CN105489665A - Method for printing auxiliary grid lines of solar cell piece - Google Patents
Method for printing auxiliary grid lines of solar cell piece Download PDFInfo
- Publication number
- CN105489665A CN105489665A CN201510917740.6A CN201510917740A CN105489665A CN 105489665 A CN105489665 A CN 105489665A CN 201510917740 A CN201510917740 A CN 201510917740A CN 105489665 A CN105489665 A CN 105489665A
- Authority
- CN
- China
- Prior art keywords
- screen printing
- grid line
- printing plate
- steel wires
- secondary grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007639 printing Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000007650 screen-printing Methods 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 14
- 238000007493 shaping process Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 abstract description 30
- 239000010959 steel Substances 0.000 abstract description 30
- 238000005245 sintering Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000001035 drying Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 4
- 210000002268 wool Anatomy 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 238000004513 sizing Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 230000006855 networking Effects 0.000 description 4
- 230000003872 anastomosis Effects 0.000 description 3
- 238000009841 combustion method Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention provides a method for printing auxiliary grid lines of a solar cell piece. The widths of the auxiliary grid lines can be reduced, and then the conversion efficiency of a produced cell is improved. A 90-degree vertically netted screen printing plate is selected, namely steel wires of the corresponding screen printing plate inside each screen of the screen printing plate are combined to form a rectangular structure; the screen printing plate comprises two sets of screen printing plate steel wires, and the two sets of screen printing plate steel wires are two sets of structures arranged parallel to each other specifically, wherein one set of screen printing plate steel wires parallel to each other are vertical to the other set of screen printing plate steel wires parallel to each other; each auxiliary grid line is designed in parallel openings positioned between two adjacent steel wires of any set of screen printing plate steel wires parallel to each other, and the widths of the auxiliary grid lines are the widths of the parallel openings between the two adjacent steel wires; wool making, diffusion, etching and film coating are performed on silicon wafers, then the screen printing plate and a sizing agent are used for printing, then drying is performed, and finally the cell piece after the printing is finished is dried and sintered through a quick sintering furnace, so that main grid lines and the auxiliary grid lines are formed at the same time after sintering.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, be specially the method for the secondary grid line of a kind of printing solar cell sheet.
Background technology
In the production process of current solar cell, substantially be all adopt the mode of silk screen printing to make electrode, the angle of throwing the net of the half tone that silk screen printing is used is 30 ° or 22.5 °, like this when designing secondary grid line, certainly exist anastomose in the place of secondary grid line, limit the live width of secondary grid line design.Owing to there being the existence of anastomose, in the process of single printing, need the design live width of secondary grid line to drop to less than 35 μm, but in actual production process, this kind of half tone produce cell piece secondary grid line width be difficult to lower than 55 μm, and then cause the raising degree of the conversion efficiency of produced battery to be subject to great restriction.
Summary of the invention
For the problems referred to above, the invention provides the method for the secondary grid line of a kind of printing solar cell sheet, the conversion efficiency of the battery produced by secondary grid line width constriction, and then can improve by it.
The method of the secondary grid line of a kind of printing solar cell sheet, it is characterized in that: selecting is 90 ° of half tones of vertically throwing the net, namely the interior corresponding half tone steel wire combination of each mesh of half tone forms rectangular configuration, half tone comprises two networking version steel wires, two networking version steel wires are specially two groups of two groups of structures of arranging that are parallel to each other, the wherein half tone steel wire that is parallel to each other perpendicular to another group of one group of half tone steel wire be parallel to each other, by in the parallel open of secondary for every root grid line design between two of any one group half tone steel wire be parallel to each other adjacent steel wires, and the width of secondary grid line is the width of the parallel open between two adjacent steel wires, silicon chip is carried out making herbs into wool, diffusion, etching, plated film, then above-mentioned half tone and slurry printing is used, again through drying, finally the cell piece after being completed for printing is tied through the dry combustion method of Fast Sintering bake oven, main gate line after sintering, secondary grid line is formed simultaneously.
It is further characterized in that: the width of shaping described secondary grid line is less than 50 μm, and height is at 15 μm ~ 25 μm, and depth-width ratio improves, and then the conversion efficiency of battery improves;
The aperture opening ratio of described half tone is 60% ~ 80%, and the grid that break during low aperture opening ratio slurry printing are relatively many, and high aperture means that the string diameter of half tone is thinner, is out of shape relatively large, can guarantees that the quality of the cell panel printed is good when half tone aperture opening ratio is 60% ~ 80%;
When described half tone aperture opening ratio is 70%, the comprehensively disconnected factor such as grid, distortion, the cell panel printed by it the best in quality;
Described slurry is specially full-bodied slurry, 90 ° of half tones of vertically throwing the net and full-bodied slurry combine, and after sintering, secondary grid line width is being less than 50 μm, and height is at 15 μm ~ 25 μm, battery conversion efficiency promotes at least 0.2%, and high power gear assembly yield ratio improves greatly.
After adopting technique scheme, selecting is 90 ° of half tones of vertically throwing the net, by in the parallel open of secondary for every root grid line design between two of any one group half tone steel wire be parallel to each other adjacent steel wires, and the width of secondary grid line is the width of the parallel open between two adjacent steel wires, main gate line after sintering, secondary grid line is formed simultaneously, wherein the width of secondary grid line is the width of the parallel open between adjacent steel wire, do not need the existence considering anastomose, the width of actual shaping secondary grid line is the width of design requirement, the width of secondary grid line can relatively before constriction, and then the conversion efficiency of the battery produced is improved.
Embodiment
The method of the secondary grid line of a kind of printing solar cell sheet: selecting is 90 ° of half tones of vertically throwing the net, namely the interior corresponding half tone steel wire combination of each mesh of half tone forms rectangular configuration, half tone comprises two networking version steel wires, two networking version steel wires are specially two groups of two groups of structures of arranging that are parallel to each other, the wherein half tone steel wire that is parallel to each other perpendicular to another group of one group of half tone steel wire be parallel to each other, by in the parallel open of secondary for every root grid line design between two of any one group half tone steel wire be parallel to each other adjacent steel wires, and the width of secondary grid line is the width of the parallel open between two adjacent steel wires, silicon chip is carried out making herbs into wool, diffusion, etching, plated film, then above-mentioned half tone and slurry printing is used, again through drying, finally the cell piece after being completed for printing is tied through the dry combustion method of Fast Sintering bake oven, main gate line after sintering, secondary grid line is formed simultaneously, wherein the width of secondary grid line is less than within 50 μm, height is at 15 μm ~ 25 μm.
The aperture opening ratio of half tone is 60% ~ 80%, and the grid that break during low aperture opening ratio slurry printing are relatively many, and high aperture means that the string diameter of half tone is thinner, is out of shape relatively large, can guarantees that the quality of the cell panel printed is good when half tone aperture opening ratio is 60% ~ 80%;
When half tone aperture opening ratio is 70%, the comprehensively disconnected factor such as grid, distortion, the cell panel printed by it the best in quality;
Slurry is specially full-bodied slurry, 90 ° of half tones of vertically throwing the net and full-bodied slurry combine, and after sintering, secondary grid line width is being less than 50 μm, and height is at 15 μm ~ 25 μm, battery conversion efficiency promotes at least 0.2%, and high power gear assembly yield ratio improves greatly.
Specific embodiment: select 90 ° of half tones of vertically throwing the net, and the aperture opening ratio of half tone is 70%, in the design of the secondary grid line of the every root parallel open between two adjacent steel wires, secondary grid line live width is designed to 30 μm, and the width of the parallel open between two adjacent steel wires is also 30 μm; Prepare the slurry 90X2 that full-bodied contact performance is good, viscosity is 450mpa.s; By 156 silicon chips, carry out making herbs into wool, diffusion, etching, plated film, then use above-mentioned half tone and slurry printing, then through drying; Cell piece after being completed for printing is through Fast Sintering bake oven dry combustion method knot, and the width of the secondary grid line of formation is 30 μm, highly be 15 μm, and the depth-width ratio of secondary grid line is large, the conversion efficiency lifting of battery.
Above specific embodiments of the invention have been described in detail, but content being only the preferred embodiment of the invention, the practical range for limiting the invention can not being considered to.All equalizations done according to the invention application range change and improve, and all should still belong within patent covering scope of the present invention.
Claims (5)
1. the method for the secondary grid line of printing solar cell sheet, it is characterized in that: after monocrystalline silicon piece flocking also diffusion, through plasma etching, reinstall and carry out PECVD plated film in the graphite boat of semi-saturation cvd nitride silicon technology, afterwards the monocrystalline silicon piece after plated film is formed cell piece after silk screen printing, after the combination of multi-disc cell piece, cell piece coated surface uses anti reflection glass lamination, non-coated surface uses black backboard lamination, by assembly rim frame after lamination, manufactures photovoltaic module.
2. the method for the secondary grid line of a kind of printing solar cell sheet as claimed in claim 1, is characterized in that: the width of shaping described secondary grid line is less than 50 μm, and height is at 15 μm ~ 25 μm, and depth-width ratio improves.
3. the method for the secondary grid line of a kind of printing solar cell sheet as claimed in claim 1 or 2, is characterized in that: the aperture opening ratio of described half tone is 60% ~ 80%.
4. the method for the secondary grid line of a kind of printing solar cell sheet as claimed in claim 3, is characterized in that: described half tone aperture opening ratio is 70%.
5. the method for the secondary grid line of a kind of printing solar cell sheet as claimed in claim 1, is characterized in that: described slurry is specially full-bodied slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510917740.6A CN105489665A (en) | 2015-12-11 | 2015-12-11 | Method for printing auxiliary grid lines of solar cell piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510917740.6A CN105489665A (en) | 2015-12-11 | 2015-12-11 | Method for printing auxiliary grid lines of solar cell piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105489665A true CN105489665A (en) | 2016-04-13 |
Family
ID=55676528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510917740.6A Pending CN105489665A (en) | 2015-12-11 | 2015-12-11 | Method for printing auxiliary grid lines of solar cell piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105489665A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978776A (en) * | 2008-03-17 | 2011-02-16 | Lg化学株式会社 | Heating element and manufacturing method for same |
| CN102741945A (en) * | 2010-01-19 | 2012-10-17 | 国立大学法人京都大学 | Conductive film and method for manufacturing same |
| CN103034050A (en) * | 2013-01-15 | 2013-04-10 | 北京市合众创能光电技术有限公司 | High-precision silver grid line screen production method for crystalline silicon solar cells |
| CN103050552A (en) * | 2013-01-09 | 2013-04-17 | 奥特斯维能源（太仓）有限公司 | Solar cell front grid line and production method of cell assembly thereof |
-
2015
- 2015-12-11 CN CN201510917740.6A patent/CN105489665A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101978776A (en) * | 2008-03-17 | 2011-02-16 | Lg化学株式会社 | Heating element and manufacturing method for same |
| CN102741945A (en) * | 2010-01-19 | 2012-10-17 | 国立大学法人京都大学 | Conductive film and method for manufacturing same |
| CN103050552A (en) * | 2013-01-09 | 2013-04-17 | 奥特斯维能源（太仓）有限公司 | Solar cell front grid line and production method of cell assembly thereof |
| CN103034050A (en) * | 2013-01-15 | 2013-04-10 | 北京市合众创能光电技术有限公司 | High-precision silver grid line screen production method for crystalline silicon solar cells |
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| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160413 |
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| RJ01 | Rejection of invention patent application after publication |