CN105473770B - A kind of electroplanting device and sensing device - Google Patents

A kind of electroplanting device and sensing device Download PDF

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Publication number
CN105473770B
CN105473770B CN201480045566.4A CN201480045566A CN105473770B CN 105473770 B CN105473770 B CN 105473770B CN 201480045566 A CN201480045566 A CN 201480045566A CN 105473770 B CN105473770 B CN 105473770B
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anode
conductive layer
layer
side conductive
component
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CN105473770A (en
Inventor
山本渡
小岩仁子
本间敬之
柳沢雅広
齐藤美纪子
山本智之
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YAMAMOTO GOLD PLATING TESTER CO Ltd
Waseda University
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YAMAMOTO GOLD PLATING TESTER CO Ltd
Waseda University
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1619Apparatus for electroless plating
    • C23C18/1628Specific elements or parts of the apparatus
    • C23C18/163Supporting devices for articles to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1675Process conditions
    • C23C18/1683Control of electrolyte composition, e.g. measurement, adjustment
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002Cell separation, e.g. membranes, diaphragms
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/004Sealing devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/008Current shielding devices
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06Suspending or supporting devices for articles to be coated
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10Electrodes, e.g. composition, counter electrode
    • C25D17/12Shape or form
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00Processes for servicing or operating cells for electrolytic coating
    • C25D21/12Process control or regulation

Abstract

A kind of electroplanting device (1) includes:One fixed component (2), fixed plating object (W);One pad (4), it is stacked in by annular the first seal member (3) for being surrounded on plating object (W) in fixed component (2), and include one through part (45), expose plating object through part and store electroplate liquid;And an anode component (6), by being stacked in around the one second annular seal member (3) through part (45) on pad (4), and comprising an anode layer (62), just to being exposed on the plating object (W) run through under part (45).

Description

A kind of electroplanting device and sensing device
Technical field
It is applied to carry out the electroplanting device of electrolysis plating or chemical plating on plating object surface the present invention relates to a kind of, and Use a kind of sensing device of same apparatus.
Background technology
These years recently, a kind of electroplating technology has been applied to various technical fields, such as a kind of semiconductor wires technology. Further, in order to determine plating conditions when producing electroplated product, electric degree test may be performed before the start of production, for example Use a kind of electroplanting device of small size.
For example, documents 1 disclose a kind of plating test device, including:At least have a substrate and a side plate and It is injected with a container of electroplate liquid;And minus plate and a positive plate, horizontal positioned is with mutual in the electroplate liquid in container Alignment, wherein, it is arranged on as the minus plate and one of them of positive plate of plating object below another, the side of container An opening is formed with liner plate, for respectively inserting minus plate and positive plate in container, and is removably provided with container A cover plate for covering opening.The side plate of container include multiple grooves, for accommodate in parastate minus plate and At least one block plate in positive plate, to adjust the raceway groove between minus plate and positive plate.
Prior art literature
Patent document
Documents 1:Japanese Unexamined Patent Publication No 2006-299367 (claim 1-3, Fig. 1)
The content of the invention
Problems to be solved by the invention
But, the electroplanting device described in documents 1 needs to be provided with opening and groove in the side plate of container, with And accommodating the container of minus plate and positive plate so that physical dimension is greater and more complicated, and manufacturing cost and material cost are therefore And improve.It is therefore desirable to a kind of more simple and more compact electroplanting device.
Moreover, with continuous research and development in recent years to plating object, it is necessary to which a kind of electroplanting device, can electroplated During observe plating object production process, such as with high-performance microscope (such as Raman microscope).
The present invention design regarding to the issue above, and as a main subject there is provided it is a kind of more simply and can more hold Easy is manufactured into than electroplanting device smaller in the past, and uses the sensing device of this device.
Further, as a secondary subject, the invention provides a kind of electroplanting device, plating object can be observed Production process.
The means solved the problems, such as
In order to solve the above problems, a kind of electroplanting device of the invention includes:One fixed component (2), for fixing conduct A plating object (W) for negative electrode;One pad (4), is stacked in fixed component (2) by the first seal member (3), and with annular Shape includes exposed plating object and stores the one of electroplate liquid and run through part (45) around plating object (W);And one sun Pole part (6), is stacked on pad (4) by one second seal member (5), and is surround with annular shape through part (45), And include the anode layer (62) just to being exposed on the plating object (W) run through under part (45).
According to this structure, electroplanting device (1) can be simply formed readily by the following method:Stack fixed component (2) to fix plating object (W), then by the first seal member (3) stack using part (45) is run through to store electroplate liquid Pad (4) and the anode component (6) that an anode is included by the second seal member (5) stacking.So, electroplanting device (1) with it is right Than the electroplanting device described in file 1 compared to simpler and smaller, such as, baroque container in documents 1 It is unnecessary.Further, in the present invention, the distance between anode and negative electrode can be readily by changing different-thickness Pad (4) adjust.
Further, pad (4) includes a gasket body (41), and gasket body is made up of an insulating barrier, and an anode-side Conductive layer (43), pole side conductive layer is arranged at the surface of gasket body (41), and just to anode component (6), anode component (6) includes One anode component main body (61), anode component main body is made up of insulating barrier, and one as anode anode layer (62), anode is molten Layer is arranged on the surface of anode component main body (61), just to pad (4), anode side conductive layer (43) and the second seal member (5) internal anode layer (62) connection, and anode side conductive layer (43) power supply (PW) outside with the second seal member (5) is even Connect.
According to this structure, anode side conductive layer (43) anode layer (62) internal with the second seal member (5) is connected, And anode side conductive layer (43) power supply (PW) outside with the second seal member (5) is connected, this can give anode layer (62) When electric energy is provided, the sealing between pad (4) and anode component (6) is kept.
Further, anode component main body (61) preferably includes an optical transport window (64), is passed through for observing to be exposed to The plating object (W) of part (45) is worn, and anode layer (62) is preferably formed around window (64).
The structure can be observed by window (64) in electroplating process and result from coating on plating object (W) in itself.
Further, window (64) preferably has a thickness of the other parts less than anode component main body (61) (t1)。
This structure, for example, the microscope for being observed closer to negative electrode can be set.Therefore, in plating During, plating object (W) can be observed suitably.
It is further preferred that the scope of the thickness (t1) of window (64) is 0.05mm≤t1≤2mm.
Because the structure can suitably limit plating pair in the refraction and scattering of the light through window (64), electroplating process As (W) can be observed suitably in a certain state, the influence that window (64) is caused under the state is reduced.
It is further preferred that anode component main body (61) oriented inclined cone in window (64) direction around window (64) Shape part (64a).
According to the structure, anode component main body (61) has circular window (64) and to window (64) inclined conical section (64a), this prevents microscope (M) from being contacted with anode component (6), for example, be used to observation plating object (W) in microscope (M) When.
It is further preferred that the scope of the thickness (t2) of pad (4) is 0.05mm≤t2≤1mm.
According to the structure, thickness (depth) very little for the electroplate liquid being stored in part (45), even if to ensure electricity Plating solution, which is colored, can also observe plating object (W).Further, by being significantly reduced interelectrode distance, can obtain from The precipitous diffusion gradient of sub- concentration.
Also, it is preferred that, pad (4) includes the cathode side conductive layer (42) for being arranged at gasket body (41) surface, just To fixed component (2), cathode side conductive layer (42) plating object (W) internal with the first seal member (3) is connected, and cathode side Conductive layer (42) power supply (PW) outside with the first seal member (3) is connected.
The structure can provide electric energy for plating object (W), while being maintained between pad (4) and fixed component (2) Sealing.
It is further preferred that pad (4) includes and anode side conductive layer (43) insulation on the surface of gasket body (41) One reference electrode conductive layer (44), just to anode component (6), preferably anode component (6) includes the table with gasket body (61) A reference electrode layer (63) for anode layer (62) insulation on face, just to pad (4), reference electrode conductive layer (44) and second Internal reference electrode layer (63) connection of seal member (5), and reference electrode conductive layer (44) and the second seal member (5) are outside Detection device connection.
According to the structure, the potential of anode can be measured by reference to electrode layer (63), while pad (4) and anode component (6) sealing can be kept.
It is further preferred that fixed component (2) or anode component (6) include an electroplate liquid service duct (27), electroplate liquid It is provided to by the passage through part (45), and preferably, fixed component (2) or anode component (6) include a plating Liquid discharge-channel (28), electroplate liquid is released by the passage from through part (45).
The structure causes the electroplate liquid run through in part (45) to be suitably maintained, and method is from electroplate liquid service duct (27) give and provide electroplate liquid through part (45), and it from through part (45) is emitted into plating liquid discharge passage (28).
Moreover, in the case where electroplate liquid is chemical plating fluid, preferably detection device rather than power supply (PW) are connected, To detect the potential between anode and negative electrode.
The structure causes the electroplanting device (1) of the present invention applied chemistry plating and can detect the electricity between anode and negative electrode Gesture.
Moreover, the invention provides a kind of sensing device using above-mentioned electroplanting device (1), wherein, anode side conductive layer (43) be made up of the anode side conductive layer (43B) of multiple mutually insulateds, anode layer (62) by identical quantity mutually insulated Anode layer (62B) is constituted, and is used as anode side conductive layer (43B), and the anode layer being exposed under part (45) The various pieces (62Bb) of (62B) are modified by different reactive groups respectively.
The structure causes electroplanting device (1) to be used as a kind of sensing device, for example, by by different reactions Base is changed to multiple anode layers (62B).
Invention effect
The invention provides a kind of simpler and be easier to be fabricated to than electroplanting device smaller in the past, and use The sensing device of same apparatus.Further, the present invention can provide a kind of electroplanting device, can observe the production of plating object Process.
Brief description of the drawings
Fig. 1 is the perspective view of the electroplanting device according to one embodiment;
Fig. 2 is the decomposition diagram of the electroplanting device according to one embodiment;
Fig. 3 is the view sub-anatomy along III-III line in Fig. 1;
Fig. 4 is the view sub-anatomy along IV-IV lines in Fig. 1;
Fig. 5 is the sectional arrangement drawing along III-III line in Fig. 1;
Fig. 6 A are the plans of fixed component, and Fig. 6 B are the sectional views along VIb-VIb lines in Fig. 6 A;
Fig. 7 A are the plans of pad, and Fig. 7 B are the bottom views of pad;Fig. 7 C are the top views of pad;
Fig. 8 A are the plans of anode component, and Fig. 8 B are the sectional views along VIIIb-VIIIb lines in Fig. 8 B, and Fig. 8 C are anodes The bottom view of part.
Fig. 9 is the view sub-anatomy of the electroplanting device according to second embodiment;
Figure 10 be using electroplanting device sensing device in pad plan;And
Figure 11 be using electroplanting device sensing device in anode component bottom view.
Reference:
1:Electroplanting device
2:Fixed component
27:Electroplate liquid service duct
28:Plating liquid discharge passage
3:First seal member
4:Pad
41:Gasket body
42:Cathode side conductive layer
43:Anode side conductive layer
44:Reference electrode conductive layer
45:Through part
5:Second seal member
6:Anode component
61:Anode component main body
62:Anode layer
63:Reference electrode layer
64:Window
7:Cathode side conductive component
8:Insulating element
9:Anode side conductive part
P:Probe
PW:Power supply
W:Plating object.
Embodiment
One embodiment of the present invention is described in detail referring next to accompanying drawing.There is provided will in one embodiment Example of the electrolysis plating applied to plating object (W).It is emphasized that direction be shown based on arrow in Fig. 1 " it is preceding- Afterwards ", the direction of " previous-next " " L-R " is described.
It is a kind of thin electroplanting device according to the electroplanting device 1 of one embodiment, is formed by simple stacked structure.Electricity One advantage of plating appts 1 is can to observe anti-at the manufacture of plating object in electroplating process and liquid/solid interface Should, for example observed using a special microscope, such as Raman microscope.
As depicted in figs. 1 and 2, electroplanting device 1 is that, for electroplating the device by plating object W, critical piece includes one and consolidated Part 2a, one first seal member 3, a pad 4, one second seal member 5 and an anode component 6 are determined, sequentially for from top to bottom. Further, electroplanting device 1 includes the insulating element 8 below a cathode side conductive component 7 and fixed component 2.Further, Electroplanting device 1 includes the anode side conductive part 9 for being located at the top of anode component 6.
As Fig. 2 is shown, plating object W is the object for electroplating application in the above, and by for example in plan view, it is square Thin electroplating part formed.Plating object W not has a special limitation, and can be various electronic units, such as circuit board, partly leads Body chip and equipment bag.Also, plating object W can also be a kind of test block, such as is made up of simple metal plate.As shown in Fig. 3 Show, in one embodiment, plating object W includes a dielectric substrate W1 and the electrodeposited coating being stacked on dielectric substrate W1 W2.Electrodeposited coating W2 is connected to be used as negative electrode with power supply PW negative pole.
Such as Fig. 1-6B displays (especially Fig. 6 A and Fig. 6 B), fixed component 2 is the part for fixing plating object W.Lift For example, fixed component 2 is formed by insulator, for example PEEK resins (polyether-ether-ketone).In plan view, fixed component 2 includes The side wall 22 that one rectangular base plate 21 and four sides from bottom plate 21 are upwardly extended.As depicted in figs. 1 and 2, the sky that side wall 22 is surrounded Between accommodate plating object W, the first seal member 3, pad 4, the second seal member 5 and anode component 6.
For installing the core that plating object W groove 23 is formed at the upper surface of bottom plate 21.Further, it is used for The annular raceway groove 24 for installing the first seal member 3 is formed at the upper surface of bottom plate 21, to surround groove 23.Further, bottom Plate 21 includes, multiple probe patchholes 25 (quantity is eight in one embodiment) outside raceway groove 24, for inserting Probe P, probe can subsequent descriptions.
Further, bottom plate 21 includes electroplate liquid service duct 27, and it runs through part by the one of the pads 4 of subsequent descriptions 45 provide electroplate liquid, and plating liquid discharge passage 28, by discharging electroplate liquid through part 45.In one embodiment, It is formed at positioned at an opening 27a of the entrance side of electroplate liquid service duct 27 from the prominent cylinder 27c ends in the right side of bottom plate 21, position The upper surface of bottom plate 21, and the ring on the front side of groove 23 are formed in an opening 27b of the outlet side of electroplate liquid service duct 27 The inside of shape raceway groove 24.An opening 28a positioned at the porch of plating liquid discharge passage 28 is formed at the upper surface of bottom plate 21, with And the inside of the annular channel 24 on the rear side of groove 23, the opening 28b positioned at the outlet side of plating liquid discharge passage 28 formed In the cylinder 28c ends protruded from the left side of bottom plate 21.Cylinder 27c, 28c are covered by lid 27d, 28d respectively.Lid 27d, 28d It can prevent the electroplate liquid mozzle (not shown) being connected with cylinder 27c, 28c from coming off.
Such as Fig. 2-5 displays, the first seal member 3 is elastomeric element, close for being carried out between fixed component 2 and pad 4 Envelope, and by annular O ring groups into for example in plan view.First seal member 3 is installed in the raceway groove 24 of bottom plate 21. First seal member 3 is set around plating object W.First seal member 3 is also set around pad 4 (being subsequently described) Through part 45.
As shown in Fig. 2-5 and Fig. 7 A, Fig. 7 B (especially Fig. 7 A, Fig. 7 B), pad 4 be maintain plating object W and anode (after It is continuous to be described) between pre-determined distance part.In one embodiment, for example, pad 4 is by square sheet material Formed.Pad 4 include insulator composition a gasket body 41, a cathode side conductive layer 42, cathode side conductive layer set In on the surface of gasket body 41, just to fixed component 2, anode side conductive layer 43 and a reference electrode conductive layer 44, with reference to electricity Pole conductive layer is arranged at the surface of gasket body 41, just to anode component 6, and is formed at the core of pad 4 and runs through Part 45.
Gasket body 41 is to make cathode side conductive layer 42 and the part of the insulation of anode side conductive layer 43, can be exhausted by such as one Edge body is formed, for example Pyrex.
Cathode side conductive layer 42 is to provide conductive layer of the electric energy to plating object W, can be formed by a such as metal material, Such as platinum.Cathode side conductive layer 42 is formed for example, by the technology of cathode vacuum spraying plating or vacuum evaporation.Cathode side is conductive Layer 42 is connected to the plating object W inside the first seal member 3, and is connected to first by probe P and cathode side conductive component 7 (see Fig. 1 and Fig. 5) on the negative pole of power supply PW outside seal member 3.
Anode side conductive layer 43 is to provide conductive layer of the electric energy to anode layer 62 (being subsequently described), can be by such as one Metal material is formed, for example platinum.Anode side conductive layer 43 is formed for example, by the technology of cathode vacuum spraying plating or vacuum evaporation 's.Anode side conductive layer 43 is connected to the anode layer 62 (being subsequently described) inside the second seal member 5, and passes through probe P (see Fig. 1 and Fig. 5) on the positive pole for the power supply PW being connected to cathode side conductive component 9 outside the second seal member 5.
Reference electrode conductive layer 44 is the conductive layer for being electrically connected in reference electrode layer 63 (being subsequently described), can be by example A such as metal material is formed, such as platinum.Reference electrode conductive layer 44 is the skill for example, by cathode vacuum spraying plating or vacuum evaporation Art formation.The part for not having conductive layer is provided to the both sides of reference electrode conductive layer 44 (more particularly, positioned at reference to electricity Between pole conductive layer 44 and anode side conductive layer 43), and insulated with anode side conductive layer 43.Reference electrode conductive layer 44 and second Reference electrode layer 63 (being subsequently described) connection inside seal member 5, and pass through probe P (being subsequently described) and the second sealing Detection device (not shown) connection outside part 5.
It is to make an opening of plating object W exposures through part 45, and the electroplate liquid that is stored with, it is substantially formed at pad 4 On the previous-next direction of core.In plan view, through the shape substantially rhomboid of part 45, wherein fore-and-aft direction Length it is longer than the length of left and right directions.Opening 27b in the outlet side of electroplate liquid service duct 27, which is exposed on, to be close in End section through the front side of part 45 (see Fig. 2).Opening 28a in the entrance side of plating liquid discharge passage 28 is also exposed on It is close in the end section through the rear side of part 45 (see Fig. 2).Therefore, from opening 27b flow into through part 45 electroplate liquid from Front portion flows into rear portion and entered through part 45, is finally flowed out from opening 28a.
The t2 of pad 4 thickness is not limited only to, it is preferred that scope is 0.05mm≤t2≤1mm, more preferably model It is 0.10mm≤t2≤0.20mm to enclose.In one embodiment, pad 4 has about 0.10mm thickness t2.Allow the thickness of pad 4 Degree t2 is thinning to be allowed to observe plating object W by window 64 (being subsequently described), even when electroplate liquid is not very transparent Wait.
It is emphasized that the multiple different pads 4 for having different-thickness t2 can on request be prepared in advance before exchange.Lift For example, if electroplate liquid is very transparent, the pad 4 for having relatively thicker degree t2 can be used.In one embodiment, The pad 4 for having very thin about 0.1mm thickness t2 causes the reaction of observation solid/liquid interfaces specifically.
Such as Fig. 2-5 displays, the second seal member 5 is elastomeric element, close for being carried out between pad 4 and anode component 6 Envelope, and formed by the O rings of annular, such as in a plane.Second seal member 5 is installed in shape in the lower surface of anode component 6 Into raceway groove 65 in.What the second seal member 5 was also arranged to surround pad 4 runs through part 45.In addition, the second seal member 5 It is also arranged to surround the window 64 of anode component 6.
As shown in Fig. 1-5 and Fig. 8 A-8C (especially, Fig. 8 A-8C), anode component 6 mainly includes:One anode component main body 61;Anode layer 62 and the reference electrode layer 63 positioned at the surface of anode component main body 61, reference electrode layer 63 is just to fixed component 2;It is formed at the window 64 of the core of anode component main body 61;And it is formed at the raceway groove 65 on the surface of anode component main body 61, Just to fixed component 2.The pad 4 covered from above of anode component 6 run through part 45.
Anode component main body 61 is sheet component, is in plan view rectangle.Anode component main body 61 is by insulating materials structure Into for example transparent (light guide) quartz glass.
Anode layer 62 is an anode part, is electrically connected with power supply PW positive pole, is formed at window 64 and subsequent descriptions The surface of anode component main body 61 raceway groove 65 between, just to fixed component 2.That is to say, anode layer 62 is around window 64 Surrounding is formed.Anode layer 62, for example, formed by metal material such as platinum.Anode layer 62 is for example, by negative electrode The technology formation of vacuum evaporating or vacuum evaporation.Anode side conductive layer 43 in the seal member 5 of anode layer 62 and second connects Connect.
Reference electrode layer 63 is a part for the reference electrode being electrically connected with detection device (not shown).Reference electrode layer 63 are arranged on the position just to reference electrode conductive layer 44.Reference electrode layer 63, for example, be by metal material such as platinum Formed.Reference electrode layer 63 is formed for example, by the technology of cathode vacuum spraying plating or vacuum evaporation.There is no conductive layer Part be provided to reference electrode layer 63 both sides (more particularly, positioned at reference electrode layer 63 and anode side conductive layer 62 it Between), and insulated with anode-side layer 62.Reference electrode layer 63 is connected with the reference electrode conductive layer 44 in the second seal member 5.Ginseng Examining electrode layer 63 causes the potential of detection anode (anode layer 62) as working electrode.
Window 64 is a kind of transparent observing window, for observing (or monitoring) plating object W.Window 64 is arranged on anode The core of article body 61, is shaped as circle in plan view.Window 64 is made up of quartz glass, for example, with sun The material of pole article body 61 is identical.Other parts (such as anode components of the thickness t1 of window 64 than anode component main body 61 The peripheral rim portion of main body 61) it is thinner.The thickness t1 preferably scopes of window 64 are 0.05mm≤t1≤2mm, more preferably model It is 0.10mm≤t1≤0.20mm to enclose.In one embodiment, window 64 has about 0.13mm thickness t1.Make thickness t1 poles That holds is thin so that when plating object is by microscopical observation, it is possible to decrease the refraction and scattering of the light transmitted by window 64, To allow accurately to observe plating object.
The conical section 64a of truncated cone shape is arranged at around window 64, and part 64a is tilted to the direction of window 64.When micro- When mirror is arranged on window 64, conical section 64a reduces the interference between microscope and anode component main body 61.In other words Say, the conical section 64a around window 64 allows larger-sized microscope closer to window 64.
Raceway groove 65 is the groove of annular, for installing the second seal member 5, and is formed at the following table of anode component main body 61 On face.Raceway groove 65 is formed around the surrounding of window 64.Raceway groove 65 reduces the displacement of the second seal member 5, and it is molten to promote anode Layer 62 contacts anode side conductive layer 43.
Further, anode component 6 includes multiple probe patchholes 66 (quantity is eight in one embodiment), is located at Outside raceway groove 65, for inserting probe P (being subsequently described).One of probe patchhole 66A is conductive corresponding to reference electrode Formed on the position of layer 44 (see Fig. 7 A).
As Figure 1-5, it is to provide part of the electric current to plating object W as the cathode side conductive component 7 of negative electrode.Negative electrode Side conductive component 7 is made up of plan view shape for the metallic plate of rectangle, is stacked in the downside of fixed component 2.Cathode side conductive part Part 7 has multiple probe installing holes 71, and probe P is installed by this some holes respectively.Further, cathode side conductive component 7 by The projection 72 of left surface protrusion is connected with the negative pole of power supply PW (not shown)s.Therefore, power supply PW negative pole is conductive by cathode side Part 7, probe P and cathode side conductive layer 42 are electrically connected with plating object W.
Insulating element 8 is the portion for surface (such as substrate) insulation for making cathode side conductive component 7 be placed with electroplanting device 1 Part.Insulating element 8 is made up of insulating materials, for example PEEK resins (polyether-ether-ketone).Insulating element 8 is square by plan view shape Metallic plate constitute, and the lower surface of covered cathode side conductive component 7.
Anode side conductive part 9 is to provide part of the electric current to anode layer 62.Anode side conductive part 9 is by planar graph Shape is constituted for the metallic plate of annular, is stacked in the upside of anode component 6.Anode side conductive part 9 has an opening 91 in center, Window 64 is exposed by opening.Anode side conductive part 9 has multiple probe installing holes 92, and probe P is pacified by this some holes respectively Dress.Further, anode side conductive part 9 is connected by the positive pole of the projection 93 and power supply PW (not shown)s protruded from positive side Connect.Therefore, power supply PW positive pole is electric with anode layer 62 by anode side conductive part 9, probe P and anode side conductive layer 43 Connection.
Probe P is metal parts, respectively by cathode side conductive component 7 and cathode side conductive layer 42, anode side conductive part 9 It is electrically connected with anode side conductive layer 43.As shown in figure 3, each probe P includes bottoming out columned cylinder P1, and it is retractable Ground is provided in cylinder P1 plunger P2.Cylinder P1 is suitable for probe installing hole 71, probe installing hole 92, is inserted into probe patchhole 25th, in probe patchhole 66, the state of cathode side conductive layer 42 or anode side conductive layer 43 is directed in plunger P2.Plunger P2 by spring (not shown) deflection on projected direction for being contained in cylinder P1, with cathode side conductive layer 42 or anode Side conductive layer 43 is contacted.
Although it is emphasized that not showing, being arranged at and the corresponding position of reference electrode conductive layer 44 in anode-side Eight probe P in one have a cylinder P1, cylinder insulated body surrounds to insulate with anode side conductive part 9.With reference The corresponding probe P of electrode conducting layer 44 is connected with detection device (not shown), and its plunger P2 and reference electrode conductive layer 44 It is in contact.Reference electrode conductive layer 44 is connected with the reference electrode layer 63 in the second seal member 5.Therefore, reference electrode layer 63 Potential can be measured by monitoring device.
As shown in figure 4, fixed component 2, pad 4, anode component 6, cathode side conductive component 7, insulating element 8 and anode-side Conductive component 9 has multiple bolt-inserting holes 26,46,67,73,81,94 (to be eight in one embodiment, except there was only four The anode side conductive part 9 in hole 94), for inserting bolt B (see Fig. 1), bolt fastens all parts in stacked state.It is interior Spiralization is in for coordinating the interior along surface of the bolt-inserting hole 81 in fixed insulating element 8 with bolt B (see Fig. 1).
It is substantially to be formed by described above according to the electroplanting device 1 of one embodiment.Next, reference picture 1- 8 (especially Fig. 5) describe the purposes and beneficial effect of electroplanting device 1.
As shown in figure 5, electroplanting device 1 in one embodiment include being used for fixing plating object W fixed component 2, With the pad 4 through part 45 and the anode component 6 with anode layer 62, they all pass through the He of the first seal member 3 Second seal member 5 is stacked up.Therefore, when plating object W by through part 45 just to anode layer 62 when, through part 45 allow electroplate liquid to be stored by sealing.So, electroplanting device 1 can be formed readily by simply stacking all parts. Container with labyrinth, for example, need not be compared with the electroplanting device described in documents 1, this causes plating to fill Putting 1 can be simplified and reduce.Further, the electroplanting device 1 in one embodiment can have with pre-prepd Different-thickness t2 multiple pads 4 so that the distance between plating object W and anode layer 62 are adjusted easily by pad is changed Whole, adjustment depends on plating conditions and test condition.
Further, according to the electroplanting device 1 of one embodiment include anode side conductive layer 43, anode side conductive layer with Anode layer 62 inside second seal member 5 is connected, and anode side conductive layer 43 passes through probe P and anode side conductive part 9 are connected with the anode of the power supply PW outside the second seal member 5, and this can provide electric energy to anode layer 62, while keeping pad Sealing between piece 4 and anode component 6..
Further, anode component main body 61 includes a window 64 of light-transfer characteristic, runs through for observing to be exposed to The plating object W of part 45, and anode layer 62 formed around the surrounding of window 64.So, as shown in figure 5, can in electroplating process To observe (or monitoring) plating object W by window 64, such as using Raman microscope M.
Further, in one embodiment, the thickness t1 of window 64 is set to very thin, for example, 0.13mm, This can suitably reduce the refraction and scattering of the light transmitted by window 64, accurate using Raman microscope M observation to improve Exactness.
Again further, anode component 6 includes a conical section 64a, and anode side conductive part 9 includes opening 91, made Raman microscope M for example can avoid interference and draw close to window 64 close to anode component 6 and anode side conductive part 9 Graceful microscope M.
In addition, in one embodiment, the thickness t2 of pad 4 is set to very thin, such as 0.10mm.Therefore, store It is reduced in the thickness (depth) of the electroplate liquid in part 45, in the case of ensureing even if for example electroplate liquid is colored Plating object W can be observed.Further, in one embodiment, the thickness t2 of pad 4 is set extremely thin, about 0.10mm so that the reaction of observation solid/liquid interfaces is specifically.
In addition, being included connecting with the plating object W inside the first seal member 3 according to the electroplanting device 1 of one embodiment The cathode side conductive layer 42 connect, and the cathode side conductive layer being connected by probe P with the power supply PW outside the first seal member 3 42, this can provide electric energy to plating object W, while keeping the sealing between pad 4 and anode component 2.
Being additionally, since fixed component 2 includes providing electroplate liquid to the electroplate liquid service duct 27, Yi Jicong through part 45 The plating liquid discharge passage 28 of electroplate liquid is discharged through part 45, electroplate liquid is supplied to through-Penetration portion by electroplate liquid service duct 27 Part 45, and discharged by plating liquid discharge passage 28 from through part 45, this electroplate liquid for run through in part 45 is kept In appropriate circumstances.
Next, describing the electroplanting device 1A according to second embodiment referring to the drawings 9.In this description, with Identical part is showed by identical reference numeral in one embodiment, and therefore detailed description can be omitted.
As shown in figure 9, according in the electroplanting device 1A main bodys of second embodiment with one embodiment described above Electroplanting device it is different, the direct contact plating object WA of its middle probe P lower surface and pad 4A does not have cathode side conductive layer 42.
The plating object WA that electroplanting device 1A in second embodiment is used is a part, its lower surface (rear end Face) the upper surface (front end face) with being applied to plating be electrically connected, and just to fixed component 2A, and by for example single gold Belong to material to constitute.
Fixed component 2A includes an annular channel 23a, installed above to have plating object WA positioned at the lower surface of groove 23 Interior.Further, insertion probe P probe patchhole 23b is formed in the raceway groove 23a in the bottom surface of groove 23.Need strong What is adjusted is that the cathode side being formed at the probe installing hole 74 that probe P matches on position corresponding with probe patchhole 23b is led In electric part 7.
3rd seal member 10 is arranged between fixed component 2A and plating object WA.3rd seal member 10 is along raceway groove 23a is installed.3rd seal member 10 can maintain to seal between fixed component 2A and plating object WA, to prevent electroplate liquid from passing through Probe patchhole 23b and probe installing hole 74 are spilt.
Pad 4A includes gasket body 41 and anode side conductive layer 43, but not including that cathode side conductive layer 42 (see Fig. 3). Because lower surfaces of the probe P directly with plating object WA is contacted.
In the electroplanting device 1A of second embodiment, probe P is directly contacted with plating object WA lower surface, and pad 4A cathode side conductive layer 42 is eliminated, to simplify the structure of electroplanting device 1.
The present embodiment is described with reference to above-mentioned accompanying drawing, but the present invention is not limited to this, it is any without prejudice to the present invention The amendment of spirit is also should be considered to be encompassed in the present invention.
For example, in one embodiment, window 64 is arranged in anode component 6, but not as to this hair Bright limitation, when being observed without using microscope, window 64 is not set.
Further, in one embodiment, anode component main body 61 and window 64 are made up of (for example identical material Quartz glass), but the present invention is not limited to this, for example, anode component 61 can be by the material different from window 64 Constitute.In the case, window 64 can be made up of light-guide material, and anode component main body 61 can be by opaque material structure Into.
Further, in one embodiment, reference electrode layer 63 is arranged at the lower surface of anode component main body 61, And reference electrode conductive layer 44 is arranged on the surface, the anode component 6 just to pad 4, but the present invention is not limited to this, Reference electrode layer 63 and reference electrode conductive layer 44 can be omitted.
Further, in one embodiment, electroplate liquid service duct 27 and plating liquid discharge passage 28 are formed at In fixed component 2, but the present invention is not limited only to this, for example, electroplate liquid service duct 27 and plating liquid discharge passage 28 It can be formed in anode component 6.In addition, one of them of electroplate liquid service duct 27 and plating liquid discharge passage 28 can be with shapes Into in one of them of fixed component 2 and anode component 6, and other electroplate liquid service ducts 27 and plating liquid discharge passage 28 It can be formed in other fixed components 2 and anode component 6.In the case where the replacing (circulation) of electroplate liquid is not required, electricity Plating solution service duct 27 and plating liquid discharge passage 28 can be omitted.
In addition, in one embodiment, electrolysis plating passes through respectively by cathode side conductive component 7 and anode side conductive portion Part 9 is connected to power supply PW and is carried out, but the present invention is not limited to this, cathode side conductive component 7 and anode side conductive part 9 Detection device (not shown) can be connected to replace power supply PW, and chemical plating fluid can be applied to through-Penetration portion as electroplate liquid Part 45.This allows electroplanting device 1 to carry out chemical plating, and allows detection device to detect plating during chemical plating Object W and anode layer 62 potential.
Next, reference picture 10 and Figure 11 descriptions use the sensing device of above-mentioned electroplanting device.
Figure 10 be using electroplanting device sensing device in pad plan;Figure 11 is the sensing using electroplanting device The bottom view of anode component in device.
Due to sensing device include with the part identical part in one embodiment, except pad 4B anode-side is led Electric layer 43B and anode component 6B anode layer 62B, anode side conductive layer 43B and anode layer 62B mainly can be ensuing Described in explanation, other parts are not described.
Such as Figure 10 shows that pad 4B includes multiple anode side conductives layer 43B (being eight in this improved embodiment), The surface just to anode component 6B is arranged at emanantly.Mutually insulated between each anode side conductive layer 43B.Each anode-side Conductive layer 43B outer end 43Ba is arranged at the position relative with the probe patchhole 66 of anode component 6.Further, Mei Geyang Pole side conductive layer 43B inner 43Bb extends through the periphery of part 45.
Such as Figure 11 shows that anode component 6B includes multiple anode layer 62B (being eight in this improved embodiment), The surface just to pad 4B is arranged at emanantly.Mutually insulated between each anode layer 62B.Each anode layer 62B is set It is placed in the position corresponding with anode side conductive layer 43B.Each anode layer 62B outer end 62Ba is extended to the interior of raceway groove 65 Edge, and contacted once it is assembled with anode side conductive layer 43B.Further, each anode layer 62B interior edge 62Bb extends to the outer of window 64, and exposed under part 45.
The interior of anode layer 62B is modified by eight kinds of mutually different reactive groups respectively along 62Bb.Reactive group be to by comprising There is the material of reaction being supplied to the potential material in the reactant of part 45 (see Fig. 2) of sensing device.Reactant Example includes the liquid for including an electrolyte (such as blood).In addition, the example of reactive group is included with particular combination acceptor One self-assembled monolayer (SAM).For example, the interior of each anode layer 62B is changed along 62Bb by self-assembled monolayer (SAM) Property, with having the metal ion for needing to be induced or needing the substance reaction of sensed function base.For example, Mei Geyang Pole soluble layer 62B it is interior along 62Bb by aminopropyl triethoxysilane (3-aminopropyltriethoxy silane) it is modified with With Pd ionic reactions.
Probe P is inserted into anode component 6B probe patchhole 66.Probe P mutual insulatings, and and detection device (not shown) is connected.
When reaction in modified anode layer 62B along between 62Bb reactive group and the material that is comprised in reactant During generation, such a sensing device can detect the change of anode layer 62Bd potential to examine by using detection device Survey the material being comprised in reactant.For example, sensing device can be by being used as the negative electrode of reference electrode and electrification Detection device connection is learned, to detect the change for the surface potential being under two electrode modes.In addition, being detected under three electrode modes It is also possible, negative electrode is set as counterelectrode in this mode, and one of them of eight negative electrodes is used as reference electrode.

Claims (11)

1. a kind of electroplanting device, including:
One fixed component, a fixed plating object as negative electrode;
One pad, is stacked in the fixed component by the first annular seal member for being surrounded on the plating object, and Run through part comprising one, expose the plating object through part and store electroplate liquid;And
One anode component, by being stacked in around the one second annular seal member through part on the pad, and Comprising an anode layer, anode layer is just to being exposed on the plating object run through under part;
Wherein, the pad includes a gasket body, and gasket body is made up of an insulating barrier, and anode side conductive layer, sun Pole side conductive layer is arranged on the surface of gasket body, just to the anode component,
The anode component includes an anode component main body, and anode component main body is made up of an insulating barrier, and an anode layer, Anode layer is arranged on the surface of anode component main body, and just the pad is being constituted,
The anode side conductive layer is connected with the anode layer in second seal member, and
The anode side conductive layer is connected with the power supply outside second seal member.
2. electroplanting device according to claim 1, it is characterised in that the anode component main body includes an optical guide window, For observing exposed to the plating object for running through part, and
The anode layer is formed around the thereabout.
3. electroplanting device according to claim 2, it is characterised in that the window have than the anode component main body its Its smaller thickness in part.
4. electroplanting device according to claim 2, it is characterised in that the thickness t1 of window scope be 0.05mm≤ t1≤2mm。
5. electroplanting device according to claim 2, it is characterised in that the anode component main body has a conical section, cone Shape partially surrounds the window and tilted to the window direction.
6. electroplanting device according to claim 1, it is characterised in that the thickness t2 of pad scope be 0.05mm≤ t2≤1mm。
7. electroplanting device according to claim 1, it is characterised in that the pad includes a cathode side conductive layer, negative electrode Side conductive layer is arranged on the surface of gasket body, just to the fixed component,
The cathode side conductive layer is connected with the plating object in first seal member, and
The cathode side conductive layer is connected with the power supply outside first seal member.
8. electroplanting device according to claim 1, it is characterised in that the pad includes a reference electrode conductive layer, with The anode side conductive layer insulation on the gasket body surface, and just to the anode component,
The anode component includes the anode layer insulation on a reference electrode layer, with the anode component body surfaces, And just to the pad,
The reference electrode conductive layer is connected with the reference electrode layer in second seal member, and
The reference electrode conductive layer is connected with the detection device outside second seal member.
9. electroplanting device according to claim 1, it is characterised in that the fixed component or the anode component include One electroplate liquid service duct, for providing electroplate liquid to the part that runs through, and
The fixed component or the anode component include a plating liquid discharge passage, and the electroplate liquid passes through plating liquid discharge Passage is from described through part discharge.
10. electroplanting device according to claim 7, it is characterised in that the electroplate liquid is chemical plating fluid, a detection device And non-power is connected, to detect the potential between anode and negative electrode.
11. a kind of sensing device, including the electroplanting device as described in any one in claim 1-9, it is characterised in that described Anode side conductive layer is made up of the anode side conductive layer of multiple mutually insulateds,
The anode layer is made up of the anode layer of the mutually insulated of quantity identical with the anode side conductive layer, the anode Soluble layer is corresponding with the position of anode side conductive layer, and
The various pieces of the anode layer run through under part are exposed on, are modified respectively by different reactive groups.
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