CN105369206A - Magnetron sputtering device for preparing flexible liner membrane - Google Patents
Magnetron sputtering device for preparing flexible liner membrane Download PDFInfo
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- CN105369206A CN105369206A CN201510876661.5A CN201510876661A CN105369206A CN 105369206 A CN105369206 A CN 105369206A CN 201510876661 A CN201510876661 A CN 201510876661A CN 105369206 A CN105369206 A CN 105369206A
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Abstract
The invention discloses a magnetron sputtering device for preparing a flexible liner membrane. The magnetron sputtering device comprises substrates and target materials, wherein the target materials comprise an upper target material and a lower target material, and the two target materials are oppositely arranged up and down; magnets for a magnetic field between the two target materials are arranged at the upper part of the upper target material and the lower part of the lower target material, and the direction of the magnetic field is perpendicular to the target materials; the substrates are perpendicularly arranged on the outer sides of the two target materials. In the sputtering process, after a secondary electron flies out of target surfaces, the secondary electron is accelerated by the electric field of the cathode of the target materials, the electron is bound by the magnetic field to move to the anode and is effectively closed between the two target poles to do Lorentz movement, and a cylindrical plasma is formed; after electronic energy is exhausted, the electron is finally deposited on the substrates. As the electronic energy is low, the temperature rise of the substrates is low, and the membrane effectively avoids ion damage. Meanwhile, the membrane is formed by target material ion scattering and thermal decomposed deposition, so that the membrane is deposited at the room temperature, the damage of burning and deformation of a flexible liner in the traditional magnetron sputtering process is avoided, and the quality of the membrane is ensured.
Description
Technical field
The present invention relates to technical field of vacuum plating, specifically a kind of magnetic control sputtering device preparing flexible substrate film.
Background technology
Known, the primary process adopting magnetron sputtering to carry out vacuum plating is that electronics accelerates to fly in the process of substrate to collide with ar atmo under the effect of electric field, and ionize out a large amount of electronics and argon ion, electronics flies to substrate.Argon ion accelerates to bombard target under the effect of electric field, sputters target atom or molecule, in neutral target atom or molecule deposition film forming on substrate.Magnetron sputtering is that continuous and ar atmo collides, and ionizes the argon ion of more bombardment targets with magnetic field constraint and the movement path extending electronics, and the specific ionization improving argon gas also effectively utilizes the energy of electronics.
But in traditional magnetic control sputtering device, base substrate and target are oppositely arranged, when sputtering, high energy particle on target can produce ion dam age to deposit film, and high-energy particle bombardment can cause substrate heating, especially during deposit film, flexible substrate can be caused to be out of shape, to affect film quality on flexible materials.
Summary of the invention
The object of the present invention is to provide a kind of magnetic control sputtering device preparing flexible substrate film, this device can be avoided causing ion dam age when sputtering to deposit film, and guarantees that flexible substrate can not damage, and ensures film quality.
The technical solution adopted for the present invention to solve the technical problems is:
Prepare a magnetic control sputtering device for flexible substrate film, comprise substrate and target, described target comprises target and lower target, and two targets are oppositely arranged up and down; The top of upper target and the bottom of lower target are provided with the magnet forming magnetic field between two targets, and field direction is vertical with target; Described substrate is vertically installed in the outside of two targets.
Further, the spacing of two targets is 70mm.
Further, the distance between described substrate and two target center lines is 65mm.
The invention has the beneficial effects as follows, two targets opposing upper and lower are set, and substrate are vertically installed in the outside of two targets, in sputter procedure, secondary electron flies out after target surface, by the electric field acceleration of target cathode, electronics moves by magnetic field constraint anode, and is moved by the intercropping Lorentz lorentz being effectively enclosed in two target poles, form columnar plasma, along with the increase of collision frequency, the energy expenditure of electronics totally, is finally deposited on substrate; Because the energy of this electronics is very low, the energy passing to substrate is very little, substrate temperature rise is lower and make film effectively prevent ion dam age, simultaneously, film is obtained by target ion scattering and thermal decomposed deposition, and therefore film deposits at room temperature, avoids flexible substrate burnt in conventional magnetron sputter procedure, the damages such as distortion, ensure film quality.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described:
Fig. 1 is structural representation of the present invention.
Embodiment
As shown in Figure 1, the invention provides a kind of magnetic control sputtering device preparing flexible substrate film, comprise substrate 5 and target, described target comprises target 1a and lower target 1b, and two targets are oppositely arranged up and down, and is connected by copper conductor 3; The top of upper target 1a is provided with the first magnet N, and the bottom of lower target 1b is provided with the second magnet S, and the first magnet N and the second magnet S forms magnetic field between two targets, and field direction is vertical with target; Described substrate 5 is vertically installed in the outside of two targets, and anode 6 is located at the outside of substrate 5; As preferably, the spacing d1 of two targets is 70mm, and the distance d2 between described substrate and two target center lines is 65mm.When specifically preparing, substrate frame can be used to load substrate, and substrate can adopt PET or PI, PET or PI is removed the mulch film of coated surface, is loaded in substrate frame, and described target can adopt the ceramic targets such as ITO, AZO or GZO.
In sputter procedure, two targets relatively sputter and are equivalent to existence two plasma generation sources, added magnetic field is vertical with target, effective constraint electron movement path, secondary electron flies out after target surface, by the electric field acceleration of target cathode, move by magnetic field constraint anode 6 during electron synchrotron, moved by the intercropping Lorentz lorentz being effectively enclosed in two targets, back and forth between two targets, continuous and Ar atom collides, ionize more Ar ion bombardment target, columnar plasma 4 is formed between target, add plasma density, the target atom sputtered or molecule along with collision frequency increase energy expenditure totally, pass through radiation, thermal destruction is finally deposited on substrate.
Because the energy of this target atom or molecule is very low, the energy passing to substrate is very little, causes substrate temperature rise lower, makes film effectively prevent ion dam age, ensures film quality.Under the condition of Same Efficieney compared with conventional magnetron sputter equipment, film forming particle bombarding energy is reduced, reduce film deposition rate, be conducive to film forming atom and spread at substrate surface, growing up of crystal grain, make the finer and close of film growth.In addition, the projectile energy of atom is low, is more conducive to the homogeneity of film forming, and film grain growth is of value to formation ITO, AZO or GZO crystalline structure.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention; Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent replacement, equivalence change and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (3)
1. prepare a magnetic control sputtering device for flexible substrate film, comprise substrate and target, it is characterized in that, described target comprises target and lower target, and two targets are oppositely arranged up and down; The top of upper target and the bottom of lower target are provided with the magnet forming magnetic field between two targets, and field direction is vertical with target; Described substrate is vertically installed in the outside of two targets.
2. a kind of magnetic control sputtering device preparing flexible substrate film according to claim 1, is characterized in that, the spacing of two targets is 70mm.
3. a kind of magnetic control sputtering device preparing flexible substrate film according to claim 1 and 2, is characterized in that, described substrate is 65mm to the distance between center line of two targets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510876661.5A CN105369206A (en) | 2015-12-03 | 2015-12-03 | Magnetron sputtering device for preparing flexible liner membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510876661.5A CN105369206A (en) | 2015-12-03 | 2015-12-03 | Magnetron sputtering device for preparing flexible liner membrane |
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| CN105369206A true CN105369206A (en) | 2016-03-02 |
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| CN201510876661.5A Pending CN105369206A (en) | 2015-12-03 | 2015-12-03 | Magnetron sputtering device for preparing flexible liner membrane |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921763A (en) * | 2022-05-19 | 2022-08-19 | 江苏利成精密科技有限公司 | Method for forming film by adopting magnetron sputtering |
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| US20110127157A1 (en) * | 2007-08-15 | 2011-06-02 | Gencoa Ltd. | Low impedance plasma |
| CN103042766A (en) * | 2012-12-18 | 2013-04-17 | 斯迪克新型材料（江苏）有限公司 | High-transmittance high-heat insulation energy-saving explosion-proof membrane and preparation process thereof |
| CN103057211A (en) * | 2012-12-18 | 2013-04-24 | 苏州斯迪克新材料科技股份有限公司 | Preparation technology of energy-saving explosion-proof film with high transmittance and obtained explosion-proof film |
| CN103290380A (en) * | 2013-06-26 | 2013-09-11 | 南昌欧菲光科技有限公司 | On-line ITO thin film characteristic feedback device |
| CN103766002A (en) * | 2011-06-09 | 2014-04-30 | 韩国基础科学支援硏究所 | Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same |
| CN205133730U (en) * | 2015-12-03 | 2016-04-06 | 凯盛光伏材料有限公司 | Preparation flexible substrate film's magnetron sputtering device |
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2015
- 2015-12-03 CN CN201510876661.5A patent/CN105369206A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110127157A1 (en) * | 2007-08-15 | 2011-06-02 | Gencoa Ltd. | Low impedance plasma |
| CN103766002A (en) * | 2011-06-09 | 2014-04-30 | 韩国基础科学支援硏究所 | Plasma-generating source comprising a belt-type magnet, and thin-film deposition system using same |
| CN103042766A (en) * | 2012-12-18 | 2013-04-17 | 斯迪克新型材料（江苏）有限公司 | High-transmittance high-heat insulation energy-saving explosion-proof membrane and preparation process thereof |
| CN103057211A (en) * | 2012-12-18 | 2013-04-24 | 苏州斯迪克新材料科技股份有限公司 | Preparation technology of energy-saving explosion-proof film with high transmittance and obtained explosion-proof film |
| CN103290380A (en) * | 2013-06-26 | 2013-09-11 | 南昌欧菲光科技有限公司 | On-line ITO thin film characteristic feedback device |
| CN205133730U (en) * | 2015-12-03 | 2016-04-06 | 凯盛光伏材料有限公司 | Preparation flexible substrate film's magnetron sputtering device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921763A (en) * | 2022-05-19 | 2022-08-19 | 江苏利成精密科技有限公司 | Method for forming film by adopting magnetron sputtering |
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