CN105469914A - Device utilizing electric field force to drive orientation of nano particles in thin film materials - Google Patents

Device utilizing electric field force to drive orientation of nano particles in thin film materials Download PDF

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Publication number
CN105469914A
CN105469914A CN201510797401.9A CN201510797401A CN105469914A CN 105469914 A CN105469914 A CN 105469914A CN 201510797401 A CN201510797401 A CN 201510797401A CN 105469914 A CN105469914 A CN 105469914A
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China
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electrode
ground electrode
field
electric field
ground
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CN201510797401.9A
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CN105469914B (en
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尹朋博
胡伟
谢雄杰
许佐明
罗晓庆
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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State Grid Corp of China SGCC
China Electric Power Research Institute Co Ltd CEPRI
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B19/00Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009Forming specific nanostructures
    • B82B3/0028Forming specific nanostructures comprising elements which are movable in relation to each other, e.g. slidable or rotatable
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/008Processes for improving the physical properties of a device

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The invention provides a device utilizing electric field force to drive orientation of nano particles in a thin film material. The device comprises a first high voltage electrode, a second high voltage electrode, a first ground electrode and a second ground electrode, wherein the first high voltage electrode and the first ground electrode are parallelly arranged to form a first electrode, the second high voltage electrode and the second ground electrode are parallelly arranged to form a second electrode, and the first electrode and the second electrode are symmetrically arranged from up to down. Through the device, the boundary electric field of the flat electrode is utilized, positive and negative electrode boards are arranged in a staggered mode, the direction of the electric field is in parallel with the electric field on the surface of the electrode, the upper and lower electrode boards are arranged symmetrically, flatness of the electric field is higher, and the thin film material is placed in a sample room and bears electric field force in parallel with the surface of the electrode, namely, the length direction of the film material. The device has properties of simple structure and low cost, is applicable to laboratory science researches and is further applicable to industrial production of high orientation degree films.

Description

A kind of device utilizing electric field force to drive nano particle orientation in thin-film material
Technical field
The present invention relates to the nano modification technical field of thin-film material, be specifically related to a kind of device utilizing electric field force to drive nano particle orientation in thin-film material.
Background technology
The dispersity of nano particle directly determines the performance of nano composite material, numerous experts and scholars study and find that nano particle directional profile can make composite material possess extremely excellent optical property, mechanical performance and electric property in particular directions, these performances be common nano composite material incomparable.For reaching this purpose, adopt the shaping method of machining traditionally, i.e. material cooling forming under the effect of shear stress or tensile stress, this method is widely used.Recent two decades is along with the development of technology, electric field force becomes the method for another kind of new particle orientation after flow orientation and stretch orientation gradually, numerous foreign study person imposes DC electric field or AC field in the polymer of molten state, achieve nano particle, such as carbon nano-tube, ceramic particle, graphite microchip, imvite etc., orientation in polymeric matrix, and Measurement and analysis new material is each to performance.
The patent " apparatus and method for electric field induce imvite orientations in polyethylene " (patent No. is 102831992) that such as on August 13rd, 2012 announces, describes electric field induce aligning device.Wherein top electrode connects high pressure, bottom electrode ground connection, and two electrodes are positioned opposite, and thin-film material is as in the middle of upper/lower electrode, and the electric field force direction therefore in material suffered by nano particle is parallel thickness direction.But for solving the difficult problem in experiment and engineering, a lot of situation is it is desirable that be parallel to the electric field of thin-film material length direction, and prior art equipment is all mainly that field parallel is in thickness direction.
Summary of the invention
In order to meet the needs of prior art, the invention provides a kind of device utilizing electric field force to drive nano particle orientation in thin-film material.
Technical scheme of the present invention is:
Described device comprises the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
Described first high-field electrode and the first ground electrode composition first arranged in parallel electrode; Described second high-field electrode and the second ground electrode be composition second electrode arranged in parallel also; Described first electrode and the second electrode are arranged symmetrically with up and down;
Described first high-voltage motor and the first ground electrode adopt mortise and tenon formula to be connected, and described second high-voltage motor and the second ground electrode also adopt mortise and tenon formula to be connected.
Preferably, described first high-field electrode and the second high-field electrode are semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged; Described first high-field electrode and the second high-field electrode are equipped with high-pressure stage leading-out terminal;
Described first ground electrode and the second ground electrode are also semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged; Described first ground electrode and the second ground electrode are equipped with ground electrode leading-out terminal;
Described first electrode forms disk by the first high-field electrode and the first ground electrode; Described second electrode forms disk by the second high-field electrode and the second ground electrode; The equal diameters of the first electrode and the second electrode discs;
Preferably, described first high-field electrode and the second high-field electrode are semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged; Described first ground electrode and the second ground electrode are also semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged;
The diameter of described semicircle copper plate is 120mm, and thickness is 5 ~ 10mm; The length of described bonding jumper is 70mm, and width is 0.1mm, and the spacing of adjacent two bonding jumpers is 2mm;
Preferably, chamfered is carried out to the edge of described first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
Preferably, described first electrode and the second electrode are arranged symmetrically with the space of formation is up and down the sample room of placing thin-film material;
Preferably, described first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode injection moulding are in epoxy resin or immersion insulating oil;
Preferably, the first high-field electrode, the second high-field electrode, the first ground electrode and the edge of the second ground electrode and the distance of sample room are less than 100 μm.
Compared with immediate prior art, excellent effect of the present invention is:
A kind of device utilizing electric field force to drive nano particle orientation in thin-film material provided by the invention, utilize the boundary electric field of plate electrode, both positive and negative polarity is staggered, direction of an electric field is parallel to the electric field of electrode surface, and upper bottom crown symmetric arrays, make the depth of parallelism of electric field higher, thin-film material is placed in sample room, the electric field force of parallel thin membrane material length direction will be subject to, fill up conventional art blank.And this apparatus structure is simple, cheap, may be used for laboratory science research, also may be used for film with high orientation degree industrial production.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1: a kind of structural representation utilizing electric field force to drive the device of nano particle orientation in thin-film material in the embodiment of the present invention;
Fig. 2: ground electrode structural representation in the embodiment of the present invention;
Fig. 3: embodiment of the present invention mesohigh electrode structure schematic diagram;
Fig. 4: the profile of ground electrode and high-field electrode in the embodiment of the present invention;
Fig. 5: the Electric Field Distribution simulation result schematic diagram of electrode surface in the embodiment of the present invention;
Wherein, 1: high-pressure stage leading-out terminal; 2: the first high-field electrodes; 3: the first ground electrodes; 4: ground point pole leading-out terminal; 5: the second high-field electrodes; 6: the second ground electrodes.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
A kind of embodiment utilizing electric field force to drive the device of nano particle orientation in thin-film material provided by the invention as shown in Figure 1, is specially:
In the present embodiment, this nano particle aligning device comprises the first high-field electrode 2, second high-field electrode 5, first ground electrode 3 and the second ground electrode 6.Wherein,
First high-field electrode 2 and the first ground electrode 3 composition first arranged in parallel electrode;
Second high-field electrode 5 and the second ground electrode 6 composition second arranged in parallel electrode;
First high-voltage motor and the first ground electrode adopt mortise and tenon formula to be connected, and the second high-voltage motor and the second ground electrode also adopt mortise and tenon formula to be connected.
First electrode and the second electrode are arranged symmetrically with up and down, and the space that the first electrode and the second electrode are arranged symmetrically with formation is up and down the sample room of placing thin-film material, and electrode is arranged symmetrically with up and down can increase the depth of parallelism of electric field line in sample room.Wherein, the Electric Field Distribution simulation result of electrode surface as shown in Figure 5.
1, the first high-field electrode and the second high-field electrode
As shown in Figure 3, the first high-field electrode and the second high-field electrode are semicircle copper plate, and the middle part of this semicircle copper plate is provided with the bonding jumper equidistantly arranged; First high-field electrode and the second high-field electrode are equipped with high-pressure stage leading-out terminal 1.
In the present embodiment, the diameter of semicircle copper plate is 120mm, and thickness is 5 ~ 10mm; The length of bonding jumper is 70mm, and width is 0.1mm, and the spacing of adjacent two bonding jumpers is 2mm.And carry out chamfered to the edge of the first high-field electrode and the second high-field electrode, thus the electric field reduced under high voltage is concentrated and partial discharge.
2, the first ground electrode and the second ground electrode
As shown in Figure 2, the first ground electrode and the second ground electrode are semicircle copper plate, and the middle part of this semicircle copper plate is provided with the bonding jumper equidistantly arranged; First ground electrode and the second ground electrode are equipped with ground electrode leading-out terminal 4.
In the present embodiment, the diameter of semicircle copper plate is 120mm, and thickness is 5 ~ 10mm; The length of bonding jumper is 70mm, and width is 0.1mm, and the spacing of adjacent two bonding jumpers is 2mm.And carry out chamfered to the edge of the first ground electrode and the second ground electrode, thus the electric field reduced under high voltage is concentrated and partial discharge.
The profile of the first high-field electrode 2, second high-field electrode 5, first ground electrode 3 and the second ground electrode 6 all as shown in Figure 4.
In the present invention, the first electrode and the second electrode are the disk of equal diameters, first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode injection moulding are in epoxy resin or soluble poly tetrafluoroethene, now, the first high-field electrode, the second high-field electrode, the first ground electrode and the edge of the second ground electrode and the distance of sample room are less than 100 μm.
Or the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode are immersed in insulating oil, in the present embodiment, insulating oil can adopt transformer oil, cable oil or silicone oil.
The basis material adopting the thin-film material of nano particle aligning device provided by the invention can be polyethylene, polypropylene, polyvinyl chloride, epoxy resin etc., and nano particle can be carbon fiber, carbon nano-tube, imvite etc.
Finally should be noted that: described embodiment is only some embodiments of the present application, instead of whole embodiments.Based on the embodiment in the application, spectrum logical technical staff in this area is not making the every other embodiment obtained under creative work prerequisite, all belongs to the scope of the application's protection.

Claims (7)

1. utilize electric field force to drive a device for nano particle orientation in thin-film material, it is characterized in that, described device comprises the first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode;
Described first high-field electrode and the first ground electrode composition first arranged in parallel electrode; Described second high-field electrode and the second ground electrode be composition second electrode arranged in parallel also; Described first electrode and the second electrode are arranged symmetrically with up and down;
Described first high-voltage motor and the first ground electrode adopt mortise and tenon formula to be connected, and described second high-voltage motor and the second ground electrode also adopt mortise and tenon formula to be connected.
2. a kind of device utilizing electric field force to drive nano particle orientation in thin-film material as claimed in claim 1, it is characterized in that, described first high-field electrode and the second high-field electrode are semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged; Described first high-field electrode and the second high-field electrode are equipped with high-pressure stage leading-out terminal;
Described first ground electrode and the second ground electrode are also semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged; Described first ground electrode and the second ground electrode are equipped with ground electrode leading-out terminal;
Described first electrode forms disk by the first high-field electrode and the first ground electrode; Described second electrode forms disk by the second high-field electrode and the second ground electrode; The equal diameters of the first electrode and the second electrode discs.
3. a kind of device utilizing electric field force to drive nano particle orientation in thin-film material as claimed in claim 1, it is characterized in that, described first high-field electrode and the second high-field electrode are semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged; Described first ground electrode and the second ground electrode are also semicircle copper plate; The middle part of described semicircle copper plate is provided with the bonding jumper equidistantly arranged;
The diameter of described semicircle copper plate is 120mm, and thickness is 5 ~ 10mm; The length of described bonding jumper is 70mm, and width is 0.1mm, and the spacing of adjacent two bonding jumpers is 2mm.
4. a kind of device utilizing electric field force to drive nano particle orientation in thin-film material as claimed in claim 1, is characterized in that, carry out chamfered to the edge of described first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode.
5. a kind of device utilizing electric field force to drive nano particle orientation in thin-film material as claimed in claim 1, it is characterized in that, the space that described first electrode and the second electrode are arranged symmetrically with formation is up and down the sample room of placing thin-film material.
6. a kind of device utilizing electric field force to drive nano particle orientation in thin-film material as claimed in claim 1, it is characterized in that, described first high-field electrode, the second high-field electrode, the first ground electrode and the second ground electrode injection moulding are in epoxy resin or impregnated in insulating oil.
7. a kind of device utilizing electric field force to drive nano particle orientation in thin-film material as described in claim 5 or 6, it is characterized in that, the first high-field electrode, the second high-field electrode, the first ground electrode and the edge of the second ground electrode and the distance of sample room are less than 100 μm.
CN201510797401.9A 2015-11-18 2015-11-18 It is a kind of that the device that nano-particle is orientated in thin-film material is driven using electric field force Active CN105469914B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107511910A (en) * 2017-07-24 2017-12-26 佛山科学技术学院 A kind of soft ceramic manufacture method of graphene
CN112652819A (en) * 2020-09-07 2021-04-13 上海大学 Mold and method for preparing polymer composite solid electrolyte by electric field induced orientation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1690773A (en) * 2003-12-22 2005-11-02 夏普株式会社 Display unit and display device
US20080032490A1 (en) * 2000-03-22 2008-02-07 University Of Massachusetts Nanocylinder arrays
CN102831992A (en) * 2012-08-13 2012-12-19 重庆大学 Device and method for inducing orientation arrangement of montmorillonoid in polyethylene by using electric field
CN103956311A (en) * 2014-05-16 2014-07-30 厦门大学 Charged particle beam trajectory control device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080032490A1 (en) * 2000-03-22 2008-02-07 University Of Massachusetts Nanocylinder arrays
CN1690773A (en) * 2003-12-22 2005-11-02 夏普株式会社 Display unit and display device
CN102831992A (en) * 2012-08-13 2012-12-19 重庆大学 Device and method for inducing orientation arrangement of montmorillonoid in polyethylene by using electric field
CN103956311A (en) * 2014-05-16 2014-07-30 厦门大学 Charged particle beam trajectory control device

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Title
王海泉,等: "电场诱导粒子取向排列的研究进展", 《华侨大学学报》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107511910A (en) * 2017-07-24 2017-12-26 佛山科学技术学院 A kind of soft ceramic manufacture method of graphene
CN112652819A (en) * 2020-09-07 2021-04-13 上海大学 Mold and method for preparing polymer composite solid electrolyte by electric field induced orientation

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