CN105405900A - Cadmium telluride solar cell and preparation method thereof - Google Patents
Cadmium telluride solar cell and preparation method thereof Download PDFInfo
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- CN105405900A CN105405900A CN201510724289.6A CN201510724289A CN105405900A CN 105405900 A CN105405900 A CN 105405900A CN 201510724289 A CN201510724289 A CN 201510724289A CN 105405900 A CN105405900 A CN 105405900A
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- cadmium telluride
- solar cell
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 32
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 25
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000004070 electrodeposition Methods 0.000 claims abstract description 10
- 238000000224 chemical solution deposition Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 23
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 229910021555 Chromium Chloride Inorganic materials 0.000 claims description 9
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 4
- 239000005695 Ammonium acetate Substances 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 229940043376 ammonium acetate Drugs 0.000 claims description 4
- 235000019257 ammonium acetate Nutrition 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000005361 soda-lime glass Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- GRWVQDDAKZFPFI-UHFFFAOYSA-H chromium(III) sulfate Chemical compound [Cr+3].[Cr+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O GRWVQDDAKZFPFI-UHFFFAOYSA-H 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- RMNHDLHNAMASBA-UHFFFAOYSA-K CO.[Cl-].[Cr+3].[Cl-].[Cl-] Chemical class CO.[Cl-].[Cr+3].[Cl-].[Cl-] RMNHDLHNAMASBA-UHFFFAOYSA-K 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims 1
- WYYQVWLEPYFFLP-UHFFFAOYSA-K chromium(3+);triacetate Chemical compound [Cr+3].CC([O-])=O.CC([O-])=O.CC([O-])=O WYYQVWLEPYFFLP-UHFFFAOYSA-K 0.000 claims 1
- 238000002207 thermal evaporation Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000005457 optimization Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 10
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000012528 membrane Substances 0.000 description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 7
- 229910004613 CdTe Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- FQHYQCXMFZHLAE-UHFFFAOYSA-N 25405-85-0 Chemical compound CC1(C)C2(OC(=O)C=3C=CC=CC=3)C1C1C=C(CO)CC(C(C(C)=C3)=O)(O)C3C1(O)C(C)C2OC(=O)C1=CC=CC=C1 FQHYQCXMFZHLAE-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a cadmium telluride solar cell, and a titanium oxide film buffer layer is deposited on a surface of the substrate. A titanium oxide (TiO<2>) film contained in the cadmium telluride solar cell as a buffer layer solves a shunting problem, the yield rate and repeatability of a cadmium telluride/cadmium sulfide photovoltaic device are improved, and performance of the a cadmium sulfide/cadmium telluride device is effectively improved. The invention further discloses a preparation method of the cadmium telluride solar cell. Cadmium sulfide and cadmium telluride are obtained through chemical bath deposition (CBD) and electrochemical deposition (ED), and 6.1% conversion efficiency is obtained through FTO/CdS/CdTe/Au structure without any back contact resistance optimization condition.
Description
Technical field
The present invention relates to film photovoltaic technology, especially relate to a kind of cadmium telluride solar cell containing thin film of titanium oxide resilient coating and preparation method thereof.
Background technology
Polycrystalline cadmium sulfide/cadmium telluride (CdS/CdTe) is one of most important film photovoltaic material system.2014, cadmium telluride solar cell energy conversion efficiency through certification has reached 21.5% (first Sunpower Corp.), the record of this single-unit solar cell 21.7% closely created by Copper Indium Gallium Selenide (CIGS) thin-film solar cells.In addition, as binary compound, Cadimium telluride thin film has the simpler and better feature of repeatability of preparation.The potentiality of the Cadimium telluride thin film photovoltaic technology that these facts all show.
At present, the cadmium telluride deposition process of main flow needs high temperature and low vacuum equipment, not only increases production cost, is simultaneously difficult to compatibility with the flexibility in future and nanostructure photovoltaic device technique.Traditional device architecture, it is generally glass/TCO (a kind of transparency conducting layer)/cadmium sulfide/cadmium telluride/back electrode, a large amount of discussions that is operated in (refers to J.Li with p-type cadmium telluride ohmic contact problem, et.al., " RapidthermalprocessingofZnTe:CucontactedCdTesolarcells, " inPhotovoltaicSpecialistConference (PVSC), 2014IEEE40th, 2014, pp.2360-2365.).But the incomplete problem of covering of the shunting problems that cadmium sulfide Hole causes and TCO surface sulfide cadmium is also badly in need of solving, and these problems have impact on yield and the repeatability of device all largely.
In general, there are two kinds of solutions for the problems referred to above: (1) uses the TCO of high resistivity and the TCO mixing of low-resistivity, and such as unadulterated tin oxide (TO) or zinc oxide add fluorine-doped tin oxide (FTO); (2) use thick cadmium sulfide evenly and intactly cover TCO surface.But these two kinds of methods add the optical absorption loss in cadmium sulfide layer simultaneously.
Summary of the invention
For overcoming above-mentioned technological deficiency, the invention discloses a kind of cadmium telluride solar cell containing thin film of titanium oxide resilient coating, titanium oxide resilient coating can be utilized to improve cadmium telluride solar cell device performance.
The invention also discloses the preparation method of above-mentioned cadmium telluride solar cell.
The technical solution used in the present invention is as follows:
A kind of cadmium telluride solar cell, deposits thin film of titanium oxide resilient coating at substrate surface.
Above-mentioned cadmium telluride solar cell is successively containing substrate layer, thin film of titanium oxide resilient coating, cadmium sulphide membrane layer and Cadimium telluride thin film layer and back electrode.
Described substrate is soda-lime glass.
Described substrate layer surface has fluorine-doped tin oxide transparent conductive layer.
The invention also discloses a kind of preparation method of cadmium telluride solar cell, comprise following steps:
(1) by magnetically controlled DC sputtering at substrate layer deposited oxide ti thin film layer;
(2) utilize chemical baths to deposit cadmium sulphide membrane layer on thin film of titanium oxide layer surface;
(3) electrochemical deposition method is utilized to deposit Cadimium telluride thin film layer at cadmium sulphide membrane layer;
(4) use chromium chloride to processing at cadmium sulphide membrane layer and making back electrode.
Thin film of titanium oxide layer described in described step (1), by Deposited By Dc Magnetron Sputtering, after sputtering, is annealed to thin film of titanium oxide layer.
In described step (2), chemical bath deposition solution is any one or a few in chromic acetate, thiocarbamide, ammonium acetate and ammonium hydroxide, is preferably the mixed solution of chromic acetate, thiocarbamide, ammonium acetate and ammonium hydroxide.
In described step (3), electrochemical deposition solution is for mix for sulfuric acid, chromium sulfate, chromium chloride and tellurium dioxide.
In described step (4), after Cadimium telluride thin film layer deposition, deionized water is used to clean the sample obtained, then sample is immersed in supersaturation methanol solution of chromium chloride, then use methyl alcohol to sample wash, dry up again, sample is annealed under argon gas and compressed air atmosphere, finally, by hot vapor deposition gold dot matrixes as back electrode.
Beneficial effect of the present invention is:
(1) titanium oxide (TiO of densification that contains of cadmium telluride solar cell of the present invention
2) film solves the problem of shunting as resilient coating and improve yield and the repeatability of cadmium telluride/cadmium sulfide photovoltaic device, effectively improving cadmium sulfide/cadmium telluride solar cell device performance, work as TiO
2thickness when being applicable to, the yield of device rises 20% to 80%, and maximum conversion rate reaches 8.0%, and the stability of device also improves significantly.
(2) the present invention uses solution methods, and temperature is lower, reduces production cost, simultaneously with flexibility and the nanostructure photovoltaic device process compatible in future, and does not rely on vacuum equipment, effectively reduces production cost.
(3) cadmium sulfide and cadmium telluride is obtained in the present invention by chemical bath deposition (CBD) and electrochemical deposition (ED), without any under back contacts resistance optimal conditions, obtain 6.1% transformation efficiency by FTO/CdS/CdTe/Au structure.
Accompanying drawing explanation
Fig. 1 is cadmium telluride solar cell device structural representation of the present invention;
Fig. 2 is cross-sectional scanning electron microscope (SEM) picture of cadmium telluride solar cell of the present invention;
Fig. 3 is Current density-voltage (J-V) curve;
Fig. 4 is (a) cadmium telluride CdTe, (b) cadmium sulfide CdS and (c) titanium oxide TiO
2surface Scanning Electron microscope (SEM) picture.Illustration is the X ray diffracting spectrum (XRD) of respective material.
Fig. 5 is the yield of devices that different titanium oxide thickness is corresponding;
Fig. 6 is with reference to battery (darker curve) and has the aerial efficiency attenuation curve of 20 nano oxidized titanium layer battery (lighter curve).
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented by embodiments different in addition and be applied, and the every details in this specification also based on the application of different viewpoints, can carry out various modification or change under not deviating from spirit of the present invention.
Cadmium telluride solar cell device structural representation of the present invention as shown in Figure 1, successively containing substrate layer 1, thin film of titanium oxide resilient coating 3, cadmium sulphide membrane layer 4 and Cadimium telluride thin film layer 5 and back electrode 6, described substrate is soda-lime glass, and described substrate surface has fluorine-doped tin oxide transparent conductive layer 2.
The invention also discloses a kind of preparation method of cadmium telluride solar cell, comprise following steps:
(1) by magnetically controlled DC sputtering at substrate layer deposited oxide ti thin film layer: air-flow is 4 standard atmospheric pressure cubic decimeter oxygen mix per minute 25 standard atmospheric pressure cubic decimeter argon gas per minute; Chamber pressure is 0.6 handkerchief; Target is titanium.The TiO of 20 nanometers to 100 nanometer different-thickness is obtained by different sputtering time
2film.After sputtering, TiO
2sample is annealed 30 minutes in 500 degrees Celsius of cavitys, and gas flow is 300 standard atmospheric pressure cubic decimeters compressed air per minute.
(2) chemical baths is utilized to deposit cadmium sulphide membrane layer on thin film of titanium oxide layer surface: cadmium sulfide CdS layer deposits acquisition in 30 minutes by chemical bath deposition processes in 90 degrees celsius, and chemical bath deposition solution is 5 × 10
-4mole/L chromic acetate (Cd (CH
3cOO)
2), 5 × 10
-4mole/L thiocarbamide (CH
4n
2s), 3 × 10
-2mole/L ammonium acetate (CH
3cOONH
4) and 0.5 mole/L ammonium hydroxide (NH
4oH).
(3) electrochemical deposition method is utilized to deposit Cadimium telluride thin film layer at cadmium sulphide membrane layer: under 85 degrees celsius, cadmium sulfide CdS to use electrochemical deposition method deposit one deck cadmium telluride CdTe.Employing three-electrode system deposits, and wherein sample, carbon-point and Ag/AgCl electrode are respectively as work electrode, to electrode and reference electrode.By barostat CHI1000C, provide with reference to Ag/AgCl-610 millivolt electromotive force.Solution is the sulfuric acid (H of pH value 1.8
2sO
4), the chromium sulfate (CdSO of 0.7 mole/L
4), 3.56 × 10
-4mole/L chromium chloride (CdCl2) and tellurium dioxide (TeO
2) mix.
(4) use chromium chloride to processing at cadmium sulphide membrane layer and making back electrode: to use chromium chloride CdCl
2back electrode 6 makes to sample treatment.After CdTe deposition, use deionized water to sample clean, be then immersed in the supersaturation chromium chloride CdCl of 60 degrees Celsius
2in methanol solution 20 minutes.Next, use methyl alcohol to sample wash, re-use compressed air and dry up.Sample is under argon gas (200 standard atmospheric pressure cubic decimeters are per minute) and compressed air (200 standard atmospheric pressure cubic decimeters are per minute) atmosphere, use 370 degrees Celsius of annealing, finally, by golden round dot (0.0314 square centimeter) array of hot vapor deposition 12 50 nanometer thickness as back electrode.
Before preparing cadmium telluride solar cell, first clean soda-lime glass substrate 1, use cleaning agent, acetone, isopropyl alcohol and deionized water to clean substrate successively in ultrasonic cleaners.
In step 2 of the present invention) in, the present invention is based on film photovoltaic technology, use solution methods to prepare cadmium telluride/cadmium sulfide solar cell, effectively reduce preparation problem, avoid the use of vacuum equipment simultaneously.Meanwhile, adding of titanium oxide resilient coating, improve the performance of solar cell device.
In sum; although the specific embodiment of the present invention is to invention has been detailed description; but persons skilled in the art should be understood that; above-described embodiment is only the description to the preferred embodiments of the present invention; but not limiting the scope of the invention; persons skilled in the art are in the technical scope disclosed by the present invention, and the change that can expect easily, all within protection scope of the present invention.
Claims (9)
Priority Applications (1)
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|---|---|---|---|
| CN201510724289.6A CN105405900B (en) | 2015-10-29 | 2015-10-29 | A kind of cadmium telluride solar battery and preparation method thereof |
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|---|---|---|---|
| CN201510724289.6A CN105405900B (en) | 2015-10-29 | 2015-10-29 | A kind of cadmium telluride solar battery and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105405900A true CN105405900A (en) | 2016-03-16 |
| CN105405900B CN105405900B (en) | 2018-12-04 |
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183141A (en) * | 2017-12-28 | 2018-06-19 | 成都中建材光电材料有限公司 | A kind of cadmium telluride thin-film battery of new structure and preparation method thereof |
| CN114664952A (en) * | 2022-03-15 | 2022-06-24 | 北京大学深圳研究生院 | Thin-film solar cell back contact structure and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165695A (en) * | 2011-12-09 | 2013-06-19 | 龙焱能源科技（杭州）有限公司 | Cadmium telluride (CdTe) thin film solar battery |
| CN103210498A (en) * | 2010-08-13 | 2013-07-17 | 第一太阳能有限公司 | Photovoltaic device |
| CN104241439A (en) * | 2013-06-09 | 2014-12-24 | 北京恒基伟业投资发展有限公司 | Method for preparing cadmium telluride thin-film solar cell |
-
2015
- 2015-10-29 CN CN201510724289.6A patent/CN105405900B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103210498A (en) * | 2010-08-13 | 2013-07-17 | 第一太阳能有限公司 | Photovoltaic device |
| CN103165695A (en) * | 2011-12-09 | 2013-06-19 | 龙焱能源科技（杭州）有限公司 | Cadmium telluride (CdTe) thin film solar battery |
| CN104241439A (en) * | 2013-06-09 | 2014-12-24 | 北京恒基伟业投资发展有限公司 | Method for preparing cadmium telluride thin-film solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183141A (en) * | 2017-12-28 | 2018-06-19 | 成都中建材光电材料有限公司 | A kind of cadmium telluride thin-film battery of new structure and preparation method thereof |
| CN114664952A (en) * | 2022-03-15 | 2022-06-24 | 北京大学深圳研究生院 | Thin-film solar cell back contact structure and preparation method and application thereof |
| CN114664952B (en) * | 2022-03-15 | 2024-06-18 | 北京大学深圳研究生院 | Back contact structure of thin film solar cell and preparation method and application thereof |
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