CN105467781B - A kind of mark and alignment methods with focusing and slant correction design - Google Patents

A kind of mark and alignment methods with focusing and slant correction design Download PDF

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Publication number
CN105467781B
CN105467781B CN201410456314.2A CN201410456314A CN105467781B CN 105467781 B CN105467781 B CN 105467781B CN 201410456314 A CN201410456314 A CN 201410456314A CN 105467781 B CN105467781 B CN 105467781B
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mark
focusing
focal plane
alignment
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CN105467781A (en
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杜荣
陈跃飞
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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Priority to CN201410456314.2A priority Critical patent/CN105467781B/en
Priority to JP2017513477A priority patent/JP6309694B2/en
Priority to SG11201701903QA priority patent/SG11201701903QA/en
Priority to PCT/CN2015/089167 priority patent/WO2016037562A1/en
Priority to KR1020177008904A priority patent/KR101948906B1/en
Priority to TW104129780A priority patent/TWI585513B/en
Publication of CN105467781A publication Critical patent/CN105467781A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation

Abstract

The invention discloses a kind of mark and alignment methods with focusing and slant correction design, the mark includes alignment mark and at least one pair of focusing mark, the alignment mark is centrally located on any midpoint to focusing mark line, any both sides that the alignment mark is symmetrical with to the focusing mark center, the alignment mark is that cross phenotypic marker or rice font mark, the focusing is labeled as diamond type focusing mark or grating type focusing mark, the line width of the alignment mark is more than discretization granularity, the line width of the alignment mark is more than twice of PSF width, present invention also offers the alignment methods applied to the mark, realize the high-precision focusing and leveling of alignment mark.Compared with prior art, mark provided by the invention eliminates the influence tilted to mark while focusing, improves measurement repdocutbility；In addition, analyzing distortion to measuring the Influencing Mechanism of repdocutbility, and the qualifications to mark width are given, further increasing measurement repdocutbility.

Description

A kind of mark and alignment methods with focusing and slant correction design
Technical field
It is especially a kind of to include pair the present invention relates to a kind of mark and alignment methods with focusing and slant correction design Fiducial mark remembers and the mark and its alignment methods of at least one pair of focusing mark.
Background technology
In ic manufacturing process, a complete chip usually requires to have made by multiple photolithographic exposure Into.In addition to first layer photoetching, the photoetching of remaining level before exposure will stay the figure of the level and the exposure of former level Under figure (mark) be accurately positioned, so just can guarantee that between each layer pattern there is correct relative position, that is, cover Carve precision.
In the prior art, based on optical imaging concept it is one of the system commonly used in litho machine to Barebone, such as Nikon FIA systems, Ultratec MVS etc..FIA marking style is single, as shown in Figure 1.Ultratec MVS have mark Learning functionality, mark no fixed form.In addition, US6344698B2 and CN102103336 consider influence of the technique to mark, And separately design by the less mark of technogenic influence.
In fact, in addition to technogenic influence measurement accuracy, also many factors can influence measurement accuracy.
First, distortion is a kind of common aberration, in optical imaging systems, distorts and the influence for measuring repdocutbility is not allowed Ignore.Its Influencing Mechanism is locational uncertainty of the measurement markers in visual field and the Non-linear coupling of distortion, to influence to measure Repdocutbility, as shown in Figure 2.Although FIA systems are measured in a certain fixed position all the time by successive ignition so as to mark, subtract The light influence of distortion, but iteration needs to consume the substantial amounts of time.
Secondly, as shown in figure 3, the defocus gap tilt effect of mark can also influence to measure repdocutbility, measured object inclination angle a can be produced Raw error D.Although the focusing and leveling system in litho machine can realize the correction tilted with defocus, because focusing and leveling measures Face is photoresist upper surface, and alignment mark is located at photoresist lower surface sometimes, and the thickness of photoresist has certain fluctuation, Therefore focusing and leveling system is also not enough to realize the high-precision focusing and leveling of alignment mark.
In addition, in optical imaging systems, although technology of auto extensive use in alignment sensor, Realize that the sensor of slant correction is not invented also while automatic focusing.
The content of the invention
It is an object of the invention to provide a kind of mark and alignment methods with focusing and slant correction design, the mark Note includes alignment mark and at least one pair of focusing mark, for eliminating the influence tilted to mark while focusing, drops simultaneously Influence of the low distortion to mark.
In order to achieve the above object, the invention provides a kind of mark with focusing and slant correction design, including：
Alignment mark and at least one pair of focusing mark, the alignment mark are centrally located at any marked to the focusing and connected On the midpoint of line, any both sides that the alignment mark is symmetrical with to the focusing mark center.
Further, the alignment mark is that cross phenotypic marker or rice font mark.
Further, the line width of the alignment mark is more than discretization granularity.
Further, the line width of the alignment mark is more than twice of PSF width.
Further, the focusing is labeled as diamond type focusing mark or grating type focusing mark.
Further, the grating type focusing is labeled as horizontal grating type focusing mark or vertical grating type focusing mark Note.
Further, the mark includes alignment mark and focusing marks, and the focusing mark includes a pair of squares Type focusing mark, a pair of horizontal grating type focusing marks and a pair of vertical grating type focusing marks.
The invention also provides a kind of alignment methods, and applied to the mark, the alignment methods comprise the following steps：
(1) to the mark with focusing and slant correction design in the preliminary alignment pieces of Barebone；
(2) with the vertical travelling workpiece platform of predetermined step pitch, it is each right to determine that method obtains according to focal plane criterion and its optimal focal plane Focus the optimal focal plane position { P markedi,Qi, i.e., the vertical optimal focal plane position of two focusing marks, wherein, PiAnd QiFor The position that i marks to focusing, wherein i >=3；
(3) according to each optimal focal plane position { P to focusing marki,QiObtain the optimal focal plane position of the alignment mark Original value MiAnd its inclined original value Ti, wherein,
(4) according to the original value M of the optimal focal plane position of the alignment markiAnd its inclined original value TiPass through average Filtering or median filter method determine the optimal focal plane position M of the workpiece (silicon chip) in visual field and its tilt T；
(5) according to the M of the optimal focal plane position of the workpiece (silicon chip) in the visual field and its inclination T catenary motion workpiece Platform with compensate needed in multiple alignment marks compensation alignment mark vertical position.
Further, the focal plane criterion includes gradient magnitude method and PSF width methods.
Further, the focusing is labeled as diamond type focusing mark or grating type focusing mark.
Further, the focal plane criterion of the grating type focusing mark is the gradient magnitude of the mark image, i.e., By image and Sobel operator convolution, and add up.
Further, the focal plane criterion of diamond type focusing mark is the PSF width of the mark, specific method It is certain row for extracting the diamond type focusing mark or a few row gray values, intensity profile, and h values in solution is obtained, according to h The size of value judges position of focal plane.
Further, it is any to the focusing mark in the alignment mark to determine that method obtains for the optimal focal plane {Pi,Qi, first method can be used, the first method includes：
(1) with predetermined step pitch Moving Workpieces platform；
(2) in each position shooting image；
(3) the focal plane criterion value is extracted from image；
(4) optimal focal plane position is asked in matched curve.
Further, it is any to the focusing mark in the alignment mark to determine that method obtains for the optimal focal plane {Pi,Qi, second method can be also used, the second method includes：
(1) the focal plane criterion value and the relation of vertical position are demarcated；
(2) in current work stage position photographs images；
(3) the focal plane criterion value is extracted from image；
(4) the distance d in current location defocus face is obtained according to nominal data；
(5) work stage is made to move d and-d respectively on the basis of current location, and shooting image is sentenced to obtain focal plane respectively According to value V1With V2；
(6) V is compared1With V2, determine position of focal plane.
Compared with prior art, the invention discloses a kind of mark with focusing and slant correction design and alignment side Method, realize the high-precision focusing and leveling of alignment mark.On the one hand so that the shadow tilted to mark is eliminated while focusing Ring, improve measurement repdocutbility；On the other hand, distortion is analyzed to measuring the Influencing Mechanism of repdocutbility, and is given accordingly pair The qualifications of quasi- mark width, it further increasing measurement repdocutbility.
Brief description of the drawings
Fig. 1 is the schematic diagram of FIA marks；
Fig. 2 is the schematic diagram of influence of the distortion to measurement repdocutbility；
Fig. 3 is the schematic diagram of defocus gap tilt effect；
Fig. 4 is the schematic diagram marked in the embodiment of the present invention one；
Fig. 5 is the schematic diagram that mark gray value is extracted in the embodiment of the present invention one；
Fig. 6 is the intensity profile schematic diagram that mark gray value is extracted in the embodiment of the present invention one；
Fig. 7 is the position relationship schematic diagram of alignment mark and focusing mark in the embodiment of the present invention one；
Fig. 8 is the vertical pose Mi that each alignment mark is calculated according to obtained vertical position Pi, Qi of each focusing mark, Ti schematic diagram；
Position X, the Y of several alignment marks according to Fig. 9, calculate the position view of workpiece (silicon chip) position.
Wherein, a:Measured object inclination angle, D：Error, 10：Diamond type focusing mark, 30：Diamond type focusing mark, 11：Water Zero diopter grid-type focusing mark, 31：Horizontal grating type focusing mark, 12：Vertical grating type focusing mark, 32：Vertical grating type is adjusted Jiao's mark, 20：Alignment mark, h：PSF width, 1：The optimal focal plane of side focusing mark, 2：The optimal focal plane of alignment mark, 3： The optimal focal plane of opposite side focusing mark.
Embodiment
The embodiment of the present invention is described in more detail below in conjunction with schematic diagram.According to description below and Claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and Using non-accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Embodiment one
As shown in figure 4, the embodiment of the present invention one provides a kind of mark with focusing and slant correction design, the mark Note includes alignment mark 20 and at least one pair of focusing mark, focuses and is marked labeled as diamond type focusing mark or grating type focusing, The grating type focusing includes labeled as horizontal grating type focusing mark or vertical grating type focusing mark, the focusing mark A pair of diamond type focusing marks, a pair of horizontal grating type focusing marks and a pair of vertical grating type focusing marks Note, the focusing mark include diamond type focusing mark 10, diamond type focusing mark 30, horizontal grating type focusing mark 11, water Zero diopter grid-type focusing mark 31, vertical grating type focusing mark 12 and vertical grating type focusing mark 32.Wherein, diamond type is focused Mark 10 and diamond type focusing mark 30 are a pair of box-shaped focusing marks, horizontal grating type focusing mark 11 and horizontal grating type Mark 31 of focusing is a pair of grating type focusing marks, and vertical grating type focusing mark 12 and vertical grating type focusing mark 32 are one Grating type is focused and marked.Alignment mark 20 is that cross phenotypic marker or rice font mark, for being aligned, in embodiment one, Alignment mark 20 is cross phenotypic marker, and the cross phenotypic marker includes ledgement and vertical moulding, ledgement and the vertical moulding phase It is mutually vertical, and alignment mark 20 is centrally located on any midpoint on the focusing mark line, it is any to the focusing Mark center is symmetrical with the both sides of the alignment mark, and alignment mark 20 and focusing mark combine for realizing alignment mark High-precision focusing and leveling.It is determined that focusing mark optimal focal plane when, it is necessary to select focal plane criterion.Common focal plane criterion has Two kinds, be gradient magnitude method and PSF (point spread function) width method respectively.
In embodiment one, the focal plane criterion of grating type focusing mark uses gradient magnitude method, i.e., calculates image and Sobel Sub- convolution, and add up.The formula of focal plane criterion is as follows：
Dx=Image*SobelX
Dy=Image*SobelY
Wherein, Image is original image, and SobelX and SobelY are respectively horizontal and vertical Sobel operators, and Dx and Dy divide Not Wei horizontal and vertical rim detection image, V is gradient approximation, namely focal plane criterion value.
In embodiment one, the focal plane criterion of diamond type focusing mark uses PSF width methods, that is, extracts square mark certain The gray value of capable or a few rows, as shown in dotted line frame in Fig. 5, intensity profile as shown in Figure 6 is obtained, the PSF solved in Fig. 6 is wide H, i.e. focal plane criterion value are spent, then judges position of focal plane further according to the size of PSF width h values.
After selected focal plane criterion, the method for determining optimal focal plane is first method or second method.
First method comprises the following steps：
(1) with predetermined step pitch Moving Workpieces platform；
(2) in each position shooting image；
(3) the focal plane criterion value is extracted from image；
(4) optimal focal plane position is asked in matched curve.
Second method comprises the following steps：
(1) the focal plane criterion value and the relation of vertical position are demarcated；
(2) in current work stage position photographs images；
(3) the focal plane criterion value is extracted from image；
(4) the distance d in current location defocus face is obtained according to nominal data；
(5) work stage is made to move d and-d respectively on the basis of current location, and shooting image is sentenced to obtain focal plane respectively According to value V1With V2；
(6) V is compared1With V2, determine position of focal plane.
As shown in fig. 7, alignment mark 20 is among a pair of focusing marks, the optimal focal plane 2 of alignment mark 20 is side The average of the optimal focal plane 1 of mark of focusing and the optimal focal plane 3 of opposite side focusing mark.In addition, focus what is marked according to side Optimal focal plane 1 and the optimal focal plane 3 of opposite side focusing mark can also obtain the inclination of alignment mark 20.
The alignment methods of the mark comprise the following steps：
(1) after workpiece is placed in work stage, first step focusing and leveling is realized by focusing and leveling system (FLS)；
(2) alignment mark 20 with focusing and slant correction design is brought into and Barebone is regarded by travelling workpiece platform , preliminary surveying is completed in alignment, so that it is determined that the horizontal level parameter of focusing mark；
(3) with the vertical travelling workpiece platform of predetermined step pitch, it is each right to determine that method obtains according to focal plane criterion and its optimal focal plane Focus the optimal focal plane position { P markedi,Qi, wherein,
PiAnd QiFor the position of i-th pair focusing mark, wherein i >=3；
(4) according to each optimal focal plane position { P to focusing marki,Qi, i.e., the vertical optimal focal plane of two focusing marks Position, so as to obtain the original value M of the optimal focal plane position of the alignment mark 20iAnd its inclined original value Ti, wherein,
This step refers to Fig. 8；
(5) according to the original value M of the optimal focal plane position of the alignment mark 20iAnd its inclined original value TiBy equal Value filtering or median filter method determine that multiple alignment marks 20 enclose the optimal focal plane position M of the workpiece (silicon chip) in visual field And its tilt T；
(6) according to the M of the optimal focal plane position of the workpiece (silicon chip) in the visual field and its inclination T catenary motion work stages To compensate the vertical position for the alignment mark that compensation is needed in multiple alignment marks；
(7) horizontal level of alignment mark 20 is recalculated, its horizontal level is xWZCS,yWZCS, while when recording measurement Work stage position；This step refers to Fig. 9
(8) position of the workpiece (silicon chip) in work stage is obtained.
Wherein, step (1) is first step focusing and leveling, and for first successive step, step (3)-(8) are that second step focusing is adjusted It is flat, for realizing the high-precision focusing and leveling of alignment mark.
The above completes the design of the mark of slant correction, and gives the alignment methods of the mark, but not Consider influence of the distortion to the alignment precision of alignment mark.
As shown in Fig. 2 alignment mark has certain line width, a width of LR line segment lengths of Fig. 2 center lines.The side position of alignment mark two For L and R, center C, the actual imaging position of alignment mark is L ' and R ', and corresponding center is CC.Calibration algorithm Ideal image point and actual imaging point position relationship can be set up, as shown by the arrows in Figure 2.Due to non-linear, the CC points of distortion Imaging point C ' corresponding to C points is deviate from, therefore, real marking test position CC deviate from mark physical location, if nevertheless, Bias keeps fixed then repdocutbility still to ensure.But in fact, with the difference of field positions, bias will also change, from And influence measurement repdocutbility.
The computational methods that distort influences on alignment precision comprise the following steps：
(1) obtained by optical softwares such as Zemax and CODE V in visual field each position camera lens relative to ideal image position Offset curve O (t)；
(2) window function, width T are generated according to the line width of mark；
(3) by window from centre slit, be divided into two close to subwindow, respectively W (t) and W (t-T/2), width is equal For T/2；
(4) subwindow W (t) and W (t-T/2) are subjected to convolution with O (t) respectively, obtain C (t) and D (t)；
(5) E (t)=C (t)-D (t) is taken；
(6) maximum Max and minimum M in E (t) is sought.
In image space, the influence to precision that distorts can be calculated as Err=Max-Min, and corresponding object space value is Err/ multiplying powers.
As the above analysis, the line width of alignment mark 20 is smaller, and the influence to distort to precision is smaller.But alignment mark 20 cannot be infinitely small, because rear end carries out discretization to image by CCD (charge coupled cell), the line width of alignment mark 20 needs big In the discretization granularity (size of particle) of image.
Further, since the internal brightness value of alignment mark 20 keeps constant, the information without the position of alignment mark 20.Only right Fiducial mark remembers 20 edges, the feature for indicating the position of alignment mark 20 just be present.In order to be accurately positioned the edge of alignment mark 20, (i.e. PSF width) is, it is necessary to 4 sampled points in the range of edges cover, therefore need to be more than 2 times of PSF wide for the line width of alignment mark 20 Degree, so that it is determined that the line width of alignment mark 20.
Embodiment two
Different from embodiment one, in embodiment two, alignment mark center is not necessarily located in described any to focusing mark On the midpoint of line, and it need to only be marked to the distance of two focusing marks, it is known that being focused according to known alignment mark to two Distance obtain alignment mark optimal focal plane position.Compared with embodiment one, embodiment two provide a kind of qualifications compared with Few mark, meet the diversified demand of user.
In embodiment two, except the above, mark and alignment methods are consistent with embodiment one, therefore no longer superfluous herein State.
Embodiment three
Different from embodiment one, in embodiment three, alignment mark is horizontal line bar type indicia or vertical line bar type indicia, is used for Measure one direction position.Compared with embodiment one, embodiment three provides a kind of mark for being used to measure one direction position, meets The diversified demand of user.
In embodiment three, except the above, mark and alignment methods are consistent with embodiment one, therefore no longer superfluous herein State.
Example IV
Different from embodiment one, in example IV, alignment mark marks for rice font.Compared with embodiment one, implement Example four provides a kind of rice font alignment mark, meets the diversified demand of user.
In example IV, except the above, mark and alignment methods are consistent with embodiment one, therefore no longer superfluous herein State.
To sum up, the invention discloses a kind of mark and alignment methods with focusing and slant correction design, realize pair The high-precision focusing and leveling of fiducial mark note.On the one hand so that inclination is eliminated while focusing, improves measurement repdocutbility；It is another Aspect, distortion is analyzed to measuring the Influencing Mechanism of repdocutbility, and give the qualifications to mark width accordingly, further Ground improves measurement repdocutbility.
The preferred embodiments of the present invention are above are only, any restrictions effect is not played to the present invention.Belonging to any Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still Belong within protection scope of the present invention.

Claims (7)

1. a kind of alignment methods, it is characterised in that the alignment methods comprise the following steps：
(1) a kind of mark with focusing and slant correction design is set on workpiece, it is described that there is focusing and slant correction to set The mark of meter includes alignment mark and at least one pair of focusing mark, and the alignment mark is centrally located at any to the focusing mark On the midpoint for remembering line, to the mark with focusing and slant correction design in the preliminary alignment pieces of Barebone；
(2) with the vertical travelling workpiece platform of predetermined step pitch, it is each to focusing to determine that method obtains according to focal plane criterion and its optimal focal plane Optimal focal plane position { the P of marki,Qi, wherein,
PiAnd QiFor the position of i-th pair focusing mark, wherein i >=3；
(3) according to each optimal focal plane position { P to focusing marki,QiObtain the alignment mark optimal focal plane position original Initial value MiAnd its inclined original value Ti, wherein,
<mrow> <msub> <mi>M</mi> <mi>i</mi> </msub> <mo>=</mo> <mfrac> <mrow> <msub> <mi>P</mi> <mi>i</mi> </msub> <mo>+</mo> <msub> <mi>Q</mi> <mi>i</mi> </msub> </mrow> <mn>2</mn> </mfrac> <mo>,</mo> <msub> <mi>T</mi> <mi>i</mi> </msub> <mo>=</mo> <mi>arctan</mi> <mrow> <mo>(</mo> <mfrac> <mrow> <msub> <mi>P</mi> <mi>i</mi> </msub> <mo>-</mo> <msub> <mi>Q</mi> <mi>i</mi> </msub> </mrow> <mrow> <mi>D</mi> <mi>i</mi> <mi>s</mi> <mrow> <mo>(</mo> <msub> <mi>P</mi> <mi>i</mi> </msub> <mo>,</mo> <msub> <mi>Q</mi> <mi>i</mi> </msub> <mo>)</mo> </mrow> </mrow> </mfrac> <mo>)</mo> </mrow> <mo>;</mo> </mrow>
(4) according to the original value M of the optimal focal plane position of the alignment markiAnd its inclined original value TiPass through mean filter Or median filter method determines the optimal focal plane position M of the workpiece in visual field and its tilts T；
(5) according to the M of the optimal focal plane position of the workpiece and its T catenary motions work stage is tilted to compensate multiple alignments The vertical position of the alignment mark of compensation is needed in mark.
2. alignment methods as claimed in claim 1, it is characterised in that the focal plane criterion includes gradient magnitude method and PSF is wide Degree method.
3. alignment methods as claimed in claim 2, it is characterised in that the focusing is labeled as diamond type focusing mark or grating Type focusing mark.
4. alignment methods as claimed in claim 3, it is characterised in that the focal plane criterion of grating type focusing mark is The gradient magnitude of the mark image.
5. alignment methods as claimed in claim 3, it is characterised in that the focal plane criterion of diamond type focusing mark is The PSF width of the mark.
6. alignment methods as claimed in claim 1, it is characterised in that it is described to fiducial mark that the optimal focal plane determines that method obtains Any { P to the focusing mark in notei,Qi, first method can be used, the first method includes：
(1) with predetermined step pitch Moving Workpieces platform；
(2) in each position shooting image；
(3) focal plane criterion value is extracted from image；
(4) optimal focal plane position is asked in matched curve.
7. alignment methods as claimed in claim 1, it is characterised in that it is described to fiducial mark that the optimal focal plane determines that method obtains Any { P to the focusing mark in notei,Qi, second method can be used, the second method includes：
(1) focal plane criterion value and the relation of vertical position are demarcated；
(2) in current work stage position photographs images；
(3) the focal plane criterion value is extracted from image；
(4) the distance d in current location defocus face is obtained according to nominal data；
(5) work stage is moved d and-d respectively on the basis of current location, and respectively shooting image to obtain focal plane criterion value V1With V2；
(6) V is compared1With V2, determine position of focal plane.
CN201410456314.2A 2014-09-09 2014-09-09 A kind of mark and alignment methods with focusing and slant correction design Active CN105467781B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201410456314.2A CN105467781B (en) 2014-09-09 2014-09-09 A kind of mark and alignment methods with focusing and slant correction design
JP2017513477A JP6309694B2 (en) 2014-09-09 2015-09-08 Mark having design of focus and tilt correction and alignment method thereof
SG11201701903QA SG11201701903QA (en) 2014-09-09 2015-09-08 Marker having focusing and tilt correction design and alignment method
PCT/CN2015/089167 WO2016037562A1 (en) 2014-09-09 2015-09-08 Marker having focusing and tilt correction design and alignment method
KR1020177008904A KR101948906B1 (en) 2014-09-09 2015-09-08 Marker having focusing and tilt correction design and alignment method
TW104129780A TWI585513B (en) 2014-09-09 2015-09-09 A mark and alignment method with focus and tilt correction design

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Application Number Priority Date Filing Date Title
CN201410456314.2A CN105467781B (en) 2014-09-09 2014-09-09 A kind of mark and alignment methods with focusing and slant correction design

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CN105467781A CN105467781A (en) 2016-04-06
CN105467781B true CN105467781B (en) 2017-12-29

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KR (1) KR101948906B1 (en)
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107450287B (en) 2016-05-31 2019-10-25 上海微电子装备（集团）股份有限公司 Focusing and leveling measurement apparatus and method
CN108333880B (en) * 2017-01-19 2020-08-04 上海微电子装备（集团）股份有限公司 Photoetching exposure device and focal plane measuring device and method thereof
JP7186531B2 (en) * 2018-07-13 2022-12-09 キヤノン株式会社 Exposure apparatus and article manufacturing method
CN111624856B (en) * 2019-02-28 2021-10-15 上海微电子装备（集团）股份有限公司 Mask plate, motion table positioning error compensation device and compensation method
CN110849266B (en) * 2019-11-28 2021-05-25 江西瑞普德测量设备有限公司 Telecentric lens telecentricity debugging method of image measuring instrument
CN111383537A (en) * 2020-04-02 2020-07-07 上海天马有机发光显示技术有限公司 Display panel and display device
CN117492336B (en) * 2024-01-02 2024-04-09 天府兴隆湖实验室 Alignment mark and pattern alignment method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000503A (en) * 1990-03-05 1991-10-01 Asm Lithography Bv APPARATUS AND METHOD FOR IMAGING A MASK PATTERN ON A SUBSTRATE.
JPH06196387A (en) * 1992-12-22 1994-07-15 Canon Inc Focusing method of substrate and projection exposure method
US6136662A (en) * 1999-05-13 2000-10-24 Lsi Logic Corporation Semiconductor wafer having a layer-to-layer alignment mark and method for fabricating the same
JP2004279166A (en) * 2003-03-14 2004-10-07 Canon Inc Position detector
JP4516826B2 (en) * 2004-11-15 2010-08-04 Ｏｋｉセミコンダクタ株式会社 Focus monitoring method
JP2006261644A (en) 2005-02-16 2006-09-28 Nikon Corp Exposure apparatus and method of aligning reticle with sensitive substrate stage
JP2006332480A (en) 2005-05-30 2006-12-07 Nikon Corp Position measurement method, exposure method, device-manufacturing method, position-measurement apparatus, and exposure apparatus
US20080165632A1 (en) * 2005-07-04 2008-07-10 Koninklijke Philips Electronics, N.V. Optical Pick-Up and/or Recording Device
JP2007305696A (en) * 2006-05-09 2007-11-22 Nsk Ltd Accuracy measuring method of positioning apparatus
CN100526994C (en) * 2007-08-20 2009-08-12 上海微电子装备有限公司 Transmission aligning mark combination and alignment method of light scribing device
JP2010098143A (en) * 2008-10-16 2010-04-30 Canon Inc Exposure apparatus and method of manufacturing device
CN101943865B (en) * 2009-07-09 2012-10-03 上海微电子装备有限公司 Alignment marks for photoetching equipment and alignment method
CN102566338B (en) 2010-12-28 2013-11-13 上海微电子装备有限公司 Method for correcting alignment positions in photoetching alignment system
CN103163747B (en) * 2011-12-14 2015-03-25 上海微电子装备有限公司 Small spot off-axis alignment system based on area lighting
CN203553154U (en) * 2013-11-14 2014-04-16 中芯国际集成电路制造(北京)有限公司 Measurement mark

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