CN105420693B - For the heating unit in MOCVD reactors - Google Patents
For the heating unit in MOCVD reactors Download PDFInfo
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- CN105420693B CN105420693B CN201510857500.1A CN201510857500A CN105420693B CN 105420693 B CN105420693 B CN 105420693B CN 201510857500 A CN201510857500 A CN 201510857500A CN 105420693 B CN105420693 B CN 105420693B
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- heating
- gas jet
- support
- jet tray
- heating unit
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Solid Materials (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The invention discloses a kind of heating unit being used in MOCVD reactors, including slide glass dish, heat screen shield plate and support baseboard, three is enclosed heating bore, support baseboard is equipped with multiple support columns positioned at heating bore, uniform intervals are equipped with the shielding laminate that polylith is placed on support column to heating bore from bottom to top, top gas jet tray is equiped with the top of support column, heating component is equiped with top gas jet tray, the air inlet pipe communicated with top gas jet tray is equipped with support baseboard, the bottom gas jet tray communicated with heating bore is also equiped with support baseboard.The heating unit have the advantages that simple and compact, using it is reliable and stable, heating component service life can be extended.
Description
Technical field
The invention mainly relates to the heating technique in MOCVD device, more particularly to it is a kind of being used in MOCVD reactors plus
Thermal.
Background technology
MOCVD（Metal Organic Chemical Vapor Deposition）Equipment, i.e. metal organic-matter chemical gas
Phase depositing device, it especially has the function that irreplaceability in semiconductor industry in LED industry, is particularly critical set
It is standby.The equipment integrates each subjects such as Fluid Mechanics Computation, heating power conduction, system integration control, compound growth, is a kind of
The equipment of high-tech, new technology high concentration；It is to break through industry development bottleneck, the strategic high-tech for improving level of industry is partly led
Body is equipped.
Due to the advantage that MOCVD is prominent in terms of Semiconductor Film Growth, MOCVD is in ferroelectric thin film, brightness molybdenum material at present
Growth fermentation also illustrates good application prospect, but there are oxygen in the growing environment of ferroelectric thin film or brightness molybdenum material
The property changed gas such as oxygen, hydrogen sulfide gas occur that the active sulfur for having corrosiveness to heater is former in technical process
Son, so as to produce corrosion to the component inside reative cell.The temperature of heater is highest in whole reative cell, so its
It is also more sensitive to oxidizing gas or active sulphur atom.Therefore, heater is also very easy to be corroded, and causes heater
Surface topography produces change, so as to influence the performance of heater, and then causes to react indoor temperature uniformity decline, causes whole
The reduction of a equipment performance.
In order to solve influence of the reative cell internal atmosphere to heater, a kind of current method generally used is by protectiveness
Gas is passed into the region where heater, to protect heater from the influence in reative cell to heater harmful substance.But
It is that the protective gas for being passed into heater area at present is usually the bottom section that a tracheae is passed into heater, protection
Property gas gas come out from tracheae after by spreading form the atmosphere of protection heater, therefore protecting effect is unsatisfactory, adds
The service life of hot device is shorter.
The content of the invention
The technical problem to be solved in the present invention is overcome the deficiencies of the prior art and provide a kind of simple and compact, using stabilization
Reliably, the heating unit being used in MOCVD reactors of heating component service life can be extended.
In order to solve the above technical problems, the present invention uses following technical scheme：
A kind of heating unit being used in MOCVD reactors, including slide glass dish, heat screen shield plate and support baseboard, three
Heating bore is enclosed, the support baseboard is equipped with multiple support columns positioned at heating bore, and the heating bore is under
Upward uniform intervals are equipped with the shielding laminate that polylith is placed on the support column, and top gas spray is equiped with the top of the support column
Plate is penetrated, heating component is equiped with the top gas jet tray, is equipped with support baseboard and is communicated with top gas jet tray
Air inlet pipe, be also equiped with the bottom gas jet tray communicated with heating bore on the support baseboard.
Further as above-mentioned technical proposal is improved：
The top gas jet tray includes, in the upper plate and lower plate docked up and down, gas being formed between the upper plate and lower plate
Chamber, the air inlet pipe are communicated with air cavity, and multiple top fumaroles are offered on the upper plate, and the heating component is installed in upper plate
On.
The heating component includes heater, supporting wire and base, and the base is installed on upper plate, the supporting wire dress
It is located on base, the heater is installed on supporting wire.
The base fumarole communicated with air cavity is offered on the base.
Multiple bottom fumaroles communicated with heating bore are offered on the bottom gas jet tray.
The gas communicated with bottom fumarole is offered on the support baseboard to interface.
Bottom gas jet tray and gas the docking mouth is arranged at the centre position of support baseboard.
Support ring is equipped between the support baseboard and shielding laminate above it and between each adjacent shielding laminate,
Each support ring is set on support column.
Compared with prior art, the advantage of the invention is that：
The heating unit being used in MOCVD reactors of the present invention, support baseboard are equipped with multiple positioned at heating bore
Support column, uniform intervals are equipped with the shielding laminate that polylith is placed on support column to heating bore from bottom to top, are installed at the top of support column
There is top gas jet tray, heating component is equiped with top gas jet tray, be equipped with support baseboard and sprayed with top gas
The air inlet pipe that plate communicates is penetrated, the bottom gas jet tray communicated with heating bore is also equiped with support baseboard.In the structure, protect
Protect gas outside reative cell through pipeline enter the heating unit inside, part protective gas by bottom gas jet tray into
Enter heating bore, heating bore is formed a kind of protective atmosphere；Another part protective gas is sprayed to by top gas jet tray
Heating component, protective atmosphere is formed to heating component.Above-mentioned protective atmosphere not only forms positive pressure in heating bore, promotes to heat
Gas outside device will not be flowed to heating bore, and another part protective gas directly sprays to heating component, makes heating
Component consistently forms protective gas atmosphere around nearby, and avoid heating component is influenced by reative cell internal-response gas, is prolonged
The service life of heating component is grown, its is simple and compact for structure, using reliable and stable.
Brief description of the drawings
Fig. 1 is the structure diagram for the heating unit that the present invention is used in MOCVD reactors.
Fig. 2 is the partial structurtes enlarged structure schematic diagram for the heating unit that the present invention is used in MOCVD reactors.
Fig. 3 is the structure diagram that the present invention is used for support baseboard in the heating unit in MOCVD reactors.
Fig. 4 is the structure diagram that the present invention is used for bottom gas injection plate in the heating unit in MOCVD reactors.
Fig. 5 is the partial structurtes enlarged structure schematic diagram for the heating unit that the present invention is used in MOCVD reactors（Show depending on going out
Heating component）.
Each label represents in figure：
1st, slide glass dish；2nd, heat screen shield plate；3rd, support baseboard；31st, support column；32nd, gas is to interface；4th, heating bore；
5th, laminate is shielded；6th, top gas jet tray；61st, upper plate；611st, top fumarole；62nd, lower plate；63rd, air cavity；7th, heating group
Part；71st, heater；72nd, supporting wire；73rd, base；731st, base fumarole；8th, air inlet pipe；9th, bottom gas jet tray；91st, bottom
Portion's fumarole；10th, support ring.
Embodiment
The present invention is described in further details below with reference to Figure of description and specific embodiment.
Fig. 1 to Fig. 5 shows a kind of embodiment for the heating unit that the present invention is used in MOCVD reactors, including slide glass
Disk 1, heat screen shield plate 2 and support baseboard 3, three are enclosed heating bore 4, and support baseboard 3 is equipped with multiple positioned at heating
The support column 31 of inner cavity 4, uniform intervals are equipped with the shielding laminate 5 that polylith is placed on support column 31 to heating bore 4 from bottom to top, branch
The top of dagger 31 is equiped with top gas jet tray 6, is equiped with heating component 7 on top gas jet tray 6, on support baseboard 3
The air inlet pipe 8 communicated with top gas jet tray 6 is equipped with, the bottom communicated with heating bore 4 is also equiped with support baseboard 3
Gas injection plate 9.In the structure, protective gas enters the inside of the heating unit outside reative cell through pipeline, and part is protected
Gas enters heating bore 4 by bottom gas jet tray 9, heating bore 4 is formed a kind of protective atmosphere；Another part is protected
Gas sprays to heating component 7 by top gas jet tray 6, and protective atmosphere is formed to heating component 7.Above-mentioned protective atmosphere is not only
Positive pressure is formd in heating bore 4, promotes the gas outside heating unit not flowed to heating bore 4, and another part
Protective gas directly sprays to heating component 7, heating component 7 is consistently formed protective gas atmosphere around nearby, avoids heating
Component 7 is influenced by reative cell internal-response gas, extends the service life of heating component 7, its simple and compact for structure, use
It is reliable and stable.
In the present embodiment, top gas jet tray 6 is included in the upper plate 61 and lower plate 62, upper plate 61 and lower plate docked up and down
Air cavity 63 is formed between 62, air inlet pipe 8 is communicated with air cavity 63, and multiple top fumaroles 611, heating component are offered on upper plate 61
7 are installed on upper plate 61.In the structure, protective gas is directly entered air cavity 63 through air inlet pipe 8, then is sprayed from top fumarole 611
To the heating component 7 of its upper part, heating component 7 is consistently formed protective gas atmosphere around nearby, substantially increase protection effect
Fruit.
In the present embodiment, heating component 7 includes heater 71, supporting wire 72 and base 73, and base 73 is installed in upper plate 61
On, supporting wire 72 is installed on base 73, and heater 71 is installed on supporting wire 72.In the structure, the lower section of heater 71 is
Upper plate 61, heater 71 are distributed on upper plate 61 by supporting wire 72 and base 73, its is simple and practical in structure.
In the present embodiment, the base fumarole 731 communicated with air cavity 63 is offered on base 73.The base fumarole 731
A part of protective gas in air cavity 63 can be made directly to spray to supporting wire 72, further increase protecting effect.
In the present embodiment, multiple bottom fumaroles 91 communicated with heating bore 4 are offered on bottom gas jet tray 9.
The bottom fumarole 91 can make outer protection gas spray to heating bore 4, whole heating bore 4 is formed protective atmosphere.
In the present embodiment, offered on support baseboard 3 with the gas that bottom fumarole 91 communicates to interface 32.The gas pair
Interface 32 be easy to outer protection gas pipeline rapid abutting joint, improve the convenience used.
In the present embodiment, bottom gas jet tray 9 and gas dock the centre position that mouth 32 is arranged at support baseboard 3.
In this way, enabling protective gas evenly and rapidly to reach heating bore 4 everywhere, it optimizes topology layout.
In the present embodiment, support baseboard 3 and above it shielding laminate 5 between and each adjacent shielding laminate 5 between
Equipped with support ring 10, each support ring 10 is set on support column 31.The support ring 10 is mainly used for separating and supports each shielding
Laminate 5, ensures that the spacing one between each shielding laminate 5 shows raising shield effectiveness.
Although the present invention is disclosed as above with preferred embodiment, but is not limited to the present invention.It is any to be familiar with ability
The technical staff in domain, in the case where not departing from technical solution of the present invention scope, all using the technology contents pair of the disclosure above
Technical solution of the present invention makes many possible changes and modifications, or is revised as the equivalent embodiment of equivalent variations.Therefore, it is every
Without departing from the content of technical solution of the present invention, according to the technology of the present invention essence to any simple modification made for any of the above embodiments,
Equivalent variations and modification, should all fall in the range of technical solution of the present invention protection.
Claims (8)
1. a kind of heating unit being used in MOCVD reactors, including slide glass dish（1）, heat screen shield plate（2）And support baseboard
（3）, three is enclosed heating bore（4）, it is characterised in that：The support baseboard（3）It is located at heating bore equipped with multiple
（4）Support column（31）, the heating bore（4）Uniform intervals are placed on the support column equipped with polylith from bottom to top（31）On
Shield laminate（5）, the support column（31）Top is equiped with top gas jet tray（6）, the top gas jet tray（6）On
It is equiped with heating component（7）, support baseboard（3）On be equipped with and top gas jet tray（6）The air inlet pipe communicated（8）, it is described
Support baseboard（3）On be also equiped with and heating bore（4）The bottom gas jet tray communicated（9）, the top gas jet tray
（6）Including in the upper plate docked up and down（61）And lower plate（62）, the upper plate（61）And lower plate（62）Between form air cavity（63）,
The air inlet pipe（8）With air cavity（63）Communicate, the upper plate（61）On offer multiple top fumaroles（611）, the heating
Component（7）It is installed in upper plate（61）On.
2. the heating unit according to claim 1 being used in MOCVD reactors, it is characterised in that：The heating component
（7）Including heater（71）, supporting wire（72）And base（73）, the base（73）It is installed in upper plate（61）On, the support
Silk（72）It is installed in base（73）On, the heater（71）It is installed in supporting wire（72）On.
3. the heating unit according to claim 2 being used in MOCVD reactors, it is characterised in that：The base（73）
On offer and air cavity（63）The base fumarole communicated（731）.
4. the heating unit according to any one of claim 1 to 3 being used in MOCVD reactors, it is characterised in that：Institute
State bottom gas jet tray（9）On offer multiple and heating bore（4）The bottom fumarole communicated（91）.
5. the heating unit according to claim 4 being used in MOCVD reactors, it is characterised in that：The support baseboard
（3）On offer and bottom fumarole（91）The gas communicated is to interface（32）.
6. the heating unit according to claim 5 being used in MOCVD reactors, it is characterised in that：The bottom gas
Jet tray（9）Mouth is docked with gas（32）It is arranged at support baseboard（3）Centre position.
7. the heating unit according to any one of claim 1 to 3 being used in MOCVD reactors, it is characterised in that：Institute
State support baseboard（3）With the shielding laminate above it（5）Between and each adjacent shielding laminate（5）Between be equipped with support ring
（10）, each support ring（10）It is set in support column（31）On.
8. the heating unit according to claim 6 being used in MOCVD reactors, it is characterised in that：The support baseboard
（3）With the shielding laminate above it（5）Between and each adjacent shielding laminate（5）Between be equipped with support ring（10）, it is each described
Support ring（10）It is set in support column（31）On.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510857500.1A CN105420693B (en) | 2015-11-30 | 2015-11-30 | For the heating unit in MOCVD reactors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510857500.1A CN105420693B (en) | 2015-11-30 | 2015-11-30 | For the heating unit in MOCVD reactors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105420693A CN105420693A (en) | 2016-03-23 |
| CN105420693B true CN105420693B (en) | 2018-05-15 |
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ID=55499220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510857500.1A Active CN105420693B (en) | 2015-11-30 | 2015-11-30 | For the heating unit in MOCVD reactors |
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| Country | Link |
|---|---|
| CN (1) | CN105420693B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862013B (en) * | 2016-06-17 | 2018-07-06 | 南京大学 | A kind of high-temperature heating equipment applied to small-sized MOCVD systems |
| CN106119811B (en) * | 2016-08-30 | 2018-10-12 | 湖南玉丰真空科学技术有限公司 | A kind of substrate warm table of vacuum equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839358A (en) * | 2011-06-20 | 2012-12-26 | 上海永胜半导体设备有限公司 | Hot purging structure of metal organic chemical vapor deposition device |
| CN103526186A (en) * | 2013-07-31 | 2014-01-22 | 中国电子科技集团公司第四十八研究所 | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8753447B2 (en) * | 2009-06-10 | 2014-06-17 | Novellus Systems, Inc. | Heat shield for heater in semiconductor processing apparatus |
-
2015
- 2015-11-30 CN CN201510857500.1A patent/CN105420693B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102839358A (en) * | 2011-06-20 | 2012-12-26 | 上海永胜半导体设备有限公司 | Hot purging structure of metal organic chemical vapor deposition device |
| CN103526186A (en) * | 2013-07-31 | 2014-01-22 | 中国电子科技集团公司第四十八研究所 | Wafer loading disc for MOCVD (metal organic chemical vapor deposition) reactor and MOCVD reactor |
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| Publication number | Publication date |
|---|---|
| CN105420693A (en) | 2016-03-23 |
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