CN105405782A - Monitoring method for source-drain epitaxial technology - Google Patents
Monitoring method for source-drain epitaxial technology Download PDFInfo
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- CN105405782A CN105405782A CN201410409038.4A CN201410409038A CN105405782A CN 105405782 A CN105405782 A CN 105405782A CN 201410409038 A CN201410409038 A CN 201410409038A CN 105405782 A CN105405782 A CN 105405782A
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Abstract
The invention provides a monitoring method for the source-drain epitaxial technology, and the method comprises the steps: providing a quality target value of a substrate after the epitaxial forming of source-drain regions, and providing a tolerance range of the quality target value; providing the substrate, forming source-drain trenches on the substrate, and carrying out the epitaxial forming of source-drain regions in the source-drain trenches; obtaining the quality of the substrate after the epitaxial forming of source-drain regions; and judging whether the quality is within the tolerance range of the quality target value or not. The method is visual and quick, causes no damage to a wafer, does not need a specific testing structure, and is suitable for the effective monitoring of the epitaxial manufacturing process of the source-drain regions, so as to effectively control the epitaxial forming quality of the source-drain regions.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of monitoring method of source and drain epitaxy technique.
Background technology
Along with the development of integrated circuit technique, higher requirement be it is also proposed to the performance of device.At present, except the application of high k/ metal gate engineering, 45 nm technology node also introduce source and drain stress engineering, improves the mobility of charge carrier further.
Source and drain stress engineering, i.e. source and drain trench process, its main technological steps comprises: after formation grid structure 110, come out needing the position of carrying out source and drain strain adjusted by photoetching, can dry etching or wet etch techniques be passed through, form groove 120, the silicon trench 120 for SigMa shape formed in the substrate of usual crystalline silicon, as shown in Figure 1, this silicon trench shape causes silicon (100) and (111) selective corrosion due to wet chemical etching technique; Then, by selective epitaxial technology, for PMOS, the epitaxial growth of the source-drain area 130 of selectivity SiGe is carried out in silicon trench, because Ge atomic radius is greater than silicon, therefore the SiGe of extension to PMOS ditch to generation action of compressive stress, thus will promote the hole mobility of PMOS; For NMOS, in silicon trench, carry out the epitaxial growth of the source-drain area 130 of selectivity SiC, to improve NMOS electron mobility, as shown in Figure 2.
After wet chemical etching technique goes out silicon groove, the source-drain area of effect of stress is formed by extension, as SiGe or SiC, because now grid is formed, CMP can not be adopted to carry out planarization, for different designs, the maintaining an equal level with substrate of having of source-drain area that extension is formed, have higher than substrate, namely promote source and drain, and the uniformity of source-drain area thickness cannot be realized by flatening process, this effectively monitors the epitaxy technique of source and drain with regard to needing.
For this reason, needs propose intuitively and are applicable to the quick monitoring method of volume production, to judge whether source and drain epitaxy technique reaches technological requirement.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency, provides a kind of monitoring method of source and drain epitaxy technique, is applicable to volume production monitoring, fast effectively.
For this reason, the invention provides following technical scheme:
A monitoring method for source and drain epitaxy technique, comprising:
Quality target value and its range of tolerable variance of the substrate after extension formation source-drain area are provided;
Substrate is provided, substrate is formed source and drain groove, and extension forms source-drain area in source and drain groove;
Obtain the quality of the substrate after extension formation source-drain area;
Judge this quality whether in the range of tolerable variance of quality target value.
Optionally, provide the step of quality target value to be specially: the quality of substrate after extension forms source-drain area measuring specific products, by thickness and/or the crystal structure of this substrate of scanning electron microscope analysis, determine that the quality of this substrate is quality target value.
Optionally, provide the step of quality tolerance to be specially: the quality of other multiple batches of substrates after extension forms source-drain area measuring this specific products, obtain the mass change data after extension formation source-drain area, to determine range of tolerable variance.
In addition, present invention also offers a kind of monitoring method of source and drain epitaxy technique, comprising:
Extension is provided to form the forward and backward desired value of poor quality of source-drain area and its range of tolerable variance;
Substrate is provided, substrate is formed source and drain groove, obtain the first quality of this substrate;
In this source and drain groove, extension forms source-drain area, obtains the second quality of this substrate;
Judge the of poor quality whether in the range of tolerable variance of desired value of poor quality of the second quality and the first quality.
Optionally, the step of desired value of poor quality is provided to be specially: the substrate measuring specific products forms the forward and backward quality of source-drain area in extension, by thickness and/or the crystal structure of this substrate of scanning electron microscope analysis, determine that this substrate forms source-drain area in extension forward and backward of poor quality for desired value of poor quality.
Optionally, the step of tolerance of poor quality is provided to be specially: other the multiple batches of substrates measuring this specific products are forming the forward and backward quality of source-drain area in extension, obtain extension and form the forward and backward delta data of poor quality of source-drain area, to determine range of tolerable variance.
The monitoring method of the source and drain epitaxy technique that the embodiment of the present invention provides, the quality of source-drain area back substrate is formed by measuring extension, carry out indirect monitoring source and drain epitaxy technique and whether reach requirement, the method is directly perceived, fast and wafer is not damaged, also without the need to specific test structure, effective monitoring to source and drain epitaxial manufacture process when being applicable to volume production, so that the quality effectively controlling that extension forms source and drain.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1-2 is the device schematic cross-section in source and drain stress engineering technical process;
Fig. 3 is the schematic flow sheet of the monitoring method of source and drain epitaxy technique according to the embodiment of the present invention one;
Fig. 4-5 is the schematic cross-section of device in the process according to the method monitoring source and drain epitaxy technique of the embodiment of the present invention one;
Fig. 6 is the schematic flow sheet of the monitoring method of source and drain epitaxy technique according to the embodiment of the present invention two.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In the present invention, the monitoring method of the source and drain epitaxy technique provided, by measuring the quality after source and drain extension is formed, carry out indirect monitoring source and drain epitaxy technique and whether reach requirement, this is directly perceived, fast and wafer is not damaged, also without the need to specific test structure, the effective monitoring to source and drain epitaxy technique is applicable to, effectively to control the quality that extension forms source and drain.
For a better understanding of the present invention, be described below with reference to specific embodiment.
Embodiment one
Describe the quality that forms the wafer after source-drain area with extension in detail below with reference to Fig. 3-5 for target and carry out the embodiment of monitoring.
First, quality target value and its range of tolerable variance of the substrate after extension formation source-drain area are provided.
In the device fabrication of common source and drain stress engineering, shown in figure 4, first, grid structure 210 is formed on the substrate 200; Then, the etching of source and drain groove 220 is carried out; Then, in source and drain groove, extension forms source-drain area 230, shown in figure 5.
In embodiments of the present invention, described substrate, i.e. wafer can be Si substrate, SOI (silicon-on-insulator, SiliconOnInsulator) or GOI (germanium on insulator, GermaniumOnInsulator) etc.In other embodiments, described Semiconductor substrate can also be the substrate comprising other elemental semiconductors or compound semiconductor, such as GaAs or InP etc., can also be laminated construction.
Wherein, grid structure 210 generally includes gate dielectric layer and gate electrode, can further include side wall, grid structure can be the structure of high k/ metal gate, namely gate dielectric layer is high K medium material, gate electrode is metal gate electrode, high K medium material, such as compare with silica, there is material or other suitable dielectric materials of high-k, high K medium material is hafnium base oxide such as, HFO2, HfSiO, HfSiON, HfTaO, HfTiO etc., metal gate electrode can be one or more layers structure, metal material or polysilicon or their combination can be comprised, metal material is Ti such as, TiAl
x, TiN, TaN
x, HfN, TiC
x, TaC
xetc..
In the present embodiment, described substrate 200 is silicon substrate, after adopting wet etching, defines the source and drain groove 220 of similar hexagonal opening.By selective epitaxial technology, for PMOS, can selectivity SiGe epitaxial growth be carried out in the trench, for NMOS, carry out selectivity SiC epitaxial growth in the trench, thus form source-drain area 230, as shown in Figure 5.
In the present embodiment, the wafer selecting specific model product is sampling substrate, and measures its quality after extension forms source-drain area, this substrate has been formed with grid structure and source-drain area, as shown in Figure 5; Then, analyzed by scanning electron microscopy (SEM) or transmission electron microscope (TEM) parameter to the source-drain area of this substrate, as whether the thickness of source-drain area in the secure execution mode (sem and the crystalline state of crystal structure meet the requirements, for satisfactory substrate, determine that its quality is quality target value.
Then, measure the quality of other multiple batches of wafers after extension forms source-drain area of the type product, like this, obtain the mass change data of the substrate after extension formation source-drain area, according to these qualitative datas, determine quality range of tolerable variance (spec).
Also, after can obtaining the quality of multiple wafer, quality target value and the quality range of tolerable variance of wafer is obtained according to other algorithm.
Then, provide substrate, substrate is formed source and drain groove, and extension forms source-drain area in source and drain groove.
In this step, namely the wafer of the volume production of above-mentioned specific model product is monitored.The determination of the quality of sampling substrate in the same step, the wafer of volume production is formed source and drain groove, and in source and drain groove, epitaxial growth forms source-drain area, shown in figure 5.
Then, obtain source and drain groove formed after the quality of substrate.
The acquisition of above substrate quality, can be obtained by high-precision quality measurement equipment.
Finally, this quality is judged whether in the range of tolerable variance of quality target value.
If volume production wafer quality is in the range of tolerable variance of quality target value, can think that source and drain epitaxy technique reaches technological requirement, otherwise, can think that source and drain epitaxy technique does not reach technological requirement, when continuous appearance does not reach the wafer of technological requirement, can analyze further, and process conditions are adjusted.
Embodiment two
Describe in detail below with reference to Fig. 4-6 and to form with extension that source-drain area is forward and backward of poor qualityly carries out the embodiment of monitoring for target.
First, extension is provided to form the forward and backward desired value of poor quality of source-drain area and its range of tolerable variance.
In the device fabrication of common source and drain stress engineering, shown in figure 4, first, grid structure 210 is formed on the substrate 200; Then, the etching of source and drain groove 220 is carried out; Then, in source and drain groove, extension forms source-drain area 230, shown in figure 5.
With embodiment one, grid structure can be high k/ metal-gate structures.In the present embodiment, after selecting the wafer of specific model for sampling wafer, first obtained before carrying out extension formation source-drain area, as shown in Figure 4, namely form the first quality of the wafer after source and drain groove 220; Then, carry out epitaxial growth, as shown in Figure 5, after forming source-drain area 230, obtain the second quality of wafer; Then, analyzed by scanning electron microscopy (SEM) or transmission electron microscope (TEM) parameter to the source-drain area of this substrate, as whether the thickness of source-drain area in the secure execution mode (sem and the crystalline state of crystal structure meet the requirements, for satisfactory substrate, determine that its quality is quality target value.
Then, other the multiple batches of wafers measuring the type product form the forward and backward quality of source-drain area in extension, like this, obtain extension and form the forward and backward delta data of poor quality of source-drain area, according to these ropy data, determine range of tolerable variance of poor quality (spec).
Also after the quality obtaining multiple wafer, the desired value of poor quality of wafer and range of tolerable variance of poor quality can be obtained according to other algorithm.
Then, the monitoring of the source and drain epitaxy technique of the volume production wafer of this model is carried out.
Substrate is provided, substrate is formed source and drain groove, obtain the first quality of this substrate.
For the volume production wafer of the type, first obtain the first quality that extension forms the substrate before source-drain area, namely after formation source and drain groove 220, before in source and drain groove, extension forms source-drain area, the quality of this substrate, shown in figure 4.
Then, in this source and drain groove, extension forms source-drain area, obtains the second quality of this substrate.
This second quality, after namely in source and drain groove, extension forms source-drain area 230, before next manufacturing process starts, shown in figure 5, the quality of substrate.
Finally, the of poor quality whether in the range of tolerable variance of desired value of poor quality of the second quality and the first quality is judged.
If volume production wafer quality is in the range of tolerable variance of quality target value, can think that source and drain epitaxy technique reaches technological requirement, otherwise, can think that source and drain epitaxy technique does not reach technological requirement, when continuous appearance does not reach the wafer of technological requirement, can analyze further, and process conditions are adjusted.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (6)
1. a monitoring method for source and drain epitaxy technique, is characterized in that, comprising:
Quality target value and its range of tolerable variance of the substrate after extension formation source-drain area are provided;
Substrate is provided, substrate is formed source and drain groove, and extension forms source-drain area in source and drain groove;
Obtain the quality of the substrate after extension formation source-drain area;
Judge this quality whether in the range of tolerable variance of quality target value.
2. monitoring method according to claim 1, it is characterized in that, the step of quality target value is provided to be specially: the quality of substrate after extension forms source-drain area measuring specific products, by thickness and/or the crystal structure of this substrate of scanning electron microscope analysis, determine that the quality of this substrate is quality target value.
3. monitoring method according to claim 2, it is characterized in that, there is provided the step of quality tolerance to be specially: the quality of other multiple batches of substrates after extension forms source-drain area measuring this specific products, obtain the mass change data after extension formation source-drain area, to determine range of tolerable variance.
4. a monitoring method for source and drain epitaxy technique, is characterized in that, comprising:
Extension is provided to form the forward and backward desired value of poor quality of source-drain area and its range of tolerable variance;
Substrate is provided, substrate is formed source and drain groove, obtain the first quality of this substrate;
In this source and drain groove, extension forms source-drain area, obtains the second quality of this substrate;
Judge the of poor quality whether in the range of tolerable variance of desired value of poor quality of the second quality and the first quality.
5. monitoring method according to claim 4, it is characterized in that, the step of desired value of poor quality is provided to be specially: the substrate measuring specific products forms the forward and backward quality of source-drain area in extension, by thickness and/or the crystal structure of this substrate of scanning electron microscope analysis, determine that this substrate forms source-drain area in extension forward and backward of poor quality for desired value of poor quality.
6. monitoring method according to claim 5, it is characterized in that, the step of tolerance of poor quality is provided to be specially: other the multiple batches of substrates measuring this specific products form the forward and backward quality of source-drain area in extension, obtain extension and form the forward and backward delta data of poor quality of source-drain area, to determine range of tolerable variance.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7402207B1 (en) * | 2004-05-05 | 2008-07-22 | Advanced Micro Devices, Inc. | Method and apparatus for controlling the thickness of a selective epitaxial growth layer |
| US20090280579A1 (en) * | 2008-05-12 | 2009-11-12 | Advanced Micro Devices, Inc. | Method of controlling embedded material/gate proximity |
| CN102810492A (en) * | 2011-06-03 | 2012-12-05 | 中国科学院微电子研究所 | Processing procedure monitoring method after CMP for metal gate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7402207B1 (en) * | 2004-05-05 | 2008-07-22 | Advanced Micro Devices, Inc. | Method and apparatus for controlling the thickness of a selective epitaxial growth layer |
| US20090280579A1 (en) * | 2008-05-12 | 2009-11-12 | Advanced Micro Devices, Inc. | Method of controlling embedded material/gate proximity |
| CN102810492A (en) * | 2011-06-03 | 2012-12-05 | 中国科学院微电子研究所 | Processing procedure monitoring method after CMP for metal gate |
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