CN105467289B - In-situ temperature detection device, chip and the abatement detecting method of high resistance structure - Google Patents
In-situ temperature detection device, chip and the abatement detecting method of high resistance structure Download PDFInfo
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- CN105467289B CN105467289B CN201410487446.1A CN201410487446A CN105467289B CN 105467289 B CN105467289 B CN 105467289B CN 201410487446 A CN201410487446 A CN 201410487446A CN 105467289 B CN105467289 B CN 105467289B
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Abstract
This application provides in-situ temperature detection device, chip and the abatement detecting methods of a kind of high resistance structure.The in-situ temperature detection device of the high resistance structure includes：First diode, including the first positive terminal and the first negative terminal；Second diode, including the second positive terminal and the second negative terminal；One or more diode groups, including one or more diodes, the diode group are oppositely arranged between the first negative terminal and the second positive terminal.Diode group is used for incuding the heat that high resistance structure in interconnection architecture gives off, due to having certain relationship between the leakage current and temperature of diode, therefore by detect at different temperatures, pass through the size of current of diode group under identical voltage, the temperature of high resistance structure is obtained further according to the relationship between electric current and temperature, solves the problems, such as to be difficult to Accurate Determining high resistance structure temperature in the prior art.
Description
Technical field
This application involves semiconductor applications, in particular to a kind of in-situ temperature detection device of high resistance structure, core
Piece and abatement detecting method.
Background technology
With the continuous development of sub-micro CMOS technology technology, various failure mechanisms start to display, hot current-carrying
Sub- injection effect (HCI, Hot Carrier Injection), gate dielectric breakdown (TDDB, Time related to time
Dependent Dielectric Breakdown) effect, metallization electromigration (EM, Electro migration) effect, Europe
300 chain of nurse contact hole is degenerated and PMOSFET negative bias thermal instabilities (NBTI, Negative Bias Temperature
Instability) it is the main failure mechanism occurred in super large-scale integration, these failure mechanisms are related with temperature,
Especially electromigration effect.Therefore in electromigration reliability measurement, the actual temperature for accurately knowing measurement device is needed, is made
Reliable life is accurately calculated.
At present measured to the electromigration reliability of IC devices using measurement structure as shown in Figure 1, the measurement
Structure is typical four-end method (kelvin) measurement structure, and wherein node F1 is the first current terminal (galvanization), and node F2 is the
Two current terminals (galvanization)；Node S1 is the first measurement end (voltage measurement), and node S2 is the second measurement end (voltage measurement).
When measurement, IC devices to be measured are heated using heating device, when being heated to predetermined temperature, electric current are made to pass through the first electric current
End, the circuit of IC devices and the second current terminal, while the voltage drop between the first measurement end and the second measurement end is measured, to profit
The resistance of the IC devices under a certain environment temperature is calculated with voltammetry, according to the resistance of measurement come detect device whether because
Electromigration effect and make resistance become larger and fail.In calculating mean time to failure, MTTF, the temperature of device under test is all directly to use
Environment temperature (i.e. the temperature of heating device) substitutes.
But high resistance structure (High resistance device, High-R) is in IC devices in the prior art
Using more and more extensive, therefore the reliability of high resistance structure has increasing need for paying attention to, especially the reliability of electromigration effect
Problem.The electro-migration testing of high resistance structure still uses four-end method (kelvin) as shown in Figure 1, service life straight when calculating at present
It connects and replaces the temperature of tested high resistance structure with environment temperature (i.e. the temperature of heating device).But due to high resistance structure
Joule heat effect to be far longer than traditional metal device, therefore the heating effect of high resistance structure itself cannot in testing
Simply ignore again, according to Black electromigration equations：
t50For mean time to failure, MTTF, A is constant, and j is current density, and n is the Activation Energy, and Ea activates for atomic migration
Can, k is Boltzmann constant, and T is the temperature of high resistance structure, and wherein T is the key factor for influencing mean time to failure, MTTF.In profit
When with above-mentioned Black electromigration equation calculation mean time to failure, MTTF, if directly using environment temperature (i.e. the temperature of heating device)
It calculates, the actual temperature due to the temperature well below high resistance structure in testing, this can lead to the longevity of Calculation of Reliability
Life is significantly larger than actual life.Therefore a kind of installation method is needed, it is reliable in electromigration can accurately measures high resistance structure
Property test in actual temperature.
Invention content
The application is intended to provide a kind of in-situ temperature detection device, chip and the abatement detecting method of high resistance structure, with
It solves the problems, such as accurately measure high resistance structure temperature in the prior art.
To solve the above-mentioned problems, according to the one side of the application, a kind of in-situ temperature of high resistance structure is provided
Detection device, the device include：First diode, including the first positive terminal and the first negative terminal；Second diode, including
Second positive terminal and the second negative terminal；One or more diode groups, each above-mentioned diode group respectively include one or more
A diode, diode group are oppositely arranged between the first negative terminal and the second positive terminal.
Further, above-mentioned each diode group includes the diode of multiple parallel connections.
Further, above-mentioned each diode group includes 100~10000 diodes.
Further, above-mentioned diode is Schottky diode.
Further, multiple above-mentioned diode groups are arranged in parallel between the first negative terminal and the second positive terminal.
Further, above-mentioned diode group is two, and is symmetrically disposed at the both sides of above-mentioned high resistance structure.
According to another aspect of the present invention, a kind of chip is provided, which includes：High resistance structure；And it is above-mentioned
In-situ temperature detection device, which is disposed adjacent with high resistance structure, for detecting high resistance structure
Operating temperature.
Further, the first positive terminal and the second negative terminal of above-mentioned in-situ temperature detection device with high resistance knot
One end of structure is electrically connected.
According to another aspect of the present invention, a kind of abatement detecting method of high resistance structure, the failure detection are provided
Method is implemented using above-mentioned in-situ temperature detection device, and the method comprising the steps of：S1 utilizes above-mentioned original under predetermined voltage
Position temperature-detecting device obtains the relation curve of the leakage current and temperature of diode group, and predetermined voltage is less than above-mentioned diode group
Breakdown voltage；S2 incudes the heat that above-mentioned high resistance structure is radiated with above-mentioned diode；S3, in above-mentioned high resistance structure
Both ends apply voltage, the electric current that detection passes through above-mentioned high resistance structure；S4 makes the second negative terminal be grounded, in the first negative pole end
Apply predetermined voltage identical with step S1 between son and the second negative terminal, the leakage current of diode group is detected, by leakage current
The temperature of above-mentioned high resistance structure is obtained with the relation curve of temperature；And S5, utilize electric current, temperature value and Black electromigration
The mean time to failure, MTTF of the above-mentioned high resistance structure of equation calculation.
Further, above-mentioned steps S1 includes：High resistance structure is heated to predetermined temperature by step S11；Step S12,
Under predetermined temperature, the second negative terminal is set to be grounded, in situ the first negative terminal and the second negative terminal of temperature-detecting device
Between apply predetermined voltage, the electric current of diode group is flowed through in detection, obtains the pass corresponding with temperature of leakage current at a predetermined temperature
System；And step S13, repeat step S11 and step S12, wherein the predetermined temperature in each step S11 is different, obtains leakage current
With the relation curve of temperature.
Further, the first positive terminal of above-mentioned in situ detection device and the second negative terminal with above-mentioned high resistance knot
One end of structure 100 is electrically connected.
Further, in above-mentioned steps S3 in the voltage of high resistant electricity structure both ends application, above-mentioned first negative terminal connects
Ground.
Using the technical solution of the application, the trend of electric current, two poles during the first diode and the second diode detection
Pipe group is used for incuding the heat that high resistance structure in interconnection architecture gives off；Due to having between the leakage current and temperature of diode
Certain relationship, thus by detect at different temperatures, under identical voltage by the size of current of diode group, further according to electricity
Relationship between stream and temperature obtains the temperature of high resistance structure, and then solves and be difficult to Accurate Determining high resistance in the prior art
The problem of structure temperature.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 shows the structural schematic diagram of four-wire method measurement structure in the prior art；
Fig. 2 shows the temperature in situ of high resistance structure in a kind of semiconductor devices that preferred embodiment is provided of the application
Spend the structural schematic diagram of detection device；
Fig. 3 shows the application using Schottky diode as the pass between the temperature and leakage current obtained when diode
System's figure；
Fig. 4 shows that a kind of utilization of preferred embodiment of the application in-situ temperature detection device shown in Fig. 2 implements step
Current direction schematic diagram when rapid S1 and step S4；And
Fig. 5 shows a kind of electricity when applying voltage to high resistance structure shown in Fig. 2 of preferred embodiment of the application
Stream flows to schematic diagram.
Specific implementation mode
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific implementation mode, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
It should be noted that term " first " in the description and claims of this application and above-mentioned attached drawing, "
Two " etc. be for distinguishing similar object, without being used to describe specific sequence or precedence.It should be appreciated that using in this way
Data can be interchanged in the appropriate case, so that presently filed embodiment described herein for example can be in addition to herein
Sequence other than those of diagram or description is implemented.In addition, term " comprising " and " having " and their any deformation, it is intended that
Be to cover it is non-exclusive include, for example, containing the process of series of steps or unit, method, system, product or equipment not
Those of be necessarily limited to clearly to list step or unit, but may include not listing clearly or for these processes, side
The intrinsic other steps of method, product or equipment or unit.
For ease of description, herein can with use space relative terms, as " ... on ", " in ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, if the device in attached drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (be rotated by 90 ° or be in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As background technology is introduced, the prior art carries out failure analysis in detection IC devices and its high resistance structure
When, the foundation generally judged using the environment temperature residing for it as its failure, but high resistance structure generates in detection process
A large amount of Joule heat so that the therefore temperature of high resistance structure is made with environment temperature to high resistance knot far above environment temperature
The error that the failure of structure judges is larger, and as above in order to solve the problems, such as, present applicant proposes a kind of in-situ temperatures of high resistance structure
Detection device.
Now, the illustrative embodiments according to the application are more fully described with reference to the accompanying drawings.However, these are exemplary
Embodiment can be implemented by many different forms, and should not be construed to be limited solely to embodiment party set forth herein
Formula.It should be understood that thesing embodiments are provided so that disclosure herein is thoroughly and complete, and these are shown
The design of example property embodiment is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer
With the thickness in region, and make that identical device is presented with like reference characters, thus description of them will be omitted.
In a kind of preferred embodiment of the application, a kind of in-situ temperature detection dress of high resistance structure 100 is provided
It sets, as shown in Fig. 2, the in-situ temperature detection device includes the first diode 1, the second diode 2 and one or more diodes
Group 3, the first diode 1 include the first positive terminal 11 and the first negative terminal 12；Second diode 2 includes the second positive terminal
21 and second negative terminal 22；Each diode group 3 includes one or more diodes 31, and each diode group 3 is oppositely arranged the
Between one negative terminal 12 and the second positive terminal 21.
In-situ temperature detection device with above structure, electric current in 2 detection process of the first diode 1 and the second diode
Trend, diode group 3 be used for incude the heat that interconnection architecture high resistance structure 100 gives off；Due to the leakage current of diode
Having between temperature has linear relationship between specific relationship, such as the leakage current and temperature of Schottky diode, therefore
By detecting under identical voltage through the size of current of diode group 3, obtained further according to the relationship between leakage current and temperature
The temperature of high resistance structure 100, and then solve and be difficult to 100 temperature of Accurate Determining high resistance structure in the prior art electricity is caused to move
It moves mean time to failure, MTTF in effect and calculates inaccurate problem.
When carrying out failure detection using above-mentioned in-situ temperature detection device, since the leakage current of diode is smaller,
The variation of single diode leakage current is not it is obvious that in order to more delicately measure high resistance structure as caused by temperature change
100 temperature, preferably each diode group 3 of the application include the diode 31 of multiple parallel connections.The leakage current of diode 31 in parallel
Summation varies with temperature and significant change occurs, therefore can accurately measure the temperature of high resistance structure 100, and then can profit
The out-of-service time of high resistance structure 100 is accurately calculated with it.
According to the technological design of various IC devices in the prior art, preferably each diode group 3 of the application include 100~
10000 diodes 31.
The application is in order to more accurately measure the temperature of high resistance structure 100, to the temperature of various diodes in the prior art
Relationship between degree and leakage current is studied, it is found that the breakdown voltage of Schottky diode is higher, using it as the application
Diode 31 when being detected reliability it is higher, therefore preferably above-mentioned diode 31 is Schottky diode.As shown in figure 3,
There is stringent exponential relationship, therefore its result measured is more accurate between the temperature and leakage current of Schottky diode；And
And Schottky diode has higher breakdown voltage and preferable leakage current characteristic so that with its in-situ temperature detection dress
It is sensitiveer, accurate to set, and then can more accurately calculate the out-of-service time in electromigration effect.
In the application another preferred embodiment, above-mentioned multiple diode groups 3 are arranged in parallel in the first negative pole end
Between son 12 and the second positive terminal 21, the sensitivity of in-situ temperature detection device can be reinforced in this way.The application another
In embodiment, above-mentioned diode group 3 is two.Two diode groups 3 are placed on the both sides of high resistance structure 100 when measuring,
Therefore the heat that high resistance structure 100 is radiated can be incuded comprehensively, and then accurately can delicately obtain high resistance structure 100
Temperature.
In the application another preferred embodiment, a kind of chip is provided, which includes high resistance structure 100
With above-mentioned in-situ temperature detection device, which is disposed adjacent with high resistance structure 100, for detecting high electricity
Hinder the operating temperature of structure 100.
Chip with above structure includes the in-situ temperature detection device of high resistance structure 100, can be to chip structure
In the temperature of high resistance structure 100 accurately detected, and then solve the high resistance structure for being difficult to detect in existing chip
The problem of 100 temperature, may further accurately calculate in electromigration effect according to the temperature of high resistance resistance structure and averagely fail
Time.
When by the setting of in-situ temperature detection device in the chips, in order to more easily carry out high resistance structure 100
Temperature detection, the first positive terminal 11 and the second negative terminal 22 of above-mentioned in-situ temperature detection device with above-mentioned high electric resistance
The first end of structure 100 is electrically connected.The degree of integration of chip, and the first diode 1 and can be improved after electric connection
Two diodes 2 can sense of current, therefore avoid impacting the existing performance of other side, this how to avoid the influence with
Lower content illustrates.
In the application another preferred embodiment, a kind of abatement detecting method of high resistance structure 100 is provided,
The method is implemented using above-mentioned in-situ temperature detection device, and includes the following steps：S1 is obtained above-mentioned under predetermined voltage
The relation curve of the leakage current and temperature of the diode group 3 of in-situ temperature detection device, predetermined voltage are less than hitting for diode group 3
Wear voltage；S2 places diode group 3 close to high resistance structure 100, incudes 100 spokes of high resistance structure using diode group 3
The heat penetrated；S3 applies voltage at the both ends of high resistance structure 100, detects the electric current of the high resistance structure 100 passed through；S4 makes
Second negative terminal 22 is grounded, and is applied between the first negative terminal 12 and the second negative terminal 22 of temperature-detecting device in situ
Predetermined voltage identical with S1, the leakage current of detection diode group 3 obtain high electricity by the relation curve of leakage current and temperature
Hinder the temperature of structure 100；S5 utilizes high resistant electric current, the temperature value obtained and Black electromigration equation calculation high resistance structures
100 mean time to failure, MTTF.
Above-mentioned in-situ temperature detection method incudes high electricity using the diode group 3 of the in-situ temperature detection device of the application
The heat that resistance structure 100 gives off；Relationship between leakage current and temperature due to having obtained diode group 3 in advance is bent
Line, therefore 3 leakage current of diode group is flowed through under predetermined voltage by detection, further according to the pass between leakage current and temperature
System obtains the temperature of high resistance structure 100, and then solves and be difficult to 100 temperature of Accurate Determining high resistance structure in the prior art
Problem, by temperature that above-mentioned detection obtains, electric current substitutes into Black electromigration equation can obtain accurate mean time to failure, MTTF.
In order to make those skilled in the art more fully understand above-mentioned abatement detecting method, below with reference to attached drawing to above-mentioned mistake
Effect detection method illustrates.
First, step S1 is executed, using structure shown in Fig. 4, wherein arrow direction is current direction, obtains temperature in situ
Spend the relationship of the leakage current and temperature of the diode group 3 of detection device.The in-situ temperature detection device of the application can be with this Shen
The connection setting of high resistance structure 100 please can also be separately provided, when being separately provided, the detection of leakage current, the induction to temperature
It is and mutually unaffected by the current detecting of high resistance structure 100 so that above-mentioned in-situ temperature detection device can be flexible
Using；When the two, which connects, to be arranged, former chip is with regard to becoming a core that can be accurately detected to the temperature of high resistance structure 100
Piece, can refer to Fig. 4,11 and second negative terminal 22 of the first positive terminal therein with the first end phase of high resistance structure 100
It is even that the first positive terminal 11 and the second negative terminal 22 are electrically connected with one end of high resistance structure 100, it is possible thereby to will
In-situ temperature detection device and high resistance structure 100 are produced on jointly in IC process devices, and due to the first diode 1 and the
Two diodes 2 have unilateral conduction, therefore when node F1 applies voltage, and node S1 is grounded, electric current is along the first negative terminal
12 flow to the second negative terminal 22 through diode group 3, ensure that detected electric current is the leakage current of diode group 3.
The relationship of more accurate leakage current and temperature, preferably above-mentioned steps S1 include in order to obtain：Step S11 will be waited for
It surveys high resistance structure 100 and is heated to predetermined temperature；Step S12 applies positive electricity under above-mentioned predetermined temperature in node F1 points
Pressure, makes the second negative terminal 22 be grounded by node S1, i.e. the first negative terminal 12 of in-situ temperature detection device and second negative
Apply voltage between extreme son 22, detection flows through the electric current of diode group 3, obtains the relationship of leakage current and temperature；Step S13,
Repeat step S11 and step S12, wherein the predetermined temperature in each step S11 is different, to utilize obtained a series of leakage
Electric current and temperature are established using leakage current as ordinate, and temperature is the curve of abscissa.
In order to which those skilled in the art more fully understand the relationship of above-mentioned leakage current and temperature, below with Schottky diode
Process is established as illustrate the curve for diode：
The in-situ temperature detection device of the application is placed in the environment of known temperature, the second negative terminal 22 is made to connect
Ground applies the electricity of the breakdown voltage less than the Schottky diode between the first negative terminal 12 and the second negative terminal 22
Pressure, the leakage current that detection passes through diode group 3；Change environment temperature, detects the leakage current under above-mentioned voltage again；In repetition
It states process at least once, obtains the numerical value of at least three groups temperature and leakage current, to intending for obtained temperature and leakage current
Close, obtain similar temperature as shown in Figure 3 and leakage current relation curve, the curve with three Schottky diodes in parallel-
Obtained from leakage current at 40 DEG C, the leakage current at 25 DEG C and the leakage current at 125 DEG C are fitted with corresponding temperature,
Functional relation between the leakage current being wherein fitted and temperature is y=6E-10e0.0717x, the determination coefficient of electric current and temperature is
0.9923。
Then, step S2 is executed, the diode group 3 of above-mentioned in-situ temperature detection device is put close to high resistance structure 100
It sets, as shown in Fig. 2, incuding the heat that high resistance structure 100 is radiated using diode group 3, diode group 3 is sensing high electricity
Temperature can change after the heat that resistance structure 100 is radiated, and the temperature which can directly react high resistance structure 100 becomes
Change.
Step S3 is executed, using structure shown in Fig. 5, applies voltage at the both ends of high resistance structure 100, makes high resistance structure
100 one end connects positive pole, other end ground connection, when the first positive terminal 11 and the second negative terminal 22 with high resistance knot
When one end of structure 100 is electrically connected, it is grounded by the one end ground connection of high resistance structure 100 or by the first positive terminal 11, i.e.,
Node F2 shown in Fig. 5 applies forward voltage, and node F1 is made to be grounded, detect the electric current of the high resistance structure 100 passed through.Together
Second diode 2 of sample, the application has unilateral conduction, therefore electric current can only be by high resistance structure 100, without flowing to
Diode group 3, and then be easier to detect the electric current by high resistance structure 100.
Step S4 is executed, also with structure shown in Fig. 4, applies forward voltage in node F1, makes the second negative terminal
22 are grounded by node S1, apply predetermined electricity identical with step S1 between the first negative terminal 12 and the second negative terminal 22
Pressure, the leakage current of detection diode group 3, the temperature of high resistance structure 100 is obtained by the relationship of leakage current and temperature.Above-mentioned detection
The process of the leakage current of diode group 3 can refer to the detection process in step S1 to leakage current.
After the detection for completing above steps, above-mentioned high resistant electric current, temperature value and Black electromigration equation calculations are utilized
The mean time to failure, MTTF of high resistance structure 100.Black electromigration equation therein is the equation mentioned by background technology：
It is well known by those skilled in the art that the electric current divided by height electricity by high resistance structure 100 that the application detects
The sectional area of resistance structure 100 can be obtained the current density in above-mentioned equation；After the material of high resistance structure 100 determines, electricity
Current density index and atomic migration activation energy are constant, and those skilled in the art are detected by conventionally known method,
This is repeated no more；Therefore, the electric current (or current density) that the application is detected, the Activation Energy, atomic migration activation energy,
The temperature of high resistance structure 100, which substitutes into above-mentioned equation, can be calculated mean time to failure, MTTF.
When carrying out failure detection using above-mentioned in-situ temperature detection device, since the leakage current of diode is smaller,
The variation of single diode leakage current is not it is obvious that in order to more delicately measure high resistance structure as caused by temperature change
100 temperature, preferably each diode group 3 of the application include the diode 31 of multiple parallel connections.The leakage current of diode 31 in parallel
Summation varies with temperature and significant change occurs, therefore can accurately measure the temperature of high resistance structure 100, and then can profit
The out-of-service time of high resistance structure 100 is accurately calculated with it.
According to the technological design of various IC devices in the prior art, preferably each diode group 3 of the application include 100~
10000 diodes 31.
The application is in order to more accurately measure the temperature of high resistance structure 100, to the temperature of various diodes in the prior art
Relationship between degree and leakage current is studied, it is found that the breakdown voltage of Schottky diode is higher, using it as the application
Diode 31 when being detected reliability it is higher, therefore preferably above-mentioned diode 31 is Schottky diode.As shown in figure 3,
There is stringent exponential relationship, therefore its result measured is more accurate between the temperature and leakage current of Schottky diode；And
And Schottky diode has higher breakdown voltage and preferable leakage current characteristic so that with its in-situ temperature detection dress
It is sensitiveer, accurate to set, and then can more accurately calculate the out-of-service time in electromigration effect.
It can be seen from the above description that the application the above embodiments realize following technique effect：
1), during the first diode of the application in-situ temperature detection structure and the second diode detection electric current trend,
Diode group is used for incuding the heat that high resistance structure in interconnection architecture gives off；Due between the leakage current and temperature of diode
With linear relationship, therefore by detecting by the size of current of diode group under a certain voltage, further according to leakage current and temperature
Relationship between degree obtains the temperature of high resistance structure, and then solves and be difficult to Accurate Determining high resistance structure temperature in the prior art
The problem of spending；
2), the application in-situ temperature detection structure and in-situ temperature detection method are all relatively simple, are conducive to promote and apply.
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, for the skill of this field
For art personnel, the application can have various modifications and variations.Within the spirit and principles of this application, any made by repair
Change, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (12)
1. a kind of in-situ temperature detection device of high resistance structure, which is characterized in that including：
First diode, including the first positive terminal and the first negative terminal；
Second diode, including the second positive terminal and the second negative terminal；
One or more diode groups, each diode group respectively include one or more diodes, each diode group
It is oppositely arranged between first negative terminal and the second positive terminal.
2. in-situ temperature detection device according to claim 1, which is characterized in that each diode group respectively includes more
The diode of a parallel connection.
3. in-situ temperature detection device according to claim 2, which is characterized in that each diode group respectively includes
100~10000 diodes.
4. in-situ temperature detection device according to claim 1, which is characterized in that the diode is two pole of Schottky
Pipe.
5. in-situ temperature detection device according to any one of claim 1 to 4, which is characterized in that multiple two poles
Pipe group is arranged in parallel between first negative terminal and the second positive terminal.
6. in-situ temperature detection device according to claim 5, which is characterized in that the diode group is two, described
Two diode groups are symmetricly set on the both sides of the high resistance structure.
7. a kind of chip, which is characterized in that including：
High resistance structure；And
In-situ temperature detection device according to any one of claims 1 to 6, is disposed adjacent with the high resistance structure, is used for
Detect the operating temperature of the high resistance structure.
8. chip according to claim 7, which is characterized in that the first positive terminal of the in-situ temperature detection device and
Second negative terminal is electrically connected with one end of the high resistance structure.
9. a kind of abatement detecting method of high resistance structure, which is characterized in that the abatement detecting method using claim 1 to
In-situ temperature detection device described in any one of 6 is implemented, and includes the following steps：
S1 obtains the leakage current and temperature of the diode group using the in-situ temperature detection device under predetermined voltage
Relation curve, the predetermined voltage are less than the breakdown voltage of the diode group；
S2 incudes the heat that the adjacent high resistance structure is radiated with the diode group；
S3 applies voltage, the electric current that detection passes through the high resistance structure at the both ends of the high resistance structure；
S4 makes second negative terminal be grounded, apply between first negative terminal and second negative terminal with
The identical predetermined voltages of step S1, detect the leakage current of the diode group, by the relationship of the leakage current and temperature song
Line obtains the temperature of the high resistance structure；And
S5, using described in the electric current, the temperature value and Black electromigration equation calculations when the average failure of high resistance structure
Between.
10. abatement detecting method according to claim 9, which is characterized in that the step S1 includes：
The high resistance structure is heated to predetermined temperature by step S11；
Step S12 makes second negative terminal be grounded under the predetermined temperature, first negative terminal with it is described
Apply the predetermined voltage between second negative terminal, detection is flowed through the electric current of the diode group, obtained in the pre- constant temperature
The correspondence of the leakage current and temperature under degree；And
Step S13, repeating said steps S11 and the step S12, wherein the predetermined temperature in each step S11 is different, obtains
The relation curve of the leakage current and temperature.
11. abatement detecting method according to claim 10, which is characterized in that the first of the in-situ temperature detection device
Positive terminal and the second negative terminal are electrically connected with one end of the high resistance structure.
12. abatement detecting method according to claim 11, which is characterized in that in high resistance structure two in the step S3
When holding the voltage applied, the first negative terminal ground connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410487446.1A CN105467289B (en) | 2014-09-22 | 2014-09-22 | In-situ temperature detection device, chip and the abatement detecting method of high resistance structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410487446.1A CN105467289B (en) | 2014-09-22 | 2014-09-22 | In-situ temperature detection device, chip and the abatement detecting method of high resistance structure |
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| Publication Number | Publication Date |
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| CN105467289A CN105467289A (en) | 2016-04-06 |
| CN105467289B true CN105467289B (en) | 2018-09-18 |
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| CN1982906A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Structure and method for testing metal interconnecting charge transfer |
| CN103808425A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring polycrystalline silicon temperature change |
| CN103824839A (en) * | 2012-11-16 | 2014-05-28 | 中芯国际集成电路制造(上海)有限公司 | Testing structure for reliability analysis in integrated circuit and testing method thereof |
| CN203826374U (en) * | 2014-05-05 | 2014-09-10 | 中芯国际集成电路制造(北京)有限公司 | Test structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1982906A (en) * | 2005-12-13 | 2007-06-20 | 上海华虹Nec电子有限公司 | Structure and method for testing metal interconnecting charge transfer |
| CN103808425A (en) * | 2012-11-08 | 2014-05-21 | 中芯国际集成电路制造(上海)有限公司 | Method for measuring polycrystalline silicon temperature change |
| CN103824839A (en) * | 2012-11-16 | 2014-05-28 | 中芯国际集成电路制造(上海)有限公司 | Testing structure for reliability analysis in integrated circuit and testing method thereof |
| CN203826374U (en) * | 2014-05-05 | 2014-09-10 | 中芯国际集成电路制造(北京)有限公司 | Test structure |
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