CN105406819B - The performance test methods of solar cell reverse breakdown - Google Patents
The performance test methods of solar cell reverse breakdown Download PDFInfo
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- CN105406819B CN105406819B CN201510988790.3A CN201510988790A CN105406819B CN 105406819 B CN105406819 B CN 105406819B CN 201510988790 A CN201510988790 A CN 201510988790A CN 105406819 B CN105406819 B CN 105406819B
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 230000015556 catabolic process Effects 0.000 title claims abstract description 21
- 238000011056 performance test Methods 0.000 title claims abstract description 13
- 230000003252 repetitive effect Effects 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 230000003667 anti-reflective effect Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 6
- 230000005611 electricity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
It is as follows the step of this method the invention discloses a kind of performance test methods of solar cell reverse breakdown：(a) the actual current voltage response of solar cell to be measured is obtained；(b) scanning voltage, and certain time are applied on the both positive and negative polarity of solar cell, the negative value in scanning voltage is reverse biased；(c) obtain solar cell and apply the current-voltage characteristic curve after reverse biased, and contrasted with the actual current voltage response obtained in step (a)；(d) repeat step (b) arrives step (c), and in repetitive process again, for last time repetitive process, increase scanning voltage scope or the duration for increasing scanning voltage scope and increase application scanning voltage simultaneously, up to the PN junction breakdown of solar cell in last time repetitive process.The present invention can rapidly and accurately obtain the reverse breakdown characteristics of battery, test the reliability of battery, so as to solve the integrity problem of battery and component from root.
Description
Technical field
The present invention relates to a kind of performance test methods of solar cell reverse breakdown.
Background technology
At present, when one of solar components or a Battery pack are by shading or damage, the battery being affected or battery pack quilt
Compel in reverse bias and power must be consumed, so as to influence assembly reliability.Insulation breakdown is must take into consideration in the semiconductors
Influence to quality of oxide layer, typically have two kinds of method of testings：A kind of is that oxide layer adds the instantaneous exhausted of voltage short circuit immediately
Edge punctures (TZDB), another kind be oxide layer continuously add just produce after appropriate voltage it is short-circuit through when insulation breakdown (TDDB),
But in solar cell test field, go to test reverse breakdown there is presently no special method.
The content of the invention
The technical problems to be solved by the invention are the defects of overcoming prior art, there is provided a kind of solar cell is reversely hit
The performance test methods worn, it can rapidly and accurately obtain the reverse breakdown characteristics of battery, test the reliability of battery, so as to
Solves the integrity problem of battery and component from root.
In order to solve the above-mentioned technical problem, the technical scheme is that：A kind of performance of solar cell reverse breakdown
Method of testing is as follows the step of this method：
(a) the actual current voltage response of solar cell to be measured is obtained；
(b) scanning voltage, and certain time are applied on the both positive and negative polarity of solar cell, the negative value in scanning voltage
For reverse biased；
(c) obtain solar cell and apply the current-voltage characteristic curve after reverse biased, and with obtaining in step (a)
Actual current voltage response is contrasted；
(d) repeat step (b) arrives step (c), and in repetitive process again, for last time repetitive process, increase
Scanning voltage scope or the duration for increasing scanning voltage scope and increase application scanning voltage simultaneously, until last time weight
The PN junction breakdown of solar cell, is finally completed the performance test of solar cell during multiple；Wherein, by increasing scanning electricity
The most lower limit of negative value in pressure value range increases scanning voltage scope.
Further, in described step (c), the light for the solar cell also tested simultaneously after applying a reverse biased
Photoluminescence picture, and observe the number of spot.
Further, in described step (b), during applying scanning voltage, electric current is kept to be set no more than a upper limit
Definite value.
Further, described upper limit set value is 12A.
Further, in the step (b), the scope of scanning voltage is -3V~+0.7V, and is provided with and repeated three times
Journey, scanning voltage scope when repeating for the first time is -4V~+0.7V；Second scanning voltage scope when repeating for -5V~+
0.7V；Scanning voltage scope when third time repeats is -5.7V~+0.7V.
Further, in the step (b), the duration for applying scanning voltage is 1min, application when repeating for the first time
The duration of scanning voltage is 2min；The duration of application scanning voltage during second of repetition is 5min；Third time weight
The duration of application scanning voltage when multiple is 10min, and continues to increase time to PN junction and puncture.
Further, this method is applied to IBC solar cells.
Further, the IBC solar cells include n-type silicon chip, have n+ heavily doped layers and p+ at the back side of n-type silicon chip
Heavily doped layer, and corresponding point contact electrode is drawn on n+ heavily doped layers, p+ heavily doped layers respectively, the front plating of n-type silicon chip
There is antireflective film, the back side of n-type silicon chip is coated with stack membrane, and is passivated n+ heavily doped layers and p+ heavily doped layers simultaneously.
After employing above-mentioned technical proposal, the inventive method can quick and precisely test battery reliability, be solved from root
Determine the integrity problem of battery and component.
Brief description of the drawings
Fig. 1 is the structural representation of the IBC solar cells of the present invention.
Embodiment
In order that present disclosure is easier to be clearly understood, it is right below according to specific embodiment and with reference to accompanying drawing
The present invention is described in further detail.
It is as follows the step of this method as shown in figure 1, a kind of performance test methods of solar cell reverse breakdown：
(a) the actual current voltage response of solar cell to be measured is obtained；
(b) scanning voltage, and certain time are applied on the both positive and negative polarity of solar cell, the negative value in scanning voltage
For reverse biased；
(c) obtain solar cell and apply the current-voltage characteristic curve after reverse biased, and with obtaining in step (a)
Actual current voltage response is contrasted；
(d) repeat step (b) arrives step (c), and in repetitive process again, for last time repetitive process, increase
Scanning voltage scope or the duration for increasing scanning voltage scope and increase application scanning voltage simultaneously, until last time weight
The PN junction breakdown of solar cell, is finally completed the performance test of solar cell during multiple；Wherein, by increasing scanning electricity
The most lower limit of negative value in pressure value range increases scanning voltage scope.
In described step (c), the luminescence generated by light for the solar cell also tested simultaneously after applying a reverse biased
Picture, and observe the number of spot.
In described step (b), during applying scanning voltage, electric current is kept to be no more than a upper limit set value.
Described upper limit set value is 12A.
In the step (b), the scope of scanning voltage is -3V~+0.7V, and is provided with repetitive process three times, first
Scanning voltage scope during secondary repetition is -4V~+0.7V；Scanning voltage scope during second of repetition is -5V~+0.7V；The
Scanning voltage scope when repeating three times is -5.7V~+0.7V.
In the step (b), the duration for applying scanning voltage is 1min, application scanning voltage when repeating for the first time
Duration be 2min；The duration of application scanning voltage during second of repetition is 5min；Applying when third time repeats
The duration for adding scanning voltage is 10min, and continues to increase time to PN junction and puncture.
This method is applied to IBC solar cells, and IBC solar cells include n-type silicon chip 1, at the back side of n-type silicon chip 1
With n+ heavily doped layers 2 and p+ heavily doped layers 3, and draw corresponding point on n+ heavily doped layers 2, p+ heavily doped layers 3 respectively and connect
Touched electrode 23, the front of n-type silicon chip 1 are coated with antireflective film 4, and the back side of n-type silicon chip 1 is coated with stack membrane 5, and it is heavily doped to be passivated n+ simultaneously
Diamicton 2 and p+ heavily doped layers 3.The IBC solar cells are not due to having obvious gully, n+ heavily doped layers and p+ between n+ and p+
Heavily doped layer directly contacts, and the ability of anti-reverse breakdown is far smaller than the common p-type battery of producing line, to the IBC solar cells
Reverse breakdown test is just more strict.
Particular embodiments described above, pair present invention solves the technical problem that, technical scheme and beneficial effect carry out
It is further described, should be understood that the specific embodiment that the foregoing is only the present invention, is not limited to this
Invention, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc., should be included in this hair
Within bright protection domain.
Claims (4)
1. a kind of performance test methods of solar cell reverse breakdown, it is characterised in that as follows the step of this method：
(a) the actual current voltage response of solar cell to be measured is obtained；
(b) scanning voltage, and certain time are applied on the both positive and negative polarity of solar cell, the negative value in scanning voltage is anti-
To bias；
(c) obtain solar cell and apply the current-voltage characteristic curve after reverse biased, and the reality with being obtained in step (a)
Current-voltage characteristic curve is contrasted；
(d) repeat step (b) arrives step (c), and in repetitive process again, for last time repetitive process, increase scanning
Voltage range or the duration for increasing scanning voltage scope and increase application scanning voltage simultaneously, until last time repeated
The PN junction breakdown of solar cell, is finally completed the performance test of solar cell in journey；Wherein, by increasing scanning voltage model
The most lower limit of the negative value in value is enclosed to increase scanning voltage scope；
Wherein, in described step (b), during applying scanning voltage, electric current is kept to be no more than a upper limit set value；Institute
The upper limit set value stated is 12A；
In the step (b), the scope of scanning voltage is -3V~+0.7V, and is provided with repetitive process three times, for the first time weight
Scanning voltage scope when multiple is -4V~+0.7V；Scanning voltage scope during second of repetition is -5V~+0.7V；For the third time
Scanning voltage scope when repeating is -5.7V~+0.7V；
In the step (b), the duration for applying scanning voltage is 1min, and application scanning voltage when repeating for the first time is held
The continuous time is 2min；The duration of application scanning voltage during second of repetition is 5min；Application when third time repeats is swept
The duration for retouching voltage is 10min, and continues to increase time to PN junction and puncture.
2. the performance test methods of solar cell reverse breakdown according to claim 1, it is characterised in that：Described
In step (c), the luminescence generated by light picture for the solar cell also tested simultaneously after applying a reverse biased, and observe spot
Number.
3. the performance test methods of solar cell reverse breakdown according to claim 1, it is characterised in that this method should
For IBC solar cells.
4. the performance test methods of solar cell reverse breakdown according to claim 3, it is characterised in that：The IBC
Solar cell includes n-type silicon chip (1), has n+ heavily doped layers (2) and p+ heavily doped layers (3) at the back side of n-type silicon chip (1),
And corresponding point contact electrode (23) is drawn on n+ heavily doped layers (2), p+ heavily doped layers (3) respectively, n-type silicon chip (1) is just
Face is coated with antireflective film (4), and the back side of n-type silicon chip (1) is coated with stack membrane (5), and is passivated n+ heavily doped layers (2) simultaneously and p+ is heavily doped
Diamicton (3).
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| CN201510988790.3A CN105406819B (en) | 2015-12-24 | 2015-12-24 | The performance test methods of solar cell reverse breakdown |
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| CN105406819B true CN105406819B (en) | 2018-03-20 |
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| CN106817078B (en) * | 2016-12-28 | 2019-01-01 | 中国电子科技集团公司第十八研究所 | Reverse characteristic testing device for solar cell |
| CN107846193B (en) * | 2017-12-14 | 2019-09-03 | 西安电子科技大学 | A kind of performance test methods of solar battery reverse breakdown three phases |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102565187A (en) * | 2011-12-26 | 2012-07-11 | 嘉兴优太太阳能有限公司 | Method for detecting reverse bias noise in solar cell detection system |
| CN103548257A (en) * | 2011-03-02 | 2014-01-29 | 弗劳恩霍弗实用研究促进协会 | Method for testing the quality of a photovoltaic solar cell, solar cell module and method for producing a photovoltaic solar cell |
| CN104218890A (en) * | 2013-06-03 | 2014-12-17 | 独立行政法人产业技术综合研究所 | I-v characteristic measuring apparatus and i-v characteristic measuring method for solar cell |
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- 2015-12-24 CN CN201510988790.3A patent/CN105406819B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103548257A (en) * | 2011-03-02 | 2014-01-29 | 弗劳恩霍弗实用研究促进协会 | Method for testing the quality of a photovoltaic solar cell, solar cell module and method for producing a photovoltaic solar cell |
| CN102565187A (en) * | 2011-12-26 | 2012-07-11 | 嘉兴优太太阳能有限公司 | Method for detecting reverse bias noise in solar cell detection system |
| CN104218890A (en) * | 2013-06-03 | 2014-12-17 | 独立行政法人产业技术综合研究所 | I-v characteristic measuring apparatus and i-v characteristic measuring method for solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 高效背接触太阳电池反向热击穿特性研究;周涛 等;《高技术通讯》;20151215;第25卷(第12期);第1076-1082页 * |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: TRINA SOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: trina solar Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Applicant after: trina solar Ltd. Address before: Tianhe Electronic Industrial Park Road 213022 north of Jiangsu Province, Changzhou City, No. 2 Applicant before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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