CN105467782A - Glue cleaning liquid and preparation method therefor - Google Patents
Glue cleaning liquid and preparation method therefor Download PDFInfo
- Publication number
- CN105467782A CN105467782A CN201510929529.6A CN201510929529A CN105467782A CN 105467782 A CN105467782 A CN 105467782A CN 201510929529 A CN201510929529 A CN 201510929529A CN 105467782 A CN105467782 A CN 105467782A
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- CN
- China
- Prior art keywords
- liquid
- parts
- glue
- cleaning liquid
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a glue cleaning liquid. The glue cleaning liquid comprises, in parts by weight, 10-20 parts of inorganic base, 5-10 parts of rosin water, 0.2-0.6 parts of terpilenol, 1.2-1.6 parts of ethylene glycol monomethyl ether, 4-8 parts of glycerin and 6-10 parts of de-ionized water. The glue cleaning liquid has the beneficial effects that a prepared glue cleaner is mild in nature, can be suitable for most colloids and mediums, and is short in glue cleaning time and good in effect; and due to the addition of glycerin, the activity and oxidation resistance of the glue cleaner can be improved and the storage time of the glue cleaner can be prolonged.
Description
Technical field
The present invention relates to cleaning agent for semiconductor industry field, particularly relate to one and to remove photoresist liquid and preparation method thereof.
Background technology
In semiconductor devices production run, photoetching is absolutely necessary an important step, and photoetching is that photosensitive printing image and selective chemical corrode the complex art combined.Photoetching process mainly comprises gluing, exposure, development, corrode and the step such as to remove photoresist, and the quality of lithographic results is relevant with each step in technological process.Gluing is that photoresist (i.e. photoresist, photoresist is generally called in the present invention) is coated in silicon chip surface, then exposes; For negative photoresist, be solubility before its exposure, photochemical reaction occur after seeing light and forms insoluble polymer substance; After development, corrosion, photoresist completes the task that on protection substrate, some part is not corroded, and will be eliminated, and namely remove photoresist, if this layer photoetching glue is removed totally will directly not affect yield rate and the product quality of silicon planar device and integrated circuit.
The existing method of removing photoresist has oxidizing process to remove photoresist, the decomposition of removing of photoresist by plasma, ultraviolet light is removed photoresist and glue-dispenser (also claiming stripper) removes photoresist.Removing of photoresist by plasma and ultraviolet light decomposition are removed photoresist, and equipment investment is large, and work efficiency is low; Oxidizing process is removed photoresist and need be boiled with strong acid and strong bases such as concentrated sulphuric acid red fuming nitric acid (RFNA)s, operational hazards, contaminated environment.Glue-dispenser removes photoresist to be needed to adopt different formulas for different colloids, does not have a kind of glue-dispenser that can be general.
Summary of the invention
The technical problem to be solved in the present invention is the many disadvantages that existing method of removing photoresist exists, and provides one to remove photoresist liquid and preparation method thereof for this reason.
Technical scheme of the present invention is: one is removed photoresist liquid, and it comprises by weight: 10-20 part inorganic base, 5-10 part rosin, 0.2-0.6 part terpinol, 1.2-1.6 part glycol monoethyl ether, 4-8 part glycerine and 6-10 part deionized water.
A preparation method for lens cleaning solution, it comprises the following steps: (1), by 10-20 part inorganic base and 5-10 part rosin mixing and stirring, and after being heated to 35-45 DEG C, insulation forms just liquid A; (2), by load after 0.2-0.6 part terpinol and the mixing of 1.2-1.6 part glycol monoethyl ether test tube first shake 3-5min more centrifugal 10-20min form just liquid B, concussion frequency is 20-30t/min.Centrifugal rotational speed is 40-50r/min; (3) add 4-8 part glycerine after being incubated 10-14min at, first liquid A and first liquid B being blended in 20-30 DEG C and form rear liquid; (4) add after, 6-10 part deionized water being condensed to 6-10 DEG C after rear liquid stirs and leave standstill.
The invention has the beneficial effects as follows that obtained glue-dispenser character is gentle, go for most of colloid and medium, the time of removing photoresist is short, effective, owing to adding glycerine, can improve activity and the oxidation resistance of glue-dispenser, extend its storage time.
Embodiment
Below in conjunction with embodiment, the present invention will be further described.
Embodiment 1: one is removed photoresist liquid, and it comprises by weight: 10 parts of inorganic bases, 5 parts of rosin, 0.2 part of terpinol, 1.2 parts of glycol monoethyl ethers, 4 parts of glycerine and 6 parts of deionized waters.
A preparation method for lens cleaning solution, it comprises the following steps: (1), by 10 parts of inorganic bases and 5 parts of rosin mixing and stirring, and after being heated to 35 DEG C, insulation forms just liquid A; (2), by load after 0.2 part of terpinol and the mixing of 1.2 parts of glycol monoethyl ethers test tube first shake 3min more centrifugal 10min form just liquid B, concussion frequency is 20t/min.Centrifugal rotational speed is 40r/min; (3) add 4 parts of glycerine after being incubated 10min at, first liquid A and first liquid B being blended in 20 DEG C and form rear liquid; (4) add after, 6 parts of deionized waters being condensed to 6 DEG C after rear liquid stirs and leave standstill.
Embodiment 2: one is removed photoresist liquid, and it comprises by weight: 15 parts of inorganic bases, 8 parts of rosin, 0.4 part of terpinol, 1.4 parts of glycol monoethyl ethers, 6 parts of glycerine and 8 parts of deionized waters.
A preparation method for lens cleaning solution, it comprises the following steps: (1), by 15 parts of inorganic bases and 8 parts of rosin mixing and stirring, and after being heated to 40 DEG C, insulation forms just liquid A; (2), by load after 0.4 part of terpinol and the mixing of 1.4 parts of glycol monoethyl ethers test tube first shake 4min more centrifugal 15min form just liquid B, concussion frequency is 25t/min.Centrifugal rotational speed is 45r/min; (3) add 6 parts of glycerine after being incubated 12min at, first liquid A and first liquid B being blended in 25 DEG C and form rear liquid; (4) add after, 8 parts of deionized waters being condensed to 8 DEG C after rear liquid stirs and leave standstill.
Embodiment 3: one is removed photoresist liquid, and it comprises by weight: 20 parts of inorganic bases, 10 parts of rosin, 0.6 part of terpinol, 1.6 parts of glycol monoethyl ethers, 8 parts of glycerine and 10 parts of deionized waters.
A preparation method for lens cleaning solution, it comprises the following steps: (1), by 20 parts of inorganic bases and 10 parts of rosin mixing and stirring, and after being heated to 45 DEG C, insulation forms just liquid A; (2), by load after 0.6 part of terpinol and the mixing of 1.6 parts of glycol monoethyl ethers test tube first shake 5min more centrifugal 20min form just liquid B, concussion frequency is 30t/min.Centrifugal rotational speed is 50r/min; (3) add 8 parts of glycerine after being incubated 14min at, first liquid A and first liquid B being blended in 30 DEG C and form rear liquid; (4) add after, 10 parts of deionized waters being condensed to 10 DEG C after rear liquid stirs and leave standstill.
The present invention contains inorganic base, rosin, terpinol and glycol monoethyl ether first liquid A obtained after step (1) and (2) and first liquid B and may be used for dissolving the positivity on various semiconductor and negative photoresist, the glycerine added can improve activity and the oxidation resistance of glue-dispenser, ensure its stability, extend its storage time.
Claims (3)
1. remove photoresist a liquid, it is characterized in that it comprises by weight: 10-20 part inorganic base, 5-10 part rosin, 0.2-0.6 part terpinol, 1.2-1.6 part glycol monoethyl ether, 4-8 part glycerine and 6-10 part deionized water.
2. the preparation method of a kind of lens cleaning solution as claimed in claim 1, is characterized in that it comprises the following steps: (1), by 10-20 part inorganic base and 5-10 part rosin mixing and stirring, and after being heated to 35-45 DEG C, insulation forms just liquid A; (2), by load after 0.2-0.6 part terpinol and the mixing of 1.2-1.6 part glycol monoethyl ether test tube first shake 3-5min more centrifugal 10-20min form just liquid B, concussion frequency is 20-30t/min.
3. centrifugal rotational speed is 40-50r/min; (3) add 4-8 part glycerine after being incubated 10-14min at, first liquid A and first liquid B being blended in 20-30 DEG C and form rear liquid; (4) add after, 6-10 part deionized water being condensed to 6-10 DEG C after rear liquid stirs and leave standstill.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510929529.6A CN105467782A (en) | 2015-12-15 | 2015-12-15 | Glue cleaning liquid and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510929529.6A CN105467782A (en) | 2015-12-15 | 2015-12-15 | Glue cleaning liquid and preparation method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105467782A true CN105467782A (en) | 2016-04-06 |
Family
ID=55605620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510929529.6A Pending CN105467782A (en) | 2015-12-15 | 2015-12-15 | Glue cleaning liquid and preparation method therefor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105467782A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112680287A (en) * | 2020-12-22 | 2021-04-20 | 青岛科金电子材料有限公司 | Glue-removing and softening integrated low-temperature deburring liquid for surface-mounted diodes |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339127A (en) * | 1976-09-21 | 1978-04-10 | Fuji Yakuhin Kogyo Kk | Photo resist frilling agent |
| WO2008058460A1 (en) * | 2006-11-17 | 2008-05-22 | Anji Microelectronics (Shanghai) Co., Ltd. | A low etching property cleaning solution for thicker photoresist |
| CN102854761A (en) * | 2012-08-08 | 2013-01-02 | 华灿光电股份有限公司 | Solution and method for removing photoresist after etching |
-
2015
- 2015-12-15 CN CN201510929529.6A patent/CN105467782A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5339127A (en) * | 1976-09-21 | 1978-04-10 | Fuji Yakuhin Kogyo Kk | Photo resist frilling agent |
| WO2008058460A1 (en) * | 2006-11-17 | 2008-05-22 | Anji Microelectronics (Shanghai) Co., Ltd. | A low etching property cleaning solution for thicker photoresist |
| CN102854761A (en) * | 2012-08-08 | 2013-01-02 | 华灿光电股份有限公司 | Solution and method for removing photoresist after etching |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112680287A (en) * | 2020-12-22 | 2021-04-20 | 青岛科金电子材料有限公司 | Glue-removing and softening integrated low-temperature deburring liquid for surface-mounted diodes |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160406 |