CN105427981A - Preparation methods for voltage-sensitive ceramic valve block resistant to large impact current and insulation layer material of voltage-sensitive ceramic valve block - Google Patents

Preparation methods for voltage-sensitive ceramic valve block resistant to large impact current and insulation layer material of voltage-sensitive ceramic valve block Download PDF

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Publication number
CN105427981A
CN105427981A CN201510996804.6A CN201510996804A CN105427981A CN 105427981 A CN105427981 A CN 105427981A CN 201510996804 A CN201510996804 A CN 201510996804A CN 105427981 A CN105427981 A CN 105427981A
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preparation
resistive formation
valve block
slurry
sensitive ceramic
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何金良
胡军
赵洪峰
谢清云
孟鹏飞
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Tsinghua University
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Tsinghua University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)

Abstract

The invention relates to preparation methods for a voltage-sensitive ceramic valve block resistant to a large impact current and an insulation layer material of the voltage-sensitive ceramic valve block. The preparation step comprises preparation of a high-resistance layer and preparation of an inorganic enamel layer, wherein the preparation of the high-resistance layer comprises preparation of high-resistance powder, preparation of a high-resistance paste and sintering of the high-resistance layer, and the preparation of the inorganic enamel layer comprises preparation of an inorganic enamel paste and sintering of the inorganic enamel layer. The preparation methods have the advantages that the working reliability of a zinc oxide voltage-sensitive valve block in a condition of a large current is improved, and the working controllability of the zinc oxide voltage-sensitive valve block in the condition of the large current is guaranteed.

Description

Withstand large impulse current voltage-sensitive ceramic valve block and insulating layer material preparation method thereof
Technical field
The present invention relates to electrical material field, particularly a kind of preparation method of insulating layer material.
Background technology
ZnO varistor is primary raw material with ZnO, with the addition of a small amount of Bi2O3, MnO2, Sb2O3, Co2O3, SiO2 and Cr2O3 etc., adopts ceramic sintering process to be prepared from.Have the advantages such as excellent nonlinear wind vibration and large discharge capacity because of it, ZnO varistor is widely used in electric power system lightning protection and electric equipment protection as the core parts of electric power system lightning arrester always.In recent years, the correlative study of high voltage gradient zinc oxide varistor becomes one of the study hotspot in zinc oxide arrester field.But research finds, after the voltage gradient raising of zinc oxide varistor valve, under 8/20s waveform lightning impulse current and 4/10s waveform large impact electric current, the residual voltage of unit height resistor disc enlarges markedly, and proposes more harsh requirement to the side insulation of piezo-resistance.
Show according to knowhow and correlation test data, high-voltage gradient resistor disc should be able to tolerate twice 4/10s large impact electric current (according to GB11032-2010 in the section of an arrester test of reality, for the lightning arrester of different brackets, impact withstand requirements also different).And at present the processing method of China's Zinc-oxide resistor-piece side insulation to be generally after resistor disc pre-burning dip-coating or to smear the inorganic resistive formation of one deck, after resistor disc sintering, then be coated with the organic glaze of one deck or upper glass glaze; What have is not then coated with inorganic resistive formation, the organic glaze of a last layer or RTV (room temperature vulcanized silicone rubber) coating.
The domestic inorganic resistive formation generally adopted, normally forms with the oxide of several element of Bi-Sb-Si-Li.But this side material rough surface, easy attract dust and moisture.In sintering process, the inorganic resistive formation of resistor-piece side can from outward appearance to inner essence permeate, and the region non linear coefficient penetrated into reduces, and the effective flow area of the valve block of minor diameter is reduced, and the burden increasing the weight of resistor-piece side glaze conversely makes.In addition resistor disc is when shaping, and its side, edge rubs mutually with die sleeve wall, and compact density is less better, is a weak link.Inorganic resistive formation infiltration is entered, and make resistor-piece side insulation resistance be greater than the middle bulk resistance of resistor disc, the defect of side, resistor disc edge is unlikely to the edge breakdown causing resistor disc.Therefore inorganic resistive formation is not contributed raising resistor disc large impact electric current tolerance, but can improve resistor disc 2ms square wave discharge capacity (because of 2ms square wave through-flow time, much lower when the voltage gradient at resistor disc two ends tolerates than heavy current impact).
And use the advantage of organic glaze to be to nothing infiltration in resistor disc, and implementing process is simple.To be organic glaze mate with the thermal coefficient of expansion of resistor disc difficulty shortcoming, and organic glaze does not have elasticity, easily forms micro-crack when resistor disc is heated, particularly on glaze layer thicker time.The adhesive force of insulating barrier and resistor disc also has problem.Glaze layer is also not easily gone up very thick (because of sagging during hot setting) in addition, must repeatedly glazing repeatedly solidify.The not resistance to electric arc calcination of organic glaze simultaneously.The coating of organic glaze can obtain certain effect to raising resistor disc 4/10s heavy current impact tolerance, but nargin is little.In addition, current organic glaze short time can only tolerate the temperature of 200 DEG C.
Glass glaze smooth surface, not easily sticky ash and adsorption moisture, glaze layer heatproof is higher than organic glaze.On some employing resistor discs after resistive formation, outside is compound one deck glass glaze again, but the resistor disc to low-voltage gradient, and big current tolerance cannot reach specification requirement.
During coating silicon rubber coating, normal employing one-component RTV, process implementing is simple, and substantially not by limiting curing time, thickness of insulating layer can regulate easily.Its curing time is very short, does not need hot setting.RTV makes resistor-piece side insulation, and its elastomeric property and resistor disc thermal coefficient of expansion match, and simultaneously water-fast, the resistance to electric arc of RTV insulating barrier, insulation resistance are high, and spraying coating process can make surperficial unusual light.Adopt RTV can improve resistor disc 4/10s heavy current impact tolerance significantly.But RTV insulating barrier can only heatproof 200 DEG C.
Summary of the invention
The object of the invention is to solve the problem, devising a kind of withstand large impulse current voltage-sensitive ceramic valve block and insulating layer material preparation method thereof.Specific design scheme is:
A kind of withstand large impulse current voltage-sensitive ceramic valve block and insulating layer material preparation method thereof, preparation process comprises: resistive formation preparation, the preparation of inorganic glaze layer, described resistive formation preparation comprises high resistant preparation, high resistance slurry preparation, resistive formation sintering, and described inorganic glaze layer preparation comprises the preparation of inorganic glaze slurry, inorganic glaze layer sintering.
Described high resistant powder preparation process is:
By Bi 2o 3, Sb 2o 3, SiO 2, B 2o 3, TiO 2homogeneous phase mixing, the ratio of quality and the number of copies of each composition of mixing is Bi 2o 31-3 part, Sb 2o 31-3 part, SiO 23-5 part, B 2o 30.5-2 part, TiO 20.5-1 part,
Described high resistance slurry preparation process is:
Preparation quality percent concentration is the polyvinyl alcohol water solution of 15 ~ 25%;
Mixed with straight alcohol by polyvinyl alcohol water solution, the volume parts of mixing is than being polyvinyl alcohol water solution: straight alcohol=3:1;
The mixed solution of described high resistant sauce and polyvinyl alcohol water solution and straight alcohol is carried out sand milling, and the sand milling time is 2-4h, obtains resistive formation slurry after sand milling, and the solid content of described resistive formation slurry is 10 ~ 60%.
Described resistive formation sintering step is:
Described resistive formation slurry is evenly coated in the side of the shaped alumina zinc varistor valve biscuit of non-binder removal, average thickness is less than 2mm;
Treat the ethanol volatilization in resistive formation slurry, resistive formation slurry becomes dry and can not flow;
Zinc oxide varistor valve biscuit is fired;
Obtain zinc oxide varistor valve.
The temperature of described resistive formation sintering controls:
From room temperature to 550 DEG C, 4 hours heating-up times,
550 DEG C of insulations 4 hours, carry out binder removal,
From 550 DEG C to 950 DEG C, 4 hours heating-up times,
From 950 DEG C to 1150 DEG C, 2 hours heating-up times,
Keep 1150 DEG C, temperature retention time 1 hour,
Cool with stove.
Described inorganic glaze slurry preparation step is:
By aluminium dihydrogen phosphate Al (H 2pO 4) 3water-soluble, obtain the aluminium dihydrogen phosphate aqueous solution that mass percent concentration is 10 ~ 30%;
By SiO 2homogeneous phase mixing, in described aluminium dihydrogen phosphate aqueous solution, makes in described aluminium dihydrogen phosphate aqueous solution, described SiO 2with Al (H 2pO 4) 3ratio of quality and the number of copies be SiO 20.5-1.5 part, Al (H 2pO 4) 31-3 part;
By TiO 2homogeneous phase mixing, in described aluminium dihydrogen phosphate aqueous solution, makes in described aluminium dihydrogen phosphate aqueous solution, described TiO 2with Al (H 2pO 4) 3ratio of quality and the number of copies be TiO 20.3-0.5 part, Al (H 2pO 4) 31-3 part;
Obtain inorganic glaze slurry.
The step of described inorganic glaze layer sintering is:
By inorganic glaze slurry even application on the resistive formation side of zinc oxide varistor valve, coating layer thickness is 0.2-0.3mm;
At 90-110 DEG C of insulation 4h, form the inorganic glaze layer of high-adhesive-strength;
Heat to 350-500 DEG C, dry 3-5h, form white, smooth side insulation layer in the side of zinc oxide varistor valve.
The withstand large impulse current voltage-sensitive ceramic valve block obtained by technique scheme of the present invention and insulating layer material preparation method thereof, its beneficial effect is:
Improve the functional reliability of ZnO Varistor in big current situation, ensure that the work controllability of ZnO Varistor in big current situation.
Accompanying drawing explanation
Fig. 1 is the structural representation of the high-voltage gradient zinc oxide varistor of withstand large impulse current of the present invention and side high-resistance layer thereof, inorganic glaze layer;
Fig. 2 is the high-voltage gradient zinc oxide varistor of withstand large impulse current of the present invention and side high-resistance layer thereof, structural representation is cutd open in the side of inorganic glaze layer;
In figure, 1, high-voltage gradient zinc oxide varistor; 2, resistive formation; 3, inorganic glaze layer.
Embodiment
Below in conjunction with accompanying drawing, the present invention is specifically described.
Fig. 1 is the structural representation of the high-voltage gradient zinc oxide varistor of withstand large impulse current of the present invention and side high-resistance layer thereof, inorganic glaze layer; Fig. 2 is the high-voltage gradient zinc oxide varistor of withstand large impulse current of the present invention and side high-resistance layer thereof, structural representation is cutd open in the side of inorganic glaze layer, as shown in Figure 1 and Figure 2, a kind of withstand large impulse current voltage-sensitive ceramic valve block and insulating layer material preparation method thereof, preparation process comprises: resistive formation preparation, the preparation of inorganic glaze layer, described resistive formation preparation comprises high resistant preparation, high resistance slurry preparation, resistive formation sintering, and described inorganic glaze layer preparation comprises the preparation of inorganic glaze slurry, inorganic glaze layer sintering.
Described high resistant powder preparation process is:
By Bi 2o 3, Sb 2o 3, SiO 2, B 2o 3, TiO 2homogeneous phase mixing, the ratio of quality and the number of copies of each composition of mixing is Bi 2o 31-3 part, Sb 2o 31-3 part, SiO 23-5 part, B 2o 30.5-2 part, TiO 20.5-1 part,
Described high resistance slurry preparation process is:
Preparation quality percent concentration is the polyvinyl alcohol water solution of 15 ~ 25%;
Mixed with straight alcohol by polyvinyl alcohol water solution, the volume parts of mixing is than being polyvinyl alcohol water solution: straight alcohol=3:1;
The mixed solution of described high resistant sauce and polyvinyl alcohol water solution and straight alcohol is carried out sand milling, and the sand milling time is 2-4h, obtains resistive formation slurry after sand milling, and the solid content of described resistive formation slurry is 10 ~ 60%.
Described resistive formation sintering step is:
Described resistive formation slurry is evenly coated in the side of the shaped alumina zinc varistor valve biscuit of non-binder removal, average thickness is less than 2mm;
Treat the ethanol volatilization in resistive formation slurry, resistive formation slurry becomes dry and can not flow;
Zinc oxide varistor valve biscuit is fired;
Obtain zinc oxide varistor valve.
The temperature of described resistive formation sintering controls:
From room temperature to 550 DEG C, 4 hours heating-up times,
550 DEG C of insulations 4 hours, carry out binder removal,
From 550 DEG C to 950 DEG C, 4 hours heating-up times,
From 950 DEG C to 1150 DEG C, 2 hours heating-up times,
Keep 1150 DEG C, temperature retention time 1 hour,
Cool with stove.
Described inorganic glaze slurry preparation step is:
By aluminium dihydrogen phosphate Al (H 2pO 4) 3water-soluble, obtain the aluminium dihydrogen phosphate aqueous solution that mass percent concentration is 10 ~ 30%;
By SiO 2homogeneous phase mixing, in described aluminium dihydrogen phosphate aqueous solution, makes in described aluminium dihydrogen phosphate aqueous solution, described SiO 2with Al (H 2pO 4) 3ratio of quality and the number of copies be SiO 20.5-1.5 part, Al (H 2pO 4) 31-3 part;
By TiO 2homogeneous phase mixing, in described aluminium dihydrogen phosphate aqueous solution, makes in described aluminium dihydrogen phosphate aqueous solution, described TiO 2with Al (H 2pO 4) 3ratio of quality and the number of copies be TiO 20.3-0.5 part, Al (H 2pO 4) 31-3 part;
Obtain inorganic glaze slurry.
The step of described inorganic glaze layer sintering is:
By inorganic glaze slurry even application on the resistive formation side of zinc oxide varistor valve, coating layer thickness is 0.2-0.3mm;
At 90-110 DEG C of insulation 4h, form the inorganic glaze layer of high-adhesive-strength;
Heat to 350-500 DEG C, dry 3-5h, form white, smooth side insulation layer in the side of zinc oxide varistor valve.
Below introduce the embodiment of the inventive method.
Embodiment one
According to the side insulation layer preparation method of patent specification introduction of the present invention, side insulation is carried out to the high-voltage gradient varistor valve that certain model is D35.
(1) preparation quality percent concentration is the polyvinyl alcohol water solution of 18%, by polyvinyl alcohol water solution and straight alcohol with volume ratio 3:1 Homogeneous phase mixing, obtains mixed solution; Be the Bi of 15% by mass percent 2o 3, mass percent is the Sb of 25% 2o 3, mass percent is the SiO of 35% 2, mass percent is the B of 20% 2o 3be the TiO of 5% with mass percent 2homogeneous phase mixing, obtains mixed powder, is mixed by above-mentioned mixed powder and put into horizontal sand mill sand milling 4 hours with mixed solution, obtains the resistive formation slurry that solid content is 25%;
(2) above-mentioned resistive formation slurry is evenly coated in the side of the shaped alumina zinc varistor valve biscuit of non-binder removal, average thickness is less than 2 millimeters, until in resistive formation slurry ethanol volatilization, resistive formation slurry become dry and after can not flowing, zinc oxide varistor valve biscuit is fired, obtain zinc oxide varistor valve, the temperature controlled processes fired is as follows:
From room temperature to 550 DEG C, 4 hours heating-up times,
550 DEG C of insulations 4 hours, carry out binder removal,
From 550 DEG C to 950 DEG C, 4 hours heating-up times,
From 950 DEG C to 1150 DEG C, 2 hours heating-up times,
Keep 1150 DEG C, temperature retention time 1 hour,
Cool with stove;
(3) by aluminium dihydrogen phosphate Al (H 2pO 4) 3water-soluble, obtain the aluminium dihydrogen phosphate aqueous solution that mass percent concentration is 15%, at normal temperatures, by SiO 2, TiO 2homogeneous phase mixing, in above-mentioned aluminium dihydrogen phosphate aqueous solution, makes SiO 2, TiO 2mass percent concentration in aluminium dihydrogen phosphate aqueous solution is respectively 7%, 3%, obtain inorganic glaze slurry, by inorganic glaze slurry even application on the resistive formation side of zinc oxide varistor valve, coating layer thickness is 0.3 millimeter, and 95 DEG C of insulations 4 hours, form the inorganic glaze layer of high-adhesive-strength, heat to 400 DEG C, dry 5 hours, form white, smooth side insulation layer in the side of zinc oxide varistor valve.
After adopting this Novel side insulating barrier, this model is that the high-voltage gradient resistor disc 4/10 μ s large impact electric current tolerance of D35 can reach 68kA.
Embodiment two
According to the preparation method described in embodiment one, certain model high-voltage gradient varistor valve that is D70 is carried out to the preparation of side insulation layer.
(1) preparation quality percent concentration is the polyvinyl alcohol water solution of 23%, by polyvinyl alcohol water solution and straight alcohol with volume ratio 3:1 Homogeneous phase mixing, obtains mixed solution; Be the Bi of 25% by mass percent 2o 3, mass percent is the Sb of 15% 2o 3, mass percent is the SiO of 45% 2, mass percent is the B of 10% 2o 3be the TiO of 5% with mass percent 2homogeneous phase mixing, obtains mixed powder, is mixed by above-mentioned mixed powder and put into horizontal sand mill sand milling 3 hours with mixed solution, obtains the resistive formation slurry that solid content is 50%;
(2) above-mentioned resistive formation slurry is evenly coated in the side of the shaped alumina zinc varistor valve biscuit of non-binder removal, average thickness is less than 2 millimeters, until in resistive formation slurry ethanol volatilization, resistive formation slurry become dry and after can not flowing, zinc oxide varistor valve biscuit is fired, obtain zinc oxide varistor valve, the temperature controlled processes fired is as follows:
From room temperature to 550 DEG C, 4 hours heating-up times,
550 DEG C of insulations 4 hours, carry out binder removal,
From 550 DEG C to 950 DEG C, 4 hours heating-up times,
From 950 DEG C to 1150 DEG C, 2 hours heating-up times,
Keep 1150 DEG C, temperature retention time 1 hour,
Cool with stove;
(3) by aluminium dihydrogen phosphate Al (H 2pO 4) 3water-soluble, obtain the aluminium dihydrogen phosphate aqueous solution that mass percent concentration is 25%, at normal temperatures, by SiO 2, TiO 2homogeneous phase mixing, in above-mentioned aluminium dihydrogen phosphate aqueous solution, makes SiO 2, TiO 2mass percent concentration in aluminium dihydrogen phosphate aqueous solution is respectively 13%, 3%, obtain inorganic glaze slurry, by inorganic glaze slurry even application on the resistive formation side of zinc oxide varistor valve, coating layer thickness is 0.3 millimeter, and 110 DEG C of insulations 4 hours, form the inorganic glaze layer of high-adhesive-strength, heat to 400 DEG C, dry 5 hours, form white, smooth side insulation layer in the side of zinc oxide varistor valve.
After adopting this Novel side insulating barrier, this model is that the high-voltage gradient resistor disc 4/10 μ s large impact electric current tolerance of D70 can reach 97kA.
Resistive formation can to the internal penetration of ZnO Varistor, thus reduce the current density at ZnO Varistor edge, and then avoid ZnO Varistor generation perforation destroy in edge when accepting large impact electric current, improve the functional reliability of ZnO Varistor in big current situation.
Aluminium dihydrogen phosphate in inorganic glaze very thickness, can solidify at normal temperatures, aluminium dihydrogen phosphate and SiO 2, TiO 2after inorganic salts are composite, there is high temperature resistant, the characteristic such as antidetonation, anti-strip, high temperature resistant airflow scouring, therefore further ensure the work controllability of ZnO Varistor in big current situation.
Technique scheme only embodies the optimal technical scheme of technical solution of the present invention, and those skilled in the art all embody principle of the present invention to some variations that wherein some part may be made, and belong within protection scope of the present invention.

Claims (6)

1. a withstand large impulse current voltage-sensitive ceramic valve block and insulating layer material preparation method thereof, it is characterized in that, preparation process comprises: resistive formation (2) preparation, inorganic glaze layer (3) preparation, described resistive formation preparation comprises high resistant preparation, high resistance slurry preparation, resistive formation sintering, and described inorganic glaze layer preparation comprises the preparation of inorganic glaze slurry, inorganic glaze layer sintering.
2., according to the withstand large impulse current voltage-sensitive ceramic valve block described in claim 1 and insulating layer material preparation method thereof, it is characterized in that,
Described high resistant powder preparation process is:
By Bi2O3, Sb2O3, SiO2, B2O3, TiO2 Homogeneous phase mixing, the ratio of quality and the number of copies of each composition of mixing is Bi2O31-3 part, Sb2O31-3 part, SiO23-5 part, B2O30.5-2 part, TiO20.5-1 part,
Described high resistance slurry preparation process is:
Preparation quality percent concentration is the polyvinyl alcohol water solution of 15 ~ 25%;
Mixed with straight alcohol by polyvinyl alcohol water solution, the volume parts of mixing is than being polyvinyl alcohol water solution: straight alcohol=3:1;
The mixed solution of described high resistant sauce and polyvinyl alcohol water solution and straight alcohol is carried out sand milling, and the sand milling time is 2-4h, obtains resistive formation slurry after sand milling, and the solid content of described resistive formation slurry is 10 ~ 60%.
3. according to the withstand large impulse current voltage-sensitive ceramic valve block described in claim 2 and insulating layer material preparation method thereof, it is characterized in that, described resistive formation sintering step is:
Described resistive formation slurry is evenly coated in the side of the shaped alumina zinc varistor valve biscuit of non-binder removal, average thickness is less than 2mm;
Treat the ethanol volatilization in resistive formation slurry, resistive formation slurry becomes dry and can not flow;
Zinc oxide varistor valve biscuit is fired;
Obtain zinc oxide varistor valve (1).
4. according to the withstand large impulse current voltage-sensitive ceramic valve block described in claim 3 and insulating layer material preparation method thereof, it is characterized in that, the temperature control of described resistive formation sintering is:
From room temperature to 550 DEG C, 4 hours heating-up times,
550 DEG C of insulations 4 hours, carry out binder removal,
From 550 DEG C to 950 DEG C, 4 hours heating-up times,
From 950 DEG C to 1150 DEG C, 2 hours heating-up times,
Keep 1150 DEG C, temperature retention time 1 hour,
Cool with stove.
5. according to the withstand large impulse current voltage-sensitive ceramic valve block described in claim 1 and insulating layer material preparation method thereof, it is characterized in that, described inorganic glaze slurry preparation step is:
By water-soluble for aluminium dihydrogen phosphate Al (H2PO4) 3, obtain the aluminium dihydrogen phosphate aqueous solution that mass percent concentration is 10 ~ 30%;
By SiO2 Homogeneous phase mixing in described aluminium dihydrogen phosphate aqueous solution, make in described aluminium dihydrogen phosphate aqueous solution, the ratio of quality and the number of copies of described SiO2 and Al (H2PO4) 3 is SiO20.5-1.5 part, Al (H2PO4) 31-3 part;
By TiO2 Homogeneous phase mixing in described aluminium dihydrogen phosphate aqueous solution, make in described aluminium dihydrogen phosphate aqueous solution, the ratio of quality and the number of copies of described TiO2 and Al (H2PO4) 3 is TiO20.3-0.5 part, Al (H2PO4) 31-3 part;
Obtain inorganic glaze slurry.
6. according to the withstand large impulse current voltage-sensitive ceramic valve block described in claim 5 and insulating layer material preparation method thereof, it is characterized in that, the step of described inorganic glaze layer sintering is:
By inorganic glaze slurry even application on the resistive formation side of zinc oxide varistor valve, coating layer thickness is 0.2-0.3mm;
At 90-110 DEG C of insulation 4h, form the inorganic glaze layer of high-adhesive-strength;
Heat to 350-500 DEG C, dry 3-5h, form white, smooth side insulation layer in the side of zinc oxide varistor valve.
CN201510996804.6A 2015-12-25 2015-12-25 Preparation methods for voltage-sensitive ceramic valve block resistant to large impact current and insulation layer material of voltage-sensitive ceramic valve block Pending CN105427981A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105869810A (en) * 2016-04-06 2016-08-17 清华大学 Fabrication method for side-surface insulation layer of high-voltage gradient zinc oxide voltage-sensitive valve
CN106187177A (en) * 2016-07-14 2016-12-07 安徽樵森电气科技股份有限公司 A kind of zirconia ceramics insulator and preparation method thereof
CN109485406A (en) * 2018-11-28 2019-03-19 清华大学 Improve the through-flow new liquid side high-resistance layer preparation process of Zinc-oxide piezoresistor 2ms square wave
CN109553410A (en) * 2018-11-28 2019-04-02 清华大学 The preparation process of novel inorganic resistive formation for ZnO varistor
CN110015844A (en) * 2019-03-28 2019-07-16 中国科学院宁波材料技术与工程研究所 A kind of insulating glass and its preparation method and application
CN111517648A (en) * 2020-05-09 2020-08-11 温州益坤电气股份有限公司 Preparation method of water-based glass glaze and resistor disc

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1571078A (en) * 2004-05-13 2005-01-26 上海大学 Method for preparing high throughflow nanometre composite lightning arrester valve plate
CN101759431A (en) * 2009-12-10 2010-06-30 华中科技大学 Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof
CN101891992A (en) * 2010-07-26 2010-11-24 深圳市银星电气股份有限公司 Insulating coating on side face of zinc oxide lightning arrester valve plate and coating method thereof
CN102249666A (en) * 2011-05-13 2011-11-23 中国科学院宁波材料技术与工程研究所 Method for preparing direct-current zinc oxide resistance card
CN103325512A (en) * 2013-06-28 2013-09-25 清华大学 Preparation method of lateral insulating layer of high-gradient zinc oxide voltage-sensitive valve plate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1571078A (en) * 2004-05-13 2005-01-26 上海大学 Method for preparing high throughflow nanometre composite lightning arrester valve plate
CN101759431A (en) * 2009-12-10 2010-06-30 华中科技大学 Zinc oxide piezoresistor material with low electric potential gradient and preparation method thereof
CN101891992A (en) * 2010-07-26 2010-11-24 深圳市银星电气股份有限公司 Insulating coating on side face of zinc oxide lightning arrester valve plate and coating method thereof
CN102249666A (en) * 2011-05-13 2011-11-23 中国科学院宁波材料技术与工程研究所 Method for preparing direct-current zinc oxide resistance card
CN103325512A (en) * 2013-06-28 2013-09-25 清华大学 Preparation method of lateral insulating layer of high-gradient zinc oxide voltage-sensitive valve plate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105869810A (en) * 2016-04-06 2016-08-17 清华大学 Fabrication method for side-surface insulation layer of high-voltage gradient zinc oxide voltage-sensitive valve
CN106187177A (en) * 2016-07-14 2016-12-07 安徽樵森电气科技股份有限公司 A kind of zirconia ceramics insulator and preparation method thereof
CN109485406A (en) * 2018-11-28 2019-03-19 清华大学 Improve the through-flow new liquid side high-resistance layer preparation process of Zinc-oxide piezoresistor 2ms square wave
CN109553410A (en) * 2018-11-28 2019-04-02 清华大学 The preparation process of novel inorganic resistive formation for ZnO varistor
CN110015844A (en) * 2019-03-28 2019-07-16 中国科学院宁波材料技术与工程研究所 A kind of insulating glass and its preparation method and application
CN110015844B (en) * 2019-03-28 2021-10-29 中国科学院宁波材料技术与工程研究所 Insulating glass and preparation method and application thereof
CN111517648A (en) * 2020-05-09 2020-08-11 温州益坤电气股份有限公司 Preparation method of water-based glass glaze and resistor disc

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