CN105419236A - Epoxy molding compound for encapsulating semiconductor element - Google Patents
Epoxy molding compound for encapsulating semiconductor element Download PDFInfo
- Publication number
- CN105419236A CN105419236A CN201510952561.6A CN201510952561A CN105419236A CN 105419236 A CN105419236 A CN 105419236A CN 201510952561 A CN201510952561 A CN 201510952561A CN 105419236 A CN105419236 A CN 105419236A
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- epoxy
- epoxy molding
- molding plastic
- resin
- epoxy resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
- C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
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- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
The invention discloses an epoxy molding compound for encapsulating a semiconductor element. The epoxy molding compound is prepared from the following components in percentage by weight: 4.7 to 7.7 percent of epoxy resin, 3.9 to 6.9 percent of phenol-formaldehyde resin, 0.1 to 0.5 percent of curing accelerator, 80.0 to 86.0 percent of inorganic fillers and 0.1 to 10 percent of porous micro spheres, wherein the d50 particle diameter of the porous micro spheres is 1 to 20 mum, the pore diameter of a pore channel of the porous micro spheres is 10 to 800 nm, and the BET specific surface area of the porous micro spheres is 300 to 1000 m<2>/g. The epoxy molding compound disclosed by the invention has the advantages that the epoxy molding compound obtained through the invention is used as an encapsulating material, the epoxy molding compound has the characteristics of excellent fluidity and excellent weld cracking resistance when being applied to production of semiconductor devices, and the obtained semiconductor devices have the advantages of excellent formability and excellent weld reflowing resistance.
Description
Technical field
The present invention relates to epoxy molding plastic field, particularly a kind of epoxy molding plastic for packaging semiconductor.
Background technology
In the market trends of electronic machine miniaturization in recent years, lightweight, high performance, semiconductor element highly integrated at development, in addition, in the surface mounting promoting semiconductor device, also more and more stricter to the requirement of semi-conductor epoxy moulding compound for packaging.Along with miniaturization, the slimming of semiconductor device, require to become increasingly stringent to semi-conductor sealing composition epoxy resin.The miniaturization of semiconducter device, lightweight, integratedly require that epoxy molding plastic has higher mobility, otherwise easily produce pore, defect in encapsulation process; Semiconducter device is when the surface reflow temperature of 260 DEG C carries out installation process, easy generation interface peel or the semiconductor device of the cured article of semiconductor element or lead frame and epoxy molding plastic crack, considerably increase the unfavorable condition that semiconductor device reliability is impaired, therefore require that epoxy molding plastic possesses higher proper alignment reflow.Consider based on above-mentioned background, the latest developments direction of epoxy molding plastic adopts more low viscous resin, coordinate more mineral filler to reach the reflow object of high workability, high proper alignment.Low viscosity during in order to reduce shaping and keep mobility, there will be a known the method for the low epoxy resin of employing melt viscosity and resol, in addition, in order to improve the use level of mineral filler, there will be a known and adopt silane coupling agent to carry out surface-treated method to mineral filler.Aforesaid method obviously can improve the soldering resistance of epoxy molding plastic, reduce cracking, but problem is, along with the increase of mineral filler amount, mobility shortens, and causes easily producing pore and defect in encapsulation process, simultaneously, the production of epoxy molding plastic also becomes difficulty, easily occurs dead material, has a strong impact on production efficiency.Therefore, only adopt these methods, high workability and high soldering resistance, resistance to cracking cannot be reached simultaneously.
Summary of the invention
The object of this invention is to provide a kind of epoxy molding plastic for packaging semiconductor, to overcome the deficiency mentioned in above-mentioned prior art.
For achieving the above object, the present invention is achieved through the following technical solutions:
For an epoxy molding plastic for packaging semiconductor, comprise component:
Epoxy resin 4.7wt-7.7wt%
Resol 3.9wt-6.9wt%
Curing catalyst 0.1wt-0.5wt%
Mineral filler 80.0%-86.0%
Porous microsphere 0.1wt%-10wt%,
Wherein, the d50 particle diameter of above-mentioned porous microsphere is 1-20 μm, the aperture in porous microsphere duct is 10-800nm, the BET specific surface area of porous microsphere is 300-1000m
2/ g.
Preferably, described epoxy resin comprises at least one in the group being selected from and being made up of flowing epoxy: o-cresol formaldehyde epoxy resin, biphenyl type epoxy resin; Described resol comprises at least one in the group being selected from and being made up of following resol: phenol aralkyl type resin, the novolac resin with biphenylene skeleton structure.
Preferably, the preferred o-cresol formaldehyde epoxy resin of described epoxy resin, described resol preferably has the phenol aralkyl type resin of biphenylene skeleton structure.
Preferably, the preferred biphenyl type epoxy resin of described epoxy resin, the preferred novolac resin of described resol.
Preferably, described porous microsphere refers to one or more in porous silica microballoon, porous alumina microballoon, porous titania microbead.
Preferably, described porous microsphere, its duct is one or more in unordered duct, parallel channels, vertical channel, 3D duct.
Preferably, described porous microsphere refers to the porous microsphere of channel surfaces through amino, sulfydryl, any one or multiple base group modification in epoxy group(ing).
Be not particularly limited the mineral filler used in the present invention, it can be selected from ball-shaped silicon micro powder, silicon metal micro mist, molten silicon micro mist, aluminum oxide, aluminium hydroxide, zinc borate etc., in order to reach excellent mobility, particularly preferably ball-shaped silicon micro powder.
Be not particularly limited the curing catalyst used in the present invention, as long as they promote the reaction between epoxy group(ing) and phenolic hydroxyl group.The example of promotor be organophosphorus as triphenylphosphine, imidazolium compounds is as glyoxal ethyline and 2-phenylimidazole, and diazacyclo alkene is as 1,8-diazabicyclo (5,4,0) hendecene-7 and derivative thereof, and these can use individually or in conjunction with two or more.
In epoxy molding plastic of the present invention, using epoxy resin, resol, mineral filler, curing catalyst, porous microsphere as neccessary composition, in addition, also the fire retardants such as pigment, zinc borate such as silane coupling agent, wax class releasing agent, carbon black can suitably be coordinated as required.
Epoxy molding plastic of the present invention is by using high mixer Homogeneous phase mixing all substances fully, and then by the melt kneading such as twin-roll machine or kneader, the mixture after kneading is through cooling, pulverizing, be obtained by mixing.
Epoxy molding plastic of the present invention encapsulates various semiconductor element to produce semiconducter device by methods such as die casting, compression moulding and injection mouldings.
Beneficial effect of the present invention is: by the epoxy molding plastic of gained of the present invention as packaged material, when being applied to semiconducter device and producing, have mobility and anti-weld cracking excellent feature, the semiconducter device obtained has excellent formability and the reflow advantage of proper alignment.
Embodiment
To be described in more detail the present invention by embodiment below, but the present invention is not limited only to the embodiment that is made up of following experimental example.
The epoxy resin, resol and the porous microsphere that comprise of all embodiments below, is expressed as follows:
E-1: ortho-cresol type epoxy resin (softening temperature 102 DEG C)
E-2: biphenyl type epoxy resin (fusing point 93 DEG C)
P-1: the phenol aralkyl type resin (softening temperature 63 DEG C) with biphenylene skeleton structure
P-2: novolac resin (softening temperature 76 DEG C)
W-1: porous silica microballoon (d50=5 μm)
W-2: porous alumina microballoon (d50=11 μm)
W-3: channel surfaces is through amido modified porous silica microballoon (d50=6 μm)
W-4: porous titania microbead (d50=15 μm)
Embodiment 1
Embodiment 1 comprises following component:
E-1:6.0 weight part
P-1:5.1 weight part
W-1:4.5 weight part
Ball-shaped silicon micro powder: 83.0 weight parts
Glyoxal ethyline: 0.2 weight part
Zinc borate: 0.4 weight part
Silane coupling agent: 0.3 weight part
Wax class releasing agent: 0.2 weight part
Carbon black: 0.3 weight part
Above-mentioned substance is at room temperature even in high-speed mixer and mixing, and then carry out melting mixing through twin screw extruder at 80-100 DEG C, cooling, then pulverizes, after mixing, obtain epoxy molding plastic.According to following method evaluation epoxy molding plastic.Evaluation result is in table 1.
Spiral flow length: by the test of EMMI-1-66 helicoidal flow metal die on transfer moIding machine, test condition is: temperature: 175 DEG C, pressure: 7.0MPa, the dwell time: 120s.Spiral flow length is the parameter of test and appraisal mobility, and the larger expression mobility of this value is better, and unit is cm.
Proper alignment is reflow: adopt low pressure transfer moIding machine, make the pQFP lead frame (copper) of the 14cm × 20cm of its 7cm × 7cm that bonds × 0.5cm silicon × 2.7cm80 size shaping, condition of molding: temperature 175 DEG C, injection time: 10s, set time: 90s, injection pressure: 9.8MPa.Solidify after 8 hours at 175 DEG C, under 85 DEG C and 85% humidity condition, humidifying 168 hours, is then refluxed by IR, and top temperature is 260 DEG C, continues through three times (three times, carry out 10s under 225 DEG C or higher temperature) at every turn.Then, ultrasonic Flaw Detection device is utilized to detect internal crack and delamination.Evaluate according to 10 packaged piece chips hierarchy numbers and internal crack number.
Embodiment 2-10 and comparing embodiment 11-13
Embodiment 2-10 and comparing embodiment 11-13, according to the component included by table 1 and content, prepares epoxy molding plastic by the same procedure with preparation embodiment 1, and carries out evaluating according to the evaluation method identical with embodiment 1.Result is as shown in table 1.
Table 1
| 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | |
| E-1 | 6.0 | 6.0 | 6.0 | 6.0 | 7.7 | 4.7 | 2.9 | 0 | 0 | 6.2 | 6.0 | 8.5 | 6.2 |
| E-2 | 0 | 0 | 0 | 0 | 0 | 0 | 2.8 | 5.7 | 6.1 | 0 | 0 | 0 | 0 |
| P-1 | 5.1 | 5.1 | 5.1 | 5.1 | 6.9 | 3.9 | 5.4 | 5.4 | 0 | 0 | 5.1 | 7.1 | 0 |
| P-2 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 5.0 | 4.9 | 0 | 0 | 4.9 |
| W-1 | 4.5 | 0 | 0 | 0 | 1.0 | 7.0 | 4.5 | 4.5 | 4.5 | 0 | 0 | 0 | 0 |
| W-2 | 0 | 4.5 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| W-3 | 0 | 0 | 4.5 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| W-4 | 0 | 0 | 0 | 4.5 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
| Ball-shaped silicon micro powder | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 83.0 | 87.5 | 83 | 87.5 |
| Glyoxal ethyline | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Zinc borate | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 | 0.4 |
| Silane coupling agent | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 |
| Wax class releasing agent | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 | 0.2 |
| Carbon black | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 |
| Spiral flow length cm | 97 | 96 | 108 | 90 | 106 | 92 | 105 | 116 | 91 | 75 | 80 | 95 | 65 |
| The reflow n/10 of proper alignment | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 3 | 4 | 8 |
Epoxy molding plastic for packaging semiconductor of the present invention, while the excellent properties of performance is to ensure high filling, mobility is high, stress is little, and proper alignment is reflow good.When using this epoxy molding plastic to carry out semiconductor component packing, plasticity performance is excellent, also very excellent with the adhesivity of lead frame, can obtain the semiconducter device that the reflow performance of proper alignment is excellent.Therefore, this epoxy molding plastic can be advantageously used in semiconductor component packing.
Claims (7)
1. for an epoxy molding plastic for packaging semiconductor, it is characterized in that: comprise component:
Epoxy resin 4.7wt-7.7wt%
Resol 3.9wt-6.9wt%
Curing catalyst 0.1wt-0.5wt%
Mineral filler 80.0%-86.0%
Porous microsphere 0.1wt%-10wt%,
Wherein, the d50 particle diameter of above-mentioned porous microsphere is 1-20 μm, the aperture in porous microsphere duct is 10-800nm, the BET specific surface area of porous microsphere is 300-1000m
2/ g.
2. the epoxy molding plastic for packaging semiconductor according to claim 1, is characterized in that: described epoxy resin comprises at least one in the group being selected from and being made up of flowing epoxy: o-cresol formaldehyde epoxy resin, biphenyl type epoxy resin; Described resol comprises at least one in the group being selected from and being made up of following resol: phenol aralkyl type resin, the novolac resin with biphenylene skeleton structure.
3. the epoxy molding plastic for packaging semiconductor according to claim 2, is characterized in that: the preferred o-cresol formaldehyde epoxy resin of described epoxy resin, and described resol preferably has the phenol aralkyl type resin of biphenylene skeleton structure.
4. the epoxy molding plastic for packaging semiconductor according to claim 2, is characterized in that: the preferred biphenyl type epoxy resin of described epoxy resin, the preferred novolac resin of described resol.
5. the epoxy molding plastic for packaging semiconductor according to claim 1, is characterized in that: described porous microsphere refer in porous silica microballoon, porous alumina microballoon, porous titania microbead one or more.
6. the epoxy molding plastic for packaging semiconductor according to claim 5, is characterized in that: described porous microsphere, and its duct is one or more in unordered duct, parallel channels, vertical channel, 3D duct.
7. the epoxy molding plastic for packaging semiconductor according to claim 1 or 5 or 6, is characterized in that: described porous microsphere refers to the porous microsphere of channel surfaces through amino, sulfydryl, any one or multiple base group modification in epoxy group(ing).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510952561.6A CN105419236B (en) | 2015-12-18 | 2015-12-18 | A kind of epoxy molding plastic for packaging semiconductor |
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|---|---|---|---|
| CN201510952561.6A CN105419236B (en) | 2015-12-18 | 2015-12-18 | A kind of epoxy molding plastic for packaging semiconductor |
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| CN105419236A true CN105419236A (en) | 2016-03-23 |
| CN105419236B CN105419236B (en) | 2017-11-07 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107614608A (en) * | 2016-01-13 | 2018-01-19 | 株式会社Lg化学 | For semiconductor packages compositions of thermosetting resin and use its prepreg |
| CN107868404A (en) * | 2016-09-23 | 2018-04-03 | 住友电木株式会社 | Compositions of thermosetting resin, resin seal substrate and electronic installation |
| CN116884941A (en) * | 2023-06-19 | 2023-10-13 | 浙江嘉辰半导体有限公司 | Structure for packaging chip and packaging process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316447A (en) * | 2000-04-06 | 2001-10-10 | 日东电工株式会社 | Epoxy resin composition for semi-conductor packaging and semi-conductor device using the composition |
| JP2005089710A (en) * | 2003-09-19 | 2005-04-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2009057393A (en) * | 2007-08-08 | 2009-03-19 | Shin Etsu Chem Co Ltd | Epoxy resin composition having latent curing accelerator and semiconductor device |
-
2015
- 2015-12-18 CN CN201510952561.6A patent/CN105419236B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316447A (en) * | 2000-04-06 | 2001-10-10 | 日东电工株式会社 | Epoxy resin composition for semi-conductor packaging and semi-conductor device using the composition |
| JP2005089710A (en) * | 2003-09-19 | 2005-04-07 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JP2009057393A (en) * | 2007-08-08 | 2009-03-19 | Shin Etsu Chem Co Ltd | Epoxy resin composition having latent curing accelerator and semiconductor device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107614608A (en) * | 2016-01-13 | 2018-01-19 | 株式会社Lg化学 | For semiconductor packages compositions of thermosetting resin and use its prepreg |
| CN107614608B (en) * | 2016-01-13 | 2020-08-28 | 株式会社Lg化学 | Thermosetting resin composition for semiconductor encapsulation and prepreg using same |
| CN107868404A (en) * | 2016-09-23 | 2018-04-03 | 住友电木株式会社 | Compositions of thermosetting resin, resin seal substrate and electronic installation |
| CN116884941A (en) * | 2023-06-19 | 2023-10-13 | 浙江嘉辰半导体有限公司 | Structure for packaging chip and packaging process |
| CN116884941B (en) * | 2023-06-19 | 2024-04-09 | 浙江嘉辰半导体有限公司 | Structure for packaging chip and packaging process |
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| CN105419236B (en) | 2017-11-07 |
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