CN105471257A - Novel interleaved boost soft-switch circuit - Google Patents
Novel interleaved boost soft-switch circuit Download PDFInfo
- Publication number
- CN105471257A CN105471257A CN201510991470.3A CN201510991470A CN105471257A CN 105471257 A CN105471257 A CN 105471257A CN 201510991470 A CN201510991470 A CN 201510991470A CN 105471257 A CN105471257 A CN 105471257A
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- Prior art keywords
- diode
- circuit
- boost
- resonant
- switch circuit
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- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000013021 overheating Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
The present invention provides a novel interleaved boost soft-switch circuit. The circuit comprises a boost circuit and a soft-switch circuit connected with the boost circuit. A third diode is additionally connected in series to the inside of a branch of a resonant circuit composed of a resonant inductor, a first diode and a second diode in the soft-switch circuit, and a voltage drop of the branch is increased, so that under the same current condition, the voltage drop in the branch of the resonant circuit is greater than a voltage drop in a branch of a master diode connected in parallel with the branch of the resonant circuit, and thus, a current can flow mainly through the branch of the master diode in the boost circuit and the current flowing through the branch of the resonant circuit is decreased relatively; and furthermore, the problems of larger loss of the soft-switch circuit and overheating of a resonant inductor, which are caused by use of a sic diode in a conventional soft-switch + boost circuit, are solved.
Description
Technical field
The present invention relates to Boost circuit technical field, be specifically related to a kind of novel crisscross parallel boost soft switch circuit.
Background technology
The new forms of energy such as wind energy, solar energy all need could access electrical network after Technics of Power Electronic Conversion device is by converting direct-current power into alternating-current power, along with riseing year by year of generation of electricity by new energy amount, advance at a quick pace towards high-power, high-frequency, low-loss direction to the requirement of converters in market.Switch as the conversion of conventional electric power electronics has been difficult to satisfy the demands, and novel semi-conductor sic device has ultrafast switching speed, ultralow switching loss and better performance, is generally considered the power device of a new generation.And Boost circuit is widely used in various power supply product as a kind of the most basic DC/DC topology, and in photovoltaic generating system, adopt two-stage system, the Boost circuit of prime both can improve and stablize the output voltage of solar-energy photo-voltaic cell, can control to be put into prime step-up side by maximal power tracing again, simple and convenient.And two-stage system is in raising the efficiency, prime boost contactor frequency is all at more than 10KHz, at this moment its switching loss and electromagnetic interference problem very important on the impact of complete machine, therefore be limited to that traditional switching device can bring that boost circuit efficiency is low, switching loss is large, radiator volume is large and the problem such as switch tube voltage current stress, and use novel semi-conductor sic device to improve efficiency and the performance of system.And then after coordinating soft switch circuit, a nearly step can improve the efficiency of boost circuit.And in traditional Sofe Switch+boost circuit, because boost circuit uses sic diode, electric current major part can be made to flow through from soft switch circuit, make the loss ratio of soft switch circuit comparatively large, and the effective value that resonant inductance flows through increases, temperature rise is very high.If soft switch circuit also adopts sic diode, resonant inductance temperature can be reduced, but cost can increase much like this.
Problems of the prior art are analyzed:
Fig. 1 is existing boost soft switch circuit topology structure, boost circuit to be connected a main inductance L by a PV input direct-current source Uin positive terminal, main switch S1 and S2 is connected in inductance L and DC power supply Uin negative pole end in parallel, the output of inductance is connected a diode D, the anode of diode D is connected with the output of inductance L, the negative electrode of diode D is connected with late-class circuit, the positive pole of output capacitance C1 is connected with the negative electrode of diode D, the negative pole of output capacitance C1 is connected with DC power supply Uin negative pole end, and load resistance R and output capacitance are connected in parallel.Soft switch circuit is connected with the drain electrode of a switching tube Sa by a resonant inductance Lr, the other end of resonant inductance Lr is connected with the output of the inductance L in boost circuit, the source electrode of switching tube Sa is connected with DC power supply Uin negative pole end, the negative electrode of diode D1 is first connected with the anode of D2, then anode and the resonant inductance Lr of diode D1 are connected in series with switching tube Sa and are a little connected, the negative electrode of diode D2 is connected with the negative electrode of the diode D in boost circuit, one end of resonant capacitance Cr is connected with the anode of the diode D in boost circuit, the other end is a little connected with being connected in series of diode D1 with D2.
During circuit working, two main switches S1, S2 in boost circuit interlock conducting, and the operating frequency of the Sofe Switch Sa in soft switch circuit is the twice of main switch S1, S2 frequency in its boost circuit.Because soft switch circuit breaker in middle pipe Sa is first open-minded before main switch S1 and S2 in boost circuit opens, and the ON time of Sa pipe is shorter than the ON time being responsible for S1 and S2 in boost circuit, so the current effective value flowing through resonant inductance Lr when main switch S1 and S2 opens in boost circuit is very little, and have no progeny in main switch S1 and S2 pass, resonant capacitance Cr very fast by after fault offset to bus capacitor C1, main diode D conducting, and now at D and Lr, D1, in the parallel circuits of D2 composition, because D pipe adopts sic diode, when same current flows through, the pressure drop that the common diode of himself pressure drop ratio produces is higher, when electric current is large, pressure drop can be higher, make load current major part from the Lr resonant circuit like this, D1, flow through in the branch road of D2 composition, the current effective value flowing through resonant inductance Lr in the whole like this cycle is very large, thus cause the temperature of resonant inductance higher, in order to reduce the heating of resonant inductance Lr, then need resonant inductance designed larger or take the measures such as air-cooled to resonant inductance, make system more complicated like this, cost is higher.
Summary of the invention
In order to overcome above-mentioned prior art Problems existing, the object of the present invention is to provide a kind of novel crisscross parallel boost soft switch circuit, the electric current that soft switch circuit flows through can be reduced, and then the problem that soft switch circuit loss is comparatively large and resonant inductance is overheated using sic diode to bring in traditional Sofe Switch+boost circuit can be solved.
For achieving the above object, the technical solution adopted in the present invention is:
A kind of novel crisscross parallel boost soft switch circuit, the soft switch circuit comprising boost circuit and be connected with boost circuit, described soft switch circuit is connected with the drain electrode of a switching tube Sa by a resonant inductance Lr, the negative electrode of the first diode D1 is first connected with the anode of the second diode D2, then anode and the resonant inductance Lr of the first diode D1 are connected in series with switching tube Sa and are a little connected, the negative electrode of the second diode D2 is connected with the negative electrode of the main diode D in boost circuit, one end of resonant capacitance Cr is connected with the anode of the main diode D in boost circuit, the other end is a little connected with the second being connected in series of diode D2 with the first diode D1, connected in the resonant circuit branch road be made up of resonant inductance Lr, the first diode D1 and the second diode D2 in described soft switch circuit a 3rd diode D3 more, increase the pressure drop of this branch road, make in same current situation, the pressure drop of the main diode D branch road that the pressure drop ratio in resonant circuit branch road is connected in parallel with it is large, such electric current just can mainly flow through from the branch road of the main diode D boost circuit, and the electric current flowing through resonant circuit branch road reduces relatively.
After described 3rd diode D3 is serially connected in the second diode D2, namely the anode of the 3rd diode D3 is connected with the negative electrode of the second diode D2, and the negative electrode of the 3rd diode D3 is connected with the negative electrode of the diode D in boost circuit.
Described 3rd diode D3 is serially connected in one end or the other end of resonant inductance Lr.
Described 3rd diode D3 is serially connected in one end or the other end of the first diode D1.
Compared to the prior art comparatively, the present invention possesses following advantage:
The present invention increases a general-purpose diode in original Sofe Switch+boost circuit, the electric current that soft switch circuit flows through can be reduced, and then the problem that soft switch circuit loss is comparatively large and resonant inductance is overheated using sic diode to bring in traditional Sofe Switch+boost circuit can be solved.
Accompanying drawing explanation
Fig. 1 is existing boost soft switch circuit topology structure.
Fig. 2 is the first topological structure of the present invention novel crisscross parallel boost soft switch circuit.
Fig. 3 is the present invention novel crisscross parallel boost soft switch circuit the second topological structure.
Fig. 4 is the third topological structure of the present invention novel crisscross parallel boost soft switch circuit.
Fig. 5 is the present invention novel crisscross parallel boost soft switch circuit the 4th kind of topological structure.
Fig. 6 is the present invention novel crisscross parallel boost soft switch circuit the 5th kind of topological structure.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
A kind of novel crisscross parallel boost soft switch circuit of the present invention, the soft switch circuit comprising boost circuit and be connected with boost circuit, described soft switch circuit is connected with the drain electrode of a switching tube Sa by a resonant inductance Lr, the negative electrode of the first diode D1 is first connected with the anode of the second diode D2, then anode and the resonant inductance Lr of the first diode D1 are connected in series with switching tube Sa and are a little connected, the negative electrode of the second diode D2 is connected with the negative electrode of the main diode D in boost circuit, one end of resonant capacitance Cr is connected with the anode of the main diode D in boost circuit, the other end is a little connected with the second being connected in series of diode D2 with the first diode D1, connected in the resonant circuit branch road be made up of resonant inductance Lr, the first diode D1 and the second diode D2 in described soft switch circuit a 3rd diode D3 more, increase the pressure drop of this branch road, make in same current situation, the pressure drop of the main diode D branch road that the pressure drop ratio in resonant circuit branch road is connected in parallel with it is large, such electric current just can mainly flow through from the branch road of the main diode D boost circuit, and the electric current flowing through resonant circuit branch road reduces relatively.
As shown in Figure 2, after described 3rd diode D3 is serially connected in the second diode D2, namely the anode of the 3rd diode D3 is connected with the negative electrode of the second diode D2, and the negative electrode of the 3rd diode D3 is connected with the negative electrode of the main diode D in boost circuit.Other circuit connects identical with the circuit of prior art.
During circuit working, the about 0.7V of general-purpose diode tube used for bottom pouring pressure drop, the about 1V of sic diode tube used for bottom pouring pressure drop, under equal electric current and temperature, tube voltage drop is approximately about 1.4 times of general-purpose diode, and diode can be able to increase along with electric current increases its tube voltage drop, institute thinks and ensures that Sofe Switch diode still can end reliably when fully loaded work, need series connection three Sofe Switch diodes to ensure that its overall presure drop is greater than the pressure drop of main diode D when fully loaded work, so just can ensure that Sofe Switch diode does not have electric current to flow through when main diode D conducting substantially, so just can reduce the temperature rise of Sofe Switch diode, again reduce the current effective value flowing through resonant inductance Lr, considerably reduce the temperature rise of resonant inductance Lr, solve the problem that when soft switch circuit uses general-purpose diode, resonant inductance temperature is too high.Certainly in order to solve this problem, soft switch circuit also can be connected more diode, but can increase the loss of whole circuit breaker in middle pipe like this and increase circuit cost.
In the resonant circuit branch road be made up of resonant inductance Lr, the first diode D1 and the second diode D2 in soft switch circuit, series diode is mainly in order to increase the pressure drop of this branch road, make in same current situation, in resonant circuit, the pressure drop of the main diode D branch road that the pressure drop ratio of branch road is connected in parallel with it is large, such electric current just can mainly flow through from the branch road of the main diode D boost circuit, and the electric current flowing through resonant circuit branch road reduces relatively, so the diode D3 that connects Anywhere in this resonance current all can reach this object.
As shown in Figure 3 and Figure 4, described 3rd diode D3 is serially connected in one end or the other end of resonant inductance Lr.
As shown in Figure 5 and Figure 6, described 3rd diode D3 is serially connected in one end or the other end of the first diode D1.
Claims (4)
1. a novel crisscross parallel boost soft switch circuit, the soft switch circuit comprising boost circuit and be connected with boost circuit, described soft switch circuit is connected with the drain electrode of a switching tube (Sa) by a resonant inductance (Lr), the negative electrode of the first diode (D1) is first connected with the anode of the second diode (D2), then anode and the resonant inductance (Lr) of the first diode (D1) are connected in series with switching tube (Sa) and are a little connected, the negative electrode of the second diode (D2) is connected with the negative electrode of the main diode (D) in boost circuit, one end of resonant capacitance (Cr) is connected with the anode of the main diode (D) in boost circuit, the other end is a little connected with being connected in series of the second diode (D2) with the first diode (D1), it is characterized in that: the 3rd diode (D3) of having connected in the resonant circuit branch road be made up of resonant inductance (Lr), the first diode (D1) and the second diode (D2) in described soft switch circuit more, increase the pressure drop of this branch road, make in same current situation, the pressure drop of main diode (D) branch road that the pressure drop ratio in resonant circuit branch road is connected in parallel with it is large, such electric current just can mainly flow through from the branch road of the main diode (D) boost circuit, and the electric current flowing through resonant circuit branch road reduces relatively.
2. novel crisscross parallel boost soft switch circuit according to claim 1, it is characterized in that: after described 3rd diode (D3) is serially connected in the second diode (D2), namely the anode of the 3rd diode (D3) is connected with the negative electrode of the second diode (D2), and the negative electrode of the 3rd diode (D3) is connected with the negative electrode of the diode (D) in boost circuit.
3. novel crisscross parallel boost soft switch circuit according to claim 1, is characterized in that: described 3rd diode (D3) is serially connected in one end or the other end of resonant inductance (Lr).
4. novel crisscross parallel boost soft switch circuit according to claim 1, is characterized in that: described 3rd diode (D3) is serially connected in one end or the other end of the first diode (D1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510991470.3A CN105471257A (en) | 2015-12-24 | 2015-12-24 | Novel interleaved boost soft-switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510991470.3A CN105471257A (en) | 2015-12-24 | 2015-12-24 | Novel interleaved boost soft-switch circuit |
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| Publication Number | Publication Date |
|---|---|
| CN105471257A true CN105471257A (en) | 2016-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510991470.3A Pending CN105471257A (en) | 2015-12-24 | 2015-12-24 | Novel interleaved boost soft-switch circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649810A (en) * | 2019-08-15 | 2020-01-03 | 华为技术有限公司 | DC-DC conversion circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219299A (en) * | 1997-02-10 | 1999-06-09 | Tdk株式会社 | Step-up switching power supply |
| CN102332813A (en) * | 2010-07-13 | 2012-01-25 | 世系动力公司 | Power factor correction efficiency improvement circuit, a converter employing the circuit and a method of manufacturing a converter |
| US20150229205A1 (en) * | 2014-02-13 | 2015-08-13 | Nxp B.V. | Diode circuit and power factor correction boost converter using the same |
| CN205336107U (en) * | 2015-12-24 | 2016-06-22 | 特变电工西安电气科技有限公司 | Crisscross parallelly connected soft switch circuit of boost |
-
2015
- 2015-12-24 CN CN201510991470.3A patent/CN105471257A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219299A (en) * | 1997-02-10 | 1999-06-09 | Tdk株式会社 | Step-up switching power supply |
| CN102332813A (en) * | 2010-07-13 | 2012-01-25 | 世系动力公司 | Power factor correction efficiency improvement circuit, a converter employing the circuit and a method of manufacturing a converter |
| US20150229205A1 (en) * | 2014-02-13 | 2015-08-13 | Nxp B.V. | Diode circuit and power factor correction boost converter using the same |
| CN205336107U (en) * | 2015-12-24 | 2016-06-22 | 特变电工西安电气科技有限公司 | Crisscross parallelly connected soft switch circuit of boost |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110649810A (en) * | 2019-08-15 | 2020-01-03 | 华为技术有限公司 | DC-DC conversion circuit |
| US11894762B2 (en) | 2019-08-15 | 2024-02-06 | Huawei Digital Power Technologies Co., Ltd. | Direct current-direct current conversion circuit |
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Application publication date: 20160406 |
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