CN105390533A - GaN thin film material and preparation method thereof - Google Patents
GaN thin film material and preparation method thereof Download PDFInfo
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- CN105390533A CN105390533A CN201510725860.6A CN201510725860A CN105390533A CN 105390533 A CN105390533 A CN 105390533A CN 201510725860 A CN201510725860 A CN 201510725860A CN 105390533 A CN105390533 A CN 105390533A
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- film material
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- resilient coating
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- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000010409 thin film Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 28
- 239000010980 sapphire Substances 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 26
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000000746 purification Methods 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 abstract 3
- 238000010899 nucleation Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 18
- 230000008901 benefit Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a GaN thin film material and a preparation method thereof. An electronic device manufactured by the material is low in electric leakage, high in breakdown voltage and long in service life. The GaN thin film material comprises a substrate, a GaN nucleation layer, and a GaN buffer layer laminated sequentially, wherein the substrate is a patterned sapphire substrate; the GaN nucleation layer is a C-doped GaN nucleation layer; and the GaN buffer layer is a C-doped GaN buffer layer.
Description
Technical field
the present invention relates to a kind of GaN film material and preparation method thereof, particularly a kind ofly use GaN film material of image conversion Sapphire Substrate and preparation method thereof.
Background technology
thin-film material is widely used as the insulating barrier of the semi-conductor electronic device such as diode, triode, and for growing epitaxial structure sheaf thereon, tool has been widely used in the semiconductor device.Substrate at present for GaN film material mainly contains two kinds, i.e. Sapphire Substrate and silicon carbide substrates.But expensive due to carborundum, therefore the use of Sapphire Substrate is more extensive.The plain film shape Sapphire Substrate generally used in prior art due to its dislocation density higher, the electronic device leakage current that the GaN film material of gained is made is higher, easily puncture.
Summary of the invention
for the problems referred to above, the object of this invention is to provide a kind of GaN film material and preparation method thereof, the electronic device electric leakage of being made up of it is lower, puncture voltage is higher, the life-span is longer.
for solving the problems of the technologies described above, the technical solution used in the present invention is:
a kind of GaN film material, comprise the substrate, GaN nucleating layer, the GaN resilient coating that stack gradually, described substrate is graphical sapphire substrate, and described GaN nucleating layer is the GaN nucleating layer of C doping, and described GaN resilient coating is the GaN resilient coating of C doping.
preferably, the pattern height of described graphical sapphire substrate, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm.
preferably, the pattern height of described graphical sapphire substrate, width, gap are respectively 1.7 μm, 2.6 μm, 0.4 μm.
preferably, the pattern height of described graphical sapphire substrate, width, gap are respectively 1.2 μm, 1.8 μm, 0.1 μm.
preferably, the thickness of described GaN nucleating layer is 20 ~ 50nm.
more preferably, the thickness of described GaN resilient coating is 2 ~ 3 μm.
further, the doped source of C that described GaN nucleating layer and described GaN resilient coating adopt is CCl
4
or C
2
h
2
.
the another technical scheme that the present invention adopts is:
a preparation method for GaN film material as above, comprises the steps:
a is by the H of graphical sapphire substrate at 1050 ~ 1100 DEG C
2
high temperature purification 5 ~ 10min under atmosphere;
b is at H
2
substrate after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, at the GaN nucleating layer that Grown C adulterates;
c temperature is increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer grows the GaN resilient coating of C doping.
preferably, in step B, MOCVD technique is adopted to grow described GaN nucleating layer over the substrate.
preferably, described GaN resilient coating is the GaN resilient coating of C doping, and the growth pressure of described GaN resilient coating is 30 ~ 200mbar.
the present invention adopts above technical scheme, tool has the following advantages compared to existing technology: the GaN nucleating layer mixing C in graphical sapphire substrate growth has made the more semi-insulating GaN of high-crystal quality with the GaN resilient coating mixing C, made GaN film material crystal mass is better, compare the triode epitaxial wafer that conventional plain film Sapphire Substrate makes, dislocation density is by 1E9cm
-3
be reduced to 1E8cm
-3
.The benefit brought thus is that semi-insulating GaN epitaxial thin film material is applicable to making various types of electronic device more, and every electric property all has lifting, and as leakage current characteristic is better, puncture voltage is higher, and the life-span is longer.
Accompanying drawing explanation
in order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings, wherein:
fig. 1 is the structural representation of GaN film material of the present invention.
in above-mentioned accompanying drawing, 1, substrate; 2, GaN nucleating layer; 3, GaN resilient coating.
Embodiment
below preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be understood by those skilled in the art.
figure 1 shows that a kind of GaN film material of the present invention.Shown in composition graphs 1, this GaN film material comprises the substrate 1, GaN nucleating layer 2, the GaN resilient coating 3 that stack gradually.
described substrate 1 is graphical sapphire substrate (PSS) 1.The pattern height of graphical sapphire substrate 1, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm; Or the pattern height of graphical sapphire substrate 1, width, gap are respectively 1.7 μm, 2.6 μm, 0.4 μm; Or the pattern height of graphical sapphire substrate 1, width, gap are respectively 1.2 μm, 1.8 μm, 0.1 μm.
the GaN resilient coating 3 that GaN nucleating layer 2, the GaN resilient coating 3 that nucleating layer 2 adulterates for C adulterates for C.GaN nucleating layer 2 and GaN resilient coating 3 are all used C doping, and the common insulating barrier forming triode epitaxial wafer, forms semi-insulating GaN with image conversion Sapphire Substrate 1.The thickness of GaN nucleating layer 2 is the thickness of 20 ~ 50nm, GaN resilient coating 3 is 2 ~ 3 μm.The doped source of the C that GaN nucleating layer 2 and described GaN resilient coating 3 adopt is CCl
4
or C
2
h
2
.
a preparation method for above-mentioned GaN film material, comprises the steps:
a, provide graphical sapphire substrate 1, by the H of graphical sapphire substrate 1 at 1050 ~ 1100 DEG C
2
high temperature purification 5 ~ 10min under atmosphere;
b, at H
2
graphical sapphire substrate 1 after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, and graphical sapphire substrate 1 grows the GaN nucleating layer 2 of C doping;
c, temperature are increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer 2 grows the GaN resilient coating 3 of C doping.
in step B, MOCVD technique (i.e. metallo-organic compound chemical gaseous phase deposition technique, Metal-organicChemicalVaporDeposition) is adopted to grow described GaN nucleating layer 2 on described substrate 1.
in step C, the growth pressure of described GaN resilient coating 3 is 30 ~ 200mbar.
the semi insulating material crystal mass that the semi-insulating GaN thin-film material that graphical sapphire substrate (PSS) grows grows than plain film Sapphire Substrate is more excellent, its XRD102 is only about 300, the XRD102 comparing the semi-insulating GaN film of plain film growth reduces about 30%, and dislocation density is also by 1E9cm
-3
be reduced to 1E8cm
-3
, be more suitable for making power-type GaN electronic device.
above-described embodiment for technical conceive of the present invention and feature are described, is only a kind of preferred embodiment, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.The equivalence change that all Spirit Essences according to the present invention are done or modification, all should be encompassed within protection scope of the present invention.
Claims (10)
1. a GaN film material, comprise the substrate, GaN nucleating layer, the GaN resilient coating that stack gradually, it is characterized in that: described substrate is graphical sapphire substrate, described GaN nucleating layer is the GaN nucleating layer of C doping, and described GaN resilient coating is the GaN resilient coating of C doping.
2. GaN film material according to claim 1, is characterized in that: the pattern height of described graphical sapphire substrate, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm.
3. GaN film material according to claim 1, is characterized in that: the pattern height of described graphical sapphire substrate, width, gap are respectively 1.7 μm, 2.6 μm, 0.4 μm.
4. GaN film material according to claim 1, is characterized in that: the pattern height of described graphical sapphire substrate, width, gap are respectively 1.2 μm, 1.8 μm, 0.1 μm.
5. GaN film material according to claim 1, is characterized in that: the thickness of described GaN nucleating layer is 20 ~ 50nm.
6. GaN film material according to claim 1, is characterized in that: the thickness of described GaN resilient coating is 2 ~ 3 μm.
7. GaN film material according to claim 1, is characterized in that: the doped source of the C that described GaN nucleating layer and described GaN resilient coating adopt is CCl
4or C
2h
2.
8. a preparation method for the GaN film material as described in any one of claim 1-7, is characterized in that, comprises the steps:
A is by the H of graphical sapphire substrate at 1050 ~ 1100 DEG C
2high temperature purification 5 ~ 10min under atmosphere;
B is at H
2substrate after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, at the GaN nucleating layer that Grown C adulterates;
C temperature is increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer grows the GaN resilient coating of C doping.
9. preparation method according to claim 8, is characterized in that: in step B, adopts MOCVD technique to grow described GaN nucleating layer over the substrate.
10. preparation method according to claim 8, is characterized in that: the growth pressure of described GaN resilient coating is 30 ~ 200mbar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510725860.6A CN105390533A (en) | 2015-10-30 | 2015-10-30 | GaN thin film material and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510725860.6A CN105390533A (en) | 2015-10-30 | 2015-10-30 | GaN thin film material and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN105390533A true CN105390533A (en) | 2016-03-09 |
Family
ID=55422620
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|---|---|---|---|
| CN201510725860.6A Pending CN105390533A (en) | 2015-10-30 | 2015-10-30 | GaN thin film material and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611014A (en) * | 2017-09-01 | 2018-01-19 | 苏州云舒新材料科技有限公司 | A kind of preparation method of GaN thermoelectric film materials |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068498A (en) * | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Insulating nitride film and semiconductor device using the same |
| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| US20140264455A1 (en) * | 2013-03-15 | 2014-09-18 | Transphorm Inc. | Carbon doping semiconductor devices |
-
2015
- 2015-10-30 CN CN201510725860.6A patent/CN105390533A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068498A (en) * | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Insulating nitride film and semiconductor device using the same |
| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| US20140264455A1 (en) * | 2013-03-15 | 2014-09-18 | Transphorm Inc. | Carbon doping semiconductor devices |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611014A (en) * | 2017-09-01 | 2018-01-19 | 苏州云舒新材料科技有限公司 | A kind of preparation method of GaN thermoelectric film materials |
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Application publication date: 20160309 |