CN105448887A - High-voltage MiM capacitor - Google Patents
High-voltage MiM capacitor Download PDFInfo
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- CN105448887A CN105448887A CN201410431337.8A CN201410431337A CN105448887A CN 105448887 A CN105448887 A CN 105448887A CN 201410431337 A CN201410431337 A CN 201410431337A CN 105448887 A CN105448887 A CN 105448887A
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- mim capacitor
- polar plate
- metal polar
- high voltage
- voltage mim
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Abstract
The invention provides a high-voltage MiM capacitor comprising a first metal pole plate which is disposed at the bottom of the high-voltage MiM capacitor and used as first lower pole plate, a second metal pole plate which is disposed on the top of the high-voltage MiM capacitor and used as a second lower pole plate, a third metal pole plate which is disposed between the first and second metal pole plates and used as an upper pole plate of the high-voltage MiM capacitor, and a dielectric layer which fills the gap between the first metal pole plate and the third metal pole plate and the gap between the second metal pole plate and the third metal pole plate. The MiM capacitor structure can support high-voltage applications and enhance the density of the MiM capacitor.
Description
Technical field
The present invention relates to semiconductor device and manufacture field, particularly relate to a kind of high voltage and high density MiM capacitor of novel structure.
Background technology
In semiconductor fabrication, metal-insulator-metal type (MiM, Metal-Insulator-Metal) electric capacity is produced on interconnection layer by capacitance technology, i.e. postchannel process (BEOL, BackEndOfLine) in, both mutually compatible with integrated circuit technology, again by zooming out the distance between passive device and conductive substrates, overcome that parasitic capacitance is large, device performance increases with frequency and obvious lower degradation problem, make this technology become the main flow making passive capacitor part in RF integrated circuit gradually.In addition, MiM electric capacity can also reduce the degree of difficulty and complexity technology integrated with CMOS front-end process.Therefore, MiM capacitance technology is developed just fast.
Such as, Fig. 1 shows the basic structure of a kind of MiM capacitor of prior art, and as shown in Figure 1, this MiM capacitor 100 mainly comprises: the metal top crown 101 arranged from top to bottom successively, insulator layer 102 and metal bottom crown 103.In such a configuration, the varied in thickness of insulator layer 102 can adjust capacitance and the puncture voltage of MiM capacitor 100.
Above-mentioned traditional MiM (metal-insulator-metal type) capacitor can meet low-voltage (<10V) digit chip needs.But for the application of high voltage (HV, HighVoltage) >10V, traditional MiM capacitor just shows the lower problem of puncture voltage.Although the thickness increasing the dielectric layer of MiM capacitor is simply a solution strengthening MiM puncture voltage, does like this and the capacitance density of this MiM capacitor can be made to reduce, reach identical capacitance needs to take larger area.
Summary of the invention
In order to balance the relation between MiM puncture voltage/capacitance/process complexity better, the present inventor proposes a kind of MiM capacitor arrangement of novelty, and this MiM capacitor arrangement can support that high voltage applications strengthens MiM capacitor density simultaneously.
Particularly, the present invention proposes a kind of high voltage MiM capacitor, comprising:
First metal polar plate, is placed in the bottom of described high voltage MiM capacitor as its first bottom crown;
Second metal polar plate, is placed in the top of described high voltage MiM capacitor as its second bottom crown;
3rd metal polar plate, is arranged between described first and second metal polar plates, as the top crown of described high voltage MiM capacitor; And
Dielectric layer, is filled between described first metal polar plate and described 3rd metal polar plate and between described second metal polar plate and described 3rd metal polar plate.
Preferably, in above-mentioned high voltage MiM capacitor, described first metal polar plate and described second metal polar plate are electrically connected via first passage.
Preferably, in above-mentioned high voltage MiM capacitor, also comprise: be electrically connected head, be arranged at the top of described high voltage MiM capacitor, described electric connection head is electrically connected described 3rd metal polar plate via second channel.
Preferably, in above-mentioned high voltage MiM capacitor, described electric connection head is coated on the same plane of described high voltage MiM capacitor with identical technique and material with described second metal polar plate.
Preferably, in above-mentioned high voltage MiM capacitor, described dielectric layer is made up of inter-level dielectric isolated material.
Preferably, in above-mentioned high voltage MiM capacitor, the thickness of described inter-level dielectric isolated material is between 2000 dust to 20000 dusts.
Preferably, in above-mentioned high voltage MiM capacitor, the thickness of described 3rd metal polar plate is between 200 dust to 3000 dusts.
Preferably, in above-mentioned high voltage MiM capacitor, the operating voltage of described high voltage MiM capacitor is between 0 volt to 1200 volts.
Preferably, in above-mentioned high voltage MiM capacitor, the thickness of the dielectric layer between described first metal polar plate and described 3rd metal polar plate is different from the dielectric layer thickness between described second metal polar plate and described 3rd metal polar plate.
High voltage MiM capacitor of the present invention is particularly suitable for Cu postchannel process (BEOL, BackEndOfLine) and Al postchannel process.
Should be appreciated that more than the present invention generality describe and the following detailed description be all exemplary and explanat, and be intended to for as claimed in claim the invention provides further explanation.
Accompanying drawing explanation
Comprising accompanying drawing is further understand the present invention for providing, and they are included and form a application's part, and accompanying drawing shows embodiments of the invention, and plays the effect explaining the principle of the invention together with this specification.In accompanying drawing:
Fig. 1 shows the basic structure of a kind of MiM capacitor of prior art.
Fig. 2 shows a preferred embodiment of the structure according to MiM capacitor of the present invention.
Fig. 3 shows another preferred embodiment of the structure according to MiM capacitor of the present invention.
Fig. 4 shows the another preferred embodiment of the structure according to MiM capacitor of the present invention.
Embodiment
With detailed reference to accompanying drawing, embodiments of the invention are described now.Now with detailed reference to the preferred embodiments of the present invention, its example is shown in the drawings.In the case of any possible, in all of the figs the identical mark of use is represented same or analogous part.In addition, although the term used in the present invention selects from public term, but some terms mentioned in specification of the present invention may be that applicant selects by his or her judgement, its detailed meanings illustrates in the relevant portion of description herein.In addition, require not only to pass through used actual terms, but the meaning that also will be contained by each term understands the present invention.
First embodiment described in reference diagram 2 illustrates design of the present invention, wherein figure 2 show a preferred embodiment of the structure according to MiM capacitor of the present invention.
As shown in the figure, high voltage MiM capacitor 200 of the present invention mainly comprises: the first metal polar plate 201, second metal polar plate 202, the 3rd metal polar plate 203 and dielectric layer 204.First metal polar plate 201 is placed in the bottom of high voltage MiM capacitor 200 as its first bottom crown.Second metal polar plate 202 is placed in the top of high voltage MiM capacitor 200 as its second bottom crown.Such as, in a preferred embodiment of figure 2, this second metal polar plate 202 is arranged on the top surface of MiM capacitor 200, like this by following the first passage 205 discussed in more detail is electrically connected this first metal polar plate 201 and the second metal polar plate 202 after, this second metal polar plate 202 can be used as the electric connection head of bottom crown.
Particularly, one the 3rd metal polar plate 203 is arranged between the first above-mentioned metal polar plate 201 and the second metal polar plate 202 by the present invention, as the top crown of high voltage MiM capacitor 200.According to a preferred embodiment, the thickness of the 3rd metal polar plate 203 can between 200 dust to 3000 dusts.
In addition, dielectric layer 204 is filled between the first metal polar plate 201 and the 3rd metal polar plate 203 and between the second metal polar plate 202 and the 3rd metal polar plate 203.Preferably, dielectric layer 204 is made up of inter-level dielectric isolated material (ILD, InterlayerDielectric), such as oxide, nitride and composition thereof, or other insulating material.
Like this, just be equivalent to define two MiM capacitance structures in MiM capacitor 202 of the present invention, the second capacitance structure that the first capacitance structure namely formed in the first metal polar plate 201 (bottom crown) and the 3rd metal polar plate 203 (top crown) and the second metal polar plate 202 (bottom crown) and the 3rd metal polar plate 203 (top crown) are formed.
In addition, according to the present invention, the first metal polar plate 201 and the second metal polar plate 202 can be electrically connected via first passage 205.
As shown in Figure 2, above-mentioned high voltage MiM capacitor 200 can also comprise an electric connection 206, is arranged at the top of high voltage MiM capacitor 200.This electric connection 206 is electrically connected the 3rd metal polar plate 203 via second channel 207.
Particularly, in the preferred embodiment shown in figure 2, this electric connection 206 is coated on the same plane of high voltage MiM capacitor 200 with the second metal polar plate 202 with identical technique and material, such as on the top.Can once be formed this electric connection 206 and the second metal polar plate 202 with simpler technique like this, thus be realized lower manufacturing cost.But the present invention is not limited to this.
Such as, forward Fig. 3 to, Fig. 3 shows another preferred embodiment of the present invention, and components and parts identical are in the embodiments of figure 3 with represented by identical tail number.Be electrically connected 306 material that same second metal polar plate 302 can be selected different, and utilize different technique to be formed.And as shown in the figure, the lower surface of electric connection in Fig. 3 306 also can be in different planes with the second metal polar plate 302.
In the present invention, the thickness of dielectric layer 204 can be selected according to the requirement of puncture voltage or capacitance.
Such as, with reference to figure 2 and Fig. 4, assuming that the thickness of dielectric layer 204 or 404 between the first metal polar plate 201 or 401 (bottom crown) and the 3rd metal polar plate 203 or 403 (top crown) is D1, suppose that the thickness of the dielectric layer 204 or 404 between the second metal polar plate 202 or 402 (bottom crown) and the 3rd metal polar plate 203 or 403 (top crown) is D2 simultaneously.
Under the prerequisite that the gross thickness as D1+D2 sum is constant, if time thickness D1 not identical with thickness D2 (embodiment such as shown in Fig. 4), then to compare the identical situation (embodiment such as shown in Fig. 2) of the thickness of D1 with D2 larger for the total capacitance of this MiM capacitor 200, but puncture voltage is compared lower.In addition, when the gross thickness of D1+D2 increases, puncture voltage relatively becomes large and total capacitance diminishes relatively.Like this, just can need design or regulate above-mentioned thickness D1 and D2 according to the parameter of reality.
The thickness of this dielectric layer 204, the i.e. thickness of inter-level dielectric isolated material, preferably between 2000 dust to 20000 dusts.Such as, as an example, if when the thickness (D1+D2) of the dielectric layer 204 between the first metal polar plate 201 and the second metal polar plate 202 is 5000 dust, the capacitance density of this MiM capacitor is about 0.2*2=0.4Ff/ μm
2.
Practice shows, adopts the operating voltage of the MiM capacitor of structure of the present invention between about 0 volt to about 1200 volts, more preferably between about 10 volts to about 80 volts, (can namely obtain the puncture voltage being greater than 80 volts).Only meet compared to prior art the MiM capacitor that low-voltage (<10V) applies, MiM capacitor of the present invention is suitable for applying widely.In addition, structure of the present invention can also balance MiM puncture voltage, relation between capacitance and process complexity well, realizes the solution of cost and combination property optimum.
Those skilled in the art can be obvious, can carry out various modifications and variations and without departing from the spirit and scope of the present invention to above-mentioned exemplary embodiment of the present invention.Therefore, be intended to that the present invention is covered and drop within the scope of appended claims and equivalent arrangements thereof to amendment of the present invention and modification.
Claims (9)
1. a high voltage MiM capacitor, is characterized in that, comprising:
First metal polar plate, is placed in the bottom of described high voltage MiM capacitor as its first bottom crown;
Second metal polar plate, is placed in the top of described high voltage MiM capacitor as its second bottom crown;
3rd metal polar plate, is arranged between described first and second metal polar plates, as the top crown of described high voltage MiM capacitor; And
Dielectric layer, is filled between described first metal polar plate and described 3rd metal polar plate and between described second metal polar plate and described 3rd metal polar plate.
2. high voltage MiM capacitor as claimed in claim 1, it is characterized in that, described first metal polar plate and described second metal polar plate are electrically connected via first passage.
3. high voltage MiM capacitor as claimed in claim 2, is characterized in that, also comprise:
Be electrically connected head, be arranged at the top of described high voltage MiM capacitor, described electric connection head is electrically connected described 3rd metal polar plate via second channel.
4. high voltage MiM capacitor as claimed in claim 3, it is characterized in that, described electric connection head is coated on the same plane of described high voltage MiM capacitor with identical technique and material with described second metal polar plate.
5. high voltage MiM capacitor as claimed in claim 1, it is characterized in that, described dielectric layer is made up of inter-level dielectric isolated material.
6. high voltage MiM capacitor as claimed in claim 5, it is characterized in that, the thickness of described inter-level dielectric isolated material is between 2000 dust to 20000 dusts.
7. high voltage MiM capacitor as claimed in claim 1, it is characterized in that, the thickness of described 3rd metal polar plate is between 200 dust to 3000 dusts.
8. high voltage MiM capacitor as claimed in claim 1, it is characterized in that, the operating voltage of described high voltage MiM capacitor is between 0 volt to 1200 volts.
9. high voltage MiM capacitor as claimed in claim 1, it is characterized in that, the thickness of the dielectric layer between described first metal polar plate and described 3rd metal polar plate is different from the dielectric layer thickness between described second metal polar plate and described 3rd metal polar plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410431337.8A CN105448887A (en) | 2014-08-28 | 2014-08-28 | High-voltage MiM capacitor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410431337.8A CN105448887A (en) | 2014-08-28 | 2014-08-28 | High-voltage MiM capacitor |
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| Publication Number | Publication Date |
|---|---|
| CN105448887A true CN105448887A (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410431337.8A Pending CN105448887A (en) | 2014-08-28 | 2014-08-28 | High-voltage MiM capacitor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449606A (en) * | 2016-10-12 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | MIM capacitor structure and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070057343A1 (en) * | 2005-09-12 | 2007-03-15 | International Business Machines Corporation | Integration of a mim capacitor over a metal gate or silicide with high-k dielectric materials |
| US7312118B2 (en) * | 2002-11-27 | 2007-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| CN105448895A (en) * | 2014-07-25 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | High-voltage MiP capacitor and manufacturing method thereof |
-
2014
- 2014-08-28 CN CN201410431337.8A patent/CN105448887A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7312118B2 (en) * | 2002-11-27 | 2007-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| US20070057343A1 (en) * | 2005-09-12 | 2007-03-15 | International Business Machines Corporation | Integration of a mim capacitor over a metal gate or silicide with high-k dielectric materials |
| CN105448895A (en) * | 2014-07-25 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | High-voltage MiP capacitor and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449606A (en) * | 2016-10-12 | 2017-02-22 | 上海华虹宏力半导体制造有限公司 | MIM capacitor structure and manufacturing method therefor |
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