CN105405956B - A kind of multilayer easily leads aluminium base and preparation method thereof - Google Patents
A kind of multilayer easily leads aluminium base and preparation method thereof Download PDFInfo
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- CN105405956B CN105405956B CN201510895767.XA CN201510895767A CN105405956B CN 105405956 B CN105405956 B CN 105405956B CN 201510895767 A CN201510895767 A CN 201510895767A CN 105405956 B CN105405956 B CN 105405956B
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- 239000004411 aluminium Substances 0.000 title claims abstract description 46
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 73
- 239000010436 fluorite Substances 0.000 claims abstract description 36
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 33
- 239000004519 grease Substances 0.000 claims abstract description 12
- 239000000725 suspension Substances 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000741 silica gel Substances 0.000 claims description 8
- 229910002027 silica gel Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000012644 addition polymerization Methods 0.000 claims description 3
- 229910000019 calcium carbonate Inorganic materials 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005202 decontamination Methods 0.000 claims description 3
- 230000003588 decontaminative effect Effects 0.000 claims description 3
- 239000003599 detergent Substances 0.000 claims description 3
- 238000004821 distillation Methods 0.000 claims description 3
- 239000012153 distilled water Substances 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 238000002386 leaching Methods 0.000 claims 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 12
- 238000005286 illumination Methods 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 49
- 239000011229 interlayer Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
The present invention relates to technical field of LED illumination, more particularly to a kind of multilayer easily leads aluminium base and preparation method thereof, including aluminium base flaggy, graphene layer, thermal grease layer and fluorite layer, the aluminium base layer surface is provided with graphene layer, the graphene layer upper end is loaded with thermal grease layer, the thermal grease layer upper end is respectively arranged with graphene layer and the fluorite layer of graphene layer upper end, and provides the preparation method of the aluminium base.The present invention not only has good heat conductivility, while has excellent conductive performance, and resistivity is low, meets energy-saving effect, and insulation effect is good, and preparation method provided by the invention is simple to operation, and cost rate is high, and environment friendly and pollution-free, cost is cheap.
Description
Technical field
The present invention relates to technical field of LED illumination, more particularly to a kind of multilayer easily leads aluminium base and preparation method thereof.
Background technology
Continue to develop with industry, the leap of technology is broken through, and application is widelyd popularize, and LED light efficiency is also constantly carrying
Height, price constantly drop.The appearance of new combined type tube core, the power of single led pipe (module) is also allowed to improve constantly.By same
Industry is continually striving to research and develop, the breakthrough of novel optical design, the exploitation of new lamp kind, and the single situation of product is also expected to further
Reverse.The improvement of control software, also make it that LED illumination use is more convenient.These changes progressively, have all embodied LED hairs
Optical diode has a extensive future illumination application.
LED is referred to as forth generation light source, has energy-saving and environmental protection, safety, long lifespan, low-power consumption, low-heat, high brightness, anti-
Water, it is miniature, shockproof, it is easy light modulation, light beam concentrate, easy maintenance the features such as, can be widely applied to it is various instruction, display, decoration,
The fields such as backlight, general lighting.
LED advantages：Electric light transformation efficiency is high（Close to 60%, green, long lifespan（Up to 100,000 hours）, operating voltage
It is low（3V or so）, repeatedly switch the lossless life-span, small volume, heating less, brightness it is high, it is sturdy and durable, be easy to light modulation, color it is various,
Light beam concentration is stable, it is no-delay to start；
LED shortcomings：Originate cost height, colour rendering is poor, great power LED efficiency is low, constant current driving（Need special drive circuit）.
By contrast, there is the defects of certain in various traditional lightings.
Incandescent lamp：Electric light transformation efficiency is low（10% or so）, short life（1000 hours or so）, heating temp is high, color list
One and colour temperature it is low；
Fluorescent lamp：Electric light transformation efficiency is not high（30% or so）, endanger environment（It is mercurous to wait harmful element, about 3.5-5mg/
Only）, non-adjustable brightness（Low-voltage can not starter light）, ultraviolet radioactive, scintillation, start relatively slow, rare earths material and appreciate（It is glimmering
Light powder accounts for cost proportion and rises to 60 ~ 70% by 10%）, repeatedly switch influence the life-span；Volume is big.
High-voltage gas discharging light：Power consumption is big, using dangerous, short life, heat dissipation problem, is used for outdoor lighting.
The main path and circuit, base can be designed on matrix that baseplate material outwards radiates as heat caused by LED
Plate material requires high electrical insulating properties, high-termal conductivity, high planarization and higher intensity.Aluminium alloy is as currently used
A kind of baseplate material.The use of aluminium base turns into current common approach, and then it is high to have low production efficiency, manufacturing cost for it
Problem, at the same there is also radiating efficiency it is low the problem of.
The content of the invention
In view of the defects and deficiencies of the prior art, the present invention intends to provide a kind of multilayer easily leads aluminium base, the aluminium
Substrate has sandwich construction, easy to make, has good heat conductivility, possesses good radiating efficiency.
To achieve the above object, the present invention uses following technical scheme：
A kind of multilayer of the present invention easily leads aluminium base, including aluminium base flaggy, graphene layer, thermal grease layer and fluorite
Layer, the aluminium base layer surface are provided with graphene layer, and the graphene layer upper end is loaded with thermal grease layer, the radiating silicon
Glue-line upper end is respectively arranged with graphene layer and the fluorite layer of graphene layer upper end.
Wherein, the graphene layer is formed using graphene sol plated film.
Wherein, the preparation method of the graphene sol plated film is as follows：
（1）The preparation of graphene oxide colloidal sol：Graphite oxide is ground into the fine powder that particle diameter is 1-40 microns, and and solvent
The suspension that concentration is 0.5-6mg/ml is configured to, after being ultrasonically treated 10-120 minutes, removes the unstable impurity in suspension,
Obtain graphene oxide colloidal sol；
（2）The preparation of plated film precursor liquid：Rutile titanium dioxide is ground into the fine crack that particle diameter is 100-1000 nanometers,
Addition polymerization vinylpyrrolidone, the suspension that concentration is 0.01-0.15 mg/ml is configured to absolute ethyl alcohol, is ultrasonically treated 10-30
Minute, it is added in graphene oxide colloidal sol, forms plated film precursor liquid；
（3）The preparation of graphene film layer：Plated film precursor liquid is coated in substrate surface, 30-100 DEG C is heated to, by 10-
200 minutes, you can obtain graphene sol plated film.
Wherein, the fluorite layer is formed using nanometer fluorite suspension plated film.
A kind of multilayer easily leads the preparation method of aluminium base, and its step is as follows：
（1）Deoil decontamination：Aluminium base plate surface is washed using neutral detergent, surface and oil contaminant is removed, then using anhydrous second
Alcohol is washed three times, and distillation water washing three times, is dried；
（2）Bottom graphene plated film：The aluminium base washed is subjected to Best-Effort request, pull rate 100-600mm/
Min, impregnating speed 400-600mm/min, dip time 1min, interval time 5min, lifting number are 10 times, lifting
After end, by 60-100 DEG C of drying of aluminium base；
（3）It is prepared by heat conduction silicone：Inorganic bond is coated with heat conductive silica gel surface, and is adhered to graphene layer
Surface；
（4）It is prepared by graphene film layer：In heat conductive silica gel surface even application graphene sol, naturally dry, at 30-60 DEG C
Dried；
（5）Fluorite layer loads：Fluorite suspension is sprayed on graphene film layer surface by the way of spraying, and at 70 DEG C
Lower drying, natural cooling；
（6）Cleaning：Fluorite layer surface is cleaned multiple times using absolute ethyl alcohol and distilled water, then naturally dry, that is, obtained more
Layer easily leads aluminium base.
Wherein, the preparation method of the fluorite suspension is that Fluorspar Powder is ground into the fine powder of 10-100 microns, is equipped with poly-
Vinylpyrrolidone, modified organic silicone resin, calcium carbonate superfine powder, naphthenic oil are auxiliary material, and 10-15% fluorite is configured to colloidal sol
Suspension.
The present invention has the beneficial effect that：The present invention provides a kind of multilayer and easily leads aluminium base, including aluminium base flaggy, graphene layer,
Thermal grease layer and fluorite layer, are loaded with fluorite layer, can have insulating effect, considerably increase insulation effect, ensure aluminium base
The using effect of plate；Using the graphene film layer of double-decker, the electric action of graphene can be made full use of, plays energization
Effect, while can also reduce energy loss so that the energy-saving effect of LED is more prominent, while bilayer graphene is also fully sharp
With its high thermal conductivity, heat can be scattered and disappeared；Graphene film interlayer is provided with heat conductive silica gel, can ensure graphene film interlayer
The uniformity of temperature, while also ensure that graphene film layer is in identical environment, contributes to the stability of circuit；The present invention also provides
Multilayer easily leads the preparation method of aluminium base, and this method is simple and quick, and yield rate is higher, workable, use simultaneously
Raw material it is relatively common common, be advantageous to mass produce.
Brief description of the drawings
Fig. 1 is the side structure schematic diagram of the present invention；
Embodiment
The present invention is further illustrated below in conjunction with the accompanying drawings.
Embodiment 1：
A kind of multilayer easily leads aluminium base, including aluminium base flaggy, graphene layer, thermal grease layer and fluorite layer, the aluminium base
Flaggy surface is provided with graphene layer, and the graphene layer upper end is loaded with thermal grease layer, the thermal grease layer upper end point
Graphene layer and the fluorite layer of graphene layer upper end are not provided with.
Wherein, the graphene layer is formed using graphene sol plated film.
Wherein, the preparation method of the graphene sol plated film is as follows：
（1）The preparation of graphene oxide colloidal sol：Graphite oxide is ground into the fine powder that particle diameter is 1-40 microns, and and solvent
The suspension that concentration is 0.5-6mg/ml is configured to, after being ultrasonically treated 10-120 minutes, removes the unstable impurity in suspension,
Obtain graphene oxide colloidal sol；
（2）The preparation of plated film precursor liquid：Rutile titanium dioxide is ground into the fine crack that particle diameter is 100-1000 nanometers,
Addition polymerization vinylpyrrolidone, the suspension that concentration is 0.01-0.15 mg/ml is configured to absolute ethyl alcohol, is ultrasonically treated 10-30
Minute, it is added in graphene oxide colloidal sol, forms plated film precursor liquid；
（3）The preparation of graphene film layer：Plated film precursor liquid is coated in substrate surface, 30-100 DEG C is heated to, by 10-
200 minutes, you can obtain graphene sol plated film.
Wherein, the fluorite layer is formed using nanometer fluorite suspension plated film.
Embodiment 2：
A kind of multilayer easily leads the preparation method of aluminium base, and its step is as follows：
（1）Deoil decontamination：Aluminium base plate surface is washed using neutral detergent, surface and oil contaminant is removed, then using anhydrous second
Alcohol is washed three times, and distillation water washing three times, is dried；
（2）Bottom graphene plated film：The aluminium base washed is subjected to Best-Effort request, pull rate 100-600mm/
Min, impregnating speed 400-600mm/min, dip time 1min, interval time 5min, lifting number are 10 times, lifting
After end, by 60-100 DEG C of drying of aluminium base；
（3）It is prepared by heat conduction silicone：Inorganic bond is coated with heat conductive silica gel surface, and is adhered to graphene layer
Surface；
（4）It is prepared by graphene film layer：In heat conductive silica gel surface even application graphene sol, naturally dry, at 30-60 DEG C
Dried；
（5）Fluorite layer loads：Fluorite suspension is sprayed on graphene film layer surface by the way of spraying, and at 70 DEG C
Lower drying, natural cooling；
（6）Cleaning：Fluorite layer surface is cleaned multiple times using absolute ethyl alcohol and distilled water, then naturally dry, that is, obtained more
Layer easily leads aluminium base.
Wherein, the preparation method of the fluorite suspension is that Fluorspar Powder is ground into the fine powder of 10-100 microns, is equipped with poly-
Vinylpyrrolidone, modified organic silicone resin, calcium carbonate superfine powder, naphthenic oil are auxiliary material, and 10-15% fluorite is configured to colloidal sol
Suspension.
In summary, a kind of multilayer provided by the invention easily leads aluminium base, including aluminium base flaggy, graphene layer, radiating silicon
Glue-line and fluorite layer, are loaded with fluorite layer, can have insulating effect, considerably increase insulation effect, ensure making for aluminium base
Use effect；Using the graphene film layer of double-decker, the electric action of graphene can be made full use of, plays the effect of energization,
Energy loss can also be reduced simultaneously so that the energy-saving effect of LED is more prominent, while bilayer graphene also makes full use of it high
Heat conductivility, heat can be scattered and disappeared；Graphene film interlayer is provided with heat conductive silica gel, can ensure graphene film interlayer temperature
Uniformity, while also ensure that graphene film layer is in identical environment, contributes to the stability of circuit；Present invention also offers multilayer
The preparation method of aluminium base is easily led, this method is simple and quick, and yield rate is higher, workable, while the raw material used
It is relatively common common, be advantageous to mass produce.
Described above is only the better embodiment of the present invention, therefore all constructions according to described in present patent application scope,
The equivalent change or modification that feature and principle are done, is included in the range of present patent application.
Claims (6)
1. a kind of multilayer easily leads aluminium base, it is characterised in that：Including aluminium base flaggy, graphene layer, thermal grease layer and fluorite layer,
The aluminium base layer surface is provided with graphene layer, and the graphene layer upper end is loaded with thermal grease layer, the thermal grease
Layer upper end is respectively arranged with graphene layer and the fluorite layer of graphene layer upper end.
2. multilayer as claimed in claim 1 easily leads aluminium base, it is characterised in that：The graphene layer is plated using graphene sol
Film forms.
3. multilayer as claimed in claim 2 easily leads aluminium base, it is characterised in that：The preparation method of the graphene sol plated film
It is as follows：
(1) preparation of graphene oxide colloidal sol：Graphite oxide is ground into the fine powder that particle diameter is 1-40 microns, and prepared with solvent
Into the suspension that concentration is 0.5-6mg/ml, after being ultrasonically treated 10-120 minutes, the unstable impurity in suspension is removed, is obtained
Graphene oxide colloidal sol；
(2) preparation of plated film precursor liquid：Rutile titanium dioxide is ground into the fine crack that particle diameter is 100-1000 nanometers, addition polymerization
Vinylpyrrolidone, the suspension that concentration is 0.01-0.15mg/ml is configured to absolute ethyl alcohol, is ultrasonically treated 10-30 minutes,
It is added in graphene oxide colloidal sol, forms plated film precursor liquid；
(3) preparation of graphene film layer：Plated film precursor liquid is coated in substrate surface, 30-100 DEG C is heated to, by 10-200
Minute, you can obtain graphene sol plated film.
4. multilayer as claimed in claim 1 easily leads aluminium base, it is characterised in that：The fluorite layer uses nanometer fluorite suspension
Plated film forms.
5. a kind of multilayer easily leads the preparation method of aluminium base, its step is as follows：
(1) deoil decontamination：Aluminium base plate surface is washed using neutral detergent, surface and oil contaminant is removed, is then washed using absolute ethyl alcohol
Wash three times, distillation water washing three times, is dried；
(2) bottom graphene plated film：The aluminium base washed is subjected to Best-Effort request, pull rate 100-600mm/min, leaching
Stain speed is 400-600mm/min, dip time 1min, interval time 5min, and lifting number is 10 times, and lifting terminates
Afterwards, by 60-100 DEG C of drying of aluminium base；
(3) prepared by heat conduction silicone：Inorganic bond is coated with heat conductive silica gel surface, and is adhered to graphene layer table
Face；
(4) prepared by graphene film layer：In heat conductive silica gel surface even application graphene sol, naturally dry, in 30-60 DEG C of progress
Drying；
(5) fluorite layer loads：Fluorite suspension is sprayed on graphene film layer surface by the way of spraying, and dried at 70 DEG C
It is dry, natural cooling；
(6) clean：Fluorite layer surface is cleaned multiple times using absolute ethyl alcohol and distilled water, then naturally dry, that is, it is easy to obtain multilayer
Lead aluminium base.
6. multilayer as claimed in claim 5 easily leads the preparation method of aluminium base, it is characterised in that：The system of the fluorite suspension
Preparation Method is the fine powder that Fluorspar Powder is ground into 10-100 microns, is equipped with polyvinylpyrrolidone, modified organic silicone resin, ultra-fine
Calcium carbonate, naphthenic oil are auxiliary material, and 10-15% fluorite suspension is configured to colloidal sol.
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|---|---|---|---|---|
| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
| CN204407364U (en) * | 2015-02-06 | 2015-06-17 | 昆山龙腾光电有限公司 | LED chip radiator structure |
| CN104953001A (en) * | 2015-05-29 | 2015-09-30 | 华灿光电(苏州）有限公司 | Transparent electroconductive film preparation method |
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| CN204062952U (en) * | 2014-09-26 | 2014-12-31 | 上海集成电路研发中心有限公司 | A kind of radiator structure of LED lamp |
| CN204407364U (en) * | 2015-02-06 | 2015-06-17 | 昆山龙腾光电有限公司 | LED chip radiator structure |
| CN104953001A (en) * | 2015-05-29 | 2015-09-30 | 华灿光电(苏州）有限公司 | Transparent electroconductive film preparation method |
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