CN105388322A - Optical detection method, and optical MEMS (Micro Electro mechanical System) detector and preparation method thereof - Google Patents
Optical detection method, and optical MEMS (Micro Electro mechanical System) detector and preparation method thereof Download PDFInfo
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- CN105388322A CN105388322A CN201510876351.3A CN201510876351A CN105388322A CN 105388322 A CN105388322 A CN 105388322A CN 201510876351 A CN201510876351 A CN 201510876351A CN 105388322 A CN105388322 A CN 105388322A
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- photodiode
- electromechanics
- optical
- dividing wall
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/093—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by photoelectric pick-up
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to an optical detection method, and an optical MEMS detector and a preparation method thereof. The optical MEMS detector comprises a substrate, at least one photodiode, a dividing wall and at least one moving piece, wherein the photodiode is arranged in an area of the substrate; the dividing wall is placed on the substrate and surrounds the area of the photodiode; and the moving piece over the photodiode includes a hole through which light can penetrate and reach the photodiode, and when the moving piece moves, the quantity of light that reaches the photodiode via the hole is changed.
Description
The application to be that on Dec 1st, 2009 submits to, application number be 200910246798.7, denomination of invention be the divisional application of the application of " optical profile type method for detecting, optical microswitch dynamo-electric detect take into account its method for making ".
Technical field
The present invention relates to a kind of optical profile type method for detecting and optical microswitch electromechanics (MEMS, Micro-Electro-MechanicalSystem) detecting meter, refer to that a kind of optical detecting that utilizes is to replace the microcomputer electric component of condenser type detecting especially, it such as can be used for making accelerometer.The present invention also has the method for making about this optical microswitch electromechanics detecting meter.
Background technology
The method of current Micro-electro-mechanaccelerometer accelerometer detection displacement is generally condenser type.As shown in Figure 1, capacitive accelerometer comprises fixed electorde 1 and movable electrode 2, and when movable electrode 2 moves, capacitance between the two changes, and just can detect acceleration according to this.Structure shown in Fig. 1 can be top view (measuring the capacitance variations in horizontal direction) or sectional view (measuring the capacitance variations in vertical direction).
No. 6763718th, United States Patent (USP) discloses another kind of prior art as Fig. 2, it is optical type accelerometer, utilize Fabry-Perot resonance manner, make light at two minute surfaces 3, reflection in 4 and only have the light of specific wavelength to be penetrated in photodiode (photodiode) 5 to produce photoelectric effect.The structure of this optical type accelerometer is very complicated, in order to reach Fabry-Perot resonance, must make two minute surfaces 3, distance between 4 is accurate, need provide Regulation mechanism for this reason, and must make the minute surface 3 of semi-penetration semi-reflective on the surface of film 6 and substrate 7,4, its complex process and cost is higher.
Therefore, the invention provides a kind of optical microswitch electromechanics detecting meter with the problem improveing prior art.
Summary of the invention
The first object of the present invention is to propose a kind of optical microswitch electromechanics detecting meter.
The second object of the present invention is the method for making proposing a kind of optical microswitch electromechanics detecting meter.
The third object of the present invention is at a kind of optical profile type method for detecting of proposition.
For reaching above object, saying with regard to one of them viewpoint, the invention provides a kind of optical microswitch electromechanics detecting meter, comprising: a substrate; At least one photodiode in this substrate one region; The dividing wall that position is square on the substrate, surrounds this photodiode area; And at least one moving part above this photodiode, this at least one moving part has perforate tolerable light traverses and arrives photodiode, wherein when this at least one moving part moves, changes and passes through the light quantity that this perforate arrives photodiode.
Above-mentioned optical microswitch electromechanics detecting meter can more comprise light emitting source and optical element, enters in the perforate of this at least one moving part with directing light.
For reaching above-mentioned purpose, saying with regard to another viewpoint, the invention provides the method for making of a kind of optical microswitch electromechanics detecting meter, comprising following steps: provide a substrate; At least one photodiode is formed in this substrate one region; Square one-tenth dividing wall, surrounds this photodiode area on the substrate; And at least one moving part is formed above this photodiode, this at least one moving part has perforate tolerable light traverses and arrives photodiode, wherein when this at least one moving part moves, changes and passes through the light quantity that this perforate arrives photodiode.
In above-mentioned method for making, substrate can arrange photic zone, and in photic zone, can optical channel be set.Photic zone timing mode can be used to be etched or in photic zone arrange below the first photic zone, etch stop layer, above the second photic zone, first etch the first photic zone and stop at etch stop layer, etch this etch stop layer again, these two kinds of modes all can in order to control euphotic thickness.The material of etch stop layer can comprise without crystal silicon (amorphoussilicon) or silicon nitride.
For reaching above-mentioned purpose, say with regard to another viewpoint, the invention provides a kind of optical profile type method for detecting, comprise following steps: provide one to detect meter, it comprises at least one photodiode and position at least one moving part above this photodiode, this at least one moving part has perforate, and tolerable light traverses arrives this photodiode; When this at least one moving part moves, change and pass through the light quantity that this perforate arrives photodiode; And according to the change of photodiode received light amount, judge whether this detecting meter moves and amount of movement.
In above-mentioned optical profile type method for detecting, level or the vertical movement of moving part can cause photodiode to receive the change of light quantity.
Illustrate in detail below by specific embodiment, when the effect being easier to understand object of the present invention, technology contents, feature and reach.
Accompanying drawing explanation
Fig. 1 illustrates the condenser type detecting of prior art;
Fig. 2 illustrates the optical profile type detecting in No. 6763718th, prior art United States Patent (USP);
Fig. 3 illustrates structure of the present invention;
Fig. 4 ~ 5 illustrate detecting mode of the present invention;
Fig. 6 ~ 7 show the first embodiment of the present invention;
Fig. 8 ~ 10 show the second embodiment of the present invention;
Figure 11 shows the third embodiment of the present invention;
Figure 12 ~ 13 demonstrate the fourth embodiment of the present invention.
Symbol description in figure
1,2 electrodes
3,4 minute surfaces
5 photodiodes
6 films
7 substrates
11 substrates
12 photodiodes
13 isolated areas
21 dividing walls
21a compound crystal silicon layer
21b metal level
21c channel layer
22 moving parts
23 perforates
31 first photic zones
32 etch stop layers
33 second photic zones
33 optical channels
41 light emitting sources
50 optical elements
51 minute surfaces
52 lens
60 photoresistances
Embodiment
Icon in the present invention all belongs to signal, is mainly intended to represent the order relation up and down between processing step and each layer, as shape, thickness and width then not according to scale.
Refer to Fig. 3-5, optical microswitch of the present invention electromechanics detecting meter and method for detecting are described.Optical microswitch electromechanics detecting meter of the present invention arranges photodiode 12 on the substrate 11, and moving part 22 is set above it, this moving part 22 can be any shape and structure, and can be odd number, plural connected or plural disjunct structure, only need it between moving part itself or plural moving part, have perforate 23, can allow that light traverses arrives photodiode 12, and the some light when moving part 12 moves above energy shield light electric diode 12, make to pass through the light quantity change that perforate 23 arrives photodiode 12.
When detecting meter and being mobile, the level of moving part 22 or the vertical mobile photosensitive change causing photodiode 12.Refer to Fig. 4, when moving part 22 moves horizontally, will the area of its shield light electric diode 12 be increased, reduce the sensitive volume of photodiode 12; Refer to Fig. 5 again, when moving part 22 vertically mobile and near photodiode 12 time, the sensitive volume of photodiode 12 will be reduced, when moving part 22 vertically mobile and away from photodiode 12 time, will the sensitive volume of photodiode 12 be increased.According to the light quantity that photodiode 12 receives, can judge whether detecting meter moves and amount of movement.
It is the structure of single pixel (pixel) shown in Fig. 3-5, in optical microswitch electromechanics detecting meter of the present invention, multiple pixel forming array (array) can be set, wherein each pixel is isolated from each other with isolated area 13 electrically, and separated with dividing wall 21, to stop unnecessary light.In another arrangement, also dividing wall 21 can not be set for each pixel, but to combine several pixel be a unit, separate each other with dividing wall 21 between constituent parts.The size of each pixel can be identical or different, arrangement such as can become a photosensitive unit compared with the pixel of small size around the pixel of larger area, or the pixel of larger area is placed in whole array centre, and the pixel compared with small size is placed in array periphery, etc.14, space between moving part 22 with photodiode 12 can coordinate photosensitively protects demand with substrate, arranges suitable material or optical channel (being detailed later).In addition, on photodiode 12 side, electrical components can be set as (not shown) such as transistors.The optical microswitch electromechanics detecting meter of the invention described above such as can apply to as accelerometer with optical profile type method for detecting, for detecting acceleration, according to the photosensitive change in whole pixel array, judge that the three-dimensional detecting meter moves.
The method for making of optical microswitch of the present invention electromechanics detecting meter is below described.
First first embodiment of method for making be described, refer to Fig. 6-7.As shown in the figure, first providing a substrate 11, such as, is silicon substrate; Such as isolated area 13 is formed with shallow trench isolation from the mode of (shallowtrenchisolation, STI) in this substrate 11; In isolated area 13 such as form photodiode 12 in implanted ions mode in the region that separates out.Then, side deposits and defines the pattern of multilayer light-proof material rattan layer on the substrate, and form dividing wall 21, wherein the mode of define pattern can be micro-shadow and etching.In a preferred embodiment of the present invention, for compatible with CMOS technology, material layer 21a can use the grid material forming CMOS transistor, such as, be compound crystal silicon (polysilicon); Material layer 21b can use the material forming intraconnections metal level, such as, be aluminium or copper; Material layer 21c can use the material forming intraconnections channel layer, such as, be tungsten or copper.While formation dividing wall 21, also form moving part 22 and photic zone 31, the material of photic zone 31 is such as oxide.
For reaching preferably optical effect, photic zone 31 thickness above photodiode 12 should be controlled.The present embodiment, as Fig. 7, etches photic zone 31 with timing mode (timemode), makes the top of this substrate 11 retain the photic zone 31 of suitable thickness.When the material of photic zone 31 is oxide, etching mode such as can be hydrogen fluoride vapor etching.Through above technique, namely complete the optical microswitch electromechanics detecting meter of the present embodiment.
An alternative embodiment of the invention refers to Fig. 8-10; The present embodiment part similar to previous embodiment is not elsewhere specified.As shown in Figure 8, prior to substrate 11 disposed thereon first photic zone 31, its material is such as oxide; Again in the first photic zone 31 disposed thereon etch stop layer 32; Then at this etch stop layer 32 disposed thereon second photic zone 33, its material is such as oxide.This material selected by etch stop layer 32 need have higher etching selectivity (etchselectivity) to the second photic zone, and the material selected by it is such as without crystal silicon (amorphoussilicon) or silicon nitride.Next see Fig. 9, etch this second photic zone 33, the mode of its etching is such as hydrogen fluoride vapor etching, and rests on above etch stop layer 32.Again see Figure 10, this etch stop layer 32 of etching removing, exposes the first photic zone 31 of below, namely completes the optical microswitch electromechanics detecting meter of the present embodiment.
In one of them embodiment of the present invention, can in overall optical microswitch electromechanics detecting meter or at its outer setting light emitting source 41, this light emitting source such as can be light emitting diode, receive stable light to make the detecting of optical microswitch electromechanics.In addition, can arrange in pairs or groups guide-lighting optical element 50 is set in optical microswitch electromechanics detecting meter, such as, can comprise minute surface 51 and lens 52, with by ray guidance in perforate 23.
In some applications; may wish that the first photic zone 31 directly over by photodiode 12 removes; produce optical channel (lightpassage) to increase the penetrance of light; the first photic zone 31 above photodiode 12 side should be retained in the case; to protect the electrical components in this pixel (as transistor, not shown).Its technique, for the structure of the first embodiment, as illustrated by figs. 12-13, after first depositing photoresistance 60, can etch the first photic zone 31 with micro-shadow, etching mode, more comprehensive etching, can form optical channel 34.Although please note that the optical channel 34 of icon runs through the first photic zone 31 completely, the present invention is not limited thereto, the bottom of optical channel 34 can not be through to photodiode 12.As for forming optical channel in second embodiment, then can deposit photoresistance after Figure 10, etch the first photic zone 31 with micro-shadow, etching mode, can optical channel be formed equally, separately not illustrate.
Compare with prior art, in the capacitive micro-electromechanical detecting meter of Fig. 1, because two electrodes 1,2 are adjacent to each other, the problem of (stiction) can be pasted in technique with actual use.In the present invention, because distant between moving part 22 and photodiode 12, in technique with actual use, then there is no this problem.In addition, structure of the present invention can detect the movement on three-dimensional, and the capacitance type structure of Fig. 1 only can detect the movement on two-dimensional directional.Detect meter with the optical microswitch of Fig. 2 electromechanics to compare, the present invention need not consider Fabry-Perot resonance, does not need accurately to control two minute surfaces 3, the distance between 4, therefore technique far beyond be simple and easy.
Below for preferred embodiment, the present invention is described, just the above, be only and make those skilled in the art be easy to understand content of the present invention, be not used for limiting interest field of the present invention.For those skilled in the art, when in spirit of the present invention, can thinking immediately and various equivalence change.For example, material, the number of plies etc. in the above each embodiment are all citing, and also have the possibility of other various equivalence change, such as the structure of moving part 22 is not limited to shown in each embodiment.Again such as, junction transistor (JunctionTransistor) can be used in pixel region to make electrical components, like this then when there is no polysilicon gate, the first photic zone 31 all can be removed, and also not needing material layer 21a in dividing wall 21.Because above many variations, all change with spirit institute is impartial for it or modifies according to concept of the present invention when known, all should be included in claim of the present invention.
Claims (8)
1. an optical microswitch electromechanics detecting meter, is characterized in that, comprise:
A substrate;
At least one photodiode in this substrate one region;
The dividing wall that position is square on the substrate, surrounds this photodiode area;
At least one moving part above this photodiode; And
Perforate above this photodiode, this perforate allows that light traverses arrives photodiode, wherein when this at least one moving part moves, change and pass through the light quantity that this perforate arrives photodiode, and the material of at least one moving part is identical with the material of this dividing wall.
2. optical microswitch electromechanics detecting meter as claimed in claim 1, wherein, also comprises the photic zone that is covered in this surface.
3. optical microswitch electromechanics detecting meter as claimed in claim 1, wherein, this dividing wall is formed by multilayer light-proof material deposits.
4. optical microswitch electromechanics detecting meter as claimed in claim 3, wherein, the material layer of this dividing wall is use the grid material forming CMOS transistor.
5. optical microswitch electromechanics detecting meter as claimed in claim 3, wherein, the material layer of this dividing wall is use the material forming intraconnections metal level.
6. optical microswitch electromechanics detecting meter as claimed in claim 1, wherein, the material layer of this dividing wall is use the material forming intraconnections channel layer.
7. optical microswitch electromechanics detecting meter as claimed in claim 6, wherein, at least one moving part belongs to identical rete together with this dividing wall of part.
8. a method for making for optical microswitch electromechanics detecting meter, is characterized in that, comprise following steps:
A substrate is provided;
At least one photodiode is formed in this substrate one region;
Square one-tenth dividing wall, surrounds this photodiode area on the substrate; And
Above this photodiode, form at least one moving part and perforate, wherein while formation dividing wall, also form this moving part.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102467987A CN102079501A (en) | 2009-12-01 | 2009-12-01 | Optical detecting method, optical micro-electromechanical detector and manufacturing method thereof |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102467987A Division CN102079501A (en) | 2009-12-01 | 2009-12-01 | Optical detecting method, optical micro-electromechanical detector and manufacturing method thereof |
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| CN105388322A true CN105388322A (en) | 2016-03-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510876351.3A Pending CN105388322A (en) | 2009-12-01 | 2009-12-01 | Optical detection method, and optical MEMS (Micro Electro mechanical System) detector and preparation method thereof |
| CN2009102467987A Pending CN102079501A (en) | 2009-12-01 | 2009-12-01 | Optical detecting method, optical micro-electromechanical detector and manufacturing method thereof |
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| CN2009102467987A Pending CN102079501A (en) | 2009-12-01 | 2009-12-01 | Optical detecting method, optical micro-electromechanical detector and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040046111A1 (en) * | 2002-09-10 | 2004-03-11 | The Regents Of The University Of California | Fiber optic micro accelerometer |
| US20060192974A1 (en) * | 2005-02-01 | 2006-08-31 | Chian Chiu Li | Interferometric MOEMS Sensor |
| CN1841071A (en) * | 2005-03-31 | 2006-10-04 | Pgs美洲公司 | Optical accelerometer, optical inclinometer and seismic sensor system |
| CN1987486A (en) * | 2006-12-26 | 2007-06-27 | 清华大学 | Integrated optic grating interference micro mechanical acceleration sensor and its producing method |
| CN101482575A (en) * | 2009-02-23 | 2009-07-15 | 东南大学 | Resonance type integrated light guide accelerometer with cantilever beam structure |
-
2009
- 2009-12-01 CN CN201510876351.3A patent/CN105388322A/en active Pending
- 2009-12-01 CN CN2009102467987A patent/CN102079501A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040046111A1 (en) * | 2002-09-10 | 2004-03-11 | The Regents Of The University Of California | Fiber optic micro accelerometer |
| US20060192974A1 (en) * | 2005-02-01 | 2006-08-31 | Chian Chiu Li | Interferometric MOEMS Sensor |
| CN1841071A (en) * | 2005-03-31 | 2006-10-04 | Pgs美洲公司 | Optical accelerometer, optical inclinometer and seismic sensor system |
| CN1987486A (en) * | 2006-12-26 | 2007-06-27 | 清华大学 | Integrated optic grating interference micro mechanical acceleration sensor and its producing method |
| CN101482575A (en) * | 2009-02-23 | 2009-07-15 | 东南大学 | Resonance type integrated light guide accelerometer with cantilever beam structure |
Non-Patent Citations (2)
| Title |
|---|
| EBRAHIM ABBASPOUR-SANI ET AL.: "A wide-range linear optical accelerometer", 《SENSORS AND ACTUATORS A》 * |
| 郑露滴 等: "采用微机械加工技术的微光学加速度计", 《仪器仪表学报》 * |
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| CN102079501A (en) | 2011-06-01 |
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Application publication date: 20160309 |