CN105470322A - Solar cell, solar cell module, and manufacturing method of solar cell - Google Patents
Solar cell, solar cell module, and manufacturing method of solar cell Download PDFInfo
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- CN105470322A CN105470322A CN201410466355.XA CN201410466355A CN105470322A CN 105470322 A CN105470322 A CN 105470322A CN 201410466355 A CN201410466355 A CN 201410466355A CN 105470322 A CN105470322 A CN 105470322A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention provides a solar cell, a solar cell module, and the manufacturing method of the solar cell. The solar cell comprises a substrate, a first nature amorphous semiconductor layer, a second nature amorphous semiconductor layer, and a silicon nitride layer. The substrate has a first surface and a second surface which is opposite to the first surface. The first nature amorphous semiconductor layer and the second nature amorphous semiconductor layer are separated and are arranged on the second surface. The silicon nitride layer is arranged between the first nature amorphous semiconductor layer and the second nature amorphous semiconductor layer and is in direct contact with the second surface.
Description
Technical field
The invention relates to the field of heterojunction (heterojunction) solar cell, particularly about the heterojunction solar cell, solar energy module and preparation method thereof with back-contact electrode.
Background technology
Along with the expendable energy is day by day exhausted, the exploitation of the alternative energy sources such as solar energy has become the important developing direction in countries in the world, wherein, industry is devoted to the solar cell that exploitation has high conversion efficiency (conversionefficiency) and low cost of manufacture mostly.
In numerous high-effect solar cells, especially come into one's own with back-contact heterojunction (heterojunctionbackcontact, HBC) silicon solar cell.Generally speaking, the structure of back-contact heterojunction silicon solar cell comprises N-type crystalline silicon substrate, essence (intrinsic) amorphous silicon layer, P-type non-crystalline silicon layer, N-type non-crystalline silicon layer and electrode layer to I haven't seen you for ages.Specifically, intrinsic amorphous silicon layer can be respectively set at N-type crystalline silicon substrate on the front and back, and P-type non-crystalline silicon layer, N amorphous silicon layer and electrode layer then all can be arranged at the back side of N-type crystalline silicon substrate.Because the interface between silicon metal and amorphous silicon layer is heterojunction, and lighttight electrode layer is only arranged at the back side of solar cell, therefore back-contact heterojunction silicon solar cell can provide larger short circuit current (Isc), and then promotes integral battery door power output.
But above-mentioned back-contact heterojunction silicon solar cell still has the space of improvement.For example, the intrinsic amorphous silicon layer being arranged at the crystalline silicon substrate back side is generally pantostrat, cause the carrier produced in crystalline silicon substrate easily in intrinsic amorphous silicon layer, to produce compound (recombination), and reduce the open circuit voltage of solar cell.In addition, even if crystalline silicon substrate memory has internal electric field (built-infield), minority carrier in substrate still cannot drift to corresponding electrode effectively within its lifetime (lifetime), cause and add electronics electricity hole to compound probability, and result in the reduction of open circuit voltage.
In view of this, be necessary to provide a kind of back-contact heterojunction solar cell, to solve the defect be present in known technology.
Summary of the invention
An object of the present invention is to provide a kind of solar cell, to solve the defect be present in known technology.
Another object of the present invention is to provide a kind of solar module, it comprises the solar cell of improvement, to solve the defect be present in known technology.
Another object of the present invention is the manufacture method providing a kind of solar cell, and it can obtain the solar cell of improvement, to solve the defect be present in known technology.
According to above-mentioned purpose, one embodiment of the invention disclose a kind of solar cell.Solar cell at least comprises substrate, the first essential noncrystal semiconductor layer, the second essential noncrystal semiconductor layer and silicon nitride layer.Substrate has the first surface and second surface that are oppositely arranged.First essential noncrystal semiconductor layer is separated each other with the second essential noncrystal semiconductor layer and is all arranged on second surface.Silicon nitride layer is arranged at the first essential noncrystal semiconductor layer and the second essential amorphous semiconductor interlayer, and wherein silicon nitride layer directly contacts this second surface.
According to another embodiment of the present invention, a kind of solar module is disclosed.Solar module at least comprises header board, backboard, multiple solar cell and housing.Header board and backboard are oppositely arranged, and housing can be arranged at the periphery of header board and backboard.Solar cell is arranged between header board and backboard, and comprises substrate, the first essential noncrystal semiconductor layer, the second essential noncrystal semiconductor layer and silicon nitride layer separately.Furthermore, substrate has the first surface and second surface that are oppositely arranged.First essential noncrystal semiconductor layer is separated each other with the second essential noncrystal semiconductor layer and is all arranged on second surface.Silicon nitride layer is arranged at the first essential noncrystal semiconductor layer and the second essential amorphous semiconductor interlayer, and wherein silicon nitride layer directly contacts second surface.
According to still another embodiment of the invention, a kind of manufacture method of solar cell is disclosed.The manufacture method of solar cell comprises the following steps: first to provide substrate, and it has the first surface and second surface that are oppositely arranged.Deposit essential noncrystal semiconductor layer afterwards on the second surface of substrate.Continue to etch essential noncrystal semiconductor layer, to form groove in essential noncrystal semiconductor layer.Finally in groove, insert silicon nitride layer, wherein silicon nitride layer can the second surface of direct contact substrate.
Accompanying drawing explanation
Usually know that in order to make this area the knowledgeable can understand and implement the present invention, hereinafter will coordinate accompanying drawing, describe the manufacture method of solar cell of the present invention, solar module and solar cell in detail, wherein:
Fig. 1 is the vertical view according to one embodiment of the invention solar cell.
Fig. 2 is the solar cell profile that A-A ' tangent line illustrates in Fig. 1.
Fig. 3 corresponds to according to another embodiment of the present invention the solar cell profile that in Fig. 1, A-A ' tangent line illustrates.
Fig. 4 corresponds to according to further embodiment of this invention the solar cell profile that in Fig. 1, A-A ' tangent line illustrates.
Fig. 5 to Fig. 8 is method for manufacturing solar battery according to an embodiment of the invention.
Fig. 9 is the vertical view according to one embodiment of the invention solar module.
Figure 10 is the part sectioned view of Fig. 9 solar module.
Embodiment
It is noted that protection scope of the present invention is when being as the criterion of defining with accompanying right, but not be limited with the embodiment be exposed in hereafter.Therefore, under the situation without prejudice to invention spirit and scope of the present invention, when doing change to following embodiment and modify.In addition, for simplicity with clear for the purpose of, same or similar element or device represent with identical component symbol, and the known Structure and energy details of part can not be exposed in hereinafter.It is noted that accompanying drawing is for the purpose of description, completely not draw according to life size.
Please refer to Fig. 1 and Fig. 2, it depicts solar cell vertical view and the profile of the embodiment of the present invention respectively, and wherein Fig. 2 illustrated along Fig. 1 tangent line A-A '.As depicted in figs. 1 and 2, solar cell 100 at least comprises substrate 102, first essence (intrinsic) noncrystal semiconductor layer 120a, the second essential noncrystal semiconductor layer 120b and silicon nitride layer 122.Wherein, substrate 102 has the first conductivity type, is preferably as N-type, and it has the first surface 104 and second surface 106 that are oppositely arranged.First essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b is all arranged on second surface 106, and both are separated from one another, and better fourchette shape (interdigitated) layout presented as shown in Figure 1.Silicon nitride layer 122, composition main body is preferably amorphous silicon nitride (amorphoussiliconnitride, a-SiN), be arranged between the first essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b, and directly contact second surface 106.
Specifically, aforesaid substrate 102 is crystalline semiconductor substrate, such as, be polycrystalline silicon substrate or III-V substrate, be preferably as monocrystalline silicon substrate.First surface 104 is the main sensitive surfaces for accepting sunlight.The main body of the first essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b can be extrinsic semiconductor, be preferably as intrinsic amorphous silicon (intrinsicamorphoussilicon), it is in order to repair the defect be present on second surface 106.
Of the present invention one is characterised in that the first essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b is disconnected from each other.Feature thus, drifts to corresponding first essential noncrystal semiconductor layer 120a or the second essential noncrystal semiconductor layer 120b respectively once different electrical carrier, just can not compound again, thus can improve the open circuit voltage of solar cell 100.In addition, another feature of the present invention is amorphous silicon nitride layer 122 meeting passivation portion second surface 106, cause the interface 126 between amorphous silicon nitride layer 122 and second surface 106, or in the substrate of adjacent interface 126 102 or in amorphous silicon nitride layer 122, have accumulation of positive charges district 127.Because the electric charge in accumulation of positive charges district 127 is electrical and minority carrier (minoritycarriers) in N-type substrate 102, that is electric hole is electrically identical, therefore it not only can repel the electric hole drifted about toward second surface 106, caught by the defect (defects) on second surface 106 to prevent electric hole, it also can reduce the time of staying of electric hole in N-type substrate 102 simultaneously, and then improves the open circuit voltage of solar cell 100.
Above-mentioned solar cell 100 separately can comprise other elements.Still with reference to figure 2, for example, optionally sequentially stacking on the first essential noncrystal semiconductor layer 120a have the first noncrystal semiconductor layer 108, transparency conducting layer 112 and the first electrode 114.Optionally sequentially stacking on second essential noncrystal semiconductor layer 120b have the second noncrystal semiconductor layer 110, transparency conducting layer 112 and the second electrode 116.In this situation, amorphous silicon nitride layer 122 can be arranged between the first noncrystal semiconductor layer 108 and the second noncrystal semiconductor layer 110, and the end face of amorphous silicon nitride layer 122 is better trims with transparency conducting layer 112, but is not limited thereto.In addition, optionally sequentially stacking on the first surface 104 of substrate 102 have essential noncrystal semiconductor layer 118 and anti-reflecting layer 124.
Specifically, the composition main body of the first noncrystal semiconductor layer 108 and the second noncrystal semiconductor layer 110 can be all amorphous semiconductor, is preferably amorphous silicon, and both have different conductivity type, such as, there is the first conductivity type respectively, such as N-type, with the second conductivity type, such as P type, but be not limited thereto.Better, first noncrystal semiconductor layer 108 of the present embodiment and substrate 102 have identical conductivity type, such as N-type.First electrode 114 and the second electrode 116 can be conductivity preferably metal electrode, such as aluminium electrode or silver electrode, and electrically isolated from each other, to export the carrier of correspondence to external loading.In addition, transparency conducting layer 112 can be selected from transparent conductive oxide (transparentconductiveoxide, TCO) or other suitable Conductive inorganic things, to reduce series resistance further.Similarly, for the essential noncrystal semiconductor layer 118 on first surface 104, its main body can also be essential amorphous semiconductor, is preferably amorphous silicon, and it is in order to passivation first surface 104, to avoid carrier in first surface 104 compound.Anti-reflecting layer 124 can reduce the light reflectivity of first surface 104, and its composition composition is better identical with amorphous silicon nitride layer, such as, be amorphous silicon nitride, but be not limited to this.
Solar cell of the present invention, except above-described embodiment, separately can comprise other change types.Below, these change types will be described.It is noted that be roughly similar to the above embodiments due to the structure of following change type, only to be described with regard to Main Differences place therefore below, the reference and similar element and structure can be arranged in pairs or groups.
Fig. 3 corresponds to according to another embodiment of the present invention the solar cell profile that in Fig. 1, A-A ' tangent line illustrates.As shown in Figure 3, the embodiment of Fig. 3 and the embodiment Main Differences of above-mentioned Fig. 1 are, the amorphous silicon nitride layer 122 of the present embodiment conformably covers not by the second surface 106 that the first essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b covers, and the sidewall of essential noncrystal semiconductor layer 120a, the second essential noncrystal semiconductor layer 120b, the first noncrystal semiconductor layer 108, second noncrystal semiconductor layer 110 and transparency conducting layer 112.In other words, the amorphous silicon nitride layer 122 of the present embodiment can not fill up the groove (not shown) between the first noncrystal semiconductor layer 108 and the second noncrystal semiconductor layer 110.Nonetheless, still accumulation of positive charges district 127 can be had near the interface 126 between amorphous silicon nitride layer 122 and second surface 106.The solar cell 100 of the present embodiment is except amorphous silicon nitride layer 122 is for except compliance covers, the feature of all the other each parts, setting position and material behavior homogeneous phase are similar to above-described embodiment, therefore repeats no more at this.
Fig. 4 corresponds to according to further embodiment of this invention the solar cell profile that in Fig. 1, A-A ' tangent line illustrates.As shown in Figure 4, the embodiment of Fig. 4 and the embodiment Main Differences of above-mentioned Fig. 1 are, second surface 106 not all be positioned between the first essential noncrystal semiconductor layer 120a with the second essential noncrystal semiconductor layer 120b directly contacts amorphous silicon nitride layer 122.In other words, only portion second surface 106 directly contacts amorphous silicon nitride layer 122.Specifically, gap (void) 128 between second surface 106 and amorphous silicon nitride layer 122, can be had, cause the accumulation of positive charges district 127 of the present embodiment can be slightly less than the accumulation of positive charges district 127 of above-mentioned Fig. 1 embodiment.Better, the amorphous silicon nitride layer 122 of the present embodiment still can the sidewall of directly contact portion first noncrystal semiconductor layer 108 and part second noncrystal semiconductor layer 110, but is not limited to this.Furthermore, no matter the size dimension in gap 128 why, as long as have the region directly contacted between amorphous silicon nitride layer 122 with second surface 106, all belongs to the scope that the present embodiment is contained.The solar cell 100 of the present embodiment is except having except gap 128 between second surface 106 and amorphous silicon nitride layer 122, the feature of all the other each parts, setting position and material behavior homogeneous phase are similar to above-described embodiment, therefore repeats no more at this.
Usually know that in order to make this area the knowledgeable can implement the present invention, hereinafter will coordinate accompanying drawing, describe the manufacture method of solar cell of the present invention in detail.
Fig. 5 to Fig. 8 is method for manufacturing solar battery according to an embodiment of the invention.As shown in Figure 5, first provide substrate 102, such as polycrystalline silicon substrate or III-V substrate, be preferably as monocrystalline silicon N-type substrate, it has the first surface 104 and second surface 106 that are oppositely arranged.Then, implement chemical vapour deposition (CVD) (chemicalvapordeposition, CVD) technique or other appropriate process, deposit essential noncrystal semiconductor layer 118,120 respectively, such as intrinsic amorphous silicon layer, on first surface 104 and second surface 106.
As shown in Figure 6, then utilize chemical vapor deposition method or other appropriate process, first deposited overall P type noncrystal semiconductor layer 109, afterwards patterning P type noncrystal semiconductor layer 109 on second surface 106.Continue with deposited n-type noncrystal semiconductor layer 107, to cover P type noncrystal semiconductor layer 109 and essential noncrystal semiconductor layer 120.At this it is noted that the sedimentary sequence of P type noncrystal semiconductor layer 109 and N-type noncrystal semiconductor layer 107 is not defined in this, it can be exchanged according to different process demand.It is noted that this embodiment forms P type second noncrystal semiconductor layer 109 and N-type noncrystal semiconductor layer 107 with depositional mode, but the present invention is not limited thereto.For example, also first essential noncrystal semiconductor layer can be formed by depositing operation on second surface, again ion cloth is implemented to the zones of different of essential noncrystal semiconductor layer afterwards and plant technique, to form P type noncrystal semiconductor layer and N-type noncrystal semiconductor layer in corresponding region.
Afterwards, planarization and patterning N-type noncrystal semiconductor layer 107, and optionally deposit transparent conductive layer (not shown) on N-type noncrystal semiconductor layer 107.Then, one or multi-channel etch process can be implemented, such as laser-induced thermal etching, chemical bath etching or photoetching etching, sequentially etch transparency conducting layer, P type noncrystal semiconductor layer 109, N-type noncrystal semiconductor layer 107 and essential noncrystal semiconductor layer 120, and form groove in essential noncrystal semiconductor layer 120, and obtained similar structure as shown in Figure 7.As shown in Figure 7, groove 129 can be arranged at first and second essential between noncrystal semiconductor layer 120a, 120b, causes first and second essential noncrystal semiconductor layer 120a, 120b can have fourchette shape layout as shown in Figure 1.Preferably, the sidewall of first and second essential noncrystal semiconductor layer 120a, 120b can trim the sidewall of the first and second noncrystal semiconductor layers 108,110 respectively, but the present invention is not limited thereto.
As shown in Figure 8, implement deposition or coating process, to insert silicon nitride layer 122, be preferably amorphous silicon nitride layer, in groove 129, cause amorphous silicon nitride layer 122 directly to contact second surface 106 and to be formed.It is noted that in order to avoid admixture is in this process by thermal diffusion, is preferably and implements temperature lower than the low temperature deposition process of 200 DEG C to insert amorphous silicon nitride layer 122.Afterwards, optionally process deposition of antiglare layer 124 on first surface 104.At this it is noted that the material of anti-reflecting layer 124 can be same as the material of amorphous silicon nitride layer 122, such as, be amorphous silicon nitride, but be not limited to this.Continue to implement flatening process, cause amorphous silicon nitride layer 122 to trim transparency conducting layer 112.Finally, utilize wire mark or other suitable modes, transparency conducting layer 112 is formed the first electrode 114 and the second electrode 116.Now, because the first and second electrodes 114,116 correspond respectively to first and second essential noncrystal semiconductor layer 120a, 120b and arrange, therefore it also has fourchette shape layout as shown in Figure 1.Similarly, after inserting amorphous silicon nitride layer 122 to groove 129, between the interface 126 between amorphous silicon nitride layer 122 and second surface 106, spontaneously can produce accumulation of positive charges district 127.
The present invention also provides a kind of solar module, and it comprises the solar cell after above-mentioned improvement.Below in an example, described for the structure of solar module.
Please refer to Fig. 9 and Figure 10, its be the vertical view that illustrates according to one embodiment of the invention solar module respectively and profile.As shown in Figure 9 and Figure 10, solar module 150 comprises header board 140, backboard 142, multiple solar cell 100 and housing 132.Header board 140 and backboard 142 to be oppositely arranged and solar cell 100 is arranged between header board 140 and backboard 142.Housing 132 is the peripheries being arranged at header board 140 and backboard 142.
Specifically, each solar cell 100 is by conductive strips (ribbon) 130 series connection and/or parallel connection mutually.Also be provided with coating layer 144 between header board 140 and backboard 142, header board 140 is binded to backboard 142.Coating layer 144 also can fix solar cell 100 and conductive strips 130, avoids solar cell 100 directly to contact with the external world with conductive strips 130.The material of above-mentioned coating layer 144 can be high-molecular copolymer, such as ethylene/vinyl acetate copolymer (ethylene-vinylacetate, EVA) or ionomer (ionomer), but is not limited thereto.
Similarly, the solar cell 100 in solar module 150 has structure same as the previously described embodiments.Specifically, each solar cell 100 at least comprises the essential noncrystal semiconductor layer 120a of substrate 102, first, the second essential noncrystal semiconductor layer 120b and silicon nitride layer 122.Wherein, substrate 102 has the first surface 104 and second surface 106 that are oppositely arranged.First essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b is all arranged on second surface 106, and both are separated from one another, and the better layout presenting fourchette shape (interdigitated).The composition main body of silicon nitride layer 122 is preferably amorphous silicon nitride, and it is arranged between the first essential noncrystal semiconductor layer 120a and the second essential noncrystal semiconductor layer 120b, and directly contacts second surface 106.In addition, optionally sequentially stacking on the first essential noncrystal semiconductor layer 120a have the first noncrystal semiconductor layer 108, transparency conducting layer 112 and the first electrode 114.Optionally sequentially stacking on second essential noncrystal semiconductor layer 120b have the second noncrystal semiconductor layer 110, transparency conducting layer 112 and the second electrode 116.In addition, optionally sequentially stacking on the first surface 104 of substrate 102 have essential noncrystal semiconductor layer 118 and anti-reflecting layer 124.In addition, in order to provide different output voltages and electric current, each solar cell 100 in solar module 150 can suitably series, parallel or the two combine.
It is noted that the solar cell 100 of all embodiments in the present invention is not limited to one side by light type (monofacial), it also can be two-sided illuminated (bifacial).
In sum, the present invention is to provide the manufacture method of a kind of solar cell, solar module and solar cell.First essential noncrystal semiconductor layer and the second essential noncrystal semiconductor layer of solar cell are settings disconnected from each other, and the interface be positioned between amorphous silicon nitride layer and second surface can have accumulation of positive charges district.By above-mentioned feature, when the carrier that difference is electrical drifts to corresponding first essential noncrystal semiconductor layer or the second essential noncrystal semiconductor layer respectively, just can not compound again.In addition, the electric charge in accumulation of positive charges district can repel the electric hole toward second surface drift, and to prevent electric hole from being caught by the defect on second surface, it also can reduce the time of staying of electric hole in substrate simultaneously.Therefore, effectively can improve the open circuit voltage of solar cell, and then promote overall cell output.
The foregoing is only preferred embodiment of the present invention, all equalizations done according to the present patent application the scope of the claims change and modify, and all should belong to the covering scope of the claims in the present invention.
Claims (24)
1. a solar cell, comprising:
One substrate, has the first surface and a second surface that are oppositely arranged;
One first essential noncrystal semiconductor layer, is arranged on this second surface;
One second essential noncrystal semiconductor layer, is arranged on this second surface, wherein this second essential noncrystal semiconductor layer and this first essential noncrystal semiconductor layer disconnected from each other; And
One silicon nitride layer, be arranged at this first essential noncrystal semiconductor layer and this second essential amorphous semiconductor interlayer, wherein this silicon nitride layer directly contacts this second surface.
2. solar cell as claimed in claim 1, wherein this substrate is a crystalline semiconductor substrate.
3. solar cell as claimed in claim 1, wherein this first essential noncrystal semiconductor layer and this second essential noncrystal semiconductor layer present fourchette shape layout.
4. solar cell as claimed in claim 1, wherein the composition of this silicon nitride layer comprises amorphous silicon nitride.
5. solar cell as claimed in claim 1, wherein separately comprises an accumulation of positive charges district, is arranged at the interface between this silicon nitride layer and this second surface.
6. solar cell as claimed in claim 1, wherein separately comprise one first noncrystal semiconductor layer and one second noncrystal semiconductor layer, be arranged at respectively on this first essential noncrystal semiconductor layer and this second essential noncrystal semiconductor layer, this first noncrystal semiconductor layer and this second noncrystal semiconductor layer have different conductivity type.
7. solar cell as claimed in claim 6, wherein this substrate and this first noncrystal semiconductor layer have same conductivity.
8. solar cell as claimed in claim 6, wherein this silicon nitride layer is arranged at this first noncrystal semiconductor layer and this second amorphous semiconductor interlayer.
9. solar cell as claimed in claim 6, wherein separately comprises:
One first electrode, is arranged at the upper of this first noncrystal semiconductor layer; And
One second electrode, is arranged on this second noncrystal semiconductor layer, and wherein this second electrode is electrically isolated in this first electrode.
10. solar cell as claimed in claim 1, wherein separately comprises an essential noncrystal semiconductor layer, is arranged on this first surface.
11. solar cells as claimed in claim 1, wherein separately comprise an anti-reflecting layer, are arranged on this first surface, and wherein this anti-reflecting layer and this silicon nitride layer have identical composition to form.
12. 1 kinds of solar modules, comprising:
One header board;
One backboard, is oppositely arranged with this header board;
Multiple solar cell, be arranged between this header board and this backboard, respectively this solar cell comprises:
One substrate, has the first surface and a second surface that are oppositely arranged;
One first essential noncrystal semiconductor layer, arranges on this second surface;
One second essential noncrystal semiconductor layer, arranges on this second surface, wherein this essential second noncrystal semiconductor layer and this first noncrystal semiconductor layer disconnected from each other; And
One silicon nitride layer, be arranged at this first noncrystal semiconductor layer and this second amorphous semiconductor interlayer, wherein this silicon nitride layer directly contacts this second surface; And
One housing, is arranged at the periphery of this header board and this backboard.
13. solar modules as claimed in claim 12, wherein the composition of this silicon nitride layer comprises amorphous silicon nitride.
14. solar modules as claimed in claim 12, wherein separately comprise an accumulation of positive charges district, are arranged at the interface between this amorphous silicon nitride layer and this second surface.
15. solar modules as claimed in claim 12, wherein separately comprise one first noncrystal semiconductor layer and the second noncrystal semiconductor layer, be arranged at respectively on this first essential noncrystal semiconductor layer and this second essential noncrystal semiconductor layer, this first noncrystal semiconductor layer and this second noncrystal semiconductor layer have different conductivity type.
16. solar energy modules as claimed in claim 15, wherein this substrate and this first noncrystal semiconductor layer have same conductivity.
17. solar modules as claimed in claim 15, wherein this silicon nitride layer is arranged at this first noncrystal semiconductor layer and this second amorphous semiconductor interlayer.
18. solar cell batteries as claimed in claim 12, wherein separately comprise an anti-reflecting layer, are arranged on this first surface, and wherein this anti-reflecting layer and this silicon nitride layer have identical composition and form.
19. 1 kinds of method for manufacturing solar battery, comprising:
One substrate is provided, there is the first surface and a second surface that are oppositely arranged;
Deposit a noncrystal semiconductor layer on this second surface;
Etch this essential noncrystal semiconductor layer, to form a groove in this essential noncrystal semiconductor layer; And
Insert a silicon nitride layer in this groove, wherein this silicon nitride layer directly contacts this second surface.
20. method for manufacturing solar battery as claimed in claim 19, wherein the composition of this silicon nitride layer comprises amorphous silicon nitride.
21. method for manufacturing solar battery as claimed in claim 19, be wherein utilize a low temperature deposition process to insert this silicon nitride layer in this groove, the temperature of this low temperature deposition process is lower than 200 DEG C.
22. method for manufacturing solar battery as claimed in claim 19, wherein after inserting this silicon nitride layer to this groove, positive charge can accumulate on the interface between this silicon nitride layer and this second surface, and produces an accumulation of positive charges district in this interface.
23. method for manufacturing solar battery as claimed in claim 19, wherein after this essential noncrystal semiconductor layer of etching, can form one first essential noncrystal semiconductor layer separated from one another and one second essential noncrystal semiconductor layer.
24. method for manufacturing solar battery as claimed in claim 19, wherein separately be included on this essential noncrystal semiconductor layer and form one first noncrystal semiconductor layer and one second noncrystal semiconductor layer respectively, wherein this first noncrystal semiconductor layer is electrically isolated in this second noncrystal semiconductor layer, and this first noncrystal semiconductor layer and this second noncrystal semiconductor layer have different conductivity type.
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Application publication date: 20160406 |