CN105420693A - Heating device for MOCVD reactor - Google Patents
Heating device for MOCVD reactor Download PDFInfo
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- CN105420693A CN105420693A CN201510857500.1A CN201510857500A CN105420693A CN 105420693 A CN105420693 A CN 105420693A CN 201510857500 A CN201510857500 A CN 201510857500A CN 105420693 A CN105420693 A CN 105420693A
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- heating
- mocvd reactor
- heating unit
- support baseboard
- gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Drying Of Solid Materials (AREA)
Abstract
The invention discloses a heating device for an MOCVD reactor. The heating device comprises a sheet carrying disc, heat insulation shielding boards and a supporting bottom board. An inner heating cavity is defined by the sheet carrying disc, the heat insulation shielding boards and the supporting bottom board. Multiple supporting columns located in the inner heating cavity are arranged on the supporting bottom board. Multiple shielding layer boards are evenly arranged in the inner heating cavity from bottom to top at intervals, wherein the supporting columns are sleeved with the shielding layer boards. The tops of the supporting columns are provided with a top gas jetting board. A heating assembly is arranged on the top gas jetting board. Gas inflow pipes communicated with the top gas jetting board penetrate the supporting bottom board. A bottom gas jetting board communicated with the inner heating cavity is further arranged on the supporting bottom board. The heating device has the beneficial effects of being simple, compact, stable and reliable in use and capable of prolonging the service life of the heating assembly.
Description
Technical field
The present invention relates generally to the heating technique in MOCVD device, particularly relates to a kind of for the heating unit in MOCVD reactor.
Background technology
MOCVD(MetalOrganicChemicalVaporDeposition) equipment, i.e. metal-organic chemical vapor deposition equipment, it especially has the effect of irreplaceability in LED industry in semiconductor industry, be equipment crucial especially.This equipment integrates each subjects such as Fluid Mechanics Computation, heating power conduction, system integration control, compound growth, is the equipment of a kind of high-tech, new technology high concentration; Be break through industry development bottleneck, improve the strategic high-tech semiconductor equipment of level of industry.
Due to the advantage that MOCVD is outstanding in Semiconductor Film Growth, current MOCVD also illustrates good application prospect at ferroelectric membranc, brightness Mo growth fermentation, but in the growing environment of ferroelectric membranc or brightness Mo, there is oxidizing gas as oxygen, hydrogen sulfide or there will be active sulphur atom heating element to corrosive nature in technological process, thus corrosion is produced to the components and parts of reaction chamber inside.The temperature of well heater is the highest in whole reaction chamber, thus its to oxidizing gas or active sulphur atom also comparatively responsive.Therefore, well heater is also very easy to be corroded, and causes the surface topography of well heater to change, thus affects the performance of well heater, and then causes the temperature homogeneity in reaction chamber to decline, and causes the reduction of whole equipment performance.
In order to solve the impact of reaction chamber internal atmosphere on well heater, a kind of method generally adopted is region protective gas being passed into well heater place at present, with protect well heater from reaction chamber on the impact of well heater objectionable impurities.But; the protective gas being passed into heater area is at present generally the bottom section that a tracheae is passed into well heater; protective gas gas out forms the atmosphere of protection well heater afterwards by diffusion from tracheae, therefore protected effect is unsatisfactory, and the work-ing life of well heater is shorter.
Summary of the invention
The technical problem to be solved in the present invention overcomes the deficiencies in the prior art, provide a kind of simply compact, use reliable and stable, heating component work-ing life can be extended for the heating unit in MOCVD reactor.
For solving the problems of the technologies described above, the present invention by the following technical solutions:
A kind of for the heating unit in MOCVD reactor, comprise slide glass dish, thermal stabilization shield plate and support baseboard, three encloses formation heating bore, described support baseboard is provided with multiple pillar stiffener being positioned at heating bore, described heating bore from bottom to top uniform intervals is provided with polylith and is placed on shielding laminate on described pillar stiffener, described pillar stiffener top is equiped with top gas jet tray, described top gas jet tray is equiped with heating component, support baseboard is equipped with the inlet pipe communicated with top gas jet tray, described support baseboard is also equiped with the bottom gas jet tray communicated with heating bore.
Further improvement as technique scheme:
It is the upper plate and lower plate that dock up and down that described top gas jet tray comprises, and form air cavity between described upper plate and lower plate, described inlet pipe communicates with air cavity, and described upper plate offers multiple tops gas orifice, described heating component is installed on upper plate.
Described heating component comprises heating element, supporting wire and base, and described base is installed on upper plate, and described supporting wire is installed on base, and described heating element is installed on supporting wire.
Described base offers the base gas orifice communicated with air cavity.
Described bottom gas jet tray offers multiple bottom gas orifice communicated with heating bore.
Described support baseboard offers the gas docking port communicated with bottom gas orifice.
Described bottom gas jet tray and gas docking port are all arranged on the mid-way of support baseboard.
Be provided with support ring between described support baseboard and the shielding laminate above it and between each adjacent shielding laminate, each described support ring is set on pillar stiffener.
Compared with prior art, the invention has the advantages that:
Of the present invention for the heating unit in MOCVD reactor, support baseboard is provided with multiple pillar stiffener being positioned at heating bore, heating bore from bottom to top uniform intervals is provided with polylith and is placed on shielding laminate on pillar stiffener, pillar stiffener top is equiped with top gas jet tray, top gas jet tray is equiped with heating component, support baseboard is equipped with the inlet pipe communicated with top gas jet tray, support baseboard is also equiped with the bottom gas jet tray communicated with heating bore.In this structure, shielding gas is from the outside inside entering this heating unit through pipeline of reaction chamber, and part shielding gas enters heating bore by bottom gas jet tray, makes heating bore form a kind of protective atmosphere; Another part shielding gas sprays to heating component by top gas jet tray, forms protective atmosphere to heating component.Above-mentioned protective atmosphere not only defines malleation at heating bore; impel the gas of heating unit outside can not flow to heating bore; and another part shielding gas directly sprays to heating component; make to form shielding gas atmosphere all the time around near heating component; avoid the impact of heating component by reaction chamber internal-response gas; extend the work-ing life of heating component, it be simple and compact for structure, use reliable and stable.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention for the heating unit in MOCVD reactor.
Fig. 2 is the local structure structure for amplifying schematic diagram of the present invention for the heating unit in MOCVD reactor.
Fig. 3 is the structural representation of the present invention for support baseboard in the heating unit in MOCVD reactor.
Fig. 4 is the structural representation of the present invention for bottom gas jet tray in the heating unit in MOCVD reactor.
Fig. 5 is the local structure structure for amplifying schematic diagram (show depending on go out heating component) of the present invention for the heating unit in MOCVD reactor.
In figure, each label represents:
1, slide glass dish; 2, thermal stabilization shield plate; 3, support baseboard; 31, pillar stiffener; 32, gas docking port; 4, heating bore; 5, laminate is shielded; 6, top gas jet tray; 61, upper plate; 611, top gas orifice; 62, lower plate; 63, air cavity; 7, heating component; 71, heating element; 72, supporting wire; 73, base; 731, base gas orifice; 8, inlet pipe; 9, bottom gas jet tray; 91, bottom gas orifice; 10, support ring.
Embodiment
Below with reference to Figure of description and specific embodiment, the present invention is described in further details.
Fig. 1 to Fig. 5 shows a kind of embodiment of the present invention for the heating unit in MOCVD reactor, comprise slide glass dish 1, thermal stabilization shield plate 2 and support baseboard 3, three encloses and forms heating bore 4, support baseboard 3 is provided with multiple pillar stiffener 31 being positioned at heating bore 4, heating bore 4 from bottom to top uniform intervals is provided with polylith and is placed on shielding laminate 5 on pillar stiffener 31, pillar stiffener 31 top is equiped with top gas jet tray 6, top gas jet tray 6 is equiped with heating component 7, support baseboard 3 is equipped with the inlet pipe 8 communicated with top gas jet tray 6, support baseboard 3 is also equiped with the bottom gas jet tray 9 communicated with heating bore 4.In this structure, shielding gas is from the outside inside entering this heating unit through pipeline of reaction chamber, and part shielding gas enters heating bore 4 by bottom gas jet tray 9, makes heating bore 4 form a kind of protective atmosphere; Another part shielding gas sprays to heating component 7 by top gas jet tray 6, forms protective atmosphere to heating component 7.Above-mentioned protective atmosphere not only defines malleation at heating bore 4; impel the gas of heating unit outside can not flow to heating bore 4; and another part shielding gas directly sprays to heating component 7; make to form shielding gas atmosphere all the time around near heating component 7; avoid the impact of heating component 7 by reaction chamber internal-response gas; extend the work-ing life of heating component 7, it be simple and compact for structure, use reliable and stable.
In the present embodiment, it is the upper plate 61 and lower plate 62 that dock up and down that top gas jet tray 6 comprises, and form air cavity 63 between upper plate 61 and lower plate 62, inlet pipe 8 communicates with air cavity 63, upper plate 61 offers multiple tops gas orifice 611, heating component 7 is installed on upper plate 61.In this structure, shielding gas directly enters air cavity 63 through inlet pipe 8, then sprays to the heating component 7 on its top from top gas orifice 611, makes to form shielding gas atmosphere all the time around near heating component 7, substantially increases protected effect.
In the present embodiment, heating component 7 comprises heating element 71, supporting wire 72 and base 73, and base 73 is installed on upper plate 61, and supporting wire 72 is installed on base 73, and heating element 71 is installed on supporting wire 72.In this structure, the below of heating element 71 is upper plate 61, and heating element 71 relies on supporting wire 72 and base 73 to be distributed on upper plate 61, and it is simple and practical.
In the present embodiment, base 73 offers the base gas orifice 731 communicated with air cavity 63.This base gas orifice 731 can make a part of shielding gas in air cavity 63 directly spray to supporting wire 72, further increases protected effect.
In the present embodiment, bottom gas jet tray 9 offers multiple bottom gas orifice 91 communicated with heating bore 4.Bottom this, gas orifice 91 can make outer protection gas spray to heating bore 4, makes whole heating bore 4 form protective atmosphere.
In the present embodiment, support baseboard 3 offers the gas docking port 32 communicated with bottom gas orifice 91.This gas docking port 32 is convenient to and outer protection gas pipeline rapid abutting joint, improves the accessibility of use.
In the present embodiment, bottom gas jet tray 9 and gas docking port 32 are all arranged on the mid-way of support baseboard 3.Such setting, make shielding gas can arrive heating bore 4 evenly and rapidly everywhere, it optimizes topology layout.
In the present embodiment, be provided with support ring 10 between support baseboard 3 and the shielding laminate 5 above it and between each adjacent shielding laminate 5, each support ring 10 is set on pillar stiffener 31.This support ring 10 is mainly used for separating and supports each shielding laminate 5, ensures that the spacing one between each shielding laminate 5 shows raising shield effectiveness.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, when not departing from technical solution of the present invention scope, can utilize the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or being revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to the technology of the present invention essence to any simple modification made for any of the above embodiments, equivalent variations and modification, all should drop in the scope of technical solution of the present invention protection.
Claims (9)
1. one kind for the heating unit in MOCVD reactor, comprise slide glass dish (1), thermal stabilization shield plate (2) and support baseboard (3), three encloses and forms heating bore (4), it is characterized in that: described support baseboard (3) is provided with multiple pillar stiffener (31) being positioned at heating bore (4), described heating bore (4) from bottom to top uniform intervals is provided with polylith and is placed on shielding laminate (5) on described pillar stiffener (31), described pillar stiffener (31) top is equiped with top gas jet tray (6), described top gas jet tray (6) is equiped with heating component (7), support baseboard (3) is equipped with the inlet pipe (8) communicated with top gas jet tray (6), described support baseboard (3) is also equiped with the bottom gas jet tray (9) communicated with heating bore (4).
2. according to claim 1 for the heating unit in MOCVD reactor, it is characterized in that: it is the upper plate (61) and lower plate (62) that dock up and down that described top gas jet tray (6) comprises, air cavity (63) is formed between described upper plate (61) and lower plate (62), described inlet pipe (8) communicates with air cavity (63), described upper plate (61) offers multiple tops gas orifice (611), described heating component (7) is installed on upper plate (61).
3. according to claim 2 for the heating unit in MOCVD reactor, it is characterized in that: described heating component (7) comprises heating element (71), supporting wire (72) and base (73), described base (73) is installed on upper plate (61), described supporting wire (72) is installed on base (73), and described heating element (71) is installed on supporting wire (72).
4. according to claim 3 for the heating unit in MOCVD reactor, it is characterized in that: described base (73) offers the base gas orifice (731) communicated with air cavity (63).
5. according to any one of claim 1 to 4 for the heating unit in MOCVD reactor, it is characterized in that: described bottom gas jet tray (9) offers multiple bottom gas orifice (91) communicated with heating bore (4).
6. according to claim 5 for the heating unit in MOCVD reactor, it is characterized in that: described support baseboard (3) offers the gas docking port (32) communicated with bottom gas orifice (91).
7. according to claim 6 for the heating unit in MOCVD reactor, it is characterized in that: described bottom gas jet tray (9) and gas docking port (32) are all arranged on the mid-way of support baseboard (3).
8. according to any one of claim 1 to 4 for the heating unit in MOCVD reactor, it is characterized in that: be provided with support ring (10) between described support baseboard (3) and the shielding laminate (5) above it and between each adjacent shielding laminate (5), each described support ring (10) is set on pillar stiffener (31).
9. according to claim 7 for the heating unit in MOCVD reactor, it is characterized in that: be provided with support ring (10) between described support baseboard (3) and the shielding laminate (5) above it and between each adjacent shielding laminate (5), each described support ring (10) is set on pillar stiffener (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510857500.1A CN105420693B (en) | 2015-11-30 | 2015-11-30 | For the heating unit in MOCVD reactors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510857500.1A CN105420693B (en) | 2015-11-30 | 2015-11-30 | For the heating unit in MOCVD reactors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105420693A true CN105420693A (en) | 2016-03-23 |
| CN105420693B CN105420693B (en) | 2018-05-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510857500.1A Active CN105420693B (en) | 2015-11-30 | 2015-11-30 | For the heating unit in MOCVD reactors |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862013A (en) * | 2016-06-17 | 2016-08-17 | 南京大学 | High-temperature heating device applied to miniature MOCVD system |
| CN106119811A (en) * | 2016-08-30 | 2016-11-16 | 湖南玉丰真空科学技术有限公司 | A kind of substrate warm table of vacuum equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100317197A1 (en) * | 2009-06-10 | 2010-12-16 | Novellus Systems, Inc. | Heat Shield for Heater in Semiconductor Processing Apparatus |
| CN102839358A (en) * | 2011-06-20 | 2012-12-26 | 上海永胜半导体设备有限公司 | Hot purging structure of metal organic chemical vapor deposition device |
| CN103526186A (en) * | 2013-07-31 | 2014-01-22 | 中国电子科技集团公司第四十八研究所 | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor |
-
2015
- 2015-11-30 CN CN201510857500.1A patent/CN105420693B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100317197A1 (en) * | 2009-06-10 | 2010-12-16 | Novellus Systems, Inc. | Heat Shield for Heater in Semiconductor Processing Apparatus |
| CN102839358A (en) * | 2011-06-20 | 2012-12-26 | 上海永胜半导体设备有限公司 | Hot purging structure of metal organic chemical vapor deposition device |
| CN103526186A (en) * | 2013-07-31 | 2014-01-22 | 中国电子科技集团公司第四十八研究所 | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862013A (en) * | 2016-06-17 | 2016-08-17 | 南京大学 | High-temperature heating device applied to miniature MOCVD system |
| CN105862013B (en) * | 2016-06-17 | 2018-07-06 | 南京大学 | A kind of high-temperature heating equipment applied to small-sized MOCVD systems |
| CN106119811A (en) * | 2016-08-30 | 2016-11-16 | 湖南玉丰真空科学技术有限公司 | A kind of substrate warm table of vacuum equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105420693B (en) | 2018-05-15 |
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