CN105487151A - Grating preparation method through pattern transfer based on nano-imprint - Google Patents
Grating preparation method through pattern transfer based on nano-imprint Download PDFInfo
- Publication number
- CN105487151A CN105487151A CN201610043749.3A CN201610043749A CN105487151A CN 105487151 A CN105487151 A CN 105487151A CN 201610043749 A CN201610043749 A CN 201610043749A CN 105487151 A CN105487151 A CN 105487151A
- Authority
- CN
- China
- Prior art keywords
- grating
- nano
- substrate
- polymer
- imprint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The invention belongs to the technical field of optical thin-film micro-nano structures, and provides a grating preparation method through pattern transfer based on nano-imprint. The grating preparation method through pattern transfer based on nano-imprint is characterized by comprising the following steps that 1) polymers are coated on a substrate; 2) a pressing mould template is prepared; 3) the imprint process is performed: the substrate on which the polymers are coated and the pressing mould template are installed on the two imprint discs of an imprint machine, and pressurization is performed when temperature is close to polymer glassy phase change point temperature through heating so that the polymers are enabled to be fully filled with pressing mould patterns and then cooling is performed; and the pressing mould template and the substrate are separated when temperature is close to the phase change point through cooling so that a polymer mask film slot profile is obtained; and 4) micro-nano pattern transfer is performed: required grating ridge material fills in the polymer mask film slot profile by directly using an electron beam evaporation method, deposition thickness is monitored by utilizing the film thickness optical control technology, and then grating structures complementary with the mask film are formed by dissolving the polymer patterns through an organic solvent so that the gratings prepared through pattern transfer based on nano-imprint are obtained. The method is simple in the preparation technology and low in production cost.
Description
Technical field
The invention belongs to optical thin film micro-nano structure preparing technical field, be specifically related to a kind of method that grating is prepared in brand-new micro-nano graph transfer based on nano impression.
Background technology
Grating is the optical device be made up of a large amount of wide equally spaced parallel slits, as a kind of beam splitter, is widely used in the fields such as spectral measurement, optical oomputing and optical information processing.Be not only amalyzing substances composition, exploration of the universe secret must use instrument, also promoted the coordinated development of the subjects such as physics, uranology, biology simultaneously.Since first block of grating in the world made in fraunhofer in 1819, grating manufacturing technique experienced by improvement large several times, at every turn large improvement all depends on technical progress and theoretic breakthrough, the development trend of current grating, just towards the future development of high-diffraction efficiency, large area, new varieties, has broad application prospects.
In order to optimize grating preparation technology further, reduce production cost, simplify preparation flow, applied by lenticular product, people have carried out large quantifier elimination in grating preparation method and technique.Mechanical type ruling grating is application diffraction grating the earliest, mainly utilizes hard cutter heads such as being contained in the adamas of optical grating graduating machine, moves reciprocatingly, be carved into cutting parallel, equidistant, very straight in a large number at the grating blank surface having plated metallic coating in advance.The grating precision of preparation is not high, and grid stroke density is comparatively large, and rose engine is very high to environmental requirement.Utilize the two-beam interference pattern of one-wavelength laser directly to expose the substrate scribbling photoresist, then the holographic grating that plated film obtains in vacuum system after corrosion development, fixing and drying procedure is widely used in grating without advantages such as ghost line, high s/n ratio, fabrication cycle is short, face type is more special grating also can make completely with it and prepare.But in holographic exposure process, parasitic light from the cutter trade of optical element surface, the heterogeneity, lens adhesive interface etc. of refractive index is also coherently added in main interference light beam, and on the grating relief figure after exposure, development, the corresponding shortcomings such as undesired structure graph that are superimposed with also promote further developing of grating preparation technology.Clash into after utilizing ionized inert gas the ion beam etching grating prepared of physical sputtering effect that material surface produces concentrated ruling grating high-diffraction efficiency and holographic grating low stray light, high s/n ratio, without ghost line advantage.But owing to take part in multiple physical and chemical reaction in ion beam etching of Fresnel, thus transfer to suprabasil microstructure graph and whether meet expectation value there is uncertainty.
Nanometer embossing is proposed from nineteen ninety-five Princeton University's nanometer centers director StephenChou, nano impression just causes the concern of domestic and international many scholars with the performance advantage of its uniqueness, be widely used in semiconductor machining and optoelectronic device processing and other fields.Nano impression is a kind of graph copying technology of direct mechanical contact of the flow characteristics based on glue.Compared with traditional photoetching technique, the dimension of picture of nano impression is not by the restriction of optical diffraction limit, only relevant with template precision, therefore have higher resolution, and cost is low, reproducible, the series of advantages such as controllability is strong.For the Graphic transitions of the grating mask that nano impression makes, at present still based on ion beam etching.Due to complex process, preparation cost is high and transfer to suprabasil microstructure graph and have uncertainty, therefore explores a kind of method that micro-nano graph transfer method based on nano impression newly prepares grating and very has meaning.
Summary of the invention
The object of the invention is a kind of method that Graphic transitions based on nano impression prepares grating, the method preparation technology is simple, and production cost is low.
The present invention solves the problems of the technologies described above adopted technical scheme, and a kind of Graphic transitions based on nano impression prepares the method for grating, it is characterized in that including following steps:
1) coating of polymkeric substance on substrate: uniform spin coating one layer of polymeric on the substrate of smooth pieces, puts into baking oven dry for standby;
2) preparation of molding template: molding template pressing mold blank material being processed into required grating geometry;
3) moulding process: the substrate of coat polymers and molding template are installed on two impression dishes of marking press, when being heated near polymer glass state phase point temperature, (pressure is 4 × 10 in pressurization
6pa), make polymkeric substance be full of pressing mold pattern, then cool; When temperature drops near transformation temperature, molding template and substrate are separated; When temperature drops to room temperature, after being dried by substrate, namely obtain polymer mask grooved;
4) micro-nano graph transfer: directly utilize electron-beam vapor deposition method to be filled in polymer mask grooved by required grating ridge material; light-operated thickness technology is utilized to monitor deposit thickness; use organic solvent dissolution polymer pattern again; form the optical grating construction with mask complementation, obtain the grating prepared based on the Graphic transitions of nano impression.
By such scheme, substrate described in step 1) (nanoimprint lithography makes nano-device substrate used) is various optical glass or coated glass, with used similar of normal light carving technology, can be Si sheet, optical glass, be coated with the optical glass etc. of medium or metallic diaphragm.
By such scheme, polymkeric substance described in step 1) is hot padding material (various thermal imprint lithography glue), is generally the one in polymethylmethacrylate (PMMA), polystyrene (PS), dimethyl silicone polymer (PDMS) etc.
By such scheme, the polymkeric substance spin coating thickness described in step 1) is 300-450nm.
By such scheme, step 2) described in pressing mold blank material usually use Si, SiO
2, silicon nitride, adamas or fused quartz etc.The material that the usual selection intensity of pressing mold is high, not easy to wear, thermal deformation is little is as die material.
By such scheme, normally than transformation temperature height 40-100 DEG C near the polymer glass state phase point temperature described in step 3).
By such scheme, the grating ridge material described in step 4) is various conventional grating layer dielectric material or metal material, can be SiO
2, HfO
2or other dielectric materials, also can be the metal materials such as Au, Al.
Nanoimprint lithography relates to the physical contact of pressing mold and substrate surface thin polymer film when impressing, in the process of being contacting and separating, the distortion of pressing mold has just become to affect with wearing and tearing the serious problems that pattern copies, therefore pressing mold must have enough intensity, and in multi-impression, ensure its durability.Pressing mold uses Si, SiO usually
2, silicon nitride, the material such as adamas make.These materials have much excellent character: compression strenght, large tensile strength can reduce distortion and the wearing and tearing of pressing mold; High heat conductance and low thermal coefficient of expansion, make the thermal deformation of pressing mold in heating process very little.In addition, the impression making of repetition can pollute pressing mold, needs to carry out clean pressing mold with strong acid and organic solvent, and this just requires that the material making pressing mold is erosion-resisting inert material.
By such scheme, the organic solvent of the dissolve polymer described in step 4) can be the one in ethylene dichloride, chloroform, acetone, glacial acetic acid, dioxane, tetrahydrofuran etc., depending on adopted polymkeric substance.
By such scheme, in described micro-nano graph transfer, the height of electron-beam evaporation grating ridge material can be less than or equal to polymer mask grooved height, and its deposit thickness can be determined according to required grating ridge height.Wash away after polymerized photoresist mask through organic solvent, again need carry out drying and processing, process conditions and such scheme, described in step 1), baking process is the same, finally obtains the grating micro-nano structure figure with mask arrangement complementation.
Key concept of the present invention is that hard pressing mold blank is processed into a pressing mold; Then spin coating one layer of polymeric film on substrate, puts it into marking press heating, pressurization, then reduces the temperature to below polymer glass temperature, pressing mold and polymeric layer are separated, form grating mask; Required grating ridge material is directly filled in mask groove by the method finally recycling electron beam evaporation grating layer material, then uses organic solvent dissolution polymer graphic structure, forms the optical grating construction with mask arrangement complementation.This micro-nano graph transfer method eliminates the ion beam etching of Fresnel after traditional nano impression, simplifies manufacture craft, cost-saving, has the advantage that grating ridge height of deposition is adjustable and repeatability is high, for grating preparation provides new possibility.
The invention has the beneficial effects as follows: optimize grating preparation technology, reduce production cost, eliminate the ion beam etching of grating mask Graphic transitions after nano impression, only deposited by electron beam evaporation grating ridge material fills mask to obtain required optical grating construction, for micro-nano graph transfer provides new method, reduce grating preparation cost, preparation method is simple, is easy to the advantages such as suitability for industrialized production simultaneously.
Accompanying drawing explanation
Fig. 1 is the nanoimprinting process process flow diagram of embodiment of the present invention step 3).
Fig. 2 is embodiment of the present invention step 4) micro-nano graph transfer process process flow diagram.
Embodiment
Below in conjunction with embodiment, technical scheme of the present invention is described further.
embodiment 1
Step 1): get the substrate of the clean smooth substrate of a upper surface as spin on polymers photoresist, substrate material can be K9 glass or fused quartz, and substrate shape can be disk or square plate.The present embodiment use diameter be the circular K9 glass of 30mm as substrate, with acetone precoating polymerization object plane careful wiping three times, after acetone nature volatile dry, put into German KarlSuss company CT62 type whirl coating platform center.Unlatching hydraulic pressure nitrogen holds the substrate on platform, and instill 3 polymkeric substance (PMMA) solvents to substrate center, arranging rotating speed is 3500r/min, and the time is 30s, and this polymer film thickness arranging lower spin coating is at about 350nm.Close swivelling cover, opens universal stage.After whirl coating terminates, take out substrate, the baking oven putting into German Heraeus company is dried, and arranging oven temperature is 90 DEG C, and baking time is 30min, and the K9 substrate of the good polymkeric substance (PMMA) of spin coating is taken out in end to be dried afterwards.
Step 2): choose the rectangle fused quartz of the smooth 10mmx10mm of clean surface as molding template material, with acetone careful wiping three times on the surface of pre-etched diffraction grating, whirl coating platform is put into after acetone nature volatile dry, instill 3 photoresist solvents, arranging rotating speed is 3500r/min, and the time is 30s.After whirl coating terminates, take out fused quartz put into baking oven and dry, arranging oven temperature is 90 DEG C, and baking time is 30min.The fused quartz of the good photoresist of spin coating is taken out in end to be dried afterwards, adopts the high-octane electron beam exposure of 100keV, puts into JBX5000LS type beamwriter lithography machine and etch after drying of developing.According to the required grooved degree of depth with account for wide ratio and require to arrange corresponding process parameters, take out sample after to be etched and put into organic solvent-acetone and wash away surface residual photoresist, after oven dry, obtain molding template.
Step 3): the spin coating utilizing step 1) to prepare has the K9 substrate of polymkeric substance (PMMA) and step 2) molding template prepared carries out the moulding process of nano impression.Substrate after spin coating and molding template (mould in Fig. 1) are installed on two impression dishes of marking press.The running program of impression as shown in Figure 1.On the glassy phase height Tg (105 DEG C) put substrate and molding template being heated to thin polymer film, be heated to 150 DEG C, now polymkeric substance has good mobility.With certain pressure, (pressure is for 4 × 10 molding template to start marking press
6pa) be pressed onto on on-chip thin polymer film, make polymkeric substance be full of the recessed pattern of molding template.Then cool, when temperature drops near transformation temperature Tg, pressing mold is separated (demoulding) with pressed egative film, carry out the damage that the demoulding can be avoided pressing mold and thin polymer film at this temperature.After impression, original copolymer film is pressed those parts sunk have just become very thin residual polymer layer, and in order to expose the substrate surface below it, must remove these residual layers, the method for removing is anisotropic rie.This etching process slightly can be damaged the pattern of projection, but is not too large on the impact of pattern accuracy.After residual layer etching, moulding process just finishes, and obtains having the polymer mask grooved with required optical grating construction complementation.
Step 4): utilize step 3) to prepare polymer mask grooved and carry out micro-nano graph transfer, as shown in Figure 2.Polymer mask grooved prepared by step 3) and put into ZZS700-6/G molding box formula optical coating system, grating ridge material adopts HfO
2, before evaporation, grating ridge material is fully melt into molten in advance in crucible.The geometric thickness of grating ridge deposition of material and rate of sedimentation are by XTC-2 type crystal oscillator instrument control system, and the optical thickness of film is monitored by light-operated thickness technology.Working vacuum 4.0 × 10
-3pa, substrate temperature is at 25 ~ 50 DEG C, and substrate frame is 45cm, rate of sedimentation 0.1nm/s from the distance of evaporation source, and line value during automatic evaporation is about 160m/A, coating film thickness about 150nm.After optimum configurations completes, start coating machine, required grating ridge material will be filled in polymer mask grooved by evaporation.After evaporation terminates, in stove, vacuum tightness takes out sample after dropping to the outer atmospheric pressure of stove.Then use organic solvent-acetone ultrasonic 20 minutes, temperature is 55 DEG C, then does with nitrogen wind, thus removes remaining polymer residue, obtains required only having deposition material HfO
2optical grating construction (namely based on grating prepared by the Graphic transitions of nano impression).
embodiment 2
Step 1): get the clean smooth diameter of a upper surface be the roundish fused quartz of 30mm as substrate, with acetone the careful wiping of precoating polymerization object plane three times, after acetone nature volatile dry, put into German KarlSuss company CT62 type whirl coating platform center.Unlatching hydraulic pressure nitrogen holds the substrate on platform, and instill 3 polymkeric substance (PS) solvents to substrate center, arranging rotating speed is 3000r/min, and the time is 30s, and this polymer film thickness arranging lower spin coating is at about 400nm.Close swivelling cover, opens universal stage.After whirl coating terminates, take out substrate, the baking oven putting into German Heraeus company is dried, and arranging oven temperature is 90 DEG C, and baking time is 30min, and the fused quartz substrate of the good polymkeric substance (PS) of spin coating is taken out in end to be dried afterwards.
Step 2): choose the rectangle silicon nitride of the smooth 10mmx10mm of clean surface as molding template material, with acetone careful wiping three times on the surface of pre-etched diffraction grating, whirl coating platform is put into after acetone nature volatile dry, instill 3 photoresist solvents, arranging rotating speed is 3000r/min, and the time is 30s.After whirl coating terminates, take out silicon nitride put into baking oven and dry, arranging oven temperature is 90 DEG C, and baking time is 30min.The silicon nitride of the good photoresist of spin coating is taken out in end to be dried afterwards, adopts the high-octane electron beam exposure of 120keV, puts into JBX5000LS type beamwriter lithography machine and etch after drying of developing.According to the required grooved degree of depth with account for wide ratio and require to arrange corresponding process parameters, take out sample after to be etched and put into organic solvent-acetone and wash away surface residual photoresist, after oven dry, obtain molding template.
Step 3): the spin coating utilizing step 1) to prepare has the fused quartz substrate of polymkeric substance (PS) and step 2) molding template prepared carries out the moulding process of nano impression.Substrate after spin coating and molding template are installed on two impression dishes of marking press.The running program of impression as shown in Figure 1.On the glassy phase height Tg (100 DEG C) put substrate and molding template being heated to thin polymer film, be heated to 140 DEG C, now polymkeric substance has good mobility.With certain pressure, (pressure is for 4 × 10 molding template to start marking press
6pa) be pressed onto on on-chip thin polymer film, make polymkeric substance be full of the recessed pattern of pressing mold.Then cool, when temperature drops near transformation temperature Tg, pressing mold is separated (demoulding) with pressed egative film, carry out the damage that the demoulding can be avoided pressing mold and thin polymer film at this temperature.After impression, original copolymer film is pressed those parts sunk have just become very thin residual polymer layer, and in order to expose the substrate surface below it, must remove these residual layers, the method for removing is anisotropic rie.This etching process slightly can be damaged the pattern of projection, but is not too large on the impact of pattern accuracy.After residual layer etching, moulding process just finishes, and obtains having the polymer mask grooved with required optical grating construction complementation.
Step 4): utilize step 3) to prepare polymer mask grooved and carry out micro-nano graph transfer, as shown in Figure 2.Polymer mask grooved prepared by step 3) and put into ZZS700-6/G molding box formula optical coating system, grating ridge material adopts SiO
2, before evaporation, grating ridge material is fully melt into molten in advance in crucible.The geometric thickness of grating ridge deposition of material and rate of sedimentation are by XTC-2 type crystal oscillator instrument control system, and the optical thickness of film is monitored by light-operated thickness technology.Working vacuum 4.0 × 10
-3pa, substrate temperature is at 25 ~ 50 DEG C, and substrate frame is 45cm, rate of sedimentation 0.1nm/s from the distance of evaporation source, and line value during automatic evaporation is about 180m/A, coating film thickness about 300nm.After optimum configurations completes, start coating machine, required grating ridge material will be filled in polymer mask grooved by evaporation.After evaporation terminates, in stove, vacuum tightness takes out sample after dropping to the outer atmospheric pressure of stove.Then use organic solvent ethylene dichloride ultrasonic 20 minutes, temperature is 55 DEG C, then does with nitrogen wind, thus removes remaining polymer residue, obtains required only having deposition material SiO
2optical grating construction.
A kind of method that micro-nano graph transfer method based on nano impression prepares grating is provided in the present embodiment, eliminate the ion beam etching of grating mask Graphic transitions after nano impression, only deposited by electron beam evaporation grating ridge material fills mask to obtain required optical grating construction, for micro-nano graph transfer provides new method, reduce grating preparation cost, preparation method is simply controlled simultaneously.
The above; be only the embodiment in the present invention, but protection scope of the present invention is not limited thereto, any people being familiar with this technology is in disclosed scope; can it is envisioned that convert easily and replace, all should be encompassed in of the present invention comprising within scope.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (9)
1. prepare a method for grating based on the Graphic transitions of nano impression, it is characterized in that including following steps:
1) coating of polymkeric substance on substrate: uniform spin coating one layer of polymeric on the substrate of smooth pieces, puts into baking oven dry for standby;
2) preparation of molding template: molding template pressing mold blank material being processed into required grating geometry;
3) moulding process: the substrate of coat polymers and molding template are installed on two impression dishes of marking press, when being heated near polymer glass state phase point temperature, pressurization, makes polymkeric substance be full of pressing mold pattern, then cools; When temperature drops near transformation temperature, molding template and substrate are separated; When temperature drops to room temperature, after being dried by substrate, namely obtain polymer mask grooved;
4) micro-nano graph transfer: directly utilize electron-beam vapor deposition method to be filled in polymer mask grooved by required grating ridge material; light-operated thickness technology is utilized to monitor deposit thickness; use organic solvent dissolution polymer pattern again; form the optical grating construction with mask complementation, obtain the grating of the Graphic transitions based on nano impression.
2. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: substrate described in step 1) is Si sheet, optical glass, be coated with the optical glass etc. of medium or metallic diaphragm.
3. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: the polymkeric substance described in step 1) is be the one in polymethylmethacrylate (PMMA), polystyrene (PS), dimethyl silicone polymer (PDMS).
4. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: the polymkeric substance spin coating thickness described in step 1) is 300-450nm.
5. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: step 2) described in pressing mold blank material usually use Si, SiO
2, silicon nitride, adamas or fused quartz.
6. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: normally than transformation temperature height 40-100 DEG C near the polymer glass state phase point temperature described in step 3).
7. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: the grating ridge material described in step 4) is SiO
2, HfO
2, one in Au, Al.
8. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: the organic solvent of the dissolve polymer described in step 4) is the one in ethylene dichloride, chloroform, acetone, glacial acetic acid, dioxane, tetrahydrofuran etc.
9. a kind of Graphic transitions based on nano impression according to claim 1 prepares the method for grating, it is characterized in that: in described micro-nano graph transfer, the height of electron-beam evaporation grating ridge material can be less than or equal to polymer mask grooved height, and its deposit thickness can be determined according to required grating ridge height.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610043749.3A CN105487151A (en) | 2016-01-22 | 2016-01-22 | Grating preparation method through pattern transfer based on nano-imprint |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610043749.3A CN105487151A (en) | 2016-01-22 | 2016-01-22 | Grating preparation method through pattern transfer based on nano-imprint |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105487151A true CN105487151A (en) | 2016-04-13 |
Family
ID=55674253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610043749.3A Pending CN105487151A (en) | 2016-01-22 | 2016-01-22 | Grating preparation method through pattern transfer based on nano-imprint |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105487151A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292182A (en) * | 2016-09-23 | 2017-01-04 | 中国科学院深圳先进技术研究院 | The integrated micro-model method of photomask |
| CN106478976A (en) * | 2016-12-02 | 2017-03-08 | 江南大学 | A kind of utilization room temperature shifts the method that stamping technique patterns thermoplastic polymer |
| CN107153229A (en) * | 2017-06-27 | 2017-09-12 | 常州瑞丰特科技有限公司 | The manufacture method of the modulated liquid grating of electric field induction shaping |
| WO2018053800A1 (en) * | 2016-09-23 | 2018-03-29 | 中国科学院深圳先进技术研究院 | Integrated micro-molding method for photomask |
| JP2018074041A (en) * | 2016-10-31 | 2018-05-10 | キヤノン株式会社 | Imprint device, imprint method, and method for manufacturing article |
| CN108061931A (en) * | 2016-11-09 | 2018-05-22 | 三星电子株式会社 | Back light unit and the method that manufactures the back light unit for 3D rendering display |
| CN108255013A (en) * | 2018-02-24 | 2018-07-06 | 安徽工程大学 | A kind of processing method for increasing photoresist grating mask and accounting for wide ratio |
| CN110596805A (en) * | 2019-09-19 | 2019-12-20 | 中国科学院重庆绿色智能技术研究院 | Preparation method of polyimide film optical device with double-sided microstructure |
| CN112782795A (en) * | 2021-01-29 | 2021-05-11 | 鲁东大学 | Method for preparing submicron grating with half period |
| CN114994817A (en) * | 2022-05-17 | 2022-09-02 | 北方夜视技术股份有限公司 | Preparation method of micro-nano grating |
| CN115166885A (en) * | 2022-09-09 | 2022-10-11 | 荣耀终端有限公司 | Diffraction grating structure, preparation method, imaging device and head-mounted equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006168147A (en) * | 2004-12-15 | 2006-06-29 | Aitesu:Kk | Manufacturing method of fine structure using organic/inorganic hybrid material and nano-imprinting technique and fine structure |
| CN1797200A (en) * | 2004-12-23 | 2006-07-05 | 中国科学院微电子研究所 | Method for fabricating T shaped grating by mixed Nano stamping and optical photolithography |
| CN102443824A (en) * | 2010-10-12 | 2012-05-09 | 慧芳股份有限公司 | Method for manufacturing electroplating product with dot matrix grating structure |
-
2016
- 2016-01-22 CN CN201610043749.3A patent/CN105487151A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006168147A (en) * | 2004-12-15 | 2006-06-29 | Aitesu:Kk | Manufacturing method of fine structure using organic/inorganic hybrid material and nano-imprinting technique and fine structure |
| CN1797200A (en) * | 2004-12-23 | 2006-07-05 | 中国科学院微电子研究所 | Method for fabricating T shaped grating by mixed Nano stamping and optical photolithography |
| CN102443824A (en) * | 2010-10-12 | 2012-05-09 | 慧芳股份有限公司 | Method for manufacturing electroplating product with dot matrix grating structure |
Non-Patent Citations (1)
| Title |
|---|
| 袁远 等: "基于纳米压印技术制备200nm周期金自支撑透射光栅", 《南京大学学报（自然科学）》 * |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106292182B (en) * | 2016-09-23 | 2019-11-05 | 中国科学院深圳先进技术研究院 | Photomask integrates micro- model method |
| WO2018053800A1 (en) * | 2016-09-23 | 2018-03-29 | 中国科学院深圳先进技术研究院 | Integrated micro-molding method for photomask |
| CN106292182A (en) * | 2016-09-23 | 2017-01-04 | 中国科学院深圳先进技术研究院 | The integrated micro-model method of photomask |
| JP2018074041A (en) * | 2016-10-31 | 2018-05-10 | キヤノン株式会社 | Imprint device, imprint method, and method for manufacturing article |
| CN108061931A (en) * | 2016-11-09 | 2018-05-22 | 三星电子株式会社 | Back light unit and the method that manufactures the back light unit for 3D rendering display |
| CN106478976B (en) * | 2016-12-02 | 2019-04-16 | 江南大学 | A method of thermoplastic polymer is patterned using room temperature transfer stamping technique |
| CN106478976A (en) * | 2016-12-02 | 2017-03-08 | 江南大学 | A kind of utilization room temperature shifts the method that stamping technique patterns thermoplastic polymer |
| CN107153229B (en) * | 2017-06-27 | 2019-06-21 | 常州瑞丰特科技有限公司 | Electric field induction forms the manufacturing method of modulated liquid grating |
| CN107153229A (en) * | 2017-06-27 | 2017-09-12 | 常州瑞丰特科技有限公司 | The manufacture method of the modulated liquid grating of electric field induction shaping |
| CN108255013A (en) * | 2018-02-24 | 2018-07-06 | 安徽工程大学 | A kind of processing method for increasing photoresist grating mask and accounting for wide ratio |
| CN110596805A (en) * | 2019-09-19 | 2019-12-20 | 中国科学院重庆绿色智能技术研究院 | Preparation method of polyimide film optical device with double-sided microstructure |
| CN112782795A (en) * | 2021-01-29 | 2021-05-11 | 鲁东大学 | Method for preparing submicron grating with half period |
| CN112782795B (en) * | 2021-01-29 | 2022-06-07 | 鲁东大学 | Method for preparing submicron grating with half period |
| CN114994817A (en) * | 2022-05-17 | 2022-09-02 | 北方夜视技术股份有限公司 | Preparation method of micro-nano grating |
| CN115166885A (en) * | 2022-09-09 | 2022-10-11 | 荣耀终端有限公司 | Diffraction grating structure, preparation method, imaging device and head-mounted equipment |
| CN115166885B (en) * | 2022-09-09 | 2023-02-17 | 荣耀终端有限公司 | Diffraction grating structure, preparation method, imaging device and head-mounted equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105487151A (en) | Grating preparation method through pattern transfer based on nano-imprint | |
| EP2627605B1 (en) | Process for producing highly ordered nanopillar or nanohole structures on large areas | |
| US7662544B2 (en) | Method for manufacturing a master, master, method for manufacturing optical elements and optical element | |
| CN101923282B (en) | Nano-imprint resist and nano-imprint method adopting same | |
| US6656398B2 (en) | Process of making a pattern in a film | |
| WO2021017077A1 (en) | Method for preparing diffraction grating waveguide of near-eye display | |
| CN1802265B (en) | Positive tone bi-layer imprint lithography method and compositions therefor | |
| US20050162733A1 (en) | Method of fabricating diffractive lens array and UV dispenser used therein | |
| CN103079788A (en) | Resin mold, production method thereof, and use thereof | |
| CN102159372A (en) | Method for manufacturing wafer lens | |
| CN103592721B (en) | A kind of manufacture method of all-polymer plane optical path | |
| CN102279517A (en) | Nano-imprinting method | |
| CN103809236A (en) | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) | |
| CN104807485A (en) | Novel resin code disc production process | |
| Hobæk et al. | Hydrogen silsesquioxane mold coatings for improved replication of nanopatterns by injection molding | |
| KR20110048061A (en) | Method for manufacturing light trapping layer on transparent substrate for use in photovoltaic device, photovoltaic device and method for manufacturing photovoltaic device | |
| CN108957611A (en) | A kind of manufacturing method of lenticular lenses, lenticular lenses and display equipment | |
| Mekaru et al. | Fabrication of glass-like carbon molds to imprint on glass materials by MEMS processing technologies | |
| Lin et al. | Experimental study on the filling of nano structures with infrared mold surface heating | |
| CN101923283A (en) | Nano-imprint resist and nano-imprint method adopting same | |
| CN101834407A (en) | Method for preparing surface-emitting surface plasma laser by utilizing nanoimprint technology | |
| WO2021109196A1 (en) | Fresnel mold manufacturing method | |
| CN113759451B (en) | Curved surface grating processing device and preparation method | |
| JPH0660441A (en) | Production of stamper for optical disk | |
| JP4554835B2 (en) | Mold for glass and method for producing glass molded product |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160413 |