CN105397299A - Treatment method and device for surface oxidation films of tantalum capacitor tantalum wires - Google Patents
Treatment method and device for surface oxidation films of tantalum capacitor tantalum wires Download PDFInfo
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- CN105397299A CN105397299A CN201510947082.5A CN201510947082A CN105397299A CN 105397299 A CN105397299 A CN 105397299A CN 201510947082 A CN201510947082 A CN 201510947082A CN 105397299 A CN105397299 A CN 105397299A
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- tantalum
- tantalum wire
- demoulding
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- electric capacity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
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Abstract
The invention discloses a treatment method and device for surface oxidation films of tantalum capacitor tantalum wires. The treatment method and device are used for conducting surface oxidation film treatment on the circumferential faces of two or more titanium wires welded to a tantalum capacitor. The tantalum capacitor is welded to a steel bar. The treatment method includes the following steps that firstly, the steel bar is fixed to a stepping platform; secondly, the circumferential faces of the titanium wires are divided into first areas, second areas, third areas and fourth areas; thirdly, a laser spot radiation scanning method is used for demolding the first areas and the second areas in sequence; fourthly, the steel bar and the titanium wires on the steel bar are overturned and fixed to the stepping platform; and fifthly, the laser spot radiation scanning method is used for demolding the third areas and the fourth areas in sequence. A tool clamp for demolding the tantalum wires is high in universality and good in demolding effect, and the quality of products which are machined subsequently is improved.
Description
Technical field
The present invention relates to technical field of electronic components, particularly relate to a kind of processing method and device of tantalum electric capacity tantalum wire surface film oxide.
Background technology
Tantalum wire is the anode tap of tantalum electric capacity, be located on smooth piece, in the fabrication processing of tantalum electric capacity, need to carry out infiltration manganese nitrate solution (or other materials to smooth piece of tantalum electric capacity, as macromolecular material), swash along tantalum wire to prevent manganese nitrate solution (or Polymer Solution), can be thrown in advance into Teflon pad when being welded to technique steel bar, when avoiding thermal decomposition, tantalum wire forming oxide-film (manganese dioxide or polymeric oxide) and causing anode and cathode short circuit.
But in actual production, although throw into Teflon pad, also better cannot avoid phenomenon tantalum wire not generating oxide-film, the tantalum electric capacity of especially large shell number, because the size of itself is just large, the possibility that oxide-film produces is larger.
To cut off from steel bar at tantalum block for this reason and be welded to moulding again and go forward, technique can increase the treatment measures of one removal tantalum wire oxide-film, traditional way is mechanical knifing process, namely carries out knifing process to the oxide-film on tantalum electric capacity tantalum wire periphery.The tantalum electric capacity of different size, the frock clamp of knifing also will do corresponding coupling, be difficult to general, and demoulding effect is also good not, can not realize demoulding clean, problem of faulty soldering when can not effectively prevent anode and cathode short circuit and tantalum wire to be welded on moulding.
Disclosing only for auxiliary understanding inventive concept of the present invention and technical scheme of above background technology content, it must not belong to the prior art of present patent application, show that not having tangible proof the applying date of foregoing in present patent application is in disclosed situation, above-mentioned background technology should not be used for novelty and the creativeness of evaluating the application.
Summary of the invention
The object of the invention is the processing method and the device that propose a kind of tantalum electric capacity tantalum wire surface film oxide, with solve that above-mentioned prior art exists to the tantalum electric capacity frock clamp of different size be difficult to general, demoulding effect is bad and have a strong impact on the technical problem of product quality.
For this reason, the present invention proposes a kind of processing method of tantalum electric capacity tantalum wire surface film oxide, and for carrying out surface film oxide process to the periphery of the two or more tantalum wire be welded on tantalum electric capacity, described tantalum condenser welding is connected on steel bar, comprises the steps:
S1: described steel bar is fixed on stepping platform;
S2: tantalum wire periphery is divided into first area, second area, the 3rd region and the 4th region;
S3: adopt the method for laser fixed fire scanning successively to carry out demoulding to described first area, second area;
S4: described steel bar is overturn together with the tantalum wire on it and is fixed on described stepping platform;
S5: adopt the method for laser fixed fire scanning successively to carry out demoulding to described 3rd region, the 4th region.
According to embodiment, the processing method that the present invention proposes can also have following technical characteristic:
In described step S3, carry out contraposition demoulding in the journey of going of described stepping platform to described first area, backhaul carries out contraposition demoulding to described second area; In described step S5, carry out contraposition demoulding in the journey of going of described stepping platform to described 3rd region, backhaul carries out contraposition demoulding to described 4th region.
The method of described laser fixed fire scanning is carry out demoulding by laser head to the described tantalum wire stepping to fixed fire position, and described fixed fire position is the projected position of described laser head.
Described laser head is greater than the radius of described tantalum wire in the distance of the radial scan of described tantalum wire.
Described laser head is the length that described tantalum wire treats demoulding in the length of the axial scan of described tantalum wire.
Described laser is the solid-state laser that energy effects on surface oxide does micro Process ablation.
The invention allows for a kind of tantalum electric capacity tantalum wire surface oxidation membrane treatment appts, comprise stepping platform, and the laser fixed fire scanning element matched with stepping platform, the direction of the laser head adjustable fixed fire scanning of described laser fixed fire scanning element and angle.
According to embodiment, the treating apparatus that the present invention proposes can also have following technical characteristic:
Described stepping platform is provided with the magnetic fixture for fixing described steel bar.
Described stepping platform be straight line stepping module.
The angle of described laser head can adjust arbitrarily between 0-180 °.
The beneficial effect that the present invention is compared with the prior art comprises: the present invention is that knifing process is compared compared to adopting machinery in prior art, laser is used to carry out etch processes to the oxide-film on tantalum wire circumferential surface, substantially increase the operability of demoulding, be applicable to carry out demoulding to the tantalum electric capacity of various different size, avoid the uncurrent problem of frock clamp owing to adopting mechanical demoulding to exist; Further, in order to reach good membrane removal effect, the present invention adopts subregion method for demoulding, can reach 360 ° of omnibearing demoulding effects, totally and thoroughly.
In preferred version, carry out in the process of demoulding in employing laser subregion, the all tantalum wires on stepping platform courses steel bar are adopted to be stepped through the fixed fire position of laser demoulding one by one, effectively complete the membrane removal to all tantalum wires, go journey can complete the membrane removal in first area and the 3rd region, backhaul can complete the membrane removal in second area and the 3rd region, has adopted rotatable laser head, make the scanning pattern of laser adjustable, demoulding better effects if.
Accompanying drawing explanation
Fig. 1 is the process flow figure of the specific embodiment of the invention one;
Fig. 2 is the structural representation of the treating apparatus of the specific embodiment of the invention one.
Fig. 3 is the structural representation of the stepping platform of the specific embodiment of the invention one.
Fig. 4 is the close-up schematic view of the specific embodiment of the invention one Fig. 1.
Fig. 5 is the specific embodiment of the invention one tantalum wire subregion schematic diagram.
Fig. 6 is the working state figure of the specific embodiment of the invention one.
1 stepping platform
2 laser fixed fire scanning elements
3 steel bars
4 tantalum wires
5 smooth pieces
6,7 fixed fire positions
41 first areas
42 second areas
43 the 3rd regions
44 the 4th regions
Detailed description of the invention
Contrast accompanying drawing below in conjunction with detailed description of the invention the present invention is described in further detail.It is emphasized that following explanation is only exemplary, instead of in order to limit the scope of the invention and apply.
With reference to the following drawings 1-6, will describe the embodiment of non-limiting and nonexcludability, wherein identical Reference numeral represents identical parts, unless stated otherwise.
Embodiment one:
As shown in figures 1 to 6, present embodiment discloses a kind of processing method of tantalum electric capacity tantalum wire surface film oxide, for carrying out surface film oxide process to the periphery of the multiple tantalum wires 4 be welded on tantalum electric capacity, described tantalum condenser welding is connected on steel bar 3, the tantalum wire 4 that tantalum electric capacity can be divided into smooth piece 5 and be located on smooth piece 5, tantalum wire 4 is the anode tap of tantalum electric capacity, one end of tantalum wire 4 is welded on steel bar 3, the other end is connected with smooth piece 5 that exposes, the processing method of tantalum wire 4 surface film oxide of the present embodiment just can utilize laser to carry out demoulding process to the tantalum wire 4 be between steel bar 3 and smooth piece 5, comprise the steps:
S1: described steel bar 3 is fixed on stepping platform 1;
S2: tantalum wire 4 periphery is divided into first area 41, second area 42, the 3rd region 43 and the 4th region 44;
S3: adopt the method for laser fixed fire scanning successively to carry out demoulding to described first area 41, second area 42;
S4: described steel bar 3 is overturn together with the tantalum wire 4 on it and is fixed on described stepping platform 1;
S5: adopt the method for laser fixed fire scanning successively to carry out demoulding to described 3rd region 43, the 4th region 44.
More specifically:
In step sl, steel bar 3 is placed on stepping platform 1, whether level is neat for all tantalum wires 4 on the good steel bar 3 of precheck, namely the circumferential section height of all tantalum wires 4 is allowed to be in unanimously, if no, first by whole tantalum wire 4 horizontal alignment, avoid indivedual tantalum wire 4 warpage, cause demoulding effect bad.
Meanwhile, the method for described laser fixed fire scanning is carry out demoulding by laser head to the described tantalum wire 4 stepping to fixed fire position 6,7, and described fixed fire position 6,7 is the projected position of described laser head.Fixed fire position 6,7 can be determined in advance, general, and the position of fixed fire is positioned as close to smooth piece of 5 end faces, but laser facula can not be allowed to be irradiated to smooth piece 5, avoids the etching caused during laser-induced thermal etching smooth piece 5.
In step s 2, in the process of laser-induced thermal etching demoulding, that subregion demoulding is carried out to the circumferential surface of tantalum wire 4, as shown in Figure 5, altogether the periphery of tantalum wire 4 is divided into the cambered surface region that four corresponding angles are equal, be first area 41, second area 42, the 3rd region 43 and the 4th region 44 respectively, wherein, the region angle of each periphery is preferably 90 °.
In described step S3, carry out contraposition demoulding in the journey of going of described stepping platform 1 to described first area 41, backhaul carries out contraposition demoulding to described second area 42; Laser software control is utilized to make laser can carry out fixed point fixed fire scanning in fixed fire position 6,7, laser head is greater than the radius of (or at least equaling) described tantalum wire 4 in the distance of the radial scan of described tantalum wire 4, and laser head is the length that described tantalum wire 4 treats demoulding in the length of the axial scan of described tantalum wire 4; Before carrying out laser fixed fire scanning, adjust the focal length of laser-induced thermal etching in advance, guarantee that the energy of laser can meet the effect etching away tantalum wire 4 oxide-film just, then being fixed on by steel bar 3 can on the workbench of stepping, stepping platform 1 drives steel bar 3 stepping from left to right to move, tantalum wire 4 is one by one through the fixed fire position 6 of laser, and laser triggering etches, and completes and scans etching to the first area 41 of tantalum wire 4 periphery; Wait for that stepping platform 1 drives steel bar 3 to move to limit on the right-right-hand limit, to all tantalum wires 4 carry out etching complete after, then automatically run from right to left again, when step motion is to the fixed fire position 7 of laser one by one for tantalum wire 4, laser is fixed fire position 7 triggering etching more now, completes the laser fixed fire scanning etching to the second area 42 of tantalum wire 4 periphery.
In step s 4 which, completing after to first area 41 and second area 42 demoulding, steel bar 3 is overturn fixing, for step S5 prepares.
In step s 5, carry out contraposition demoulding in the journey of going of described stepping platform 1 to described 3rd region 43, backhaul carries out contraposition demoulding to described 4th region 44.Stepping platform 1 continues to drive steel bar 3 stepping from left to right to move, and tantalum wire 4 is one by one through the fixed fire position 6 of laser, and laser triggering etches, and completes and scans etching to the 3rd region 43 of tantalum wire 4 periphery; Wait for that stepping platform 1 drives steel bar 3 to move to limit on the right-right-hand limit, to all tantalum wires 4 carry out etching complete after, then automatically run from right to left again, when step motion is to the fixed fire position 7 of laser one by one for tantalum wire 4, laser is fixed fire position 7 triggering etching more now, completes the laser fixed fire scanning etching to the 4th region 44 of tantalum wire 4 periphery.So by the subregion demoulding in these four regions, 360 ° of omnibearing films can be reached and take off effect, can ensure that whole tantalum wire 4 needs the length of demoulding and all demoulding is clean all thoroughly in circumferential surface.
In the present embodiment, the speed that stepping platform 1 moves is controlled by software, its movement velocity is controlled well (speed can set on software) by software.
In the present embodiment, described laser is the solid-state laser that energy effects on surface oxide does micro Process ablation, and more specifically, the laser instrument of selection is low power ultraviolet solid-state laser, and laser facula is little.
The present embodiment also proposed a kind of tantalum electric capacity tantalum wire 4 surface oxidation membrane treatment appts, as shown in figures 2-6, comprise stepping platform 1, and the laser fixed fire scanning element 2 matched with stepping platform 1, the direction of the laser head adjustable fixed fire scanning of described laser fixed fire scanning element 2 and angle.
More specifically:
Described stepping platform 1 is provided with the magnetic fixture for fixing described steel bar 3, being welded in tantalum wire 4 on described steel bar 3 is fixed on stepping platform 1 by magnetic fixture, steel bar 3 is convenient to overturn commutation, described stepping platform 1 be straight line stepping module (meaning not shown in the figures), the laser head adjustable fixed fire scanning direction of laser fixed fire scanning element 2 and angle, conveniently can control the scanning pattern of laser.
When carrying out demoulding to all regions, laser head is greater than the radius of described tantalum wire 4 in the distance of the radial scan of described tantalum wire 4, laser head is the length that described tantalum wire 4 treats demoulding in the length of the axial scan of described tantalum wire 4, when going to second area 42 to first area 41 and carrying out demoulding, now the angle of laser head can carry out angle adjustment between 0-180 °, concrete is, when stepping platform 1 has etched first area 41, steel bar 3 is driven to move to limit on the right-right-hand limit place at stepping platform 1, complete the conversion of laser head angle, to adapt to the de-filming process of laser head to second area 42, corresponding when going to the 4th region 44 to the 3rd region 43 and carrying out demoulding, also need above-mentioned laser angle conversion.
In the present embodiment, require the clean surrounding environment processed, in concrete embodiment, the dust proof workshop of more than 10,000 grades can be selected, and install a draft hood when demoulding additional in the surrounding of described treating apparatus, demoulding chip can be avoided the impact of environment, with avoid fragmentary chip may Electrostatic Absorption on tantalum wire 4.
The beneficial effect that the present embodiment is compared with the prior art comprises:
The present embodiment is that knifing process is compared compared to adopting machinery in prior art, laser is used to carry out etch processes to the oxide-film on tantalum wire 4 circumferential surface, substantially increase the operability of demoulding, further, in order to reach good membrane removal effect, the present invention adopts subregion method for demoulding, can reach 360 ° of omnibearing demoulding effects, totally and thoroughly.
In preferred version, carry out in the process of demoulding in employing laser subregion, the stepping platform 1 all tantalum wires 4 controlled on steel bar 3 are adopted to be stepped through the fixed fire position of laser demoulding one by one, effectively complete the membrane removal to all tantalum wires 4, go journey can complete the membrane removal in first area 41 and the 3rd region 43, backhaul can complete the membrane removal in second area 42 and the 3rd region 43, has adopted rotatable laser head, make the scanning pattern of laser adjustable, demoulding better effects if.
Those skilled in the art will recognize that, it is possible for making numerous accommodation to above description, so embodiment is only used to describe one or more particular implementation.
Although described and described and be counted as example embodiment of the present invention, it will be apparent to those skilled in the art that and can make various change and replacement to it, and spirit of the present invention can not have been departed from.In addition, many amendments can be made so that particular case is fitted to religious doctrine of the present invention, and central concept of the present invention described here can not be departed from.So the present invention is not limited to specific embodiment disclosed here, but the present invention also may comprise all embodiments and equivalent thereof that belong to the scope of the invention.
Claims (10)
1. a processing method for tantalum electric capacity tantalum wire surface film oxide, for carrying out surface film oxide process to the periphery of the two or more tantalum wire be welded on tantalum electric capacity, described tantalum condenser welding is connected on steel bar, it is characterized in that comprising the steps:
S1: described steel bar is fixed on stepping platform;
S2: tantalum wire periphery is divided into first area, second area, the 3rd region and the 4th region;
S3: adopt the method for laser fixed fire scanning successively to carry out demoulding to described first area, second area;
S4: described steel bar is overturn together with the tantalum wire on it and is fixed on described stepping platform;
S5: adopt the method for laser fixed fire scanning successively to carry out demoulding to described 3rd region, the 4th region.
2. the processing method of tantalum electric capacity tantalum wire surface film oxide as claimed in claim 1, it is characterized in that: in described step S3, carry out contraposition demoulding in the journey of going of described stepping platform to described first area, backhaul carries out contraposition demoulding to described second area; In described step S5, carry out contraposition demoulding in the journey of going of described stepping platform to described 3rd region, backhaul carries out contraposition demoulding to described 4th region.
3. the processing method of tantalum electric capacity tantalum wire surface film oxide as claimed in claim 2, it is characterized in that: the method for described laser fixed fire scanning is carry out demoulding by laser head to the described tantalum wire stepping to fixed fire position, and described fixed fire position is the projected position of described laser head.
4. the processing method of tantalum electric capacity tantalum wire surface film oxide as claimed in claim 3, is characterized in that: described laser head is greater than the radius of described tantalum wire in the distance of the radial scan of described tantalum wire.
5. the processing method of tantalum electric capacity tantalum wire surface film oxide as claimed in claim 3, is characterized in that: described laser head is the length that described tantalum wire treats demoulding in the length of the axial scan of described tantalum wire.
6. the processing method of tantalum electric capacity tantalum wire surface film oxide as claimed in claim 1, is characterized in that: described laser is the solid-state laser that energy effects on surface oxide does micro Process ablation.
7. a tantalum electric capacity tantalum wire surface oxidation membrane treatment appts, is characterized in that: comprise stepping platform, and the laser fixed fire scanning element matched with stepping platform, the direction of the laser head adjustable fixed fire scanning of described laser fixed fire scanning element and angle.
8. the treating apparatus of tantalum electric capacity tantalum wire surface film oxide as claimed in claim 7, is characterized in that: described stepping platform is provided with the magnetic fixture for fixing described steel bar.
9. tantalum electric capacity tantalum wire surface oxidation membrane treatment appts as claimed in claim 7, is characterized in that: described stepping platform be straight line stepping module.
10. tantalum electric capacity tantalum wire surface oxidation membrane treatment appts as claimed in claim 7, is characterized in that: the angle of described laser head can adjust arbitrarily between 0-180 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510947082.5A CN105397299B (en) | 2015-12-16 | 2015-12-16 | A kind of processing method and processing device of tantalum electric capacity tantalum wire surface film oxide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510947082.5A CN105397299B (en) | 2015-12-16 | 2015-12-16 | A kind of processing method and processing device of tantalum electric capacity tantalum wire surface film oxide |
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| CN105397299A true CN105397299A (en) | 2016-03-16 |
| CN105397299B CN105397299B (en) | 2017-07-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113990678A (en) * | 2021-09-29 | 2022-01-28 | 江苏振华新云电子有限公司 | Electrode pin surface polymer remover for tantalum capacitor and removing method thereof |
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| CN101332541A (en) * | 2008-08-06 | 2008-12-31 | 中国航空工业第一集团公司北京航空制造工程研究所 | Short burst laser cleaning method of metal surface |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113990678A (en) * | 2021-09-29 | 2022-01-28 | 江苏振华新云电子有限公司 | Electrode pin surface polymer remover for tantalum capacitor and removing method thereof |
| CN113990678B (en) * | 2021-09-29 | 2023-01-13 | 江苏振华新云电子有限公司 | Electrode pin surface polymer remover for tantalum capacitor and removing method thereof |
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| CN105397299B (en) | 2017-07-21 |
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