CN105490525A - Modular multilevel converter module circuit capable of eliminating DC fault - Google Patents
Modular multilevel converter module circuit capable of eliminating DC fault Download PDFInfo
- Publication number
- CN105490525A CN105490525A CN201511017506.4A CN201511017506A CN105490525A CN 105490525 A CN105490525 A CN 105490525A CN 201511017506 A CN201511017506 A CN 201511017506A CN 105490525 A CN105490525 A CN 105490525A
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- semiconductor switch
- sustained diode
- diode
- emitter
- controllable silicon
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
- H02M1/348—Passive dissipative snubbers
Abstract
The invention relates to a modular multilevel converter module circuit capable of eliminating a DC fault, belonging to the field of an electrical automation device. The modular multilevel converter module circuit comprises a first DC capacitor, a second DC capacitor, a first semiconductor switch, a second semiconductor switch, a third semiconductor switch, a fourth semiconductor switch, a fifth semiconductor switch, a first protective silicon controlled rectifier, a second protective silicon controlled rectifier, a third protective silicon controlled rectifier, a first flywheel diode, a second flywheel diode, a third flywheel diode, a fourth flywheel diode, a fifth flywheel diode, a sixth flywheel diode, a resistance-capacitance absorption circuit, an equalizing resistor, a first charging diode, a second charging diode, a first current limiting resistor and a second current limiting resistor. With the modular multilevel converter module circuit capable of eliminating the DC fault, the DC short-circuit current can be eliminated by using the silicon controlled rectifiers with relatively low cost, and the total cost and the running loss of a converter are reduced; and the modular multilevel converter module circuit capable of eliminating the DC fault, provided by the invention, can be applied to voltage source converter based high voltage direct current (VSC-HVDC), a static synchronous compensator (STATCOM) and the like.
Description
Technical field
The present invention relates to a kind of modular multilevel unsteady flow modular circuit removed with DC Line Fault, belong to field of electric automatization equipment.
Background technology
Modular multilevel voltage source converter, when realizing overhead wire direct current transportation, need solve the protection problem of dc-side short-circuit.Method conventional at present has: 1) pipe inverse parallel controllable silicon under modular multilevel power model (MMC power model) brachium pontis, utilizes this controllable silicon to bear large short circuit current, and wait for AC switch trip; 2) the protection IGBT in clamper Shuangzi module (CDSM) is adopted to realize the quick shutoff of direct-current short circuit electric current.The shortcoming of CDSM is: 1) protect IGBT and corresponding clamp diode electric current and voltage capacity identical with main power device, cost is high; 2) protect IGBT and fly-wheel diode rotation work thereof in conducting state, because its forward voltage drop is large, conduction loss is large.Therefore, need a kind of cost lower and the band DC Line Fault that running wastage is less remove modular multilevel unsteady flow modular circuit.
Summary of the invention
The object of the invention is to propose a kind of modular multilevel unsteady flow modular circuit removed with DC Line Fault, to overcome the deficiency of prior art, the silicon-controlled device that use cost is lower realizes the removing of direct-current short circuit electric current, reduces current transformer holistic cost and reduces running wastage.
The modular multilevel unsteady flow modular circuit that the band DC Line Fault that the present invention proposes is removed, comprise the first direct current capacitor C1, second direct current capacitor C2, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, 4th semiconductor switch S4, 5th semiconductor switch S5, first protection controllable silicon S6, second protection controllable silicon S7, 3rd protection controllable silicon S8, first sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4, 5th sustained diode 5, 6th sustained diode 6, resistance capaciting absorpting circuit CS/RS, grading resistor RJ, first charging diode D9, second charging diode D10, first current-limiting resistance RL1 and the second current-limiting resistance RL2,
The first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the negative electrode of the 5th sustained diode 5, the first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the emitter of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the anode of the 5th sustained diode 5, the anode of the first described protection controllable silicon S6 is connected with the negative electrode of the 6th described sustained diode 6, the negative electrode of the first described protection controllable silicon S6 is connected with the anode of the 6th described sustained diode 6, as the positive terminal of the modular multilevel unsteady flow modular circuit being with DC Line Fault to remove after the emitter of the first described semiconductor switch S1 is connected with the collector electrode of the second semiconductor switch S2, as the negative pole end of the modular multilevel unsteady flow modular circuit being with DC Line Fault to remove after the emitter of the 3rd described semiconductor switch S3 is connected with the collector electrode of the 4th described semiconductor switch S4, the positive terminal of the first described direct current capacitor C1 is connected with the collector electrode of the first described semiconductor switch S1, and the negative pole end of the first direct current capacitor C1 protects the negative electrode of controllable silicon S6 to be connected with the emitter of the second semiconductor switch S2, the emitter and first of the 5th semiconductor switch S5 simultaneously, the positive terminal of the second described direct current capacitor C2 protects the anode of controllable silicon S6 to be connected with the collector electrode and first of the collector electrode of the 3rd semiconductor switch S3, the 5th semiconductor switch S5, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4, described resistance capaciting absorpting circuit CS/RS and described grading resistor RJ is parallel to the collector and emitter of the 5th semiconductor switch S5 respectively, the anode of the first described charging diode D9 is connected to one end of the first current-limiting resistance RL1, the other end of the first current-limiting resistance RL1 is connected to the collector electrode of the 5th semiconductor switch S5, and the negative electrode of the first charging diode D9 is connected to the collector electrode of the first semiconductor switch S1, the negative electrode of the second described charging diode D10 is connected to the emitter of the 5th described semiconductor switch S5, the anode of the second charging diode D10 is connected to one end of the second current-limiting resistance RL2, and the other end of the second described current-limiting resistance RL2 is connected to the emitter of the 4th described semiconductor switch S4, the negative electrode of the second described protection controllable silicon S7 is connected with the collector electrode of the second described semiconductor switch S2, and the anode of the second protection controllable silicon S7 is connected with the emitter of the second semiconductor switch S2, the negative electrode of the 3rd described protection controllable silicon S8 is connected with the collector electrode of the 3rd described semiconductor switch S3, and the anode of the 3rd protection controllable silicon S8 is connected with the emitter of the 3rd semiconductor switch S3.
The modular multilevel unsteady flow modular circuit that the band DC Line Fault that the present invention proposes is removed, its advantage is: the lower silicon-controlled device of use cost, to realize the removing of direct-current short circuit electric current, reduces current transformer holistic cost and also reduces running wastage.The modular multilevel unsteady flow modular circuit removed based on band DC Line Fault of the present invention can be applied to flexible DC power transmission (VSC-HVDC), STATCOM (STATCOM), etc.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of the modular multilevel unsteady flow modular circuit that band DC Line Fault of the present invention is removed.
Embodiment
The modular multilevel unsteady flow modular circuit that the band DC Line Fault that the present invention proposes is removed, comprise the first direct current capacitor C1, second direct current capacitor C2, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, 4th semiconductor switch S4, 5th semiconductor switch S5, first protection controllable silicon S6, second protection controllable silicon S7, 3rd protection controllable silicon S8, first sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4, 5th sustained diode 5, 6th sustained diode 6, resistance capaciting absorpting circuit CS/RS, grading resistor RJ, first charging diode D9, second charging diode D10, first current-limiting resistance RL1 and the second current-limiting resistance RL2,
The first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the negative electrode of the 5th sustained diode 5, the first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the emitter of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the anode of the 5th sustained diode 5, the anode of the first described protection controllable silicon S6 is connected with the negative electrode of the 6th described sustained diode 6, the negative electrode of the first described protection controllable silicon S6 is connected with the anode of the 6th described sustained diode 6, as the positive terminal of the modular multilevel unsteady flow modular circuit being with DC Line Fault to remove after the emitter of the first described semiconductor switch S1 is connected with the collector electrode of the second semiconductor switch S2, as the negative pole end of the modular multilevel unsteady flow modular circuit being with DC Line Fault to remove after the emitter of the 3rd described semiconductor switch S3 is connected with the collector electrode of the 4th described semiconductor switch S4, the positive terminal of the first described direct current capacitor C1 is connected with the collector electrode of the first described semiconductor switch S1, and the negative pole end of the first direct current capacitor C1 protects the negative electrode of controllable silicon S6 to be connected with the emitter of the second semiconductor switch S2, the emitter and first of the 5th semiconductor switch S5 simultaneously, the positive terminal of the second described direct current capacitor C2 protects the anode of controllable silicon S6 to be connected with the collector electrode and first of the collector electrode of the 3rd semiconductor switch S3, the 5th semiconductor switch S5, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4, described resistance capaciting absorpting circuit CS/RS and described grading resistor RJ is parallel to the collector and emitter of the 5th semiconductor switch S5 respectively, the anode of the first described charging diode D9 is connected to one end of the first current-limiting resistance RL1, the other end of the first current-limiting resistance RL1 is connected to the collector electrode of the 5th semiconductor switch S5, and the negative electrode of the first charging diode D9 is connected to the collector electrode of the first semiconductor switch S1, the negative electrode of the second described charging diode D10 is connected to the emitter of the 5th described semiconductor switch S5, the anode of the second charging diode D10 is connected to one end of the second current-limiting resistance RL2, and the other end of the second described current-limiting resistance RL2 is connected to the emitter of the 4th described semiconductor switch S4, the negative electrode of the second described protection controllable silicon S7 is connected with the collector electrode of the second described semiconductor switch S2, and the anode of the second protection controllable silicon S7 is connected with the emitter of the second semiconductor switch S2, the negative electrode of the 3rd described protection controllable silicon S8 is connected with the collector electrode of the 3rd described semiconductor switch S3, and the anode of the 3rd protection controllable silicon S8 is connected with the emitter of the 3rd semiconductor switch S3.
Figure 1 shows that the circuit theory diagrams of the modular multilevel unsteady flow modular circuit that the band DC Line Fault that the present invention proposes is removed.In Fig. 1, unsteady flow modular circuit comprises the first and second direct current capacitor C1/C2, the first and second semiconductor switch S1/S2, the third and fourth semiconductor switch S3/S4, the 5th semiconductor switch S5, the first protection controllable silicon S6, the second protection controllable silicon S7, the 3rd protection controllable silicon S8, the first and second sustained diode 1/D2, the third and fourth sustained diode 3/D4, the 5th and the 6th sustained diode 5/D6, resistance capaciting absorpting circuit CS/RS, grading resistor RJ, the first and second charging diode D9/D10, the first and second current resistor RL1/RL2.S1/S2/S3/S4/S5/S6 forms inverse parallel with D1/D2/D3/D4/D5/D6 respectively and is connected.The emitter of S1 is connected as the positive terminal of unsteady flow modular circuit with the collector electrode of S2, and the emitter of S3 is connected as the negative pole end of unsteady flow modular circuit with S4 collector electrode; The positive terminal of C1 is connected with the collector electrode of S1, and the negative pole end of C1 is connected with the emitter of the emitter of S2, S5 and the negative electrode of S6; The positive terminal of C2 is connected with the collector electrode of the collector electrode of S3, S5 and the anode of S6; The negative pole end of C2 is connected with the emitter of S4; Electric capacity CS and resistance RS is connected in parallel on the collector and emitter of S5 again after connecting; Grading resistor RJ is connected in parallel on the collector and emitter of S5.The anode of D9 is connected to one end of RL1, and the other end of RL1 is connected to the collector electrode of S5, and D9 negative electrode is connected to the collector electrode of S1; The negative electrode of D10 is connected to the emitter of S5, the anode of D10 is connected to one end of RL2, the other end of RL2 is connected to the emitter of S4, the negative electrode of S7 is connected with the collector electrode of S2, the anode of S7 is connected with the emitter of S2, the negative electrode of S8 is connected with the collector electrode of S3, and the anode of S8 is connected with the emitter of S3.
The modular multilevel unsteady flow modular circuit that band DC Line Fault of the present invention is removed, is powering on the charging initial stage, S5, S6, S7, S8 not conductings.When DC capacitor C1, C2 Voltage Establishment is to after making module control circuit work, S5, S6 are applied in gate pole Continuity signal, make C1, C2 continue charging process until charging terminates by S5/S6 and D5/D6.When device normally works; S7, S8 locking pulse; and gate pole conducting drive singal is applied to the 5th semiconductor switch S5 and protection controllable silicon S6 always; make S5 and S6 be in conducting state always; because S6 and D6 conduction voltage drop is less than S5 and D5 respectively, therefore S6 and D6 is flow through in normal operating current rotation.When detecting current transformer dc-side short-circuit fault; first semiconductor switch S1, the second semiconductor switch S2 of unsteady flow modular device, the 3rd semiconductor switch S3, the 4th semiconductor switch S4, the 5th semiconductor switch S5 and first protection controllable silicon S6 latch actuation pulse immediately; controllable silicon S7, S8 is protected then to be applied in driving pulse; wherein S5 can turn off immediately under no current state, and S6 is turning off because of electric current cutout naturally through all after dates of maximum half alternating current.S7, S8 are sustained diode 2, D3 shares short circuit current.Because S6, S7, S8 are silicon-controlled devices, the short circuit current in half alternating current cycle can be born.Thus the semiconductor switch of available protecting unsteady flow modular circuit and fly-wheel diode.D9, D10, RL1, RL2 provide rectification charging loop in unsteady flow module start-up course, make C1, C2 to obtain equalizing charge.CS/RS and RJ makes S6 can keep all pressing with the S6 in the module of other series connection upon opening.S5/D5 also can omit in some cases need not, RL1, RL2 can when there being external charging current-limiting resistance.
The first semiconductor switch S1 in circuit of the present invention, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4, the 5th semiconductor switch S5, can use any turn-off semiconductor switch.
Circuit of the present invention is when realizing actual physics device, two power models can be split into realize, be placed in a power module architectures part by S1/D1, S2/D2, C1, S6/D6, RL1/D9, CS/RS and RJ, and other parts are placed in another power module architectures part, connected together by two electric connecting points between two power models.
The core of circuit of the present invention utilizes protection controllable silicon S6 often after the short circuit current of half period, all can have a cutout time after dc-side short-circuit thus the feature that disconnects of nature can realize the removing of direct-current short circuit electric current, and utilize S7, S8 to share short circuit current for D2, D3.Any equivalent transformation circuit done based on circuit of the present invention, all belongs to protection scope of the present invention.
Claims (1)
1. the modular multilevel unsteady flow modular circuit removed with DC Line Fault, it is characterized in that this modular multilevel unsteady flow modular circuit comprises the first direct current capacitor C1, second direct current capacitor C2, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, 4th semiconductor switch S4, 5th semiconductor switch S5, first protection controllable silicon S6, second protection controllable silicon S7, 3rd protection controllable silicon S8, first sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4, 5th sustained diode 5, 6th sustained diode 6, resistance capaciting absorpting circuit CS/RS, grading resistor RJ, first charging diode D9, second charging diode D10, first current-limiting resistance RL1 and the second current-limiting resistance RL2,
The first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the negative electrode of the 5th sustained diode 5, the first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the emitter of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the anode of the 5th sustained diode 5, the anode of the first described protection controllable silicon S6 is connected with the negative electrode of the 6th described sustained diode 6, the negative electrode of the first described protection controllable silicon S6 is connected with the anode of the 6th described sustained diode 6, as the positive terminal of the modular multilevel unsteady flow modular circuit being with DC Line Fault to remove after the emitter of the first described semiconductor switch S1 is connected with the collector electrode of the second semiconductor switch S2, as the negative pole end of the modular multilevel unsteady flow modular circuit being with DC Line Fault to remove after the emitter of the 3rd described semiconductor switch S3 is connected with the collector electrode of the 4th described semiconductor switch S4, the positive terminal of the first described direct current capacitor C1 is connected with the collector electrode of the first described semiconductor switch S1, and the negative pole end of the first direct current capacitor C1 protects the negative electrode of controllable silicon S6 to be connected with the emitter of the second semiconductor switch S2, the emitter and first of the 5th semiconductor switch S5 simultaneously, the positive terminal of the second described direct current capacitor C2 protects the anode of controllable silicon S6 to be connected with the collector electrode and first of the collector electrode of the 3rd semiconductor switch S3, the 5th semiconductor switch S5, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4, described resistance capaciting absorpting circuit CS/RS and described grading resistor RJ is parallel to the collector and emitter of the 5th semiconductor switch S5 respectively, the anode of the first described charging diode D9 is connected to one end of the first current-limiting resistance RL1, the other end of the first current-limiting resistance RL1 is connected to the collector electrode of the 5th semiconductor switch S5, and the negative electrode of the first charging diode D9 is connected to the collector electrode of the first semiconductor switch S1, the negative electrode of the second described charging diode D10 is connected to the emitter of the 5th described semiconductor switch S5, the anode of the second charging diode D10 is connected to one end of the second current-limiting resistance RL2, and the other end of the second described current-limiting resistance RL2 is connected to the emitter of the 4th described semiconductor switch S4, the negative electrode of the second described protection controllable silicon S7 is connected with the collector electrode of the second described semiconductor switch S2, and the anode of the second protection controllable silicon S7 is connected with the emitter of the second semiconductor switch S2, the negative electrode of the 3rd described protection controllable silicon S8 is connected with the collector electrode of the 3rd described semiconductor switch S3, and the anode of the 3rd protection controllable silicon S8 is connected with the emitter of the 3rd semiconductor switch S3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511017506.4A CN105490525A (en) | 2015-12-29 | 2015-12-29 | Modular multilevel converter module circuit capable of eliminating DC fault |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511017506.4A CN105490525A (en) | 2015-12-29 | 2015-12-29 | Modular multilevel converter module circuit capable of eliminating DC fault |
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| CN105490525A true CN105490525A (en) | 2016-04-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201511017506.4A Pending CN105490525A (en) | 2015-12-29 | 2015-12-29 | Modular multilevel converter module circuit capable of eliminating DC fault |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505887A (en) * | 2016-12-30 | 2017-03-15 | 海南金盘电气有限公司 | A kind of DC power-supply system |
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| CN205265525U (en) * | 2015-12-29 | 2016-05-25 | 北京四方继保自动化股份有限公司 | Take many level of modularization converter module circuit of direct current fault clearance |
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2015
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Patent Citations (3)
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| CN102403886A (en) * | 2011-11-03 | 2012-04-04 | 南方电网科学研究院有限责任公司 | Method for protecting direct current line transient short-circuit fault of modular multiple-level converter |
| CN204835976U (en) * | 2015-07-22 | 2015-12-02 | 清华大学 | Take three many level of level modularization converter module circuit of short -circuit protection |
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