperature rising rate of the feedback temperature exceeds a set temperature rising rate threshold value, if not, a final output value is obtained, and the final output value is equal to the output value; if so, an operation of performing temperature-suppressing processing on the output value to obtain a final output value is performed to suppress an excessively rapid temperature rise. The temperature control module provided by the utility model can control the temperature rising rate of the wafer temperature, and effectively eliminates the influence of the too fast temperature rising on equipment and the wafer.
Description
Technical Field
The utility model relates to the field of wafer processing equipment, in particular to a temperature control module for wafer processing equipment.
Background
In the semiconductor process, when a wafer is processed in a chamber of wafer processing equipment, process gas needs to be introduced into the chamber, and the process gas reacts with the surface of the wafer at a certain process temperature to finish the operation of wafer surface processing, wherein the operation can be film growth, pre-cleaning, etching and the like. In the whole process, the process temperature has a great influence on the surface treatment effect of the wafer, so that the process temperature needs to be concerned at all times, the process temperature is stabilized around the set temperature sp through the temperature control module, and the output power of the heating component is regulated and controlled in real time according to the actual process temperature.
However, the following problems still exist in the surface treatment process of the wafer in the prior art:
in the prior art, the output power of the heating component is controlled to control the process temperature, but the temperature rise of the process temperature in the prior art is not limited, the phenomenon of too fast temperature rise in a short time is easy to occur in the process of regulating and controlling the chamber temperature, the process effect on the surface of the wafer can be influenced, and the service life of the wafer processing equipment can be reduced.
Disclosure of Invention
The utility model aims to provide a temperature control module for wafer processing equipment, which is provided with a temperature suppression module and can control the temperature rising rate of the wafer temperature, thereby effectively eliminating the influence of the too fast temperature rising on the equipment and the wafer.
In order to achieve the above object, the present utility model is realized by the following technical scheme:
there is provided a temperature control module for a wafer processing apparatus including a chamber and a temperature control module connected to the chamber for controlling a process temperature, comprising:
a heating assembly for heating a wafer disposed within the chamber;
the temperature measuring component is used for measuring the process temperature of the wafer and outputting feedback temperature;
the controller is respectively connected with the temperature measuring component and the heating component, and is used for receiving the feedback temperature of the temperature measuring component and calculating and obtaining a control signal according to the set temperature and the feedback temperature, wherein the control signal is used for controlling the power of the heating component;
the controller comprises an addition unit, a PID module, a temperature suppression module and an execution module which are electrically connected in sequence;
the adding unit is used for obtaining a temperature difference according to the feedback temperature and the set temperature;
the PID module comprises a plurality of sub-PID modules, different sub-PID modules are selected to execute data processing according to the acquired temperature difference, and the sub-PID modules acquire output values according to the temperature difference processing;
the temperature suppression module is used for judging whether the temperature rising rate of the feedback temperature exceeds a set temperature rising rate threshold value, if not, a final output value is obtained, and the final output value is equal to the output value; if so, performing temperature inhibition processing on the output value to obtain a final output value so as to inhibit the temperature from rising too fast;
and the execution module is used for obtaining a control signal based on the final output value so as to control the power of the heating assembly.
Further, the proportion parameters among the sub-PID modules are different, the PID modules select different sub-PID modules to execute data processing according to the acquired temperature difference, and specifically, the larger the temperature difference is, the larger the proportion parameters of the selected sub-PID modules to execute data processing are; the smaller the temperature difference is, the smaller the proportion parameter of the sub-PID module used for executing data processing is.
Further, the number of the sub-PID modules is 5-10.
Further, the temperature suppression module comprises a first judgment module, wherein the first judgment module is respectively connected with the temperature measuring component, the PID module and the execution module and is used for receiving the feedback temperature output by the temperature measuring component and the output value of the PID module and judging whether the temperature rising rate of the feedback temperature exceeds a temperature rising rate threshold value.
Further, the temperature suppression module further comprises a suppression module, and the suppression module is connected with the first judgment module and is used for executing the operation of performing temperature suppression processing based on a ramp function on the output value of the PID module and obtaining a final output value when the judgment result of the first judgment module is yes so as to suppress the temperature from rising too fast.
Further, the first judging module is further configured to execute an operation that the final output value is equal to the output value of the PID module when the judging result is no, and transmit the final output value to the executing module.
Further, the temperature suppression module further comprises a second judgment module, and the second judgment module is respectively connected with the suppression module, the execution module and the first judgment module and is used for judging whether the time when the temperature rising rate of the feedback temperature does not exceed the temperature rising rate threshold exceeds the threshold time after the suppression module performs suppression processing on the output value.
Further, the second judging module is further configured to perform an operation of transmitting a final output value obtained by the temperature suppressing process to the executing module when the judging result thereof is no; the second judging module is further configured to perform an operation of transmitting a final output value equal to the output value of the PID module in the first judging module to the executing module when the judging result is yes.
Further, the heating component is a heating lamp.
Further, the temperature measuring component is a pyrometer.
The present utility model also provides a wafer processing apparatus characterized by comprising:
a chamber;
the temperature control module for the wafer processing equipment is connected with the chamber and used for controlling the process temperature.
Compared with the prior art, the utility model has the following advantages:
1. the temperature control module is provided with the temperature inhibition module, so that the temperature rising rate of the process temperature of the wafer output by the temperature measuring assembly can be monitored and regulated, the phenomenon that the temperature of the wafer rises too fast in unit time can be prevented, the process quality of the wafer is improved, and the service life of the chamber is prolonged.
2. The PID module of the temperature control module classifies the temperature difference, improves the accuracy of PID regulation, reduces the temperature oscillation amplitude, can effectively control the temperature in a smaller fluctuation range, and improves the performance of PID regulation.
Drawings
For a clearer description of the technical solutions of the present utility model, the drawings that are needed in the description will be briefly introduced below, it being obvious that the drawings in the following description are one embodiment of the present utility model, and that, without inventive effort, other drawings can be obtained by those skilled in the art from these drawings:
FIG. 1 is a schematic diagram of a wafer processing apparatus according to the present utility model;
fig. 2 is a schematic structural diagram of a temperature control module provided by the present utility model.
Detailed Description
The following provides a further detailed description of the proposed solution of the utility model with reference to the accompanying drawings and detailed description. The advantages and features of the present utility model will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the utility model. For a better understanding of the utility model with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the utility model to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the utility model, are included in the spirit and scope of the utility model which is otherwise, without departing from the spirit or essential characteristics thereof.
Fig. 1 is a schematic view showing a structure of a wafer processing apparatus according to the present utility model, which is used for processing a wafer surface in a semiconductor field, and an epitaxial apparatus is taken as an example of the wafer processing apparatus according to the present utility model. The wafer pre-cleaning apparatus includes a chamber 100 and a temperature control module 200, wherein the chamber 100 is used to provide a processing space for performing an epitaxial growth process on a surface of a wafer W within the chamber. The chamber 100 is comprised of an upper dome 101, a lower dome 108, a sidewall 120, an upper liner 102, and a lower liner 111 in sealed connection. The upper dome 101 is in a shape of a substantially convex circle, the lower dome 108 is in a shape of a substantially umbrella, and the upper dome 101 and the lower dome 108 are both made of quartz; the upper liner 104 and the lower liner 107 are each generally annular and are disposed on the inner surface of the side wall 120, and the chambers secure the upper dome 101 and the lower dome 108 to the side wall 120 via the upper flange 104 and the lower flange 107, respectively. The inside of the chamber is also provided with a base 105 for carrying the wafer W, the base 105 is connected to the rotation support shaft 110, and the base 105 is rotated and moved up and down by the rotation support shaft 110, so as to drive the base 105 and the wafer W to integrally rotate around the central axis of the rotation support shaft 110 or drive the base 105 to move up and down. One end of the chamber is provided with an air inlet, the other end opposite to the air inlet is provided with an air outlet, process gas flows into the chamber from the air inlet, reaches the surface of the wafer W, and is discharged out of the chamber through the air outlet after a required process is executed in the chamber. The chamber is further provided with a wafer transfer port 113 in a vertical direction of the inlet and outlet lines for transferring wafers W into and out of the chamber.
The temperature control module 200 of the wafer processing apparatus is connected to the chamber 100 for controlling the process temperature. The temperature control module 200 includes a heating assembly 209, a temperature measurement assembly 203, and a controller. The heating element 209 is disposed above and/or below the chamber 100 to heat the chamber by radiant heating. During processing, the heating assembly 209 heats the wafer W to a process temperature so that the process gases entering the chamber and the wafer surface undergo the desired process reactions.
Meanwhile, in order to facilitate understanding of the real-time process temperature of the wafer W in the chamber, the temperature measuring component 203 of the wafer processing apparatus is configured to measure the process temperature of the wafer W in real time and output the feedback temperature pv. The temperature sensing assembly 203 is disposed above and/or below the chamber and measures through the upper dome 101 and/or lower dome 108.
The controller is respectively connected with the temperature measuring component 203 and the heating component 209, and is used for receiving the feedback temperature of the temperature measuring component 209, calculating and obtaining a control signal according to the set temperature and the feedback temperature, wherein the control signal is used for controlling the power of the heating component 209 so as to change the process temperature in the chamber;
fig. 2 shows a schematic structural diagram of a temperature control module 200 provided by the present utility model. As shown in fig. 2, the controller includes an adding unit 202, a PID module 205, a temperature suppressing module 207, and an executing module 211 electrically connected in sequence; the adding unit 202 is configured to obtain a temperature difference e (t) according to the feedback temperature pv and the set temperature sp output by the temperature measuring component 203; the PID module 205 includes a plurality of sub PID modules, where the PID module 205 performs data processing by using different sub PID modules according to the obtained temperature difference, and the sub PID modules obtain an output value according to the temperature difference processing; the temperature suppression module 207 is configured to determine whether the temperature rising rate of the feedback temperature exceeds a set temperature rising rate threshold, and if not, obtain a final output value, where the final output value is equal to the output value; if so, performing temperature inhibition processing on the output value to obtain a final output value so as to inhibit the temperature from rising too fast; the execution module 211 is configured to obtain a control signal to control the power of the heating element 209 based on the final output value to ultimately change the process temperature of the wafer surface within the chamber.
Optionally, the proportion parameters among the plurality of sub-PID modules are different, and the PID module 205 selects different sub-PID modules to perform data processing according to the obtained temperature difference, specifically, the larger the temperature difference is, the larger the proportion parameter of the selected sub-PID module to perform data processing is; the smaller the temperature difference is, the smaller the proportion parameter of the sub-PID module used for executing data processing is. For example, when the temperature difference is between 0 ℃ and 5 ℃, a first sub-PID module LOOP1 is selected to perform data processing to obtain an output value LOOP1_mv1, wherein the first sub-PID module LOOP1 includes a proportional parameter LOOP1_p, an integral parameter LOOP1_i, and a differential parameter LOOP1_d; when the temperature difference is 5-10 ℃, a second sub-PID module LOOP2 is selected to perform data processing to obtain an output value LOOP2_MV2, wherein the second sub-PID module LOOP2 comprises a proportional parameter LOOP2_P, an integral parameter LOOP2_I and a differential parameter LOOP2_D; when the temperature difference is 10-15 ℃, selecting an N-th sub-PID module LOOPN to execute data processing to obtain an output value LOOPN_ MVN, wherein the N-th sub-PID module LOOPN comprises a proportional parameter LOOPN_P, an integral parameter LOOPN_I and a differential parameter LOOPN_D; wherein, the proportion parameter LOOP1_P is less than the proportion parameter LOOP2_P is less than the proportion parameter LOOPN_P; alternatively, the temperature difference is 5 ℃ at a level.
Optionally, the number of the sub-PID modules is 5-10.
Optionally, the temperature suppression module 207 includes a first determining module, where the first determining module is connected to the temperature measuring component 203, the PID module 205, and the executing module 211, and is configured to receive the feedback temperature output by the temperature measuring component 203 and the output value of the PID module 205, and determine whether the temperature rising rate of the feedback temperature exceeds a temperature rising rate threshold.
Optionally, the temperature suppression module 207 further includes a suppression module, which is connected to the first determination module, and is configured to perform an operation of performing a temperature suppression process based on a ramp function on the output value of the PID module 205 and obtaining a final output value when the determination result of the first determination module is yes, so as to suppress an excessive temperature rise.
Optionally, the first determining module is further configured to perform an operation that the final output value y (t) is equal to the output value of the PID module 205 when the determination result is no, and transmit the final output value y (t) to the executing module 211.
Optionally, the temperature suppression module 207 further includes a second determining module, where the second determining module is connected to the suppression module, the executing module 211, and the first determining module, and is configured to determine, after the suppression module performs the suppression processing on the output value, whether a time when the temperature rising rate of the feedback temperature does not exceed the temperature rising rate threshold exceeds a threshold time.
Optionally, the second judging module is further configured to perform an operation of transmitting the final output value y (t) obtained by the temperature suppressing process to the executing module 211 when the judging result is no; the second judging module is further configured to perform an operation of transmitting, to the executing module 211, a final output value y (t) equal to the output value of the PID module in the first judging module, when the judging result thereof is yes.
Optionally, the temperature rise rate threshold is any value between 5 and 20 ℃/sec.
Optionally, the heating element 209 is a heating lamp.
Optionally, the temperature measuring component 203 is a pyrometer.
According to the temperature control module for the wafer processing equipment, the temperature control module is provided with the temperature inhibition module, so that the temperature rising rate of the process temperature of the wafer output by the temperature measuring assembly can be monitored and regulated, the phenomenon that the wafer rises too fast in unit time can be prevented, the process quality of the wafer is improved, and the service life of the chamber is prolonged. Meanwhile, the PID module of the temperature control module classifies the temperature difference, avoids data processing on the temperature difference in the same temperature section, improves the accuracy of PID adjustment, and reduces the temperature oscillation amplitude.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present utility model has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the utility model. Many modifications and substitutions of the present utility model will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the utility model should be limited only by the attached claims.
Claims (11)
1. A temperature control module for a wafer processing apparatus, the wafer processing apparatus comprising a chamber and a temperature control module, the temperature control module being coupled to the chamber for controlling a process temperature, comprising:
a heating assembly for heating a wafer disposed within the chamber;
the temperature measuring component is used for measuring the process temperature of the wafer and outputting feedback temperature;
the controller is respectively connected with the temperature measuring component and the heating component, and is used for receiving the feedback temperature of the temperature measuring component and calculating and obtaining a control signal according to the set temperature and the feedback temperature, wherein the control signal is used for controlling the power of the heating component;
the controller comprises an addition unit, a PID module, a temperature suppression module and an execution module which are electrically connected in sequence;
the adding unit is used for obtaining a temperature difference according to the feedback temperature and the set temperature;
the PID module comprises a plurality of sub-PID modules, different sub-PID modules are selected to execute data processing according to the acquired temperature difference, and the sub-PID modules acquire output values according to the temperature difference processing;
the temperature suppression module is used for judging whether the temperature rising rate of the feedback temperature exceeds a set temperature rising rate threshold value, if not, a final output value is obtained, and the final output value is equal to the output value; if so, performing temperature inhibition processing on the output value to obtain a final output value so as to inhibit the temperature from rising too fast;
and the execution module is used for obtaining a control signal based on the final output value so as to control the power of the heating assembly.
2. The temperature control module for a wafer processing apparatus according to claim 1, wherein the proportion parameters among the plurality of sub-PID modules are different, the PID modules select different sub-PID modules to perform data processing according to the obtained temperature difference, and specifically, the larger the temperature difference is, the larger the proportion parameters of the selected sub-PID modules to perform data processing are; the smaller the temperature difference is, the smaller the proportion parameter of the sub-PID module used for executing data processing is.
3. The temperature control module for a wafer processing apparatus as recited in claim 1, wherein the number of sub-PID modules is 5-10.
4. The temperature control module for a wafer processing apparatus according to claim 1, wherein the temperature suppressing module comprises a first judging module connected to the temperature measuring assembly, the PID module and the execution module, respectively, for receiving the feedback temperature output by the temperature measuring assembly and the output value of the PID module, and judging whether the temperature rising rate of the feedback temperature exceeds a temperature rising rate threshold.
5. The temperature control module for a wafer processing apparatus according to claim 4, wherein the temperature suppressing module further comprises a suppressing module connected to the first judging module for performing a ramp function-based temperature suppressing process on the output value of the PID module and obtaining a final output value when the judgment result of the first judging module is yes, so as to suppress an excessively rapid temperature rise.
6. The temperature control module for a wafer processing apparatus according to claim 5, wherein the first judging module is further configured to perform an operation in which a final output value is equal to an output value of the PID module and to transmit the final output value to the executing module when the judging result is no.
7. The temperature control module for a wafer processing apparatus as set forth in claim 6, wherein the temperature suppressing module further comprises a second judging module connected to the suppressing module, the executing module, and the first judging module, respectively, for judging whether a time during which a temperature rising rate of the feedback temperature does not exceed a temperature rising rate threshold exceeds a threshold time after the suppressing module suppresses the output value.
8. The temperature control module for a wafer processing apparatus according to claim 7, wherein the second judging module is further configured to perform an operation of transmitting a final output value obtained by the temperature suppressing process to the executing module, when a judgment result thereof is negative; the second judging module is further configured to perform an operation of transmitting a final output value equal to the output value of the PID module in the first judging module to the executing module when the judging result is yes.
9. The temperature control module for a wafer processing apparatus of claim 1, wherein the heating assembly is a heating lamp.
10. The temperature control module for a wafer processing apparatus of claim 1, wherein the temperature sensing component is a pyrometer.
11. A wafer processing apparatus, comprising:
a chamber;
a temperature control module for a wafer processing apparatus as recited in any one of claims 1-10, coupled to the chamber for controlling process temperature.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321609298.7U CN220672518U (en) | 2023-06-21 | 2023-06-21 | Temperature control module for wafer processing equipment and wafer processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321609298.7U CN220672518U (en) | 2023-06-21 | 2023-06-21 | Temperature control module for wafer processing equipment and wafer processing equipment |
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| CN220672518U true CN220672518U (en) | 2024-03-26 |
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| CN202321609298.7U Active CN220672518U (en) | 2023-06-21 | 2023-06-21 | Temperature control module for wafer processing equipment and wafer processing equipment |
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