CN105470356A - Dual-wavelength LED chip and manufacturing method therefor - Google Patents

Dual-wavelength LED chip and manufacturing method therefor Download PDF

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Publication number
CN105470356A
CN105470356A CN201510897553.6A CN201510897553A CN105470356A CN 105470356 A CN105470356 A CN 105470356A CN 201510897553 A CN201510897553 A CN 201510897553A CN 105470356 A CN105470356 A CN 105470356A
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Prior art keywords
layer
ingan
quantum well
dual
gan
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冯猛
陈立人
刘恒山
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FOCUS LIGHTINGS TECHNOLOGY Co Ltd
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FOCUS LIGHTINGS TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a dual-wavelength LED chip. The chip, from bottom to top, comprises: a substrate; an N-type semiconductor layer located on the substrate; a first luminous layer located on the N-type semiconductor layer; a second luminous layer located on the first luminous layer; and a P-type semiconductor layer located on the second luminous layer. Compared with the prior art, the chip has the characteristics that the first luminous layer and the second luminous layer grow on the N-type semiconductor layer with line dislocation by utilizing different growth processes, the first luminous layer is a first InGaN/GaN quantum well layer, the second luminous layer is a second InGaN/GaN quantum well layer, and the components of In in the first InGaN/GaN quantum well layer and the second InGaN/GaN quantum well layer are different, so that the dual-wavelength LED chip can emit two types of light with different wavelengths when being excited, and various negative problems caused by use of fluorescent powder are avoided.

Description

A kind of dual-wavelength LEDs chip and preparation method thereof
Technical field
The present invention relates to technical field of semiconductor luminescence, particularly relate to a kind of dual-wavelength LEDs chip and preparation method thereof.
Background technology
Light-emitting diode (Light-EmittingDiode, LED) is a kind of semiconductor electronic component that can be luminous.This electronic component occurred as far back as 1962, and can only send the ruddiness of low luminosity in early days, develop other monochromatic versions afterwards, the light that can send even to this day is throughout visible ray, infrared ray and ultraviolet, and luminosity also brings up to suitable luminosity.And purposes is also by the beginning as indicator light, display panel etc.; Along with the continuous progress of technology, light-emitting diode has been widely used in display, television set daylighting decoration and illumination.
Current light-emitting diode can only send the light of single wavelength mostly, and such as, commercial LED white illumination light source, is normally excited gold-tinted YAG fluorescent powder to obtain by blue light GaN base LED.But it is uneven that this method can exist colour temperature, the energy loss in blue-light excited fluorescent material process, in addition, also can increase the problems such as additional package cost.
Summary of the invention
The object of the present invention is to provide a kind of dual-wavelength LEDs chip solved the problem and preparation method thereof.
To achieve these goals, the technical scheme that the embodiment of the present invention provides is as follows: a kind of dual-wavelength LEDs chip, and described dual-wavelength LEDs chip comprises from bottom to top successively:
Substrate;
Be positioned at the n type semiconductor layer on described substrate;
Be positioned at the first luminescent layer on described n type semiconductor layer;
Be positioned at the second luminescent layer on described first luminescent layer;
Be positioned at the p type semiconductor layer on described second luminescent layer;
Wherein, described first luminescent layer is an InGaN/GaN quantum well layer, described second luminescent layer is the 2nd InGaN/GaN quantum well layer, a described InGaN/GaN quantum well layer is different with the component of the In in described 2nd InGaN/GaN quantum well layer, sends the light of two kinds of different wave lengths when described dual-wavelength LEDs chip is stimulated.
As a further improvement on the present invention, described n type semiconductor layer has line dislocation.
As a further improvement on the present invention, described first luminescent layer and described second luminescent layer have down the three-dimensional carrier transport structure of hexagonal pyramidal, and hole is injected in described first luminescent layer and described second luminescent layer as current delivery passage by the three-dimensional carrier transport structure of described hexagonal pyramidal respectively.
As a further improvement on the present invention, a described InGaN/GaN quantum well layer comprises 2 ~ 3nmInGaN layer in stacking 3 ~ 12 cycles and the GaN layer of 10 ~ 15nm.
As a further improvement on the present invention, described 2nd InGaN/GaN quantum well layer comprises 2 ~ 3nmInGaN layer in stacking 3 ~ 6 cycles and the GaN layer of 5 ~ 12nm.
As a further improvement on the present invention, be also provided with between described substrate and described n type semiconductor layer and involuntaryly mix semiconductor layer.
Correspondingly, a kind of preparation method of LED chip, described method comprises:
One substrate is provided;
At Grown n type semiconductor layer;
N type semiconductor layer grows the first luminescent layer, and described first luminescent layer is an InGaN/GaN quantum well layer;
First luminescent layer grows the second luminescent layer, and described second luminescent layer is the 2nd InGaN/GaN quantum well layer;
Growing P-type semiconductor layer on the second luminescent layer;
Make P electrode and N electrode;
Wherein, a described InGaN/GaN quantum well layer is different with the component of the In in described 2nd InGaN/GaN quantum well layer, sends the light of two kinds of different wave lengths when described dual-wavelength LEDs chip is stimulated.
As a further improvement on the present invention, the preparation method of described LED chip also comprises:
Mix semiconductor layer Grown is involuntary step " at Grown N type semiconductor " is front.
As a further improvement on the present invention, described " growing the first luminescent layer on N type semiconductor " step is specially:
Temperature is controlled the GaN layer at 780 ~ 850 DEG C of growth 10 ~ 15nm, then temperature is controlled the InGaN quantum well layer at 720 ~ 760 DEG C of growth 2 ~ 3nm, repeat above-mentioned two step 3 ~ 12 cycles, form an InGaN/GaN quantum well layer, wherein, the growth rate of GaN layer is 0.04 ~ 0.08nm/s.
As a further improvement on the present invention, described " growing the second luminescent layer on the first luminescent layer " step is specially: temperature is controlled the GaN layer at 780 ~ 850 DEG C of growth 5 ~ 12nm, then temperature is controlled the InGaN quantum well layer at 720 ~ 760 DEG C of growth 2 ~ 3nm, repeat above-mentioned two step 3 ~ 6 cycles, form the 2nd InGaN/GaN quantum well layer, wherein, the growth rate of GaN layer is 0.02 ~ 0.05nm/s.
The invention has the beneficial effects as follows: on the n type semiconductor layer with line dislocation, utilize different growth techniques not grow the first luminescent layer and the second luminescent layer successively, first luminescent layer is an InGaN/GaN quantum well layer, second luminescent layer is the 2nd InGaN/GaN quantum well layer, one InGaN/GaN quantum well layer is different with the component of the In in the 2nd InGaN/GaN quantum well layer, first luminescent layer and described second luminescent layer have down the three-dimensional carrier transport structure of hexagonal pyramidal, hole is injected in described first luminescent layer and described second luminescent layer as current delivery passage by the three-dimensional carrier transport structure of described hexagonal pyramidal respectively, the light of two kinds of different wave lengths can be sent when dual-wavelength LEDs chip is stimulated, avoid the multiple negative issue by introducing after fluorescent material.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the cross-sectional view of dual-wavelength LEDs chip in one embodiment of the invention.
Fig. 2 is the SEM photo of the three-dimensional carrier transport structure of the shape of falling hexagonal pyramidal of dual-wavelength LEDs chip in one embodiment of the invention.
Fig. 3 is the flow chart of steps of LED chip preparation method in one embodiment of the invention.
Fig. 4 is the dual wavelength light spectrogram utilizing different electric current to excite same dual-wavelength LEDs chip acquisition in one embodiment of the invention.
Embodiment
Technical scheme in the present invention is understood better in order to make those skilled in the art person, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, should belong to the scope of protection of the invention.
In addition, label or the sign of repetition may be used in various embodiments.These repeat only clearly to describe the present invention in order to simple, do not represent between discussed different embodiment and/or structure and have any relevance.
Shown in ginseng Fig. 1 to Fig. 2, in the first embodiment of the present invention, dual-wavelength LEDs chip is respectively from bottom to up:
Substrate 100, substrate can be sapphire, Si, SiC, GaN, ZnO etc.;
Involuntaryly mix semiconductor layer 200, the involuntary semiconductor layer that mixes can be GaN etc.;
N type semiconductor layer 300, n type semiconductor layer can be N-type GaN etc.;
First luminescent layer 400, first luminescent layer is an InGaN/GaN quantum well layer, and it comprises 2 ~ 3nmInGaN layer in stacking 3 ~ 12 cycles and the GaN layer of 10 ~ 15nm;
Second luminescent layer 500, second luminescent layer is the 2nd InGaN/GaN quantum well layer, and it comprises 2 ~ 3nmInGaN layer in stacking 3 ~ 6 cycles and the GaN layer of 5 ~ 12nm.
P type semiconductor layer 600, p type semiconductor layer can be high temperature P type GaN etc.
Preferably, an InGaN/GaN quantum well layer is different with the component of the In in the 2nd InGaN/GaN quantum well layer.
More preferably, n type semiconductor layer 300 has line dislocation (threadingdislocations), first luminescent layer 400 is positioned at n type semiconductor layer 300, second luminescent layer 500 is positioned on the first luminescent layer 400, line dislocation in n-type semiconductor layer 300, in its growth course, the three-dimensional carrier transport structure 700 of the shape of falling hexagonal pyramidal is formed in first luminescent layer 400 and the second luminescent layer 500, hole is injected in the first luminescent layer 400 and the second luminescent layer 500 as current delivery passage by the three-dimensional carrier transport structure 700 of being somebody's turn to do the shape of falling hexagonal pyramidal respectively, different with the component of the In in described 2nd InGaN/GaN quantum well layer in conjunction with an InGaN/GaN quantum well layer again, the light of two kinds of different wave lengths is sent out when same dual-wavelength LEDs chip is stimulated, thus avoid the multiple negative issue by introducing after fluorescent material.
Shown in ginseng Fig. 3, the preparation method of LED chip in the present embodiment, specifically comprises:
There is provided a substrate, as Sapphire Substrate (plain film or patterned substrate).
At Grown n type semiconductor layer.Under the high temperature conditions, substrate grows involuntary doping semiconductor layer and n type semiconductor layer successively.
N type semiconductor layer grows the first luminescent layer, first luminescent layer is an InGaN/GaN quantum well layer, temperature is controlled the GaN layer at 780 ~ 850 DEG C of growth 10 ~ 15nm, then temperature is controlled the InGaN quantum well layer at 720 ~ 760 DEG C of growth 2 ~ 3nm, repeat above-mentioned two step 3 ~ 12 cycles, form an InGaN/GaN quantum well layer, wherein, the growth rate of GaN layer is 0.04 ~ 0.08nm/s.
First luminescent layer grows the second luminescent layer, second luminescent layer is the 2nd InGaN/GaN quantum well layer, temperature is controlled the GaN layer at 780 ~ 850 DEG C of growth 5 ~ 12nm, then temperature is controlled the InGaN quantum well layer at 720 ~ 760 DEG C of growth 2 ~ 3nm, repeat above-mentioned two step 3 ~ 6 cycles, form the 2nd InGaN/GaN quantum well layer, wherein, the growth rate of GaN layer is 0.02 ~ 0.05nm/s.
Preferably, a described InGaN/GaN quantum well layer is different with the component of the In in described 2nd InGaN/GaN quantum well layer, sends the light of two kinds of different wave lengths when described dual-wavelength LEDs chip is stimulated.Especially, n type semiconductor layer 300 has line dislocation (threadingdislocations), line dislocation in n-type semiconductor layer 300, in its growth course, form the three-dimensional carrier transport structure of the shape of falling hexagonal pyramidal in first luminescent layer 400 and the second luminescent layer 500, hole is injected in the first luminescent layer 400 and the second luminescent layer 500 as current delivery passage by the three-dimensional carrier transport structure of this shape of falling hexagonal pyramidal respectively.
Growing P-type semiconductor layer on the second luminescent layer, under the high temperature conditions, growing P-type semiconductor layer on the second luminescent layer;
Make P electrode and N electrode, P electrode and p type semiconductor layer are electrically connected, and N electrode to be positioned on N type semiconductor table top and to be electrically connected with n type semiconductor layer.
Wherein, the GaN epitaxial layer such as n type semiconductor layer, luminescent layer and p type semiconductor layer adopt normal MESA technique to make, and P electrode and N electrode also adopt Common deposition or evaporation process to make, and are no longer described in detail in the present invention.
In order to better set forth the present invention, below provide the specific embodiment of the preparation method of a dual wavelength LED chip.
1), a slice graphical sapphire substrate is placed on the load plate of MOCVD;
2), under the high temperature conditions, in the involuntary doped gan layer of above-mentioned Grown on Sapphire Substrates 3um;
3), under the high temperature conditions, in above-mentioned involuntary doped gan layer growth 3umN type GaN layer;
4), temperature is controlled at about 800 DEG C, at the GaN barrier layer of above-mentioned N-type GaN layer growth 13nm, then temperature is controlled the InGaN potential well layer at 750 DEG C of growth 2.5nm, repeat above-mentioned two step 8 cycles, form an InGaN/GaN quantum well layer, wherein, In component is the 9%, one InGaN/GaN quantum well wavelength is 410nm.
5), temperature is controlled at about 830 DEG C, at the GaN barrier layer of an above-mentioned InGaN/GaN quantum well layer growth 7nm, then temperature is controlled the InGaN potential well layer at 730 DEG C of growth 3nm, repeat above-mentioned two step 5 cycles, form the 2nd InGaN/GaN quantum well layer, wherein, In component is the 14%, two InGaN/GaN quantum well wavelength is 440nm.
6), in high temperature P type GaN layer.
7), the LED chip prepared of above-mentioned technique, adopt conventional chip technology to prepare 250x580mm 2lED chip.
Shown in ginseng Fig. 4, the LED chip utilizing technique of the present invention to prepare is under the exciting being subject to different electric current, and same LEDs chip can send the light of two kinds of different wave lengths, thus avoids the multiple negative issue by introducing after fluorescent material.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.

Claims (10)

1. a dual-wavelength LEDs chip, is characterized in that, described dual-wavelength LEDs chip comprises from bottom to top successively:
Substrate;
Be positioned at the n type semiconductor layer on described substrate;
Be positioned at the first luminescent layer on described n type semiconductor layer;
Be positioned at the second luminescent layer on described first luminescent layer;
Be positioned at the p type semiconductor layer on described second luminescent layer;
Wherein, described first luminescent layer is an InGaN/GaN quantum well layer, described second luminescent layer is the 2nd InGaN/GaN quantum well layer, a described InGaN/GaN quantum well layer is different with the component of the In in described 2nd InGaN/GaN quantum well layer, sends the light of two kinds of different wave lengths when described dual-wavelength LEDs chip is stimulated.
2. dual-wavelength LEDs chip according to claim 1, is characterized in that, described n type semiconductor layer has line dislocation.
3. dual-wavelength LEDs chip according to claim 2, it is characterized in that, described first luminescent layer and described second luminescent layer have down the three-dimensional carrier transport structure of hexagonal pyramidal, and hole is injected in described first luminescent layer and described second luminescent layer as current delivery passage by the three-dimensional carrier transport structure of described hexagonal pyramidal respectively.
4. dual-wavelength LEDs chip according to claim 1, is characterized in that, a described InGaN/GaN quantum well layer comprises 2 ~ 3nmInGaN layer in stacking 3 ~ 12 cycles and the GaN layer of 10 ~ 15nm.
5. dual-wavelength LEDs chip according to claim 1, is characterized in that, described 2nd InGaN/GaN quantum well layer comprises 2 ~ 3nmInGaN layer in stacking 3 ~ 6 cycles and the GaN layer of 5 ~ 12nm.
6. dual-wavelength LEDs chip according to claim 1, is characterized in that, is also provided with involuntaryly to mix semiconductor layer between described substrate and described n type semiconductor layer.
7. a preparation method for dual-wavelength LEDs chip, is characterized in that, described method comprises:
One substrate is provided;
At Grown n type semiconductor layer;
N type semiconductor layer grows the first luminescent layer, and described first luminescent layer is an InGaN/GaN quantum well layer;
First luminescent layer grows the second luminescent layer, and described second luminescent layer is the 2nd InGaN/GaN quantum well layer;
Growing P-type semiconductor layer on the second luminescent layer;
Make P electrode and N electrode;
Wherein, a described InGaN/GaN quantum well layer is different with the component of the In in described 2nd InGaN/GaN quantum well layer, sends the light of two kinds of different wave lengths when described dual-wavelength LEDs chip is stimulated.
8. the preparation method of dual-wavelength LEDs chip according to claim 7, is characterized in that, the preparation method of described LED chip also comprises:
Mix semiconductor layer Grown is involuntary step " at Grown N type semiconductor " is front.
9. the preparation method of dual-wavelength LEDs chip according to claim 7, is characterized in that, described " growing the first luminescent layer on N type semiconductor " step is specially:
Temperature is controlled the GaN layer at 780 ~ 850 DEG C of growth 10 ~ 15nm, then temperature is controlled the InGaN quantum well layer at 720 ~ 760 DEG C of growth 2 ~ 3nm, repeat above-mentioned two step 3 ~ 12 cycles, form an InGaN/GaN quantum well layer, wherein, the growth rate of GaN layer is 0.04 ~ 0.08nm/s.
10. the preparation method of dual-wavelength LEDs chip according to claim 7, it is characterized in that, described " growing the second luminescent layer on the first luminescent layer " step is specially: temperature is controlled the GaN layer at 780 ~ 850 DEG C of growth 5 ~ 12nm, then temperature is controlled the InGaN quantum well layer at 720 ~ 760 DEG C of growth 2 ~ 3nm, repeat above-mentioned two step 3 ~ 6 cycles, form the 2nd InGaN/GaN quantum well layer, wherein, the growth rate of GaN layer is 0.02 ~ 0.05nm/s.
CN201510897553.6A 2015-12-08 2015-12-08 Dual-wavelength LED chip and manufacturing method therefor Pending CN105470356A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106618478A (en) * 2017-01-16 2017-05-10 中国科学院上海光学精密机械研究所 Handheld fundus camera with main illuminating rays sharing same light path
CN109755363A (en) * 2019-01-14 2019-05-14 西安交通大学 A kind of wide spectrum semiconductor active device and its manufacturing method
CN110061105A (en) * 2019-04-10 2019-07-26 江西圆融光电科技有限公司 LED preparation method and LED
CN110337730A (en) * 2017-02-24 2019-10-15 欧司朗光电半导体有限公司 Opto-electronic semiconductor chip

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CN102074626A (en) * 2009-10-19 2011-05-25 Lg伊诺特有限公司 Light emitting device, light emitting device package and lighting system
US20150115223A1 (en) * 2013-10-28 2015-04-30 Seoul Viosys Co., Ltd. Semiconductor device and method of manufacturing the same
US20150263232A1 (en) * 2014-03-14 2015-09-17 Kabushiki Kaisha Toshiba Optical semiconductor element
CN205231095U (en) * 2015-12-08 2016-05-11 聚灿光电科技股份有限公司 Dual wavelength LED chip

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Publication number Priority date Publication date Assignee Title
CN102074626A (en) * 2009-10-19 2011-05-25 Lg伊诺特有限公司 Light emitting device, light emitting device package and lighting system
US20150115223A1 (en) * 2013-10-28 2015-04-30 Seoul Viosys Co., Ltd. Semiconductor device and method of manufacturing the same
US20150263232A1 (en) * 2014-03-14 2015-09-17 Kabushiki Kaisha Toshiba Optical semiconductor element
CN205231095U (en) * 2015-12-08 2016-05-11 聚灿光电科技股份有限公司 Dual wavelength LED chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106618478A (en) * 2017-01-16 2017-05-10 中国科学院上海光学精密机械研究所 Handheld fundus camera with main illuminating rays sharing same light path
CN110337730A (en) * 2017-02-24 2019-10-15 欧司朗光电半导体有限公司 Opto-electronic semiconductor chip
CN109755363A (en) * 2019-01-14 2019-05-14 西安交通大学 A kind of wide spectrum semiconductor active device and its manufacturing method
CN110061105A (en) * 2019-04-10 2019-07-26 江西圆融光电科技有限公司 LED preparation method and LED
CN110061105B (en) * 2019-04-10 2020-09-01 江西圆融光电科技有限公司 LED preparation method and LED

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