CN105441873A - Multifunctional instrument panel or camera window and preparation method thereof - Google Patents

Multifunctional instrument panel or camera window and preparation method thereof Download PDF

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Publication number
CN105441873A
CN105441873A CN201511028319.6A CN201511028319A CN105441873A CN 105441873 A CN105441873 A CN 105441873A CN 201511028319 A CN201511028319 A CN 201511028319A CN 105441873 A CN105441873 A CN 105441873A
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China
Prior art keywords
rete
film material
evaporation
layer
vacuum plating
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CN201511028319.6A
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Chinese (zh)
Inventor
吴晓彤
方俊勇
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Ott Road (zhangzhou) Optical Technology Co Ltd
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Ott Road (zhangzhou) Optical Technology Co Ltd
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Priority to CN201511028319.6A priority Critical patent/CN105441873A/en
Publication of CN105441873A publication Critical patent/CN105441873A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • C23C28/3455—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation

Abstract

The invention discloses a multifunctional instrument panel or camera window. The multifunctional instrument panel or camera window comprises a substrate, wherein the outer surface of the substrate is sequentially provided with a first film layer, a second film layer, a third film layer, a fourth film layer, a fifth film layer, a sixth film layer, a seventh film layer and an eighth film layer from inside to outside; the first film layer and the third film layer are trititanium pentoxide layers with a thickness of 10-100nm; the second film layer and the fourth film layer are silicon dioxide layers with a thickness of 50-100nm; the fifth film layer is a nano silver layer with a thickness of 5-20nm; the sixth film layer is an ITO layer with a thickness of 10-100nm; the seventh film layer is a high-hardness layer with a thickness of 10-50nm; and the eighth film layer is a fluoride layer with a thickness of 3-10nm.

Description

A kind of multi-functional instrument dial plate or camera views and preparation method thereof
Technical field
The present invention relates to a kind of panel board or camera views technical field, especially relate to a kind of multi-functional instrument dial plate or camera views and preparation method thereof.
Background technology
Existing panel board or the rarer sterilizing function of camera views, the needs that people in use pass through to touch are easily from bacterial infection panel board or camera views, or bring panel board or camera views outside surface bacterium, cause cross infection to human body, affect user physically and mentally healthy.
The light transmission of existing panel board or camera views is bad, easily dazzling.Existing panel board or camera views do not have the function such as radioprotective, antiultraviolet yet.
In addition, when the hand of people touches panel board or camera views, greasy dirt on hand and water stain being easy to are left a trace on panel board or camera views, and these vestiges are not easy again to wipe out very much, the effect that user observes things will be affected like this, make troubles to user.After life-time service, panel board or camera views be easy breed bacteria not only, but also easily adsorbs the fine particles such as the dust in surrounding environment, thus is unfavorable for that user's is healthy.
In addition, existing panel board or camera views are in use easy to scratched or rub flower, affect attractive in appearance, and more seriously, after the surface of panel board or camera views scratches or rubs and spends, internal layer exposes in atmosphere, holds corrosion-vulnerable, affects work-ing life.Therefore on market in the urgent need to occurring that multi-functional panel board or camera views are to replace existing panel board or camera views.
Summary of the invention
In order to solve deficiency of the prior art, the object of the present invention is to provide a kind of multi-functional instrument dial plate or camera views and preparation method thereof of surface band multicoating layer.
For achieving the above object, the present invention is by the following technical solutions:
A kind of multi-functional instrument dial plate or camera views, comprise substrate, the outside surface of described substrate is sequentially provided with the first rete, the second rete, third membrane layer, the 4th rete, the 5th rete, the 6th rete, the 7th rete and the 8th rete from the inside to surface; Described first rete and third membrane layer are five oxidation three titanium layers, and thickness is 10-100nm; Described second rete and the 4th rete are silicon dioxide layer, and thickness is 50-100nm; Described 5th rete is nano-silver layer, and the thickness of the 5th rete is 5-20nm; Described 6th rete is ITO layer, and thickness is 10-100nm; Described 7th rete is high rigidity layer, and thickness is 10-50nm; Described 8th rete is fluoride layer, and thickness is 3-10nm.
The film material of five described oxidation three titanium layers is five oxidation Tritanium/Trititaniums, and shaping by electron beam gun evaporation, and the film material of silicon dioxide layer is silicon-dioxide, and shaping by electron beam gun evaporation.
The film material of described nano-silver layer is the oxide compound of silver, and uses electron beam gun evaporation shaping, and the oxide compound of described silver is Ag 2o, AgO or Ag 2o 3, the film material of described ITO layer is ITO, and shaping by electron beam gun evaporation.
The film material of described high rigidity layer is aluminium sesquioxide, zirconium white, silica crystals or silicon monoxide crystal, and shaping by electron beam gun evaporation.
The film material of described fluoride layer is magnesium fluoride, and shaping by resistive heating evaporation.
Described substrate is by resin or glass ware forming.
When described substrate is by resin forming, described preparation method specifically comprises the following steps:
1) substrate is cleaned, dry;
2) plated film is carried out to the outside surface of substrate;
A, plate the first rete:
Force value in vacuum plating cabin is adjusted to and is less than or equal to 5.0 × 10 -3handkerchief, and the temperature controlled in vacuum plating cabin is 50-70 DEG C, electron beam gun is adopted to bombard the film material of the first rete, be deposited on the outside surface of substrate with nanoscale molecular form after the film material evaporation of the first rete, the speed simultaneously controlling the first rete evaporation is 2.5/S, and the thickness after the first rete is finally formed is 10-100nm; Wherein, the film material of described first rete is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
B, plate the second rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, electron beam gun is adopted to bombard the film material of the second rete, be deposited on the surface of the first rete in above-mentioned steps A with nanoscale molecular form after the film material evaporation of the second rete, the speed simultaneously controlling the second rete evaporation is 7/S, and the thickness after the second rete is finally formed is 50-100nm; Wherein, the film material of described second rete is silicon-dioxide, forms silicon dioxide layer;
C, plating third membrane layer:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment third membrane layer, be deposited on the surface of the second rete in above-mentioned steps B with nanoscale molecular form after the film material evaporation of third membrane layer, the speed simultaneously controlling third membrane layer evaporation is 2.5/S, and the thickness after third membrane layer is finally formed is 10-100nm; Wherein, the film material of described third membrane layer is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
D, plating the 4th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 4th rete, be deposited on the surface of third membrane layer in above-mentioned steps C with nanoscale molecular form after the film material evaporation of the 4th rete, the speed simultaneously controlling the 4th rete evaporation is 7/S, and the thickness after the 4th rete is finally formed is 50-100nm; Wherein, the film material of described 4th rete is silicon-dioxide, forms silicon dioxide layer;
E, plating the 5th rete:
The force value in vacuum plating cabin is kept to be more than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the oxide compound of the film material silver of electron beam gun bombardment the 5th rete, decompose after the oxide compound evaporation of silver, with nanometer silver form in step D the 4th rete surface formed thin layer, the speed simultaneously controlling the 5th rete evaporation is 1/S, and the thickness after the 5th rete is finally formed is 5-20nm;
F, plating the 6th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 6th rete, be deposited on the surface of the 5th rete in above-mentioned steps E with nanoscale molecular form after the film material evaporation of the 6th rete, the speed simultaneously controlling the 6th rete evaporation is 1/S, and the thickness after the 6th rete is finally formed is 10-100nm; Wherein, the film material of described 6th rete is ITO, forms ITO layer.
G, plating the 7th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 7th rete, be deposited on the surface of the 6th rete in above-mentioned steps F with nanoscale molecular form after the film material evaporation of the 7th rete, the speed simultaneously controlling the 7th rete evaporation is 7/S, and the thickness after the 6th rete is finally formed is 10-50nm; Wherein, the film material of described 6th rete is aluminium sesquioxide, zirconium white, silicon-dioxide high rigidity crystal or silicon monoxide high rigidity crystal, forms high rigidity layer.
H, plating the 8th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of resistive heating the 8th rete, be deposited on the surface of the 7th rete in above-mentioned steps G with nanoscale molecular form after the film material evaporation of the 8th rete, the speed simultaneously controlling the 8th rete evaporation is 1.5/S, and the thickness after the 8th rete is finally formed is 3-10nm; Wherein, the film material of described 8th rete is magnesium fluoride, forms fluoride layer.
In described step 1), substrate is cleaned, dry concrete steps are as follows: substrate is placed in vacuum chamber, cleans with the outside surface 2-3 minute of ion gun bombardment substrate.
When described substrate is by glass ware forming, described preparation method specifically comprises the following steps:
1) substrate is cleaned, dry;
2) plated film is carried out to the outside surface of substrate;
A, plate the first rete:
Force value in vacuum plating cabin is adjusted to and is less than or equal to 5.0 × 10 -3handkerchief, and the temperature controlled in vacuum plating cabin is 200-300 DEG C, electron beam gun is adopted to bombard the film material of the first rete, be deposited on the outside surface of substrate with nanoscale molecular form after the film material evaporation of the first rete, the speed simultaneously controlling the first rete evaporation is 2.5/S, and the thickness after the first rete is finally formed is 10-100nm; Wherein, the film material of described first rete is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
B, plate the second rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, electron beam gun is adopted to bombard the film material of the second rete, be deposited on the surface of the first rete in above-mentioned steps A with nanoscale molecular form after the film material evaporation of the second rete, the speed simultaneously controlling the second rete evaporation is 7/S, and the thickness after the second rete is finally formed is 50-100nm; Wherein, the film material of described second rete is silicon-dioxide, forms silicon dioxide layer;
C, plating third membrane layer:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment third membrane layer, be deposited on the surface of the second rete in above-mentioned steps B with nanoscale molecular form after the film material evaporation of third membrane layer, the speed simultaneously controlling third membrane layer evaporation is 2.5/S, and the thickness after third membrane layer is finally formed is 10-100nm; Wherein, the film material of described third membrane layer is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
D, plating the 4th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 4th rete, be deposited on the surface of third membrane layer in above-mentioned steps C with nanoscale molecular form after the film material evaporation of the 4th rete, the speed simultaneously controlling the 4th rete evaporation is 7/S, and the thickness after the 4th rete is finally formed is 50-100nm; Wherein, the film material of described 4th rete is silicon-dioxide, forms silicon dioxide layer;
E, plating the 5th rete:
The force value in vacuum plating cabin is kept to be more than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the oxide compound of the film material silver of electron beam gun bombardment the 5th rete, decompose after the oxide compound evaporation of silver, with nanometer silver form in step D the 4th rete surface formed thin layer, the speed simultaneously controlling the 5th rete evaporation is 1/S, and the thickness after the 5th rete is finally formed is 5-20nm;
F, plating the 6th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 6th rete, be deposited on the surface of the 5th rete in above-mentioned steps E with nanoscale molecular form after the film material evaporation of the 6th rete, the speed simultaneously controlling the 6th rete evaporation is 1/S, and the thickness after the 6th rete is finally formed is 10-100nm; Wherein, the film material of described 6th rete is ITO, forms ITO layer.
G, plating the 7th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 7th rete, be deposited on the surface of the 6th rete in above-mentioned steps F with nanoscale molecular form after the film material evaporation of the 7th rete, the speed simultaneously controlling the 7th rete evaporation is 7/S, and the thickness after the 6th rete is finally formed is 10-50nm; Wherein, the film material of described 6th rete is aluminium sesquioxide, zirconium white, silicon-dioxide high rigidity crystal or silicon monoxide high rigidity crystal, forms high rigidity layer.
H, plating the 8th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of resistive heating the 8th rete, be deposited on the surface of the 7th rete in above-mentioned steps G with nanoscale molecular form after the film material evaporation of the 8th rete, the speed simultaneously controlling the 8th rete evaporation is 1.5/S, and the thickness after the 8th rete is finally formed is 3-10nm; Wherein, the film material of described 8th rete is magnesium fluoride, forms fluoride layer.
In described step 1), substrate is cleaned, dry concrete steps are as follows: substrate is placed in vacuum chamber, cleans with the outside surface 5-10 minute of ion gun bombardment substrate.
The present invention adopts the principle of electron beam vacuum evaporation, there is after utilizing charged particle to accelerate in the electric field the feature of certain kinetic energy, ion is guided into the electrode for being made by the substrate of plated film, and by electron gun with high temperature bombardment by high purity films material, the nano molecular be evaporated makes it move to substrate along certain direction and the final method in deposition on substrate film forming.The trajectory of electron motion that this invention combine with technique utilizes the special distribution in magnetic field to control in electric field, improves the technique of plated film with this, make coating film thickness and homogeneity controlled, and the rete compactness of preparation is good, strong adhesion.
The present invention's vacuum evaporation on substrate has five oxidation three titanium layers, take full advantage of five oxidation Tritanium/Trititanium crystalline material coating operations good, rete is intensive, evenly, stable, the performances such as stress is little, and five oxidation Tritanium/Trititanium crystalline material in visible light wave range, there is the highest specific refractory power, good crystallinity, evaporation is stablized, without advantages such as venting and splashes, it is made to be adapted at panel board or camera views substrate being coated with the good multilayer film of anti-reflection property.
The present invention's vacuum evaporation on substrate has silicon dioxide layer, mainly plays a part to increase film adhesion, wear resistance and shock resistance, can absorb harmful light simultaneously.
Five oxidation three titanium layers of the present invention and silicon dioxide layer cooperatively interact, and mainly play the effect that the anti-glazing of controlled filter wavelength is anti-reflection.The present invention is cooperatively interacted by above-mentioned rete, plays the effects such as absorption, reflection, conversion, filtration, is the wear-resisting core technology of panel board or camera views plated film sterilization anti-glazing; Meanwhile, by regulating the thickness of above-mentioned each rete, the visible ray making wavelength longer produces coherent interference, thus produces anti-glazing effect further; Arrange nano-silver layer, have strong suppression and killing action, and can not produce resistance to tens of kinds of pathogenic microorganisms such as intestinal bacteria, gonococcus, chlamydia trachomatises, the film material of nano-silver layer is the oxide compound of silver, as Ag 2o, AgO or Ag 2o 3, the oxide compound of silver is separated through electron beam gun evaporate process oxonium ion and obtains nanometer silver from the oxide compound of silver, and nanometer silver forms thin layer on the surface of the 4th tunic; In addition arranging ITO layer can effectively radioprotective and antiultraviolet; The wear resistance that high rigidity layer effectively can improve panel board or camera views is set, can prevents it from scratching; Arrange fluoride layer, fluorochemical has good waterproof and oil-stain-preventing function, and therefore product surface of the present invention realizes several functions effect by multicoating, reasonable in design, practical.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further details:
Fig. 1 is the decomposition texture schematic diagram of multi-functional instrument dial plate of the present invention or photographic camera.
Embodiment
As shown in Figure 1, a kind of multi-functional instrument dial plate or camera views, comprise substrate 1, the outside surface of described substrate 1 is sequentially provided with the first rete 2, second rete 3, third membrane layer 4, the 4th rete 5, the 5th rete 6, the 6th rete 7, the 7th rete 8 and the 8th rete 9 from the inside to surface; Described first rete 2 and tertiary membrane 4 layers are five oxidation three titanium layers, and thickness is 10-100nm; Described second rete 3 and the 4th rete 5 are silicon dioxide layer, and thickness is 50-100nm; Described 5th rete 6 is nano-silver layer, and the thickness of the 5th rete 6 is 5-20nm; Described 6th rete 7 is ITO layer, and thickness is 10-100nm; Described 7th rete 8 is high rigidity layer, and thickness is 10-50nm; Described 8th rete 9 is fluoride layer, and thickness is 3-10nm.
The film material of five described oxidation three titanium layers is five oxidation Tritanium/Trititaniums, and shaping by electron beam gun evaporation, and the film material of silicon dioxide layer is silicon-dioxide, and shaping by electron beam gun evaporation.
The film material of described nano-silver layer is the oxide compound of silver, and uses electron beam gun evaporation shaping, and the oxide compound of described silver is Ag 2o, AgO or Ag 2o 3, the film material of described ITO layer is ITO, and shaping by electron beam gun evaporation.
The film material of described high rigidity layer is aluminium sesquioxide, zirconium white, silica crystals or silicon monoxide crystal, and shaping by electron beam gun evaporation.
The film material of described fluoride layer is magnesium fluoride, and shaping by resistive heating evaporation.
Described substrate 1 is by resin or glass ware forming.
When described substrate 1 is by resin forming, described preparation method specifically comprises the following steps:
1) substrate 1 is cleaned, dry;
2) plated film is carried out to the outside surface of substrate 1;
A, plate the first rete 2:
Force value in vacuum plating cabin is adjusted to and is less than or equal to 5.0 × 10 -3handkerchief, and the temperature controlled in vacuum plating cabin is 50-70 DEG C, electron beam gun is adopted to bombard the film material of the first rete 2, be deposited on the outside surface of substrate 1 with nanoscale molecular form after the film material evaporation of the first rete, the speed simultaneously controlling the first rete evaporation is 2.5/S, and the thickness after the first rete is finally formed is 10-100nm; Wherein, the film material of described first rete is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
B, plate the second rete 3:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, electron beam gun is adopted to bombard the film material of the second rete 3, be deposited on the surface of the first rete 2 in above-mentioned steps A with nanoscale molecular form after the film material evaporation of the second rete, the speed simultaneously controlling the second rete evaporation is 7/S, and the thickness after the second rete is finally formed is 50-100nm; Wherein, the film material of described second rete is silicon-dioxide, forms silicon dioxide layer;
C, plating third membrane layer 4:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment third membrane layer 4, be deposited on the surface of the second rete 3 in above-mentioned steps B with nanoscale molecular form after the film material evaporation of third membrane layer, the speed simultaneously controlling third membrane layer evaporation is 2.5/S, and the thickness after third membrane layer is finally formed is 10-100nm; Wherein, the film material of described third membrane layer is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
D, plating the 4th rete 5:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 4th rete 5, be deposited on the surface of third membrane layer 4 in above-mentioned steps C with nanoscale molecular form after the film material evaporation of the 4th rete, the speed simultaneously controlling the 4th rete evaporation is 7/S, and the thickness after the 4th rete is finally formed is 50-100nm; Wherein, the film material of described 4th rete is silicon-dioxide, forms silicon dioxide layer;
E, plating the 5th rete 6:
The force value in vacuum plating cabin is kept to be more than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the oxide compound of the film material silver of electron beam gun bombardment the 5th rete 6, decompose after the oxide compound evaporation of silver, with nanometer silver form in step D the 4th rete 5 surface formed thin layer, the speed simultaneously controlling the 5th rete evaporation is 1/S, and the thickness after the 5th rete is finally formed is 5-20nm;
F, plating the 6th rete 7:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 6th rete 7, be deposited on the surface of the 5th rete 6 in above-mentioned steps E with nanoscale molecular form after the film material evaporation of the 6th rete, the speed simultaneously controlling the 6th rete evaporation is 1/S, and the thickness after the 6th rete is finally formed is 10-100nm; Wherein, the film material of described 6th rete is ITO, forms ITO layer.
G, plating the 7th rete 8:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 7th rete 8, be deposited on the surface of the 6th rete 7 in above-mentioned steps F with nanoscale molecular form after the film material evaporation of the 7th rete, the speed simultaneously controlling the 7th rete evaporation is 7/S, and the thickness after the 6th rete is finally formed is 10-50nm; Wherein, the film material of described 6th rete is aluminium sesquioxide, zirconium white, silicon-dioxide high rigidity crystal or silicon monoxide high rigidity crystal, forms high rigidity layer.
H, plating the 8th rete 9:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of resistive heating the 8th rete 9, be deposited on the surface of the 7th rete 8 in above-mentioned steps G with nanoscale molecular form after the film material evaporation of the 8th rete, the speed simultaneously controlling the 8th rete evaporation is 1.5/S, and the thickness after the 8th rete is finally formed is 3-10nm; Wherein, the film material of described 8th rete is magnesium fluoride, forms fluoride layer.
In described step 1), substrate 1 is cleaned, dry concrete steps are as follows: substrate 1 is placed in vacuum chamber, cleans with the outside surface 2-3 minute of ion gun bombardment substrate.
When described substrate is by glass ware forming, described preparation method specifically comprises the following steps:
1) substrate 1 is cleaned, dry;
2) plated film is carried out to the outside surface of substrate 1;
A, plate the first rete 2:
Force value in vacuum plating cabin is adjusted to and is less than or equal to 5.0 × 10 -3handkerchief, and the temperature controlled in vacuum plating cabin is 200-300 DEG C, electron beam gun is adopted to bombard the film material of the first rete 2, be deposited on the outside surface of substrate 1 with nanoscale molecular form after the film material evaporation of the first rete, the speed simultaneously controlling the first rete evaporation is 2.5/S, and the thickness after the first rete is finally formed is 10-100nm; Wherein, the film material of described first rete is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
B, plate the second rete 3:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, electron beam gun is adopted to bombard the film material of the second rete 3, be deposited on the surface of the first rete 2 in above-mentioned steps A with nanoscale molecular form after the film material evaporation of the second rete, the speed simultaneously controlling the second rete evaporation is 7/S, and the thickness after the second rete is finally formed is 50-100nm; Wherein, the film material of described second rete is silicon-dioxide, forms silicon dioxide layer;
C, plating third membrane layer 4:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment third membrane layer 4, be deposited on the surface of the second rete 3 in above-mentioned steps B with nanoscale molecular form after the film material evaporation of third membrane layer, the speed simultaneously controlling third membrane layer evaporation is 2.5/S, and the thickness after third membrane layer is finally formed is 10-100nm; Wherein, the film material of described third membrane layer is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
D, plating the 4th rete 5:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 4th rete 5, be deposited on the surface of third membrane layer 4 in above-mentioned steps C with nanoscale molecular form after the film material evaporation of the 4th rete, the speed simultaneously controlling the 4th rete evaporation is 7/S, and the thickness after the 4th rete is finally formed is 50-100nm; Wherein, the film material of described 4th rete is silicon-dioxide, forms silicon dioxide layer;
E, plating the 5th rete 6:
The force value in vacuum plating cabin is kept to be more than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the oxide compound of the film material silver of electron beam gun bombardment the 5th rete 6, decompose after the oxide compound evaporation of silver, with nanometer silver form in step D the 4th rete 5 surface formed thin layer, the speed simultaneously controlling the 5th rete evaporation is 1/S, and the thickness after the 5th rete is finally formed is 5-20nm;
F, plating the 6th rete 7:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 6th rete 7, be deposited on the surface of the 5th rete 6 in above-mentioned steps E with nanoscale molecular form after the film material evaporation of the 6th rete, the speed simultaneously controlling the 6th rete evaporation is 1/S, and the thickness after the 6th rete is finally formed is 10-100nm; Wherein, the film material of described 6th rete is ITO, forms ITO layer.
G, plating the 7th rete 8:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 7th rete 7, be deposited on the surface of the 6th rete 6 in above-mentioned steps F with nanoscale molecular form after the film material evaporation of the 7th rete, the speed simultaneously controlling the 7th rete evaporation is 7/S, and the thickness after the 6th rete is finally formed is 10-50nm; Wherein, the film material of described 6th rete is aluminium sesquioxide, zirconium white, silicon-dioxide high rigidity crystal or silicon monoxide high rigidity crystal, forms high rigidity layer.
H, plating the 8th rete 9:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of resistive heating the 8th rete 9, be deposited on the surface of the 7th rete 8 in above-mentioned steps G with nanoscale molecular form after the film material evaporation of the 8th rete, the speed simultaneously controlling the 8th rete evaporation is 1.5/S, and the thickness after the 8th rete is finally formed is 3-10nm; Wherein, the film material of described 8th rete is magnesium fluoride, forms fluoride layer.
In described step 1), substrate 1 is cleaned, dry concrete steps are as follows: substrate 1 is placed in vacuum chamber, cleans with the outside surface 5-10 minute of ion gun bombardment substrate.

Claims (10)

1. a multi-functional instrument dial plate or camera views, comprise substrate, it is characterized in that: the outside surface of described substrate is sequentially provided with the first rete, the second rete, third membrane layer, the 4th rete, the 5th rete, the 6th rete, the 7th rete and the 8th rete from the inside to surface; Described first rete and third membrane layer are five oxidation three titanium layers, and thickness is 10-100nm; Described second rete and the 4th rete are silicon dioxide layer, and thickness is 50-100nm; Described 5th rete is nano-silver layer, and the thickness of the 5th rete is 5-20nm; Described 6th rete is ITO layer, and thickness is 10-100nm; Described 7th rete is high rigidity layer, and thickness is 10-50nm; Described 8th rete is fluoride layer, and thickness is 3-10nm.
2. a kind of multi-functional instrument dial plate according to claim 1 or camera views, it is characterized in that: the film material of five described oxidation three titanium layers is five oxidation Tritanium/Trititaniums, and shaping by electron beam gun evaporation, the film material of silicon dioxide layer is silicon-dioxide, and shaping by electron beam gun evaporation.
3. a kind of multi-functional instrument dial plate according to claim 1 or camera views, is characterized in that: the film material of described nano-silver layer is the oxide compound of silver, and uses electron beam gun evaporation shaping, and the oxide compound of described silver is Ag 2o, AgO or Ag 2o 3, the film material of described ITO layer is ITO, and shaping by electron beam gun evaporation.
4. a kind of multi-functional instrument dial plate according to claim 1 or camera views, is characterized in that: the film material of described high rigidity layer is aluminium sesquioxide, zirconium white, silica crystals or silicon monoxide crystal, and shaping by electron beam gun evaporation.
5. a kind of multi-functional instrument dial plate according to claim 1 or camera views, is characterized in that: the film material of described fluoride layer is magnesium fluoride, and shaping by resistive heating evaporation.
6. a kind of multi-functional instrument dial plate according to claim 1 or camera views, is characterized in that: described substrate is by resin or glass ware forming.
7. the preparation method of multi-functional instrument dial plate or camera views according to claim 6, it is characterized in that: when described substrate is by resin forming, described preparation method specifically comprises the following steps:
1) substrate is cleaned, dry;
2) plated film is carried out to the outside surface of substrate;
A, plate the first rete:
Force value in vacuum plating cabin is adjusted to and is less than or equal to 5.0 × 10 -3handkerchief, and the temperature controlled in vacuum plating cabin is 50-70 DEG C, electron beam gun is adopted to bombard the film material of the first rete, be deposited on the outside surface of substrate with nanoscale molecular form after the film material evaporation of the first rete, the speed simultaneously controlling the first rete evaporation is 2.5/S, and the thickness after the first rete is finally formed is 10-100nm; Wherein, the film material of described first rete is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
B, plate the second rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, electron beam gun is adopted to bombard the film material of the second rete, be deposited on the surface of the first rete in above-mentioned steps A with nanoscale molecular form after the film material evaporation of the second rete, the speed simultaneously controlling the second rete evaporation is 7/S, and the thickness after the second rete is finally formed is 50-100nm; Wherein, the film material of described second rete is silicon-dioxide, forms silicon dioxide layer;
C, plating third membrane layer:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment third membrane layer, be deposited on the surface of the second rete in above-mentioned steps B with nanoscale molecular form after the film material evaporation of third membrane layer, the speed simultaneously controlling third membrane layer evaporation is 2.5/S, and the thickness after third membrane layer is finally formed is 10-100nm; Wherein, the film material of described third membrane layer is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
D, plating the 4th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 4th rete, be deposited on the surface of third membrane layer in above-mentioned steps C with nanoscale molecular form after the film material evaporation of the 4th rete, the speed simultaneously controlling the 4th rete evaporation is 7/S, and the thickness after the 4th rete is finally formed is 50-100nm; Wherein, the film material of described 4th rete is silicon-dioxide, forms silicon dioxide layer;
E, plating the 5th rete:
The force value in vacuum plating cabin is kept to be more than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the oxide compound of the film material silver of electron beam gun bombardment the 5th rete, decompose after the oxide compound evaporation of silver, with nanometer silver form in step D the 4th rete surface formed thin layer, the speed simultaneously controlling the 5th rete evaporation is 1/S, and the thickness after the 5th rete is finally formed is 5-20nm;
F, plating the 6th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 6th rete, be deposited on the surface of the 5th rete in above-mentioned steps E with nanoscale molecular form after the film material evaporation of the 6th rete, the speed simultaneously controlling the 6th rete evaporation is 1/S, and the thickness after the 6th rete is finally formed is 10-100nm; Wherein, the film material of described 6th rete is ITO, forms ITO layer;
G, plating the 7th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 7th rete, be deposited on the surface of the 6th rete in above-mentioned steps F with nanoscale molecular form after the film material evaporation of the 7th rete, the speed simultaneously controlling the 7th rete evaporation is 7/S, and the thickness after the 6th rete is finally formed is 10-50nm; Wherein, the film material of described 6th rete is aluminium sesquioxide, zirconium white, silicon-dioxide high rigidity crystal or silicon monoxide high rigidity crystal, forms high rigidity layer;
H, plating the 8th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 50-70 DEG C simultaneously, adopt the film material of resistive heating the 8th rete, be deposited on the surface of the 7th rete in above-mentioned steps G with nanoscale molecular form after the film material evaporation of the 8th rete, the speed simultaneously controlling the 8th rete evaporation is 1.5/S, and the thickness after the 8th rete is finally formed is 3-10nm; Wherein, the film material of described 8th rete is magnesium fluoride, forms fluoride layer.
8. the preparation method of a kind of multi-functional instrument dial plate according to claim 7 or camera views, it is characterized in that: in described step 1), substrate is cleaned, dry concrete steps are as follows: substrate is placed in vacuum chamber, cleans with the outside surface 2-3 minute of ion gun bombardment substrate.
9. the preparation method of multi-functional instrument dial plate or camera views according to claim 6, it is characterized in that: when described substrate is by glass ware forming, described preparation method specifically comprises the following steps:
1) substrate is cleaned, dry;
2) plated film is carried out to the outside surface of substrate;
A, plate the first rete:
Force value in vacuum plating cabin is adjusted to and is less than or equal to 5.0 × 10 -3handkerchief, and the temperature controlled in vacuum plating cabin is 200-300 DEG C, electron beam gun is adopted to bombard the film material of the first rete, be deposited on the outside surface of substrate with nanoscale molecular form after the film material evaporation of the first rete, the speed simultaneously controlling the first rete evaporation is 2.5/S, and the thickness after the first rete is finally formed is 10-100nm; Wherein, the film material of described first rete is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
B, plate the second rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, electron beam gun is adopted to bombard the film material of the second rete, be deposited on the surface of the first rete in above-mentioned steps A with nanoscale molecular form after the film material evaporation of the second rete, the speed simultaneously controlling the second rete evaporation is 7/S, and the thickness after the second rete is finally formed is 50-100nm; Wherein, the film material of described second rete is silicon-dioxide, forms silicon dioxide layer;
C, plating third membrane layer:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment third membrane layer, be deposited on the surface of the second rete in above-mentioned steps B with nanoscale molecular form after the film material evaporation of third membrane layer, the speed simultaneously controlling third membrane layer evaporation is 2.5/S, and the thickness after third membrane layer is finally formed is 10-100nm; Wherein, the film material of described third membrane layer is five oxidation Tritanium/Trititaniums, forms five oxidation three titanium layers;
D, plating the 4th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 4th rete, be deposited on the surface of third membrane layer in above-mentioned steps C with nanoscale molecular form after the film material evaporation of the 4th rete, the speed simultaneously controlling the 4th rete evaporation is 7/S, and the thickness after the 4th rete is finally formed is 50-100nm; Wherein, the film material of described 4th rete is silicon-dioxide, forms silicon dioxide layer;
E, plating the 5th rete:
The force value in vacuum plating cabin is kept to be more than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the oxide compound of the film material silver of electron beam gun bombardment the 5th rete, decompose after the oxide compound evaporation of silver, with nanometer silver form in step D the 4th rete surface formed thin layer, the speed simultaneously controlling the 5th rete evaporation is 1/S, and the thickness after the 5th rete is finally formed is 5-20nm;
F, plating the 6th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 6th rete, be deposited on the surface of the 5th rete in above-mentioned steps E with nanoscale molecular form after the film material evaporation of the 6th rete, the speed simultaneously controlling the 6th rete evaporation is 1/S, and the thickness after the 6th rete is finally formed is 10-100nm; Wherein, the film material of described 6th rete is ITO, forms ITO layer;
G, plating the 7th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of electron beam gun bombardment the 7th rete, be deposited on the surface of the 6th rete in above-mentioned steps F with nanoscale molecular form after the film material evaporation of the 7th rete, the speed simultaneously controlling the 7th rete evaporation is 7/S, and the thickness after the 6th rete is finally formed is 10-50nm; Wherein, the film material of described 6th rete is aluminium sesquioxide, zirconium white, silicon-dioxide high rigidity crystal or silicon monoxide high rigidity crystal, forms high rigidity layer;
H, plating the 8th rete:
The force value in vacuum plating cabin is kept to be less than or equal to 5.0 × 10 -3handkerchief, keep the temperature in vacuum plating cabin to be 200-300 DEG C simultaneously, adopt the film material of resistive heating the 8th rete, be deposited on the surface of the 7th rete in above-mentioned steps G with nanoscale molecular form after the film material evaporation of the 8th rete, the speed simultaneously controlling the 8th rete evaporation is 1.5/S, and the thickness after the 8th rete is finally formed is 3-10nm; Wherein, the film material of described 8th rete is magnesium fluoride, forms fluoride layer.
10. the preparation method of a kind of multi-functional instrument dial plate according to claim 9 or camera views, it is characterized in that: in described step 1), substrate is cleaned, dry concrete steps are as follows: substrate is placed in vacuum chamber, cleans with the outside surface 5-10 minute of ion gun bombardment substrate.
CN201511028319.6A 2015-12-31 2015-12-31 Multifunctional instrument panel or camera window and preparation method thereof Pending CN105441873A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201878491U (en) * 2010-11-30 2011-06-22 中国乐凯胶片集团公司 Radiation protection screen
CN103984120A (en) * 2014-05-30 2014-08-13 奥特路（漳州）光学科技有限公司 Method for manufacturing blue light-resistant optical lens
CN104339749A (en) * 2013-08-06 2015-02-11 三星显示有限公司 Multi-layer optical coating structure having an antibacterial coating layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201878491U (en) * 2010-11-30 2011-06-22 中国乐凯胶片集团公司 Radiation protection screen
CN104339749A (en) * 2013-08-06 2015-02-11 三星显示有限公司 Multi-layer optical coating structure having an antibacterial coating layer
CN103984120A (en) * 2014-05-30 2014-08-13 奥特路（漳州）光学科技有限公司 Method for manufacturing blue light-resistant optical lens

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