CN105405871A - Epitaxial wafer for diode and preparation method thereof - Google Patents
Epitaxial wafer for diode and preparation method thereof Download PDFInfo
- Publication number
- CN105405871A CN105405871A CN201510727177.6A CN201510727177A CN105405871A CN 105405871 A CN105405871 A CN 105405871A CN 201510727177 A CN201510727177 A CN 201510727177A CN 105405871 A CN105405871 A CN 105405871A
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- layer
- gan
- ngan
- resilient coating
- epitaxial wafer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 24
- 239000010980 sapphire Substances 0.000 claims abstract description 24
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- 238000000746 purification Methods 0.000 claims description 3
- 230000006911 nucleation Effects 0.000 abstract 3
- 238000010899 nucleation Methods 0.000 abstract 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000011435 rock Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides an epitaxial wafer for a diode and a preparation method thereof. A diode electronic device prepared by the epitaxial wafer has the advantages of low electric leakage, a high breakdown voltage and the long service life. The epitaxial wafer for the diode comprises a substrate, a GaN nucleation layer, a GaN buffer layer, an AlGaN layer, a heavily doped nGaN layer and a lightly doped nGaN layer which are successively stacked; and the substrate is a graphical sapphire substrate, the GaN nucleation layer is a C-doped GaN nucleation layer, the GaN buffer layer is a C-doped GaN buffer layer, a doping concentration of the heavily doped nGaN layer is 1E19cm<-3>, and a doping concentration of the lightly doped nGaN layer is 5E15-2E16cm<-3>.
Description
Technical field
the present invention relates to a kind of diode expitaxial sheet and preparation method thereof, particularly a kind of diode expitaxial sheet using image conversion Sapphire Substrate and preparation method thereof.
Background technology
substrate at present for the epitaxial wafer of diode mainly contains two kinds, i.e. Sapphire Substrate and silicon carbide substrates.But expensive due to carborundum, therefore the use of Sapphire Substrate is more extensive.The plain film shape Sapphire Substrate generally used in prior art is higher due to its dislocation density, and the diode electronic device creepage made is higher, easily puncture.
Summary of the invention
for the problems referred to above, the object of this invention is to provide a kind of diode epitaxial wafer and preparation method thereof, the diode electronic element leakage be made up of it is lower, puncture voltage is higher, the life-span is longer.
for solving the problems of the technologies described above, the technical solution used in the present invention is:
a kind of diode epitaxial wafer, comprise the substrate, GaN nucleating layer, GaN resilient coating, AlGaN layer, heavy doping nGaN layer, the light dope nGaN layer that stack gradually, described substrate is graphical sapphire substrate, described GaN nucleating layer is the GaN nucleating layer of C doping, and described GaN resilient coating is the GaN resilient coating of C doping.
preferably, the doping content of described heavy doping nGaN layer is 1E19cm
-3
, the doping content of described light dope nGaN layer is 5E15 ~ 2E16cm
-3
.
preferably, the pattern height of described graphical sapphire substrate, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm, or are respectively 1.7 μm, 2.6 μm, 0.4 μm, or are respectively 1.2 μm, 1.8 μm, 0.1 μm.
preferably, described GaN nucleating layer is the GaN nucleating layer of C doping, and the thickness of GaN nucleating layer is 20 ~ 50nm; Described GaN resilient coating is the GaN resilient coating of C doping, and the thickness of described GaN resilient coating is 2 ~ 3 μm; The thickness of described AlGaN layer is 80 ~ 150nm; The thickness of described heavy doping nGaN layer is 2.5 ~ 3 μm; The thickness of described light dope nGaN layer is 6 ~ 10 μm.
preferably, the doped source of C that described GaN nucleating layer and described GaN resilient coating adopt is CCl
4
or C
2
h
2
.
preferably, in described AlGaN layer, the molar content of Al is 8 ~ 15%.
the another technical scheme that the present invention adopts is:
a preparation method for diode epitaxial wafer as above, comprises the steps:
a is by the H of graphical sapphire substrate at 1050 ~ 1100 DEG C
2
high temperature purification 5 ~ 10min under atmosphere;
b is at H
2
substrate after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, at the GaN nucleating layer that Grown C adulterates;
c temperature is increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer grows the GaN resilient coating of C doping;
d, at the temperature of 1000 ~ 1050 DEG C, described GaN resilient coating grows AlGaN layer;
e grows heavy doping nGaN layer in described AlGaN layer;
f grows light dope nGaN layer on described heavy doping nGaN layer.
preferably, described GaN resilient coating is the GaN resilient coating of C doping, and the growth pressure of described GaN resilient coating is 30 ~ 50mbar.
preferably, the growth pressure of described heavy doping nGaN layer, light dope nGaN layer is 50 ~ 70mbar or 70 ~ 100mbar or 100 ~ 133mbar or 133 ~ 166mbar or 166 ~ 200mbar.
preferably, the growth temperature of described heavy doping nGaN layer, light dope nGaN layer is 980 ~ 1000 DEG C or 1000 ~ 1020 DEG C or 1020 ~ 1050 DEG C or 1050 ~ 1080 DEG C.
the present invention adopts above technical scheme, tool has the following advantages compared to existing technology: the GaN nucleating layer mixing C in graphical sapphire substrate growth has made the more semi-insulating GaN of high-crystal quality with the GaN resilient coating mixing C, made diode epitaxial slice crystal mass is better, compare the diode expitaxial sheet that conventional plain film Sapphire Substrate makes, dislocation density is by 1E9cm
-3
be reduced to 5E7cm
-3
, and the diode electronic device creepage made of this epitaxial wafer is lower, puncture voltage is higher, and the life-span is longer.
Accompanying drawing explanation
in order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings, wherein:
fig. 1 is the structural representation of diode epitaxial wafer of the present invention.
in above-mentioned accompanying drawing, 1, substrate; 2, GaN nucleating layer; 3, GaN resilient coating; 4, AlGaN layer; 5, heavy doping nGaN layer; 6, light dope nGaN layer.
Embodiment
below preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be understood by those skilled in the art.
figure 1 shows that a kind of diode epitaxial wafer of the present invention.Shown in composition graphs 1, this diode epitaxial wafer comprises the substrate 1, GaN nucleating layer 2, GaN resilient coating 3, AlGaN layer 4, heavy doping nGaN layer 5, the light dope nGaN layer 6 that stack gradually.
described substrate 1 is graphical sapphire substrate (PSS) 1.The pattern height of graphical sapphire substrate 1, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm; Or the pattern height of graphical sapphire substrate 1, width, gap are respectively 1.7 μm, 2.6 μm, 0.4 μm; Or the pattern height of graphical sapphire substrate 1, width, gap are respectively 1.2 μm, 1.8 μm, 0.1 μm.
the GaN resilient coating 3 that GaN nucleating layer 2, the GaN resilient coating 3 that nucleating layer 2 adulterates for C adulterates for C.GaN nucleating layer 2 and GaN resilient coating 3 are all used C doping, and the common insulating barrier forming triode epitaxial wafer, forms semi-insulating GaN with image conversion Sapphire Substrate 1.The thickness of GaN nucleating layer 2 is the thickness of 20 ~ 50nm, GaN resilient coating 3 is 2 ~ 3 μm.The doped source of the C that GaN nucleating layer 2 and described GaN resilient coating 3 adopt is CCl
4
or C
2
h
2
.
layer 4, heavy doping nGaN layer 5, light dope nGaN layer 6 form the epitaxial structure layer 4 of triode epitaxial wafer.Wherein, the thickness of AlGaN layer 4 is 80 ~ 150nm, and the thickness of heavy doping nGaN layer 5 is 2.5 ~ 3 μm, and the thickness of light dope nGaN layer 6 is 6 ~ 10 μm.In AlGaN layer, the molar content of Al is 8 ~ 15%.The doping content of described heavy doping nGaN layer is 1E19cm
-3
, the doping content of described light dope nGaN layer is 5E15 ~ 2E16cm
-3
.
a preparation method for above-mentioned diode epitaxial wafer, comprises the steps:
a, provide graphical sapphire substrate 1, by the H of graphical sapphire substrate 1 at 1050 ~ 1100 DEG C
2
high temperature purification 5 ~ 10min under atmosphere;
b, at H
2
graphical sapphire substrate 1 after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, and graphical sapphire substrate 1 grows the GaN nucleating layer 2 of C doping;
c, temperature are increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer 2 grows the GaN resilient coating 3 of C doping;
d, at the temperature of 1000 ~ 1050 DEG C, described GaN resilient coating 3 grows AlGaN layer 4, AlGaN layer 4 is covered on GaN resilient coating 3;
e, described AlGaN layer 4 grows heavy doping nGaN layer 5, heavy doping nGaN layer 5 be covered on AlGaN layer 4;
f, described heavy doping nGaN layer 5 grows light dope nGaN layer 6, light dope nGaN layer 6 be covered on heavy doping nGaN layer 5.
in step B, MOCVD technique (i.e. metallo-organic compound chemical gaseous phase deposition technique, Metal-organicChemicalVaporDeposition) is adopted to grow described GaN nucleating layer 2 on described substrate 1.
in step C, the growth pressure of described GaN resilient coating 3 is 30 ~ 50mbar.
in the step e, F, G of growing epitaxial structure sheaf 4, the growth pressure of heavy doping nGaN layer 5, light dope nGaN layer 6 is 50 ~ 70mbar; Or the growth pressure of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 70 ~ 100mbar; Or the growth pressure of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 100 ~ 133mbar; Or the growth pressure of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 133 ~ 166mbar; Or the growth pressure of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 166 ~ 200mbar.
the growth temperature of heavy doping nGaN layer 5, light dope nGaN layer 6 is 980 ~ 1000 DEG C; Or the growth temperature of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 1000 ~ 1020 DEG C; Or the growth temperature of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 1020 ~ 1050 DEG C; Or the growth temperature of heavy doping nGaN layer 5, light dope nGaN layer 6, GaN cap rock 44 is 1050 ~ 1080 DEG C.
compare the triode epitaxial wafer that plain film Sapphire Substrate is made, the present invention in image conversion Sapphire Substrate, deposit the GaN nucleating layer mixing C and the GaN resilient coating mixing C forms semi-insulating GaN, and the dislocation density of the diode epitaxial slice made on this basis is by 1E9cm of the prior art
-3
be reduced to 5E7cm
-3
.
above-described embodiment for technical conceive of the present invention and feature are described, is only a kind of preferred embodiment, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.The equivalence change that all Spirit Essences according to the present invention are done or modification, all should be encompassed within protection scope of the present invention.
Claims (10)
1. a diode epitaxial wafer, comprise the substrate, GaN nucleating layer, GaN resilient coating, AlGaN layer, heavy doping nGaN layer, the light dope nGaN layer that stack gradually, it is characterized in that: described substrate is graphical sapphire substrate, described GaN nucleating layer is the GaN nucleating layer of C doping, and described GaN resilient coating is the GaN resilient coating of C doping.
2. diode expitaxial sheet according to claim 1, is characterized in that: the doping content of described heavy doping nGaN layer is 1E19cm
-3, the doping content of described light dope nGaN layer is 5E15 ~ 2E16cm
-3.
3. epitaxial wafer according to claim 1, it is characterized in that: the pattern height of described graphical sapphire substrate, width, gap are respectively 1.6 μm, 2.4 μm, 0.6 μm, or be respectively 1.7 μm, 2.6 μm, 0.4 μm, or be respectively 1.2 μm, 1.8 μm, 0.1 μm.
4. epitaxial wafer according to claim 1, is characterized in that: the thickness of described GaN nucleating layer is 20 ~ 50nm; The thickness of described GaN resilient coating is 2 ~ 3 μm; The thickness of described AlGaN layer is 80 ~ 150nm; The thickness of described heavy doping nGaN layer is 2.5 ~ 3 μm; The thickness of described light dope nGaN layer is 6 ~ 10 μm.
5. epitaxial wafer according to claim 1, is characterized in that: the doped source of the C that described GaN nucleating layer and described GaN resilient coating adopt is CCl
4or C
2h
2.
6. epitaxial wafer according to claim 1, is characterized in that: in described AlGaN layer, the molar content of Al is 8 ~ 15%.
7. a preparation method for the diode epitaxial wafer as described in any one of claim 1-6, is characterized in that, comprise the steps:
A is by the H of graphical sapphire substrate at 1050 ~ 1100 DEG C
2high temperature purification 5 ~ 10min under atmosphere;
B is at H
2substrate after steps A being purified under atmosphere is cooled to 500 ~ 600 DEG C, at the GaN nucleating layer that Grown C adulterates;
C temperature is increased to 1040 ~ 1080 DEG C, and described GaN nucleating layer grows the GaN resilient coating of C doping;
D, at the temperature of 1000 ~ 1050 DEG C, described GaN resilient coating grows AlGaN layer;
E grows heavy doping nGaN layer in described AlGaN layer;
F grows light dope nGaN layer on described heavy doping nGaN layer.
8. preparation method according to claim 7, is characterized in that: the growth pressure of described GaN resilient coating is 30 ~ 50mbar.
9. preparation method according to claim 7, is characterized in that: the growth pressure of described heavy doping nGaN layer, light dope nGaN layer is 50 ~ 200mbar.
10. preparation method according to claim 7, is characterized in that: the growth temperature of described heavy doping nGaN layer, light dope nGaN layer is 980 ~ 1000 DEG C or 1000 ~ 1020 DEG C or 1020 ~ 1050 DEG C or 1050 ~ 1080 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510727177.6A CN105405871A (en) | 2015-10-30 | 2015-10-30 | Epitaxial wafer for diode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510727177.6A CN105405871A (en) | 2015-10-30 | 2015-10-30 | Epitaxial wafer for diode and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105405871A true CN105405871A (en) | 2016-03-16 |
Family
ID=55471254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510727177.6A Pending CN105405871A (en) | 2015-10-30 | 2015-10-30 | Epitaxial wafer for diode and preparation method thereof |
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|---|---|
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068498A (en) * | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Insulating nitride film and semiconductor device using the same |
| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| US20140264455A1 (en) * | 2013-03-15 | 2014-09-18 | Transphorm Inc. | Carbon doping semiconductor devices |
-
2015
- 2015-10-30 CN CN201510727177.6A patent/CN105405871A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000068498A (en) * | 1998-08-21 | 2000-03-03 | Nippon Telegr & Teleph Corp <Ntt> | Insulating nitride film and semiconductor device using the same |
| CN101266999A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| US20140264455A1 (en) * | 2013-03-15 | 2014-09-18 | Transphorm Inc. | Carbon doping semiconductor devices |
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Application publication date: 20160316 |