CN105405872A - Epitaxial wafer for triode and preparation method thereof - Google Patents
Epitaxial wafer for triode and preparation method thereof Download PDFInfo
- Publication number
- CN105405872A CN105405872A CN201510727930.1A CN201510727930A CN105405872A CN 105405872 A CN105405872 A CN 105405872A CN 201510727930 A CN201510727930 A CN 201510727930A CN 105405872 A CN105405872 A CN 105405872A
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- China
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- gan
- layer
- inaln
- epitaxial wafer
- resilient coating
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 24
- 239000010980 sapphire Substances 0.000 claims abstract description 24
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 31
- 239000011435 rock Substances 0.000 claims description 25
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 abstract 3
- 238000010899 nucleation Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000002156 mixing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 208000032750 Device leakage Diseases 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
The invention provides an epitaxial wafer for a triode and a preparation method thereof. A triode electronic device prepared by the epitaxial wafer has the advantages of low electric leakage, a high breakdown voltage and the long service life. The epitaxial wafer for the triode comprises a substrate, a GaN nucleation layer, a GaN buffer layer, a GaN channel layer and an InAlN intrinsic layer and a GaN cover layer which are successively stacked; and the substrate is a graphical sapphire substrate, the GaN nucleation layer is a C-doped GaN nucleation layer, and the GaN buffer layer is a C-doped GaN buffer layer.
Description
Technical field
the present invention relates to a kind of triode epitaxial wafer and preparation method thereof, particularly a kind of triode epitaxial wafer using image conversion Sapphire Substrate and preparation method thereof.
Background technology
substrate at present for the epitaxial wafer of triode mainly contains two kinds, i.e. Sapphire Substrate and silicon carbide substrates.But expensive due to carborundum, therefore the use of Sapphire Substrate is more extensive.The plain film shape Sapphire Substrate generally used in prior art is higher due to its dislocation density, and the triode electronic device leakage current made is higher, easily puncture.
Summary of the invention
for the problems referred to above, the object of this invention is to provide a kind of triode epitaxial wafer and preparation method thereof, the triode electronic device electric leakage of being made up of it is lower, puncture voltage is higher, the life-span is longer.
for solving the problems of the technologies described above, the technical solution used in the present invention is:
a kind of triode epitaxial wafer, comprise the substrate, GaN nucleating layer, GaN resilient coating, GaN channel layer, InAlN intrinsic layer, the GaN cap rock that stack gradually, described substrate is graphical sapphire substrate, described GaN nucleating layer is the GaN nucleating layer of C doping, and described GaN resilient coating is the GaN resilient coating of C doping.
preferably, the pattern height of described graphical sapphire substrate, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm, or are respectively 1.7 μm, 2.6 μm, 0.4 μm, or are respectively 1.2 μm, 1.8 μm, 0.1 μm.
preferably, the thickness of described GaN nucleating layer is 20 ~ 50nm; The thickness of described GaN resilient coating is 2 ~ 3 μm; The thickness of described GaN channel layer is 80 ~ 150nm; The thickness of described InAlN intrinsic layer is 6 ~ 15nm; The thickness of described GaN cap rock is 1 ~ 2nm.
preferably, the doped source of C that described GaN nucleating layer and described GaN resilient coating adopt is CCl
4
or C
2
h
2
.
preferably, in described InAlN intrinsic layer, the molar content of In is 20 ~ 30%.
the another technical scheme that the present invention adopts is:
a preparation method for triode epitaxial wafer as above, comprises the steps:
a is by the H of graphical sapphire substrate at 1050 ~ 1100 DEG C
2
high temperature purification 5 ~ 10min under atmosphere;
b is at H
2
substrate after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, at the GaN nucleating layer that Grown C adulterates;
c temperature is increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer grows the GaN resilient coating of C doping;
d at the temperature of 1000 ~ 1050 DEG C, growing GaN channel layer on described GaN resilient coating;
e grows InAlN intrinsic layer on described GaN channel layer;
f is growing GaN cap rock on described InAlN intrinsic layer.
preferably, in step B, MOCVD technique is adopted to grow described GaN nucleating layer over the substrate.
preferably, described GaN resilient coating is the GaN resilient coating of C doping, and the growth pressure of described GaN resilient coating is 30 ~ 50mbar.
preferably, the growth pressure of described InAlN intrinsic layer, GaN cap rock is 50 ~ 70mbar or 70 ~ 100mbar or 100 ~ 133mbar or 133 ~ 166mbar or 166 ~ 200mbar.
preferably, the growth temperature of described InAlN intrinsic layer, GaN cap rock is 980 ~ 1000 DEG C or 1000 ~ 1020 DEG C or 1020 ~ 1050 DEG C or 1050 ~ 1080 DEG C.
the present invention adopts above technical scheme, tool has the following advantages compared to existing technology: the GaN nucleating layer mixing C in graphical sapphire substrate growth has made the more semi-insulating GaN of high-crystal quality with the GaN resilient coating mixing C, made triode epitaxial wafer crystal mass is better, compare the triode epitaxial wafer that conventional plain film Sapphire Substrate makes, dislocation density is by 1E9cm
-3
be reduced to 1E8cm
-3
, and the triode electronic device leakage current made of this epitaxial wafer is lower, puncture voltage is higher, and the life-span is longer.
Accompanying drawing explanation
in order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings, wherein:
fig. 1 is the structural representation of triode epitaxial wafer of the present invention.
in above-mentioned accompanying drawing, 1, substrate; 2, GaN nucleating layer; 3, GaN resilient coating; 4, epitaxial structure layer; 41, GaN channel layer; 42, InAlN intrinsic layer; 43, GaN cap rock.
Embodiment
below preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be understood by those skilled in the art.
figure 1 shows that a kind of triode epitaxial wafer of the present invention.Shown in composition graphs 1, this triode epitaxial wafer comprises the substrate 1, GaN nucleating layer 2, GaN resilient coating 3, GaN channel layer 41, InAlN intrinsic layer 42, the GaN cap rock 43 that stack gradually.
described substrate 1 is graphical sapphire substrate (PSS) 1.The pattern height of graphical sapphire substrate 1, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm; Or the pattern height of graphical sapphire substrate 1, width, gap are respectively 1.7 μm, 2.6 μm, 0.4 μm; Or the pattern height of graphical sapphire substrate 1, width, gap are respectively 1.2 μm, 1.8 μm, 0.1 μm.
the GaN resilient coating 3 that GaN nucleating layer 2, the GaN resilient coating 3 that nucleating layer 2 adulterates for C adulterates for C.GaN nucleating layer 2 and GaN resilient coating 3 are all used C doping, jointly as the insulating barrier of triode epitaxial wafer, form semi-insulating GaN with image conversion Sapphire Substrate 1.The thickness of GaN nucleating layer 2 is the thickness of 20 ~ 50nm, GaN resilient coating 3 is 2 ~ 3 μm.The doped source of the C that GaN nucleating layer 2 and described GaN resilient coating 3 adopt is CCl
4
or C
2
h
2
.
channel layer 41, InAlN intrinsic layer 42, GaN cap rock 43 form the epitaxial structure layer 4 of triode epitaxial wafer.Wherein, the thickness of the thickness of GaN channel layer 41 to be the thickness of 80 ~ 150nm, InAlN intrinsic layer 42 be 6 ~ 15nm, GaN cap rock 43 is 1 ~ 2nm.In InAlN intrinsic layer 42, the molar content of In is 20 ~ 30%.
a preparation method for above-mentioned triode epitaxial wafer, comprises the steps:
a, provide graphical sapphire substrate 1, by the H of graphical sapphire substrate 1 at 1050 ~ 1100 DEG C
2
high temperature purification 5 ~ 10min under atmosphere;
b, at H
2
graphical sapphire substrate 1 after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, growing GaN nucleating layer 2 on graphical sapphire substrate 1;
c, temperature are increased to 1040 ~ 1080 DEG C, growing GaN resilient coating 3 on described GaN nucleating layer 2;
d, at the temperature of 1000 ~ 1050 DEG C, GaN channel layer 41, the GaN channel layer 41 that described GaN resilient coating 3 grows undoped is covered on GaN resilient coating 3;
e, on described GaN channel layer 41, grow InAlN intrinsic layer 42, InAlN intrinsic layer 42 if calcium is on GaN channel layer 41;
f, on described InAlN intrinsic layer 42, growing GaN cap rock 43, GaN cap rock 43 is covered on InAlN intrinsic layer 42.
in step B, MOCVD technique (i.e. metallo-organic compound chemical gaseous phase deposition technique, Metal-organicChemicalVaporDeposition) is adopted to grow described GaN nucleating layer 2 on described substrate 1.
in step C, the growth pressure of described GaN resilient coating 3 is 30 ~ 50mbar.
in the step e, F of growing epitaxial structure sheaf 4, the growth pressure of InAlN intrinsic layer 42, GaN cap rock 43 is 50 ~ 70mbar; Or the growth pressure of InAlN intrinsic layer 42, GaN cap rock 43 is 70 ~ 100mbar; Or the growth pressure of InAlN intrinsic layer 42, GaN cap rock 43 is 100 ~ 133mbar; Or the growth pressure of InAlN intrinsic layer 42, GaN cap rock 43 is 133 ~ 166mbar; Or the growth pressure of InAlN intrinsic layer 42, GaN cap rock 43 is 166 ~ 200mbar.
the growth temperature of intrinsic layer 42, GaN cap rock 43 is 980 ~ 1000 DEG C; Or the growth temperature of InAlN intrinsic layer 42, GaN cap rock 43 is 1000 ~ 1020 DEG C; Or the growth temperature of InAlN intrinsic layer 42, GaN cap rock 43 is 1020 ~ 1050 DEG C; Or the growth temperature of InAlN intrinsic layer 42, GaN cap rock 43 is 1050 ~ 1080 DEG C.
compare the triode epitaxial wafer that plain film Sapphire Substrate is made, the present invention in image conversion Sapphire Substrate, deposit the GaN nucleating layer mixing C and the GaN resilient coating mixing C forms semi-insulating GaN, and the dislocation density of the triode epitaxial wafer made on this basis is by 1E9cm of the prior art
-3
be reduced to 1E8cm
-3
.
above-described embodiment for technical conceive of the present invention and feature are described, is only a kind of preferred embodiment, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.The equivalence change that all Spirit Essences according to the present invention are done or modification, all should be encompassed within protection scope of the present invention.
Claims (10)
1. a triode epitaxial wafer, comprise the substrate, GaN nucleating layer, GaN resilient coating, GaN channel layer, InAlN intrinsic layer, the GaN cap rock that stack gradually, it is characterized in that: described substrate is graphical sapphire substrate, described GaN nucleating layer is the GaN nucleating layer of C doping, and described GaN resilient coating is the GaN resilient coating of C doping.
2. epitaxial wafer according to claim 1, it is characterized in that: the pattern height of described graphical sapphire substrate, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm, or be respectively 1.7 μm, 2.6 μm, 0.4 μm, or be respectively 1.2 μm, 1.8 μm, 0.1 μm.
3. epitaxial wafer according to claim 1, is characterized in that: the thickness of described GaN nucleating layer is 20 ~ 50nm; The thickness of described GaN resilient coating is 2 ~ 3 μm; The thickness of described GaN channel layer is 80 ~ 150nm; The thickness of described InAlN intrinsic layer is 6 ~ 15nm; The thickness of described GaN cap rock is 1 ~ 2nm.
4. epitaxial wafer according to claim 1, is characterized in that: the doped source of the C that described GaN nucleating layer and described GaN resilient coating adopt is CCl
4or C
2h
2.
5. epitaxial wafer according to claim 3, is characterized in that: in described InAlN intrinsic layer, the molar content of In is 20 ~ 30%.
6. a preparation method for the triode epitaxial wafer as described in any one of claim 1-5, is characterized in that, comprise the steps:
A is by the H of graphical sapphire substrate at 1050 ~ 1100 DEG C
2high temperature purification 5 ~ 10min under atmosphere;
Substrate after steps A purifies by B is cooled to 500 ~ 600 DEG C, at the GaN nucleating layer that Grown C adulterates;
C is at H
2under atmosphere, temperature is increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer grows the GaN resilient coating of C doping;
D at the temperature of 1000 ~ 1050 DEG C, growing GaN channel layer on described GaN resilient coating;
E grows InAlN intrinsic layer on described GaN channel layer;
F is growing GaN cap rock on described InAlN intrinsic layer.
7. preparation method according to claim 1, is characterized in that: in step B, adopts MOCVD technique to grow described GaN nucleating layer over the substrate.
8. preparation method according to claim 1, is characterized in that: the growth pressure of described GaN resilient coating is 30 ~ 50mbar.
9. preparation method according to claim 1, is characterized in that: the growth pressure of described InAlN intrinsic layer, GaN cap rock is 50 ~ 200mbar.
10. preparation method according to claim 1, is characterized in that: the growth temperature of described InAlN intrinsic layer, GaN cap rock is 980 ~ 1000 DEG C or 1000 ~ 1020 DEG C or 1020 ~ 1050 DEG C or 1050 ~ 1080 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510727930.1A CN105405872A (en) | 2015-10-30 | 2015-10-30 | Epitaxial wafer for triode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510727930.1A CN105405872A (en) | 2015-10-30 | 2015-10-30 | Epitaxial wafer for triode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105405872A true CN105405872A (en) | 2016-03-16 |
Family
ID=55471255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510727930.1A Pending CN105405872A (en) | 2015-10-30 | 2015-10-30 | Epitaxial wafer for triode and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068498A (en) * | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Insulating nitride film and semiconductor device using the same |
| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| US20140264455A1 (en) * | 2013-03-15 | 2014-09-18 | Transphorm Inc. | Carbon doping semiconductor devices |
-
2015
- 2015-10-30 CN CN201510727930.1A patent/CN105405872A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068498A (en) * | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Insulating nitride film and semiconductor device using the same |
| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| US20140264455A1 (en) * | 2013-03-15 | 2014-09-18 | Transphorm Inc. | Carbon doping semiconductor devices |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160316 |
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| RJ01 | Rejection of invention patent application after publication |