CN105384443A - Compact high-stability aluminum nitride-silicon carbide composite baseplate material for circuit board and preparation method of compact high-stability aluminum nitride-silicon carbide composite baseplate material - Google Patents
Compact high-stability aluminum nitride-silicon carbide composite baseplate material for circuit board and preparation method of compact high-stability aluminum nitride-silicon carbide composite baseplate material Download PDFInfo
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Abstract
The invention discloses a compact high-stability aluminum nitride-silicon carbide composite baseplate material for a circuit board. The material is prepared by mixing aluminum nitride powder and silicon carbide powder, and has the properties of high thermal conduction and environment protection; compared with a conventional organic solvent, a composite solvent prepared from ionic liquid of quaternary ammonium salt, dehydrated alcohol and the like is lower in surface tension, better in reaction activity, and better in wettability to the powder, different materials can be uniformly mixed to form a high-efficient network structure, and obtained composite alcohol group tape casting slurry is good in fluidity, easy to shape and few in bubbles; degumming stability and sintering stability of blanks are good, and added triphane can enable the heat stability of a composite material to be improved; cracks generated when the composite material is affected by hot and cold temperature are avoided, and a sintering aid and other raw materials are combined, so that obtained baseplate sheets are high in production efficiency, good in thermal conductivity, high in utilization rate of the raw materials, and high-efficient in product economy, and can be widely used for baseplates of varied circuit boards.
Description
Technical field
The present invention relates to circuit card ceramic substrate material technical field, AlN-SiC composite circuit board baseplate material particularly relating to a kind of fine and close high stability and preparation method thereof.
Background technology
Along with the increase of electronic devices and components power and density, cause unit volume thermal value also to increase thereupon, require more and more higher to the over-all properties of circuit substrate, wherein ceramic substrate possesses good over-all properties, in insulativity, thermal conductivity and thermal expansivity, have outstanding performance in the aspects such as chemical stability, be widely used in gradually in baseplate material, wherein continue to use more of a specified duration mainly with aluminum oxide, beryllium oxide is as raw substrate, but this bi-material to there is thermal conductivity low, the defect such as poisonous, application is restricted, otherwise with aluminium nitride, silicon carbide then has comparatively significantly advantage as baseplate material in use properties.
Although having a extensive future of aluminium nitride, silicon carbide ceramics substrate, but exist in actual production process cost of material costly, high temperature sintering density is low, production process is loaded down with trivial details, raw material availability is low, actual thermal conductivity problem not fully up to expectations etc., govern the extensive use of this kind of material, be badly in need of doing further improvement from preparation of raw material and production technique.
Summary of the invention
The object of the invention is exactly the defect in order to make up prior art, AlN-SiC composite circuit board baseplate material providing a kind of fine and close high stability and preparation method thereof.
The present invention is achieved by the following technical solutions:
An AlN-SiC composite circuit board baseplate material for fine and close high stability, this material is made up of the raw material of following weight part: aluminium nitride 60-70, silicon carbide 15-20, triphane micro mist 8-10, Sodium Silicofluoride 0.5-0.8, ion liquid of quaternaries 10-15, dehydrated alcohol are appropriate, silane coupling agent kh5501-2, hexylene glycol 4-5, polyoxyethylene glycol 1-2, sintering aid 6-8.
Described sintering aid is made up of the raw material of following weight part: high purity boron powder 2-3, cryolite powder 4-5, nano aluminum nitride 10-15, solid content are alumina sol 10-15, the acetic acid 0.01-0.02 of 25-30%, the preparation method of sintering aid is: all dropped in ball grinder by all raw materials, airtight rolling ball milling 10-12h, after ball milling terminates, mixed slurry is taken out, put into vacuum drying oven dry, drying temperature is 80-100 DEG C, be cooled to room temperature after complete drying, gained powder Ball milling becomes powder and get final product.
The preparation method of the AlN-SiC composite circuit board baseplate material of described a kind of fine and close high stability is:
(1) first by Ball milling 20-25h after aluminium nitride, silicon carbide, triphane micro mist, quaternary ammonium salt ionic liquid, silane coupling agent kh550, sintering aid mixing, add other remaining component subsequently, continue Ball milling 10-12h, the viscosity controller of gained slurry is at 15000-20000cps, finally that gained slurry is for subsequent use after froth in vacuum process;
(2) by the slurry of above-mentioned preparation through tape casting machine, curtain coating obtains the base substrate of desired thickness, base substrate is sent in vacuum resistance furnace after thermal treatment 2-3h by gained base substrate under 500-600 DEG C of condition, and with the temperature of 1650-1750 DEG C sintering 3-4h under nitrogen and hydrogen gas mixture atmosphere, obtain described composite substrate material, wherein the throughput ratio of nitrogen and hydrogen is 1:0.5-1.
The present invention by aluminium nitride and silicon carbide powder used in combination, comprehensively both advantage, possess high heat conduction and the feature of environmental protection, and with quaternary ammonium salt ionic liquid, the double solvents of the preparation such as dehydrated alcohol is lower than traditional surface of organic solvent tension force, reactive behavior is higher, good to the wetting property of powder, different materials can be made to be uniformly mixed to form efficient reticulated structure, the composite alcohol-base casting slurry good fluidity obtained, be easy to shaping, bubble is few, base substrate comes unstuck better with sintering stability, the triphane added effectively can improve the thermostability of matrix material, prevent from being heated and meet cold cracking, again in conjunction with sintering aid and other raw material, the substrate foil production efficiency prepared is high, thermal conductivity is good, raw material availability is high, product economy is efficient, multiple circuit board substrate can be used as widely.
Embodiment
This embodiment material is made up of the raw material of following weight part: aluminium nitride 60, silicon carbide 15, triphane micro mist 8, Sodium Silicofluoride 0.5, ion liquid of quaternaries 10, dehydrated alcohol are appropriate, silane coupling agent kh5501, hexylene glycol 4, polyoxyethylene glycol 1, sintering aid 6.
Wherein sintering aid is made up of the raw material of following weight part: high purity boron powder 2, cryolite powder 4, nano aluminum nitride 10, solid content are alumina sol 10, the acetic acid 0.01 of 25%, the preparation method of sintering aid is: all dropped in ball grinder by all raw materials, airtight rolling ball milling 10h, after ball milling terminates, mixed slurry is taken out, put into vacuum drying oven dry, drying temperature is 80 DEG C, is cooled to room temperature after complete drying, and gained powder Ball milling becomes powder and get final product.
The preparation method of this embodiment material is:
(1) first by Ball milling 20h after aluminium nitride, silicon carbide, triphane micro mist, quaternary ammonium salt ionic liquid, silane coupling agent kh550, sintering aid mixing, add other remaining component subsequently, continue Ball milling 10h, the viscosity controller of gained slurry is at 15000cps, finally that gained slurry is for subsequent use after froth in vacuum process;
(2) by the slurry of above-mentioned preparation through tape casting machine, curtain coating obtains the base substrate that thickness is 3mm, base substrate is sent in vacuum resistance furnace after thermal treatment 2h by gained base substrate under 500 DEG C of conditions, and with the temperature of 1680 DEG C sintering 3h under nitrogen and hydrogen gas mixture atmosphere, obtain described composite substrate material, wherein the throughput ratio of nitrogen and hydrogen is 1:0.5.
The performance test structure of the substrate that this embodiment obtains is:
Volume density: 3.68g/cm
3; Flexural strength: 562.4MPa; Thermal conductivity: 171.8(W/m.k).
Claims (3)
1. the AlN-SiC composite circuit board baseplate material of a fine and close high stability, it is characterized in that, this material is made up of the raw material of following weight part: aluminium nitride 60-70, silicon carbide 15-20, triphane micro mist 8-10, Sodium Silicofluoride 0.5-0.8, ion liquid of quaternaries 10-15, dehydrated alcohol are appropriate, silane coupling agent kh5501-2, hexylene glycol 4-5, polyoxyethylene glycol 1-2, sintering aid 6-8.
2. the AlN-SiC composite circuit board baseplate material of a kind of fine and close high stability as claimed in claim 1, it is characterized in that, described sintering aid is made up of the raw material of following weight part: high purity boron powder 2-3, cryolite powder 4-5, nano aluminum nitride 10-15, solid content is the alumina sol 10-15 of 25-30%, acetic acid 0.01-0.02, the preparation method of sintering aid is: all dropped in ball grinder by all raw materials, airtight rolling ball milling 10-12h, after ball milling terminates, mixed slurry is taken out, put into vacuum drying oven dry, drying temperature is 80-100 DEG C, room temperature is cooled to after complete drying, gained powder Ball milling becomes powder and get final product.
3. the AlN-SiC composite circuit board baseplate material and preparation method thereof of a kind of fine and close high stability as claimed in claim 1, it is characterized in that, described preparation method is:
(1) first by Ball milling 20-25h after aluminium nitride, silicon carbide, triphane micro mist, quaternary ammonium salt ionic liquid, silane coupling agent kh550, sintering aid mixing, add other remaining component subsequently, continue Ball milling 10-12h, the viscosity controller of gained slurry is at 15000-20000cps, finally that gained slurry is for subsequent use after froth in vacuum process;
(2) by the slurry of above-mentioned preparation through tape casting machine, curtain coating obtains the base substrate of desired thickness, base substrate is sent in vacuum resistance furnace after thermal treatment 2-3h by gained base substrate under 500-600 DEG C of condition, and with the temperature of 1650-1750 DEG C sintering 3-4h under nitrogen and hydrogen gas mixture atmosphere, obtain described composite substrate material, wherein the throughput ratio of nitrogen and hydrogen is 1:0.5-1.
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Cited By (2)
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| CN105801127A (en) * | 2016-03-03 | 2016-07-27 | 上海大学 | Method for preparing high-thermal-conductivity aluminum nitride ceramic substrate for integrated circuit package |
| CN115572577A (en) * | 2022-01-27 | 2023-01-06 | 淄博理研泰山涂附磨具有限公司 | High-fluidity grinding material and preparation method thereof |
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| CN115572577A (en) * | 2022-01-27 | 2023-01-06 | 淄博理研泰山涂附磨具有限公司 | High-fluidity grinding material and preparation method thereof |
| CN115572577B (en) * | 2022-01-27 | 2024-02-27 | 淄博三共泰山涂附磨具有限公司 | High-fluidity abrasive and preparation method thereof |
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Application publication date: 20160309 |