CN206332024U - Electro-migration testing structure - Google Patents
Electro-migration testing structure Download PDFInfo
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- CN206332024U CN206332024U CN201621360987.9U CN201621360987U CN206332024U CN 206332024 U CN206332024 U CN 206332024U CN 201621360987 U CN201621360987 U CN 201621360987U CN 206332024 U CN206332024 U CN 206332024U
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Abstract
The utility model provides a kind of electro-migration testing structure, including：Metal structure to be measured, with the first metal end, the second metal end；Calibrating terminal, including the first test lead, the second test lead, the 3rd test lead, the 4th test lead；Test protection location, including the first cascaded structure, first cascaded structure includes a diode and one and the polysilicon fuse of the Diode series；Wherein, first test lead is connected via the test protection location with the first metal end, and the 3rd test lead is connected with the first metal end, and second test lead, the 4th test lead are connected with second metal end.By the implementation of such scheme, the cost of electro-migration testing and the complexity of test are reduced, the accuracy of test result is not influenceed, its test structure manufacturing process is simple.
Description
Technical field
The utility model belongs to technical field of semiconductors, more particularly to a kind of electro-migration testing structure.
Background technology
With the sustainable development of integrated circuit technique, by integrated more devices on chip, chip also will be using faster
Speed.Under the propulsion of these requirements, the physical dimension of device will constantly be reduced, and constantly green wood is used in chip manufacturing process
Material, new technology and new manufacturing process.
Electromigration (EM) is one of main failure mechanism in microelectronic component, and electromigration causes the open circuit of metallization and short
Road, increases element leakage, and its inherent mechanism is the momentum transfer between electronics and metallic atom.In device to sub-micron, depth
After sub-micron development, the width of metal wire constantly reduces, and current density is continuously increased, it is easier to failed because of electromigration.Therefore,
With the progress of technique, EM evaluation receives much concern.
Wherein, isothermal migration tests (ISO-EM) are a kind of important test modes, and Fig. 1 is the electricity of isothermal in the prior art
The structure of migration test, including the first test lead 11, the second test lead 12, the 3rd test lead 13, the 4th test lead 14 and treat
Metal structure 15 is surveyed, the metal structure 15 to be measured has the first metal end 151, the second metal end 152, wherein, described first
Test lead 11, the 3rd test lead 13 are connected with the first metal end 151, and second test lead 12, the described 4th survey
Examination end 14 is connected with second metal end 152, in specific test process, a test lead 11 and described second
The two ends of test lead 12 add certain test voltage respectively, meanwhile, pass through the 3rd test lead 13 and the 4th test lead 14
The time of the resistance saltus step of metal structure 15 to be measured is tested, bound-time is recorded, the life-span of metal structure 15 to be measured is extrapolated,
Wherein, in specific test process, when highdensity electric current flows through the metal structure 15 to be measured, its Joule heat can be increased,
And then cause short circuit occurs after failure, its 3~5ms fused, and then detection card is damaged.
However, there are the following problems for existing test structure：In test process, because isothermal migration tests belong to oblique
Slope is tested, it is necessary to constantly verify test data, therefore, must in time be changed, is not only increased when detecting card and being burned
The complexity of experiment, also increases testing cost, therefore, a kind of reduction testing cost of design and structural complexity, and not
The test structure for reducing effective carry out isothermal electric migration performance assessment of assessment result accuracy is necessary.
Utility model content
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of electro-migration testing knot
Structure, it is of the prior art in electro-migration testing for solving, need to change in time when being burned due to detection card, and cause
Increase experiment complexity and the problem of testing cost.
In order to achieve the above objects and other related objects, the utility model provides a kind of electro-migration testing structure, the electricity
Migration test structure includes：
Metal structure to be measured, with the first metal end, the second metal end；
Calibrating terminal, including the first test lead, the second test lead, the 3rd test lead, the 4th test lead；
Protection location, including the first cascaded structure are tested, first cascaded structure includes a diode and one
With the polysilicon fuse of the Diode series；
Wherein, first test lead is connected via the test protection location with the first metal end, and described the
Three test leads are connected with the first metal end, second test lead, the 4th test lead with second metal
End is connected；
As a kind of preferred scheme of the present utility model, described polysilicon fuse one end in first cascaded structure with
The first metal end is connected, and the other end of the polysilicon fuse is connected with the negative pole of the diode, two pole
The positive pole of pipe is connected with first test lead.
As a kind of preferred scheme of the present utility model, the test protection location includes multiple first strings in parallel
It is coupled structure.
As a kind of preferred scheme of the present utility model, the test protection location also includes the second cascaded structure, described
Second cascaded structure and several described first tandem construction parallels, wherein, second cascaded structure includes a diode
And one with the polysilicon fuse of the Diode series, described polysilicon fuse one end is connected with the first metal end
Connect, the other end of the polysilicon fuse is connected with the positive pole of the diode, the negative pole of the diode and described first
Test lead is connected.
As a kind of preferred scheme of the present utility model, the test protection location includes multiple second strings in parallel
It is coupled structure.
As a kind of preferred scheme of the present utility model, described polysilicon fuse one end in first cascaded structure with
The first metal end is connected, and the polysilicon fuse other end is connected with the positive pole of the diode, the diode
Negative pole be connected with first test lead.
As a kind of preferred scheme of the present utility model, the test protection location includes multiple first strings in parallel
It is coupled structure.
As a kind of preferred scheme of the present utility model, the test protection location also includes the second cascaded structure, described
Second cascaded structure and several described first tandem construction parallels, wherein, second cascaded structure includes a diode
And one with the polysilicon fuse of the Diode series, described polysilicon fuse one end is connected with the first metal end
Connect, the polysilicon fuse other end is connected with the negative pole of the diode, the positive pole of the diode is surveyed with described first
Examination end is connected.
As a kind of preferred scheme of the present utility model, the electro-migration testing structure also includes some through hole lines,
Wherein, first test lead passes through the through hole line and first metal via the test protection location
End is connected, and the 3rd test lead is connected by the through hole line with the first metal end, second test lead,
4th test lead is connected by the through hole line with second metal end.
As described above, electro-migration testing structure provided by the utility model, in specific operation process, with having as follows
Beneficial effect：
1) it can prevent from detecting card wreck on the premise of test result accuracy is ensured, reduce testing cost and multiple
Polygamy；
2) it is effective to carry out isothermal electric migration performance assessment；
3) extra mask layer need not be increased in electro-migration testing structure manufacturing process, manufacturing process is simple；
4) test process is simple, is not required to other hardware supporteds.
Brief description of the drawings
Fig. 1 is shown as the electro-migration testing structure schematic diagram provided in the prior art.
Fig. 2 is shown as the schematic diagram of the electro-migration testing structure of the offer of the utility model embodiment one.
Fig. 3 is shown as the schematic diagram of the electro-migration testing structure of the offer of the utility model embodiment two.
Component label instructions
11 first test leads
12 second test leads
13 the 3rd test leads
14 the 4th test leads
15 metal structures to be measured
151 the first metal ends
152 second metal ends
21 first test leads
22 second test leads
23 the 3rd test leads
24 the 4th test leads
25 metal structures to be measured
251 the first metal ends
252 second metal ends
26 through hole lines
31 first cascaded structures
311 diodes
312 polysilicon fuses
32 second cascaded structures
Embodiment
Illustrate embodiment of the present utility model below by way of specific instantiation, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages of the present utility model and effect easily.The utility model can also be by addition
Different embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints with answering
With, without departing from it is of the present utility model spirit under carry out various modifications or alterations.
Fig. 2 is referred to Fig. 3.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of utility model, though only display is with relevant component in the utility model rather than according to during actual implement in diagram
Component count, shape and size are drawn, and kenel, quantity and the ratio of each component can change for a kind of random during its actual implementation
Become, and its assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in Fig. 2 the utility model provides a kind of electro-migration testing structure, it is characterised in that the electro-migration testing
Structure includes：Metal structure 25 to be measured, with the first metal end 251, the second metal end 252；Calibrating terminal, including the first test
Hold the 21, second test lead 22, the 3rd test lead 23, the 4th test lead 24；Protection location, including the first cascaded structure 31 are tested,
First cascaded structure 31 includes a diode 311 and a polysilicon fuse connected with the diode 311
312；Wherein, first test lead is connected with 21 first voltage sources, second test lead 22 and the second voltage source
It is connected, first test lead 21 is connected via the test protection location with the first metal end 251, the described 3rd
Test lead 23 is connected with the first metal end 251, and second test lead 22, the 4th test lead 24 are with described
Two metal ends 252 are connected；
Wherein, the diode 311 in first cascaded structure 31 is any diode, is not limited herein.
As an example, the one end of the polysilicon fuse 312 and the first metal end in first cascaded structure 31
251 are connected, and the other end of the polysilicon fuse 312 is connected with the negative pole of the diode 311, the diode 311
Positive pole be connected with first test lead 21.
It should be noted that the magnitude of voltage for the first voltage source that above-mentioned example is connect in first test lead 21 is big
Worked during the magnitude of voltage of the second voltage source connect in second test lead 22, now electric current is flowed to by first test lead
Second test lead, as shown in the direction of arrow in Fig. 2.
As an example, the test protection location includes multiple first cascaded structures 31 in parallel；With described in Fig. 2
The quantity of first cascaded structure 31 is two as an example, but being not limited thereto in actual example, first tandem junction
The quantity of structure 31 can for one, three or more.
Wherein, multiple first cascaded structures 31 in parallel can make the electro-migration testing structure adapt to bigger electricity
The electro-migration testing structure of flow valuve, i.e. the present embodiment can be applicable different size of current value, be surveyed so as to improve the electromigration
Try the widely applicable property of structure.
As an example, the electro-migration testing structure also includes some through hole lines 26, wherein, first test lead 21
It is connected via the test protection location by the through hole line 26 with the first metal end 251, the 3rd test
End 23 is connected by the through hole line 26 with the first metal end 251, second test lead 22, the 4th test
End 24 is connected by the through hole line 26 with second metal end 252.
In specific operating process, add certain magnitude of voltage in the first voltage source and the second voltage source two ends, then
Can produce certain current value in the metal structure 25 to be measured and first cascaded structure 31, with test after
Continuous, the weakness position of the metal structure to be measured is opened, and short circuit then occurs, now, the polysilicon fuse 312 fuses, its
Fusing time is about 0.1~2 μ s after the current value at the two ends of polysilicon fuse 312 exceedes its rated value, it is preferable that
The time is 1~2 μ s, the time required for record resistance saltus step, so as to calculate the life-span of the metal structure to be measured 25.
Embodiment two
As shown in figure 3, the utility model also provides a kind of electro-migration testing structure, the electromigration described in the present embodiment is surveyed
Examination structure is roughly the same with the structure of the electro-migration testing structure described in embodiment one, and the difference of the two is：In embodiment
In two, it is described test protection location also include the second cascaded structure 32, second cascaded structure 32 with several described first
Cascaded structure 31 is in parallel, wherein, second cascaded structure 32 includes a diode 311 and one and the diode string
The polysilicon fuse 312 of connection, described one end of polysilicon fuse 312 is connected with the first metal end 251, and the polysilicon melts
The other end of line 312 is connected with the positive pole of the diode 311, the negative pole of the diode 311 and first test lead
21 are connected.
It should be noted that embodiment adds second cascaded structure 32, it can be seen that the conducting of its diode
The conducting direction of direction and first cascaded structure 31 is on the contrary, the first voltage source connect in first test lead 21
Magnitude of voltage second cascaded structure 32 described in when being less than the magnitude of voltage of the second voltage source that is connect of second test lead 22 work,
I.e. electric current flows to first test lead 21 from second test lead 22, so that the electro-migration testing knot that the present embodiment is provided
Structure can be applicable the electric current of different directions.
As an example, the test protection location includes multiple second cascaded structures 32 in parallel.
It should be noted that the quantity of first cascaded structure 31 and the quantity of second cascaded structure 32, according to
The predetermined value (for example fusing point) of magnitude of voltage and the polysilicon fuse between the first voltage source and the second voltage source
It is determined that.
The other structures of the electro-migration testing structure in the present embodiment and the electro-migration testing described in embodiment one
Structure is identical, specifically refers to embodiment one, is not repeated herein.
Embodiment three
The utility model also provides a kind of electro-migration testing structure, electro-migration testing structure and reality described in the present embodiment
The structure for applying electro-migration testing structure described in example one is roughly the same, and the difference of the two is：In embodiment one, described
One end of the polysilicon fuse 312 in one cascaded structure 31 is connected with the first metal end 251, the polysilicon fuse
312 other end is connected with the negative pole of the diode 311, the positive pole of the diode 311 and first test lead 21
It is connected；And in the present embodiment, the one end of the polysilicon fuse 312 and first metal in first cascaded structure 31
End 251 is connected, and the other end of polysilicon fuse 312 is connected with the positive pole of the diode 311, the diode 311
Negative pole be connected with first test lead 21.
As an example, the test protection location includes multiple first cascaded structures 31 in parallel.
The other structures of the electro-migration testing structure in the present embodiment and the electro-migration testing described in embodiment one
Structure is identical, specifically refers to embodiment one, is not repeated herein.
Example IV
The utility model also provides a kind of electro-migration testing structure, electro-migration testing structure and reality described in the present embodiment
The structure for applying electro-migration testing structure described in example two is roughly the same, and the difference of the two is：In embodiment two, described
One end of the polysilicon fuse 312 in one cascaded structure 31 is connected with the first metal end 251, the polysilicon fuse
312 other end is connected with the negative pole of the diode 311, the positive pole of the diode 311 and first test lead 21
It is connected, second cascaded structure 32 includes a diode 311 and one melts with the polysilicon of the Diode series
Line 312, described one end of polysilicon fuse 312 is connected with the first metal end 251, the polysilicon fuse 312 it is another
End is connected with the positive pole of the diode 311, and the negative pole of the diode 311 is connected with first test lead 21；And
In the present embodiment, one end of the polysilicon fuse 312 in first cascaded structure 31 is connected with the first metal end 251
Connect, the other end of polysilicon fuse 312 is connected with the positive pole of the diode 311, the negative pole of the diode 311 and institute
State the first test lead 21 to be connected, second cascaded structure 32 includes a diode 311 and one and the diode
The polysilicon fuse 312 of 311 series connection, described one end of polysilicon fuse 312 is connected with the first metal end 251, described many
The other end of crystal silicon fuse 312 is connected with the negative pole of the diode 311, and the positive pole of the diode 311 is surveyed with described first
Examination end 21 is connected.
The other structures of the electro-migration testing structure in the present embodiment and the electro-migration testing described in embodiment two
Structure is identical, specifically refers to embodiment two, is not repeated herein.
In summary, the utility model provides a kind of electro-migration testing structure, and the electro-migration testing structure includes：It is to be measured
Metal structure, with the first metal end, the second metal end；Calibrating terminal, including the first test lead, the second test lead, the 3rd survey
Try end, the 4th test lead；Protection location, including the first cascaded structure are tested, first cascaded structure includes a diode
And one with the polysilicon fuses of the Diode series；Wherein, first test lead is via the test protection location
It is connected with the first metal end, the 3rd test lead is connected with the first metal end, second test lead, institute
The 4th test lead is stated with second metal end to be connected.By the implementation of such scheme, overcome in electro-migration testing,
Need to change in time when being burned due to detection card, and the increase experiment complexity that causes and the problem of testing cost,
The electro-migration testing structure that the utility model is provided reduces testing cost and complexity, but does not reduce the accurate of test result
Degree；Isothermal electric migration performance assessment can effectively be carried out；And it need not increase in electro-migration testing structure manufacturing process
Extra mask layer, manufacturing process is simple；Test process is simple, is not required to other hardware supporteds.
Above-described embodiment only illustrative principle of the present utility model and its effect are new not for this practicality is limited
Type.Any person skilled in the art can all be carried out without prejudice under spirit and scope of the present utility model to above-described embodiment
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the essence disclosed in the utility model
God and all equivalent modifications completed under technological thought or change, should be covered by claim of the present utility model.
Claims (9)
1. a kind of electro-migration testing structure, it is characterised in that the electro-migration testing structure includes：
Metal structure to be measured, with the first metal end, the second metal end；
Calibrating terminal, including the first test lead, the second test lead, the 3rd test lead, the 4th test lead；
Protection location, including the first cascaded structure are tested, first cascaded structure includes a diode and one and institute
State the polysilicon fuse of Diode series；
Wherein, first test lead is connected via the test protection location with the first metal end, and the described 3rd surveys
Examination end be connected with the first metal end, second test lead, the 4th test lead with the second metal end phase
Connection.
2. electro-migration testing structure according to claim 1, it is characterised in that described many in first cascaded structure
Crystal silicon fuse one end is connected with the first metal end, the negative pole phase of the other end of the polysilicon fuse and the diode
Connection, the positive pole of the diode is connected with first test lead.
3. electro-migration testing structure according to claim 2, it is characterised in that the test protection location include it is multiple simultaneously
First cascaded structure of connection.
4. electro-migration testing structure according to claim 3, it is characterised in that the test protection location also includes second
Cascaded structure, second cascaded structure and several described first tandem construction parallels,
Wherein, second cascaded structure includes a diode and one and the polysilicon fuse of the Diode series,
Described polysilicon fuse one end is connected with the first metal end, the other end of the polysilicon fuse and the diode
Positive pole is connected, and the negative pole of the diode is connected with first test lead.
5. electro-migration testing structure according to claim 4, it is characterised in that the test protection location include it is multiple simultaneously
Second cascaded structure of connection.
6. electro-migration testing structure according to claim 1, it is characterised in that described many in first cascaded structure
Crystal silicon fuse one end is connected with the first metal end, and the polysilicon fuse other end is connected with the positive pole of the diode
Connect, the negative pole of the diode is connected with first test lead.
7. electro-migration testing structure according to claim 6, it is characterised in that the test protection location include it is multiple simultaneously
First cascaded structure of connection.
8. electro-migration testing structure according to claim 7, it is characterised in that the test protection location also includes second
Cascaded structure, second cascaded structure and several described first tandem construction parallels,
Wherein, second cascaded structure includes a diode and one and the polysilicon fuse of the Diode series,
Described polysilicon fuse one end is connected with the first metal end, and the polysilicon fuse other end is negative with the diode
Pole is connected, and the positive pole of the diode is connected with first test lead.
9. electro-migration testing structure according to claim 1, it is characterised in that if the electro-migration testing structure also includes
Dry through hole line,
Wherein, first test lead passes through the through hole line and the first metal end phase via the test protection location
Connection, the 3rd test lead is connected by the through hole line with the first metal end, second test lead, described
4th test lead is connected by the through hole line with second metal end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621360987.9U CN206332024U (en) | 2016-12-12 | 2016-12-12 | Electro-migration testing structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621360987.9U CN206332024U (en) | 2016-12-12 | 2016-12-12 | Electro-migration testing structure |
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| CN206332024U true CN206332024U (en) | 2017-07-14 |
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| CN201621360987.9U Active CN206332024U (en) | 2016-12-12 | 2016-12-12 | Electro-migration testing structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110456249A (en) * | 2019-08-27 | 2019-11-15 | 上海华力微电子有限公司 | A kind of test circuit for preventing pad and probe card from burning and its application method |
-
2016
- 2016-12-12 CN CN201621360987.9U patent/CN206332024U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110456249A (en) * | 2019-08-27 | 2019-11-15 | 上海华力微电子有限公司 | A kind of test circuit for preventing pad and probe card from burning and its application method |
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