CN105449107A - Top-emitting OLED device and preparation method thereof - Google Patents
Top-emitting OLED device and preparation method thereof Download PDFInfo
- Publication number
- CN105449107A CN105449107A CN201410404886.6A CN201410404886A CN105449107A CN 105449107 A CN105449107 A CN 105449107A CN 201410404886 A CN201410404886 A CN 201410404886A CN 105449107 A CN105449107 A CN 105449107A
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode layer
- oled device
- reflective metal
- transparent electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention provides a top-emitting OLED device and a preparation method thereof. The top-emitting OLED device includes a substrate, a reflective metal layer, an organic functional layer and a second electrode layer in sequence, a scattering layer and a transparent electrode layer are also arranged between the reflective metal layer and the organic functional layer, both sides of the scattering layer are in contact with the reflective metal layer and the transparent electrode layer, and the other side of the transparent electrode layer is in contact with the organic functional layer. According to the top-emitting OLED device provided by the invention, the scattering layer and the transparent electrode layer are arranged between the reflective metal layer and a luminous layer in sequence, and the scattering layer mainly eliminates a microcavity effect existing in a top-emitting device structure, thereby eliminating the problem of the visual angle of the device.
Description
Technical field
The present invention relates to lighting technical field, be specifically related to a kind of top-illuminating OLED device and preparation method thereof.
Background technology
OLED can be divided into bottom emitting type and top emission type by the taking-up mode by light, only taking out from top of top emission type organic electroluminescence device, reach maximum to make the extraction efficiency of light, therefore device generally adopts metal that reflectivity is higher as bottom reflection mirror, top is then for ease of transparent or half transflective electrode that light sends, but the high-energy made in electrode process can cause damage to organic layer during employing transparency electrode; Adopt semitransparent electrode can there is the microcavity effect of round multiple reflections generation, produce serious viewing angle problem.
Disclose a kind of organic electroluminescence device and preparation method thereof in Chinese patent literature CN102468444A, comprising: a substrate; One anode, it is combined in one of described substrate on the surface; One light scattering layer, it is combined on the described anode surface relative with described substrate; One organic electroluminescence structure, it is combined on the described light scattering layer surface relative with described anode; One negative electrode, it is combined on the described organic electroluminescence structure surface relative with described light scattering layer.Organic electroluminescence device of the present invention has additional light scattering layer in its structure, make organic electroluminescence device send light there is scattering at this light scattering layer interface, thus significantly improve the viewing angle problem of device; But add light scattering layer between device two electrodes, because the resistance of light scattering layer is very high, the non-constant of conductivity causes device efficiency very poor.
Summary of the invention
For this reason, to be solved by this inventionly reach the device performance of wide viewing angle be and improve device efficiency and light extraction efficiency while, the invention provides a kind of top-illuminating OLED device and preparation method thereof.
The invention provides a kind of top-illuminating OLED device on the one hand, comprise underlay substrate, reflective metal layer, organic function layer and the second electrode lay successively, scattering layer and transparent electrode layer is also provided with between described reflective metal layer and organic function layer, the both sides of described scattering layer contact with described reflective metal layer and transparent electrode layer respectively, and the opposite side of described transparent electrode layer contacts with described organic function layer.
Described organic function layer comprises hole transmission layer, luminescent layer and electron transfer layer successively, and the side of described hole transmission layer contacts with described transparent electrode layer.
Described the second electrode lay is semi-transparent metals electrode layer, and its material is gold, silver, magnesium, aluminium, copper, platinum or its alloy.
The thickness of described semi-transparent metals electrode layer is 1-50nm.
The material of described scattering layer be titanium oxide, titanium dioxide, magnesium oxide, zinc oxide, silica, silicon dioxide, zirconium dioxide, the combination of a kind of or above-mentioned multiple material in iron oxide, cupric oxide, lead oxide, manganese oxide, tin oxide, tungsten oxide, its thickness is 0.1-3 micron.
The material of described transparent electrode layer is one or several in ITO, IZO, ZnO, PEDOT-PSS, and its thickness is 0.1-3 micron.
The material of described reflective metal layer is gold, silver, magnesium, aluminium, copper, platinum or its alloy.
On the other hand, the invention provides a kind of preparation method of top-illuminating OLED device, described method comprises the steps:
Step one, provides underlay substrate, and makes reflective metal layer on underlay substrate;
Step 2, the surface of reflective metal layer makes scattering layer and transparent electrode layer successively;
Step 3, puts into evaporation chamber by the underlay substrate in step 2, and evaporation hole transmission layer, luminescent layer, electron transfer layer and the second electrode lay successively on transparent electrode layer, obtain top-illuminating OLED device.
The mode making scattering layer and transparent electrode layer in described step 2 on the surface of reflective metal layer is successively evaporation, sputtering or wet-layer preparation.
The second electrode lay in described step 3 is semi-transparent metals electrode layer.
The present invention has following beneficial effect relative to prior art:
A the present invention by having set gradually scattering layer and transparent electrode layer between reflective metal layer and luminescent layer, and scattering layer mainly eliminates microcavity effect existing in top illuminating device structure, abatement device viewing angle problem.
B adopt in ITO, IZO, ZnO, PEDOT-PSS one or more etc. transparent material carry out the electrode layer of alternative reflective metal layer as device as transparent electrode layer, electric charge is made to be present in transparency electrode surface, eliminate the electricity slurry effect of metal electrode device, because at metal electrode near interface, the electric charge on surface is present in interface, make electromagnetic wave be limited in interface, the light wave frequency range absorption characteristic that metal exists, make light wave be covered, typically with metal layers absorption or cancellation.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is OLED structural representation provided by the invention.
In figure: 1-underlay substrate; 2-reflective metal layer; 3-scattering layer; 4-transparent electrode layer; 5-luminescent layer; 6-the second electrode lay.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
As shown in Fig. 1 structure, the invention provides a kind of top-illuminating OLED device, comprise underlay substrate 1, reflective metal layer 2, organic function layer 5 and the second electrode lay 6 successively, scattering layer 3 and transparent electrode layer 4 is also provided with between reflective metal layer 2 and organic function layer 5, the both sides of scattering layer 3 contact with reflective metal layer 2 and transparent electrode layer 4 respectively, and the opposite side of transparent electrode layer 4 contacts with described organic function layer 5.Organic function layer 5 wherein comprises hole transmission layer, luminescent layer and electron transfer layer successively, and the side of described hole transmission layer contacts with described transparent electrode layer.
The second electrode lay 6 that the present invention is preferred adopted is semi-transparent metals electrode layer, and the material of semi-transparent metals electrode layer is gold, silver, magnesium, aluminium, copper, platinum or its alloy.
The thickness of semi-transparent metals electrode layer is 1-50nm.
The material of described scattering layer is the inorganic particle that can produce light scattering, namely titanium oxide, titanium dioxide, magnesium oxide, zinc oxide, silica, silicon dioxide, zirconium dioxide, the combination of a kind of or above-mentioned multiple material in iron oxide, cupric oxide, lead oxide, manganese oxide, tin oxide, tungsten oxide, its thickness is 0.1-3 micron.
The material of transparent electrode layer is one or several in ITO, IZO, ZnO, PEDOT-PSS, and its thickness is 0.1-3 micron.
Embodiment 1
Illustrate OLED structure and preparation method below, wherein the structure of OLED is: glass substrate/Ag (150nm)/TiO
2(800nm)/ITO (150nm)/NPB (40nm)/ADN:TBPe (7%) (30nm)/Alq
3(20nm)/Mg:Ag (30%) (20nm)/Ag (10nm).
Described in its preparation method is specific as follows:
(1) take clear glass as substrate, make the Ag metal of one deck 150nm thereon as reflective metal layer;
(2) on reflective metal layer, make one deck scattering layer, the thickness of scattering layer is 800nm, and wherein scattering layer manufacturing process comprises:
A) dispersion process: by 15g titanium dioxide, 1.2g dispersant (afcma-4010), 60g solvent (1-Methoxy-2-propyl acetate), obtained solution puts into grinding pot, after fixing grinding pot and grinding post, add 90ml zirconium pearl (note: the amount of zirconium pearl is depending on the volume of grinding pot), grind with gauze elimination zirconium pearl after 3 hours, obtained lapping liquid.Lapping liquid after 1.2 μm of filter paper press filtrations, obtained solution A.After solution A mixes with photoresist (EOC130) ratio 1: 1, obtained solution B;
B) spin-coating film: by above-mentioned obtained solution B, by the photoetching process spin coating of routine, spin-coating film.
(3), after titanium dioxide scattering layer completes, adopt direct current magnetron sputtering process to prepare the ito transparent electrode layer of 150nm, ITO target is indium stannum alloy, its component ratio In: Sn=90%: 10%.In preparation process, partial pressure of oxygen is 0.4Sccm, and argon partial pressure is 20Sccm.After preparing ito transparent electrode layer, then etch ito transparent electrode layer by lithographic method.
(4) evaporation chamber evaporation organic function layer and the second electrode lay is put into.Evaporation hole transmission layer, luminescent layer, electron transfer layer, semi-transparent metals electrode layer successively.Evaporate process middle chamber pressure is lower than 5.0 × 10
-3pa, first the thick NPB of evaporation 40nm is as hole transmission layer; Thick ADN and TBPe of the method evaporation 30nm steamed altogether using double source is as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq3 of evaporation 20nm is as electron transfer layer; Evaporation Mg:Ag (30%), thickness is 20nm, the Ag of evaporation 10nm again on it, overall as semi-transparent metals electrode layer.
Embodiment 2
The structure of OLED is: glass substrate/Au (150nm)/SiO (3um)/IZO (1um)/NPB (40nm)/ADN:TBPe (7%) (30nm)/Alq
3(20nm)/Mg:Ag (30%) (20nm)/Ag (10nm).
Described in its preparation method is specific as follows:
(1) take clear glass as substrate, make the Au metal of one deck 150nm thereon as reflective metal layer;
(2) on reflective metal layer, make one deck silica scattering layer, the thickness of scattering layer is 3um, and manufacture method is by silica dispersion liquid by conventional photoetching process spin coating, spin-coating film.
(3), after silica scattering layer completes, adopt direct current magnetron sputtering process to prepare the IZO transparent electrode layer of 1 micron, after preparing IZO transparent electrode layer, then etch IZO transparent electrode layer by lithographic method.
(4) evaporation chamber evaporation organic function layer and the second electrode lay is put into.Evaporation hole transmission layer, luminescent layer, electron transfer layer, semi-transparent metals electrode layer successively.Evaporate process middle chamber pressure is lower than 5.0 × 10
-3pa, first the thick NPB of evaporation 40nm is as hole transmission layer; Thick ADN and TBPe of the method evaporation 30nm steamed altogether using double source is as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm
3as electron transfer layer; Evaporation Mg:Ag (30%), thickness is 20nm, the Ag of evaporation 10nm again on it, overall as semi-transparent metals electrode layer.
Embodiment 3
The structure of OLED is: glass substrate/Pt (150nm)/ZrO
2(300nm)/PEDOT:PSS (300nm)/NPB (40nm)/ADN:TBPe (7%) (30nm)/Alq
3(20nm)/Mg:Ag (30%) (20nm)/Ag (10nm).Described in its preparation method is specific as follows:
(1) take clear glass as substrate, make the Pt metal of one deck 150nm thereon as reflective metal layer;
(2) on reflective metal layer, one deck ZrO is made
2scattering layer, the thickness of scattering layer is 300nm, by the photoetching process spin coating of routine, spin-coating film.
(3) ZrO
2after scattering layer completes, adopt conventional photoetching process spin coating one deck PEDOT:PSS, thickness is 300nm.After preparing clear PE DOT:PSS electrode layer, then etch transparent electrode layer by lithographic method.
(4) evaporation chamber evaporation organic function layer and the second electrode lay is put into.Evaporation hole transmission layer, luminescent layer, electron transfer layer, semi-transparent metals electrode layer successively.Evaporate process middle chamber pressure is lower than 5.0 × 10
-3pa, first the thick NPB of evaporation 40nm is as hole transmission layer; Thick ADN and TBPe of the method evaporation 30nm steamed altogether using double source is as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq3 of evaporation 20nm is as electron transfer layer; Evaporation Mg:Ag (30%), thickness is 20nm, the Ag of evaporation 10nm again on it, overall as semi-transparent metals electrode layer.
Embodiment 4
The structure of OLED is: glass substrate/Pt (150nm)/ZrO
2(500nm)/ZnO (3um)/NPB (40nm)/ADN:TBPe (7%) (30nm)/Alq
3(20nm)/Cu (10nm).Described in its preparation method is specific as follows:
(1) take clear glass as substrate, make the Pt metal of one deck 150nm thereon as reflective metal layer;
(2) on reflective metal layer, one deck ZrO is made
2scattering layer, the thickness of scattering layer is 500nm, by the photoetching process spin coating of routine, spin-coating film.
(3) ZrO
2after scattering layer completes, adopt conventional photoetching process spin coating layer of ZnO, thickness is 3um.After preparing transparent ZnO electrode layer, then etch transparent electrode layer by lithographic method.
(4) evaporation chamber evaporation organic function layer and the second electrode lay is put into.Evaporation hole transmission layer, luminescent layer, electron transfer layer, semi-transparent metals electrode layer successively.Evaporate process middle chamber pressure is lower than 5.0 × 10
-3pa, first the thick NPB of evaporation 40nm is as hole transmission layer; Thick ADN and TBPe of the method evaporation 30nm steamed altogether using double source is as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq3 of evaporation 20nm is as electron transfer layer; The Cu of evaporation 10nm, overall as semi-transparent metals electrode layer.
Embodiment 5
The structure of OLED is: glass substrate/Pt (150nm)/ZrO
2(2um)/ZnO (100nm)/NPB (40nm)/ADN:TBPe (7%) (30nm)/Alq
3(20nm)/Cu (50nm).Described in its preparation method is specific as follows:
(1) take clear glass as substrate, make the Pt metal of one deck 150nm thereon as reflective metal layer;
(2) on reflective metal layer, one deck ZrO is made
2scattering layer, the thickness of scattering layer is 2um, by the photoetching process spin coating of routine, spin-coating film.
(3) ZrO
2after scattering layer completes, adopt conventional photoetching process spin coating layer of ZnO, thickness is 100nm.After preparing transparent ZnO electrode layer, then etch transparent electrode layer by lithographic method.
(4) evaporation chamber evaporation organic function layer and the second electrode lay is put into.Evaporation hole transmission layer, luminescent layer, electron transfer layer, semi-transparent metals electrode layer successively.Evaporate process middle chamber pressure is lower than 5.0 × 10
-3pa, first the thick NPB of evaporation 40nm is as hole transmission layer; Thick ADN and TBPe of the method evaporation 30nm steamed altogether using double source is as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq3 of evaporation 20nm is as electron transfer layer; The Cu of evaporation 50nm, overall as semi-transparent metals electrode layer.
Comparative example
The structure of OLED is: glass substrate/Au (150nm)/SiO (3um)/NPB (40nm)/ADN:TBPe (7%) (30nm)/Alq
3(20nm)/Mg:Ag (30%) (20nm)/Ag (10nm).
Described in its preparation method is specific as follows:
(1) take clear glass as substrate, make the Au metal of one deck 150nm thereon as reflective metal layer;
(2) on reflective metal layer, make one deck silica scattering layer, the thickness of scattering layer is 3um, and manufacture method is by silica dispersion liquid by conventional photoetching process spin coating, spin-coating film.
(3) evaporation chamber evaporation organic function layer and the second electrode lay is directly put into.Evaporation hole transmission layer, luminescent layer, electron transfer layer, semi-transparent metals electrode layer successively.Evaporate process middle chamber pressure is lower than 5.0 × 10
-3pa, first the thick NPB of evaporation 40nm is as hole transmission layer; Thick ADN and TBPe of the method evaporation 30nm steamed altogether using double source is as luminescent layer, and the ratio of through-rate control TBPe in ADN is 7%; The Alq of evaporation 20nm
3as electron transfer layer; Evaporation Mg:Ag (30%), thickness is 20nm, the Ag of evaporation 10nm again on it, overall as semi-transparent metals electrode layer.
The effect of each embodiment is as follows:
| Sequence number | Embodiment | 10A/m 2Lower brightness (cd/m 2Candela/square metre) |
| 1 | Embodiment 1 | 1570 |
| 2 | Embodiment 2 | 1480 |
| 3 | Embodiment 3 | 1350 |
| 4 | Embodiment 4 | 1400 |
| 5 | Embodiment 5 | 1380 |
| 6 | Comparative example | 300 |
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection scope of the present invention.
Claims (10)
1. a top-illuminating OLED device, comprise underlay substrate, reflective metal layer, organic function layer and the second electrode lay successively, it is characterized in that, scattering layer and transparent electrode layer is also provided with between described reflective metal layer and organic function layer, the both sides of described scattering layer contact with described reflective metal layer and transparent electrode layer respectively, and the opposite side of described transparent electrode layer contacts with described organic function layer.
2. top-illuminating OLED device according to claim 1, is characterized in that, described organic function layer comprises hole transmission layer, luminescent layer and electron transfer layer successively, and the side of described hole transmission layer contacts with described transparent electrode layer.
3. according to the top-illuminating OLED device that claim 1 is stated, it is characterized in that, described the second electrode lay is semi-transparent metals electrode layer, and its material is gold, silver, magnesium, aluminium, copper, platinum or its alloy.
4. top-illuminating OLED device according to claim 3, is characterized in that, the thickness of described semi-transparent metals electrode layer is 1-50nm.
5. according to the top-illuminating OLED device that claim 1 is stated, it is characterized in that, the material of described scattering layer is the combination of a kind of or above-mentioned multiple material in titanium oxide, titanium dioxide, magnesium oxide, zinc oxide, silica, silicon dioxide, zirconium dioxide, iron oxide, cupric oxide, lead oxide, manganese oxide, tin oxide, tungsten oxide, and its thickness is 0.1-3um.
6. top-illuminating OLED device according to claim 1, is characterized in that, the material of described transparent electrode layer is one or several in ITO, IZO, ZnO, PEDOT-PSS, and its thickness is 0.1-3um.
7., according to the arbitrary described top-illuminating OLED device of claim 1-6, it is characterized in that, the material of described reflective metal layer is gold, silver, magnesium, aluminium, copper, platinum or its alloy.
8. a preparation method for top-illuminating OLED device, is characterized in that, described method comprises the steps:
Step one, provides underlay substrate, and makes reflective metal layer on underlay substrate;
Step 2, the surface of reflective metal layer makes scattering layer and transparent electrode layer successively;
Step 3, puts into evaporation chamber by the underlay substrate in step 2, and evaporation hole transmission layer, luminescent layer, electron transfer layer and the second electrode lay successively on transparent electrode layer, obtain top-illuminating OLED device.
9. preparation method according to claim 8, is characterized in that, the mode making scattering layer and transparent electrode layer on the surface of reflective metal layer successively in described step 2 is evaporation, sputtering or wet-layer preparation.
10. preparation method according to claim 8, is characterized in that, the second electrode lay in described step 3 is semi-transparent metals electrode layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410404886.6A CN105449107B (en) | 2014-08-15 | 2014-08-15 | A kind of top-illuminating OLED device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410404886.6A CN105449107B (en) | 2014-08-15 | 2014-08-15 | A kind of top-illuminating OLED device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105449107A true CN105449107A (en) | 2016-03-30 |
| CN105449107B CN105449107B (en) | 2018-08-10 |
Family
ID=55559078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410404886.6A Active CN105449107B (en) | 2014-08-15 | 2014-08-15 | A kind of top-illuminating OLED device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105449107B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449703A (en) * | 2016-10-09 | 2017-02-22 | Tcl集团股份有限公司 | OLED (Organic Light Emitting Diode) display panel and fabrication method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1961613A (en) * | 2004-03-26 | 2007-05-09 | 松下电工株式会社 | Organic light emitting element |
| US20070241998A1 (en) * | 2004-03-17 | 2007-10-18 | Koninklijke Philips Electronics, N.V. | Electroluminescent Display Devices |
| CN101807671A (en) * | 2009-02-17 | 2010-08-18 | 三星移动显示器株式会社 | Organic Light Emitting Diode and manufacture method thereof |
| CN103579520A (en) * | 2012-07-30 | 2014-02-12 | 昆山维信诺显示技术有限公司 | Organic light emitting diode display device |
| CN103682130A (en) * | 2012-08-31 | 2014-03-26 | 海洋王照明科技股份有限公司 | Top-emitting organic electroluminescent device and manufacture method thereof |
-
2014
- 2014-08-15 CN CN201410404886.6A patent/CN105449107B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070241998A1 (en) * | 2004-03-17 | 2007-10-18 | Koninklijke Philips Electronics, N.V. | Electroluminescent Display Devices |
| CN1961613A (en) * | 2004-03-26 | 2007-05-09 | 松下电工株式会社 | Organic light emitting element |
| CN101807671A (en) * | 2009-02-17 | 2010-08-18 | 三星移动显示器株式会社 | Organic Light Emitting Diode and manufacture method thereof |
| CN103579520A (en) * | 2012-07-30 | 2014-02-12 | 昆山维信诺显示技术有限公司 | Organic light emitting diode display device |
| CN103682130A (en) * | 2012-08-31 | 2014-03-26 | 海洋王照明科技股份有限公司 | Top-emitting organic electroluminescent device and manufacture method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449703A (en) * | 2016-10-09 | 2017-02-22 | Tcl集团股份有限公司 | OLED (Organic Light Emitting Diode) display panel and fabrication method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105449107B (en) | 2018-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI253878B (en) | Organic electroluminescent element and display device including the same | |
| CN103137881B (en) | Organnic electroluminescent device and preparation method thereof | |
| JP6350655B2 (en) | Photoelectric element substrate and photoelectric element including the same | |
| CN105552185A (en) | Full-inorganic quantum dot light emitting diode based on inorganic perovskite material and preparation method of full-inorganic quantum dot light emitting diode | |
| CN106159057B (en) | LED chip and preparation method thereof | |
| US9123904B2 (en) | Light emitting device and method of manufacturing the light emitting device | |
| JP2013225447A (en) | Electrode foil and electronic device | |
| CN103346269B (en) | A kind of semitransparent electrode and there is the organic electroluminescence device of this semitransparent electrode | |
| CN104701460B (en) | A kind of reflecting electrode and its preparation method and application | |
| CN110611041A (en) | Display panel and display device thereof | |
| CN112151648B (en) | Quantum dot light-emitting diode and preparation method thereof | |
| CN103050635A (en) | Top emission OLED (Organic Light-Emitting Diode) and preparation method thereof | |
| CN103137882A (en) | Organic electroluminescent device and production method thereof | |
| CN105449107A (en) | Top-emitting OLED device and preparation method thereof | |
| US10818869B2 (en) | Top-emitting type organic electroluminescent device, manufacturing method thereof and display apparatus | |
| CN104471738A (en) | Transparent supporting electrode for OLED | |
| TW201508965A (en) | Organic semiconductor device | |
| CN104218160A (en) | Organic electroluminescence device and preparation method thereof | |
| CN106159044B (en) | LED chip structure and preparation method thereof | |
| CN104681130A (en) | Conducting film, preparation method of conducting film and application | |
| TWI384901B (en) | Organic electroluminescent element | |
| CN104009179A (en) | Organic electroluminescent device and preparation method | |
| CN103000815A (en) | Multifunctional transparent electrode structure of ultraviolet organic light-emitting device | |
| CN104217787A (en) | Conductive diaphragm, preparation method and application thereof | |
| CN104175642A (en) | Electroconductive film and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |