CN105489759A - Phase change memory and manufacturing method thereof - Google Patents
Phase change memory and manufacturing method thereof Download PDFInfo
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- CN105489759A CN105489759A CN201610034388.6A CN201610034388A CN105489759A CN 105489759 A CN105489759 A CN 105489759A CN 201610034388 A CN201610034388 A CN 201610034388A CN 105489759 A CN105489759 A CN 105489759A
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- 230000015654 memory Effects 0.000 title claims abstract description 76
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- 238000000059 patterning Methods 0.000 claims abstract description 95
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- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
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- 239000005360 phosphosilicate glass Substances 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 5
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- 229910052721 tungsten Inorganic materials 0.000 description 5
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- 239000010937 tungsten Substances 0.000 description 4
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- 229910001040 Beta-titanium Inorganic materials 0.000 description 2
- 229910018110 Se—Te Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
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Abstract
The invention discloses a phase change memory and a manufacturing method thereof. The manufacturing method of the phase change memory comprises the following operation that (i) a first conductive contact structure is formed and penetrates through a first dielectric layer; (ii) a patterning heating material layer is formed and covers the top surface of the first conductive contact structure and a part of the first dielectric layer; (iii) a second dielectric layer is formed and covers the patterning heating material layer; (iv) a first notch is formed and penetrates through the second dielectric layer and the patterning heating material layer, and the patterning heating material layer is broken apart so that a first heating element and a second heating element are formed; and (v) a phase change element is formed in the first notch, and the phase change element is contacted with the edge of the first heating element and the edge of the second heating element. The invention also discloses the phase change memory. The phase change memory has higher data write-in speed and reliability.
Description
Technical field
The invention relates to a kind of phase-change memory and manufacture method thereof.
Background technology
Computer or other electronic installations are configured with various types of memory body usually, such as random access memory (RAM), read-only memory (ROM), Dynamic Random Access Memory (DRAM), synchronous dynamic random-access memory body (SDRAM), phase change random access memory (PCRAM) or fast flash memory bank.Phase-change memory is nonvolatile memory body, obtains by measuring the resistance value of memory cell the data be stored in wherein.Generally speaking, phase-change memory unit comprises heating element and phase change cell, and phase change cell can because be heated and undergoing phase transition.When passing into electric current to heating element, converting electric energy is become heat by heating element, and the heat produced impels the change of phase change cell generation phase, such as, be transformed into polycrystalline phase (polycrystalline) from amorphous phase (amorphous).Phase change cell has different resistance values mutually different, via detecting or the resistance value reading phase change cell, is just judged the data types of memory cell.There is provided higher writing speed and better reliability to be the target that memory body manufacturer makes great efforts always.
Summary of the invention
An aspect of of the present present invention is to provide a kind of manufacture method of phase-change memory, and the method can form the heating element of less width, and allows phase change element that crystalline phase change occurs more quickly, and effectively can improve the yield of procedure for producing.The method comprises following operation: (i) forms one first conductive contact structure and run through one first dielectric layer; (ii) form a patterning heating material layer and cover an end face of the first conductive contact structure and the first dielectric layer of a part; (iii) one second dielectric layer coverage diagram patterning heating material layer is formed; (iv) form one first recess and run through the second dielectric layer and patterning heating material layer, wherein patterning heating material layer disconnects and forms one first heating element and one second heating element by the first recess, and a bottom surface of the first heating element contacts the end face of the first conductive contact structure; And (v) forms a phase change element in the first recess and phase change element contacts an edge of the first heating element and an edge of the second heating element.
In some embodiments, said method can comprise following operation further: (vi) forms one the 3rd dielectric layer and cover phase change element and the second dielectric layer; (vii) form one second recess and run through the 3rd dielectric layer and the second dielectric layer to expose a part for the second heating element; And (viii) forms one second conductive contact structure in the second recess and on the 3rd dielectric layer, wherein a bottom surface of the second conductive contact structure contacts the described part of the second heating element.
In some embodiments, above-mentioned first recess extends in the first dielectric layer further.
In some embodiments, after formation first recess, also comprise: etch a sidewall of the first dielectric layer in the first recess and a sidewall of the second dielectric layer, make the edge of the first heating element protrude the sidewall of the first dielectric layer and the sidewall of the second dielectric layer.
In some embodiments, the length that the edge of the first heating element protrudes the sidewall of the first dielectric layer or the sidewall of the second dielectric layer is about 1/5 to 1/20,1/5 to 1/15,1/8 to 1/15 or 1/10 to 1/12 of the thickness of the first heating element.
In some embodiments, the operation that aforesaid operations (ii) forms patterning heating material layer comprises the following steps: (a) forms a heating material layer on the first conductive contact structure and the first dielectric layer; B () forms a patterning shade on heating material layer; (c) etching heating material layer, and a pattern of patterning shade is passed to heating material layer, to form a patterning heating material layer; And (d) removes patterning shade.
In some embodiments, in the operation forming this patterning heating material layer, above-mentioned patterning heating material layer has the pattern of a rectangle.In some embodiments, in the operation forming this patterning heating material layer, this patterning heating material layer comprises one first wide portion, one second wide portion and a wide portion of neck bridge first and the second wide portion, and the width in the width in the first wide portion and the second wide portion is greater than the width of narrow portion; And the operation wherein forming the first recess comprises the part removing neck, and fragmentary patterning heating material layer.In some embodiments, in the operation forming this patterning heating material layer, patterning heating material layer comprises one first wide portion, one second wide portion, one first narrow portion and one second narrow portion, first narrow portion and the second wide portion of narrow portion bridge joint first and the second wide portion, the width in the first wide portion and the width in the second wide portion are greater than the width of the first narrow portion and the width of the second narrow portion; And the operation wherein forming the first recess comprises a part for a part and the second narrow portion removing the first narrow portion, and disconnect this patterning heating material layer.
In some embodiments, above-mentioned patterning heating material layer comprises mutually stacking multiple sub-structure, and wherein the material of at least two adjacent sub-structure is different each other, there is a resistivity differences between the material of described at least two adjacent sub-structure.Above-mentioned resistivity differences can be 3 times to 80 times, 3 times to 70 times, 3 times to 60 times, 3 times to 50 times, 3 times to 40 times, 3 times to 30 times, 3 times to 20 times or 3 times to 10 times.
Another aspect of the present invention is to provide a kind of phase-change memory, and this phase-change memory comprises one first conductive contact structure, one first heating element, one second heating element, a phase change element and one second conductive contact structure.First heating element is positioned on an end face of the first conductive contact structure, and extends laterally to the position surmounting end face from end face.The horizontal expansion on a height identical in fact with position of second heating element, and the second heating element and the first heating element interval one spacing.Phase change element is configured at the spacing between the first heating element and the second heating element.Phase change element comprises a first side wall and one second sidewall, contacts an edge of the first heating element and an edge of the second heating element respectively.Second conductive contact structure contacts and is configured on the second heating element.
In some embodiments, the first heating element and the second heating element have the pattern of a rectangle separately.
In some embodiments, first heating element comprises a wide portion and a narrow portion, wide portion and narrow portion horizontal expansion on above-mentioned height, and a width in wide portion is greater than a width of narrow portion, wherein wide portion is positioned on the end face of the first conductive contact structure, and narrow portion leniently portion extends to the first side wall of phase change element.
In some embodiments, the first heating element comprises a wide portion, one first narrow portion and one second narrow portion, and the first narrow portion and the second narrow portion leniently portion extend to the first side wall of phase change element.
In some embodiments, a thickness of the first heating element is 2 to 40nm.
In some embodiments, the first heating element comprises mutually stacking multiple sub-structure, and wherein the material of at least two adjacent sub-structure is different each other, there is a resistivity differences between the material of described at least two adjacent sub-structure.
In some embodiments, above-mentioned resistivity differences is 3 times of the material in these sub-structure with minimum specific resistance to 80 times.
In some embodiments, the edge of the first heating element embeds the first side wall of phase change element.
In some embodiments, the edge of the first heating element embeds a length of the first side wall of phase change element is 1/5 to 1/20 of a thickness of the first heating element.
According to some execution mode in addition of the present invention, a kind of phase-change memory comprises one first conductive contact structure, a heating element, a phase change element and one second conductive contact structure.Heating element comprises a wide portion and one first narrow portion, and wherein wide portion is positioned on an end face of the first conductive contact structure, and the first narrow portion leniently portion laterally extends end face, and a width in wide portion is greater than a width of the first narrow portion.Phase change element comprises a sidewall, the first narrow portion of this sidewall material contact heating element.Second conductive contact structure is configured on phase change element, and an end face of contact phase change element.
In some embodiments, heating element also comprises one second narrow portion, and the second narrow portion extends laterally to the sidewall of phase change element by wide portion, and wherein a width of the second narrow portion equals in fact the width of the first narrow portion.
In some embodiments, substantial parallel first narrow portion of the second narrow portion, and a length of the second narrow portion equals in fact a length of the first narrow portion.
In some embodiments, a thickness of heating element is 2 to 40nm.
In some embodiments, heating element comprises mutually stacking multiple sub-structure, and wherein the material of at least two adjacent sub-structure is different each other, there is a resistivity differences between the material of described at least two adjacent sub-structure.
In some embodiments, resistivity differences is 3 times of the material in these sub-structure with minimum specific resistance to 80 times.
In some embodiments, one end of the first narrow portion of heating element embeds the sidewall of phase change element.
In some embodiments, the end of the first narrow portion embeds a length of the sidewall of phase change element is 1/5 to 1/20 of a thickness of heating element.
Accompanying drawing explanation
Figure 1A illustrates the flow chart of the method for the manufacture phase-change memory according to the various execution mode of the present invention;
Figure 1B illustrates the flow chart of other operations of the method for the manufacture phase-change memory of some execution mode of the present invention;
Fig. 1 C illustrates the flow chart of steps realizing operating 20 in Figure 1A;
Fig. 2 A, 3A, 4A, 5A, 6A, 7B, 8A, 9A, 10A, 10B, 12,13,16A and 17A illustrate the top view of the various execution mode of the present invention in different process stage;
Fig. 2 B, 3B, 4B, 5B, 6B, 7A, 8B, 9B, 10C, 11A, 11B, 14A, 15A and 16B illustrate the various execution mode of the present invention in different process stage along the generalized section of line segment A-A ';
Figure 14 B, 15B and 17B illustrate the various execution mode of the present invention in different process stage along the generalized section of line segment B-B ';
Figure 14 C illustrates the partial enlarged drawing of the region C in Figure 14 B.
Embodiment
In order to make of the present inventionly to describe more detailed and complete, hereafter have been directed to embodiments of the present invention and specific embodiment proposes illustrative description; But this not implements or uses the unique forms of the specific embodiment of the invention.Each embodiment disclosed below, can mutually combine or replace, also can add other embodiment in one embodiment, and need not further record or illustrate useful when.
In the following description, following embodiment is fully understood describing many specific detail in detail to enable reader.But, can when putting into practice embodiments of the invention without when these specific detail.In other cases, for simplifying accompanying drawing, the structure known and device are only schematically illustrated in figure.
Usage space relative terms in this article, such as " below ", " under ", " top ", " on " etc., this is the relativeness for the ease of describing between an element or feature and another element or feature, as in figure illustrate.The true meaning of these relative terms spatially comprises other orientation.Such as, when diagram spins upside down 180 degree, the relation between an element and another element, may from " below ", " under " become " top ", " on ".In addition, relative describing spatially used herein also should do same explanation.
Various execution mode of the present invention is to provide a kind of method manufacturing phase-change memory.Figure 1A illustrates the flow chart of the method 1 of the manufacture phase-change memory according to the various execution mode of the present invention.Method 1 comprises operation 10, operation 20, operation 30, operation 40 and operation 50.
Although hereinafter utilize a series of operation or step that the method disclosed at this is described, these operations or the order shown in step should not be interpreted as restriction of the present invention.Such as, some operation or step can be undertaken by different order and/or carry out with other step simultaneously.In addition, all steps illustrated of non-essential execution could realize embodiments of the present invention.In addition, each operation described herein or step can comprise several sub-step or action.
Execution mode 1
In the operation 10 of Figure 1A, form the first conductive contact structure and run through the first dielectric layer.Fig. 2 A illustrates the upper schematic diagram of some execution mode of the present invention in executable operations 10, and Fig. 2 B illustrates the generalized section along line segment A-A ' in Fig. 2 A.As shown in Figure 2 A and 2 B, in the first dielectric layer 111, form the first conductive contact structure 120, first conductive contact structure 120 run through the first dielectric layer 111.
In some embodiments, first dielectric layer 111 can be formed on semiconductor base material (not illustrating), and semiconductor substrate can comprise doping or unadulterated Silicon Wafer or semiconductor upper insulator (SOI) base material or similar semi-conducting material.In some is implemented, active member comprises N-type metal-oxide semiconductor (MOS) (NMOS) element, P-type mos (PMOS) element or CMOS (Complementary Metal Oxide Semiconductor) (CMOS) element or similar element.In some embodiments, active member comprises grid, source region and drain region.In certain embodiments, semiconductor substrate also comprises at least one shallow slot isolation structure, in order to isolate the drain region between two active members.
In certain embodiments, first dielectric layer 111 can be any applicable dielectric material, the dielectric materials such as the silex glass of such as silicon nitride, silica, doping, first dielectric layer 111 also can be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silex glass (FSG), carbofrax material or above-mentioned combination or similar material.
In certain embodiments, the first conductive contact structure 120 can be such as the metal via structure comprising tungsten (W) material, and the first conductive contact structure 120 may also be other metal material.
In operation 20, form patterning heating material layer and cover the end face of the first conductive contact structure and the first dielectric layer of part.The invention provides multiple concrete execution mode to realize operation 20, Fig. 1 C illustrates the detailed step flow chart carrying out operation 20 of some execution mode of the present invention, operation 20 comprises step 21, step 22, step 23 and step 24, the operation 20 that Fig. 3 A, 3B, 4A and 4B illustrate present embodiment is looked and generalized section on the different step stage, wherein Fig. 3 A and Fig. 4 A is upper schematic diagram, and Fig. 3 B and Fig. 4 B is the generalized section along line segment A-A '.Although hereinafter utilize a series of step to illustrate the method or operation that disclose at this, the order shown in these steps should not be interpreted as restriction of the present invention.Such as, some step can be undertaken by different order and/or carry out with other step simultaneously.In addition, all steps illustrated of non-essential execution could realize embodiments of the present invention.In addition, each step described herein can comprise several sub-step or action.Have various ways can realize operation 20, operation 20 of the present invention is not limited to step 21, step 22, step 23 and the step 24 that Fig. 1 C illustrates.
In the step 21 of Fig. 1 C, form heating material layer 130' on the first conductive contact structure 120 and the first dielectric layer 111, as shown in Fig. 3 A and Fig. 3 B.In some embodiments, blanket-deposited technology is used on the first dielectric layer 111, to form heating material layer 130', such as physical vapour deposition (PVD) processing procedure (PVD), chemical vapor deposition process (CVD), plasma enhanced chemical vapor (PECVD), ald processing procedure (ALD) and/or atomic layer chemical vapor deposition processing procedure (ALCVD) etc.In some embodiments, heating material layer 130' can comprise the combination of titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), iridium (Ir), β-titanium (β-Ta), tungsten nitride (WN), tungsten (W), platinum (Pt) or similar material or above-mentioned material.
In the step 22 of Fig. 1 C, form patterning shade 141 on heating material layer 130', as shown in fig. 4 a and fig. 4b.Patterning shade 141 corresponds to the first conductive contact structure 120 at least partly.
In the step 23 of Fig. 1 C, as shown in 4A and 4B figure, heating material layer 130' is etched, and the pattern of patterning shade 141 is passed to heating material layer 130', to form patterning heating material layer 130.Patterning heating material layer 130 contacts the end face 120a of the first conductive contact structure 120.Specifically, patterning shade 141 can be such as eurymeric photoresistance, amorphous silicon hard mask or other suitable materials.Patterning hard mask 141 has pattern identical in fact with patterning heating material layer 130.In the present embodiment, the upper end out line of patterning heating material layer 130 is quadrangle, as shown in Figure 4 A.In some embodiments, the thickness of patterning heating material layer 130 can be about 2nm to about 40nm, better about 3nm to about 20nm, better about 5nm to about 10nm.If the thickness of patterning heating material layer 130 is too thick, the performance of final products may be unfavorable for, but when the thickness of patterning heating material layer 130 is too thin, the dose rate of successive process may be caused to decline, hereafter will more describe in detail.
In the step 24 of Fig. 1 C, remove patterning shade 141.Such as, when patterning shade 141 is photoresists, blocking solution of delustering (striper) can be used to remove patterning shade 141; When patterning shade 141 is amorphous silicon hard masks, suitable etch process can be utilized to remove patterning shade 141.After execution step 21-24, just complete the operation 20 of Figure 1A, namely-form patterning heating material layer 130 to cover the end face 120a of the first conductive contact structure 120 and the first dielectric layer 111 of part.
Go back to Figure 1A, in operation 30, form the second dielectric layer 112 coverage diagram patterning heating material layer 130, as shown in Fig. 5 A and Fig. 5 B.In some embodiments, the second dielectric layer 112 also covers the part that the first dielectric layer 111 is not patterned heating material layer 130 covering.In some embodiments, second dielectric layer 112 material can be such as the dielectric material such as silex glass of silicon nitride, silica, doping, second dielectric layer 112 also can be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silex glass (FSG), carbofrax material or above-mentioned combination or similar material.
In the operation 40 of Figure 1A, form the first recess 151 and run through the second dielectric layer 112 and patterning heating material layer 130, as shown in Fig. 6 A and Fig. 6 B.Patterning heating material layer 130 disconnects and forms the first heating element 131 and the second heating element 132, the first heating element 131 is positioned on the end face 120a of the first conductive contact structure 120 by the first recess 151.In some embodiments, first form patterning shade 142 on the second dielectric layer 112, patterning shade 142 has an opening, this opening correspond to patterning heating material layer 130 at least partially.Then, carry out etch process, remove the part of the second dielectric layer 112 and the part of patterning heating material layer 130 that are positioned at opening, and form the first recess 151.In certain embodiments, etch process also removes the first dielectric layer 111 of a part, allows the first recess 151 extend in the first dielectric layer 111.In multiple execution mode, after forming the first recess 151, remove patterning shade 142.
In the operation 50 of Figure 1A, form phase change element 160 in the first recess 151, as shown in Figure 7 A.For example, first can deposit one deck phase-change material layer on the second dielectric layer 112, and fill up the first recess 151; Then carry out cmp, remove the part of phase-change material layer position above the second dielectric layer 112, and obtain being filled in the phase change element 160 in the first recess 151.Phase change element 160 contacts an edge 131b of a first heating element 131 and edge 132b of the second heating element 132.First heating element 131 extends laterally to the position P surmounting end face 120 from end face 120a.In some embodiments, the first heating element 131 and the horizontal expansion in a height H identical in fact with position P of the second heating element 132, and the second heating element 132 and the first heating element 131 interval one interval S.Fig. 7 B illustrates the upper schematic diagram of the relativeness of phase change element 160, first heating element 131 and the second heating element 132.Specifically, phase change element 160 is configured in the interval S between the first heating element 131 and the second heating element 132, phase change element 160 comprises the first side wall 160b and the second sidewall 160b', contacts the first heating unit edge 131b of 131 and the edge 132b of the second heating element 132 respectively.In the present embodiment, the pattern of the first heating element 131 and the second heating element 132 is rectangle.
In some embodiments, phase change element comprises germanium-antimony-tellurium (GST) material, such as Ge
2sb
2te
5, Ge
1sb
2te
4, Ge
1sb
4te
7or above-mentioned combination or similar material.Other phase-transition materials can be such as GeTe, Sb2Te3, GaSb, InSb, Al-Te, Te-Sn-Se, Ge-Sb-Te, In-Sb-Te, Ge-Se-Ga, Bi-Se-Sb, Ga-Se-Te, Sn-Sb-Te, In-Sb-Ge, Te-Ge-Sb-S, Te-Ge-Sn-O, Sb-Te-Bi-Se, Te-Ge-Sn-Au, Pd-Te-Ge-Sn, In-Se-Ti-Co, Ge-Sb-Te-Pd, Ag-In-Sb-Te, Ge-Te-Sn-Pt, Ge-Te-Sn-Ni, Ge-Te-Sn-Pd and Ge-Sb-Se-Te.
The thickness of phase change element 160 is not particularly limited, only need the thickness being greater than the first heating element 131 and the second heating element 132, phase change element 160 is had with the edge 131b of the first heating element 131 and the edge 132b of the second heating element 132 and fully contacts.Phase change element 160 can because be heated and undergoing phase transition.In phase-change memory running, electric current is transmitted to the second heating element 132 from the first conductive contact structure by the first heating element 131 and phase change element 160, a part of converting electric energy can be become heat by the first heating element 131, the heat produced impels phase change element 160 that the change of phase occurs, such as be transformed into polycrystalline phase (polycrystalline) or crystalline phase (crystalline) from amorphous phase (amorphous), or become amorphous phase from polycrystalline phase or crystal transition.Phase change element 160 has different resistance values in different crystalline phases, via detecting or the resistance value reading phase change element 160, is just judged the data types of memory cell.
After operation 50, method 1 optionally comprises other operations, the operation 60 that such as Figure 1B illustrates, operation 70 and operation 80.
In operation 60, form the 3rd dielectric layer 113 and cover phase change element 160 and the second dielectric layer 112, as shown in Figure 7 A.3rd dielectric layer 113 can be any applicable dielectric material, the dielectric materials such as the silex glass of such as silicon nitride, silica, doping, 3rd dielectric layer 113 also can be formed by the dielectric material of low-k, such as phosphosilicate glass (PSG), boron-phosphorosilicate glass (BPSG), fluorine silex glass (FSG), carbofrax material or above-mentioned combination or similar material.
After operation 60, executable operations 70, please refer to Fig. 8 A and Fig. 8 B, forms the second recess 152 and runs through the 3rd dielectric layer 113 and the second dielectric layer 112, to expose a part for the second heating element 132.For example, in operation 70, first form patterning shade 143 on the second dielectric layer 112, patterning shade 143 has an opening and corresponds to the second heating element 132.Then, carry out etch process, remove the part of second dielectric layer 112 of position in the opening range of patterning shade 143 and the part of the 3rd dielectric layer 113, allow the second heating element 132 come out from the second recess 152.
As mentioned before, according to certain embodiments of the invention, the thickness of patterning heating material layer 130 (being indicated in Fig. 3 B, Fig. 4 B and Fig. 5 B) is about 2nm to about 40nm.The thickness of patterning heating material layer 130 determines in fact the thickness of the first heating element 131 and the second heating element 132.If the thickness of patterning heating material layer 130 is too thin, such as, be less than about 2nm, in the etching process of formation second recess 152, the second heating element 132 may be run through, and is not enough to become etching stopping layer.Such as, otherwise if the thickness of patterning heating material layer is too thick, be greater than about 40nm, then the first heating element 131 becomes large with the contact area of phase change element 160.When electric current is by the first heating element 131, will the current density of the first heating element 131 be caused to reduce, thus reduce the heating effect of the first heating element 131 pairs of phase change elements 160, be therefore unfavorable for the performance of final products.So according to certain embodiments of the invention, the thickness of patterning heating material layer 130 (or first heating element 131 and second heating element 132) is about 2nm to about 40nm.
Then executable operations 80, forms the second conductive contact structure 170 in the second recess 152 and on the 3rd dielectric layer 113, as shown in Fig. 9 A and Fig. 9 B.The bottom surface 170a of the second conductive contact structure 170 contacts the end face 132a of the second heating element 132.In certain embodiments, the second conductive contact structure 170 can be such as the metal material or other metal materials be applicable to that comprise tungsten (W).
The content of the above-mentioned exposure of the present invention provides a kind of phase-change memory 100 simultaneously.Please refer to Fig. 9 B, phase-change memory 100 comprises the first conductive contact structure 120, first heating element 131, second heating element 132, phase change element 160 and the second conductive contact structure 170.First heating element 131 is positioned on the end face 120a of the first conductive contact structure 120, and extends laterally to the position P surmounting end face 120a from end face 120a.The horizontal expansion in the height H identical in fact with position P of second heating element 132, and the second heating element 132 and the first heating element 131 interval one interval S.Phase change element 160 is configured in the interval S between the first heating element 131 and the second heating element 132.Phase change element 160 comprises the first side wall 160b and the second sidewall 160b', contacts the edge 131b of the first heating element 131 and edge 132b of the second heating element 132 respectively.Second conductive contact structure 170 contacts and is configured on the second heating element 132.In present embodiment 1, the first heating element 131 and the second heating element 132 present rectangle in a plane graph (or top view).
According to the structure of the phase-change memory 100 of above-mentioned exposure, electric current can heat via the first side wall 160b of the first conductive contact structure 120 and the first heating element 131 pairs of phase change elements 160, allows the first side wall undergoing phase transition of 160b and reach the object of storage data.On the other hand, according in other execution modes of the present invention, electric current also can heat via the second sidewall 160b' of the second conductive contact structure 170 and the second heating element 132 pairs of phase change elements 160, allows the second undergoing phase transition of sidewall 160b'.So the phase-change memory 100 disclosed in present embodiment 1 has better design flexibility.In addition, because the contact area of phase change element 160 and the first heating element 131 and/or the second heating element 132 determined by the thickness of the first heating element 131 and/or the second heating element 132, therefore form less contact area easily by forming the first heating element 131 of thinner thickness and/or the second heating element 132.This less contact area can allow the first heating element 131 or the second heating element 132 provide larger current density (current density is defined as the sectional area that the magnitude of current passes through divided by electric current), therefore contribute to allowing phase change element 160 that crystalline phase occurs rapidly to change, thus speed and the reliability of write data can be improved.
Execution mode 2
Execution mode 2 comprises the operation 10-50 described in execution mode 1, and compared to execution mode 1, one of them difference of execution mode 2 is, execution mode 2 has different upper end out lines at the patterning heating material layer that operation 20 is formed.Figure 10 A illustrates the top view of the patterning heating material layer 230 of execution mode 2.In Figure 10 A, the same or similar element in execution mode 1 represents with identical component symbol.The patterning heating material layer 230 of execution mode 2 comprises the first wide portion 230x, the second wide portion 230y and neck 230z.The wide portion 230x of neck 230z bridge joint first and the second wide portion 230y.The width D 1 of the first wide portion 230x and the width D 2 of the second wide portion 230y are greater than the width D 3 of neck 230z.Specifically, patterning heating material layer 230 has the pattern of similar dumb-bell shape.The method forming patterning heating material layer 230 with reference to the describing of step 21-step 24 above about Fig. 1 C, can not repeat in this.
Compared to execution mode 1, another difference of execution mode 2 is, the operation 40 of execution mode 2 comprises the part removing neck 230z.Figure 10 B illustrates the upper schematic diagram of present embodiment 2 after executable operations 40 (namely-form the first recess) and operation 50 (namely-formation phase change elements).The first recess 151 that operation 40 is formed is overlapping with a part of neck 230z, therefore operates 40 and comprises the part removing neck 230z.Patterning heating material layer 230 disconnects in the position of neck 230z by the first recess 151, and forms the first heating element 231 and the second heating element 232.First heating element 231 comprises wide portion 231x and narrow portion 231z, and the width D 1 of wide portion 231x is greater than the width D 3 of narrow portion 231z.In other words, the pattern of the first heating element 231 of present embodiment 2 is for being similar to " convex " word shape, and the pattern of the second heating element 232 is rectangle.Phase change element 160 is filled in the first recess 151.Other details of execution mode 2 can be identical with execution mode 1.After executable operations 50, execution mode 2 optionally comprises operation 60 that Figure 1B illustrates, operation 70 and operation 80.
Figure 10 C illustrates the generalized section of the phase-change memory 200 obtained by present embodiment 2, and the hatching of Figure 10 C is the position of Figure 10 B middle conductor A-A '.Referring to Figure 10 B and Figure 10 C, phase-change memory 200 comprises the first conductive contact structure 120, first heating element 231, second heating element 232, phase change element 160 and the second conductive contact structure 170.Wide portion 231x and narrow portion 231z horizontal expansion on sustained height of the first heating element 231, wide portion 231x is positioned on the end face 120a of the first conductive contact structure 120, and narrow portion 231z leniently portion 231x extends to the first side wall 160b of phase change element 160.The horizontal expansion in a height H identical in fact with position P of second heating element 232, and the second heating element 232 and the first heating element 231 interval one interval S.Phase change element 160 is configured at the interval S between the first heating element 231 and the second heating element 232.Phase change element 160 comprises the first side wall 160b and the second sidewall 160b', contacts the edge 231b of the first heating element 231 and edge 232b of the second heating element 232 respectively.Second conductive contact structure 170 contacts and is configured on the second heating element 232.
Because the width of the narrow portion 231z of the first heating element 231 is less than the width of wide portion 231x, when electric current is passed to narrow portion 231z by wide portion 231x, current density is improved, so the edge 231b of narrow portion 231z has very large current density, contribute to allowing phase change element 160 that crystalline phase occurs rapidly to change, thus speed and the reliability of write data can be improved.
Execution mode 3
Execution mode 3 comprises the operation 10-50 described in execution mode 1, and compared to execution mode 1, one of them difference of execution mode 3 is, execution mode 3 comprises mutually stacking multiple sub-structure at the patterning heating material layer that operation 20 is formed.Figure 11 A illustrates the generalized section after embodiments of the present invention 3 executable operations 20, and in Figure 11 A, the same or similar element in execution mode 1 represents with identical component symbol.Specifically, the patterning heating material layer 330' of execution mode 3 comprises mutually stacking multiple sub-structure 3301,3302,3303.In sub-structure 3301,3302,3303, the material of at least two adjacent sub-structure is different each other, to make having a resistivity differences between two adjacent sub-structure.In many embodiment:, this resistivity differences is about 3 times to about 80 times of the material in these sub-structure with minimum specific resistance, such as, be about 3 times to about 70 times, about 3 times to about 60 times, about 3 times to about 50 times, about 3 times to about 40 times, about 3 times to about 30 times, about 3 times to about 20 times or about 3 times to about 10 times.Resistivity differences between above-mentioned two adjacent sub-structure, the interface between two adjacent sub-structure is allowed to form higher resistivity, so when electric current is by this interface, higher temperature can be produced, and be conducive to impelling phase change element 160 that crystalline phase change occurs.The pattern of the patterning heating material layer 330' of present embodiment 3 can with execution mode 1 or execution mode 2 same or similar.
In some embodiment of present embodiment 3, the material of the sub-structure 3301,3302,3303 of patterning heating material layer 330' can comprise the combination of titanium nitride (TiN), tantalum nitride (TaN), titanium (Ti), iridium (Ir), β-titanium (β-Ta), tungsten nitride (WN), tungsten (W), platinum (Pt) or above-mentioned material or similar material independently of one another.For example, the material of sub-structure 3301/3302/3303 can be TaN/TiN/TaN, TiN/TaN/TiN, TiN/Ir/TiN, Ir/TiN/Ir, β-Ta/TiN/ β-Ta, TiN/ β-Ta/TiN, WN/TiN/WN, TiN/WN/TiN, TiN/W/TiN, W/TaN/W, Pt/Ir/Pt or Ir/Pt/Ir.
In some embodiments, the gross thickness of patterning heating material layer 330' can be 2 to 40nm, better 3 to 20nm, better 5 to 10nm.The thickness of each sub-structure 3301,3302,3303 may be the same or different.
Figure 11 B illustrates the generalized section of the phase-change memory 300 obtained by execution mode 3.Patterning heating material layer 330' forms the first heating element 331 and the second heating element 332 in operation 40.Phase-change memory 300 comprises the first conductive contact structure 120, first heating element 331, second heating element 332 and phase change element 160.First conductive contact structure 120 is positioned on the end face 120a of the first conductive contact structure 120, and extends laterally to the position P surmounting end face 120a from end face 120a.The horizontal expansion in a height H identical in fact with position P of second heating element 332, and the second heating element 332 and the first heating element 331 interval one interval S.Phase change element 160 is configured at the interval S between the first heating element 331 and the second heating element 332.Phase change element 160 comprises a first side wall 160b and one second sidewall 160b', contacts the edge 331b of the first heating element 331 and edge 332b of the second heating element 332 respectively.Second conductive contact structure 170 to be configured on the second heating element 332 and contact the second heating element 332.In present embodiment 3, first heating element 331 and the second heating element 332 comprise mutually stacking multiple sub-structure 3311/3312/3313,3321/3322/3323 respectively, wherein the material of at least two adjacent sub-structure is different each other, allows between the material of two adjacent sub-structure and there is a resistivity differences.
Execution mode 4
Execution mode 4 comprises the operation 10-50 described in execution mode 1, and compared to execution mode 1, one of them difference of execution mode 4 is, execution mode 4 has different upper end out lines at the patterning heating material layer that operation 20 is formed.Figure 12 to Figure 14 C illustrates the schematic diagram of patterning heating material layer 430 in the different fabrication stage of execution mode 4, and wherein Figure 12 and Figure 13 is upper schematic diagram, and Figure 14 A-Figure 14 C is generalized section.In Figure 12 to Figure 14 C, the same or similar element in execution mode 1 represents with identical component symbol.As shown in figure 12, the patterning heating material layer 430 of execution mode 4 comprises the first wide portion 430x, the second wide portion 430y, the first narrow portion 430z and the second narrow portion 430z', first narrow portion 430z and the second narrow portion 430z' bridge joint first wide portion 430x and the second wide portion 430y, and the width D 5 of the width D 4 of the first wide portion 430x and the second wide portion 230y is greater than the width D 6 of the first narrow portion 430z and/or the width D 7 of the second narrow portion 430z'.Specifically, the pattern of patterning heating material layer 430 is the rectangle with an opening.
Figure 13 illustrates the upper schematic diagram of present embodiment 4 after executable operations 40 and operation 50.Compared to execution mode 1, another difference of execution mode 4 is, the operation 40 of execution mode 4 comprises the part of a part and the second narrow portion 430z' removing the first narrow portion 430z and forms the first recess 151.In addition, patterning heating material layer 430 disconnects by the first recess 151, and forms the first heating element 431 and the second heating element 432.First heating element 431 comprise a wide portion 431x, the first narrow portion 431z and the second narrow portion 431z', the first narrow portion 431z and the second narrow portion 431z' leniently portion 431x extend to the first side wall 160b of phase change element 160.The width D 4 (being indicated in Figure 12) of wide portion 431x is greater than the width D 6 of the first narrow portion 431z and the width D 7 of the second narrow portion 431z'.After formation first recess 151, in the first recess 151, form phase change element 160 (namely-executable operations 50).After executable operations 50, execution mode 4 optionally comprises operation 60 that Figure 1B illustrates, operation 70 and operation 80.
Figure 14 A and Figure 14 B illustrates the profile of the phase-change memory 400 obtained by present embodiment 4 along AA ' segment positions and BB ' segment positions in Figure 13 respectively.The phase-change memory 400 of execution mode 4 comprises the first conductive contact structure 120, first heating element 431, second heating element 432, phase change element 160 and the second conductive contact structure 170.The wide portion 431x of the first heating element 431 is positioned on the end face 120a of the first conductive contact structure 120.Wide portion 431x, the first narrow portion 431z of the first heating element 431 and the second narrow portion 431z' horizontal expansion on sustained height, the first narrow portion 431z and the second narrow portion 431z' leniently portion 431x extends laterally to the position P surmounting end face 120a.The horizontal expansion in a height H identical in fact with position P of second heating element 432, and the second heating element 432 and the first heating element 431 interval one interval S.Phase change element 160 is configured at the interval S between the first heating element 431 and the second heating element 432.Phase change element 160 comprises the first side wall 160b and the second sidewall 160b', contacts an edge 431b of the first heating element 431 and edge 432b of the second heating element 432 respectively.Second conductive contact structure 170 is configured on the second heating element 432, and contacts the second heating element 432.
Figure 14 C illustrates the partial enlarged drawing of the region C in Figure 14 B, in some embodiment of present embodiment 4, operation 40 further can comprise the sidewall of the first dielectric layer 111 in etching first recess 151 and the sidewall of the second dielectric layer 112, makes edge 431b, 431b' of the first heating element 431 protrude the sidewall of the first recess 151.Thus, after the formation phase change element described in executable operations 50, edge 431b, 431b' of the first heating element 431 are just embedded the first side wall 160b of phase change element 160.The length DL that first heating element 431 embeds phase change element 160 is about about 1/5 of the thickness DT of the first heating element 431 to about 1/20, such as, be about 1/6, about 1/7, about 1/8, about 1/10, about 1/12, about 1/15 or about 1/18.When the sidewall of the edge embedding phase change element of heating element can improve phase-change memory running, make because of high temperature phase change element 160 produce the problem of the loose contact that deformation causes, guarantee the reliability that phase change is remembered further.
Go back to Figure 12 and Figure 13, because the width D 4 of the wide portion 431x of the first heating element 431 is greater than the summation of the width D 6 of the first narrow portion 431z and the width D 7 of the second narrow portion 431z', when electric current is passed to the first narrow portion 431z and the second narrow portion 431z' by wide portion 431x, the current density of the first narrow portion 431z and the second narrow portion 431z' is improved, so the edge 431b of the first narrow portion 431z and the edge 431b ' of the second narrow portion 431z' has very large current density, contribute to allowing phase change element 160 that crystalline phase occurs rapidly to change, thus speed and the reliability of write data can be improved.Moreover, owing to having two contact points (namely-edge 431b, 431b') between the first heating element 431 and phase change element 160, therefore when one of them contacts is bad, electric current can be delivered to phase change element 160 from another contact, makes phase-change memory maintain normal running.
Execution mode 5
Execution mode 5 is similar to execution mode 4, and both are difference, and the first heating element of execution mode 5 and each self-contained mutually stacking multiple sub-structure of the second heating element, these sub-structure are identical with the content above described in execution mode 3.The top view of the phase-change memory of present embodiment 5 is similar to the 13rd figure that execution mode 4 illustrates.
Figure 15 A and Figure 15 B illustrates the generalized section of the phase-change memory 500 of embodiment of the present invention 5, and wherein Figure 15 A illustrates the generalized section along AA ' segment positions in the 13rd figure, and Figure 15 B illustrates the generalized section along BB ' segment positions in the 13rd figure.In Figure 15 A and Figure 15 B, the same or similar element in execution mode 4 represents with identical component symbol.Letter speech, the phase-change memory 500 of execution mode 5 comprises the first conductive contact structure 120, first heating element 531, second heating element 532, phase change element 160 and the second conductive contact structure 170.First heating element 531 comprises multiple sub-structure 5311,5312,5313 of stacked on top.Similarly, the second heating element 532 comprises multiple sub-structure 5321,5322,5323 of stacked on top.In these sub-structure, the material of at least two adjacent sub-structure is different each other, allows between the material of two adjacent sub-structure and there is a resistivity differences.In many embodiment:, this resistivity differences is about 3 times to about 80 times of the material in these sub-structure with minimum specific resistance.Resistivity differences between above-mentioned two adjacent sub-structure, the interface between two adjacent sub-structure is allowed to form higher resistivity, so when electric current is by this interface, higher temperature can be produced, and be conducive to impelling phase change element 160 that crystalline phase change occurs.According to multiple execution mode of the present invention, the material of above-mentioned each sub-structure, thickness and other feature or functions can with identical about the content described in execution mode 3 above.
Execution mode 6
Execution mode 6 is similar to execution mode 2 above, and compared to execution mode 2, one of them difference of present embodiment 6 is, execution mode 6 is different at the upper end out line of the patterning heating material layer that operation 20 is formed.Figure 16 A illustrates the upper schematic diagram of the phase-change memory 600 of present embodiment 6, and Figure 16 B illustrates the generalized section along AA' line segment in Figure 16 A.For accompanying drawing clearly object, Figure 16 A omits other elements above phase change element 160.In Figure 16 A and Figure 16 B, the same or similar element in execution mode 2 represents with identical component symbol.The patterning heating material layer of execution mode 6 comprise wide portion 631x and narrow portion 631z.In other words, compared to Figure 10 A of execution mode 2, the patterning heating material layer of present embodiment 6 does not comprise the second wide portion 230y that 10A figure illustrates.In an execution mode of execution mode 6, the first recess 151 is overlapping with a part of narrow portion 631z, therefore forms the part that can remove narrow portion 631z in the operation of the first recess 151, allows the sidewall 631b of narrow portion 631z expose from the first recess 151.Then, in the first recess 151, form phase change element 160, the sidewall 631b therefore allowing phase change element 160 can contact narrow portion 631z to expose.Afterwards, above phase change element 160, the second conductive contact structure 670 is formed.
Compared to execution mode 2, another difference of present embodiment 6 is, the heating element 631 formed comprises multiple sub-structure 6311,6312,6313 of stacked on top.The material of above-mentioned each sub-structure, thickness and other feature or functions can with identical about the content described in execution mode 3 above.
Therefore, execution mode 6 provides a kind of phase-change memory 600, and it comprises the first conductive contact structure 120, heating element 631, phase change element 160 and the second conductive contact structure 670.Heating element 631 comprises wide portion 631x and narrow portion 631z, and wide portion 631x is positioned on the end face 120a of the first conductive contact structure 120, and narrow portion 631z leniently portion 631x laterally extends end face 120a, and the width D 1 of wide portion 631x is greater than the width D 3 of narrow portion 631z.Phase change element 160 comprises sidewall 160b, the narrow portion 631z of sidewall 160b material contact heating element 631.Second conductive contact structure 670 is configured on phase change element 160, and the end face 160a of contact phase change element 160.In present embodiment 6, heating element 631 presents " convex " font in a top view.
Because the width of the narrow portion 631z of heating element 631 is less than the width of wide portion 631x, when electric current is passed to narrow portion 631z by wide portion 631x, current density is improved, so the edge 631b of narrow portion 631z has very large current density, contribute to allowing phase change element 160 that crystalline phase occurs rapidly to change, thus speed and the reliability of write data can be improved.
In addition, in another execution mode of present embodiment 6, the edge 631b of the narrow portion 631z of above-mentioned heating element 631 can embed in the sidewall 160b of phase change element 160, the edge 631b of narrow portion 631z embeds the length of sidewall 160b and other details or feature, can with identical about the content described in Figure 14 C above.
Execution mode 7
Execution mode 7 is similar to execution mode 6, and both are difference, and the upper end out line of the heating element of execution mode 7 is different.Figure 17 A illustrates the upper schematic diagram of the phase-change memory 700 of present embodiment 7, and Figure 17 B illustrates the generalized section along BB' line segment in Figure 17 A.For accompanying drawing clearly object, Figure 17 A omits other elements above phase change element 160.In Figure 17 A and Figure 17 B, the same or similar element in execution mode 6 represents with identical component symbol.
See Figure 17 A and Figure 17 B, phase-change memory 700 comprises the first conductive contact structure 120, heating element 731, phase change element 160 and the second conductive contact structure 770.Heating element 731 comprises wide portion 731x, the first narrow portion 731z and the second narrow portion 731z'.Wide portion 731x is positioned on the end face 120a of the first conductive contact structure 120, first narrow portion 731z and the second narrow portion 731z' leniently portion 731x laterally extends end face 120a, and the width D 4 of wide portion 731x is greater than the width D 6 of the first narrow portion 731z and the width D 7 of the second narrow portion 731z'.Phase change element 160 comprises sidewall 160b, and the edge 731b of the first narrow portion 731z and the edge 731b ' of the second narrow portion 731z' contacts the sidewall 160b of phase change element 160.Second conductive contact structure 770 is configured on phase change element 160, and the end face 160a of contact phase change element 160.In one embodiment, the substantial parallel first narrow portion 731z of the second narrow portion 731z', and also the length L2 of the second narrow portion 731z' equals in fact the length L1 of the first narrow portion 731z.
As mentioned before, the heating element 731 of present embodiment 7 comprises wide portion 731x, first narrow portion 731z and the second narrow portion 731z', because the width D 4 of wide portion 731x is greater than the summation of the width D 6 of the first narrow portion 731z and the width D 7 of the second narrow portion 731z', when electric current is passed to the first narrow portion 731z and the second narrow portion 731z' by wide portion 731x, the edge 731b of the first narrow portion 731z and the edge 731b ' of the second narrow portion 731z' can provide larger current density, contribute to allowing phase change element 160 that crystalline phase occurs rapidly to change, thus speed and the reliability of write data can be improved.In addition, owing to having two contact points (namely-edge 731b, 731b') between heating element 731 and phase change element 160, therefore, when one of them contact point loose contact, electric current still has another contact point as path, to make phase-change memory can maintain normal running.
Be similar to execution mode 6, in an execution mode of execution mode 7, heating element 731 comprises mutually stacking multiple sub-structure 7311/7312/7313, and the material of above-mentioned each sub-structure, thickness and other feature or functions can with identical about the content described in execution mode 3 above.
Be similar to execution mode 6, in another execution mode of execution mode 7, first narrow portion 731z of above-mentioned heating element 731 and the second narrow portion 731z' can embed the sidewall 160b of phase change element 160, first narrow portion 731z and the second narrow portion 731z embed the length of sidewall 160b and other details or feature, can with identical about the content described in Figure 14 C above.
Although the present invention discloses as above with execution mode; so itself and be not used to limit the present invention; anyly be familiar with this those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (29)
1. manufacture a method for phase-change memory, it is characterized in that comprising following operation:
Form one first conductive contact structure and run through one first dielectric layer;
Form a patterning heating material layer and cover an end face of this first conductive contact structure and this first dielectric layer of a part;
Form one second dielectric layer and cover this patterning heating material layer;
Form one first recess and run through this second dielectric layer and this patterning heating material layer, wherein this patterning heating material layer disconnects and forms one first heating element and one second heating element by this first recess, and a bottom surface of this first heating element contacts this end face of this first conductive contact structure; And
Form a phase change element in this first recess, and this phase change element contacts an edge of this first heating element and an edge of this second heating element.
2. the method manufacturing phase-change memory as claimed in claim 1, is characterized in that, also comprise following operation:
Form one the 3rd dielectric layer and cover this phase change element and this second dielectric layer;
Form one second recess and run through the 3rd dielectric layer and this second dielectric layer to expose a part for this second heating element; And
Form one second conductive contact structure in this second recess and on the 3rd dielectric layer, wherein a bottom surface of this second conductive contact structure contacts this part of this second heating element.
3. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, this first recess extends in this first dielectric layer further.
4. the method manufacturing phase-change memory as claimed in claim 3, it is characterized in that, after this first recess of formation, also comprise: etch a sidewall of this first dielectric layer in this first recess and a sidewall of this second dielectric layer, make this edge of this first heating element protrude this sidewall of this first dielectric layer and this sidewall of this second dielectric layer.
5. the method manufacturing phase-change memory as claimed in claim 4, it is characterized in that, the length that this edge of this first heating element protrudes this sidewall of this first dielectric layer or this sidewall of this second dielectric layer is 1/5 to 1/20 of a thickness of this first heating element.
6. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, the operation forming this patterning heating material layer comprises the following steps:
Form a heating material layer on this first conductive contact structure and this first dielectric layer;
Form a patterning shade on this heating material layer;
Etch this heating material layer, and a pattern of this patterning shade is passed to this heating material layer, to form this patterning heating material layer; And
Remove this patterning shade.
7. the method manufacturing phase-change memory as claimed in claim 1, is characterized in that, in the operation forming this patterning heating material layer, this patterning heating material layer has the pattern of a rectangle.
8. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, in the operation forming this patterning heating material layer, this patterning heating material layer comprises one first wide portion, one second wide portion and a neck, this first wide portion of this neck bridge and the second wide portion, and a width in a width in this first wide portion and this second wide portion is greater than a width of this neck; And the operation wherein forming this first recess comprises the part removing this neck, and disconnect this patterning heating material layer.
9. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, in the operation forming this patterning heating material layer, this patterning heating material layer comprises one first wide portion, one second wide portion, one first narrow portion and one second narrow portion, this first narrow portion and this first wide portion of this second narrow portion bridge joint and the second wide portion, a width in this first wide portion and a width in this second wide portion are greater than a width of this first narrow portion and a width of this second narrow portion; And the operation wherein forming this first recess comprises a part for a part and this second narrow portion removing this first narrow portion, and disconnect this patterning heating material layer.
10. the method manufacturing phase-change memory as claimed in claim 1, it is characterized in that, a thickness of this first heating element is 2 to 40nm.
11. methods manufacturing phase-change memory as claimed in claim 1, it is characterized in that, this patterning heating material layer comprises mutually stacking multiple sub-structure, wherein the material of at least two adjacent sub-structure is different each other, there is a resistivity differences between the material of described at least two adjacent sub-structure.
12. methods manufacturing phase-change memory as claimed in claim 11, it is characterized in that, this resistivity differences is 3 times of the material in described sub-structure with minimum specific resistance to 80 times.
13. 1 kinds of phase-change memories, is characterized in that comprising:
One first conductive contact structure;
One first heating element, is positioned on an end face of this first conductive contact structure, and extends laterally to the position surmounting this end face from this end face;
One second heating element, horizontal expansion on a height identical with this position, and this second heating element and this first heating element interval one spacing;
One phase change element, be configured at this spacing between this first heating element and this second heating element, wherein this phase change element comprises a first side wall and one second sidewall, contacts an edge of this first heating element and an edge of this second heating element respectively; And
One second conductive contact structure, contacts and is configured on this second heating element.
14. phase-change memories as claimed in claim 13, is characterized in that, this first heating element and this second heating element have the pattern of a rectangle separately.
15. phase-change memories as claimed in claim 13, it is characterized in that, this first heating element comprises a wide portion and a narrow portion, this wide portion and the horizontal expansion on this height of this narrow portion, and a width in this wide portion is greater than a width of this narrow portion, wherein this wide portion is positioned on this end face of this first conductive contact structure, and this narrow portion extends to this first side wall of this phase change element from this wide portion.
16. phase-change memories as claimed in claim 13, it is characterized in that, this first heating element comprises a wide portion, one first narrow portion and one second narrow portion, this first narrow portion and this second narrow portion extend to this first side wall of this phase change element from this wide portion.
17. phase-change memories as claimed in claim 13, it is characterized in that, a thickness of this first heating element is 2 to 40nm.
18. phase-change memories as claimed in claim 13, it is characterized in that, this first heating element comprises mutually stacking multiple sub-structure, and wherein the material of at least two adjacent sub-structure is different each other, there is a resistivity differences between the material of described at least two adjacent sub-structure.
19. phase-change memories as claimed in claim 18, is characterized in that, this resistivity differences is 3 times of the material in described sub-structure with minimum specific resistance to 80 times.
20. phase-change memories as claimed in claim 13, is characterized in that, this edge of this first heating element embeds this first side wall of this phase change element.
21. phase-change memories as claimed in claim 20, is characterized in that, the length that this edge of this first heating element embeds this first side wall of this phase change element is 1/5 to 1/20 of a thickness of this first heating element.
22. 1 kinds of phase-change memories, is characterized in that comprising:
One first conductive contact structure;
One heating element, comprise a wide portion and one first narrow portion, wherein this wide portion is positioned on an end face of this first conductive contact structure, and this first narrow portion laterally extends this end face from this wide portion, and a width in this wide portion is greater than a width of this first narrow portion;
One phase change element, comprises a sidewall, this first narrow portion of this this heating element of sidewall material contact; And
One second conductive contact structure, is configured on this phase change element, and contacts an end face of this phase change element.
23. phase-change memories as claimed in claim 22, it is characterized in that, this heating element also comprises one second narrow portion, and this second narrow portion extends laterally to this sidewall of this phase change element by this wide portion, and wherein a width of this second narrow portion equals this width of this first narrow portion.
24. phase-change memories as claimed in claim 22, is characterized in that, this second narrow portion this first narrow portion parallel, and a length of this second narrow portion equals a length of this first narrow portion.
25. phase-change memories as claimed in claim 22, it is characterized in that, a thickness of this heating element is 2 to 40nm.
26. phase-change memories as claimed in claim 22, it is characterized in that, this heating element comprises mutually stacking multiple sub-structure, and wherein the material of at least two adjacent sub-structure is different each other, there is a resistivity differences between the material of described at least two adjacent sub-structure.
27. phase-change memories as claimed in claim 26, is characterized in that, this resistivity differences is 3 times of the material in described sub-structure with minimum specific resistance to 80 times.
28. phase-change memories as claimed in claim 22, is characterized in that, one end of this first narrow portion of this heating element embeds this sidewall of this phase change element.
29. phase-change memories as claimed in claim 22, is characterized in that, the length that this end of this first narrow portion embeds this sidewall of this phase change element is 1/5 to 1/20 of a thickness of this heating element.
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