CN105448884B - Dielectric layer structure, preparation method and semiconductor devices - Google Patents
Dielectric layer structure, preparation method and semiconductor devices Download PDFInfo
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- CN105448884B CN105448884B CN201410298533.2A CN201410298533A CN105448884B CN 105448884 B CN105448884 B CN 105448884B CN 201410298533 A CN201410298533 A CN 201410298533A CN 105448884 B CN105448884 B CN 105448884B
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Abstract
This application discloses a kind of dielectric layer structure, preparation method and semiconductor devices.Above-mentioned dielectric layer structure includes porous low-k materials layer, and the porous low-k materials layer includes porous layer and is formed in the sealing of hole layer of porous layer upper surface.In above-mentioned dielectric layer structure, porous low-k materials layer is formd in the dielectric layer, and one layer of sealing of hole layer is provided on the surface of the porous layer in porous low-k materials layer.This layer of sealing of hole layer can play protective effect to the porous layer of lower section, be conducive to that the moisture content in environment is hindered to enter in the hole of porous material.So as to inhibit the phenomenon that dielectric layer dielectric constant caused by water suction increases, and then be conducive to maintain the lower coupled capacitor of semiconductor devices.
Description
Technical field
This application involves field of semiconductor manufacture, lead in particular to a kind of dielectric layer structure, preparation method and partly
Body device.
Background technology
With the continuous renewal and improvement of semiconductor fabrication process, semiconductor devices is also gradually to small size, intensive hair
Exhibition.The performance requirement of each element in device is just continuously improved in becoming smaller for size.For example, for the semiconductor devices of small size
For, how to prevent the coupled capacitor between metal interconnection structure from becoming particularly important.Coupled capacitor be typically interconnection structure it
Between distance and between interconnection structure the dielectric constant (K) of material function.In order to reduce coupled capacitor, generally use is low
Dielectric constant (K<4) material is as between interconnection structure and the dielectric material of each interlayer.Since the dielectric constant of air is smaller
(K=1), in order to further decrease dielectric constant of the dielectric material, porosity is usually introduced into dielectric material, is formed it into more
Hole low-K dielectric material.
However, due to the characteristic of porous material water suction, during dry etching, wet etching and planarization process,
So that above-mentioned porous low-K dielectric material is easy to absorb the moisture content in air or in surrounding processing environment.These moisture content enter porous
The Kong Zhonghou of material can cause the dielectric constant of material to increase, to which the coupled capacitor of semiconductor devices can be caused to increase,
And then the electrical property of device can be reduced.
On this basis, the water absorption issue of porous low-K dielectric material how is solved into the weight paid close attention in semicon industry
Point.
Invention content
The application is intended to provide a kind of dielectric layer structure, preparation method and semiconductor devices, to solve in the prior art
Porous low-K dielectric material is there are hygroscopic, the problem of raising so as to cause dielectric layer dielectric constant.
To achieve the goals above, according to the one side of the application, a kind of dielectric layer structure is provided comprising porous
Low-K material layer, porous low-k materials layer include porous layer and are formed in the sealing of hole layer of porous layer upper surface.
Further, above-mentioned porous low-k materials layer includes the more porous layers being stacked, and is replaced with each porous layer
The two or more layers sealing of hole layer of setting.
Further, above-mentioned sealing of hole layer is formed by the upper surface of corona treatment porous layer.
Further, the material of above-mentioned porous layer is that carbon doped silicon dioxide, silicone glass or rotary carbon adulterate glass
Glass.
Further, the overall thickness of above-mentioned porous layer isCorresponding to each layer of sealing of hole layer of each layer porous layer
Thickness is
According to the another aspect of the application, a kind of semiconductor devices, including dielectric layer structure are provided, wherein dielectric layer
Structure is above-mentioned dielectric layer structure.
According to the another aspect of the application, a kind of preparation method of dielectric layer structure is additionally provided comprising：In offer
Porous layer is formed on substrate；Using plasma handles the upper surface of porous layer, sealing of hole layer is formed, to form porous low-K material
The bed of material.
Further, another porous layer is formed in the upper surface of sealing of hole layer after the step of forming sealing of hole layer, using etc.
Gas ions handle the upper surface of another porous layer, form another sealing of hole layer, to form porous low-k materials layer；Alternatively, weight
The step of complex is at porous layer and sealing of hole layer forms the more porous layers being superposed and multilayer sealing of hole layer, more to be formed
Hole low-K material layer.
Further, the step of formation porous layer includes：Low-K material is deposited on substrate, forms low-K material layer；Using
Ultraviolet light low-K material layer forms porous layer.
Further, the mode of above-mentioned corona treatment is that helium gas plasma is handled or hydrogen gas plasma is handled.
Further, in the step of above-mentioned corona treatment, the flow of plasma gas is 100~3000sccm, pressure
Power is 0.1~10Torr, and the power of processing is 100~500W.
Using dielectric layer structure, preparation method and the semiconductor devices of the application, porous low-K is formd in the dielectric layer
Material layer, and one layer of sealing of hole layer is provided on the surface of the porous layer in porous low-k materials layer.This layer of sealing of hole layer can be under
The porous layer of side plays protective effect, is conducive to that the moisture content in environment is hindered to enter in the hole of porous material.So as to press down
The phenomenon that dielectric layer processed dielectric constant caused by water suction increases, and then be conducive to maintain the lower coupling electricity of semiconductor devices
Hold.
Description of the drawings
The accompanying drawings which form a part of this application are used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation do not constitute the improper restriction to the application for explaining the application.In the accompanying drawings：
Fig. 1 shows a kind of technological process of preparation method according to the application embodiment dielectric layer structure of the application
Schematic diagram；
Fig. 2 to Fig. 5 shows a kind of each step institute shape of the preparation method according to the application embodiment dielectric layer structure
At matrix diagrammatic cross-section；Wherein,
Fig. 2 shows the diagrammatic cross-sections of the substrate provided；
Fig. 3 shows the diagrammatic cross-section that the matrix after porous layer is formed on substrate shown in Fig. 2；
Fig. 4 shows that the upper surface of porous layer shown in Fig. 3 forms the diagrammatic cross-section of the matrix after sealing of hole layer；
Fig. 5, which is shown, forms more porous layers on substrate shown in Fig. 2, and is formed on each layer of porous layer upper surface
Sealing of hole layer, and then form the diagrammatic cross-section of the matrix after porous low-k materials layer；
Fig. 5-1 shows on substrate shown in Fig. 2 formation low-K material layer, and after forming porous layer on low-K material layer
Matrix diagrammatic cross-section；
Fig. 5-2 shows the section signal that the matrix after sealing of hole layer is formed on the upper surface of the porous layer shown in Fig. 5-1
Figure；
Fig. 5-3, which is shown, forms another porous layer on the sealing of hole layer upper surface shown in Fig. 5-2, and porous at another
The diagrammatic cross-section of the matrix after another sealing of hole layer is formed on the upper surface of layer；
When Fig. 6 shows the exposure of the dielectric layer in Examples 1 and 2, comparative example 1 in air, the dielectric constant of dielectric layer
With the variation diagram of exposure duration.
Specific implementation mode
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe specific implementation mode, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
Be also intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or combination thereof.
For ease of description, herein can with use space relative terms, as " ... on ", " in ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, if the device in attached drawing is squeezed, it is described as " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also other different modes positioning (be rotated by 90 ° or be in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As background technology part is introduced, existing porous low-K dielectric material is there are hygroscopic, so as to cause medium
The big problem of the raising of layer dielectric constant, semiconductor devices coupled capacitor.In order to solve this problem, the application applicant provides
A kind of dielectric layer.The dielectric layer includes porous low-k materials layer, and porous low-k materials layer includes porous layer and is formed in porous layer table
Sealing of hole layer on face.The porous low-k materials layer that the above-mentioned dielectric layer of the application is included, by being formed on the surface of porous layer
One layer of sealing of hole layer plays protective effect with the porous layer to lower section, is conducive to hinder in air or later stage dry method is carved
Moisture content when erosion, wet etching or planarization process in environment enters in the hole of porous material.So as to inhibit dielectric layer because
The phenomenon that dielectric constant caused by water suction increases, and then be conducive to maintain the lower coupled capacitor of semiconductor devices.
In the above-mentioned dielectric layer structure of the application, as long as adding one on the upper surface of porous layer in porous low-k materials layer
Layer sealing of hole layer, just can inhibit the water imbibition of porous layer to a certain extent.In a preferred embodiment, above-mentioned porous
Low-K material layer includes the two or more layers porous layer being stacked, and the two or more layers being arranged alternately with each porous layer are sealed
Aperture layer.For one layer of sealing of hole layer only is set above whole porous layer, porous low-k materials layer is divided into two layers or more
Layer porous layer, and one layer of sealing of hole layer is respectively provided on the porous upper surface layer by layer of each layer, it can be further more to each layer
Aperture layer carries out anti-water suction protection.Such multiple protective is conducive to further suppress the water imbibition of porous low-k materials layer, make include
Its dielectric layer has higher dielectric constant stability, and then lower coupling electricity can be kept within the longer time
Hold, to improve the performance of semiconductor devices.Above-mentioned multilayer refer to three layers or be more than three layers.
It, can be one as long as the sealing of hole layer of formation has higher compactness in the above-mentioned dielectric layer structure of the application
Determine the water imbibition of porous layer below inhibiting in degree.In a preferred embodiment, above-mentioned sealing of hole layer by plasma at
The upper surface of reason porous layer is formed.In the way of corona treatment, the compactness of porous layer upper surface can be increased.This layer
The film of compactness can be below inhibition while the water imbibition of porous layer, itself still has lower dielectric constant.
Under the requirement of same thickness of dielectric layers, this layer of compactness is higher, the lower film of dielectric constant can balance media layer it is whole
The low water absorbable and low-k of body.Make semiconductor devices that there is better performance.It is highly preferred that above-mentioned porous layer
Overall thickness isThickness corresponding to each layer sealing of hole layer of each layer porous layer is
In the above-mentioned dielectric layer structure of the application, the material of porous layer is formed using the usual material of those skilled in the art
Material.Wherein preferably include, but is not limited to carbon doped silicon dioxide, silicone glass or rotary carbon doped-glass.
In addition, present invention also provides a kind of semiconductor devices, the dielectric layer structure in the semiconductor devices uses this Shen
Above-mentioned dielectric layer structure please.Sealing of hole layer is added by the porous low-k materials layer upper surface in dielectric layer structure, can be reduced
The water absorbing properties of porous low-k materials layer.So as to improve the dielectric constant stability of dielectric layer structure, further increases and partly lead
The performance of body device.
In addition, present invention also provides a kind of preparation methods of dielectric layer structure, as shown in Figure 1, it includes the following steps：
Porous layer 210 is provided on the substrate 100 of offer；Using plasma handles the upper surface of porous layer 210, forms sealing of hole layer
211, and then form porous low-k materials layer 200.
The preparation method of dielectric layer structure provided herein, by using the upper of corona treatment porous layer 210
Surface forms the higher sealing of hole layer of one layer of compactness 211 on the upper surface of the porous layer 210.This layer of sealing of hole layer 211 is advantageous
In the water imbibition for inhibiting porous layer 210, so as to alleviate entire dielectric layer dielectric caused by the water suction of porous low-k materials layer
The problem of constant increases, and then improve the performance of semiconductor devices.
The illustrative embodiments according to the application are described in more detail below.However, these illustrative embodiments
It can be implemented by many different forms, and should not be construed to be limited solely to embodiments set forth herein.It should
These embodiments that are to provide understood are in order to enable disclosure herein is thoroughly and complete, and by these exemplary realities
The design for applying mode is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer and region
Thickness, and make that identical device is presented with like reference characters, thus description of them will be omitted.
Fig. 2 to Fig. 5 shows the preparation method according to the dielectric layer structure in the application one embodiment, through each step institute
The matrix diagrammatic cross-section of formation.Below in conjunction with Fig. 2 to Fig. 5, dielectric layer structure provided herein is further illustrated
Preparation method：
First, substrate 100 as shown in Figure 2 is provided, wherein dielectric layer to be produced can be pre-formed on substrate 100
Other structures, such as metal layer.As an example, in the present embodiment, dielectric layer is directly made on substrate 100.In addition, lining
Bottom 100 can be monocrystalline silicon, silicon-on-insulator (SOI) or germanium silicon (SiGe) etc..As an example, in the present embodiment, substrate 100
Single crystal silicon material is selected to constitute.
After substrate 100 is provided, porous layer 210 is formed on substrate 100, and then form basal body structure as shown in Figure 3.
The method for forming porous layer 210 uses those skilled in the art institute customary way.In a kind of preferred embodiment, shape
Include at the step of above-mentioned porous layer 210：Low-K material is deposited on substrate 100, forms low-K material layer；Using ultraviolet light
Or heat treatment low-K material layer, form porous layer 210.In the step of ultraviolet light or heat treatment low-K material layer, specifically
Operating procedure can be the usual technique of those skilled in the art.For example, temperature when ultraviolet light is 350~450 DEG C,
Power is 2000~4000W.
It completes after the step of forming porous layer 210 on substrate 100, using plasma handles porous layer 210
Upper surface forms sealing of hole layer 211, and then forms porous low-k materials layer 200, and then forms basal body structure as shown in Figure 4.It adopts
In the step of forming above-mentioned sealing of hole layer 211 with the method for corona treatment, helium gas plasma processing or hydrogen may be used
Corona treatment.Those skilled in the art can be according to specifically needing to select specific plasma-treating technology.For example,
The flow of plasma gas is 100~3000sccm, and pressure is 0.1~10Torr, and the power of processing is 100~500W.
In the preparation method of above-mentioned dielectric layer, as long as the porous low-k materials layer 200 of formation includes the envelope being located on upper surface
Aperture layer 211 can inhibit the water absorbing properties of porous layer 210 to a certain extent, and dielectric layer is made to have lower dielectric constant.One
In kind more preferably embodiment,
Formed porous low-k materials layer 200 the step of include：S1, porous layer 210 is formed on substrate 100, and then formed such as
Basal body structure shown in Fig. 5-1.Similarly, the method for forming porous layer 210 uses those skilled in the art institute customary way
.Preferably, the step of formation porous layer 210 include：Low-K material is deposited on substrate 100, forms low-K material layer；Using
Ultraviolet light or heat treatment low-K material layer, form porous layer 210.S2, formed porous layer 210 the step of after, using etc. from
Daughter handles the upper surface of porous layer 210, forms sealing of hole layer 211, and then form the basal body structure as shown in Fig. 5-2.Similarly,
The concrete mode of plasma treatment can be helium gas plasma processing or hydrogen gas plasma processing.And specific treatment process
It can be adjusted, for example, the flow of plasma gas is 100~3000sccm, pressure is 0.1~10Torr, the work(of processing
Rate is 100~500W.S3, another porous layer 210 is formed in the upper surface of sealing of hole layer 211, using plasma processing is another
The upper surface of a porous layer 210 forms another sealing of hole layer 211, forms porous low-k materials layer 200, and then form such as Fig. 5-3
Shown in basal body structure.Alternatively, repeating step S3, form the more porous layers 210 being superposed, and with each porous layer 210
The multilayer sealing of hole layer 211 being arranged alternately, and then porous low-k materials layer 200 is formed, and then form basal body structure as shown in Figure 5.
In the preparation method of above-mentioned dielectric layer, compared to the porous layer 210 for forming one layer of entirety on substrate 100, then
For only forming the scheme of one layer of sealing of hole layer 211 on 210 surface of porous layer, in substrate by way of multiple circulate operation
More porous layers 210 are formed on 100, and sealing of hole layer 211 is respectively formed in each layer of porous layer 210, it can be to each layer of porous layer
210 carry out anti-water suction protection.Meanwhile it irradiating the low-K material layer relatively thin to every a layer thickness using ultraviolet light and carrying out porous processing
When, the dispersibility for being formed by hole is comparatively uniform, and aperture is relatively small.Smaller aperture is conducive to further suppress porous
The water imbibition of layer 210 improves the usability of semiconductor devices to further promote dielectric layer to keep lower dielectric constant
Energy.
The application is described in further detail below in conjunction with specific embodiment, these embodiments should not be understood as limitation originally
Apply for range claimed.
Embodiment 1
A kind of preparation method of dielectric layer is present embodiments provided, is included the following steps：
One layer of carbon is deposited on a monocrystaline silicon substrate and adulterates thermal oxidation silicon, and forming thickness isLow-K material layer；
Using the above-mentioned low-K material layer of ultraviolet light, wherein irradiation temperature is 400 DEG C, power 4000W, irradiation time
For 10min, porous layer is formed；
The upper surface of above-mentioned porous layer is handled using helium gas plasma, wherein the flow of plasma gas is
3000sccm, pressure 0.1Torr, power 500W are formed on surface and are with thicknessSealing of hole layer porous low-k materials
Layer, and then obtain required dielectric layer.
Embodiment 2
A kind of preparation method of dielectric layer is present embodiments provided, is included the following steps：
One layer of carbon is deposited on a monocrystaline silicon substrate and adulterates thermal oxidation silicon, and forming thickness isLow-K material layer；
Using the above-mentioned low-K material layer of ultraviolet light, wherein irradiation temperature is 350 DEG C, power 2000W, irradiation time
For 8min, first layer porous layer is formed；
The upper surface of above-mentioned first layer porous layer is handled using helium gas plasma, wherein the flow of plasma gas is
100sccm, pressure 10Torr, power 100W are formed on surface and are with thicknessSealing of hole layer the first layer of material；
Formed on the upper surface of above-mentioned first layer porous low-k materials layer same second and third ..., ten layer materials
Layer, forming overall thickness isPorous low-k materials layer, and then obtain required dielectric layer.
Comparative example 1
This comparative example provides a kind of preparation method of dielectric layer, includes the following steps：
One layer of carbon is deposited on a monocrystaline silicon substrate and adulterates thermal oxidation silicon, and forming thickness isLow-K material layer；
Using the above-mentioned low-K material layer of ultraviolet light, wherein irradiation temperature is 400 DEG C, power 4000W, irradiation time
For 30min, porous low-k materials layer is formed；And then obtain required dielectric layer.
Dielectric layer obtained in above-described embodiment and comparative example is measured, to characterize the stability of its dielectric constant.
Measurement method：In air by dielectric layer exposure, the dielectric constant of dielectric layer under different time is measured, it is specific to measure
The results are shown in Figure 6：
Fig. 6 center lines 1 indicate that the dielectric constant of 1 dielectric layer of embodiment changes with time；Line 2 indicates 2 intermediary of embodiment
The dielectric constant of matter layer changes with time；Line 3 indicates that the dielectric constant of 1 dielectric layer of comparative example changes with time；
From above data and description, it can be seen that the application the above embodiments realize following technique effect：
Sealing of hole layer is set on the surface of porous low-k materials layer, can effectively inhibit dielectric layer dielectric constant caused by water suction raised
Problem.Particularly, using the porous layer of multiple-layer stacked, and the sealing of hole layer being arranged on the surface of every layer of porous layer, it can be into one
Step improves the stability of dielectric layer dielectric constant.To make dielectric layer keep lower dielectric constant in a long time, half is improved
The performance of conductor device.
The foregoing is merely the preferred embodiments of the application, are not intended to limit this application, for the skill of this field
For art personnel, the application can have various modifications and variations.Within the spirit and principles of this application, any made by repair
Change, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (8)
1. a kind of dielectric layer structure, which is characterized in that including porous low-k materials layer, the porous low-k materials layer includes porous layer
With the sealing of hole layer for being formed in the porous layer upper surface, wherein the porous low-k materials layer includes two layers be stacked or more
The layer porous layer, and sealing of hole layer described in the two or more layers that are arranged alternately with each porous layer；Wherein, the porous layer
Overall thickness beThickness corresponding to each layer sealing of hole layer of each porous layer is
2. dielectric layer structure according to claim 1, which is characterized in that the sealing of hole layer is by corona treatment in it
The upper surface of the corresponding porous layer is formed.
3. dielectric layer structure according to claim 2, which is characterized in that the material of the porous layer is that carbon adulterates titanium dioxide
Silicon, silicone glass or rotary carbon doped-glass.
4. a kind of semiconductor devices, including dielectric layer structure, which is characterized in that the dielectric layer structure is in claims 1 to 3
Any one of them dielectric layer structure.
5. a kind of preparation method of dielectric layer structure, which is characterized in that including：
Porous layer (210) is formed on the substrate (100) of offer；
The upper surface of the using plasma processing porous layer (210), forms sealing of hole layer (211), to form porous low-K material
The bed of material (200)；
After the step of forming sealing of hole layer (211),
Another porous layer (210) is formed in the upper surface of the sealing of hole layer (211), using plasma processing is described another
The upper surface of one porous layer (210) forms another sealing of hole layer (211), to form the porous low-k materials layer
(200)；Alternatively,
The step of being repeatedly formed the porous layer (210) and the sealing of hole layer (211), forms porous described in the multilayer being stacked
Sealing of hole layer (211) described in layer (210) and multilayer, to form the porous low-k materials layer (200)
Wherein, the overall thickness of the porous layer isCorresponding to the thickness of each layer sealing of hole layer of each porous layer
Degree is
6. preparation method according to claim 5, which is characterized in that the step of forming the porous layer (210) include：
Low-K material is deposited on the substrate (100), forms low-K material layer；
Using low-K material layer described in ultraviolet light, the porous layer (210) is formed.
7. preparation method according to claim 5, which is characterized in that the mode of the corona treatment be helium etc. from
Daughter processing or hydrogen gas plasma processing.
8. preparation method according to claim 7, which is characterized in that in the step of the corona treatment, plasma
The flow of gas is 100~3000sccm, and pressure is 0.1~10Torr, and the power of processing is 100~500W.
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| US7342315B2 (en) * | 2003-12-18 | 2008-03-11 | Texas Instruments Incorporated | Method to increase mechanical fracture robustness of porous low k dielectric materials |
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