CN105458907A - Surface polishing method for tellurium dioxide crystals - Google Patents
Surface polishing method for tellurium dioxide crystals Download PDFInfo
- Publication number
- CN105458907A CN105458907A CN201510866046.6A CN201510866046A CN105458907A CN 105458907 A CN105458907 A CN 105458907A CN 201510866046 A CN201510866046 A CN 201510866046A CN 105458907 A CN105458907 A CN 105458907A
- Authority
- CN
- China
- Prior art keywords
- polishing
- tellurium dioxide
- rough
- powder
- dispersion liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 27
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 239000006185 dispersion Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 7
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 6
- 239000010432 diamond Substances 0.000 claims abstract description 6
- 239000010426 asphalt Substances 0.000 claims abstract description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 3
- 239000000843 powder Substances 0.000 claims description 24
- 229910052714 tellurium Inorganic materials 0.000 claims description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 101100412856 Mus musculus Rhod gene Proteins 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 150000002910 rare earth metals Chemical class 0.000 claims description 2
- 239000013521 mastic Substances 0.000 abstract 1
- XUMBMVFBXHLACL-UHFFFAOYSA-N Melanin Chemical compound O=C1C(=O)C(C2=CNC3=C(C(C(=O)C4=C32)=O)C)=C2C4=CNC2=C1C XUMBMVFBXHLACL-UHFFFAOYSA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a surface polishing method for tellurium dioxide crystals. The surface polishing method includes the three steps of rough polishing, fine polishing and water-free polishing. According to the method, rough polishing turbid liquid with the cerium oxide center grain size being 1 micrometer and the concentration ranging from 60 g/L to 90 g/L and fine polishing dispersion liquid with the diamond powder center grain size being 0.25 micrometer and the concentration ranging from 40 g/L to 50 g/L are prepared; rough polishing and fine polishing are conducted on tellurium dioxide on a single shaft machine in cooperation with No. 55 bitumen mastic produced by the Universal company in America, the damage layer and scratches on the surface of the tellurium dioxide are removed; and then a water-free dispersion solution with the diamond powder center particle diameter being 0.05 micrometer and the concentration ranging from 40 g/L to 50 g/L is prepared, manual water-free polishing is conducted in cooperation with black polishing lint produced by the Rohm and Haas company, and air-slake hard spots are removed. According to the surface polishing method for the tellurium dioxide crystals, the smoothness of the polished surface of the tellurium dioxide can reach 10/5, roughness reaches the sub-nanometer level, and by the adoption of the method, the surface quality requirement of acousto-optic crystal application is met.
Description
Technical field
The present invention relates to crystal pro cessing technical field, particularly a kind of surface polishing method of tellurium dioxide crystal.
Background technology
Tellurium dioxide crystal, molecular formula is TeO
2, its crystal structure is tetragonal lattice structure, is a kind of acousto-optic crsytal of excellence.Because tellurium dioxide is slightly soluble in water, meeting strong acid and strong base can decompose, if so deal with improperly in tellurium dioxide polishing crystal process, polished surface can be covered with the pit of deliquescence, affects its application on acousto-optical device.In addition, tellurium dioxide character is soft, uses unmatched polishing auxiliary material inevitably can occur cut.At present, the disclosed relevant report about tellurium dioxide plane of crystal finishing method is rarely had.The invention provides a kind of surface polishing method of tellurium dioxide crystal, solve the problem of tellurium dioxide plane of crystal not easily polishing.
Summary of the invention
Technical problem to be solved by this invention: the surface polishing method providing a kind of tellurium dioxide crystal, solves the easy tide in tellurium dioxide surface and easily goes out the problems such as cut, improving tellurium dioxide plane of crystal fineness.
The technical solution adopted in the present invention is as follows:
(1) first polishing auxiliary material is configured:
Rough polishing powder Rare-Earth Content >=95%, cerium-oxide contents > 70%, medium particle diameter D50 are 1.0 μm, and pH value is 6-7, and this rough polishing powder is mixed the suspension that deionized water is configured to 60 ~ 90g/L; Diamond dust content >=95% in essence polishing powder, medium particle diameter D50 is 0.25 μm, and pH value is 6-7, and this smart polishing powder is mixed the dispersion liquid that deionized water is configured to 40 ~ 50g/L; Diamond dust content >=95% in anhydrous polishing powder, medium particle diameter D50 is 0.05 μm, and pH value is 6-7, and this anhydrous polishing powder is mixed the dispersion liquid that ethanol is configured to 40 ~ 50g/L; Rough polishing dish and smart No. 55 asphalt adhesives all selecting Worldwide, Inc of the U.S. to produce of dumping, at the groove of panel surface evolution shape grid.Without the black polishing flannelet that water polishing selects Rhom and Hass to produce.
(2) method of rough polishing, on single shaft machine, uses rough polishing powder suspension and pitch dish polishing tellurium oxide surface, removes the damage layer roughly ground and cause.
(3) smart throwing method, on single shaft machine, uses smart polishing powder dispersion liquid and pitch dish polishing tellurium oxide surface, removes the cut that rough polishing causes.
(4) anhydrous finishing method, on single shaft machine, uses anhydrous polishing powder dispersion liquid and black polishing flannelet polishing tellurium oxide surface, removes essence and throw the deliquescence pit caused.
The invention provides a kind of surface polishing method of tellurium dioxide crystal, the problem of the surface solving tellurium dioxide crystal not easily polishing.After the method for the invention polishing, tellurium dioxide surface smoothness can reach 10/5, and it is other that surface roughness can reach Subnano-class, meets the optical surface quality requirement of acousto-optic crsytal application.
Detailed description of the invention
Below by way of specific embodiment, the specific embodiment of the present invention is described in further detail.
A surface polishing method for tellurium dioxide crystal, described method step is as follows:
(1) first configure polishing auxiliary material, rough polishing powder mixes the suspension that deionized water is configured to 60 ~ 90g/L.Smart polishing powder is mixed the dispersion liquid that deionized water is configured to 40 ~ 50g/L, super 30min in ultrasonic tank.Anhydrous polishing powder is mixed the dispersion liquid that ethanol is configured to 40 ~ 50g/L, super 30min in ultrasonic tank.Asphalt adhesive is prepared into dish, evolution grid groove.
(2) method of rough polishing, on single shaft machine, uses rough polishing powder suspension and pitch dish polishing tellurium oxide surface.Single shaft machine rotating speed 9rpm/min, slew rate 7rpm/min, removing board gravity pressure does not additionally increase pressure outward.Polishing time 30min, removes surface and roughly grinds the damage layer caused, about 20um.
(3) smart throwing method, on single shaft machine, uses smart polishing powder dispersion liquid and pitch dish polishing tellurium oxide surface.Single shaft machine rotating speed 5rpm/min, slew rate 4rpm/min, removing board gravity pressure does not additionally increase pressure outward.Polishing time 20min, removes the cut that surperficial rough polishing causes, about 20um.
(4) anhydrous finishing method, on single shaft machine, manually use anhydrous polishing powder dispersion liquid and black melanin polishing flannelet polishing tellurium oxide surface, remove essence and throw the deliquescence pit caused, single shaft machine rotating speed 5rpm/min, polishing time is about 5min.
Claims (2)
1. a surface polishing method for tellurium dioxide crystal, is characterized in that, described method step is as follows:
First polishing auxiliary material is configured; Method of rough polishing, on single shaft machine, uses rough polishing powder suspension and pitch dish polishing tellurium oxide surface, removes the damage layer roughly ground and cause; Essence throwing method, on single shaft machine, uses smart polishing powder dispersion liquid and pitch dish polishing tellurium oxide surface, removes the cut that rough polishing causes; Anhydrous finishing method, on single shaft machine, uses anhydrous polishing powder dispersion liquid and black polishing flannelet polishing tellurium oxide surface, removes essence and throw the deliquescence pit caused.
2. configuration polishing auxiliary material as claimed in claim 1, its feature is as follows:
Rough polishing powder Rare-Earth Content >=95%, cerium-oxide contents > 70%, medium particle diameter D50 are 1.0 μm, and pH value is 6-7, and this rough polishing powder is mixed the suspension that deionized water is configured to 60 ~ 90g/L; Diamond dust content >=95% in essence polishing powder, medium particle diameter D50 is 0.25 μm, and pH value is 6-7, and this smart polishing powder is mixed the dispersion liquid that deionized water is configured to 40 ~ 50g/L; Diamond dust content >=95% in anhydrous polishing powder, medium particle diameter D50 is 0.05 μm, and pH value is 6-7, and this anhydrous polishing powder is mixed the dispersion liquid that ethanol is configured to 40 ~ 50g/L; Rough polishing dish and smart No. 55 asphalt adhesives all selecting Worldwide, Inc of the U.S. to produce of dumping, at the groove of panel surface evolution shape grid, without the black polishing flannelet that water polishing selects Rhom and Hass to produce.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510866046.6A CN105458907A (en) | 2015-12-02 | 2015-12-02 | Surface polishing method for tellurium dioxide crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510866046.6A CN105458907A (en) | 2015-12-02 | 2015-12-02 | Surface polishing method for tellurium dioxide crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105458907A true CN105458907A (en) | 2016-04-06 |
Family
ID=55597295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510866046.6A Pending CN105458907A (en) | 2015-12-02 | 2015-12-02 | Surface polishing method for tellurium dioxide crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105458907A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109396967A (en) * | 2018-12-12 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of cmp method for cadmium selenide crystal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1480305A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid |
| CN102729132A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for performing wax-free grinding and fine polishing on CdZnTe wafer |
| CN103659556A (en) * | 2013-11-12 | 2014-03-26 | 江苏吉星新材料有限公司 | Polishing method for sapphire tube |
| CN104589194A (en) * | 2015-01-28 | 2015-05-06 | 山东阳谷恒晶光电有限公司 | Method for polishing potassium dideuterium phosphate crystals |
-
2015
- 2015-12-02 CN CN201510866046.6A patent/CN105458907A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1480305A (en) * | 2002-09-06 | 2004-03-10 | 大连淡宁实业发展有限公司 | Technique for manufacturing batch size of monocrystal chip of yttrium vanadic acid |
| CN102729132A (en) * | 2012-06-25 | 2012-10-17 | 中国科学院上海技术物理研究所 | Method for performing wax-free grinding and fine polishing on CdZnTe wafer |
| CN103659556A (en) * | 2013-11-12 | 2014-03-26 | 江苏吉星新材料有限公司 | Polishing method for sapphire tube |
| CN104589194A (en) * | 2015-01-28 | 2015-05-06 | 山东阳谷恒晶光电有限公司 | Method for polishing potassium dideuterium phosphate crystals |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109396967A (en) * | 2018-12-12 | 2019-03-01 | 中国电子科技集团公司第四十六研究所 | A kind of cmp method for cadmium selenide crystal |
| CN109396967B (en) * | 2018-12-12 | 2020-10-02 | 中国电子科技集团公司第四十六研究所 | Chemical mechanical polishing method for cadmium selenide crystal |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160406 |