CN103809236A - Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) - Google Patents
Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) Download PDFInfo
- Publication number
- CN103809236A CN103809236A CN201410091008.3A CN201410091008A CN103809236A CN 103809236 A CN103809236 A CN 103809236A CN 201410091008 A CN201410091008 A CN 201410091008A CN 103809236 A CN103809236 A CN 103809236A
- Authority
- CN
- China
- Prior art keywords
- light guide
- guide plate
- photoresist
- electroforming
- high precision
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a manufacture method for a high precision mesh point light guide plate based on MEMS (micro electro mechanical systems). The manufacture method includes following steps: manufacturing a needed optical resist mesh point preliminary figure; using backflow technology to manufacture a needed optical resist mesh point structure; depositing an electroforming conducting layer; electroforming a light guide plate mesh point coining die; manufacturing the light guide plate by using hot coining technology. Compared with the prior art, the manufacture method for the high precision mesh point light guide plate based on the MEMS has the advantages that the light guide plate manufactured by using the optical resist backflow technology, the micro electroforming technology and the hot coining technology is high in accuracy and high in surface smoothness, and the defect of low accuracy in the prior manufacture methods of silk screen printing, laser drilling and the like is overcome. Simultaneously, the manufacture method is mature in technology, easy to control and low in cost, effectively guarantees uniformity of structure sizes of mesh points of the light guide plate, and is effective expansion of the manufacture methods of the light guide plate.
Description
Technical field
The present invention relates to a kind of method for making of light guide plate, in particular a kind of method for making based on MEMS high precision dot light guide plate.
Background technology
Light guide plate is one of important composition parts in mobile phone or display panel, its major function is that the pointolite of incident is changed into uniform area source, normally by produce the structure of fine setting light in light guide plate, as column, circle or the structure plan such as square.In order to guarantee to enter light homogeneity on exit facet of light guide plate, be by design density difference, the different microstructure of arranging is that uniformity of light is realized in site, thereby improves the overall performance of the backlight module under light guide plate.
Uniformity of light is one of important indicator of evaluation light guide plate overall performance.Light guide plate mesh point scale error and surface smoothness are the inhomogeneity remarkable parameters of influence surface intralamellar part.The method for making of light guide plate is divided and mainly can be divided into two large classes by site: printing-type and non-printing-type, the former is imprinted on ink in light guide plate by the method for serigraphy, makes pattern and the distribution of site.The latter is ejection forming technique, and lattice point structure is designed in mould, and machining precision is higher, becomes the light conducting board processing method of present main flow.Conventional non-printing-type job operation has: the methods such as laser boring, chemical etching and precision optical machinery processing.But the precision of these methods and body structure surface smooth finish have directly affected being uniformly distributed of light guide plate interior lights.Therefore, how improving dimensional accuracy and the body structure surface smooth finish of dot light guide plate inner structure, thereby improve the inner uniformity of light of light guide plate, is a still unsolved difficult problem of traditional diamond-making technique.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of method for making based on MEMS high precision dot light guide plate is provided, light guide plate precision that this method for making makes is high and can effectively guarantee the consistance of physical dimension between site and site, and manufacture craft maturation, cost are low.
The present invention is achieved by the following technical solutions:
Based on a method for making for MEMS high precision dot light guide plate, comprise the steps:
(1) make the required preliminary figure in photoresist site: in the pretreated substrate top surface of process, spin coating one deck photoresist, remove the solvent of photoresist inside through baking, naturally cool to after room temperature, adopt ultraviolet photolithographic technology to expose to photoresist, then develop, after drying up, obtain the required preliminary figure in photoresist site;
(2) adopt technique of backflow to make required photoresist lattice point structure: the preliminary figure in photoresist site that step (1) is obtained is placed in baking oven together with substrate, oven temperature slowly rises to the glass temperature of photoresist from room temperature, keep after a period of time, oven temperature is cooled to room temperature, makes the preliminary figure in photoresist site form required photoresist lattice point structure;
(3) deposition electroforming conductive layer: the photoresist lattice point structure surface deposition one deck electroforming conductive layer forming in step (2);
(4) electroforming light guide plate mesh point impressing mould: the photoresist lattice point structure with electroforming conductive layer that step (3) is obtained, as mother matrix, is placed in electroforming apparatus, by electroforming process, mother matrix is copied, and obtains light guide plate mesh point impressing mould after the demoulding;
(5) thermal imprint process is made light guide plate: utilize the light guide plate mesh point impressing mould of gained in step (4), polymer plate is carried out to hot padding, directly obtain the light guide plate with lattice point structure after the demoulding.
As the preferred implementation of technique scheme, in described step (1), the spin coating rotating speed of photoresist is 500～2000 revolutions per seconds.
As the preferred implementation of technique scheme, in described step (1) ultraviolet photolithographic process, the exposure dose that photoresist is exposed is 100mJ/cm
2, the time shutter is 60～90 seconds; Subsequently, the photoresist after exposure is placed in to TMAH developer for positive photoresist, development time is 45-120 second, then dries up.
As the preferred implementation of technique scheme, in described step (1), the pre-service of substrate comprises following operating process: first use acetone ultrasonic cleaning 5 minutes, dry up, use again alcohol ultrasonic cleaning 5 minutes, dry up, finally use deionized water ultrasonic cleaning 5 minutes, dry up; Then the temperature that substrate is placed in to 150 ℃ is toasted 20-30 minute, to remove the steam in cleaning process, and naturally cools to room temperature.
As the preferred implementation of technique scheme, in described step (1), the temperature of after spin coating photoresist, photoresist being toasted is 100 degree, and the time is 5-10 minute.
As the preferred implementation of technique scheme, in described step (2), baking oven is vacuum drying oven, the temperature of described vacuum drying oven is slowly raised to glass temperature from room temperature, heating rate is 5 ℃/min, is incubated after 30 minutes under glass temperature, cools to room temperature with the speed of 5 ℃/min.
As the preferred implementation of technique scheme, in described step (3), the method for deposition electroforming conductive layer is ion beam sputter depositing method, and in described ion beam sputter depositing method, cavity vacuum tightness is 1.0 × 10
-3～1.3 × 10
-3pa, ion beam line is 70～80mA, and sedimentation time is 10～15 minutes, and electroforming conductive layer deposition thickness is 100～200 nanometers.
As the preferred implementation of technique scheme, in described step (4), the metal of electroforming is nickel, and electroforming current density is 1A/dm
2, the pH value of electroforming environment is 4.7～5.2, the electroforming time is 10 hours.
As the preferred implementation of technique scheme, in described step (5), the glass temperature that the heating-up temperature of described hot padding is polymer plate, pressure is 1-10KN.
As the preferred implementation of technique scheme, in described step (1), substrate is silicon chip, and in described step (5), polymer plate is PMMA sheet material.
The present invention has the following advantages compared to existing technology:
The invention provides a kind of method for making based on MEMS high precision dot light guide plate, the method is utilized Photoresist reflow technology, micro-electroforming process and hot press printing technology, prepared light guide plate precision is high, surface smoothness is high, has overcome the low defects of the existing precision of method for making such as existing serigraphy or laser boring.Meanwhile, this method for making technical maturity, be easy to control, cost is low.And effectively having guaranteed the consistance of physical dimension between light guide plate mesh point and site, is that light conducting board processing method is effectively expanded.
Accompanying drawing explanation
Fig. 1 is method for making schematic flow sheet of the present invention.
Fig. 2 is the preliminary pictorial diagram in photoresist site in the present invention.
Fig. 3 is photoresist lattice point structure schematic diagram in the present invention.
Fig. 4 deposits electroforming conductive layer schematic diagram in the present invention.
Fig. 5 is electroforming light guide plate mesh point impressing mould schematic diagram in the present invention.
Fig. 6 is light guide plate mesh point impressing mould structural representation in the present invention.
Fig. 7 is that in the present invention, thermal imprint process is made light guide plate schematic diagram.
Embodiment
Below embodiments of the invention are elaborated, the present embodiment is implemented under take technical solution of the present invention as prerequisite, provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
Referring to Fig. 1 to Fig. 7, the method for making based on MEMS high precision dot light guide plate that the present embodiment provides, comprises the following steps:
(1), make the preliminary figure 2 in required photoresist site
First, choose substrate, the present embodiment preferred substrate is a slice silicon chip 1, is placed in acetone soln ultrasonic cleaning 5 minutes, the remaining acetone of deionized water rinsing, nitrogen dries up, then be placed in alcoholic solution ultrasonic cleaning 5 minutes, deionized water rinsing residual alcohol, nitrogen dries up, be placed in deionized water for ultrasonic again and clean 5 minutes, nitrogen dries up; Then silicon chip 1 is placed on the hot platform of 150 ℃ and toasts 20-30 minute, remove the steam in cleaning process, and naturally cool to room temperature, complete the pre-service of silicon chip 1;
Then, at the surperficial spin coating one deck of silicon chip 1 photoresist, the photoresist that the present embodiment is chosen is AZP4400 photoresist, and gluing rotating speed is 500～2000 revolutions per seconds, can obtain as required the photoresist of various thickness, and the photoresist thickness applying in the present embodiment is 5 microns; And photoresist is placed in to the upper baking of 100 Du Retai 5～10 minutes together with silicon chip;
Finally, utilize ultraviolet photolithographic technology to expose to applying baking photoresist later, it is the i line passage contact exposure of 436 nanometers that exposure can adopt wavelength, and exposure dose is 100mJ/cm
2, the time shutter is 60～90 seconds, then the photoresist after exposure is placed in to TAMH developer for positive photoresist, development 45-120 second, can obtain the preliminary figure 2 in photoresist site as shown in Figure 2.
(2), adopt technique of backflow to make required photoresist lattice point structure 21
First, the preliminary figure 2 in photoresist site that step (1) is obtained is placed in baking oven together with silicon chip 1, oven temperature slowly rises to the glass temperature of photoresist from room temperature, the speed heating up is 5 ℃/min, under glass temperature, be incubated after 30 minutes, speed with 5 ℃/min cools to room temperature, makes the preliminary figure 2 in photoresist site form required photoresist lattice point structure 21, as shown in Figure 3.
(3), deposition electroforming conductive layer 3
The photoresist lattice point structure 21 surface deposition one deck electroforming conductive layers 3 that form in step (2) by ion beam sputter depositing method, electroforming conductive layer 3 can be metallic gold, in ion beam sputter depositing method, cavity vacuum tightness is 1.0 × 10
-3～1.3 × 10
-3pa, ion beam line is 70～80mA, and sedimentation time is 10～15 minutes, and electroforming conductive layer 3 deposit thickness are 100～200 nanometers, after having deposited, obtain the electroforming conductive layer 3 as sacrificial metal layer as shown in Figure 4.
(4) electroforming light guide plate mesh point impressing mould 4
First, on electroforming conductive layer 3 surfaces, utilize the method electroforming metal nickel of electroforming, thickness reaches 5 millimeters, and electroforming current density is 1A/dm
2, the pH value of electroforming environment is 4.7～5.2, the electroforming time is 10 hours, and after electroforming process, the demoulding, obtaining material is the light guide plate mesh point impressing mould 4 of metallic nickel, as shown in Figure 5, Figure 6.
(5) thermal imprint process is made light guide plate 5
First, select PMMA sheet material as polymer plate, the glass temperature 105 that is heated PMMA is spent, then utilize light guide plate mesh point impressing mould 4 and the laminating of PMMA sheet material, and the 1-10KN that exerts pressure, retention time 30s, then reduces the temperature to room temperature, after the demoulding, directly obtain the light guide plate 5 with lattice point structure 51, as shown in Figure 7.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. the method for making based on MEMS high precision dot light guide plate, is characterized in that, comprises the steps:
(1) make the required preliminary figure in photoresist site: in the pretreated substrate top surface of process, spin coating one deck photoresist, remove the solvent of photoresist inside through baking, naturally cool to after room temperature, adopt ultraviolet photolithographic technology to expose to photoresist, then develop, after drying up, obtain the required preliminary figure in photoresist site;
(2) adopt technique of backflow to make required photoresist lattice point structure: the preliminary figure in photoresist site that step (1) is obtained is placed in baking oven together with substrate, oven temperature slowly rises to the glass temperature of photoresist from room temperature, keep after a period of time, oven temperature is cooled to room temperature, makes the preliminary figure in photoresist site form required photoresist lattice point structure;
(3) deposition electroforming conductive layer: the photoresist lattice point structure surface deposition one deck electroforming conductive layer forming in step (2);
(4) electroforming light guide plate mesh point impressing mould: the photoresist lattice point structure with electroforming conductive layer that step (3) is obtained, as mother matrix, is placed in electroforming apparatus, by electroforming process, mother matrix is copied, and obtains light guide plate mesh point impressing mould after the demoulding;
(5) thermal imprint process is made light guide plate: utilize the light guide plate mesh point impressing mould of gained in step (4), polymer plate is carried out to hot padding, directly obtain the light guide plate with lattice point structure after the demoulding.
2. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, is characterized in that, in described step (1), the spin coating rotating speed of photoresist is 500～2000 revolutions per seconds.
3. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, is characterized in that, in described step (1) ultraviolet photolithographic process, the exposure dose that photoresist is exposed is 100mJ/cm
2, the time shutter is 60～90 seconds; Subsequently, the photoresist after exposure is placed in to TMAH developer for positive photoresist, development time is 45-120 second, then dries up.
4. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, it is characterized in that, in described step (1), the pre-service of substrate comprises following operating process: first use acetone ultrasonic cleaning 5 minutes, dry up, use again alcohol ultrasonic cleaning 5 minutes, dry up, finally use deionized water ultrasonic cleaning 5 minutes, dry up; Then the temperature that substrate is placed in to 150 ℃ is toasted 20-30 minute, to remove the steam in cleaning process, and naturally cools to room temperature.
5. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, is characterized in that, in described step (1), the temperature of after spin coating photoresist, photoresist being toasted is 100 degree, and the time is 5-10 minute.
6. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, it is characterized in that, in described step (2), baking oven is vacuum drying oven, the temperature of described vacuum drying oven is slowly raised to glass temperature from room temperature, heating rate is 5 ℃/min, is incubated after 30 minutes under glass temperature, cools to room temperature with the speed of 5 ℃/min.
7. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, it is characterized in that, in described step (3), the method for deposition electroforming conductive layer is ion beam sputter depositing method, and in described ion beam sputter depositing method, cavity vacuum tightness is 1.0 × 10
-3～1.3 × 10
-3pa, ion beam line is 70～80mA, and sedimentation time is 10～15 minutes, and electroforming conductive layer deposition thickness is 100～200 nanometers.
8. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, is characterized in that, in described step (4), the metal of electroforming is nickel, and electroforming current density is 1A/dm
2, the pH value of electroforming environment is 4.7～5.2, the electroforming time is 10 hours.
9. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, is characterized in that, in described step (5), and the glass temperature that the heating-up temperature of described hot padding is polymer plate, pressure is 1-10KN.
10. a kind of method for making based on MEMS high precision dot light guide plate as claimed in claim 1, is characterized in that, in described step (1), substrate is silicon chip, and in described step (5), polymer plate is PMMA sheet material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410091008.3A CN103809236A (en) | 2014-03-12 | 2014-03-12 | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410091008.3A CN103809236A (en) | 2014-03-12 | 2014-03-12 | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103809236A true CN103809236A (en) | 2014-05-21 |
Family
ID=50706275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410091008.3A Pending CN103809236A (en) | 2014-03-12 | 2014-03-12 | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103809236A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105632981A (en) * | 2016-03-19 | 2016-06-01 | 复旦大学 | Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment |
| CN105789044A (en) * | 2016-03-19 | 2016-07-20 | 复旦大学 | Method for reducing surface roughness of micro-electronic device by thermal treatment |
| CN106166649A (en) * | 2016-07-22 | 2016-11-30 | 江苏大学 | The laser light conducting board processing method of a kind of high evenness and device |
| CN106476260A (en) * | 2015-08-31 | 2017-03-08 | 伊英克加利福尼亚有限责任公司 | Knurling tool and preparation method thereof |
| CN111169056A (en) * | 2018-11-12 | 2020-05-19 | 苏州维业达触控科技有限公司 | Method for manufacturing anti-dazzle diffusion film |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017218A (en) * | 2007-02-14 | 2007-08-15 | 苏州大学 | Photoconductive coating film of diffraction grating and manufacture method thereof |
| US20080050851A1 (en) * | 2006-08-24 | 2008-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Display Device |
-
2014
- 2014-03-12 CN CN201410091008.3A patent/CN103809236A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080050851A1 (en) * | 2006-08-24 | 2008-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for Manufacturing Display Device |
| CN101017218A (en) * | 2007-02-14 | 2007-08-15 | 苏州大学 | Photoconductive coating film of diffraction grating and manufacture method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 谢伟信: "运用非接触式气压微压印导光板之研究", 《国立台湾海洋大学硕士学位论文》 * |
| 黄皇齐: "应用UV-LIGA于导光板模仁之制作研究", 《国立高雄应用科技大学硕士学位论文》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106476260A (en) * | 2015-08-31 | 2017-03-08 | 伊英克加利福尼亚有限责任公司 | Knurling tool and preparation method thereof |
| CN106476260B (en) * | 2015-08-31 | 2020-03-06 | 伊英克加利福尼亚有限责任公司 | Embossing tool and method for making same |
| CN105632981A (en) * | 2016-03-19 | 2016-06-01 | 复旦大学 | Instrument for reducing surface roughness of microelectronic device by utilizing heat treatment |
| CN105789044A (en) * | 2016-03-19 | 2016-07-20 | 复旦大学 | Method for reducing surface roughness of micro-electronic device by thermal treatment |
| CN106166649A (en) * | 2016-07-22 | 2016-11-30 | 江苏大学 | The laser light conducting board processing method of a kind of high evenness and device |
| CN111169056A (en) * | 2018-11-12 | 2020-05-19 | 苏州维业达触控科技有限公司 | Method for manufacturing anti-dazzle diffusion film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103809236A (en) | Manufacture method for high precision mesh point light guide plate based on MEMS (micro electro mechanical systems) | |
| CN103353627B (en) | Manufacturing method of micro lens array mold | |
| CN107415511B (en) | Method for directly transferring mold texture or pattern onto toughened glass | |
| CN103472682B (en) | Based on the method that mask lithography technology and injection mo(u)lding make diffractive micro-optical element | |
| JP2006337985A (en) | Method of manufacturing high sag lens and lens manufactured by using the same method | |
| CN103592721B (en) | A kind of manufacture method of all-polymer plane optical path | |
| CN104849783A (en) | Visible and near infrared light absorber based on nanoimprint lithography process and processing method thereof | |
| WO2022041675A1 (en) | Preparation method for ar diffractive waveguide imprint mold, soft mold and use thereof | |
| KR20210079192A (en) | Method for manufacturing a horological component and component obtained according to this method | |
| CN113484945A (en) | Method for manufacturing variable linear density grating based on PDMS/PUA mutual copying | |
| CN105858591B (en) | A kind of metal micro structure and preparation method thereof | |
| CN110703373A (en) | Method for manufacturing precise metal reflection grating | |
| KR102532840B1 (en) | Method for manufacturing a horological component and component produced according to said method | |
| CN104807485A (en) | Novel resin code disc production process | |
| US20030209819A1 (en) | Process for making micro-optical elements from a gray scale etched master mold | |
| JP2021096249A (en) | Method of manufacturing timepiece component and component produced using the same | |
| US7344990B2 (en) | Method of manufacturing micro-structure element by utilizing molding glass | |
| CN204575880U (en) | A kind of based on the visible of nano-imprint process and near-infrared absorption body | |
| JP2008230083A (en) | Stamper manufacturing method | |
| CN202583691U (en) | Nickel alloy light guide plate mold kernel | |
| CN101169589B (en) | Method for manufacturing light guide plate cavity | |
| JP2008290357A (en) | Method for manufacturing microlens array | |
| TWI345656B (en) | Method of manufacturing master of light-guide plates | |
| KR20060118949A (en) | Fabrication method of micro lens array and stamper for duplicating micro lens array | |
| JP2007101567A (en) | Manufacturing method of stamper for manufacturing light transmission plate and manufacturing method of light transmission plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140521 |