CN105490671B

CN105490671B - High-isolation wideband switch

Info

Publication number: CN105490671B
Application number: CN201510629841.3A
Authority: CN
Inventors: Y·A·阿特赛尔; T·库尔克尤克鲁
Original assignee: Analog Devices Technology
Current assignee: Analog Devices Technology
Priority date: 2014-10-01
Filing date: 2015-09-29
Publication date: 2019-07-16
Anticipated expiration: 2035-09-29

Abstract

The present invention relates to high-isolation wideband switch.In an arrangement, which includes integrated antenna package, which has IC chip, which has more than first a leads, and a lead more than first is located on the package substrate with more than second a leads.The first lead of IC chip is connected to the second lead of package substrate via bonding wire, in response to the RF signal being applied on integrated antenna package, occurs first between first lead and IC chip and is electrically coupled.Bonding wire has to be electrically coupled in response to the second of RF signal, and bonding wire is arranged so that second is electrically coupled to be electrically coupled in selected frequency band with first and matches, and is electrically coupled hence for the totality of the RF signal reduction integrated antenna package in selected frequency band.

Description

High-isolation wideband switch

The cross reference of related application

This application claims U.S. Provisional Application No. 62/058,507 equity submitted on October 1st, 2014, the Shens Full text please is merged in this article by reference.

Technical field

The technology of description relates generally to high-isolation wideband switch.

Background technique

Broadband control product, such as switch or the four sides of attenuator without lead (QFN) encapsulate, including will include switch Or the bonding wire that Small Scale Integration (IC) chip of attenuator is electrically connected substantially with encapsulation.It is including this broadband control product In, cost is reduced by minimizing chip and package dimension.However, the isolation and loss parameter and IC core of product Piece, bonding wire are related with spacing with the size of encapsulation.Two main contributors of the isolation of switch are on piece coupling and encapsulation Crosstalk.

Summary of the invention

In one implementation, embodiment of the present invention includes integrated antenna package, which has integrated Circuit chip, the IC chip have more than first a leads, and a lead more than described first is located in be drawn with more than second On the package substrate of line.In this implementation, a lead more than the first of IC chip is connected to package substrate via bonding wire A lead more than second, and the RF signal in response to being applied on integrated antenna package, by IC chip more than first First occurs between a lead to be electrically coupled.More than first a leads and the bonding wire of more than second a pin interconnections are had and are believed in response to RF Number second be electrically coupled, and bonding wire is arranged so that second is electrically coupled to be electrically coupled in selected frequency band with first and matches, thus It is electrically coupled for the RF signal in selected frequency band to reduce the totality of integrated antenna package.

In one implementation, IC chip includes the first surface and second surface being positioned to away from each other, and one Bonding wire includes RF input bonding wire, another bonding wire includes RF output bonding wire, and RF input bonding wire is attached on the first surface Positioned at the lead of the ic core on piece, RF output bonding wire is attached to the lead on second surface.One other Realization in, RF input bonding wire and RF output bonding wire are attached to ic core on piece to being positioned to away from each other.

In one implementation, bonding wire defines the vertical component effect upwardly extended from more than first a leads of ic core on piece And more than first a outwardly extending horizontal parts of lead from ic core on piece.In this implementation, bonding wire navigates to predetermined In orientation, so that the totality for being electrically coupled integrated circuit in the selected frequency band of component reduction between horizontal bonding wire is electrically coupled.

In one implementation, the first of integrated antenna package is electrically coupled including more than first on an integrated circuit die occur Capacitive coupling and generation between the RF input lead and RF output lead of a lead input the horizontal part and RF of bonding wire in RF Export the inductive coupling between the horizontal part of bonding wire.In this implementation, RF inputs the horizontal component of bonding wire and RF exports bonding wire Horizontal component carries out angular adjustment relative to each other, so that inductive coupling and RF input bonding wire and RF output bonding wire and integrated circuit Capacitive coupling out-phase between chip.In one implementation, the opposite of the horizontal part of RF input bonding wire and RF output bonding wire is adjusted Angle orientation, thus due in about selected frequency band bondwire inductance coupling with the chip capacity of ic core on piece couple out-phase And isolation recess is limited on isolation curve.

In one implementation, RF exports bonding wire and is positioned proximate to ground connection bonding wire, and neighbouring RF exports bonding wire, so that it is defeated to reduce RF Enter the inductive coupling between bonding wire and RF output bonding wire.Then, RF exports bonding wire relative to RF input bonding wire orientation to reduce collection It is electrically coupled at the totality of circuit package.

In a further implementation, embodiment of the present invention includes radio frequency (RF) switch package, with integrated circuit (IC) Chip, IC chip include the RF switch being placed on package substrate.IC chip inputs bonding wire and RF output bonding wire and envelope via RF Fill substrate electrical connection.When RF signal is applied in RF switch package, is inputted between bonding wire and RF output bonding wire in RF and form the One is electrically coupled, and forms second in IC chip and is electrically coupled.In this implementation, RF inputs first between bonding wire and RF output bonding wire It is electrically coupled second at least part being electrically coupled for being chosen so as to offset IC chip in scheduled frequency range.

In one implementation, integrated circuit (IC) encapsulates, comprising: IC chip comprising multiple first input leads and more A first output lead, the first input lead correspond respectively to the first output lead；Package substrate comprising multiple second inputs Lead and multiple second output leads, the IC chip are located on package substrate；Multiple bonding wires, are separately connected: i) first Input lead and the second input lead and ii) the first output lead and the second output lead, wherein each corresponding first is defeated Enter lead and the first output lead to being configured as transmitting radio frequency (RF) signal between them, and wherein bonding wire is arranged to Due to RF signal transmission caused by be electrically coupled and for each RF signal selected frequency band is limited on isolation curve be isolated it is recessed Mouthful.

In order to summarize the purpose of advantage that is of the invention and realizing compared with the existing technology, there have been described of the invention Some targets and advantage.However, it is to be understood that not necessarily any specific embodiment according to the present invention can be realized All these targets or advantage.Thus, for example, it will be appreciated by those skilled in the art that can be as realized or optimizing herein It instructs and an advantage or a group of advantages that shows is without realizing other targets or advantage for instructing or show herein Mode implements or implements the present invention.

All these embodiments are intended to fall within the scope of present invention disclosed herein.According to the following detailed of reference attached drawing Describe in detail bright, these embodiments and other embodiments will become obvious those skilled in the art, and the present invention is not It is limited to disclosed any specific embodiment.

Detailed description of the invention

According to detailed description and accompanying drawings below, these schemes and other schemes be will be apparent, these attached drawings It is intended to illustrate, and is not intended to the limitation present invention, in which:

Fig. 1 is the figure of the bonding wire connection between IC chip and QFN package substrate according to embodiment.

Fig. 2 is the side view for illustrating the illustrative bonding wire shape according to embodiment.

Fig. 3 is the figure in the embodiment coupling source in the IC package illustrated according to embodiment.

Fig. 4 is the figure of the method for the coupling between a kind of change bonding wire illustrated according to embodiment.

Fig. 5 is to illustrate the figure that bonding wire configuration is exported according to each RF of embodiment.

Fig. 6 is the curve graph for illustrating the isolation of RF output bonding wire configuration shown in fig. 5.

Fig. 7 is the figure of the bonding wire connection between the IC chip and QFN package substrate illustrated according to embodiment.

Specific embodiment

Each embodiment disclosed herein is related to the electricity between the IC chip and package substrate with improved isolation Connection.IC chip can be installed on package substrate to carry out telecommunication via encapsulation and biggish electronic equipment or system.? In following embodiment, as the illustrative embodiment of IC chip, radio frequency (RF) switch is described in detail.However, this IC chip disclosed in text may include the IC chip of any suitable type, such as attenuator, be usually used in for example transceiver, source, In the application such as analyzer.IC chip can use various encapsulation technologies and be encapsulated in packaging body.The integrated equipment of encapsulation can be with It is installed on system board, to be integrated into biggish electronic equipment or system.

In some implementations, IC chip is connected to package substrate via multiple bonding wires.Bonding wire forms the lead of IC chip Being electrically connected between the lead of package substrate.Various designs consideration in terms of manufacture IC chip and package substrate will affect envelope The isolation of dress and loss (or gain).For example, the insertion loss and isolation of encapsulation can be coupled or be encapsulated crosstalk due on piece And change, this will make below with reference to attached drawing and be described in more detail.

Fig. 1 is the figure of the bonding wire connection between the IC chip and QFN package substrate illustrated according to embodiment.In Fig. 1 Embodiment in, IC chip 20 include multiple leads 30, multiple leads 30 include RF input lead 33 and RF output lead 31. QFN package substrate further includes multiple leads 40, and the multiple lead 40 draws via multiple bonding wires 51 and 53 with IC chip 20 Line 30 is electrically connected.In the embodiment depicted in fig. 1, the RF input lead 33 and RF output lead 31 of IC chip 20 respectively via RF input bonding wire 53 and RF output bonding wire 51 are connected to QFN package substrate 10.

In the embodiment and following explanation of Fig. 1, IC chip 20 is described as by being connected to QFN encapsulation 10 RF switchs to be embodied.However, the embodiment of described technology is without being limited thereto, IC chip 20 can be and any type Suitable package substrate connection any suitable type IC chip 20.In the following description, term RF switch can be used to Refer to IC chip 20 itself or total packaging part including IC chip 20, bonding wire 51 and 53 and QFN encapsulation 10.

Fig. 2 shows the illustrative bonding wire shapes according to embodiment.Fig. 2 is that RF input bonding wire 53 and RF export bonding wire 51, the side view of RF input lead 33 and RF output lead 31 and QFN encapsulation input lead 43 and QFN encapsulation output lead 41 Figure.Fig. 2 illustrates the exemplary geometric structure of RF input bonding wire 53 and RF output bonding wire 51, and still, the bonding wire shape of diagram can To be applied to arbitrary bonding wire 51 and 53.In order to form electricity between the lead 30 and 40 and QFN package substrate 10 of IC chip 20 Connection, bonding wire 53 and 51 extend in an approximate vertical direction from IC chip lead 33 and 31 first, then substantially horizontally extend To QFN package lead 43 and 41.The shape of bonding wire 53 and 51 shown in Fig. 2 is only an embodiment, the shape of bonding wire 51 and 53 Shape is not limited to the shape of diagram.

Fig. 3 is the figure in the embodiment source of the signal coupling in the IC package illustrated according to embodiment.When RF signal is logical When crossing RF input bonding wire 53 and the RF output transmission of bonding wire 51, the physical structure of bonding wire 53 and 51 and IC chip 20 is drawn in the signal Enter coupling, coupling can have adverse effect the isolation of RF switch package.Fig. 3, which is conceptually illustrated, to input bonding wire 53 in RF The three kinds of different coupling sources occurred between RF output bonding wire 51.The coupling of IC chip 20 itself can be modeled as IC chip 20 Lead 33 and 31 between capacitive coupling.IC chip 20 coupling can be described as on piece coupling, coupling be due to RF switch it is limited Caused by off-state capacitance.

In addition, signal coupling is introduced between RF input bonding wire 53 and RF output bonding wire 51 and can be conceptually divided into The coupling of the coupling and the horizontal part generation due to bonding wire 53 and 51 that are generated due to the vertical component effect of bonding wire 53 and 51.RF input weldering Coupling between line 53 and RF output bonding wire 51 can be modeled as inductive coupling.RF inputs bonding wire 53 and RF exports hanging down for bonding wire 51 Inductive coupling between straight portion enhances to be coupled on the capacitance sheet of IC chip 20.Therefore, at least one embodiment, control The geometry of the horizontal part of RF input bonding wire 53 and RF output bonding wire 51 is to deviate IC chip 20 and RF input bonding wire 53 and RF Export the combination capacitor coupling of the vertical component of bonding wire 51.

In the RF switch of standard, each of these three signal coupling sources are individually minimized, are opened to minimize RF The total coupling closed.It is a kind of reduce RF input bonding wire 53 and RF output bonding wire 51 between coupling method be maximize bonding wire 53 with Spacing between 51.However, the technology is limited to the size of packaging part 10, weld pad (not shown) and IC chip 20.For example, due to The overall size of RF switch reduces, and the maximum distance that RF input bonding wire 53 and RF output bonding wire 51 can be spaced cannot sufficiently limit weldering Coupling between line 55 and 51 is to obtain desired isolation bandwidth.In addition, being opened by the size or reduction for changing IC chip 20 Effective off-state capacitance on powered-down road can reduce IC chip coupling, and still, this can have other performance parameters that RF is switched There is negative effect, such as insertion loss and power use, so as to cause between the RF input port and RF output port of packaging part Limited isolation.It can also be solved by changing used encapsulation technology (for example, by using Flip-Chip Using) The isolation effect of RF switch, still, these changes had not only increased switch cost, but also increased complexity.

The method that another kind is used to minimize signal coupling is shown in Fig. 4.Fig. 4 is one illustrated according to embodiment Kind changes the figure of the method coupled between bonding wire.In this embodiment, closely have by that will be grounded bonding wire 55 and be placed against One of bonding wire 51 of exit or 53 reduces the coupling between bonding wire 51 and 53.In one embodiment, exit is 50 ohm of exit.In the embodiment shown in fig. 4, ground joint 55 is placed close to RF output bonding wire 51.Herein, it inputs To RF input bonding wire 53 electric current in ground joint 55 inducing current, this successively induces reversed electricity in RF output bonding wire 51 Stream, to counteract the coupling between RF input bonding wire 53 and RF output bonding wire 51.

Referring back to Fig. 3, in some embodiments, configuration or the geometry of bonding wire 51 and 53 are selected, so that bonding wire The inductive coupling generated in 51 and 53 offsets the capacitive coupling generated in IC chip 20.It therefore, is not to minimize each coupling source, But the geometry by changing bonding wire 51 and 53 manipulates the coupling from bonding wire 51 and 53 so that its substantially with due to IC chip 20 and introduce coupling out-phase.Particularly, in the concern frequency band of RF switch, due to the coupling of the introducing of bonding wire 51 and 53 It is selected as the coupling basic out-phase introduced with IC chip 20 and there is similar magnitude.According to RF switch design requirement, The phase and magnitude that bonding wire can be selected to couple are to introduce recess in the isolation curve of switch in desired frequency band.Passing through will Recess is introduced into isolation curve, can improve isolation bandwidth relative to traditional partition method.

The phase and magnitude that couple between bonding wire 51 and 53 are the functions of bonding wire geometry.Therefore, by adjusting for example Angle, length and/or the orientation of bonding wire 51 and 53, these parameters that the signal between bonding wire 51 and 53 can be selected to couple.So And described technology is not limited to adjust above-mentioned geometry characteristic.The design factor of the coupling of any influence bonding wire 51 and 53 The phase and magnitude of the coupling in bonding wire 5 can be used to adjust.For example, as shown in figure 4, ground joint 55 can be placed on bonding wire Near one in 51 and 53.In this implementation, due to the electric current induced in ground joint 55, bonding wire 51 can be reduced And the magnitude of the coupling between 53.Furthermore it is possible to adjust the design factor of the coupling of the introducing of any influence IC chip 20 to offset It is coupled with the resultant signal of bonding wire 51 and 53.Therefore, the phase of the coupling of any influence RF bonding wire 51 and 53 and/or IC chip 20 and The design factor of amplitude is considered falling in the range of described technology.

Fig. 5 is to illustrate the figure that bonding wire is exported according to the various RF of embodiment.Fig. 5 shows IC chip 20, RF input The top view of lead 33 and RF output lead 31 and RF input bonding wire 53 and RF output bonding wire 51.Bonding wire is exported by changing RF 51 angle, to adjust the angle between RF input bonding wire 53 and RF output bonding wire 51 to form various states (state 1 to state 5).In state 1, RF exports bonding wire 51 and forms 180 ° of angles about RF input bonding wire 51.In state 5, RF inputs bonding wire 53 and RF Export 51 shape of bonding wire at an angle of 90.Similarly, in state 2,3 and 4, RF input bonding wire 53 and RF output bonding wire 51 are respectively formed About 157.5 °, 135 ° and 112.5 ° of angle.

Fig. 6 is the curve graph for illustrating the isolation of RF bonding wire configuration of Fig. 5.Curve shown in fig. 6 shows multiple The isolation in terms of dB of RF switch, wherein adjusting the angle of RF output bonding wire 5 between state 1 and state 5 as shown in Figure 5 Degree.

As shown in state 1 to the drawing of state 5, the recess in isolation curve is based on RF output bonding wire 51 and RF is inputted Bonding wire 53 formed angle and change.With RF output bonding wire 53 close to the vertical orientation relative to RF input bonding wire 51, RF weldering Increase (that is, in the region 1-2GHz) in low frequency region is coupled between line 53 and 51.As shown in the drawing of state 3, Bonding wire coupling couples out-phase with IC chip and on bonding wire and the similar point of magnitude of IC chip coupling, in isolation to frequency performance In form recess.Recess in each of state 4 and state 5 is formed under high frequency.Therefore, such as the isolation curve of Fig. 6 Shown in, while frequency isolation degree degrades in low frequency region, by make the isolation out-phase from Liang Ge mechanism from And in isolation to isolation recess is introduced in frequency performance, broad frequency band isolation can be obtained.

Each indent in the isolation curve of Fig. 6 reduces the overall electricity in IC package compared with side frequency Coupling.Therefore, the term used in the disclosure, which is reduced, can refer to that IC package is relative to neighbouring for selected frequency band The reduction of the frequency of selected frequency band being electrically coupled.According at least one embodiment, since difference is electrically coupled the counteracting between source, Produce the reduction being electrically coupled, such as isolation recess.When different coupling sources is mutually out of phase, to Mr. Yu's frequency range, will subtract The overall coupling of few IC package.

According at least one embodiment, the geometry of bonding wire 53 and 51 is selected to increase the isolation bandwidth of RF switch. This shows as the isolation recess in bandwidth.Multipole RF switch encapsulation in, effect can show as in desired bandwidth it is multiple every From recess.

Fig. 7 is the figure of the bonding wire connection between the IC chip and QFN package substrate shown according to embodiment.Specifically, The embodiment of Fig. 7 includes QFN encapsulation 11, with IC chip 21.IC chip 21 includes multiple leads 30, and multiple leads 30 wrap Include multiple RF input leads 32,34 and multiple RF output leads 31,32 and 36.QFN encapsulation further includes multiple leads 40, It is electrically connected with the lead 30 of IC chip 21.Specifically, RF input lead 33,24 and 38 respectively via bonding wire 53,54 and 58 with QFN package lead 43,44 and 48 connects, and RF output lead 31,32 and 36 draws via bonding wire 51,52 and 56 and QFN encapsulation respectively Line 41,42 and 46 connects.

In the embodiment shown in the drawing, multiple RF that IC chip 21 will likely undergo electric signal to couple output and input lead 31 to 38 connections.Particularly, each of bonding wire 51 to 58 may each comprise due to caused by the RF signal for being applied to it It is coupled with the electric signal of other bonding wires 51 to 58.In addition, as is described in connection with fig. 3, due to the geometry of bonding wire 51 to 58, Such as vertical component effect and horizontal part due to bonding wire 51 and 58, bonding wire 51 to 58 can undergo inductive coupling and capacitive coupling, and meeting It is further subjected to the capacitive coupling generated in IC chip 21.

In some embodiments, the geometry and positioning for selecting each of bonding wire 51 to 58, so that welding The inductive coupling and capacitive coupling generated in line 51 to 58 offsets the capacity coupled at least part generated in IC chip 21. Since each of bonding wire 51 to 58 can carry out inductive coupling or capacitive coupling with each of other bonding wires 51 to 58, So selected geometry can position based on other bonding wires 51 to 58 and geometry.In addition, by based at butt welding The expection working band of line 51 to 58 selects each pair of bonding wire 51 to 58 to change geometry and the positioning of bonding wire 51 to 58 Recess in isolation curve.

Equipment using the above scheme can be realized in various electronic equipments.The embodiment of electronic equipment may include but It is not limited to consumption electronic product, the part of consumption electronic product, electronic test equipment etc..The embodiment of electronic product may include But it is not limited to Medical Devices, mobile phone, phone, tablet computing device, television set, computer monitor and control unit, computer, hand-held Computer, personal digital assistant (PDA), microwave, refrigerator, automobile, stereo system, cassette recorder or player, DVD are broadcast Put device, CD Player, VCR, MP3 player, radio, camcorders, video camera, digital camera, cleaning machine, drying Machine, cleaning machine/drying machine, duplicator, facsimile machine, scanner, multi-function peripheral, wrist handle, clock etc..In addition, electric Sub- equipment may include non-finished product.

Although disclosing the present invention, those skilled in the art under the background of certain preferred embodiments and embodiment It should be understood that the present invention be more than specific embodiments disclosed and extend to other alternate embodiments of the invention and/or Purposes and its it is significantly improved example and equivalent arrangements.In addition, though having displayed the details of and having described multiple modifications of the invention Example, but it is based on present disclosure, the other improvements example being within the scope of the present invention will be to those skilled in the art Obviously.It is also contemplated that the specific features of embodiment and the various combinations of scheme or sub-portfolio can make and Still it is within the scope of the present invention.It should be understood that the various features and scheme of disclosed embodiment can be combined with each other or Person's substitution is to form the different mode of invention disclosed.Therefore, the range of present invention disclosed herein is not intended to by institute above Disclosed specific embodiment limitation, but should only be determined by clearly understanding appended claims.

Claims

Integrated circuit 1. (IC) encapsulating structure, comprising:

IC chip comprising multiple first leads；

Package substrate comprising multiple second leads, the IC chip are located on the package substrate；

The first lead is connect by multiple bonding wires with second lead respectively,

Wherein in response to being applied to radio frequency (RF) signal of the IC package, pass through the collection between the multiple first lead Occur first at circuit chip to be electrically coupled,

Wherein the bonding wire has and is electrically coupled in response to the second of the RF signal, and

Described first is wherein adjusted to be electrically coupled or second is electrically coupled so that described second being electrically coupled and described the in selected frequency band One is electrically coupled basic matching, and the overall thermocouple of the integrated antenna package is reduced hence for the RF signal in the selected frequency band It closes,

Wherein by the way that ground joint is placed in one of bonding wire nearby to induce reverse current in bonding wire or by changing bonding wire Geometry is electrically coupled to adjust second.
2. IC package structure as described in claim 1, wherein the IC chip includes first surface and second surface, wherein institute Stating bonding wire includes RF input bonding wire and RF output bonding wire, and what RF input bonding wire was attached to the first lead is located at the IC RF input lead on the first surface of chip, what RF output bonding wire was attached to the first lead is located at the IC RF output lead on the second surface of chip.
3. IC package structure as claimed in claim 2, wherein RF input bonding wire and RF output bonding wire are attached to institute IC chip is stated to be positioned to maximum distance apart.
4. IC package structure as claimed in claim 2, wherein described in each bonding wire limits from the IC chip Vertical component effect that first lead is extended and from the outwardly extending horizontal part of the first lead in the IC chip, and its In, the bonding wire navigates on predetermined orientation to which the component being electrically coupled between the horizontal bonding wire reduces the selected frequency Totality with the interior integrated circuit is electrically coupled.
5. IC package structure as claimed in claim 4, wherein the first of the integrated antenna package is electrically coupled including occurring Capacitive coupling component and generation between RF input lead in the IC chip and RF output lead input bonding wire in the RF Horizontal part and RF output bonding wire horizontal part between inductive coupling component, wherein the level point of RF input bonding wire Amount and the horizontal component of RF output bonding wire carry out angular adjustment relative to each other, so that inputting bonding wire and RF in the RF Export the inductive coupling component and the capacitive coupling component out-phase between bonding wire and IC chip.
6. IC package structure as claimed in claim 5, wherein adjusting the horizontal part of the RF input bonding wire and RF output bonding wire Relative angle orientation to due to the capacitive coupling in bondwire inductance coupled component and the IC chip in the selected frequency band Component out-phase and on isolation curve limit isolation recess.
7. IC package structure as claimed in claim 2 exports wherein RF output bonding wire is positioned proximate to the neighbouring RF The ground connection bonding wire of bonding wire, there is 50 ohm of exit between them, to reduce the RF input bonding wire and RF output Inductive coupling between bonding wire, the RF output bonding wire is relative to RF input bonding wire orientation to reduce the IC package Totally it is electrically coupled.
Radio frequency 8. (RF) switch capsulation structure, comprising:

Package substrate；And

Integrated circuit (IC) chip comprising RF switch, the IC chip dispose on the package substrate,

Wherein IC chip inputs bonding wire and RF output bonding wire via RF and is electrically connected with the package substrate,

Wherein when RF signal is applied to the RF switch package, is inputted between bonding wire and RF output bonding wire in the RF and form the One is electrically coupled, and forms second in the IC chip and is electrically coupled, and

Wherein adjust described first be electrically coupled or second be electrically coupled so that described first be electrically coupled offset scheduled frequency range in institute State IC chip described second is electrically coupled at least partly,

Wherein by the way that ground joint is placed in one of bonding wire nearby to induce reverse current in bonding wire or by changing bonding wire Geometry is electrically coupled to adjust second.
9. RF switch capsulation structure as claimed in claim 8, wherein RF input bonding wire and RF output bonding wire attachment To be positioned to maximum distance apart on to the IC chip.
10. RF switch capsulation structure as claimed in claim 8, wherein each bonding wire defines and prolongs from the IC chip The vertical component effect of stretching and from the outwardly extending horizontal part of the IC chip, and wherein the bonding wire navigate to predetermined orientation so that The component that is electrically coupled between horizontal bonding wire reduces the totality of the integrated circuit in the scheduled frequency range and is electrically coupled.
11. RF switch capsulation structure as claimed in claim 10, wherein described first is electrically coupled including occurring in the IC core Capacitive coupling component and generation between the RF input bonding wire and RF output bonding wire of on piece is in RF input bonding wire Inductive coupling component between horizontal part and the horizontal part of RF output bonding wire, wherein the horizontal component of RF input bonding wire and institute The horizontal component for stating RF output bonding wire carries out angular adjustment relative to each other, so as to input bonding wire and RF output bonding wire in the RF The inductive coupling component and capacitive coupling component out-phase between the IC chip.
12. RF switch capsulation structure as claimed in claim 11, wherein adjust the RF input bonding wire the horizontal part and RF export bonding wire the horizontal part relative angle orientation, thus due in scheduled frequency range bondwire inductance coupled component with The capacitive coupling component out-phase in the IC chip and isolation recess is limited on isolation curve.
13. RF switch capsulation structure as claimed in claim 8, wherein RF output bonding wire is positioned proximate to the neighbouring RF The ground connection bonding wire of bonding wire is exported, to reduce the inductive coupling between the RF input bonding wire and RF output bonding wire, the RF is defeated Bonding wire is relative to RF input bonding wire orientation out, so that the totality for reducing the IC package is electrically coupled.
Integrated circuit 14. (IC) encapsulating structure, comprising:

IC chip comprising multiple first input leads and multiple first output leads, first input lead respectively correspond In first output lead；

Package substrate comprising multiple second input leads and multiple second output leads, the IC chip are located in the envelope It fills on substrate；

Multiple bonding wires, are separately connected: i) first input lead and second input lead and ii) described first Output lead and second output lead,

Wherein each corresponding first output and input lead to being configured as transmitting radio frequency (RF) signal between them,

Wherein the bonding wire is arranged to be electrically coupled due to caused by the transmission of the RF signal and selecting for each RF signal Frequency band limits isolation recess on isolation curve, and

The correspondence RF signal that input lead is wherein corresponded in response to being applied to RF, in each of the IC chip corresponding first Occur first to be electrically coupled between input lead and the first output lead, wherein in response to corresponding RF signal, with it is each corresponding The first input lead and the connection of the first output lead bonding wire between occur second to be electrically coupled, and wherein, adjust described the One is electrically coupled or second is electrically coupled makes each described first to be electrically coupled to offset corresponding second at least part for being electrically coupled,

Wherein by the way that ground joint is placed in one of bonding wire nearby to induce reverse current in bonding wire or by changing bonding wire Geometry is electrically coupled to adjust second.
15. IC package structure as claimed in claim 14, wherein each bonding wire is limited from pair in the IC chip Answer vertical component effect that lead extends and from the outwardly extending horizontal part of correspondence lead in the IC chip, and wherein, institute It states bonding wire to navigate on predetermined orientation, so that the component that is electrically coupled between horizontal bonding wire reduces described in the selected frequency band integrate The totality of circuit is electrically coupled.
16. IC package structure as claimed in claim 14, wherein the first of the IC chip is electrically coupled including occurring described Corresponding first input lead in IC chip and the capacitive coupling component between the first output lead and generation are in bonding wire Inductive coupling component between horizontal part, wherein the horizontal component of the bonding wire carries out angular adjustment relative to each other, so that The inductive coupling component and capacitive coupling component between the first input bonding wire and the first output bonding wire and the IC chip Out-phase.
17. IC package structure as claimed in claim 16, wherein the relative angle orientation of the horizontal part of the bonding wire is adjusted, thus It is being isolated due to bondwire inductance coupled component and the capacitive coupling component out-phase in the IC chip in selected frequency band It writes music and limits isolation recess on line.