CN105429496A - Modular multilevel converter with DC fault elimination function - Google Patents
Modular multilevel converter with DC fault elimination function Download PDFInfo
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- CN105429496A CN105429496A CN201511028577.4A CN201511028577A CN105429496A CN 105429496 A CN105429496 A CN 105429496A CN 201511028577 A CN201511028577 A CN 201511028577A CN 105429496 A CN105429496 A CN 105429496A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/325—Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters
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- Power Engineering (AREA)
- Rectifiers (AREA)
Abstract
The invention relates to a modular multilevel converter with a DC fault elimination function, wherein the modular multilevel converter belongs to the field of electrical automatic equipment. The modular multilevel converter comprises upper converter arms, lower converter arms and two sets of filter reactors, wherein each set of filter reactors comprises three filter reactors. Three anode ends of the three upper converter arms are connected together and are used as a DC anode end of the converter, and three cathode ends of the three upper converter arms are connected with one end of a first set of filter reactors. The other end of the first set of filter reactors is used as a three-phase AC phase line end of the converter. Three cathode ends of the three lower converter arms are connected together and are used as a DC cathode end of the converter, and three anode ends of the three lower converter arms are connected with one end of the second set of filter reactors. The other end of the second set of filter reactors is connected with the three-phase AC phase line end of the converter. The modular multilevel converter with the DC fault elimination function has advantages of quickly eliminating DC shortcircuit current, reducing integral cost of the converter and reducing operation loss.
Description
Technical field
The present invention relates to a kind of modularization multi-level converter with DC fault clearance function, belong to field of electric automatization equipment.
Background technology
Modular multilevel voltage source converter, when realizing overhead wire direct current transportation, need solve the protection problem of dc-side short-circuit.Method conventional at present has: 1) pipe inverse parallel controllable silicon under modular multilevel power model (MMC power model) brachium pontis, utilizes this controllable silicon to bear large short circuit current, and wait for AC switch trip; 2) the protection IGBT in clamper Shuangzi module (CDSM) is adopted to realize the quick shutoff of direct-current short circuit electric current.The shortcoming of CDSM is: 1) protect IGBT and corresponding clamp diode electric current and voltage capacity identical with main power device, cost is high; 2) protect IGBT and fly-wheel diode rotation work thereof in conducting state, because its forward voltage drop is large, conduction loss is large.Therefore, need a kind of cost lower and the band DC Line Fault that running wastage is less remove modularization multi-level converter.
Summary of the invention
The object of the invention is to propose a kind of modularization multi-level converter removing function with DC Line Fault; to overcome the deficiency of prior art; use protection IGBT to realize the removing of direct-current short circuit electric current in conjunction with lower-cost silicon-controlled device, reduce current transformer holistic cost and reduce running wastage.
The band DC Line Fault that the present invention proposes removes the modularization multi-level converter of function, comprises converter arm, first group of three filter reactor and second group of three filter reactor under converter arm on three platforms, three platforms; On three described platforms three positive terminals of converter arm connect together rear as described in band DC Line Fault remove the direct-flow positive pole end of modularization multi-level converter of function, on three platforms, three negative pole ends of converter arm are connected respectively to one end of first group of three filter reactor, and the other end of first group of three filter reactor removes the three-phase alternating current phase line end of the modularization multi-level converter of function respectively as described band DC Line Fault; Under three platforms three negative pole ends of converter arm connect together rear as described in band DC Line Fault remove the direct current negative pole end of modularization multi-level converter of function, under three platforms, three positive terminals of converter arm are connected respectively to one end of second group of three filter reactor, and the other end of second group of three filter reactor is connected respectively to the three-phase alternating current phase line end that described band DC Line Fault removes the modularization multi-level converter of function.
Above-mentioned band DC Line Fault is removed in the modularization multi-level converter of function, and described upper converter arm, comprises multiple A type power model, and multiple A type power model adopts and is connected in series formation positive terminal and a negative pole end; Described lower converter arm, comprises multiple Type B power model, and multiple Type B power model adopts and is connected in series formation positive terminal and a negative pole end.
In above-mentioned upper converter arm, described A type power model comprises the first direct current capacitor C1, the second direct current capacitor C2, the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4, the 5th semiconductor switch S5, the first sustained diode 1, second sustained diode 2, the 3rd sustained diode 3, the 4th sustained diode 4, the 5th sustained diode 5, first resistance capaciting absorpting circuit CS/RS, the first grading resistor RJ, the first charging diode D6, the second charging diode D7, current-limiting resistance RL, the first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the negative electrode of the 5th sustained diode 5, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the emitter of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the anode of the 5th sustained diode 5, the emitter of the first described semiconductor switch S1 is connected as the positive terminal of A type power model with the collector electrode of the second semiconductor switch S2, and the emitter of the 3rd described semiconductor switch S3 is connected as the negative pole end of A type power model with the collector electrode of the 4th described semiconductor switch S4, the positive terminal of the first described direct current capacitor C1 is connected with the collector electrode of the first described semiconductor switch S1, and the negative pole end of the first direct current capacitor C1 is connected with the emitter of the emitter of the second semiconductor switch S2 and the 5th semiconductor switch S5, the positive terminal of the second described direct current capacitor C2 is connected with the collector electrode of the collector electrode of the 3rd semiconductor switch S3 and the 5th semiconductor switch S5, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4, the first described resistance capaciting absorpting circuit CS/RS and the first described grading resistor RJ is parallel to the collector and emitter of the 5th semiconductor switch S5 respectively, the anode of the first described charging diode D6 is connected to the collector electrode of the 5th semiconductor switch S5, and the negative electrode of the first charging diode D6 is connected to the collector electrode of the first semiconductor switch S1, the negative electrode of the second described charging diode D7 is connected to the emitter of the 5th described semiconductor switch S5, the anode of the second charging diode D7 is connected to one end of current-limiting resistance RL, and the other end of current-limiting resistance RL is connected to the emitter of the 4th described semiconductor switch S4.
In above-mentioned lower converter arm, described Type B power model comprises the 3rd direct current capacitor C3, 4th direct current capacitor C4, 6th semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, 9th semiconductor switch S9, tenth semiconductor switch S10, protection controllable silicon S11, 6th continuous sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11, tenth sustained diode 12, 11 sustained diode 13, second resistance capaciting absorpting circuit CS1/RS1, second grading resistor RJ1, 3rd charging diode D14 and the 4th charging diode D15, the 6th described semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, the collector electrode of the 9th semiconductor switch S9 and the tenth semiconductor switch S10 respectively with the 6th described sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11 is connected with the negative electrode of the tenth sustained diode 12, 6th semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, the emitter of the 9th semiconductor switch S9 and the tenth semiconductor switch S10 respectively with the 6th sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11 is connected with the anode of the tenth sustained diode 12, the anode of described protection controllable silicon S11 is connected with the negative electrode of the 11 described sustained diode 13, and the negative electrode of protection controllable silicon S11 is connected with the anode of the 11 sustained diode 13, the emitter of the 6th described semiconductor switch S6 is connected as the positive terminal of Type B power model with the collector electrode of the 7th semiconductor switch S7, and the emitter of the 8th described semiconductor switch S8 is connected as the negative pole end of Type B power model with the collector electrode of the 9th described semiconductor switch S9, the positive terminal of the 3rd described direct current capacitor C3 is connected with the collector electrode of the 6th described semiconductor switch S6, the emitter of the negative pole end of the 3rd direct current capacitor C3 and the emitter of the 7th semiconductor switch S7, the tenth semiconductor switch S10 and protect the negative electrode of controllable silicon S11 to be connected, the collector electrode of the positive terminal of the 4th described direct current capacitor C4 and the collector electrode of the 8th semiconductor switch S8, the tenth semiconductor switch S10 and protect the anode of controllable silicon S11 to be connected, the negative pole end of the 4th direct current capacitor C4 is connected with the emitter of the 9th semiconductor switch S9, the second described resistance capaciting absorpting circuit CS1/RS1 and the second described grading resistor RJ1 is parallel to the collector and emitter of the tenth semiconductor switch S10 respectively, the anode of the 3rd described charging diode D14 is connected to the collector electrode of the tenth semiconductor switch S10, and the negative electrode of the 3rd described charging diode D14 is connected to the collector electrode of the 6th semiconductor switch S6, the negative electrode of the 4th described charging diode D15 is connected to the emitter of the tenth described semiconductor switch S10, and the anode of the 4th described charging diode D15 is connected to the emitter of the 9th described semiconductor switch S9.
The band DC Line Fault that the present invention proposes removes the modularization multi-level converter of function, and its advantage is: use protection IGBT in conjunction with lower-cost silicon-controlled device to realize the removing of direct-current short circuit electric current, reduction current transformer holistic cost also reduces running wastage.The modularization multi-level converter removing function based on band DC Line Fault of the present invention can be applied to overhead wire flexible DC power transmission (VSC-HVDC) etc.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams that band DC Line Fault of the present invention removes the modularization multi-level converter of function.
The circuit theory diagrams of upper converter arm in the modularization multi-level converter that Fig. 2 is the band DC Line Fault removing function shown in Fig. 1.
The circuit theory diagrams of lower converter arm in the modularization multi-level converter that Fig. 3 is the band DC Line Fault removing function shown in Fig. 1.
Fig. 4 is the circuit theory diagrams of A type power model in the upper converter arm shown in Fig. 2.
Fig. 5 is the circuit theory diagrams of Type B power model in the upper converter arm shown in Fig. 3.
Embodiment
The band DC Line Fault that the present invention proposes removes the modularization multi-level converter of function, comprises converter arm, first group of three filter reactor and second group of three filter reactor under converter arm on three platforms, three platforms; On three described platforms three positive terminals of converter arm connect together rear as described in band DC Line Fault remove the direct-flow positive pole end of modularization multi-level converter of function, on three platforms, three negative pole ends of converter arm are connected respectively to one end of first group of three filter reactor, and the other end of first group of three filter reactor removes the three-phase alternating current phase line end of the modularization multi-level converter of function respectively as described band DC Line Fault; Under three platforms three negative pole ends of converter arm connect together rear as described in band DC Line Fault remove the direct current negative pole end of modularization multi-level converter of function, under three platforms, three positive terminals of converter arm are connected respectively to one end of second group of three filter reactor, and the other end of second group of three filter reactor is connected respectively to the three-phase alternating current phase line end that described band DC Line Fault removes the modularization multi-level converter of function.
As shown in Figure 1, be with DC Line Fault to remove the modularization multi-level converter of function and comprise on three platforms converter arm (2), two groups six filter reactors (3) under converter arm (1), three platforms.On three platforms, the positive terminal of converter arm (1) connects together the rear direct-flow positive pole end DC+ removing the modularization multi-level converter of function as band DC Line Fault; On three platforms, the negative pole end of converter arm (1) is connected respectively to one end of first group of three filter reactors LA1, LB1, LC1, and the other end of LA1, LB1, LC1 removes three-phase alternating current phase line end A, B, C of the modularization multi-level converter of function respectively as band DC Line Fault.Under three platforms, the negative pole end of converter arm (2) connects together the rear direct current negative pole end DC-removing the modularization multi-level converter of function as band DC Line Fault; Under three platforms, the positive terminal of converter arm (2) is connected respectively to one end of second group of three filter reactors LA2, LB2, LC2, and the other end of second group of three filter reactor is connected respectively to three-phase alternating current phase line end A, B, C that band DC Line Fault removes the modularization multi-level converter of function.
As shown in Figure 2, upper converter arm comprises multiple A type power model, and all A type power model employings are connected in series (positive terminal of an A type power model is connected to the negative pole end of another A type power model) and form a positive terminal "+" and a negative pole end "-".
As shown in Figure 3, lower converter arm comprises multiple Type B power model, and all Type B power model employings are connected in series (positive terminal of a Type B power model is connected to the negative pole end of another Type B power model) and form a positive terminal "+" and a negative pole end "-".
As shown in Figure 4, each A type power model comprises the first direct current capacitor C1, the second direct current capacitor C2, the first semiconductor switch S1, the second semiconductor switch S2, the 3rd semiconductor switch S3, the 4th semiconductor switch S4, the 5th semiconductor switch S5, the first sustained diode 1, second sustained diode 2, the 3rd sustained diode 3, the 4th sustained diode 4, the 5th sustained diode 5, first resistance capaciting absorpting circuit CS/RS, the first grading resistor RJ, the first charging diode D6, the second charging diode D7, current-limiting resistance RL, the first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the negative electrode of the 5th sustained diode 5, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the emitter of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the anode of the 5th sustained diode 5, the emitter of the first described semiconductor switch S1 is connected as the positive terminal of A type power model with the collector electrode of the second semiconductor switch S2, and the emitter of the 3rd described semiconductor switch S3 is connected as the negative pole end of A type power model with the collector electrode of the 4th described semiconductor switch S4, the positive terminal of the first described direct current capacitor C1 is connected with the collector electrode of the first described semiconductor switch S1, and the negative pole end of the first direct current capacitor C1 is connected with the emitter of the emitter of the second semiconductor switch S2 and the 5th semiconductor switch S5, the positive terminal of the second described direct current capacitor C2 is connected with the collector electrode of the collector electrode of the 3rd semiconductor switch S3 and the 5th semiconductor switch S5, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4, the first described resistance capaciting absorpting circuit CS/RS and the first described grading resistor RJ is parallel to the collector and emitter of the 5th semiconductor switch S5 respectively, the anode of the first described charging diode D6 is connected to the collector electrode of the 5th semiconductor switch S5, and the negative electrode of the first charging diode D6 is connected to the collector electrode of the first semiconductor switch S1, the negative electrode of the second described charging diode D7 is connected to the emitter of the 5th described semiconductor switch S5, the anode of the second charging diode D7 is connected to one end of current-limiting resistance RL, and the other end of current-limiting resistance RL is connected to the emitter of the 4th described semiconductor switch S4.
As shown in Figure 5, each Type B power model comprises the 3rd direct current capacitor C3, 4th direct current capacitor C4, 6th semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, 9th semiconductor switch S9, tenth semiconductor switch S10, protection controllable silicon S11, 6th continuous sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11, tenth sustained diode 12, 11 sustained diode 13, second resistance capaciting absorpting circuit CS1/RS1, second grading resistor RJ1, 3rd charging diode D14 and the 4th charging diode D15, the 6th described semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, the collector electrode of the 9th semiconductor switch S9 and the tenth semiconductor switch S10 respectively with the 6th described sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11 is connected with the negative electrode of the tenth sustained diode 12, 6th semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, the emitter of the 9th semiconductor switch S9 and the tenth semiconductor switch S10 respectively with the 6th sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11 is connected with the anode of the tenth sustained diode 12, the anode of described protection controllable silicon S11 is connected with the negative electrode of the 11 described sustained diode 13, and the negative electrode of protection controllable silicon S11 is connected with the anode of the 11 sustained diode 13, the emitter of the 6th described semiconductor switch S6 is connected as the positive terminal of Type B power model with the collector electrode of the 7th semiconductor switch S7, and the emitter of the 8th described semiconductor switch S8 is connected as the negative pole end of Type B power model with the collector electrode of the 9th described semiconductor switch S9, the positive terminal of the 3rd described direct current capacitor C3 is connected with the collector electrode of the 6th described semiconductor switch S6, the emitter of the negative pole end of the 3rd direct current capacitor C3 and the emitter of the 7th semiconductor switch S7, the tenth semiconductor switch S10 and protect the negative electrode of controllable silicon S11 to be connected, the collector electrode of the positive terminal of the 4th described direct current capacitor C4 and the collector electrode of the 8th semiconductor switch S8, the tenth semiconductor switch S10 and protect the anode of controllable silicon S11 to be connected, the negative pole end of the 4th direct current capacitor C4 is connected with the emitter of the 9th semiconductor switch S9, the second described resistance capaciting absorpting circuit CS1/RS1 and the second described grading resistor RJ1 is parallel to the collector and emitter of the tenth semiconductor switch S10 respectively, the anode of the 3rd described charging diode D14 is connected to the collector electrode of the tenth semiconductor switch S10, and the negative electrode of the 3rd described charging diode D14 is connected to the collector electrode of the 6th semiconductor switch S6, the negative electrode of the 4th described charging diode D15 is connected to the emitter of the tenth described semiconductor switch S10, and the anode of the 4th described charging diode D15 is connected to the emitter of the 9th described semiconductor switch S9.
Band DC Line Fault of the present invention removes the modularization multi-level converter of function, for A type power model, is powering on the charging initial stage, S5 not conducting.When DC capacitor C1, C2 Voltage Establishment is to after making module control circuit work, S5 is applied in gate pole Continuity signal, makes C1, C2 continue charging process until charging terminates by S5 and D5.During normal work, gate pole conducting drive singal is applied to the 5th semiconductor switch S5 always, make S5 be in conducting state always.When detecting Converter DC-side short trouble; first semiconductor switch S1, the second semiconductor switch S2 of A type power model, the 3rd semiconductor switch S3, the 4th semiconductor switch S4 and the 5th semiconductor switch S5 locking immediately turn off; short circuit current can decline rapidly, thus the semiconductor switch of available protecting A type power module circuit and fly-wheel diode.D6, D7, RL provide rectification charging loop in converter start-up course, and RL plays the effect turning off the size of current of limit inflow D7 at S5, makes D7 can select the diode of small electric current capacity.
Band DC Line Fault of the present invention removes the modularization multi-level converter of function, for Type B power model, is powering on the charging initial stage, S10, S11 not conductings.When DC capacitor C3, C4 Voltage Establishment is to after making module control circuit work, S10, S11 are applied in gate pole Continuity signal, make C3, C4 continue charging process until charging terminates by S10/S11 and D12/D13.When device normally works, S10 locking, applies gate pole conducting drive singal to protection controllable silicon S11 always, makes S11 be in conducting state always.When detecting current transformer dc-side short-circuit fault; first semiconductor switch S6, the second semiconductor switch S7, the 3rd semiconductor switch S8, the 4th semiconductor switch S9 and protection controllable silicon S11 latch actuation pulse immediately; make bridge arm current to get back to zero current because the S5 in A type power model turns off, S11 also can be turned off naturally.D14, D15 provide rectification charging loop in converter start-up course, make C3, C4 to obtain equalizing charge.CS1/RS1 and RJ1 makes S11 can keep all pressing with the S5 in the A type power model of other series connection and the S11 in Type B power model upon opening.
Band DC Line Fault of the present invention is removed in the modularization multi-level converter of function, its key uses A type power model that bridgc arm short electric current is reduced to zero fast, and the application target of Type B power model is the loss of converter when reducing normal operation, and reduce the cost of converter.A type power model and Type B power model also can be mixed in upper converter arm and lower converter arm.Any equivalent transformation circuit done based on circuit of the present invention, all belongs to protection scope of the present invention.
Claims (5)
1. remove the modularization multi-level converter of function with DC Line Fault, it is characterized in that, this modularization multi-level converter comprises converter arm, first group of three filter reactor and second group of three filter reactor under converter arm on three platforms, three platforms; On three described platforms three positive terminals of converter arm connect together rear as described in band DC Line Fault remove the direct-flow positive pole end of modularization multi-level converter of function, on three platforms, three negative pole ends of converter arm are connected respectively to one end of first group of three filter reactor, and the other end of first group of three filter reactor removes the three-phase alternating current phase line end of the modularization multi-level converter of function respectively as described band DC Line Fault; Under three platforms three negative pole ends of converter arm connect together rear as described in band DC Line Fault remove the direct current negative pole end of modularization multi-level converter of function, under three platforms, three positive terminals of converter arm are connected respectively to one end of second group of three filter reactor, and the other end of second group of three filter reactor is connected respectively to the three-phase alternating current phase line end that described band DC Line Fault removes the modularization multi-level converter of function.
2. modularization multi-level converter as claimed in claim 1, is characterized in that, wherein said upper converter arm, comprises multiple A type power model, and multiple A type power model adopts and is connected in series formation positive terminal and a negative pole end.
3. modularization multi-level converter as claimed in claim 1, is characterized in that wherein said lower converter arm comprises multiple Type B power model, and multiple Type B power model adopts and is connected in series formation positive terminal and a negative pole end.
4. modularization multi-level converter as claimed in claim 2, it is characterized in that, wherein said A type power model comprises the first direct current capacitor C1, second direct current capacitor C2, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, 4th semiconductor switch S4, 5th semiconductor switch S5, first sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4, 5th sustained diode 5, first resistance capaciting absorpting circuit CS/RS, first grading resistor RJ, first charging diode D6, second charging diode D7, current-limiting resistance RL,
The first described semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the collector electrode of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the negative electrode of the 5th sustained diode 5, first semiconductor switch S1, second semiconductor switch S2, 3rd semiconductor switch S3, the emitter of the 4th semiconductor switch S4 and the 5th semiconductor switch S5 respectively with the first described sustained diode 1, second sustained diode 2, 3rd sustained diode 3, 4th sustained diode 4 is connected with the anode of the 5th sustained diode 5, the emitter of the first described semiconductor switch S1 is connected as the positive terminal of A type power model with the collector electrode of the second semiconductor switch S2, and the emitter of the 3rd described semiconductor switch S3 is connected as the negative pole end of A type power model with the collector electrode of the 4th described semiconductor switch S4, the positive terminal of the first described direct current capacitor C1 is connected with the collector electrode of the first described semiconductor switch S1, and the negative pole end of the first direct current capacitor C1 is connected with the emitter of the emitter of the second semiconductor switch S2 and the 5th semiconductor switch S5, the positive terminal of the second described direct current capacitor C2 is connected with the collector electrode of the collector electrode of the 3rd semiconductor switch S3 and the 5th semiconductor switch S5, and the negative pole end of the second direct current capacitor C2 is connected with the emitter of the 4th semiconductor switch S4, the first described resistance capaciting absorpting circuit CS/RS and the first described grading resistor RJ is parallel to the collector and emitter of the 5th semiconductor switch S5 respectively, the anode of the first described charging diode D6 is connected to the collector electrode of the 5th semiconductor switch S5, and the negative electrode of the first charging diode D6 is connected to the collector electrode of the first semiconductor switch S1, the negative electrode of the second described charging diode D7 is connected to the emitter of the 5th described semiconductor switch S5, the anode of the second charging diode D7 is connected to one end of current-limiting resistance RL, and the other end of current-limiting resistance RL is connected to the emitter of the 4th described semiconductor switch S4.
5. modularization multi-level converter as claimed in claim 3, it is characterized in that, wherein said Type B power model comprises the 3rd direct current capacitor C3, 4th direct current capacitor C4, 6th semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, 9th semiconductor switch S9, tenth semiconductor switch S10, protection controllable silicon S11, 6th continuous sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11, tenth sustained diode 12, 11 sustained diode 13, second resistance capaciting absorpting circuit CS1/RS1, second grading resistor RJ1, 3rd charging diode D14 and the 4th charging diode D15,
The 6th described semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, the collector electrode of the 9th semiconductor switch S9 and the tenth semiconductor switch S10 respectively with the 6th described sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11 is connected with the negative electrode of the tenth sustained diode 12, 6th semiconductor switch S6, 7th semiconductor switch S7, 8th semiconductor switch S8, the emitter of the 9th semiconductor switch S9 and the tenth semiconductor switch S10 respectively with the 6th sustained diode 8, 7th sustained diode 9, 8th sustained diode 10, 9th sustained diode 11 is connected with the anode of the tenth sustained diode 12, the anode of described protection controllable silicon S11 is connected with the negative electrode of the 11 described sustained diode 13, and the negative electrode of protection controllable silicon S11 is connected with the anode of the 11 sustained diode 13, the emitter of the 6th described semiconductor switch S6 is connected as the positive terminal of Type B power model with the collector electrode of the 7th semiconductor switch S7, and the emitter of the 8th described semiconductor switch S8 is connected as the negative pole end of Type B power model with the collector electrode of the 9th described semiconductor switch S9, the positive terminal of the 3rd described direct current capacitor C3 is connected with the collector electrode of the 6th described semiconductor switch S6, the emitter of the negative pole end of the 3rd direct current capacitor C3 and the emitter of the 7th semiconductor switch S7, the tenth semiconductor switch S10 and protect the negative electrode of controllable silicon S11 to be connected, the collector electrode of the positive terminal of the 4th described direct current capacitor C4 and the collector electrode of the 8th semiconductor switch S8, the tenth semiconductor switch S10 and protect the anode of controllable silicon S11 to be connected, the negative pole end of the 4th direct current capacitor C4 is connected with the emitter of the 9th semiconductor switch S9, the second described resistance capaciting absorpting circuit CS1/RS1 and the second described grading resistor RJ1 is parallel to the collector and emitter of the tenth semiconductor switch S10 respectively, the anode of the 3rd described charging diode D14 is connected to the collector electrode of the tenth semiconductor switch S10, and the negative electrode of the 3rd described charging diode D14 is connected to the collector electrode of the 6th semiconductor switch S6, the negative electrode of the 4th described charging diode D15 is connected to the emitter of the tenth described semiconductor switch S10, and the anode of the 4th described charging diode D15 is connected to the emitter of the 9th described semiconductor switch S9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511028577.4A CN105429496A (en) | 2015-12-31 | 2015-12-31 | Modular multilevel converter with DC fault elimination function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511028577.4A CN105429496A (en) | 2015-12-31 | 2015-12-31 | Modular multilevel converter with DC fault elimination function |
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| Publication Number | Publication Date |
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| CN105429496A true CN105429496A (en) | 2016-03-23 |
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| CN201511028577.4A Pending CN105429496A (en) | 2015-12-31 | 2015-12-31 | Modular multilevel converter with DC fault elimination function |
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| CN106301041A (en) * | 2016-09-09 | 2017-01-04 | 北京四方继保自动化股份有限公司 | A kind of hybrid guided mode massing multilevel converter of band direct-current short circuit error protection |
| CN111049407A (en) * | 2020-01-03 | 2020-04-21 | 东南大学 | Series-parallel modular multilevel converter with current-breaking capability and control method thereof |
| CN111049409A (en) * | 2020-01-06 | 2020-04-21 | 阳光电源股份有限公司 | Voltage mixed type clamp type three-level inverter circuit and application device thereof |
| CN112821739A (en) * | 2019-11-18 | 2021-05-18 | 南京南瑞继保电气有限公司 | Converter arm, series high-voltage direct-current transformer and control method |
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| CN111049409A (en) * | 2020-01-06 | 2020-04-21 | 阳光电源股份有限公司 | Voltage mixed type clamp type three-level inverter circuit and application device thereof |
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