CN105367068A - High-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder and preparation method thereof - Google Patents
High-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder and preparation method thereof Download PDFInfo
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- CN105367068A CN105367068A CN201510706703.0A CN201510706703A CN105367068A CN 105367068 A CN105367068 A CN 105367068A CN 201510706703 A CN201510706703 A CN 201510706703A CN 105367068 A CN105367068 A CN 105367068A
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Abstract
The invention discloses a high-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder. According to the material, aluminum nitride and silicon carbide powder are mixed for use, and the material has high heat conductivity and environmental friendliness. A composite solvent prepared from quaternary ammonium salt ionic liquid and absolute ethyl alcohol and the like is lower in surface tension than a conventional organic solvent, the reaction activity is higher, and the performance of wetting micro-scale materials is better. Materials are mutually evenly dispersed and glued, and obtained mixtalol-based tape casting slurry is good in liquidity and easy to form. Green bodies are better in thermal stability in the follow-up degumming and sintering process, added micro-crystal ceramic powder is good in heat conductivity and low in coefficient of expansion and toughed; and by combination with a sintering aid and other raw materials, the prepared ceramic substrate is high in density, bending resistance and rate of finished products, economical and efficient and can be widely used as various circuit board substrates.
Description
Technical field
The present invention relates to circuit card ceramic substrate material technical field, particularly relate to fine and close high heat conduction AlN-SiC composite circuit board baseplate material of a kind of height containing micro-crystalline ceramic powder and preparation method thereof.
Background technology
Along with the increase of electronic devices and components power and density, cause unit volume thermal value also to increase thereupon, require more and more higher to the over-all properties of circuit substrate, wherein ceramic substrate possesses good over-all properties, in insulativity, thermal conductivity and thermal expansivity, have outstanding performance in the aspects such as chemical stability, be widely used in gradually in baseplate material, wherein continue to use more of a specified duration mainly with aluminum oxide, beryllium oxide is as raw substrate, but this bi-material to there is thermal conductivity low, the defect such as poisonous, application is restricted, otherwise with aluminium nitride, silicon carbide then has comparatively significantly advantage as baseplate material in use properties.
Although having a extensive future of aluminium nitride, silicon carbide ceramics substrate, but exist in actual production process cost of material costly, high temperature sintering density is low, production process is loaded down with trivial details, raw material availability is low, actual thermal conductivity problem not fully up to expectations etc., govern the extensive use of this kind of material, be badly in need of doing further improvement from preparation of raw material and production technique.
Summary of the invention
The object of the invention is exactly the defect in order to make up prior art, provides fine and close high heat conduction AlN-SiC composite circuit board baseplate material of a kind of height containing micro-crystalline ceramic powder and preparation method thereof.
The present invention is achieved by the following technical solutions:
The fine and close high heat conduction AlN-SiC composite circuit board baseplate material of height containing micro-crystalline ceramic powder, this material is made up of the raw material of following weight part: aluminium nitride 60-70, nanometer zirconium phosphate 3-5, silicon carbide 15-20, ion liquid of quaternaries 10-15, micro-crystalline ceramic powder 8-10, dehydrated alcohol are appropriate, silane coupling agent kh5501-2, hexylene glycol 4-5, polyoxyethylene glycol 1-1.5, sintering aid 6-8.
Described sintering aid is made up of the raw material of following weight part: high purity boron powder 2-3, cryolite powder 4-5, nano aluminum nitride 10-15, solid content are alumina sol 10-15, the acetic acid 0.01-0.02 of 25-30%, the preparation method of sintering aid is: all dropped in ball grinder by all raw materials, airtight rolling ball milling 10-12h, after ball milling terminates, mixed slurry is taken out, put into vacuum drying oven dry, drying temperature is 80-100 DEG C, be cooled to room temperature after complete drying, gained powder Ball milling becomes powder and get final product.
The preparation method of described baseplate material is:
(1) first by Ball milling 20-25h after aluminium nitride, silicon carbide, micro-crystalline ceramic powder, nanometer zirconium phosphate, quaternary ammonium salt ionic liquid, silane coupling agent kh550, sintering aid mixing, add other remaining component subsequently, continue Ball milling 10-15h, the viscosity controller of gained slurry is at 15000-20000cps, finally that gained slurry is for subsequent use after froth in vacuum process;
(2) by the slurry of above-mentioned preparation through tape casting machine, curtain coating obtains the base substrate of desired thickness, base substrate is sent in vacuum resistance furnace after thermal treatment 2-3h by gained base substrate under 500-600 DEG C of condition, and with the temperature of 1700-1780 DEG C sintering 3-4h under nitrogen and hydrogen gas mixture atmosphere, obtain described composite substrate material, wherein the throughput ratio of nitrogen and hydrogen is 1:0.5-1.
The present invention by aluminium nitride and silicon carbide powder used in combination, comprehensively both advantage, possess high heat conduction and the feature of environmental protection, and with quaternary ammonium salt ionic liquid, the double solvents of the preparation such as dehydrated alcohol is lower than traditional surface of organic solvent tension force, reactive behavior is higher, better to the wetting property of microscale material, the mutual dispersed bonding of each storeroom, the composite alcohol-base casting slurry good fluidity obtained, be easy to shaping, base substrate follow-up come unstuck and sintering process in thermostability better, the micro-crystalline ceramic powder heat conductance added is good, the coefficient of expansion is low, toughen and intensify, again in conjunction with sintering aid and other raw material, make the ceramic substrate density of preparation high, high-strength bending resistance, yield rate is high, economical and efficient, multiple circuit board substrate can be used as widely.
Embodiment
This embodiment material is made up of the raw material of following weight part: aluminium nitride 60, nanometer zirconium phosphate 3, silicon carbide 15, ion liquid of quaternaries 12, micro-crystalline ceramic powder 8, dehydrated alcohol are appropriate, silane coupling agent kh5501, hexylene glycol 4, polyoxyethylene glycol 1, sintering aid 6.
Wherein sintering aid is made up of the raw material of following weight part: high purity boron powder 2, cryolite powder 4, nano aluminum nitride 10, solid content are alumina sol 10, the acetic acid 0.01 of 25%, the preparation method of sintering aid is: all dropped in ball grinder by all raw materials, airtight rolling ball milling 10h, after ball milling terminates, mixed slurry is taken out, put into vacuum drying oven dry, drying temperature is 80 DEG C, is cooled to room temperature after complete drying, and gained powder Ball milling becomes powder and get final product.
The preparation method of this embodiment material is:
(1) first by Ball milling 20h after aluminium nitride, silicon carbide, micro-crystalline ceramic powder, nanometer zirconium phosphate, quaternary ammonium salt ionic liquid, silane coupling agent kh550, sintering aid mixing, add other remaining component subsequently, continue Ball milling 10h, the viscosity controller of gained slurry is at 15000cps, finally that gained slurry is for subsequent use after froth in vacuum process;
(2) by the slurry of above-mentioned preparation through tape casting machine, curtain coating obtains the base substrate that thickness is 3mm, base substrate is sent in vacuum resistance furnace after thermal treatment 2h by gained base substrate under 500 DEG C of conditions, and with the temperature of 1700 DEG C sintering 3h under nitrogen and hydrogen gas mixture atmosphere, obtain described composite substrate material, wherein the throughput ratio of nitrogen and hydrogen is 1:0.5.
The performance test structure of the substrate that this embodiment obtains is:
Volume density: 3.62g/cm
3; Flexural strength: 568.5MPa; Thermal conductivity: 174.8(W/m.k).
Claims (3)
1. the fine and close high heat conduction AlN-SiC composite circuit board baseplate material of the height containing micro-crystalline ceramic powder, it is characterized in that, this material is made up of the raw material of following weight part: aluminium nitride 60-70, nanometer zirconium phosphate 3-5, silicon carbide 15-20, ion liquid of quaternaries 10-15, micro-crystalline ceramic powder 8-10, dehydrated alcohol are appropriate, silane coupling agent kh5501-2, hexylene glycol 4-5, polyoxyethylene glycol 1-1.5, sintering aid 6-8.
2. the fine and close high heat conduction AlN-SiC composite circuit board baseplate material of a kind of height containing micro-crystalline ceramic powder as claimed in claim 1, it is characterized in that, described sintering aid is made up of the raw material of following weight part: high purity boron powder 2-3, cryolite powder 4-5, nano aluminum nitride 10-15, solid content is the alumina sol 10-15 of 25-30%, acetic acid 0.01-0.02, the preparation method of sintering aid is: all dropped in ball grinder by all raw materials, airtight rolling ball milling 10-12h, after ball milling terminates, mixed slurry is taken out, put into vacuum drying oven dry, drying temperature is 80-100 DEG C, room temperature is cooled to after complete drying, gained powder Ball milling becomes powder and get final product.
3. fine and close high heat conduction AlN-SiC composite circuit board baseplate material of a kind of height containing micro-crystalline ceramic powder and preparation method thereof as claimed in claim 1, it is characterized in that, described preparation method is:
(1) first by Ball milling 20-25h after aluminium nitride, silicon carbide, micro-crystalline ceramic powder, nanometer zirconium phosphate, quaternary ammonium salt ionic liquid, silane coupling agent kh550, sintering aid mixing, add other remaining component subsequently, continue Ball milling 10-15h, the viscosity controller of gained slurry is at 15000-20000cps, finally that gained slurry is for subsequent use after froth in vacuum process;
(2) by the slurry of above-mentioned preparation through tape casting machine, curtain coating obtains the base substrate of desired thickness, base substrate is sent in vacuum resistance furnace after thermal treatment 2-3h by gained base substrate under 500-600 DEG C of condition, and with the temperature of 1700-1780 DEG C sintering 3-4h under nitrogen and hydrogen gas mixture atmosphere, obtain described composite substrate material, wherein the throughput ratio of nitrogen and hydrogen is 1:0.5-1.
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| CN201510706703.0A CN105367068A (en) | 2015-10-27 | 2015-10-27 | High-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder and preparation method thereof |
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| CN201510706703.0A CN105367068A (en) | 2015-10-27 | 2015-10-27 | High-density high-heat-conduction aluminum nitride-silicon carbide-based composite circuit board substrate material containing micro-crystal ceramic powder and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2714151C1 (en) * | 2019-06-18 | 2020-02-12 | Акционерное общество "Научно-исследовательский институт природных, синтетических алмазов и инструмента" - АО "ВНИИАЛМАЗ" | Method of applying graphene coating on metal powders |
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| JPH01317171A (en) * | 1988-06-16 | 1989-12-21 | Toyo Alum Kk | Production of granular aluminum nitride powder |
| CN101321415A (en) * | 2008-07-14 | 2008-12-10 | 王晨 | Rare earth thick film circuit electrical heating element based on aluminum nitride minicrystal ceramic substrates and its preparation technique |
| CN103755351A (en) * | 2013-12-30 | 2014-04-30 | 莱鼎电子材料科技有限公司 | Method for producing LED (light-emitting diode) by low-cost aluminum nitride ceramic substrate |
| CN104961468A (en) * | 2015-07-08 | 2015-10-07 | 长沙鼎成新材料科技有限公司 | TiAlN ceramic substrate for LED (light emitting diode) |
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2015
- 2015-10-27 CN CN201510706703.0A patent/CN105367068A/en active Pending
Patent Citations (4)
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| JPH01317171A (en) * | 1988-06-16 | 1989-12-21 | Toyo Alum Kk | Production of granular aluminum nitride powder |
| CN101321415A (en) * | 2008-07-14 | 2008-12-10 | 王晨 | Rare earth thick film circuit electrical heating element based on aluminum nitride minicrystal ceramic substrates and its preparation technique |
| CN103755351A (en) * | 2013-12-30 | 2014-04-30 | 莱鼎电子材料科技有限公司 | Method for producing LED (light-emitting diode) by low-cost aluminum nitride ceramic substrate |
| CN104961468A (en) * | 2015-07-08 | 2015-10-07 | 长沙鼎成新材料科技有限公司 | TiAlN ceramic substrate for LED (light emitting diode) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| RU2714151C1 (en) * | 2019-06-18 | 2020-02-12 | Акционерное общество "Научно-исследовательский институт природных, синтетических алмазов и инструмента" - АО "ВНИИАЛМАЗ" | Method of applying graphene coating on metal powders |
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Application publication date: 20160302 |