CN105470349A - PERC solar cell and preparation method thereof - Google Patents
PERC solar cell and preparation method thereof Download PDFInfo
- Publication number
- CN105470349A CN105470349A CN201511023431.0A CN201511023431A CN105470349A CN 105470349 A CN105470349 A CN 105470349A CN 201511023431 A CN201511023431 A CN 201511023431A CN 105470349 A CN105470349 A CN 105470349A
- Authority
- CN
- China
- Prior art keywords
- passivation layer
- silicon
- layer
- silicon nitride
- alumina
- Prior art date
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 20
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 20
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 60
- 239000010703 silicon Substances 0.000 claims abstract description 60
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 43
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 36
- 239000004411 aluminium Substances 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 9
- 229910000632 Alusil Inorganic materials 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 238000005553 drilling Methods 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 6
- 229910000676 Si alloy Inorganic materials 0.000 abstract 2
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract 2
- 238000010079 rubber tapping Methods 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a PERC solar cell and a preparation method thereof. The PERC solar cell comprises a silicon wafer, a silicon dioxide layer, a silver layer, a front-side silicon nitride passivation layer, an aluminum oxide passivation layer and a back-side silicon nitride passivation layer, wherein the silicon dioxide layer and the silver layer are arranged on the upper surface of the silicon wafer, the front-side silicon nitride passivation layer is arranged on the upper surface of the silicon dioxide layer, the aluminum oxide passivation layer is arranged on the lower surface of the silicon wafer, the back-side silicon nitride passivation layer is arranged on the lower surface of the aluminum oxide passivation layer, a plurality of opening holes are formed on the back-side silicon nitride passivation layer at intervals, and the opening holes are filled with an aluminum layer to form aluminum silicon alloy with the silicon wafer after the aluminum oxide passivation layer is corroded. In the PERC solar cell, the opening holes are formed on the back-side silicon nitride passivation layer in a laser tapping mode, the depths of the holes are controlled in a way that the back-side silicon nitride passivation layer is punched while the aluminum oxide passivation layer is not punched, and then an aluminum paste is printed and forms the aluminum silicon alloy with the silicon wafer after the aluminum oxide passivation layer is corroded by a sintering process. The silicon dioxide layer is prepared between the front-side silicon nitride passivation layer and the silicon wafer, and thus, the problem of potential induced attenuation of the PERC solar cell can be effectively solved.
Description
Technical field:
The present invention relates to a kind of PERC solar cell and preparation method thereof, it belongs to field of photovoltaic technology.
Background technology:
The production stage of existing PERC solar cell generally comprises cleaning and texturing, diffusion PN junction, etches and go PSG, passivation on double surfaces, laser beam drilling, silk screen printing, sintering.Wherein laser beam drilling is in order to metal electrode and silicon chip form good contact, and the quality of perforate directly has influence on the fill factor, curve factor of battery, thus affects the conversion efficiency of battery.Alundum (Al2O3) is amphoteric oxide, can react with strong acid and highly basic, so, perforate can be carried out by the method for chemical corrosion.Meanwhile, the application being laser-ablated in micro Process aspect is more and more extensive, also can be used as alundum (Al2O3) perforate.
Prior art Problems existing and shortcoming:
Chemical corrosion: mask wet etching method, step is many, flow process is complicated, and easily introduce ionic soil, waste chemicals easily works the mischief to environment, and the slurry corrosion method occurred in the recent period, add the composition that can corrode alundum (Al2O3) and silicon nitride in the slurry, harmful effect can be caused to the evenness of aluminium film;
Existing laser beam drilling technology: by laser ablation, removed completely by alundum (Al2O3), cause damage unavoidably to silicon chip surface, forms defect center, affects passivation effect.
There is no separator between front side silicon nitride silicon passivation layer and silicon chip, be easy to occur PID (potential inducing decay) phenomenon.
Summary of the invention:
The invention provides a kind of PERC solar cell and preparation method thereof, it effectively can solve PERC solar cell potential inducing attenuation problem.
The present invention adopts following technical scheme: a kind of PERC solar cell, comprise silicon chip, be positioned at the silicon dioxide layer of silicon chip upper surface and silver layer, be positioned at the front side silicon nitride silicon passivation layer of silicon dioxide layer upper surface, be positioned at the alumina passivation layer of silicon chip lower surface, be positioned at the back side silicon nitride silicon passivation layer of alumina passivation layer lower surface, spaced apartly on silicon nitride passivation be overleaf provided with several perforates, in perforate, be filled with the aluminium lamination forming alusil alloy after eroding alumina passivation layer with silicon chip.
Further, described perforate extends in alumina passivation layer after back side silicon nitride silicon passivation layer.
The present invention adopts following technical scheme: a kind of preparation method of PERC solar cell, it comprises the steps:
Step 1, upper surface applying silicon oxide layer at silicon chip, at the upper surface plating front side silicon nitride silicon passivation layer of silicon dioxide layer, at the lower surface plating alumina passivation layer of silicon chip, at the lower surface plating back side silicon nitride silicon passivation layer of alumina passivation layer;
By the perforate of laser beam drilling mode in step 2, overleaf silicon nitride passivation, wherein perforate extends in alumina passivation layer after back side silicon nitride silicon passivation layer, and perforate does not punch alumina passivation layer;
Step 3, on the upper surface of silicon chip printing silver slurry formed silver layer, overleaf silicon nitride passivation prints aluminium paste formed aluminium lamination, form alusil alloy with silicon chip after wherein aluminium paste erodes alumina passivation layer.
The present invention has following beneficial effect:
(1). the present invention overleaf on silicon nitride passivation by the perforate of laser beam drilling mode, the severity control in hole does not punch alumina passivation layer punching back side silicon nitride silicon passivation layer, then aluminium paste is printed, pass through sintering process, form alusil alloy with silicon chip after aluminium paste erodes alumina passivation layer, form good ohmic contact;
(2). the present invention has prepared silicon dioxide layer between front side silicon nitride silicon passivation layer and silicon chip, effectively can solve PERC solar cell potential inducing attenuation problem.
Accompanying drawing illustrates:
Fig. 1 is the structure chart of PERC solar cell of the present invention.
Embodiment:
Please refer to shown in Fig. 1, PERC solar cell of the present invention comprises silicon chip 1, be positioned at the silicon dioxide layer 2 of silicon chip 1 upper surface and silver layer 3, be positioned at the front side silicon nitride silicon passivation layer 4 of silicon dioxide layer 2 upper surface, be positioned at the alumina passivation layer 5 of silicon chip 1 lower surface, be positioned at the back side silicon nitride silicon passivation layer 6 of alumina passivation layer 5 lower surface, spaced apartly on silicon nitride passivation 6 be overleaf provided with several perforates 7, be filled with after eroding alumina passivation layer 5 in perforate 7 and silicon chip 1 forms the aluminium lamination 8 of alusil alloy.
Wherein perforate 7 extends in alumina passivation layer 5 after back side silicon nitride silicon passivation layer 6, and alumina passivation layer 5 is not punched in perforate 7.
The preparation method of PERC solar cell of the present invention, comprises the steps:
Step 1, upper surface applying silicon oxide layer 2 at silicon chip 1, at the upper surface plating front side silicon nitride silicon passivation layer 4 of silicon dioxide layer 2, at the lower surface plating alumina passivation layer 5 of silicon chip 1, at the lower surface plating back side silicon nitride silicon passivation layer 6 of alumina passivation layer 5;
By the perforate of laser beam drilling mode in step 2, overleaf silicon nitride passivation 6, wherein perforate extends in alumina passivation layer 5 after back side silicon nitride silicon passivation layer 6, and alumina passivation layer 5 is not punched in perforate;
Step 3, on the upper surface of silicon chip 1, printing silver slurry forms silver layer 3, overleaf silicon nitride passivation 6 prints aluminium paste and forms aluminium lamination 8, and wherein aluminium paste erodes after alumina passivation layer 5 and silicon chip 1 forms alusil alloy.
The present invention overleaf on silicon nitride passivation by the perforate of laser beam drilling mode, the severity control in hole does not punch alumina passivation layer punching back side silicon nitride silicon passivation layer, then aluminium paste is printed, pass through sintering process, form alusil alloy with silicon chip after aluminium paste erodes alumina passivation layer, form good ohmic contact.The present invention has prepared silicon dioxide layer between front side silicon nitride silicon passivation layer and silicon chip, effectively can solve PERC solar cell potential inducing attenuation problem.
The above is only the preferred embodiment of the present invention, it should be pointed out that for those skilled in the art, can also make some improvement under the premise without departing from the principles of the invention, and these improvement also should be considered as protection scope of the present invention.
Claims (3)
1. a PERC solar cell, it is characterized in that: comprise silicon chip (1), be positioned at silicon dioxide layer (2) and the silver layer (3) of silicon chip (1) upper surface, be positioned at the front side silicon nitride silicon passivation layer (4) of silicon dioxide layer (2) upper surface, be positioned at the alumina passivation layer (5) of silicon chip (1) lower surface, be positioned at the back side silicon nitride silicon passivation layer (6) of alumina passivation layer (5) lower surface, silicon nitride passivation (6) is above spaced apart is overleaf provided with several perforates (7), be filled with in perforate (7) and erode alumina passivation layer (5) forms alusil alloy afterwards aluminium lamination (8) with silicon chip (1).
2. PERC solar cell as claimed in claim 1, is characterized in that: described perforate (7) extends in alumina passivation layer (5) after back side silicon nitride silicon passivation layer (6).
3. a preparation method for PERC solar cell, is characterized in that: comprise the steps
Step 1, upper surface applying silicon oxide layer (2) at silicon chip (1), at upper surface plating front side silicon nitride silicon passivation layer (4) of silicon dioxide layer (2), at lower surface plating alumina passivation layer (5) of silicon chip (1), at lower surface plating back side silicon nitride silicon passivation layer (6) of alumina passivation layer (5);
By the perforate of laser beam drilling mode in step 2, overleaf silicon nitride passivation (6), wherein perforate extends in alumina passivation layer (5) after back side silicon nitride silicon passivation layer (6), and alumina passivation layer (5) is not punched in perforate;
Step 3, printing silver slurry formation silver layer (3) on the upper surface of silicon chip (1), silicon nitride passivation (6) upper printing aluminium paste forms aluminium lamination (8) overleaf, and wherein aluminium paste erodes alumina passivation layer (5) and forms alusil alloy with silicon chip (1) afterwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511023431.0A CN105470349A (en) | 2015-12-30 | 2015-12-30 | PERC solar cell and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201511023431.0A CN105470349A (en) | 2015-12-30 | 2015-12-30 | PERC solar cell and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105470349A true CN105470349A (en) | 2016-04-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201511023431.0A Pending CN105470349A (en) | 2015-12-30 | 2015-12-30 | PERC solar cell and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105470349A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653895A (en) * | 2016-12-30 | 2017-05-10 | 苏州阿特斯阳光电力科技有限公司 | Partially-doped crystalline silicon solar cell and preparation method therefor |
| WO2022242067A1 (en) | 2021-05-18 | 2022-11-24 | 横店集团东磁股份有限公司 | Perc battery back passivation structure, and perc battery and preparation method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120199202A1 (en) * | 2011-02-03 | 2012-08-09 | Katholieke Universiteit Leuven | Method for fabricating photovoltaic cells |
| CN104247033A (en) * | 2011-10-07 | 2014-12-24 | Imec公司 | Method of manufacturing a solar cell with local back contacts |
| CN205385035U (en) * | 2015-12-30 | 2016-07-13 | 无锡赛晶太阳能有限公司 | PERC solar cell |
-
2015
- 2015-12-30 CN CN201511023431.0A patent/CN105470349A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120199202A1 (en) * | 2011-02-03 | 2012-08-09 | Katholieke Universiteit Leuven | Method for fabricating photovoltaic cells |
| CN104247033A (en) * | 2011-10-07 | 2014-12-24 | Imec公司 | Method of manufacturing a solar cell with local back contacts |
| CN205385035U (en) * | 2015-12-30 | 2016-07-13 | 无锡赛晶太阳能有限公司 | PERC solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106653895A (en) * | 2016-12-30 | 2017-05-10 | 苏州阿特斯阳光电力科技有限公司 | Partially-doped crystalline silicon solar cell and preparation method therefor |
| WO2022242067A1 (en) | 2021-05-18 | 2022-11-24 | 横店集团东磁股份有限公司 | Perc battery back passivation structure, and perc battery and preparation method therefor |
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Application publication date: 20160406 |